CN106835016A - 一种Er掺杂的氮化铝压电薄膜材料 - Google Patents

一种Er掺杂的氮化铝压电薄膜材料 Download PDF

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CN106835016A
CN106835016A CN201710062647.0A CN201710062647A CN106835016A CN 106835016 A CN106835016 A CN 106835016A CN 201710062647 A CN201710062647 A CN 201710062647A CN 106835016 A CN106835016 A CN 106835016A
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er
film material
aln
piezoelectric film
aluminum nitride
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CN201710062647.0A
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杨成韬
泰智薇
胡现伟
牛东伟
唐佳琳
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电子科技大学
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641Nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation

Abstract

本发明公开了一种Er掺杂的氮化铝压电薄膜材料,涉及压电薄膜材料领域。本发明材料的化学式为ErxAl1‑xN,其中,x为Er的含量,1‑x为AlN的含量,x≦0.5。本发明采用现有薄膜制备技术,在多种可选择衬底上沉积生长Er掺杂的AlN压电薄膜,在不增加工艺难度的基础上通过Er掺杂AlN后薄膜结构的改变来尽可能的提升AlN薄膜的压电性能,在压电薄膜材料技术领域具有良好的推广应用前景。

Description

一种Er掺杂的氮化铝压电薄膜材料

技术领域

[0001] 本发明属于压电薄膜材料领域,特别涉及一种Er掺杂的氮化铝压电薄膜材料。

背景技术

[0002] 氮化铝(ain)是m-v族氮化物半导体材料,属于六方纤锌矿结构,具有一系列优 异的物理化学性质,如禁带宽度大(6.2ev)、高的热导率、低的热膨胀系数、高硬度、化学稳 定性好、大的击穿场强和低的介电损耗、可用于高功率的微电子器件和深紫外发光电子器 件,其应用前景十分广阔。此外,氮化铝(A1N)作为压电材料不仅具有高的声表面波传播速 度(10400m/s),而且与互补金属半导体(CMOS)工艺兼容,成为当前通讯业发展所需高频声 表面波器件的首选材料。但由于氮化铝(A1N)压电性能与氧化锌(ZnO)、锆钛酸铅(PZT)相比 较低,限制了氮化铝(A1N)的进一步应用。故而,如何有效提高氮化铝(A1N)的压电性能成为 研宄中所要解决的问题。

发明内容

[0003] 针对现有技术的不足,本发明提供一种Er掺杂的氮化铝压电薄膜材料。

[0004]为克服现有技术氮化铝薄膜材料压电性能欠佳的不足,本发明为提高氮化铝薄膜 材料的压电性能采用如下技术方案:

[0005] 一种Er掺杂的氮化铝压电薄膜材料,其特征在于,所述Er掺杂的氮化铝压电薄膜 材料的化学式为ErxA:U—XN,其中,x为Er的含量,1-x为A1N的含量,x含〇. 5。

[0006]本发明中Er掺杂的氮化铝压电薄膜材料可以采用反应磁控濺射法、真空蒸发镀膜 法、脉冲激光沉积法等合适的薄膜制备方法制备。

[0007] 本发明中Er掺杂的氮化铝压电薄膜材料在制备中所需的衬底材料为表面光滑材 料;

[000S]本发明中Er掺杂的氮化铝压电薄膜材料在制备中使用的靶材可以是合金靶、镶嵌 靶、双靶等。

[0009] 相比现有技术,本发明的有益效果是:

[0010]本发明采用现有薄膜制备技术,在多种可选择衬底上沉积生长Er掺杂的A1N压电 薄膜,在不增加工艺难度的基础上通过Er掺杂A1N后薄膜结构的改变来尽可能的提升A1N薄 膜的压电性能。稀土元素Er的离子半径比A1的大,掺杂取代部分A1原子后会使晶体的晶格 常数发生畸变;Er的电负性比A1小,Er的掺入使A1N中原有的纯共价键变成共价键和离子键 共存的混合态;且ErN为立方相,随着Er掺杂含量的不断增加其晶体结构一定会出现六方相 A1N和立方相ErN共存的过渡态。因此,Er掺杂A1N后薄膜结构的改变,从而提升A1N的压电性 能。基于此,本发明具有良好的推广应用前景。

附图说明

[0011]图1为本发明所述的一种Er掺杂氮化铝的压电薄膜材料的结构示意图;其中:!为 衬底材料,2为Er掺杂氮化铝压电薄膜。

具体实施方式

[0012]下面结合实施例和说明书附图,详细描述本发明的技术方案:

[0013] 实施例:

[0014] —种Er掺杂的氮化错压电薄膜材料通过射频反应磁控灘射法制备的具体步骤如 下:

[0015] 步骤A:预处理衬底;

[0016] 本实施例采用已经经过抛光处理的硅(Si)作为衬底,用丙酮、乙醇、去离子水各超 声清洗15分钟后,再用高压氮气吹干;

[0017] 步骤B制备A1N薄膜;

[0018] B1:选择高纯铝铒镶嵌靶作为靶材,对真空腔室进行清洁处理,放入衬底材料,固 定好靶材,打开真空系统; _9] B2::当背底真空达到l〇-3Pa时,将真空腔室温度升高到20(TC并保温20分钟后,通 入氩气(纯度99 • 99%)使得其含量为2 • 2并维持10分钟;

[0020] B3:通入氩气(纯度Q9.的%)使得其含量为6.0,调节溅射功率为120W,溅射时间15 分钟;

[0021] B4:调节工艺参数具体如下:溉射温度为35(rc,濺射功率为150W,靶基距为65mm, 工作压强为〇.5Pa,通入的氩气和氮气的含量比为氩气:氮气二7:4,溅射时间为120分钟。 [0022]步骤C:漉射结束后,对制得的薄膜保温丨小时,待真空腔室温度温度降到5〇。以下 关闭设备。

[0023]根据本实施例所得薄膜材料的结构如图i所示,其中,1为硅衬底材料,2为社掺杂 的A1N压电薄膜,Er掺杂的A1N压电薄膜在硅衬底材料上沉积生长。

[0024]以上对本发明的实施例进行了详细说明,但所述内容仅为本发明的较佳实施例, 并不用与限制本发明。凡在本发明的申请范围内所做的任何修改,等同替换和改进均应包 含在本发明的保护范围之内。

Claims (2)

1.一种Er掺杂的氮化铝压电薄膜材料,其特征在于,所述Er掺杂的氮化铝压电薄膜材 料的化学式为ErxAl^N,其中,x为Er的含量,1-x为A1N的含量,x兰0 •5。
2.根据权利要求1所述一种Er掺杂的氮化铝压电薄膜材料,其特征在于,所述Er掺杂的 氮化铝压电薄膜材料通过反应磁控涵射法、真空蒸发锻膜法或脉冲激光沉积法制备。
CN201710062647.0A 2017-01-24 2017-01-24 一种Er掺杂的氮化铝压电薄膜材料 CN106835016A (zh)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103795366A (zh) * 2012-10-27 2014-05-14 安华高科技通用Ip(新加坡)公司 体声波谐振器结构、薄膜体声波谐振器结构以及固体装配型谐振器结构

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103795366A (zh) * 2012-10-27 2014-05-14 安华高科技通用Ip(新加坡)公司 体声波谐振器结构、薄膜体声波谐振器结构以及固体装配型谐振器结构

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NARANG,V ET AL.: "Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements", 《JOURNAL OF APPLIED PHYSICS》 *

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