CN106876489A - Based on CH3NH3PbI3Two-way HHET devices of p-type of material and preparation method thereof - Google Patents
Based on CH3NH3PbI3Two-way HHET devices of p-type of material and preparation method thereof Download PDFInfo
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- CN106876489A CN106876489A CN201710074139.4A CN201710074139A CN106876489A CN 106876489 A CN106876489 A CN 106876489A CN 201710074139 A CN201710074139 A CN 201710074139A CN 106876489 A CN106876489 A CN 106876489A
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- 239000000463 material Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 35
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005525 hole transport Effects 0.000 claims abstract description 24
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 48
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 26
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000003756 stirring Methods 0.000 claims description 22
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 16
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000004528 spin coating Methods 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052593 corundum Inorganic materials 0.000 claims description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 10
- 150000001868 cobalt Chemical class 0.000 claims description 8
- 229910003002 lithium salt Inorganic materials 0.000 claims description 8
- 159000000002 lithium salts Chemical class 0.000 claims description 8
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 8
- 239000012300 argon atmosphere Substances 0.000 claims description 6
- 239000013049 sediment Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 235000009262 Dracaena angustifolia Nutrition 0.000 claims description 3
- 240000007833 Dracaena angustifolia Species 0.000 claims description 3
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 8
- 239000010980 sapphire Substances 0.000 abstract description 8
- 238000005286 illumination Methods 0.000 abstract description 5
- 230000009466 transformation Effects 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 41
- 239000010931 gold Substances 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000005622 photoelectricity Effects 0.000 description 6
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- 239000010408 film Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
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- 238000009413 insulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
CH is based on the present invention relates to one kind3NH3PbI3Two-way HHET devices of p-type of material and preparation method thereof.The method includes：FTO electro-conductive glass is made in the substrate material surface chosen；The first light absorbing zone is made in the FTO conductive glass surfaces；The first hole transmission layer is made on the first light absorbing zone surface；Source-drain electrode is made in the first hole transport layer surface；The second hole transmission layer is made in whole substrate surface；The second light absorbing zone is prepared in the second hole transport layer surface；Gate electrode is made on the second light absorbing zone surface, the two-way HHET devices are ultimately formed.The present invention can absorb more light and produce photo-generated carrier by using symmetrical light absorbing zone, and as bottom gate electrode, can realize that upper and lower illumination can be irradiated to light absorbing zone using in the transparent electro-conductive glass of transparent sapphire growth, and using by CH3NH3PbI3Substantial amounts of hole is provided to raceway groove, raising mobility is high, strengthen transmission characteristic and increase photoelectric transformation efficiency.
Description
Technical field
The invention belongs to technical field of integrated circuits, and in particular to one kind is based on CH3NH3PbI3The two-way HHET of p-type of material
Device and preparation method thereof.
Background technology
With flourishing for electronic technology, semiconductor integrated circuit is got over to the role of social development and national economy
Come bigger.It is and wherein market is growing day by day to the demand of photoelectricity high speed device and higher thinner to the continuous proposition of performance of device
The requirement of cause.It is seeking breakthrough, no matter from technique, the research of the aspect such as material or structure does not have interruption always.In recent years, with
The emergence of visible ray wireless communication technique and circuit coupling technique, photoelectricity high hole mobility of the market to visible light wave range
Crystal (High Hole Mobility Transistor, abbreviation HHET) pipe proposes new requirement.
Organic/inorganic perovskite (CH3NH3PbI3) be announced to the world splendidly, and to research bring new visual angle.Organic/inorganic
The orderly combination of organic group and inorganic group in perovskite, has obtained the crystal structure of long-range order, and has had concurrently organic
With the advantage of inorganic material.The high mobility of inorganic component imparts the good electrology characteristic of hydridization perovskite；Organic component
Self assembly and film forming characteristics so that the preparation process is simple and low cost of hydridization perovskite thin film, it is also possible to enter at room temperature
OK.The absorption coefficient of light of hydridization perovskite this height is also the capital that hydridization perovskite can be applied in photoelectric material.
Traditional inorganic HHET high hole mobility transistors are all belonging to electric energy to the conversion of electric energy, and it is right to meet
The demand of the photoelectricity high hole mobility transistor of visible light wave range.Therefore, how using CH3NH3PbI3The characteristic of material is made
Standby p-type photoelectricity HHET devices just become of crucial importance.
The content of the invention
In order to solve the above-mentioned problems in the prior art, CH is based on the invention provides one kind3NH3PbI3The N of material
Two-way HHET devices of type and preparation method thereof.
CH is based on An embodiment provides one kind3NH3PbI3The preparation of the two-way HHET devices of p-type of material
Method, including：
FTO electro-conductive glass is made in the substrate material surface chosen；
The first light absorbing zone is made in the FTO conductive glass surfaces；
The first hole transmission layer is made on the first light absorbing zone surface；
Source-drain electrode is made in the first hole transport layer surface；
The second hole transmission layer is made in whole substrate surface；
The second light absorbing zone is prepared in the second hole transport layer surface；
Gate electrode is made on the second light absorbing zone surface, the two-way HHET devices are ultimately formed.
In one embodiment of the invention, electro-conductive glass film is made in the substrate material surface chosen, including：
Choose Al2O3Material is used as the backing material；
In the Al2O3Material surface makes the FTO electro-conductive glass.
In one embodiment of the invention, in the Al2O3Material surface makes the FTO electro-conductive glass, including：
Sediment is obtained after butyl titanate is added into redistilled water into stirring；
The substrate surface is applied to after being stirred in the mixed liquor that the sediment is added redistilled water and concentrated nitric acid
To form the FTO electro-conductive glass.
In one embodiment of the invention, the first light absorbing zone is made in the FTO conductive glass surfaces, including：
By PbI2And CH3NH3I successively adds DMSO:In GBL and stir, CH is formed after standing3NH3PbI3Solution；
By the CH3NH3PbI3Solution is spin-coated on the FTO conductive glass surfaces and forms described by annealing process
One light absorbing zone.
In one embodiment of the invention, the first hole transmission layer is made on the first light absorbing zone surface, including：
Preparation chlorobenzene solution, and add the acetonitrile solution of the acetonitrile solution of lithium salts, tetra-tert pyridine and cobalt salt, normal temperature to stir
Mix to form Spiro-OMeTAD solution；
The Spiro-OMeTAD solution is dropped into the first light absorbing zone surface and spin coating forms first sky
Cave transport layer.
In one embodiment of the invention, source-drain electrode is made in the first hole transport layer surface, including：
Using Au materials as target, under an argon atmosphere, using magnetron sputtering technique, using the first mask plate described
First hole transport layer surface sputters Au materials as the source-drain electrode.
The second hole transmission layer is made in whole substrate surface in one embodiment of the invention, including：
Preparation chlorobenzene solution, and add the acetonitrile solution of the acetonitrile solution of lithium salts, tetra-tert pyridine and cobalt salt, normal temperature to stir
Mix to form Spiro-OMeTAD solution；
The Spiro-OMeTAD solution is dropped into the source-drain electrode and described in not covered by the source-drain electrode
First hole transport layer surface and spin coating are forming second hole transmission layer.
In one embodiment of the invention, the second light absorbing zone is prepared in the second hole transport layer surface, including：
By PbI2And CH3NH3I successively adds DMSO:In GBL and stir, CH is formed after standing3NH3PbI3Solution；
Using single semar technique by the CH3NH3PbI3Solution is spin-coated on the second hole transport layer surface and by moving back
Ignition technique forms second light absorbing zone.
In one embodiment of the invention, gate electrode is made on the second light absorbing zone surface, including：
Using Au materials as target, under an argon atmosphere, using magnetron sputtering technique, using the second mask plate described
Second light absorbing zone surface sputters Au materials as the gate electrode.
An alternative embodiment of the invention provides a kind of based on CH3NH3PbI3The two-way HHET devices of p-type of material, its
In, the two-way HHET devices are prepared by any described method in above-described embodiment and formed.
The two-way HHET devices of p-type of the embodiment of the present invention, at least have the following advantages that relative to prior art：
1st, because transistor of the invention uses symmetrical hole transport layer transports hole barrier electronics, high hole is overcome
Electron-hole recombinations in mobility transistor, the low shortcoming of photoelectric transformation efficiency.
2nd, because transistor of the invention uses symmetrical light absorbing zone, more light can be absorbed and produces photo-generated carrier,
Enhancing device performance.
3rd, because transistor of the invention is used in the transparent electro-conductive glass FTO of transparent sapphire growth as bottom gate
Electrode, can realize that upper and lower illumination can be irradiated to light absorbing zone, strengthen device performance.
4th, because transistor of the invention uses symmetrical hole transport layer transports hole barrier electronics, can transmit more
Hole, strengthens device performance.
5th, transistor of the invention is used by CH3NH3PbI3Substantial amounts of hole is provided to raceway groove, two-way HHET high-altitudes are formed
Cave mobility transistor, high with mobility, switching speed is fast, and light absorbs enhancing, photo-generated carrier increases, and transmission characteristic increases
By force, the big advantage of photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The section of the two-way HHET devices of p-type of material shows
It is intended to；
Fig. 2 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The vertical view of the two-way HHET devices of p-type of material is shown
It is intended to；
Fig. 3 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The preparation side of the two-way HHET devices of p-type of material
Method schematic flow sheet；
Fig. 4 a- Fig. 4 h are provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The two-way HHET devices of p-type of material
Preparation method schematic diagram；
Fig. 5 is a kind of structural representation of first mask plate provided in an embodiment of the present invention；And
Fig. 6 is a kind of structural representation of second mask plate provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Traditional HHET high hole mobility transistors complex process and high cost, and it is based on CH3NH3PbI3Material
HHET prepares simple, low cost；Traditional inorganic HHET high hole mobility transistors are all belonging to electric energy to the conversion of electric energy,
Can not meet the demand to the photoelectricity high hole mobility transistor of visible light wave range, and CH3NH3PbI3Material have concurrently it is organic/
The property of inorganic material and excellent photoelectric characteristic itself, can be very good to meet photoelectricity high hole of the market to visible light wave range
The demand of mobility transistor, based on CH3NH3PbI3The HHET of material can produce substantial amounts of photo-generated carrier reality by illumination
Existing electric energy adds luminous energy to the conversion of electric energy, lifts conversion efficiency.In addition, being based on CH3NH3PbI3The HHET of material can be by grid
Control plus it is light-operated realize dual control, and the raising efficiency in terms of light can be realized by controlling light intensity.CH3NH3PbI3Material
Two-way HHET high hole mobility transistors can strengthen the utilization rate of light by upper and lower illumination, and then obtain higher efficiency
HHET devices.
Fig. 1 and Fig. 2, Fig. 1 are referred to for one kind provided in an embodiment of the present invention is based on CH3NH3PbI3The p-type of material is two-way
The schematic cross-section of HHET devices, Fig. 2 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The p-type of material is two-way
The schematic top plan view of HHET devices.Two-way HHET of the invention includes：Substrate 1, electro-conductive glass 2, light absorbing zone 3, hole transport
Layer 4, source-drain electrode 5, hole transmission layer 6, light absorbing zone 7, gate electrode 8.Substrate 1, electro-conductive glass 2, light absorbing zone 3, hole are passed
Defeated layer 4, source-drain electrode 5, hole transmission layer 6, light absorbing zone 7, the material distribution, shape vertically from the bottom to top in order of gate electrode 8
Into multilayer symmetric structure, two-way P-type HHET devices are constituted.
Described substrate 1 can use Sapphire Substrate；Described source-drain electrode 5 can use Au materials；Described hole passes
Defeated layer 4,6 can use Spiro-OMeTAD materials；Described light absorbing zone 3,7 can use CH3NH3PbI3Material；Described grid electricity
Pole 8 can use Au materials.
Fig. 3 is referred to, Fig. 3 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The two-way HHET devices of p-type of material
The preparation method schematic flow sheet of part.The method comprises the following steps：
Step 1, the substrate material surface making FTO electro-conductive glass in selection；
Step 2, the FTO conductive glass surfaces make the first light absorbing zone；
Step 3, the first light absorbing zone surface make the first hole transmission layer；
Step 4, the first hole transport layer surface make source-drain electrode；
Step 5, whole substrate surface make the second hole transmission layer；
Step 6, the second hole transport layer surface prepare the second light absorbing zone；
Step 7, the second light absorbing zone surface make gate electrode, ultimately form the two-way HHET devices.
For step 1, can include：
Step 11, selection Al2O3Material is used as the backing material；
Step 12, in the Al2O3Material surface makes the FTO electro-conductive glass.
For step 12, can include：
Step 121, by butyl titanate add into redistilled water stirring after obtain sediment；
Step 122, will the sediment add stir in the mixed liquor of redistilled water and concentrated nitric acid after be applied to it is described
Substrate surface is forming the FTO electro-conductive glass.
For step 2, can include：
Step 21, by PbI2And CH3NH3I successively adds DMSO:In GBL and stir, CH is formed after standing3NH3PbI3It is molten
Liquid；
Step 22, by the CH3NH3PbI3Solution is spin-coated on the FTO conductive glass surfaces and is formed by annealing process
First light absorbing zone.
For step 3, can include：
Step 31, preparation chlorobenzene solution, and add the acetonitrile of the acetonitrile solution of lithium salts, tetra-tert pyridine and cobalt salt molten
Liquid, stirring at normal temperature forms Spiro-OMeTAD solution；
Step 32, the Spiro-OMeTAD solution drops to the first light absorbing zone surface and spin coating forms described
First hole transmission layer.
For step 4, can include：
Using Au materials as target, under an argon atmosphere, using magnetron sputtering technique, using the first mask plate described
First hole transport layer surface sputters Au materials as the source-drain electrode.Wherein, Au materials can also be replaced into Ag, Pt etc.
The metal of stable chemical nature, or can be using the metal of the low costs such as Al, Ti or Ni.
For step 5, can include：
Step 51, preparation chlorobenzene solution, and add the acetonitrile of the acetonitrile solution of lithium salts, tetra-tert pyridine and cobalt salt molten
Liquid, stirring at normal temperature forms Spiro-OMeTAD solution；
Step 52, the Spiro-OMeTAD solution is dropped to the source-drain electrode and is not covered by the source-drain electrode
The first hole transport layer surface and spin coating forming second hole transmission layer.
For step 6, can include：
Step 61, by PbI2And CH3NH3I successively adds DMSO:In GBL and stir, CH is formed after standing3NH3PbI3It is molten
Liquid；
Step 62, using single semar technique by the CH3NH3PbI3Solution is spin-coated on the second hole transport layer surface
And second light absorbing zone is formed by annealing process.
For step 7, can include：
Using Au materials as target, under an argon atmosphere, using magnetron sputtering technique, using the second mask plate described
Second light absorbing zone surface sputters Au materials as the gate electrode.Wherein, Au materials can also be replaced into the chemistry such as Ag, Pt
Metal stable in properties, or can be using the metal of the low costs such as Al, Ti or Ni.
The embodiment of the present invention, by using symmetrical light absorbing zone, can absorb more light and produce photo-generated carrier, enhancing
Device performance；In addition, as bottom gate electrode, can be realized using in the transparent FTO electro-conductive glass of transparent sapphire growth
Lower illumination can be irradiated to light absorbing zone, strengthen device performance；Again, using by CH3NH3PbI3Substantial amounts of sky is provided to raceway groove
Cave, forms two-way HHET, and high with mobility, switching speed is fast, and light absorbs enhancing, photo-generated carrier increases, and transmission characteristic increases
By force, the big advantage of photoelectric transformation efficiency.
Embodiment two
Please also refer to Fig. 4 a- Fig. 4 h and Fig. 5 and Fig. 6, Fig. 4 a- Fig. 4 h for one kind provided in an embodiment of the present invention is based on
CH3NH3PbI3The preparation method schematic diagram of the two-way HHET devices of p-type of material；Fig. 5 is provided in an embodiment of the present invention a kind of the
The structural representation of one mask plate；Fig. 6 is a kind of structural representation of second mask plate provided in an embodiment of the present invention.This implementation
Example on the basis of above-described embodiment, to of the invention based on CH3NH3PbI3The preparation method of the two-way HHET devices of p-type of material
It is described in detail as follows：
Step 1：Fig. 4 a are referred to, prepares sapphire Al2O3Substrate 1, thickness is 200 μm -600 μm.
Substrate selects sapphire Al2O3Reason：Because its is cheap, and good insulation preformance, effectively prevent two-way HHET
The longitudinal direction electric leakage of high hole mobility transistor.
Substrate can select 200 μm of SiO of 1 μm of -600 μm of silicon substrate thermal oxides2Substitute, but insulation effect is deteriorated after replacement,
And manufacturing process is increasingly complex.
Step 2：Fig. 4 b are referred to, FTO conduction glass is prepared using sol method in the Sapphire Substrate 1 that step 1 is prepared
Glass 2.Specifically, the thickness of the FTO electro-conductive glass can be 100~300nm.
5~16ml butyl titanates are added in 20~75ml redistilled waters, 3~5h of stirring reaction.By what is obtained
Precipitation filtering, is transferred in there-necked flask after cyclic washing, 100~300ml redistilled waters and 3ml concentrated nitric acids is added, in 60
~90 DEG C of 24~48h of stirring, that is, obtain transparent FTO colloidal sols.The FTO colloidal sols are applied in the Sapphire Substrate 1 and stand shape
Into FTO electro-conductive glass 2.
Step 3：Fig. 4 c are referred to, the spin coating CH on the FTO electro-conductive glass 2 prepared by step 23NH3PbI3Material light absorbs
Layer 3.
Using single spin-coating method on step 2 gained FTO electro-conductive glass spin coating CH3NH3PbI3Light absorbing zone 3, by 654mg
PbI2With the CH of 217mg3NH3I successively adds DMSO:In GBL, PbI is obtained2And CH3NH3The mixed solution of I；By PbI2With
CH3NH3The mixed solution of I is stirred two hours at 80 degrees celsius, the solution after being stirred；Solution after stirring is taken the photograph 80
Family name's degree stands 1 hour, obtains CH3NH3PbI3Solution；By CH3NH3PbI3Solution is added drop-wise on the electro-conductive glass of step 2 gained,
Annealed 20 minutes under 100 degrees Celsius, form CH3NH3PbI3Light absorbing zone, light absorbing zone thickness is 200~300nm.
Step 4：Fig. 4 d are referred to, the spin coating hole transmission layer Spiro-OMeTAD materials on light absorbing zone 3.
Compound concentration is the chlorobenzene solution of the Spiro-OMeTAD of 72.3mg/mL, adds the acetonitrile of 520mg/mL lithium salts molten
The acetonitrile solution of liquid, tetra-tert pyridine and 300mg/mL cobalt salts, three's volume ratio is 10:17:11, stirring at normal temperature 1h, obtain final product
To Spiro-OMeTAD solution；Spiro-OMeTAD solution is added drop-wise on prepared light absorbing zone 3, spin coating is then carried out,
Spiro-OMeTAD hole transmission layers 4 are obtained, transport layer thickness is 50-200nm.
Step 5：Fig. 4 e and Fig. 5 are referred to, using the first mask plate, magnetron sputtering is using golden material on hole transmission layer 4
Expect the source-drain electrode 5 for preparing.
Sputtering target material compares purity from quality>99.99% gold, using Ar that mass percent purity is 99.999% as
Sputter gas are passed through sputtering chamber, before sputtering, magnetron sputtering apparatus cavity are carried out with high-purity argon gas cleaning within 5 minutes, then take out true
It is empty.It is 6 × 10 in vacuum-4-1.3×10-3Pa, argon flow amount are 20-30cm3/ second, target cardinal distance are 10cm and operating power
Under conditions of for 20W-100W, source-drain electrode gold is prepared, thickness of electrode is 100nm-300nm.
Source-drain electrode 5 can select Al Ti Ni Ag the metal substitute such as Pt.Wherein Au Ag Pt stable chemical natures；Al\
Ti Ni low costs.
Step 6：Fig. 4 f are referred to, the spin coating Spiro- on source-drain electrode 5 and Spiro-OMeTAD hole transmission layers 4
OMeTAD materials.
Compound concentration is the chlorobenzene solution of the Spiro-OMeTAD of 72.3mg/mL, adds the acetonitrile of 520mg/mL lithium salts molten
The acetonitrile solution of liquid, tetra-tert pyridine and 300mg/mL cobalt salts, three's volume ratio is 10:17:11, stirring at normal temperature 1h, obtain final product
To Spiro-OMeTAD solution；Spiro-OMeTAD solution is added drop-wise on prepared hole transmission layer 4 and source-drain electrode 5,
Then spin coating is carried out, that is, obtains Spiro-OMeTAD hole transmission layers 6, transport layer thickness is 50-200nm.
Step 7：Fig. 4 g are referred to, the spin coating CH on Spiro-OMeTAD hole transmission layers 63NH3PbI3The light absorbs of material
Layer 7.
Using single spin-coating method on step 7 gained Spiro-OMeTAD hole transmission layers 6 spin coating CH3NH3PbI3Light absorbs
Layer.Specifically, by the PbI of 654mg2With the CH of 217mg3NH3I successively adds DMSO:In GBL, PbI is obtained2And CH3NH3I's is mixed
Close solution；By PbI2And CH3NH3The mixed solution of I is stirred two hours at 80 degrees celsius, the solution after being stirred；Will stirring
Solution afterwards stands 1 hour at 80 degrees Celsius, obtains CH3NH3PbI3Solution；By CH3NH3PbI3Solution is added drop-wise to step 6 gained
Spiro-OMeTAD hole transmission layers 6 on, under 100 degrees Celsius anneal 20 minutes, formed CH3NH3PbI3Light absorbing zone, light
Absorber thickness is 200-300nm.
Step 8：Fig. 4 h and Fig. 6 are referred to, using the second mask plate, in CH3NH3PbI3Magnetron sputtering gold on light absorbing zone 7
The gate electrode 8 of material.
Using magnetron sputtering technique in step 7 gained light absorbing zone CH3NH3PbI3Upper magnetron sputtering gate electrode gold material, splashes
Material of shooting at the target compares purity from quality>99.99% gold, is led to using the Ar that mass percent purity is 99.999% as sputter gas
Enter sputtering chamber, before sputtering, magnetron sputtering apparatus cavity is carried out with high-purity argon gas cleaning within 5 minutes, then vacuumize.In vacuum
It is 6 × 10-4-1.3×10-3Pa, argon flow amount are 20-30cm3/ second, target cardinal distance are 10cm and operating power is 20W-100W
Under conditions of, gate electrode gold is prepared, thickness of electrode is 100nm-300nm.
Gate electrode 8 can select Al Ti Ni Ag the metal substitute such as Pt.Wherein Au Ag Pt stable chemical natures；Al\Ti\
Ni low costs.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
Specific implementation of the invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should be all considered as belonging to of the invention
Protection domain.
Claims (10)
1. it is a kind of to be based on CH3NH3PbI3The preparation method of the two-way HHET devices of p-type of material, it is characterised in that including：
FTO electro-conductive glass is made in the substrate material surface chosen；
The first light absorbing zone is made in the FTO conductive glass surfaces；
The first hole transmission layer is made on the first light absorbing zone surface；
Source-drain electrode is made in the first hole transport layer surface；
The second hole transmission layer is made in whole substrate surface；
The second light absorbing zone is prepared in the second hole transport layer surface；
Gate electrode is made on the second light absorbing zone surface, the two-way HHET devices are ultimately formed.
2. method according to claim 1, it is characterised in that make electro-conductive glass in the substrate material surface chosen thin
Film, including：
Choose Al2O3Material is used as the backing material；
In the Al2O3Material surface makes the FTO electro-conductive glass.
3. method according to claim 1, it is characterised in that in the Al2O3Material surface makes the FTO conductions glass
Glass, including：
Sediment is obtained after butyl titanate is added into redistilled water into stirring；
The substrate surface is applied to shape after being stirred in the mixed liquor that the sediment is added redistilled water and concentrated nitric acid
Into the FTO electro-conductive glass.
4. method according to claim 1, it is characterised in that make the first light absorbs in the FTO conductive glass surfaces
Layer, including：
By PbI2And CH3NH3I successively adds DMSO:In GBL and stir, CH is formed after standing3NH3PbI3Solution；
By the CH3NH3PbI3Solution is spin-coated on the FTO conductive glass surfaces and forms first light by annealing process
Absorbed layer.
5. method according to claim 1, it is characterised in that make the first hole on the first light absorbing zone surface and pass
Defeated layer, including：
Preparation chlorobenzene solution, and add the acetonitrile solution of the acetonitrile solution of lithium salts, tetra-tert pyridine and cobalt salt, stirring at normal temperature shape
Into Spiro-OMeTAD solution；
The Spiro-OMeTAD solution is dropped into the first light absorbing zone surface and spin coating forms first hole and passes
Defeated layer.
6. method according to claim 1, it is characterised in that make source and drain electricity in the first hole transport layer surface
Pole, including：
Using Au materials as target, under an argon atmosphere, using magnetron sputtering technique, using the first mask plate described first
Hole transport layer surface sputters Au materials as the source-drain electrode.
7. method according to claim 1, it is characterised in that make the second hole transmission layer, bag in whole substrate surface
Include：
Preparation chlorobenzene solution, and add the acetonitrile solution of the acetonitrile solution of lithium salts, tetra-tert pyridine and cobalt salt, stirring at normal temperature shape
Into Spiro-OMeTAD solution；
The Spiro-OMeTAD solution is dropped into the source-drain electrode and do not covered by the source-drain electrode described first
Hole transport layer surface and spin coating are forming second hole transmission layer.
8. method according to claim 1, it is characterised in that prepare the second light in the second hole transport layer surface and inhale
Layer is received, including：
By PbI2And CH3NH3I successively adds DMSO:In GBL and stir, CH is formed after standing3NH3PbI3Solution；
Using single semar technique by the CH3NH3PbI3Solution is spin-coated on the second hole transport layer surface and by lehr attendant
Skill forms second light absorbing zone.
9. method according to claim 1, it is characterised in that make gate electrode, bag on the second light absorbing zone surface
Include：
Using Au materials as target, under an argon atmosphere, using magnetron sputtering technique, using the second mask plate described second
Light absorbing zone surface sputters Au materials as the gate electrode.
10. it is a kind of to be based on CH3NH3PbI3The two-way HHET devices of p-type of material, it is characterised in that the two-way HHET devices are by weighing
Profit requires that the method described in any one of 1-9 prepares to be formed.
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| CN201710074139.4A CN106876489B (en) | 2017-02-10 | 2017-02-10 | Based on CH3NH3PbI3Two-way HHET device of the p-type of material and preparation method thereof |
| PCT/CN2017/114674 WO2018103646A1 (en) | 2016-12-08 | 2017-12-05 | Ch3nh3pbi3 material-based method for fabricating hemt/hhmt device |
| US16/120,244 US10332691B2 (en) | 2016-12-08 | 2018-09-01 | Method for manufacturing HEMT/HHMT device based on CH3NH3PbI3 material |
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| WO2018103646A1 (en) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Ch3nh3pbi3 material-based method for fabricating hemt/hhmt device |
| CN108987575A (en) * | 2018-06-07 | 2018-12-11 | 西安电子科技大学 | A kind of stack gate perovskite field effect transistor and preparation method thereof |
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| US20060065910A1 (en) * | 2000-04-11 | 2006-03-30 | Zoltan Ring | Method of forming vias in silicon carbide and resulting devices and circuits |
| CN102339955A (en) * | 2011-10-09 | 2012-02-01 | 北京理工大学 | Resonant tunneling organic light-emitting diode and preparation method thereof |
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| US20060065910A1 (en) * | 2000-04-11 | 2006-03-30 | Zoltan Ring | Method of forming vias in silicon carbide and resulting devices and circuits |
| CN102339955A (en) * | 2011-10-09 | 2012-02-01 | 北京理工大学 | Resonant tunneling organic light-emitting diode and preparation method thereof |
| CN104900745A (en) * | 2015-05-26 | 2015-09-09 | 北京工业大学 | Spectrum detector based on high electron mobility transistor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018103646A1 (en) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Ch3nh3pbi3 material-based method for fabricating hemt/hhmt device |
| CN108987575A (en) * | 2018-06-07 | 2018-12-11 | 西安电子科技大学 | A kind of stack gate perovskite field effect transistor and preparation method thereof |
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