CN106841989A - A kind of cmos sensor method of testing - Google Patents
A kind of cmos sensor method of testing Download PDFInfo
- Publication number
- CN106841989A CN106841989A CN201710075470.8A CN201710075470A CN106841989A CN 106841989 A CN106841989 A CN 106841989A CN 201710075470 A CN201710075470 A CN 201710075470A CN 106841989 A CN106841989 A CN 106841989A
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- cmos sensor
- pin
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- test
- power supply
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2894—Aspects of quality control [QC]
Abstract
The present invention relates to a kind of cmos sensor method of testing, the picture quality that can not be tested automatically under various illumination conditions present in prior art is mainly solved, it is impossible to the technical problem tested leaky.The present invention by using for gathered data data acquisition device and with the software platform for controlling the data acquisition device statistical test total quantity and all kinds of bad quantity, data acquisition device includes cmos sensor to be measured, open-short circuit module, the graphics test module being connected with open-short circuit module, the technical scheme of leakage testses module and system power supply module, the problem is preferably resolved, be can be used in the industrial production of cmos sensor.
Description
Technical field
The present invention relates to integrated circuit testing field, a kind of cmos sensor test system and test side are related specifically to
Method.
Background technology
Because cmos sensor is image acquiring sensor, last inspection together is carried out per chips before dispatching from the factory, must
All related defective products must be screened, and classification statistics is carried out to defective products, which chip can be positioned by not good figure
The problem of fab is belonging to, whether which belongs to the problem of encapsulation factory, further navigates to and defective designs on oneself circuit.
There is test by the image measurement system controlled using FPGA in existing cmos sensor test system and method
Classification is single, it is impossible to which the 0/S of automatic comprehensively test cmos sensor is bad, it is impossible to enough test images under various illumination
Can, it is impossible to carry out cmos sensor leakage testses, and the technical problem that bad classification can not be carried out.Therefore it provides excessively a kind of
Image property test can either be carried out and the test system of cmos sensor pin open-short circuit and leakage testses can be carried out
With regard to necessary.
The content of the invention
The present invention solves the technical problem of can not comprehensively test cmos sensor automatically in the prior art
It is bad, it is impossible to classify to bad.The present invention can either carry out image property test and can carry out by providing one kind
The test system of cmos sensor pin open-short circuit and leakage testses.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
A kind of cmos sensor test system, the test system includes：Data acquisition device for gathered data and
For the host computer of statistical analysis test result；
The data acquisition device includes cmos sensor to be measured, and image processor is connected with described image processor
Switch selection circuit module and open-short circuit module, the graphics test module being connected with the open-short circuit module, leakage
Electrical testing module and system power supply module；
Described image processor is used to control the switch selection circuit module, open-short circuit module, graphics test mould
Block, leakage testses module and system power supply module；
The switch selection circuit module is used to control the cmos sensor；
The open-short circuit module is used to test between the Pin pin of cmos sensor and power supply Pin to open short-circuit conditions,
Pin pin and opening for ground Pin open short-circuit conditions between short-circuit conditions and power supply Pin and ground Pin；
Described image test module is used to test image property of the cmos sensor under different illumination conditions；
The leakage testses module is used to test the drain conditions of cmos sensor；
The system power supply module is used for the cmos sensor, and image processor, switch selection circuit module opens short circuit
Test module, the power supply of graphics test module and leakage testses module.
It is optimization in such scheme, further, the open-short circuit module includes being connected with described image processor
Constant-current source and ADC, the constant-current source and ADC are also connected with the switch selection circuit module；
The constant-current source is used to export positive constant current and negative constant current；
The ADC is used to measure the voltage swing on the cmos sensor.
Further, described image test module includes the light source module being connected with image processor and MIPI bridge joint moulds
Block；
The light source module is used to provide different intensities of illumination；
The MIPI bridge modules are used to provide MIPI signals.
Further, the different illumination intensity that the light source module is provided is three kinds.
Further, the leakage testses module includes the testing current module being connected with described image processor；
The testing current module is used to test drain conditions on the cmos sensor.
The present invention also provides a kind of method of testing of cmos sensor test system, the described method comprises the following steps：
(1) connecting test system；
(2) sent by the host computer and instructed, carry out cmos sensor open-short circuit, carry out out poor short circuit point
Class；
(3) sent by the host computer and instructed, carry out the image measurement of cmos sensor, carry out the bad classification of image；
(4) predetermined current threshold, is sent by the host computer and instructed, and carries out the leakage testses of cmos sensor, is passed through
Processor is in PWDN states by cmos sensor, and electric current Ip on test cmos sensor power supply Pin, Ip is more than the current threshold
During value, it is judged as that electric leakage is bad；
(5) the test system programming count cmos sensor total number measured amount and each bad quantity；
(7) test system outputs test result and statistics automatically, the programming count output number of stoppages, exports lattice
Formula is Excel statement forms.
It is optimization in such scheme, further, the step (2) includes：
A () host computer sends open-short circuit instruction, imageing sensor instructs the controlling switch according to open-short circuit
Selection circuit module, disconnects cmos sensor and MIPI bridge modules, sets cmos sensor power supply Pin and is set to 0V；
B electric current that () constant-current source exports+100uA gives cmos sensor Pin to be measured, is tested on the Pin by ADC
Pin voltages to be measured, Pin voltages V1 to be measured judges the Pin to be measured and cmos sensor power supply Pin short circuits, Pin electricity to be measured when being 0V
Pressure V1 judges that the Pin to be measured and cmos sensor power supply Pin opens a way more than 5V；
C electric current that () constant-current source exports -100uA is tested on the Pin to cmos sensor Pin to be measured by ADC
Pin voltages to be measured, Pin voltages V2 to be measured judges the Pin to be measured with the Pin short circuits of cmos sensor ground, Pin voltages V2 to be measured for 0V
Judge that the Pin to be measured opens a way with cmos sensor ground Pin less than -5V；
D () more emat sensor Pin to be measured successively, repeat step (b)-step (c), cmos sensor Pin is changed after finishing
Into step (e)；
E () controls the switch selection circuit module, by cmos sensor except all of Pin ground connection, the constant-current source to
Power supply Pin is input into the electric current of -100uA, and the voltage of power supply Pin is tested by ADC, and power supply Pin voltages are electricity when V3 is 0V
Source Pin and ground Pin short circuits.
Further, the step (3) includes：
(A) image processor controlling switch selection circuit is connected with cmos sensor, and cmos sensor is read by I2C methods
No. ID；
(B) parameter initialization is carried out to cmos sensor；
(C) intensity of illumination is set by light source module；
(D) image measurement is carried out to cmos sensor parallel port view data；
(E) by light source module setting normally, dark-state and completely black intensity of illumination, repeat step (D)-(E).
Further, parallel port view data also includes being initialized by image processor starting MIPI in the step (D)
Bridge module, the parallel port view data that described MIPI bridge modules decoding MIPI mouthfuls of data of cmos sensor are obtained.
Further, described image test includes that dead pixel points of images is tested, image smear test, image bad row, bad row test
And image color cast test.
The present invention is given by software platform and the cooperation of data acquisition device by data acquisition device gathered data
Position machine, host computer is used as by PC, carries out image quality test, and can export Excel forms that test data is carried out not
Good classification.
To sum up, beneficial effects of the present invention,
Effect one, by the quality of test of heuristics image and can carry out bad classification under three kinds of different illumination；
Effect two, can automatically test leaky；
Effect three, eliminates electricity leakage power dissipation；
Effect four, being capable of automatic statistical analysis data.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 apparatus of the present invention structured flowcharts.
The principle schematic of Fig. 2 open-short circuits of the present invention.
Fig. 3 method of testing flow charts of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Fig. 1 clearly illustrates the structured flowchart of test system of the present invention.The original of Fig. 3 open-short circuits of the present invention
Reason schematic diagram, wherein diode are positive voltage conducting, negative voltage cut-off.Fig. 2 is detailed to be illustrated the step of listing method of testing
Figure.
Embodiment 1
As Fig. 1, the present invention provide a kind of cmos sensor test system, the test system includes：For gathered data
Data acquisition device and the host computer for statistical analysis test result, host computer uses PC；The data acquisition device
Including cmos sensor to be measured, image processor and opens short at the switch selection circuit module being connected with described image processor
Road test module, the graphics test module being connected with the open-short circuit module, leakage testses module and system power supply module；
Described image processor is used to control the switch selection circuit module, and open-short circuit module, graphics test module, electric leakage is surveyed
Die trial block and system power supply module；The switch selection circuit module is used to control the cmos sensor；It is described to open short-circuit survey
Die trial block is used to test to open short-circuit conditions between the Pin pin of cmos sensor and power supply Pin, and Pin pin open short-circuit feelings with ground Pin's
Short-circuit conditions are opened between condition and power supply Pin and ground Pin；Described image test module is used to test cmos sensor in difference
Image property under illumination condition；The leakage testses module is used to test the drain conditions of cmos sensor；The system electricity
Source module is used for the cmos sensor, image processor, switch selection circuit module, open-short circuit module, graphics test
The power supply of module and leakage testses module.
The open-short circuit module includes the constant-current source and ADC that are connected with described image processor, the constant current
Source and ADC are also connected with the switch selection circuit module；The constant-current source is used to export positive constant current and bears constant
Electric current；The ADC is used to measure the voltage swing on the cmos sensor.Described image test module includes and image
The light source module and MIPI bridge modules of processor connection；The light source module is used to provide 3 kinds of different intensities of illumination；It is described
MIPI bridge modules are used to provide MIPI signals.The leakage testses module includes that the electric current being connected with described image processor is surveyed
Die trial block；The testing current module is used to test drain conditions on the cmos sensor.
A kind of method of testing of the cmos sensor test system described in the present embodiment, comprises the following steps：
(1) connecting test system；
(2) sent by the PC and instructed, carry out cmos sensor open-short circuit, carry out out poor short circuit classification：
A () PC sends open-short circuit instruction, imageing sensor instructs the controlling switch choosing according to open-short circuit
Circuit module is selected, cmos sensor and MIPI bridge modules is disconnected, cmos sensor power supply Pin is set and is set to 0V；
B electric current that () constant-current source exports+100uA gives cmos sensor Pin to be measured, is tested on the Pin by ADC
Pin voltages to be measured, because the forward voltage drop of diode is about 0.7V, under normal circumstances, Pin voltages V1 to be measured is about 0.7V；
If Pin to be measured and power supply Pin opens a way, Pin voltages V1 approach infinities to be measured, such as Pin to be measured and power supply Pin short circuits, then
Close to 0V, the Pin to be measured and cmos sensor power supply Pin's Pin voltages V1 opens a way；
C the principle of () similar step (b), the electric current that constant-current source exports -100uA passes through ADC to cmos sensor Pin to be measured
Pin voltages to be measured on the module testing Pin, under normal condition, Pin voltages V2 to be measured is about -0.7V, Pin voltages V2 to be measured
Close to the 0V then Pin to be measured and cmos sensor ground Pin short circuits, Pin voltages V2 approach infinities to be measured then the Pin to be measured with
Cmos sensor ground Pin open circuits；
D () more emat sensor Pin to be measured successively, repeat step (b)-step (c), replacing enters step (e) after finishing；
E () controls the switch selection circuit module, all Pin ground connection by cmos sensor in addition to power supply Pin, described
Constant-current source is input into the electric current of -100uA to power supply Pin, and the voltage of power supply Pin is tested by ADC, and power supply Pin voltages are V3
Power supply Pin and ground Pin short circuits during for 0V.So far, open-short circuit is completed, either step breaks down and then unites in open-short circuit
One is classified as out poor short circuit, bad also known as Openshor；
(3) sent by the PC and instructed, carry out the image measurement of cmos sensor, carry out the bad classification of image：
(A) image processor controlling switch selection circuit is connected with cmos sensor, and cmos sensor is read by I2C methods
No. ID；
(B) carry out parameter initialization to cmos sensor, whether Telemetry bar, i.e. Colorbar normal, it is abnormal then
It is classified as Colorbar bad；
(C) intensity of illumination is set by light source module, normal illumination state is set, judge present intensity whether in normal shape
In state, also known as in Normal state ranges；
(D) image measurement is carried out to cmos sensor parallel port view data；Image measurement includes that the image for carrying out successively is bad
Point test, image smear test, image bad row, bad row test and image color cast test are classified as bad respectively according to test result
Point is bad, and weak stain is bad, and it is bad that bad row/evil idea arranges bad and colour cast.
(E) intensity of illumination is set by light source module, setting illumination is dark-state, judges whether present intensity belongs to dark-state model
Enclose, carry out image measurement to cmos sensor parallel port view data, including dead pixel points of images test, image bad row, bad row test and
Image color cast is tested, and it is bad to classify as half-light bad point respectively according to test result, and half-light bad row/evil idea arranges bad.
(F) intensity of illumination is set by light source module, setting illumination is full black state, judges whether present intensity belongs to complete
Black scope, also known as Dark scopes, image measurement is carried out to cmos sensor parallel port view data, there is completely black when judging current
Point, also known as Dark points, has, classify as it is completely black bad, it is bad also known as Dark.
(4) predetermined current threshold, is sent by the host computer and instructed, and carries out the leakage testses of cmos sensor, is passed through
Processor is in PWDN states by cmos sensor, and electric current on test cmos sensor power supply Pin is designated as Ip, and Ip is more than described
During current threshold, electric leakage is classified as bad.
(5) after the completion of foregoing test, bad cmos sensor is not categorized as, classifies as non-defective unit.The test system
System programming count cmos sensor total number measured amount and each bad quantity.
(6) test system outputs test result and statistics automatically, the programming count output number of stoppages, exports lattice
Formula is Excel statement forms；Form content is comprising test cmos sensor is total, each badness sum, the ratio of each badness
And system cut-off number of times.
Embodiment 2
The present embodiment is further illustrated on the basis of embodiment 1, and cmos sensor has the test under MIPI interface cases
Method, step (3) includes：
(3) sent by the PC and instructed, carry out the image measurement of cmos sensor, carry out the bad classification of image：
(A) image processor controlling switch selection circuit is connected with cmos sensor, and cmos sensor is read by I2C methods
No. ID；
(B) carry out parameter initialization to cmos sensor, whether Telemetry bar, i.e. Colorbar normal, it is abnormal then
It is classified as Colorbar bad；
(C) intensity of illumination is set by light source module, normal illumination state is set, judge present intensity whether in normal shape
In state, also known as in Normal state ranges；
(D) the parallel port view data to the output of cmos sensor parallel port carries out image measurement；It is initial by image processor
Change and start MIPI bridge modules, the parallel port view data that MIPI bridge modules decoding MIPI mouthfuls of data of cmos sensor are obtained；Will
Foregoing two kinds of parallel port data carry out image measurement, and image measurement includes the dead pixel points of images test for carrying out successively, and image smear is tested,
Image bad row, bad row test and image color cast test, classify as that bad point is bad according to test result respectively, and weak stain is bad, bad
Row/bad and colour cast of bad row is bad；
(E) intensity of illumination is set by light source module, setting illumination is dark-state, judges whether present intensity belongs to dark-state model
Enclose, two kinds of parallel port view data to cmos sensor carry out image measurement；Including the dead pixel points of images test for carrying out successively, image
Bad row, bad row test and image color cast test, classify as that half-light bad point is bad according to test result respectively, and half-light bad row/evil idea is arranged
It is bad；
(F) intensity of illumination is set by light source module, setting illumination is full black state, also known as Dark states, judges current
Whether brightness belongs to completely black scope, i.e. Dark scopes, and two kinds of parallel port view data to cmos sensor carry out image measurement；It is right
View data carries out image measurement, there is completely black point when judging current, i.e. Dark points have, and classify as Dark bad.
Although being described to illustrative specific embodiment of the invention above, in order to the technology of the art
Personnel are it will be appreciated that the present invention, but the present invention is not limited only to the scope of specific embodiment, to the common skill of the art
For art personnel, as long as long as various change is in appended claim restriction and the spirit and scope of the invention for determining, one
The innovation and creation using present inventive concept are cut in the row of protection.
Claims (5)
1. a kind of method of testing of cmos sensor, it is characterised in that：The described method comprises the following steps：
(1) connecting test system；
(2) sent by the host computer and instructed, carry out cmos sensor open-short circuit, carry out out poor short circuit classification；
(3) sent by the host computer and instructed, carry out the image measurement of cmos sensor, carry out the bad classification of image；
(4) predetermined current threshold, is sent by the host computer and instructed, and carries out the leakage testses of cmos sensor, by treatment
Device is in PWDN states by cmos sensor, and electric current Ip on test cmos sensor power supply Pin, Ip is more than the current threshold
When, it is judged as that electric leakage is bad；
(5) the test system programming count cmos sensor total number measured amount and each bad quantity；
(6) test system outputs test result and statistics automatically, the programming count output number of stoppages, and output format is
Excel statement forms.
2. the method for testing of a kind of cmos sensor according to claim 1, it is characterised in that：The step (2) includes：
A () host computer sends open-short circuit instruction, imageing sensor instructs the controlling switch selection according to open-short circuit
Circuit module, disconnects cmos sensor and MIPI bridge modules, sets cmos sensor power supply Pin and is set to 0V；
B electric current that () constant-current source exports+100uA gives cmos sensor Pin to be measured, tests to be measured on the Pin by ADC
Pin voltages, Pin voltages V1 to be measured judges the Pin to be measured and cmos sensor power supply Pin short circuits, Pin voltages V1 to be measured when being 0V
Judge that the Pin to be measured and cmos sensor power supply Pin opens a way more than 2V；
C electric current that () constant-current source exports -100uA tests to be measured on the Pin to cmos sensor Pin to be measured by ADC
Pin voltages, Pin voltages V2 to be measured judges the Pin to be measured with the Pin short circuits of cmos sensor ground, Pin voltages V2 numerical value to be measured for 0V
Less than -2V, judge the Pin to be measured with cmos sensor ground Pin open circuits；
D () more emat sensor Pin to be measured successively, repeat step (b)-step (c), cmos sensor Pin is changed after finishing and entered
Step (e)；
E () controls the switch selection circuit module, by cmos sensor except all of Pin is grounded, the constant-current source is to power supply
Pin is input into the electric current of -100uA, and the voltage of power supply Pin is tested by ADC, and power supply Pin voltages are power supply Pin when V3 is 0V
With ground Pin short circuits.
3. the method for testing of a kind of cmos sensor according to claim 1, it is characterised in that：The step (3) includes：
(A) image processor controlling switch selection circuit is connected with cmos sensor, and the ID of cmos sensor is read by I2C methods
Number；
(B) parameter initialization is carried out to cmos sensor；
(C) intensity of illumination is set by light source module；
(D) image measurement is carried out to cmos sensor parallel port view data；
(E) by light source module setting normally, dark-state and completely black intensity of illumination, repeat step (D)-(E).
4. the method for testing of a kind of cmos sensor according to claim 3, it is characterised in that：In the step (D) simultaneously
Mouth view data also includes initializing startup MIPI bridge modules by image processor, and the MIPI bridge modules decode CMOS
The parallel port view data that sensor MIPI mouthfuls of data are obtained.
5. the method for testing of a kind of cmos sensor according to claim 3, it is characterised in that：Described image test includes
Dead pixel points of images is tested, image smear test, image bad row, bad row test and image color cast test.
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| CN108107309A (en) * | 2018-02-11 | 2018-06-01 | 苏州晶方半导体科技股份有限公司 | Integrated circuit test system |
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| CN111866500A (en) * | 2020-08-05 | 2020-10-30 | 昆山软龙格自动化技术有限公司 | Image testing device based on FPGA, Intel CPU and WIFI6 |
| CN113933638A (en) * | 2021-11-01 | 2022-01-14 | 豪威科技(北京)股份有限公司 | Test equipment of fingerprint image module |
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| CN113933638A (en) * | 2021-11-01 | 2022-01-14 | 豪威科技(北京)股份有限公司 | Test equipment of fingerprint image module |
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Application publication date: 20170613 |