CN106960886A - 基于硫化钼和铜镓铟的光电传感器 - Google Patents

基于硫化钼和铜镓铟的光电传感器 Download PDF

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CN106960886A
CN106960886A CN201710283468.XA CN201710283468A CN106960886A CN 106960886 A CN106960886 A CN 106960886A CN 201710283468 A CN201710283468 A CN 201710283468A CN 106960886 A CN106960886 A CN 106960886A
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黄晓敏
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Abstract

本发明提供了一种新结构的光电传感器，包括透明导电氧化物栅线，在所述透明导电氧化物层和透明导电氧化物栅线上形成硫化钼层，所述硫化钼层对应透明导电氧化物层不具有栅线的位置形成周期性凹陷；在所述硫化钼层上形成铜镓铟层，所述铜镓铟层填充所述周期性凹陷且为上表面形成为一平面，最终形成了一个平整结构的光电传感器。

Description

基于硫化钼和铜镓铟的光电传感器
技术领域
本发明涉及一种传感器，具体涉及一种基于硫化钼和铜镓铟的光电传感器。
背景技术
光电传感器一般由处理通路和处理元件两部分组成。其基本原理是以光电效应为基础，把被测量的变化转换成光信号的变化，然后借助光电元件进一步将非电信号转换成电信号。光电效应是指用光照射某一物体，可以看作是一连串带有一定能量为的光子轰击在这个物体上，此时光子能量就传递给电子，并且是一个光子的全部能量一次性地被一个电子所吸收，电子得到光子传递的能量后其状态就会发生变化，从而使受光照射的物体产生相应的电效应。通常把光电效应分为三类：(1)在光线作用下能使电子逸出物体表面的现象称为外光电效应，如光电管、光电倍增管等；(2)在光线作用下能使物体的电阻率改变的现象称为内光电效应，如光敏电阻、光敏晶体管等；(3)在光线作用下，物体产生一定方向电动势的现象称为光生伏特效应，如光电池等。
光敏二极管是最常见的光传感器。光敏二极管的外型与一般二极管一样，当无光照时，它与普通二极管一样，反向电流很小，称为光敏二极管的暗电流；当有光照时，载流子被激发，产生电子-空穴，称为光电载流子。在外电场的作用下，光电载流子参与导电，形成比暗电流大得多的反向电流，该反向电流称为光电流。光电流的大小与光照强度成正比，于是在负载电阻上就能得到随光照强度变化而变化的电信号。
发明内容
为了提高光敏二极管的探测效率，通过对结构和材料选择进行同时改进，提供了一种基于硫化钼和铜镓铟的光电传感器，包含：
绝缘基板；
绝缘基板上的金属电极层；金属电极层上设置有透明导电氧化物层，所述透明导电氧化物层上设置有透明导电氧化物栅线，所述透明导电氧化物栅线间隔大于透明导电氧化物栅线的宽度；
在所述透明导电氧化物层和透明导电氧化物栅线上形成硫化钼层，所述硫化钼层对应透明导电氧化物层不具有栅线的位置形成周期性凹陷；
在所述硫化钼层上形成铜镓铟层，所述铜镓铟层填充所述周期性凹陷且为上表面形成为一平面；
在所述铜镓铟层上形成ITO层。
硫化钼在薄膜晶体管和光电探测器等光电子器件方面引起了广泛的研究兴趣。苏州大学功能纳米与软物质学院孙宝全教授团队与新加坡南洋理工大学张华教授团队合作，利用层状硫化钼材料的优异光电性能，创新性的将其应用在有机光伏电池中，获得了光电装换效率为8.1％的高性能光伏器件。在本申请中我们发现硫化钼配合铜镓铟层也能够获得较好的探测效率。
进一步地，透明导电氧化物栅线的宽度为200-3000μm。
进一步地，所述硫化钼层的厚度小于所述透明导电氧化物栅线的厚度。
进一步地，所述铜铟镓层的厚度为所述硫化钼层厚度的2-3倍。
进一步地，所述硫化钼层中还掺杂有硫化钨。
进一步地，所述硫化钼层中的掺杂硫化钨为渐变式掺杂，从底部至上钨元素的掺杂浓度从0％-20％变化。
进一步地，所述透明导电氧化物层中掺杂有纳元素。
进一步地，所述金属电极层的材料选自下列材料：银、铜、钯、锌、铂或者金。
本发明的有益效果在于：本申请制备了一种新结构的光电传感器，包括透明导电氧化物栅线，在所述透明导电氧化物层和透明导电氧化物栅线上形成硫化钼层，所述硫化钼层对应透明导电氧化物层不具有栅线的位置形成周期性凹陷；在所述硫化钼层上形成铜镓铟层，所述铜镓铟层填充所述周期性凹陷且为上表面形成为一平面，最终形成了一个平整结构的光电传感器，但是，在透明氧化物栅线上形成了具有凹槽结构硫化钼，使硫化钼与铜镓铟层接触的面积相对于传感器面积得到了很大的提升，另外，掺杂硫化钨同样也能实现较好的光电传感。
附图说明
图1为本发明基于硫化钼和铜镓铟的光电传感器的结构示意图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳的实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
下面将结合附图及具体实施例对本发明作进一步详细说明。
参见图1，本发明提供一种基于硫化钼和铜镓铟的光电传感器，其特征在于，包含：
绝缘基板1；
绝缘基板1上的金属电极层2；金属电极层2上设置有透明导电氧化物层3，所述透明导电氧化物层3上设置有透明导电氧化物栅线4，所述透明导电氧化物栅线4间隔大于透明导电氧化物栅线4的宽度，透明导电氧化物栅线4可以通过掩模沉积或者在掩模下刻蚀透明导电氧化物层3形成；
在所述透明导电氧化物层3和透明导电氧化物栅线4上形成硫化钼层5，所述硫化钼层5对应透明导电氧化物层3不具有栅线的位置形成周期性凹陷；
在所述硫化钼层5上形成铜镓铟层6，所述铜镓铟层6填充所述周期性凹陷且为上表面形成为一平面；
在所述铜镓铟层6上形成ITO层7。
进一步地，透明导电氧化物栅线4的宽度为200-3000μm。
进一步地，所述硫化钼层5的厚度小于所述透明导电氧化物栅线4的厚度。
进一步地，所述铜铟镓层的厚度为所述硫化钼层5厚度的2-3倍，此处所指的铜铟镓层的厚度是铜铟镓层最薄处的层厚相对于硫化钼的厚度。
进一步地，所述硫化钼层5中还掺杂有硫化钨。
进一步地，所述硫化钼层5中的掺杂硫化钨为渐变式掺杂，从底部至上钨元素的掺杂浓度从0％-20％变化。
进一步地，所述透明导电氧化物层3中掺杂有纳元素。
进一步地，所述金属电极层2的材料选自下列材料：银、铜、钯、锌、铂或者金。
本发明提供了一种新结构的光电传感器，包括透明导电氧化物栅线，在所述透明导电氧化物层和透明导电氧化物栅线上形成硫化钼层，所述硫化钼层对应透明导电氧化物层不具有栅线的位置形成周期性凹陷；在所述硫化钼层上形成铜镓铟层，所述铜镓铟层填充所述周期性凹陷且为上表面形成为一平面，最终形成了一个平整结构的光电传感器，但是，在透明氧化物栅线上形成了具有凹槽结构硫化钼，使硫化钼与铜镓铟层接触的面积相对于传感器面积得到了很大的提升，另外，掺杂硫化钨同样也能实现较好的光电传感。
附图中描述位置关系的用于仅用于示例性说明，不能理解为对本专利的限制，显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (8)

1.一种基于硫化钼和铜镓铟的光电传感器，其特征在于，包含：
绝缘基板；
绝缘基板上的金属电极层；金属电极层上设置有透明导电氧化物层，所述透明导电氧化物层上设置有透明导电氧化物栅线，所述透明导电氧化物栅线间隔大于透明导电氧化物栅线的宽度；
在所述透明导电氧化物层和透明导电氧化物栅线上形成硫化钼层，所述硫化钼层对应透明导电氧化物层不具有栅线的位置形成周期性凹陷；
在所述硫化钼层上形成铜镓铟层，所述铜镓铟层填充所述周期性凹陷且为上表面形成为一平面；
在所述铜镓铟层上形成ITO层。
2.如权利要求1所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，透明导电氧化物栅线的宽度为200-3000μm。
3.如权利要求1所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，所述硫化钼层的厚度小于所述透明导电氧化物栅线的厚度。
4.如权利要求1所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，所述铜铟镓层的厚度为所述硫化钼层厚度的2-3倍。
5.如权利要求1-4任一项权利要求所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，所述硫化钼层中还掺杂有硫化钨。
6.如权利要求5所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，所述硫化钼层中的掺杂硫化钨为渐变式掺杂，从底部至上钨元素的掺杂浓度从0％-20％变化。
7.如权利要求1所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，所述透明导电氧化物层中掺杂有纳元素。
8.如权利要求1所述的基于硫化钼和铜镓铟的光电传感器，其特征在于，所述金属电极层的材料选自下列材料：银、铜、钯、锌、铂或者金。
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