CN106910843A - Blue-light-emitting OLED and preparation method thereof - Google Patents

Blue-light-emitting OLED and preparation method thereof Download PDF

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Publication number
CN106910843A
CN106910843A CN201710229697.3A CN201710229697A CN106910843A CN 106910843 A CN106910843 A CN 106910843A CN 201710229697 A CN201710229697 A CN 201710229697A CN 106910843 A CN106910843 A CN 106910843A
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China
Prior art keywords
firpic
layer
evaporation
glass substrate
thickness
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Inventor
钟建
朱云柯
陈辉
邵双双
雷疏影
林宇
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

Abstract

The invention discloses it is a kind of based on FIrpic as decorative layer blue light organic emissive device and preparation method, include substrate, anode, hole injection layer, hole transmission layer, luminescent layer, decorative layer, electron injecting layer and negative electrode successively, decorative layer is undoped FIrpic superthin layers.Phosphor material FIrpic is modified CBP by the present invention for functional layer first:The blue doping luminescent layers of FIrpic, greatly improve brightness, current density, power efficiency, the EQE of Nan dian Yao device, and preparation process is simple, low cost, luminescent material is applied into great novelty as functionalized modification layer, the device performance of gained is good, is with a wide range of applications.

Description

Blue-light-emitting OLED and preparation method thereof
Technical field
The invention belongs to semiconductor display technology field, it is related to a kind of blue light of the ultra-thin decorative layer based on FIrpic organic Light emitting diode and preparation method thereof.
Background technology
All the time, it is exactly vision that the mankind are used for obtaining most important in the perception of information.Into after the information age, Increase with digital information explosion type, requirement of the people to display device is also stepped up.Put down for current of greatest concern For panel display device, the black-and-white crystal electronic watch of limited numeral is only able to display from the beginning, gorgeous complexity can be showed till now The large-scale curved high-definition display screen of picture, the continuous progress of human sciences's technology will be continued to develop with display is scientific and technological, and Can be reflected in everywhere in people's life.
The characteristics of organic electroluminescence device (OrganicLight-EmittingDevice, OLED), is very distinct.With work as Lower conventional liquid crystal display mode is different, and OLED is spontaneous luminous, and after plus appropriate voltage, carrier can directly exist device Recombination luminescence in the luminescent layer of device, such spontaneous light characteristic not only solves that liquid crystal display is perishable, visible angle is small Hard nut to crack, more causes that the display screen made using OLED technology no longer needs the photoswitch and backlight of complexity, allows lighter The appearance of more thin display becomes possibility.Due to these advantages and characteristic, so display industry unanimously assert that OLED technology is worked as To have nothing to be ashamed of be the bellwether for opening Display Technique of future generation.
It is fluorescent material that can be divided into the classes of two class mono- for the luminescent material in OLED, and a class is phosphor material.According to spin Quantum statistics is theoretical, and the formation probability ratio of singlet excitons and triplet exciton is 1: 3 after electronics and hole-recombination, i.e. substance State exciton only accounts for the 25% of " electron-hole pair ", and 75% " electron-hole pair " swashs due to foring the triplet of spin forbidden Son is to " electroluminescent " without contribution.Therefore, the simple fluorescence luminescent material luminous by singlet excitons attenuation, its electricity The maximum internal quantum efficiency of photoluminescence is 25%.Phosphor material can be realized being mixed with singlet state and triple by intersystem crossing The luminous phosphorescent emissions of state.In theory, using the OLED internal quantum efficiencies of phosphor material making up to 100%, its luminous effect Rate improves three times than fluorescent material.Late 1990s, the Forrest professors of Princeton university and University of Southern California The cooperation of Thompson professors Liang Ge research groups, successfully using platinum-metalloporphyrin complex, Cyclometalated iridium-phenylpyridine Complex is as phosphorescent coloring and charge transporting host material by the common method making organic electroluminescence device being deposited with Luminescent layer, the external quantum efficiency of device respectively reaches 4% and 8%, is greatly improved relative to electrochromic fluorescent devices.Closely Several years, the research based on heavy metal complex, particularly iridium complex electroluminescent phosphor material and device turned into current Organic Electricity The focus of photoluminescence area research.Wherein, the multilayer OLED for being made as phosphor material by the use of complex of iridium, it is maximum External quantum efficiency has reached 19.2%, and energy conversion efficiency is 72lm/W (65cd/m2).
The selection of modification layer material and thickness and concentration are one of principal elements of influence Organic Light Emitting Diode performance, The selection of material, preparation method have vital influence on Organic Light Emitting Diode.FIrpic has high triplet energy level, The advantages of low lumo energy, and easily cause triplet to be buried in oblivion in host-guest system, because appointing the right preparation technology that exists to answer Miscellaneous, step is complicated, the problem that PE (power efficiency) and CE (current efficiency) and brightness cannot take into account simultaneously.
The content of the invention
It is an object of the invention to by the use of FIrpic as decorative layer, improve the CE (current efficiency) and PE (work(of device Rate efficiency), realize high performance blue light organic emissive diode.For this provides a kind of ultra-thin decorative layer based on FIrpic Blue light organic emissive diode preparation method.
The technical scheme is that:It is a kind of based on FIrpic as the blue light organic emissive device of decorative layer, wrap successively Include substrate, anode, hole injection layer, hole transmission layer, luminescent layer, decorative layer, electron injecting layer and negative electrode, it is characterised in that Modification layer material is Firpic, and luminescent layer is that material is CBP ︰ FIrpic.
Further, the thickness of Firpic material layers is 0.5nm.
Further, in luminescent layer, the doping of Firpic is 12%.
Further, hole injection layer material is MoO3
Further, hole transmission layer is made up of NPB material layers and TCTA material layers.
Further, electron injecting layer material is TPBi.
Further, device architecture is:
Glass substrate/ITO/MoO3/NPB/TCTA/CBP:FIrpic/FIrpic/TPBi/Mg:Ag;Wherein, MoO3Thickness It is 5nm to spend, and NPB thickness degree is 40nm, and TCTA thickness degree is 15nm, CBP:Firpic layers of thickness is 20nm, Firpic thickness It is 0.5nm to spend, and TPBi thickness degree is 35nm.
It is a kind of based on FIrpic as the blue light organic emissive device of decorative layer preparation method, step is as follows:
(1) ito glass substrate is cleaned;
(2) method by vacuum evaporation on ito glass substrate prepares hole injection layer;
(3) method by vacuum evaporation on hole injection layer prepares hole transmission layer;
(4) device after step (3) treatment is put into organic vacuum cavity, room air pressure to be deposited is less than 3 × 10-4Pa, WithEvaporation rate, with CBP as material of main part, FIrpic carries out mixing evaporation as guest emitting material, prepares luminous Layer, after light emitting layer thickness reach it is predetermined after, then withEvaporation rate carry out the evaporation of FIrpic materials, prepare decorative layer, Thickness degree to be finished reaches after making a reservation for and terminates evaporation;
(5) method by vacuum evaporation on decorative layer prepares electron injecting layer;
(6) method by vacuum evaporation on electron injecting layer prepares negative electrode.
Further, step is as follows:
(1) ito glass substrate is cleaned:A () sets ultrasonic instrument parameter:30 DEG C of temperature, time 15min, power 70w;(b) Acetone is stained with non-dust cloth and wipes ito glass substrate surface, untill being observed visually without granule foreign;C () will clean dry Net ito glass substrate is placed on teflon substrate frame, is carried out in the beaker of the deionized water for placing into dress detergent The first step is cleaned by ultrasonic;D () takes out substrate frame, with to be placed into after acetone rinsing, carry out second step in the beaker equipped with acetone clear Wash;E () carries out the ultrasonic cleaning of the 3rd step with deionized water to ito glass substrate, (f) takes out substrate frame, after being rinsed with isopropanol Being put into the beaker equipped with isopropanol carries out the cleaning of the 4th step, and (g) is put into 20 minutes in baking box, the ito glass lining that (h) will be dried Bottom is taken out, and is put into glass dish, is placed into and carry out in UV devices UV and irradiate 15 minutes;
(2) hole injection layer is prepared:Ito glass substrate after step (1) treatment is put into vacuum chamber, with MoO3As Hole injection layer material;Room air pressure to be deposited is less than 1.8 × 10-3Pa, starts to rise to 20A to itself plus electric current, withEvaporation Speed obtains the film that thickness is 5nm;
(3) hole transmission layer is prepared:Ito glass substrate after step (2) treatment is put into vacuum chamber, with NPB and Used as hole transport layer material, room air pressure to be deposited is less than 3 × 10 to TCTA-4Pa, withEvaporation rate, treat that thickness reaches respectively Reach after 40nm and 15nm, terminate evaporation;
(4) luminescent layer and decorative layer are prepared:Ito glass substrate after step (3) treatment is put into organic vacuum cavity, Mixing evaporation is carried out as emitting layer material using CBP and FIrpic, room air pressure to be deposited is less than 3 × 10-4Pa, withEvaporation Speed, after thickness reaches 20nm again withEvaporation rate carry out the evaporation of FIrpic materials, treat that thickness reaches Terminate evaporation after 0.5nm;
(5) electron injecting layer is prepared:Ito glass substrate after step (4) treatment is put into organic vacuum cavity, with Used as electron injecting layer, room air pressure to be deposited is less than 3 × 10 to TPBi materials-4Pa, withEvaporation rate, treat that thickness reaches 35nm terminates evaporation;
(6) metallic cathode is prepared:Ito glass substrate after step (5) treatment is put into metal vacuum deposition chamber, with Mg and As metallic cathode, room air pressure to be deposited is less than 1.8 × 10 to Ag-3Pa, withEvaporation rate obtain thickness for 200nm Metallic film.
In the present invention:
FIrpic refers to:Double (4,6- difluorophenyl pyridinatos-N, C2) pyridinecarboxylics close iridium;
CBP refers to:4,4- bis- (9- carbazoles) biphenyl 4,4';
TPBi refers to:1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene;
NPB refers to:N, N'- diphenyl-N, N'- (1- naphthyls) -1,1'- biphenyl -4,4'- diamines N, N';
TCTA refers to:(carbazole -9- bases) triphenylamines of 4,4', 4 "-three 4,4', 4 ";
The present invention has the following advantages that compared with prior art:
The present invention is individually first extremely of practical meaning as one layer of undoped decorative layer using phosphor material FIrpic , phosphorescent light-emitting materials are greatly improved as decorative layer device electricity Liu Mi Du ﹑ current efficiency and power efficiency and Brightness, significantly reduces experimental procedure and cost of manufacture.
Brief description of the drawings
Fig. 1 is the structural representation of blue light organic emissive device of the invention.
Fig. 2 is device architecture:Glass substrate/ITO/MoO3 (5nm)/NPB (40nm)/TCTA (15nm)/CBP:FIrpic (25nm)/FIrpic(0.5nm)/TPBi(35nm)/Mg:The normalization light spectrogram of Ag.
Fig. 3 is device architecture:Glass substrate/ITO/MoO3 (5nm)/NPB (40nm)/TCTA (15nm)/CBP:FIrpic (20nm)/FIrpic(0.5nm)/TPBi(35nm)/Mg:The voltage-current density curve map of Ag.
Fig. 4 is device architecture:Glass substrate/ITO/MoO3 (5nm)/NPB (40nm)/TCTA (15nm)/CBP:FIrpic (20nm)/FIrpic(0.5nm)/TPBi(35nm)/Mg:The current density of Ag-current efficiency figure.
Specific embodiment
It is a kind of based on FIrpic as decorative layer blue light organic emissive device, successively including substrate, anode, hole injection Layer, hole transmission layer, luminescent layer, decorative layer, electron injecting layer and negative electrode, decorative layer are Firpic material layers, and luminescent layer is material Expect to be CBP ︰ FIrpic.Device of the invention is by the ultra-thin blue phosphorescent rhetorical function layer of one layer of the addition after the luminescent layer that adulterates Greatly improve device efficiency.Preferably, the thickness of Firpic material layers is 0.5nm.In luminescent layer, the doping of Firpic It is 12% (mass percent).Preferably, hole injection layer material is MoO3.Hole transmission layer is by NPB material layers and TCTA materials The bed of material is constituted.Electron injecting layer material is TPBi.
Most preferably, device architecture is:
Glass substrate/ITO/MoO3/NPB/TCTA/CBP:FIrpic/FIrpic/TPBi/Mg:Ag;Wherein, MoO3Thickness It is 5nm to spend, and NPB thickness degree is 40nm, and TCTA thickness degree is 15nm, CBP:Firpic layers of thickness is 20nm, Firpic thickness It is 0.5nm to spend, and TPBi thickness degree is 35nm.
It is a kind of based on FIrpic as the blue light organic emissive device of decorative layer preparation method, step is as follows:
(1) ito glass substrate is cleaned;
(2) method by vacuum evaporation on ito glass substrate prepares hole injection layer;
(3) method by vacuum evaporation on hole injection layer prepares hole transmission layer;
(4) device after step (3) treatment is put into organic vacuum cavity, room air pressure to be deposited is less than 3 × 10-4Pa, WithEvaporation rate, with CBP as material of main part, FIrpic carries out mixing evaporation as guest emitting material, prepares luminous Layer, after light emitting layer thickness reach it is predetermined after, then withEvaporation rate carry out the evaporation of FIrpic materials, prepare decorative layer, Thickness degree to be finished reaches after making a reservation for and terminates evaporation;
(5) method by vacuum evaporation on decorative layer prepares electron injecting layer;
(6) method by vacuum evaporation on electron injecting layer prepares negative electrode.
Embodiment 1
As shown in figure 1, it is a kind of based on FIrpic as decorative layer blue light organic emissive device, successively including substrate, sun Pole, hole injection layer, hole transmission layer, luminescent layer, decorative layer, electron injecting layer and negative electrode, the luminescent layer is by material of main part Formed with guest materials doping, decorative layer is FIrpic.
Concrete structure is:Glass substrate/ITO/MoO3 (5nm)/NPB (40nm)/TCTA (15nm)/CBP:FIrpic (20nm)/FIrpic(0.5nm)/TPBi(35nm)/Mg:Ag。
Preparation method is:
(1) ito glass substrate is cleaned:A () sets ultrasonic instrument parameter:30 DEG C of temperature, time 15min, power 70w;(b) Acetone is stained with non-dust cloth and wipes ito glass substrate surface, untill being observed visually without granule foreign;C () will clean dry Net ito glass substrate is placed on teflon substrate frame, is carried out in the beaker of the deionized water for placing into dress detergent The first step is cleaned by ultrasonic;D () takes out substrate frame, with to be placed into after acetone rinsing, carry out second step in the beaker equipped with acetone clear Wash;E () carries out the ultrasonic cleaning of the 3rd step with deionized water to ito glass substrate, (f) takes out substrate frame, after being rinsed with isopropanol Being put into the beaker equipped with isopropanol carries out the cleaning of the 4th step, and (g) is put into 20 minutes in baking box, the ito glass lining that (h) will be dried Bottom is taken out, and is put into glass dish, is placed into and carry out in UV devices UV and irradiate 15 minutes;
(2) hole injection layer is prepared:Ito glass substrate after step (1) treatment is put into vacuum chamber, with MoO3As Hole injection layer material;Room air pressure to be deposited is less than 1.8 × 10-3Pa, starts to rise to 20A to itself plus electric current, withEvaporation Speed obtains the film that thickness is 5nm;
(3) hole transmission layer is prepared:Ito glass substrate after step (2) treatment is put into vacuum chamber, with NPB and Used as hole transport layer material, room air pressure to be deposited is less than 3 × 10 to TCTA-4Pa, withEvaporation rate, treat that thickness reaches respectively Reach after 40nm and 15nm, terminate evaporation;
(4) luminescent layer and decorative layer are prepared:Ito glass substrate after step (3) treatment is put into organic vacuum cavity, Mixing evaporation is carried out as emitting layer material using CBP and FIrpic, room air pressure to be deposited is less than 3 × 10-4Pa, withEvaporation Speed, after thickness reaches 20nm again withEvaporation rate carry out the evaporation of FIrpic materials, treat that thickness reaches Terminate evaporation after 0.5nm;
(5) electron injecting layer is prepared:Ito glass substrate after step (4) treatment is put into organic vacuum cavity, with Used as electron injecting layer, room air pressure to be deposited is less than 3 × 10 to TPBi materials-4Pa, withEvaporation rate, treat that thickness reaches 35nm terminates evaporation.
(6) metallic cathode is prepared:Ito glass substrate after step (5) treatment is put into metal vacuum deposition chamber, with Mg and As metallic cathode, room air pressure to be deposited is less than 1.8 × 10 to Ag-3Pa, withEvaporation rate obtain thickness for 200nm Metallic film.
Embodiment described above only expresses the specific embodiment of the application, and its description is more specific and detailed, but simultaneously Therefore the limitation to the application protection domain can not be interpreted as.It should be pointed out that for one of ordinary skill in the art For, on the premise of technical scheme design is not departed from, various modifications and improvements can be made, these belong to this The protection domain of application.

Claims (9)

1. it is a kind of based on FIrpic as decorative layer blue light organic emissive device, successively including substrate, anode, hole injection Layer, hole transmission layer, luminescent layer, decorative layer, electron injecting layer and negative electrode, it is characterised in that modification layer material is Firpic, hair Photosphere is that material is CBP ︰ FIrpic.
2. it is according to claim 1 it is a kind of based on FIrpic as decorative layer blue light organic emissive device, its feature exists In the thickness of Firpic material layers is 0.5nm.
3. it is according to claim 1 it is a kind of based on FIrpic as decorative layer blue light organic emissive device, its feature exists In in luminescent layer, the doping of Firpic is 12%.
4. it is according to claim 1 it is a kind of based on FIrpic as decorative layer blue light organic emissive device, its feature exists In hole injection layer material is MoO3
5. it is according to claim 1 it is a kind of based on FIrpic as decorative layer blue light organic emissive device, its feature exists In hole transmission layer is made up of NPB material layers and TCTA material layers.
6. it is according to claim 1 it is a kind of based on FIrpic as decorative layer blue light organic emissive device, its feature exists In electron injecting layer material is TPBi.
7. according to claim any one of 1-6 it is a kind of based on FIrpic as decorative layer blue light organic emissive device, Characterized in that, device architecture is:Glass substrate/ITO/MoO3/NPB/TCTA/CBP:FIrpic/FIrpic/TPBi/Mg: Ag;Wherein, MoO3Thickness degree is 5nm, and NPB thickness degree is 40nm, and TCTA thickness degree is 15nm, CBP:Firpic layers of thickness is 20nm, Firpic thickness degree are 0.5nm, and TPBi thickness degree is 35nm.
8. a kind of according to claim any one of 1-6 based on FIrpic as the blue light organic emissive device of decorative layer Preparation method, it is characterised in that step is as follows:
(1) ito glass substrate is cleaned;
(2) method by vacuum evaporation on ito glass substrate prepares hole injection layer;
(3) method by vacuum evaporation on hole injection layer prepares hole transmission layer;
(4) device after step (3) treatment is put into organic vacuum cavity, room air pressure to be deposited is less than 3 × 10-4Pa, withEvaporation rate, with CBP as material of main part, FIrpic carries out mixing evaporation as guest emitting material, prepares luminous Layer, after light emitting layer thickness reach it is predetermined after, then withEvaporation rate carry out the evaporation of FIrpic materials, prepare decorative layer, Thickness degree to be finished reaches after making a reservation for and terminates evaporation;
(5) method by vacuum evaporation on decorative layer prepares electron injecting layer;
(6) method by vacuum evaporation on electron injecting layer prepares negative electrode.
9. it is according to claim 8 it is a kind of based on FIrpic as the blue light organic emissive device of decorative layer preparation side Method, it is characterised in that step is as follows:
(1) ito glass substrate is cleaned:A () sets ultrasonic instrument parameter:30 DEG C of temperature, time 15min, power 70w;B () uses nothing Dirt cloth is stained with acetone and wipes ito glass substrate surface, untill being observed visually without granule foreign;C () will scrub Ito glass substrate is placed on teflon substrate frame, and first is carried out in the beaker of the deionized water for placing into dress detergent Step is cleaned by ultrasonic;D () takes out substrate frame, carry out second step in the beaker equipped with acetone and cleaned with being placed into after acetone rinsing;(e) The ultrasonic cleaning of the 3rd step is carried out to ito glass substrate with deionized water, (f) takes out substrate frame, dress is put into after being rinsed with isopropanol The beaker for having isopropanol carries out the cleaning of the 4th step, and (g) is put into 20 minutes in baking box, and (h) takes the ito glass substrate of drying Go out, be put into glass dish, place into and carry out in UV devices UV and irradiate 15 minutes;
(2) hole injection layer is prepared:Ito glass substrate after step (1) treatment is put into vacuum chamber, with MoO3As hole Injection layer material;Room air pressure to be deposited is less than 1.8 × 10-3Pa, starts to rise to 20A to itself plus electric current, withEvaporation rate Obtain the film that thickness is 5nm;
(3) hole transmission layer is prepared:Ito glass substrate after step (2) treatment is put into vacuum chamber, is made with NPB and TCTA It is hole transport layer material, room air pressure to be deposited is less than 3 × 10-4Pa, withEvaporation rate, treat that thickness is respectively reached and reach After 40nm and 15nm, terminate evaporation;
(4) luminescent layer and decorative layer are prepared:Ito glass substrate after step (3) treatment is put into organic vacuum cavity, with CBP and FIrpic carries out mixing evaporation as emitting layer material, and room air pressure to be deposited is less than 3 × 10-4Pa, withEvaporation speed Rate, after thickness reaches 20nm again withEvaporation rate carry out the evaporation of FIrpic materials, treat that thickness reaches 0.5nm After terminate evaporation;
(5) electron injecting layer is prepared:Ito glass substrate after step (4) treatment is put into organic vacuum cavity, with TPBi materials Used as electron injecting layer, room air pressure to be deposited is less than 3 × 10 to material-4Pa, withEvaporation rate, treat that thickness reaches 35nm and terminates Evaporation;
(6) metallic cathode is prepared:Ito glass substrate after step (5) treatment is put into metal vacuum deposition chamber, is done with Mg and Ag It is metallic cathode, room air pressure to be deposited is less than 1.8 × 10-3Pa, withEvaporation rate obtain thickness be 200nm metal Film.
CN201710229697.3A 2017-04-10 2017-04-10 Blue-light-emitting OLED and preparation method thereof Pending CN106910843A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085765A (en) * 2019-04-28 2019-08-02 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040137267A1 (en) * 2002-12-27 2004-07-15 Fuji Photo Film Co., Ltd. Organic electroluminescent device
CN1541035A (en) * 2003-03-27 2004-10-27 ������������ʽ���� Organic electroluminesscence element
CN102239580A (en) * 2008-10-07 2011-11-09 欧司朗光电半导体有限公司 Radiation emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040137267A1 (en) * 2002-12-27 2004-07-15 Fuji Photo Film Co., Ltd. Organic electroluminescent device
CN1541035A (en) * 2003-03-27 2004-10-27 ������������ʽ���� Organic electroluminesscence element
CN102239580A (en) * 2008-10-07 2011-11-09 欧司朗光电半导体有限公司 Radiation emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
VADIM I.ADAMOVICH等: "New charge-carrier blocking materials for high efficiency OLEDs", 《ORGANIC ELECTRONICS》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085765A (en) * 2019-04-28 2019-08-02 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN110085765B (en) * 2019-04-28 2021-08-24 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof

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Application publication date: 20170630