CN106876444B - HEMT device based on multicycle quantum well structure - Google Patents

HEMT device based on multicycle quantum well structure Download PDF

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CN106876444B
CN106876444B CN201710126246.7A CN201710126246A CN106876444B CN 106876444 B CN106876444 B CN 106876444B CN 201710126246 A CN201710126246 A CN 201710126246A CN 106876444 B CN106876444 B CN 106876444B
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layer
hemt
quantum well
active layer
mqw active
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CN201710126246.7A
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CN106876444A (en
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杨春
宋振杰
贾少鹏
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东南大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices

Abstract

The invention discloses a kind of HEMT device based on multicycle quantum well structure, including substrate, grown buffer layer on substrate, grown quantum trap active layer on buffer layer;Mqw active layer includes: barrier layer, separation layer, channel layer and defect layer;Source electrode, drain and gate are set on mqw active layer, and grid is located at the centre of mqw active layer, and source electrode and drain electrode is located at the two sides of mqw active layer.The present invention rapidly switches off device by introducing defect layer trapped electron;By growing multicycle quantum well heterojunction, multiple conductive channel layers are generated, the power handling capability of device is increased;By using mesa structure, internal electric field buckling problem caused by conventional surface electrode is effectively solved, leakage, source voltage indiscriminate can be loaded into multicycle hetero-junctions both ends;The successful research and development of the device will be such that HEMT device develops to higher frequency, high speed, high-power field.

Description

HEMT device based on multicycle quantum well structure

Technical field

The invention belongs to technical field of semiconductors more particularly to a kind of HEMT devices based on multicycle quantum well structure.

Background technique

HEMT (High Electron Mobility Transistor), high electron mobility transistor are a kind of heterogeneous Junction field effect transistor can operate at hyperfrequency (millimeter wave), ultrahigh speed field.Since InP material has high saturated electrons The HEMT of mobility, high breakdown electric field, good thermal conductivity, the Lattice Matching HEMT of InP-base, performance ratio GaAs base is more excellent More, as the preparation of InP monocrystalline makes progress, the HEMT performance of InP-base is also greatly improved.

Compared to the HEMT of GaAs base, the HEMT of InP-base have higher transfer efficiency, working frequency, output power and The characteristics such as low noise, so that it has important application at high frequency, high speed, high-power aspect.Under the HEMT room temperature 300K of InP-base, In0.52Al0.48The forbidden bandwidth of As is 1.47eV, In0.53Ga0.47The forbidden bandwidth of As is 0.74eV, the two conduction level difference 0.44eV has biggish conduction band discontinuity.Thus, can produce in InGaAs channel high mobility, high concentration two Dimensional electron gas makes InP-base HEMT device keep high frequency, high speed, powerful performance.

Currently, people have designed the HEMT that can be used for terahertz wave band work using InGaAs/InAlAs hetero-junctions Active area structure, the fields such as generation, detection applied to Terahertz.But the HEMT of conventional InGaAs/InAlAs is generally existing The limited problem of heterojunction boundary two-dimensional electron gas surface density, causes device current processing capacity limited.Moreover, because carrier It lasts a long time, causes HEMT that can not rapidly switch off.The problem of conventional surface electrode is bent there is also internal electric field.Therefore, such as What solves above-mentioned deficiency and has become those skilled in the art's technical task urgently to be resolved by rationally designing active area structure.

Summary of the invention

Goal of the invention: in view of the above problems, the present invention proposes a kind of HEMT device based on multicycle quantum well structure.

Technical solution: to achieve the purpose of the present invention, the technical scheme adopted by the invention is that: one kind is measured based on the multicycle The HEMT device of sub- well structure, including substrate, grown buffer layer on substrate, grown quantum trap active layer on buffer layer.Wherein, it measures Sub- trap active layer includes: barrier layer, separation layer, channel layer and defect layer.Source electrode, drain electrode and grid are set on mqw active layer Pole, grid are located at the centre of mqw active layer, and source electrode and drain electrode is located at the two sides of mqw active layer.

Barrier layer, separation layer, defect layer and buffer layer material be InAlAs, the material of channel layer is InGaAs.Potential barrier Layer, separation layer, defect layer and buffer layer material be AlGaN, the material of channel layer is GaN.

Further, barrier layer, separation layer, channel layer, defect layer are identical with buffering slice width degree, and the width of substrate is greater than upper The width of each layer is stated, two sides are respectively formed mesa structure.Grid is located at the top of mqw active layer, and source electrode and drain electrode are located at Quantum Well The mesa structure of active layer two sides.

Further, the channel layer for n sequential organization being set on mqw active layer and constituting, and each channel layer is At equal intervals.

Further, four layers of mqw active layer, barrier layer, separation layer, channel layer and defect layer can be from top to bottom It is arranged successively, can also be arranged successively from bottom to top.

The utility model has the advantages that HEMT device of the invention is by introducing defect layer trapped electron, it is quick when turning off device Shutdown;By growing multicycle quantum well heterojunction, multiple conductive channel layers are generated, it is made to break through the growth of critical thickness and list The limited limitation of heterojunction boundary two-dimensional electron gas, increases device current, power handling capability;By using table top knot Structure makes source electrode, drain electrode be located at the two sides of multicycle hetero-junctions, effectively solves internal electric field caused by conventional upper surface electrode Buckling problem, leakage, source voltage indiscriminate can be loaded into multicycle hetero-junctions both ends;The successful research and development of the device will make HEMT Device develops to higher frequency, high speed, high-power field.

Detailed description of the invention

Fig. 1 is the schematic diagram of HEMT device in embodiment 1;

Fig. 2 is the schematic diagram of HEMT device in embodiment 2;

Fig. 3 is the schematic diagram of HEMT device in embodiment 3;

Fig. 4 is the schematic diagram of HEMT device in embodiment 4.

Specific embodiment

Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.

Embodiment 1

As shown in Figure 1, the HEMT device based on multicycle quantum well structure, using semi-insulating InP material as substrate 9, The buffer layer 8 of Lattice Matching is grown on substrate 9, is mqw active layer on buffer layer 8.Mqw active layer from top to down according to Secondary includes: barrier layer 1, separation layer 2, channel layer 3 and defect layer 4.Source electrode 5, drain electrode 6 and grid 7 are set on mqw active layer, Source electrode 5 and drain electrode 6 are Ohmic contact.Grid 7 is located at the centre of active layer, and source electrode 5 and drain electrode 6 are located at the two sides of active layer.

The material of barrier layer 1, separation layer 2 and defect layer 4 and buffer layer 8 can be selected as InAlAs, while channel layer 3 Material is InGaAs.AlGaN, while ditch also can be used in the material of barrier layer 1, separation layer 2 and defect layer 4 and buffer layer 8 The material of channel layer 3 selects GaN.

HEMT device of the invention can also use semiconductor III-VI race some other material, such as GaAs, InGaN, AlN, InAlN, GaNAsSb etc..

Barrier layer 1 is the barrier layer of δ doping, and δ-doping is 2 × 1012/cm-2.Barrier layer 1 with a thickness of 2~ 15nm.Separation layer 2 with a thickness of 2~5nm.The growth temperature range of channel layer 3 is 400~500 DEG C, with a thickness of 4~15nm.It lacks The growth temperature range for falling into layer 4 is 300~500 DEG C, with a thickness of 4~15nm.Buffer layer 8 is grown in semi-insulating using epitaxy method In InP material substrate 9, and 9 Lattice Matching of InP substrate, with a thickness of 200nm.

When break-over of device, two-dimensional electron gas is predominantly located at the interface of separation layer 2 Yu channel layer 3, and defect layer 4 is to Two-dimensional electron The transport property of gas influences very little.Work as Applied gate voltages, two-dimensional electron gas wave function is shifted into defect layer 4, in defect layer 4 High density Deep Level Traps trapped electron, in the service life of electronics, keep HEMT device fast when greatly reducing HEMT device shutdown Speed shutdown.

Embodiment 2

As shown in Fig. 2, barrier layer 1, separation layer 2, channel layer 3, defect layer 4 and buffer layer 8 are of same size, the width of substrate 9 Degree is greater than the width of above layers, is respectively formed mesa structure in two sides, electrode and mqw active layer are connected to the mesa structure On.Grid 7 is located at the top of mqw active layer, and source electrode 5 and drain electrode 6 are " L " type, positioned at the two sides of mesa structure.

The electrode of mesa structure can effectively solve the problem that internal electric field buckling problem caused by conventional surface electrode, leakage, source Voltage indiscriminate can be loaded into multi-heterostructure-layers both ends, increase the electric field component of leakage, source horizontal direction, keep electronics fast Speed passes through conducting channel.Further increase the ability that InP-base HEMT device is applied in terms of high frequency, high speed, high-power field.

Embodiment 3

As shown in figure 3, n sequential organization is arranged again and the channel layer that constitutes in the upper layer of barrier layer 1 in mqw active layer, The material of channel layer is InGaAs or GaN.And each channel layer is equidistant.N can be 100.

Multicycle quantum well structure possesses more two-dimensional electron gas conductive channels, compares single quantum, improves Device handles high current, the ability of high-power signal.

Embodiment 4

As shown in figure 4, mqw active layer is from top to down successively are as follows: defect layer 4, channel layer 3, separation layer 2 and barrier layer 1.Succession is with embodiment 3 on the contrary, other structures are same as Example 3.

In all embodiments of the invention, source electrode 5 and drain electrode 6 generally use metal alloy, there are commonly Ti/Al/Ni/Au or Mo/Al/MoAu.Grid 7 generally uses the biggish metal alloy of work function, such as Ni/Au or Ti/Au.

Claims (6)

1. a kind of HEMT device based on multicycle quantum well structure, it is characterised in that: including substrate (9), substrate is grown on (9) Buffer layer (8), grown quantum trap active layer on buffer layer (8);Wherein, mqw active layer includes: barrier layer (1), separation layer (2), channel layer (3) and defect layer (4);Source electrode (5), drain electrode (6) and grid (7), grid (7) position are set on mqw active layer In the centre of mqw active layer, source electrode (5) and drain electrode (6) are located at the two sides of mqw active layer;
Barrier layer (1), separation layer (2), channel layer (3), defect layer (4) and buffer layer (8) are of same size, the width of substrate (9) Greater than the width of above layers, two sides are respectively formed mesa structure;Grid (7) is located at the top of mqw active layer, source electrode (5) and leakage Pole (6) is located at the mesa structure of mqw active layer two sides;
The channel layer that n sequential organization is set on mqw active layer and is constituted, and each channel layer is equidistant.
2. the HEMT device according to claim 1 based on multicycle quantum well structure, it is characterised in that: barrier layer (1), The material of separation layer (2), defect layer (4) and buffer layer (8) is InAlAs, and the material of channel layer (3) is InGaAs.
3. the HEMT device according to claim 1 based on multicycle quantum well structure, it is characterised in that: barrier layer (1), The material of separation layer (2), defect layer (4) and buffer layer (8) is AlGaN, and the material of channel layer (3) is GaN.
4. the HEMT device according to claim 1 based on multicycle quantum well structure, it is characterised in that: Quantum Well is active Layer is from top to down successively are as follows: barrier layer (1), separation layer (2), channel layer (3) and defect layer (4).
5. the HEMT device according to claim 1 based on multicycle quantum well structure, it is characterised in that: Quantum Well is active Layer is from top to down successively are as follows: defect layer (4), channel layer (3), separation layer (2) and barrier layer (1).
6. the HEMT device according to claim 1 based on multicycle quantum well structure, it is characterised in that: barrier layer (1) With a thickness of 2~15nm;Separation layer (2) with a thickness of 2~5nm;The growth temperature range of channel layer (3) is 400~500 DEG C, With a thickness of 4~15nm;The growth temperature range of defect layer (4) is 300~500 DEG C, with a thickness of 4~15nm.
CN201710126246.7A 2017-03-03 2017-03-03 HEMT device based on multicycle quantum well structure CN106876444B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787820B2 (en) * 2001-03-27 2004-09-07 Matsushita Electric Industrial Co., Ltd. Hetero-junction field effect transistor having an InGaAIN cap film
CN102629624A (en) * 2012-04-29 2012-08-08 西安电子科技大学 Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
CN102903738A (en) * 2012-09-06 2013-01-30 程凯 III-series nitride semiconductor device and manufacturing method thereof
CN105280696A (en) * 2015-11-27 2016-01-27 西安电子科技大学 AlGaN/GaN high electron mobility transistor with multi-channel fin-type structure
CN106252403A (en) * 2016-08-29 2016-12-21 中国科学院半导体研究所 A kind of HEMT epitaxial structure and preparation method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787820B2 (en) * 2001-03-27 2004-09-07 Matsushita Electric Industrial Co., Ltd. Hetero-junction field effect transistor having an InGaAIN cap film
CN102629624A (en) * 2012-04-29 2012-08-08 西安电子科技大学 Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
CN102903738A (en) * 2012-09-06 2013-01-30 程凯 III-series nitride semiconductor device and manufacturing method thereof
CN105280696A (en) * 2015-11-27 2016-01-27 西安电子科技大学 AlGaN/GaN high electron mobility transistor with multi-channel fin-type structure
CN106252403A (en) * 2016-08-29 2016-12-21 中国科学院半导体研究所 A kind of HEMT epitaxial structure and preparation method

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