CN106816182B - Injecting one kind of electron collector - Google Patents

Injecting one kind of electron collector Download PDF

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CN106816182B
CN106816182B CN201611186753.1A CN201611186753A CN106816182B CN 106816182 B CN106816182 B CN 106816182B CN 201611186753 A CN201611186753 A CN 201611186753A CN 106816182 B CN106816182 B CN 106816182B
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electron
injection
unit
injected
electrons
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CN106816182A (en
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杨州军
孙宗昌
蔡豪
谢先立
阮博文
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华中科技大学
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Abstract

本发明公开了一种注入电子收集器,包括注入电子收集单元,偏压电源单元,数据采集处理单元和调节单元;注入电子收集单元通过托卡马克装置的窗口深入装置内并可在装置内上下移动,用于收集注入电子;偏压电源单元用于给注入电子提供偏压,将注入电子输送到数据采集处理单元;数据采集处理单元用于采集注入电子电流,并根据注入电子电流确定收集的注入电子的数量,电子注入源及注入器角度调节单元根据固定时间间隔内的注入电子数量差来自适应地调整电子注入源的电子密度和电子漂移注入器的注入角度,确定托卡马克装置具有最大注入电子率时,对应的电子注入源的最佳电子密度和电子漂移注入器的最佳注入角度。 The present invention discloses an injected electron collector, comprising an electronic injection collecting unit, the bias power supply unit, a data acquisition and processing unit and a regulating unit; injection of electrons collected by the unit depth within the window tokamak device and down within the apparatus movement, for collecting electrons injected; bias power supply unit for providing a bias to the injection of electrons, transporting the injected electrons to the data acquisition and processing unit; data acquisition and processing unit for collecting the electron current injected, and the injection is determined according to the electron current collector the number of injected electrons, an electron source and an injector injection angle adjusting unit adapted to adjust the difference in the electron injection from the source of the electron density and the electron drift injection angle of the injector according to the number of injected electrons in the fixed time interval, having a maximum determined tokamak when the electron injection rate, the optimal electron density and the electron injection source corresponding to the optimum injection angle of drift of the injector.

Description

—种注入电子收集器 - kind of injected electron collector

技术领域 FIELD

[0001]本发明属于托卡马克装置注入电子的收集技术领域,更具体地,涉及一种注入电子收集器,用于托卡马克装置电子漂移注入实验。 [0001] The present invention belongs to the technical field tokamak injection of electrons collected, and more particularly, to an injected electron collector for electron drift Tokamak injection experiments.

背景技术 Background technique

[0002]在可控核聚变的研宄过程中,实现托卡马克装置的低环电压启动意义重大,它既可以节省消耗于放电起动阶段的加热场伏秒数,从而为拉长等离子体放电持续时间创造条件,又可以降低对加热场电源的要求,节省大量经费。 [0002] In the study based on the process of controlled nuclear fusion, low voltage start Tokamak ring is significant, the heating field can be saved both volt-seconds consumed for discharge start-up phase, so as to lengthen the plasma discharge duration create conditions, but also reduce the power requirements of the heating field, saving a lot of money. 特别是对目前和下一代的大型超导托卡马克装置,出于超导极向场线圈安全运行的要求以及防止超导线圈失超频繁发生,研究电子漂移注入对降低托卡马克装置的环电压启动及等离子体约束输运性能的影响有深远的意义。 Especially for current and next generation of large superconducting tokamak, the poloidal field superconducting coils for the safe operation of the superconducting coil requirements and prevent the frequent occurrence of quench, injecting Electron drift ring to reduce tokamak and the voltage starting affect the performance of plasma transport constraints have far-reaching significance.

[0003]在托卡马克装置中进行电子漂移注入实验时,电子注入的条件,包括注入电子的密度、注入的角度,都可能会对托卡马克装置放电时降低启动环电压产生影响。 Reducing the starting voltage generating rings affect the angle [0003] in tokamak drift electron injection experiments, an electron injection conditions including the density of electrons injected, implanted, may be tokamak discharge. 因此,能够提高并得到准确的电子注入率、以及在该电子注入率下电子注入源的最佳电子密度和电子漂移注入器的最佳注入角度是实现电子漂移注入降低环电压启动的关键,因此必须收集到电子漂移注入时托卡马克装置内的注入电子;然而,目前尚没有用来收集漂移注入电子的装置。 Thus, accurate and possible to improve the electron injection rate, and the angle at the optimum injection rate of injection of the electron source the electron injection and the electron density of the electron drift optimum injector injecting electron drift is to achieve reduced voltage start key ring, so injection must be collected within the tokamak electron injecting electrons drift; however, there is currently no means for collecting the electrons injected into the drift.

发明内容 SUMMARY

[0004]针对现有技术的以上缺陷或改进需求,本发明提供了一种注入电子收集器,其目的在于收集托卡马克装置内的注入电子,并根据注入电子数量的变化来调整电子注入源的注入电子密度和电子注入器的注入角度,实现托卡马克装置的电子注入率的最大化。 [0004] To solve the above drawbacks of the prior art or the need for improvement, the present invention provides an electron collector injection, an object of injecting electrons collected in the tokamak and adjust the electron injection source changes according to the number of electrons injected the injected electron density and the angle of injection of the injector, the rate of electron injection to maximize tokamak.

[0005]为实现上述目的,按照本发明的一个方面,提供了一种注入电子收集器,包括依次相连的注入电子收集单元、偏压电源单元、数据采集处理单元和调节单元;调节单元的输出端用于连接外部电子注入器和电子注入源; [0005] To achieve the above object, according to one aspect of the present invention, there is provided an injected electron collector, comprising an electronic injection collecting unit, the bias power supply unit, a data acquisition and processing unit and adjustment unit sequentially connected; adjustment output unit terminal for connecting an external electron source and an electron injection injector;

[0006]其中,注入电子收集单元用于收集注入电子;偏压电源单元用于给注入电子提供偏压,将注入电子输送到数据采集处理单元;数据采集处理单元用于采集注入电子电流,并根据注入电子电流确定注入电子数量,并对前后两个固定时间间隔内的注入电子数量进行比较,获取注入电子数量差;调节单元根据该注入电子数量差来自适应地调整电子注入源的电子密度和电子注入器的注入角度,最终确定托卡马克装置具有最大注入电子率时,对应的电子注入源的最佳电子密度和电子注入器的最佳注入角度。 [0006] wherein, injecting the electron collecting means for collecting the electron injection; bias power supply unit for providing a bias to the injection of electrons, transporting the injected electrons to the data acquisition and processing unit; data acquisition and processing unit for collecting the electron injection current, and the injected electron current determines the electron injection amount, and the amount of injected electrons in the two front and rear fixed time interval is compared, the difference between the number of electrons injected acquired; adjustment unit adaptively adjust the electron density of the electron injection to the source based on the number of injected electrons and the difference when the electron injection angle of the injector, a final determination tokamak having a maximum electron injection rate, the optimum injection angle corresponding to the optimum electron density and an electron injector injection source.

[0007] 优选地,上述注入电子收集器,其注入电子收集单元包括正面电子收集板、反面电子收集板、绝缘板、支撑架和两根连接导线; [0007] Preferably, the injected electron collector which electrons are injected electron collecting unit collecting plate including a front, back electron collecting plate, insulating plate, the support frame and the two connecting lines;

[0008] 其中,正面电子收集板和反面电子收集板分别紧贴在绝缘板两侧;支撑架固定在绝缘板上,用于将注入电子收集器与外部的高度调节装置相连;两根连接导线的一端分别与正、反面电子收集板相连,从绝缘板和支撑架中穿过,另一端则分别与偏压电源单元相连; [0008] wherein the front and reverse surfaces of the electron collection plate electron collecting plates are respectively in close contact with both sides of the insulating plate; insulating plate fixed to the support frame, for injecting an external electron collector is connected to height adjusting means; two connecting wire end, respectively positive and negative electron collecting plate, passing through the insulating plate and the support frame, the other end are connected to a bias power supply unit;

[0009]绝缘板用于正面电子收集板与反面电子收集板之间的绝缘,以及正、反面电子收集板与支撑架之间的绝缘;导线用于传输注入电子; [0009] an insulating plate for insulating between the front plate and the back electron collection electron collecting plate, and the positive, negative electron insulation between the collecting plate and support frame; wire for transmitting injecting electrons;

[0010]工作时,注入电子收集单元通过其支架经由托卡马克装置的窗口置于托卡马克装置内,并可在外部高度调节装置的配合下在托卡马克装置内上下移动。 When the [0010] work, which is injected through the electron collecting unit via a bracket disposed within the window tokamak tokamak, and the mating external height adjusting means moves up and down within the tokamak.

[0011]优选的,上述注入电子收集器,其正面电子收集板垂直于纵场且板面对着顺磁力线的方向放置,用于捕捉电子漂移注入时托卡马克装置内顺磁力线方向的电子;其反面电子收集板垂直于纵场且板面对着逆磁力线的方向放置,用于捕捉电子漂移注入时托卡马克装置内逆磁力线方向的电子;工作时,使注入电子收集单元在托卡马克装置内垂直于纵场的一维方向上上下移动。 [0011] Preferably, said injecting electron collector, the electron collecting plate to the front surface and the vertical field along the direction facing the magnetic plate placed perpendicular to the line, means for capturing the forward direction of the magnetic field lines when the Tokamak electron drift electrons injected; its reverse electron collecting plate perpendicular to the longitudinal direction of the plate facing the field and magnetic lines of force is placed against, for capturing electrons injected into the drift tokamak electronic reverse magnetic field lines; operation, the injected electron collecting unit tokamak means movable in the vertical direction of a one-dimensional vertical longitudinal field.

[0012]优选地,上述注入电子收集器,其绝缘板为T型结构,正面电子收集板、反面电子收集板均为倒L型结构,以使注入电子收集单元形成稳定结构;正面电子收集板和反面电子收集板的表面和边缘光滑,以防止注入电子收集单元在托卡马克装置内移动时出现打火现象。 [0012] Preferably, the injected electron collector, an insulating plate which is T-shaped structure, positive electron collecting plate, negative electron collector plate are reverse L-shaped structure, so that electrons are injected collecting unit in a stable structure; positive electron collector plate and a back surface and edges smooth electron collecting plate to prevent the injection phenomenon ignition electron collecting unit moves in the tokamak.

[0013] 优选地,上述注入电子收集器,其绝缘板的厚度为4mm〜8mm。 [0013] Preferably, the injected electron collector, the thickness of the insulating plate is 4mm~8mm.

[0014] 优选地,上述注入电子收集器,其偏压电源单元提供的电压为40V〜80V直流电压, 以防止对数据采集处理单元造成大的电磁干扰。 [0014] Preferably, the injected electron collector, which bias voltage supplied to the power supply unit 40V~80V DC voltage, to prevent electromagnetic interference caused by a large collection of data processing units.

[0015] 优选地,上述注入电子收集器,其数据采集处理单元的采集处理精度在微安电流量级。 [0015] Preferably, the injected electron collector, acquisition and processing accuracy of data acquisition and processing unit which is in the order of microamps.

[0016] 总体而言,通过本发明所构思的以上技术方案,能够取得下列有益效果: [0016] In general, the above technical solution of the present invention is contemplated, the following advantageous effects can be obtained:

[0017] (1)本发明提供的注入电子收集器,可在真空条件和单通纵场的条件下,获得较准确的电子漂移注入时的注入电子率,并且能够在垂直于纵场的一维方向上上下移动调节, 探求注入电子在托卡马克装置内的运动轨迹;为电子漂移注入时调节注入电子密度和注入电子角度提供依据;并通过前后两个固定时间间隔内的注入电子数量差,来调节电子注入源的注入电子密度和电子漂移注入器的注入电子角度,从而在托卡马克装置内获得最大的电子注入率; [0017] (1) The invention provides the injection electron collector, may be under vacuum conditions and conditions of single-pass longitudinal field and obtain more accurate injection of electrons rate of electromigration injection, and can be a to the longitudinal field in the vertical adjusting the vertical movement dimensional direction, electrons are injected seek trajectory in a tokamak; is the electron drift adjust implant injection electron density and electron injection angles provide basis; and the difference in the number of electrons injected through a fixed time interval before and after two to adjust the electron source of injecting electrons are injected electron density and the angle of drift of the injector so as to obtain the maximum injection rate of electrons in the tokamak;

[0018] (2)本发明提供的注入电子收集器, [0018] (2) into the electron collector is provided according to the present invention,

[0019] 在托卡马克装置内真空和单通纵场条件下运行时不会给装置引入杂质;并且其注入电子收集单元的机械结构简单,便于加工和安装; > [0019] No device to operate within the vacuum tokamak toroidal field and single-pass condition when the impurity is introduced; and electrons injected into the mechanical structure of the collection unit is simple, easy processing and installation;>

[0020] (3)本发明提供的注入电子收集器,其数据采集处理单元可采用DSP芯片,数据处理速度较快,精度较高,进而获得快且准的注入电子密度调节和角度调节。 [0020] (3) injected into the electron collector provided by the present invention, the data acquisition and processing unit DSP chip may be employed, the data processing speed, high precision, fast and then get quasi injected electron density adjustment and angle adjustment.

附图说明 BRIEF DESCRIPTION

[0021] 图1是实施例提供的注入电子收集器的功能框图; _ _ [0021] FIG. 1 is a functional block diagram of an injected electron collector according to an embodiment; _ _

[0022] 图2是实施例提供的注入电子收集器的注入电子手机单元的机械原理示意图; [0023]图3是实施例提供的注入电子收集器在J-TEXT装置应用中的示意图; [0022] FIG. 2 is a schematic view of the mechanical principle of injecting electrons injected from the electron collector phone unit according to an embodiment; [0023] FIG. 3 is a schematic view of the application apparatus in J-TEXT injecting electron collector according to an embodiment;

[0024]在所有附图中,相同的附图标记用来表示相同的元件或结构,其中:1-正面电子收集板、2-反面电子收集板、3-T型的绝缘板、4-支撑架、5-连接导线5。 [0024] Throughout the drawings, like reference numerals are used to designate the same elements or structures, wherein: the electron collection plate front 1-, 2- negative electron collecting plate, 3-T-type insulating plate, supporting 4- frame, 5-wire connection 5.

具体实施方式 Detailed ways

[0025]为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。 [0025] To make the objectives, technical solutions and advantages of the present invention will become more apparent hereinafter in conjunction with the accompanying drawings and embodiments of the present invention will be further described in detail. 应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。 It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention. 此外,下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。 Moreover, various embodiments of the invention described below involved the technical features as long as no conflict with one another can be configured in combination with each other.

[0026]实施例提供的注入电子收集器,其功能及原理如图1所示;包括依次相连的注入电子收集单元、偏压电源单元、数据采集处理单元和调节单元; [0026] The injected electron collector provided, the function and principle shown in Figure 1; injection of electrons comprises a collecting unit, the bias power supply unit, a data acquisition and processing unit and a regulating unit connected in sequence;

[0027]注入电子收集单元在偏压电源单元的作用下收集托卡马克装置内的注入电子,经过数据采集处理单元获得托卡马克装置内的注入电子的数量,数据采集处理单元将前后两个固定时间间隔内采集到的电子注入的数量进行比较,获得前后两个固定时间间隔内的注入电子数量差;调节单元根据该注入电子数量差的变化来调节外部电子注入源的电子密度大小,以及电子漂移注入器的注入角度。 [0027] collecting unit collects the injected electrons injected electrons in tokamak under a bias power supply unit, via the data acquisition processing unit acquires the number of injected electrons in tokamak, data acquisition and processing unit both before and after collected within a fixed time interval by comparing the number of electrons injected, the difference between the number of electrons injected into the two front and rear fixed time interval obtained; adjusting unit adjusts an external source of electron injection from the difference between the size of the electron density of the electron injection quantity variation, and angular drift of the electron injection injector.

[0028]据采集单元可实时获取所述注入电子数量差,调节单元根据注入电子数量差的实时变化自适应地调整电子注入源的电子密度,以及电子漂移注入器的注入角度;具体地,当前后两个固定时间间隔的注入电子数量差A ne(k)>0时,将电子注入源的电子密度及电子漂移注入器的角度按照上一步调节的方向进一步调节;当前后两个固定时间间隔的注入电子数量差A ne(k)=0时,保持电子注入源的电子密度及电子漂移注入器的角度不变;当前后两个固定时间间隔的注入电子数量差A ne(k)<0时,将电子注入源的电子密度及电子漂移注入器的角度按照与上一步调节方向相反的方向调节;从而获得托卡马克装置内电子漂移注入的最大电子注入率;其中,Ane⑹=ne(k)-ne(kl),ne(k)是第k个时间间隔的注入电子数量,ne (k-1)是第(k-1)个时间间隔的注入电子数量。 [0028] Real-time data acquisition unit may acquire the number of electrons injected difference, electron injection adjusting unit adjusts the source real-time changes in accordance with the difference between the number of electrons injected adaptively electron density, and the injection angle of the injector electron drift; in particular, the current when the amount of electrons injected difference a ne (k)> 0, the electron injection and the electron density of the electron source drift angle of the injector a fixed time interval after two further adjusting step according to the direction of adjustment; two fixed time interval after the current the amount of electrons injected difference a ne (k) = 0, the source maintaining the electron density of the electron injection and the electron drift angle injector unchanged; electron injection quantity difference a ne (k) of the current after a fixed time interval two <0 when the electron density and the electron injecting electron source drift injector in accordance with the angle adjusting step adjusting a direction opposite to the direction; thereby obtaining the maximum injection rate of electrons within the electron drift tokamak injection; wherein, Ane⑹ = ne (k ) -ne (kl), ne (k) is the k th time interval of the number of injected electrons, ne (k-1) is the number of electrons injected into the (k-1) th time interval.

[0029]具体应用中,根据托卡马克装置的窗口大小(R = 40mm)和限位器的具体位置来设计注入电子收集器的注入电子收集单元的尺寸;实施例提供的这种注入电子收集器,其注入电子收集单元的结构如图2所示,包括L型的正面电子收集板1、L型的反面电子收集板2、T 型的绝缘板3、支撑架4和连接导线5;正面电子收集板1和反面电子收集板2安装于绝缘板3 的两侧,导线5—端连接正、反面电子收集板,并从绝缘板和支撑架4的孔洞内穿过,另一端与偏压电源单元相连;整个注入电子收集单元通过支撑架4与位于托卡马克装置外的高度调节装置连接,以使得整个注入电子收集单元可在托卡马克装置内移动。 [0029] In particular applications, depending on the position of the window size tokamak (R = 40mm) and designed to stop injecting electrons injected collecting unit size of the electron collector; provided in this embodiment to collect electrons injected , a collecting unit which injects electrons configuration shown in Figure 2, comprises a front L-shaped electron collector plate 1, L type opposite electron collection plate 2, T-type insulating plate 3, the support frame 4 and the connecting wire 5; positive electron collecting plate 1 and the negative electron collector plate 2 is mounted on both sides of the insulating plate 3, the wire connecting the positive terminal 5-, negative electron collecting plate, and the holes through the insulating plate and the support frame 4, the other end of the biasing the power supply unit is connected; entire injection unit is connected via the electron collecting tokamak located outside the support frame height adjusting means 4, so that the entire unit may be moved to inject electrons collected in the tokamak.

[0030]实施例中,其注入电子收集单元的长为5〇臟,宽为70cm,收集板厚度2圆,绝缘板厚度5mm;各个板的拐角垂直,注入电子收集板的表面光滑。 Smooth vertical corners of each plate, the collecting plate surface of the electron injection; [0030] embodiment, the injected electron collecting dirty 5〇 unit length, 70cm width, thickness 2 circular collecting plate, insulating plate thickness 5mm embodiment.

[0031]图3所示,是实施例提供的这种注入电子收集器在托卡马克可控核聚变装置应用中的结构示意图,根据托卡马克装置的半径大小与外部限位器的具体位置将注入电子调节器放置在托卡马克内与纵场垂直的方向上,正面电子收集板1垂直于纵场且板面对着顺磁力线的方向,反面电子收集板2垂直于纵场且板面对着逆磁力线的方向。 [0031] FIG. 3, the specific location is provided in such a structural diagram of injected electron collector device application controlled nuclear fusion tokamak in accordance with the radius of the outer stopper Tokamak embodiment the injection direction is placed in the electronic regulator tokamak toroidal field perpendicular to the front electron collecting plate 1 and perpendicular to the longitudinal direction of the plate facing the field along the magnetic field lines, negative electron collecting plate 2 and the longitudinal field is perpendicular to the plate surface facing against the direction of magnetic field lines.

[0032]工作时,整个注入电子收集器上电后,调节单元根据数据采集处理单元的输出信号对外部电子注入源的电子密度及电子漂移注入器的角度进行自动调节,最终获得托卡马克内电子漂移注入的最大电子注入率。 When the [0032] work, the overall electrical electron collector implantation adjustment unit automatically adjusts the angle of the output signal of the data acquisition and processing unit and the electron density of the electron drift source external electron injection injector and, ultimately, the Tokamak the maximum injection rate of electron drift electron injection.

[0033]本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。 [0033] Those skilled in the art will readily appreciate, the above-described preferred embodiment of the present invention only but are not intended to limit the present invention, any modifications within the spirit and principle of the present invention, equivalent substitutions, and improvements, etc., should be included within the scope of the present invention.

Claims (7)

1. 一种注入电子收集器,其特征在于,包括依次相连的注入电子收集单元、偏压电源单元、数据采集处理单元和调节单元;所述调节单元的输出端用于连接外部电子注入器和电子注入源; 所述注入电子收集单元用于收集注入电子;偏压电源单元用于给注入电子提供偏压, 将注入电子输送到数据采集处理单元;所述数据采集处理单元用于采集注入电子电流,并根据注入电子电流确定注入电子数量,并对前后两个固定时间间隔内的注入电子数量进行比较,获取注入电子数量差;调节单元根据所述注入电子数量差来自适应地调整电子注入源的电子密度和电子注入器的注入角度。 An injection electron collector, characterized in that the collecting unit comprises sequentially injecting electrons, a bias power supply unit, a data acquisition and processing unit and adjustment unit is connected; adjusting said output terminal means for connecting an external electron injecting and injecting electron source; said collecting unit for collecting the electron injection injecting electrons; bias power supply unit for providing a bias to the injection of electrons, transporting the injected electrons to the data acquisition and processing unit; processing said data collection unit for collecting the electron injection current and the electron current injected is determined according to the number of injecting electrons, and both before and after the number of electrons injected within a fixed time interval is compared, the difference between the number of electrons injected acquired; electron injection unit according to the adjusted source electronic injection quantity difference adaptively adjust the electron density and the injection angle of the injector.
2. 如权利要求1所述的注入电子收集器,其特征在于,所述注入电子收集单元包括正面电子收集板、反面电子收集板、绝缘板、支撑架和两根连接导线; 所述正面电子收集板和反面电子收集板分别紧贴在绝缘板两侧;支撑架固定在绝缘板上,用于将注入电子收集单元与外部的高度调节装置相连;两根连接导线的一端分别与正、 反面电子收集板相连,从绝缘板和支撑架中穿过,另一端则分别与偏压电源单元相连。 2. The injection of the electron collector of claim 1, wherein said injection unit includes a front electronic electron collector collecting plate, negative electron collecting plate, insulating plate, the support frame and the two connecting wire; said front electronic electron collecting collector plate and negative plate are in close contact both sides of the insulating plate; insulating plate fixed to the support frame, for injecting electrons to an external collection unit height adjusting means connected; two wires respectively connected to one end of the positive and negative electron collecting plate, passing through the insulating plate and the support frame, the other end are connected to a bias power supply unit.
3. 如权利要求2所述的注入电子收集器,其特征在于,所述正面电子收集板垂直于纵场且板面对着顺磁力线的方向,用于捕捉电子漂移注入时托卡马克装置内顺磁力线方向的电子;其反面电子收集板垂直于纵场且板面对着逆磁力线的方向,用于捕捉电子漂移注入时托卡马克装置内逆磁力线方向的电子;工作时,使所述注入电子收集单元在托卡马克装置内垂直于纵场的一维方向上下移动。 3. The injection of the electron collector of claim 2, wherein the front plate is perpendicular to the electron collector and the longitudinal direction of the plate faces along the field lines of magnetic force for the Tokamak capture electron drift injection electron paramagnetic magnetic field lines; the negative electron collector plate and perpendicular to the longitudinal direction of the plate facing the reverse field lines of magnetic force, when used to capture drift electrons injected into the magnetic field lines tokamak reverse direction electrons; operation, the injection electron collecting unit one-dimensional direction perpendicular to the longitudinal field is moved up and down in a tokamak.
4. 如权利要求2或3所述的注入电子收集器,其特征在于,所述绝缘板为T型结构,所述正面电子收集板、反面电子收集板均为倒L型结构;所述正面电子收集板和反面电子收集板的表面和边缘光滑,以防止注入电子收集单元在托卡马克装置内移动时出现打火现象。 4. The injected electron collector of claim 2 or claim 3, wherein said insulating plate is a T-shaped structure, the front plate electron collector, negative electron collector plates are inverted L-shaped structure; the front electron collection plate surfaces and edges and the smooth back electron collection plate to prevent the injection phenomenon ignition electron collecting unit moves in the tokamak.
5. 如权利要求2或3所述的注入电子收集器,其特征在于,所述绝缘板的厚度为4mm〜 8mm 〇 5. The injected electron collector of claim 2 or claim 3, wherein the thickness of the insulating plate is 4mm~ 8mm square
6. 如权利要求1或2所述的注入电子收集器,其特征在于,所述偏压电源单元提供的电压为40V〜80V直流电压。 Injection or the electron collector as claimed in claim 12, wherein said bias voltage supply unit supplies a DC voltage to 40V~80V.
7. 如权利要求1或2所述的注入电子收集器,其特征在于,所述数据采集处理单元的采集处理精度在微安电流量级。 7. The injected electron collector of claim 1 or claim 2, characterized in that the acquisition and processing accuracy of the data acquisition and processing unit in order of microamps.
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