CN106961273A - Charge pump circuit based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current - Google Patents
Charge pump circuit based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current Download PDFInfo
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- CN106961273A CN106961273A CN201710235977.5A CN201710235977A CN106961273A CN 106961273 A CN106961273 A CN 106961273A CN 201710235977 A CN201710235977 A CN 201710235977A CN 106961273 A CN106961273 A CN 106961273A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
- H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
- H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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Abstract
The invention discloses the charge pump circuit based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current; it is related to technical field of circuit design, including the heavy control module of proof and electric leakage-proof safety module, electric current, switch module, electric current sink and current source module, loop filtering module and buffer module.Charge pump does not need circuital current heavy and current source accurately mate, need to only meet the electric current that the heavy electric current of electric current is more than or equal to current source.The condition of work of circuit is easier to meet, and compound semiconductor charge pump is easier to realize.Simultaneously proof and electric leakage-proof safety module realized using two diodes, the module it is simple in construction, will not additionally take excessive chip area, more be advantageously integrated.Electrical leakage problems when proof and electric leakage-proof safety technology can solve stable state using the unilateral conduction of diode caused by current source and electric current sink mismatch, so that output control voltage immobilizes charge pump circuit under steady state conditions.
Description
Technical field
The present invention relates to technical field of circuit design, more particularly to based on stable state proof and electric leakage-proof safety and the heavy control skill of electric current
The charge pump circuit of art.
Background technology
With continuing to develop for the fields such as personal radio communication, radar, Terahertz Technology and space communication, to transceiver
System proposes higher requirement, includes higher frequency, broader bandwidth, higher integrated level and bigger power etc..
And frequency conversion source, as the important component of transceiver, its performance can directly determine the performance of transceiver.For at present, with Si
CMOS with SiGe BiCMOS techniques are compared, the frequency characteristic and power characteristic of compound semiconductor process be more preferably more suitable for by with
To design high performance frequency conversion source.
Common Direct Digital Frequency Synthesizers, charge pump phase lock loop frequency synthesizer, and mixed type frequency synthesizer
It could act as frequency conversion source.Direct Digital Frequency Synthesizers advantage is that frequency accuracy is high, bound-time is short, but a disadvantage is that output frequency
Rate is relatively low, suppresses spuious ability；In general mixed type frequency synthesizer is all by two phase-locked loop or by Direct Digital
Frequency synthesizer adds the mode of analog phase-locked look to realize, advantage is that output frequency is relatively high, suppresses spuious ability by force, shortcoming is exactly
Power consumption is big, and integrated level is not high；Charge pump phase lock loop frequency synthesizer feature is that output frequency is high, and bound-time is short, suppresses spuious
Ability is strong, and integrated level is high, the features such as small power consumption.So the synthesis proposed in order to be able to meet every field to transceiver system will
Ask, realize that charge pump phase lock loop has very important significance using compound semiconductor.
But it is due to that some defects of compound semiconductor technology in itself are constrained using technical research charge pump lock phase
The development of ring, is primarily due to charge pump circuit and is difficult to.Because charge pump is charge pump phase lock loop frequency synthesizer
Core circuit, the circuit must be heavy comprising current source and electric current, and current source is general is realized by P-type transistor and electric current
It is heavy to be realized by N-type transistor, it is desirable to current source and the heavy matching of electric current, the control voltage that such charge pump is exported when stable state
It is changeless, whole phase-locked loop can be locked.Due to conventional Si CMOS and SiGe BiCMOS have simultaneously N-type and
P-type transistor, this is realizing current source and the heavy match party face of electric current with very big advantage.For compound semiconductor,
The technique only has N-type transistor without p-type (complementary type) transistor, and this, which has resulted in current source and sunk with electric current, is difficult to match,
So as to cause charge pump to be difficult to, so the development of compound semiconductor charge pump phase lock loop just receives serious limitation.
At present, all it is to solve current source by the way of control electric current sinks electric current for compound semiconductor charge pump
The mismatch problems sunk with electric current, but this mode is but difficult to allow the heavy size of current accurately mate with current source of electric current,
The control voltage for allowing charge pump to export can not be truly realized in stable state stabilized.
The content of the invention
, can be with the embodiments of the invention provide sinking the charge pump circuit of control technology based on stable state proof and electric leakage-proof safety and electric current
Solve problems of the prior art.
A kind of charge pump circuit based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current, including proof and electric leakage-proof safety mould
Block, electric current sink that control module, switch module, electric current be heavy and current source module, loop filtering module and buffer module, anticreep
Protection module is made up of two diodes D1 and D2, for preventing charge pump under steady state conditions because current source and electric current are heavy not
Electric capacity C caused by matchingNAnd CPMiddle charge leakage phenomenon；The heavy control module of electric current is made up of F1 and F2 two parts, and F1 is by two
Transistor P1 and P3, a source resistance and four diodes are constituted, for the heavy I of control electric currentDN1Size of current, in electric charge
I can be kept during pump workDN1≥IUP1, F2 is by two transistors P2 and P4, a source resistance and four diode structures
Into for the heavy I of control electric currentDN2Size of current, I can be kept during charge pumpDN2≥IUP2；Switch module by
Four transistors UPN, UPP, DNP and DNN are constituted, and grid is the input of charge pump circuit, for receiving previous stage frequency discrimination
Four tunnel output signals of phase detector circuit；Electric current is heavy and current source module is by two current source IUP1And IUP2It is heavy with two electric currents
IDN1And IDN2Constitute, for the capacitor charge and discharge to loop filtering module；Loop filtering module is by the resistance and electric capacity C connectedN
And CPConstitute, module one end ground connection, the input of another termination buffer module influences charge pump by the discharge and recharge of electric capacity
The change of the control voltage of output；Buffer module is respectively by two transistor P5 and P7 and P6 and P8 and two diode structure
Into the voltage signal for being exported to loop filtering module carries out level translation and eliminates shadow of the late-class circuit to charge pump
Ring, the input of buffer module is connected with the output end of loop filtering module, and output end is the output end of whole charge pump, difference
Output control voltage signal VCNAnd VCPIt is conveyed to the voltage-controlled oscillator circuit of rear stage；
Diode D1 positive pole and current source I in proof and electric leakage-proof safety moduleUP1Grid and source resistance connection, negative pole
It is connected with the drain electrode for switching DNP, diode D2 positive pole and current source IUP2Grid and source resistance connection, negative pole is with opening
Close UPP drain electrode connection；Input difference the connecting valve UPP and DNP of F1 and F2 in the heavy control module of electric current drain electrode, it is defeated
Go out the end heavy I of connection electric current respectivelyDN1And IDN2Grid, transistor P1 grid is F1 input in F1, with diode D2's
Negative pole and the drain electrode connection for switching UPP, transistor P1 drain electrode connection power vd D, transistor P1 source electrode connect first
The positive pole of diode, the negative pole of first diode connects the positive pole of second diode, the negative pole connection of second diode
The positive pole of 3rd diode, the negative pole of the 3rd diode connects the positive pole of the 4th diode, the 4th diode it is negative
Pole is connected with transistor P3 drain electrode, transistor P3 drain electrode and grid short circuit, grid and the heavy I of electric currentDN1Grid connection；F2
Middle transistor P2 grid is F2 input, and the drain electrode with diode D1 negative pole and switch DNP is connected, transistor P2's
Drain electrode connection power vd D, transistor P2 source electrode connects the positive pole of first diode, the negative pole connection of first diode the
The positive pole of two diodes, the negative pole of second diode connects the positive pole of the 3rd diode, the negative pole of the 3rd diode
Connect the positive pole of the 4th diode, the negative pole transistor P4 of the 4th diode drain electrode connection, transistor P4 drain electrode with
Grid short circuit, grid and the heavy I of electric currentDN2Grid connection；
UPN and UPP and the heavy I of electric current are switched in switch moduleDN1Drain electrode be connected, switch DNP and DNN source electrode and electric current
Heavy IDN2Drain electrode be connected；Electric current sinks and current source I in current source moduleUP1And IUP2Drain electrode be connected with power vd D, IUP1Grid
Pole and source electrode and IUP1The two ends of source resistance be connected, IUP2Grid and source electrode and IUP2Source resistance two ends be connected
Connect, electric current sinks IDN1And IDN2Source electrode be connected respectively with respective source resistance one end, the source resistance other end with power supply VTT
It is connected；Power vd D size is high potential, and power supply VTT size is low potential；
The resistance and electric capacity C connected in loop filtering moduleNIn, resistance one end is connected with transistor P1 grid, electric capacity CN
One end is grounded；The resistance and electric capacity C of series connectionPIn, resistance one end is connected with transistor P2 grid, electric capacity CPOne end is grounded；
Transistor P5 source electrode meets power vd D in buffer module, and grid connects transistor P1 grid, and drain electrode connects first two
The positive pole of pole pipe, the negative pole of first diode connects the positive pole of second diode, and the negative pole of second diode connects transistor
P7 source electrode, while the negative pole output voltage V of second diodeCN, transistor P7 drain electrode and source shorted, and connect power supply
VTT；Transistor P6 source electrode meets power vd D, and grid connects transistor P2 grid, and drain electrode connects the positive pole of first diode, the
The negative pole of one diode connects the positive pole of second diode, and the negative pole of second diode connects transistor P8 source electrode, simultaneously
The negative pole output voltage V of second diodeCP, transistor P8 drain electrode and source shorted, and connect power supply VTT.
Preferably, the circuit uses compound semiconductor process, including GaAs MESFET, GaAs PHEMT and InP
PHEMT techniques.
Preferably, current source IUP1And IUP2, switch UPN, UPP, DNP and DNN, transistor P1, P2, P5, P6, P7 and P8 are equal
For depletion mode transistor；Electric current sinks IDN1And IDN2, transistor P3 and P4 are enhancement transistor.
Compared with prior art, the present invention has advantages below：
First, from compound semiconductor process, instant invention overcomes led in technology due to lacking complementary transistor
Cause the problem of charge pump is difficult to.Charge pump proposed by the present invention does not need circuital current heavy (complete with current source accurately mate
It is complete equal), it need to only meet the electric current that the heavy electric current of electric current is more than or equal to current source.The condition of work of circuit is easier to meet,
Compound semiconductor charge pump is easier to realize.
Second, proof and electric leakage-proof safety module is realized using two diodes, the module it is simple in construction, will not additionally take
Excessive chip area, is more advantageously integrated.Proof and electric leakage-proof safety technology can solve stable state using the unilateral conduction of diode
When current source and electric current are heavy mismatch caused by electrical leakage problems so that charge pump circuit exports control under steady state conditions
Voltage processed immobilizes.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the charge pump circuit provided in an embodiment of the present invention based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current
Structure chart.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The electric charge based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current provided in reference picture 1, the embodiment of the present invention
Pump circuit, including the heavy control module of proof and electric leakage-proof safety module, electric current, switch module, electric current sink and current source module, loop filtering
Module and buffer module.Charge pump circuit generally difference form, technique is compound semiconductor process；Proof and electric leakage-proof safety mould
Block is made up of two diodes D1 and D2, for preventing charge pump under steady state conditions by current source and the heavy mismatch institute of electric current
The electric capacity C causedNAnd CPMiddle charge leakage phenomenon；The heavy control module of electric current is made up of F1 and F2 two parts, and F1 is by two transistors
P1 and P3, a source resistance and four diodes are constituted, for the heavy I of control electric currentDN1Size of current, in charge pump
During can keep IDN1≥IUP1, F2 is made up of two transistors P2 and P4, a source resistance and four diodes, is used for
Control electric current sinks IDN2Size of current, I can be kept during charge pumpDN2≥IUP2；Switch module is by four crystal
Pipe UPN, UPP, DNP and DNN are constituted, and grid is the input of charge pump circuit, for receiving previous stage phase frequency detector electricity
The four tunnel output signals on road；Electric current is heavy and current source module is by two current source IUP1And IUP2With the heavy I of two electric currentsDN1And IDN2Structure
Into for the capacitor charge and discharge to loop filtering module；Loop filtering module is by the resistance and electric capacity C connectedNAnd CPConstitute, should
Module one end is grounded, the input of another termination buffer module, the control for influenceing charge pump to export by the discharge and recharge of electric capacity
The change of voltage；Buffer module is made up of two transistor P5 and P7 and P6 and P8 and two diode respectively, for ring
The voltage signal of road filtration module output carries out level translation and eliminates influence of the late-class circuit to charge pump, buffer module
Input is connected with the output end of loop filtering module, and output end is the output end of whole charge pump, difference output control voltage
Signal VCNAnd VCPIt is conveyed to the voltage-controlled oscillator circuit of rear stage.
Diode D1 positive pole and current source I in proof and electric leakage-proof safety moduleUP1Grid and source resistance connection, negative pole
It is connected with the drain electrode for switching DNP, diode D2 positive pole and current source IUP2Grid and source resistance connection, negative pole is with opening
Close UPP drain electrode connection；Input difference the connecting valve UPP and DNP of F1 and F2 in the heavy control module of electric current drain electrode, it is defeated
Go out the end heavy I of connection electric current respectivelyDN1And IDN2Grid, transistor P1 grid is F1 input in F1, with diode D2's
Negative pole and the drain electrode connection for switching UPP, transistor P1 drain electrode connection power vd D, transistor P1 source electrode connect first
The positive pole of diode, the negative pole of first diode connects the positive pole of second diode, the negative pole connection of second diode
The positive pole of 3rd diode, the negative pole of the 3rd diode connects the positive pole of the 4th diode, the 4th diode it is negative
Pole is connected with transistor P3 drain electrode, transistor P3 drain electrode and grid short circuit, grid and the heavy I of electric currentDN1Grid connection；F2
Middle transistor P2 grid is F2 input, and the drain electrode with diode D1 negative pole and switch DNP is connected, transistor P2's
Drain electrode connection power vd D, transistor P2 source electrode connects the positive pole of first diode, the negative pole connection of first diode the
The positive pole of two diodes, the negative pole of second diode connects the positive pole of the 3rd diode, the negative pole of the 3rd diode
Connect the positive pole of the 4th diode, the negative pole transistor P4 of the 4th diode drain electrode connection, transistor P4 drain electrode with
Grid short circuit, grid and the heavy I of electric currentDN2Grid connection.
UPN and UPP and the heavy I of electric current are switched in switch moduleDN1Drain electrode be connected, switch DNP and DNN source electrode and electric current
Heavy IDN2Drain electrode be connected；Electric current sinks and current source I in current source moduleUP1And IUP2Drain electrode be connected with power vd D, IUP1Grid
Pole and source electrode and IUP1The two ends of source resistance be connected, IUP2Grid and source electrode and IUP2Source resistance two ends be connected
Connect, electric current sinks IDN1And IDN2Source electrode be connected respectively with respective source resistance one end, the source resistance other end with power supply VTT
It is connected；Power vd D size is high potential, and power supply VTT size is low potential.
The resistance and electric capacity C connected in loop filtering moduleNIn, resistance one end is connected with transistor P1 grid, electric capacity CN
One end is grounded；The resistance and electric capacity C of series connectionPIn, resistance one end is connected with transistor P2 grid, electric capacity CPOne end is grounded.
Transistor P5 source electrode meets power vd D in buffer module, and grid connects transistor P1 grid, and drain electrode connects first two
The positive pole of pole pipe, the negative pole of first diode connects the positive pole of second diode, and the negative pole of second diode connects transistor
P7 source electrode, while the negative pole output voltage V of second diodeCN, transistor P7 drain electrode and source shorted, and connect power supply
VTT；Transistor P6 source electrode meets power vd D, and grid connects transistor P2 grid, and drain electrode connects the positive pole of first diode, the
The negative pole of one diode connects the positive pole of second diode, and the negative pole of second diode connects transistor P8 source electrode, simultaneously
The negative pole output voltage V of second diodeCP, transistor P8 drain electrode and source shorted, and connect power supply VTT.
Adoptable compound semiconductor process has GaAs MESFET, GaAs PHEMT and InP PHEMT techniques；Electric current
Source IUP1And IUP2, switch UPN, UPP, DNP and DNN, transistor P1, P2, P5, P6, P7 and P8 are depletion mode transistor；Electric current
Heavy IDN1And IDN2, transistor P3 and P4 are enhancement transistor.
The operation principle of the present invention is as follows.
New number of four tunnels of the previous stage phase frequency detector output of charge pump can be input to four of charge pump switch UPN,
UPP, DNP and DNN, circuit, which has altogether, occurs three kinds of working conditions, and two of which is unstable state, and one kind is stable state.Here " 0 " is used
" 1 " represents low level and high level respectively, when switch connects low level, and on off state is disconnection；When switch connects high level,
Switch closure.The original state of circuit will meet IDN1≥IUP1, IDN2≥IUP2。VCPAnd VCNIt is the output of charge pump two-way respectively
Control voltage signal, V can be usedCP–VCNMode be linked into the voltage controlled oscillator of rear stage.
Unstable state situation, works as UPN=0, UPP=1, DNP=0, (when the reference frequency of charge pump phase lock loop surpasses during DNN=1
It is preceding in frequency divider export comparison frequency when), IUP2Flow into IDN1And IDN2In, due to IDN1And IDN2It is all higher than IUP2, so IUP2No
Can be to CNCharging, IDN1Can be by CNIn charge extraction come out, make VC1Voltage is reduced.Due to the long mudulation effect V of ditchC1Reduce meeting
Make IUP2Electric current increase, simultaneously because F1 effect can also make VF1Reduce so that IDN1Electric current reduce.Due to VC1And VCNPoint
It is not the input/output signal of buffer module, VCN also can be with VC1And reduce.Due to UPN=0, DNP=0, IUP1Only arrive CP
A path, IUP1Can be to CPCharging, makes VC2Voltage is raised.Similarly, VC2Rise can cause IUP1Electric current reduce and IDN2
Electric current become big, VCPAlso can be with VC2And raise.Control voltage (V nowCP–VCN) will increase, the VCO of rear stage
Device circuit output frequency will be improved.
Unstable state situation, works as UPN=1, UPP=0, DNP=1, (when the reference frequency of charge pump phase lock loop is stagnant during DNN=0
When the comparison frequency that frequency divider is exported), IUP1Flow into IDN1And IDN2In, due to IDN1And IDN2It is all higher than IUP1, so IUP1No
Can be to CPCharging, IDN2Can be by CPIn charge extraction come out, make VC2Voltage is reduced.Due to the long mudulation effect V of ditchC2Reduce meeting
Make IUP1Electric current increase, simultaneously because F2 effect can also make VF2Reduce so that IDN2Electric current reduce.Due to VC2And VCPPoint
It is not the input/output signal of buffer module, VCPAlso can be with VC2And reduce.Due to UPP=0, DNN=0, only one IUP2
To CNPath, IUP2Can be to CNCharging, makes VC1Voltage is raised.Similarly, VC1Rise can cause IUP2Electric current reduce and IDN1
Electric current become big, VCNAlso can be with VC1And raise.Control voltage (V nowCP–VCN) will reduce, the VCO of rear stage
Device circuit output frequency will be reduced.
Stable situation, works as UPN=1, UPP=0, DNP=0, (when the reference frequency of charge pump phase lock loop is with dividing during DNN=1
When the comparison frequency of frequency device output is equal), IUP1Electric current flows into IDN1, IUP2Electric current flows into IND2.Due to IDN1≥IUP1, IDN2≥
IUP2, so IUP1And IUP2Extra electric current is not had flows into CPAnd CN；There is unilateal conduction in proof and electric leakage-proof safety module in addition
Property diode ensure that when the electric current during electric current is heavy is more than the electric current in current source the electric charge in electric capacity will not be drawn into
During electric current is heavy, then VC1And VC2Voltage can keep constant.Now control voltage (VCP–VCN) be it is fixed, rear stage it is voltage-controlled
Pierce circuit output frequency will not be changed, and whole phase-locked loop is in the lock state.
, but those skilled in the art once know basic creation although preferred embodiments of the present invention have been described
Property concept, then can make other change and modification to these embodiments.So, appended claims are intended to be construed to include excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and modification of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (3)
1. a kind of charge pump circuit based on stable state proof and electric leakage-proof safety and the heavy control technology of electric current, it is characterised in that including leakproof
Electric protection module, electric current sink control module, switch module, electric current heavy and current source module, loop filtering module and buffering mould
Block, proof and electric leakage-proof safety module is made up of two diodes D1 and D2, for preventing charge pump under steady state conditions due to current source
With the electric capacity C caused by the heavy mismatch of electric currentNAnd CPMiddle charge leakage phenomenon；Electric current sinks control module by F1 and F2 two parts structures
Into F1 is made up of two transistors P1 and P3, a source resistance and four diodes, for the heavy I of control electric currentDN1Electric current
Size, can keep I during charge pumpDN1≥IUP1, F2 is by two transistors P2 and P4, a source resistance and four
Individual diode is constituted, for the heavy I of control electric currentDN2Size of current, I can be kept during charge pumpDN2≥IUP2；
Switch module is made up of four transistors UPN, UPP, DNP and DNN, and grid is the input of charge pump circuit, for receiving
Four tunnel output signals of previous stage phase frequency detector circuit；Electric current is heavy and current source module is by two current source IUP1And IUP2With two
Individual electric current sinks IDN1And IDN2Constitute, for the capacitor charge and discharge to loop filtering module；Loop filtering module is by the resistance connected
With electric capacity CNAnd CPConstitute, module one end ground connection, the input of another termination buffer module, by the discharge and recharge of electric capacity come shadow
Ring the change of the control voltage of charge pump output；Buffer module is respectively by two transistor P5 and P7 and P6 and P8 and two two
Pole pipe is constituted, and the voltage signal for being exported to loop filtering module carries out level translation and eliminates late-class circuit to charge pump
Influence, the input of buffer module is connected with the output end of loop filtering module, and output end is the output end of whole charge pump,
Difference output control voltage signal VCNAnd VCPIt is conveyed to the voltage-controlled oscillator circuit of rear stage；
Diode D1 positive pole and current source I in proof and electric leakage-proof safety moduleUP1Grid and source resistance connection, negative pole is with opening
Close DNP drain electrode connection, diode D2 positive pole and current source IUP2Grid and source resistance connection, negative pole with switch UPP
Drain electrode connection；Input difference the connecting valve UPP and DNP of F1 and F2 in the heavy control module of electric current drain electrode, output end
The heavy I of electric current is connected respectivelyDN1And IDN2Grid, transistor P1 grid is F1 input, the negative pole with diode D2 in F1
And switch UPP drain electrode connection, transistor P1 drain electrode connection power vd D, transistor P1 first two pole of source electrode connection
The positive pole of pipe, the negative pole of first diode connects the positive pole of second diode, the negative pole connection the 3rd of second diode
The positive pole of individual diode, the negative pole of the 3rd diode connects the positive pole of the 4th diode, the negative pole of the 4th diode with
Transistor P3 drain electrode connection, transistor P3 drain electrode and grid short circuit, grid and the heavy I of electric currentDN1Grid connection；It is brilliant in F2
Body pipe P2 grid is F2 input, and the drain electrode with diode D1 negative pole and switch DNP is connected, transistor P2 drain electrode
Power vd D is connected, transistor P2 source electrode connects the positive pole of first diode, and the negative pole of first diode connects second
The positive pole of diode, the negative pole of second diode connects the positive pole of the 3rd diode, the negative pole connection of the 3rd diode
The positive pole of 4th diode, the negative pole transistor P4 of the 4th diode drain electrode connection, transistor P4 drain electrode and grid
Short circuit, grid and the heavy I of electric currentDN2Grid connection；
UPN and UPP and the heavy I of electric current are switched in switch moduleDN1Drain electrode be connected, source electrode and the electric current for switching DNP and DNN sink IDN2
Drain electrode be connected；Electric current sinks and current source I in current source moduleUP1And IUP2Drain electrode be connected with power vd D, IUP1Grid and
Source electrode and IUP1The two ends of source resistance be connected, IUP2Grid and source electrode and IUP2The two ends of source resistance be connected, electricity
The heavy I of streamDN1And IDN2Source electrode be connected respectively with respective source resistance one end, the source resistance other end is connected with power supply VTT
Connect；Power vd D size is high potential, and power supply VTT size is low potential；
The resistance and electric capacity C connected in loop filtering moduleNIn, resistance one end is connected with transistor P1 grid, electric capacity CNOne end
Ground connection；The resistance and electric capacity C of series connectionPIn, resistance one end is connected with transistor P2 grid, electric capacity CPOne end is grounded；
Transistor P5 source electrode meets power vd D in buffer module, and grid connects transistor P1 grid, and drain electrode connects first diode
Positive pole, the negative pole of first diode connects the positive pole of second diode, and the negative pole of second diode connects transistor P7's
Source electrode, while the negative pole output voltage V of second diodeCN, transistor P7 drain electrode and source shorted, and connect power supply VTT；
Transistor P6 source electrode meets power vd D, and grid connects transistor P2 grid, and drain electrode connects the positive pole of first diode, first
The negative pole of diode connects the positive pole of second diode, and the negative pole of second diode connects transistor P8 source electrode, while second
The negative pole output voltage V of individual diodeCP, transistor P8 drain electrode and source shorted, and connect power supply VTT.
2. circuit as claimed in claim 1, it is characterised in that the circuit uses compound semiconductor process, including GaAs
MESFET, GaAs PHEMT and InP PHEMT techniques.
3. circuit as claimed in claim 1, it is characterised in that current source IUP1And IUP2, switch UPN, UPP, DNP and DNN, it is brilliant
Body pipe P1, P2, P5, P6, P7 and P8 are depletion mode transistor；Electric current sinks IDN1And IDN2, transistor P3 and P4 are enhanced
Transistor.
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| CN201710235977.5A CN106961273B (en) | 2017-04-12 | 2017-04-12 | Charge pump circuit based on stable anti-creeping protection and current sink control technology |
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| CN106961273B CN106961273B (en) | 2020-05-26 |
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| CN111064358A (en) * | 2019-11-25 | 2020-04-24 | 北京时代民芯科技有限公司 | Charge pump circuit with self-calibration function and programmable current |
| CN112799460A (en) * | 2021-01-30 | 2021-05-14 | 珠海巨晟科技股份有限公司 | Comparison circuit with mismatch calibration function |
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| US20050237092A1 (en) * | 2004-04-27 | 2005-10-27 | Hiroshi Kawago | Charge pump circuit reducing noise and charge error and PLL circuit using the same |
| CN1747297A (en) * | 2004-08-27 | 2006-03-15 | 百利通电子(上海)有限公司 | Calibration of up and down charge-pump currents using a sample-and-hold circuit during idle times |
| CN1770632A (en) * | 2004-11-04 | 2006-05-10 | 国际商业机器公司 | Novel circuit for minimizing filter capacitance leakage induced jitter in phase locked loops (PLLs) |
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| CN111064358A (en) * | 2019-11-25 | 2020-04-24 | 北京时代民芯科技有限公司 | Charge pump circuit with self-calibration function and programmable current |
| CN112799460A (en) * | 2021-01-30 | 2021-05-14 | 珠海巨晟科技股份有限公司 | Comparison circuit with mismatch calibration function |
| CN112799460B (en) * | 2021-01-30 | 2022-03-29 | 珠海巨晟科技股份有限公司 | Comparison circuit with mismatch calibration function |
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| CN106961273B (en) | 2020-05-26 |
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