CN106813718A - A kind of device and method for measuring thin film strain and thermal conductivity - Google Patents

A kind of device and method for measuring thin film strain and thermal conductivity Download PDF

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CN106813718A
CN106813718A CN201710118131.3A CN201710118131A CN106813718A CN 106813718 A CN106813718 A CN 106813718A CN 201710118131 A CN201710118131 A CN 201710118131A CN 106813718 A CN106813718 A CN 106813718A
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film
strain
loading
thermal conductivity
thin film
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CN106813718B (en
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王海容
陈翰林
张咪
谷汉卿
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Research Institute Of Xi'an Jiaotong University Zhejiang
Xi an Jiaotong University
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Research Institute Of Xi'an Jiaotong University Zhejiang
Xi an Jiaotong University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00Measuring or testing not otherwise provided for
    • G01D21/02Measuring two or more variables by means not covered by a single other subclass

Abstract

The invention discloses a kind of device and method for measuring thin film strain and thermal conductivity, device includes a base, one shell being arranged on base, the base is provided with loading end, film sample is placed on loading end and connects with the freely-supported fixing end of shell upper, a precession guide rod is provided with below loading end, film sample is connected by sputtering test electrode with power supply.Feeding displacement S is controlled by precise guide rod at its radius by by circular membrane, using statics balance and the deflection theory of elastic sheet, the deflection equation of middle plectane can be obtained, when radius is equal to R0When, the deflection value of two parts is equal, by accurate thread stroke, can obtain radius in R and R0Between plectane i.e. feeding displacement S size, and then calculate middle circular membrane circumferential strain and radial strain value, the thermal conductivity of film is measured using 3 ω measuring methods, both realized the measurement of thermal conductivity of the film under differently strained.

Description

A kind of device and method for measuring thin film strain and thermal conductivity
Technical field
The present invention relates to micro-electromechanical system (MEMS) device, particularly a kind of device for measuring thin film strain and thermal conductivity And method.
Background technology
Along with the fast development of micro-electromechanical system (MEMS) technology, the thin-film device of all kinds of function admirables arises at the historic moment, its In, the MEMS type worked under thermal field is more and more, and consumption is also increasing, such as miniature infrared light supply, micro- gas Sensor, high temperature MEMS pressure sensor, operating temperature reach hundreds of or even thousands of degrees Celsius, and there is alternating temperature-changing, and this is right Membrane structure proposes requirement higher with the reliability of material military service.Especially in sensor field, some fundamental physical quantities are measured When, device can occur corresponding deformation unavoidably, produce strain, the strain responses of the film internal state of film, be determine it is thin The important factor of film integrality, be also determine device can normal work one of important factor, when the strain of film is excessive, It is possible that fracture, plastic deformation, come off, make thin film damage, and then whole device is lost the job ability, for semiconductor The research of thin-film material shows that strain plays vital to the structure of semiconductor nano material and its regulating and controlling effect of property Influence, such as semi-fluorinated single layer of gallium nitride nano thin-film can realize that ferromagneticization and antiferromagneticization mutually turn by straining Become, while the thermal conductivity of thin-film device directly affects device radiating efficiency.
For example in patent (B of Authorization Notice No. CN 103822736) " under the circular membrane concentrated force that a kind of determination periphery clamps In the method for thin film strain value " (He Xiaoting, Sun Junyi, Zheng Zhoulian, Cai Zhenhong etc.), the flat circle of friction is whether there is using a band Post applies a transverse load as loading axis in the center of circular membrane, can obtain thin at certain point by this method Membrane stress value, the different stress value of different radius correspondences, that is, different strains, but at this method different radii Strain is unequal, and this can not meet our demands to strain;For example in patent (Authorization Notice No. CN 102001617 B) in " a kind of flexible electronic device displacement loading device and method " (Feng Xue, Jiang Dongjie, Wang Yong), detailed elaborates using straight The method for flowing power supply, support, guide rail, spring etc. to reach the strain of the film of needs, by controlling the size of DC current, The size for being strained is connect, the strain that this method is obtained is not linear, and device is complicated, still can not meet demand.
Therefore strain becomes increasingly to protrude with the relation of the thermal conductivity of material in research thin-film device, particularly film material The thermal conductivity of material and the relation of strain, directly affect the performance of material, and thermal conductivity has extremely important to MEMS Effect and potential application value.This is accomplished by under temperature, research material strain and the relation of thermal conductivity, material should It is equal requirement that change must is fulfilled for measured zone internal strain.Therefore, a kind of circular membrane of simple supported edge fixation is studied to bear The device of thin film strain and thermal conductivity of thin film under concentration ring load so that it is simply easily achieved, and theoretical method is ripe The reliable technical problem urgently to be resolved hurrily as current this area.
The content of the invention
To solve drawbacks described above present in prior art, fixed it is an object of the invention to provide a kind of simple supported edge Circular membrane bears the device of thin film strain and thermal conductivity of thin film under concentration ring load.
The present invention is realized by following technical proposals.
A kind of device for measuring thin film strain and thermal conductivity, including a base, a shell being arranged on base, institute State base and be provided with loading end, the substrate for being coated with film is placed on loading end and connects with the freely-supported fixing end of shell upper, Loading end lower section is provided with a precise guide rod, and being coated with sputtering in the substrate of film has test electrode and a bonding jumper, test electricity The detecting system that pole has lock phase amplification module with outside is connected, and is connected to computer;
Cause to be coated with film in the substrate of film by the precession displacement S of precise guide rod and produce strain, by control into The size of thin film strain is controlled to displacement S, periodic current I is passed through by test electrodeω, computer reads electric from test The composition U of 3 ω harmonic waves of pole collectionSize obtain the thermal conductivity of film.
Preferably, the shell is round-meshed buckle closure shape, freely-supported fixing end is convex along bottom in circular hole; The loading end is discoid, is provided with raised loading annulus hemisphere in card top perimeter.
Further, the loading annulus hemisphere and the substrate contact for being coated with film are linear contact lay, and contact surface is same In horizontal plane.
Preferably, the film surface surveys thermal conductivity of film method according to 3 ω sputters four pads, using MEMS technology By a geometric scale for micron-sized bonding jumper is produced on film surface, four pads connect bonding jumper, and the pad includes , used as test electrode, it is shaped as two pairs of electric current anode and cathode terminals and voltage both positive and negative polarity for two electric current pads and two voltage pads Terminal is distributed in bonding jumper end according to π shapes.
Preferably, the maximum compression distance of the loading end is identical with the thickness of film.
Further, the pitch accuracy of precise guide rod is not more than 10 with the ratio of the film thickness being coated with-2
A kind of method that the present invention accordingly gives utilization described device measurement thin film strain and thermal conductivity, including following steps Suddenly:
1) it is that uniform deposition a layer thickness is t, Young's modulus E, Poisson's ratio for μ's treats in the circular-base of R in radius Survey film;
2) less than radius R0Be coated with film substrate surface sputtering test electrode, while using MEMS technology by one Geometric scale is produced on film surface for micron-sized bonding jumper, wherein (R0< R) R0For the loading annulus hemisphere on loading end is arrived The distance in the loading end center of circle;
3) a displacement S is applied by precise guide rod, the loading annulus hemisphere and freely-supported fixing end for corresponding to loading end exist A corresponding circumferential strain ε is produced on filmθ, the as strain of detected materials;
4) by step 2) substrate that has prepared is placed on the loading annulus hemisphere surface of device loading end, to test electrode Two electric current pads be passed through periodic current Iω, voltage tester electrode is connected to the outside detection with lock phase amplification module electric Lu Zhong, the data of collection are directly read using computer, after pending data stabilization, record the composition U of now 3 ω harmonic wavesIt is big It is small;
5) by controlling feeding displacement S, carry out the size of controlled strain, be independent variable to strain, 3 read by computer The composition U of ω harmonic wavesSize obtain the thermal conductivity k of film.
The beneficial effects of the present invention are:
The apparatus structure is simple, it is easy to operate, the size of the strain order of magnitude that film is produced, and thin film strain is at one The characteristics of in the region of determination without significant change, fully meet measurement film it is differently strained under thermal conductivity requirement;Measurement side Method mature and reliable, and being capable of practical application.
Brief description of the drawings
Fig. 1 is the front view of loading device.
Fig. 2 (a)-(c) is respectively front view, side view and the top view of loading shell.
Fig. 3 is the shape of sputtering test electrode.
Fig. 4 is electrode connection diagram when 3 ω methods measure thermal conductivity of thin film.
Fig. 5 is film, substrate, pad locations schematic diagram.
Fig. 6 is radius R0With strain stress relation figure.
Fig. 7 is guide rod stroke and strain stress relation figure.
In figure:The loading annulus hemisphere of 1- measurement apparatus;2- shells;3- bases;4 freely-supported fixing ends;5- is coated with film Substrate;6- loading ends;7- precise guide rods.
Specific embodiment
The invention will be described in further detail with reference to the accompanying drawings and examples, but is not intended as doing any limit to invention The foundation of system.
As shown in Figure 1, Figure 2 shown in (a)-(c), the device of present invention measurement thin film strain and thermal conductivity, including a base 3, One sets shell 2 on the base 3, and base 3 is provided with loading end 6, be coated with film substrate 5 be placed on loading end 6 and with The freely-supported fixing end 4 on the top of shell 2 connects, and a precise guide rod 7 is provided with below loading end 6, is coated with the substrate 5 of film and splashes Test electrode and a bonding jumper are penetrated, the detecting system that test electrode has lock phase amplification module with outside is connected, and connects To computer;Cause that the film being coated with the substrate 5 of film produces strain by the precession displacement S of precise guide rod 7, by control Feed displacement S to control the size of thin film strain, periodic current I is passed through by test electrodeω, computer read from test The composition U of 3 ω harmonic waves of electrode collectionSize obtain the thermal conductivity of film.
The shell of the device is round-meshed buckle closure shape, and freely-supported fixing end 4 is convex along bottom in circular hole;It is described Loading end is discoid, is provided with raised loading annulus hemisphere 1 in card top perimeter.Film sample base material has Elastic modelling quantity higher, substrate is preferably circle, and upper and lower surface wants enough smooth, it is ensured that test material is evenly distributed on substrate Surface, diameter can be determined according to the actual size of device.
As shown in Figure 3, Figure 4, film surface surveys thermal conductivity of film method and sputters four pads in strict accordance with 3 ω, uses By a geometric scale for micron-sized bonding jumper is produced on film surface, four pads connect bonding jumper, pad to MEMS technology Including two electric current pads and two voltage pads as test electrode, it is being shaped as two pairs of electric current anode and cathode terminals and voltage just Negative terminal is distributed in bonding jumper end according to π shapes.
Be coated with thin film on the surface of substrate 5 for being coated with film, and be coated with the maximum compression distance of the substrate 5 of film with The thickness of film is identical.The pitch accuracy of precession precise guide rod 7 is not more than 10 with the ratio of coating film thickness-2.Loading annulus half It is linear contact lay that ball 1 is contacted with the substrate 5 for being coated with film, and contact surface is in same horizontal plane.
The present invention measures thin film strain:
By thickness be t, Young's modulus E, Poisson's ratio be μ, radius be R circular membrane, using simple supported edge fixed form, It is that the hemispheroidal precise guide rod of annulus that radius is a controls feeding displacement S, the annulus hemisphere where precise guide rod to apply by one end Should be kept with circular membrane on same axis during loading lotus, using statics balance and the deflection theory of elastic sheet, can To obtain the deflection equation of middle plectane, radius is obtained in R using similar method analysis0The amount of deflection side of the plectane and R between Journey, the size of analysis shows strain is only the function of displacement S, is obtained by continuity principle, when radius is equal to R0When, two parts Deflection value it is equal, by accurate thread stroke, radius can be obtained in R0The angle value of disturbing of the plectane and R between (feeds position Move the size of S), and then middle circular membrane circumferential strain and radial strain value are calculated, measure film using 3 ω measuring methods Thermal conductivity, both realized the measurement of thermal conductivity of the film under differently strained.
Specific method is as follows:
Step one:As shown in figure 5, being that uniform deposition a layer thickness is t, Young's modulus in the circular-base of R in radius E, Poisson's ratio are the film to be measured of μ.
Step 2:As shown in Figure 4 and Figure 5, less than radius R0Be coated with film substrate surface sputtering test electrode, together Shi Caiyong MEMS technologies by a geometric scale for micron-sized bonding jumper is produced on film surface, wherein, R0< R, R0It is loading Annulus hemisphere to the distance in the loading end center of circle is loaded on end.
Step 3:In its radius R0(R0< R) place by precise guide rod apply a less displacement S, correspond to loading end Loading annulus hemisphere a corresponding circumferential strain ε is produced on film to be measured with freely-supported fixing endθ, as detected materials Strain.It is that the hemispheroidal precise guide rod of annulus that radius is a controls feeding displacement by one end using simple supported edge fixed form S, the hemisphere in precise guide rod should keep with circular membrane in same axial location when imposed load, based on this axle pair The statics and deflection theory of circular membrane problem is claimed to be analyzed as follows.
First to R0<r<R annulus film substrates are analyzed, and the transverse shearing force that film substrate is subject to is:
It is brought into corresponding equilibrium equation:
Film thickness be t, Young's modulus E, Poisson's ratio be μ;The bending rigidity of the circular membrane substrate that D is represented;ω (r) tables Show film substrate deflection equation;QrThe transverse shearing force that expression is subject to;F represents annulus concentrfated load power.
To r continuous integrals three times, R is obtained0<r<R annulus film substrate deflection equations:
Substitute into corresponding boundary condition:
R=R, ω (r)=0, Mr=0;R=R0,Mr=0
MrThe radial direction moment of flexure that the circular membrane substrate of expression is subject to.
Obtain R0<r<R annulus film substrate deflection equations are:
Work as r=R0When, S=ω (r), the size that can further obtain annulus concentrfated load F is:
Again to middle circular membrane substrate r≤R0It is analyzed, the shearing being now subject to is:
Qr=0
It is brought into corresponding equilibrium equation:
To r continuous integrals three times, r≤R is obtained0Circular membrane substrate deflection equation:
Substitute into corresponding boundary condition:
R=0, θ1(0)=0;R=R01(R0)=ω (R0),θ1(R0)=θ (R0)
θ1That r () represents is radius no more than R0Circular membrane substrate corner, what θ (r) was represented is radius in R and R0 Between annulus film substrate corner.
Know that radial strain and circumferential strain are with the relation of amount of deflection simultaneously:
What wherein z was represented is thickness value of the film substrate apart from neutral surface, if the surface of circular membrane is then:
Learnt more than, i.e., radial strain and circumferential strain only and C1It is relevant, obtain r≤R0Circular membrane substrate deflection equation ω1C in (r)1It is:
Finally obtain:
Work as r=R0, using S=ω (R0)=ω1(R0) relation can further can obtain:
In formula t be the thickness of film, μ be Poisson's ratio, R0To load annulus hemisphere to the loading end center of circle on loading end Distance, R is the radius for loading annulus hemisphere and substrate contact profile, and S is the displacement of precise guide rod.
Conclusion:
(1) what now strain was represented is that (radius is not more than R to intermediate film0) strain, it can be seen that the size of strain is The function of guide rod displacement S, ε is obtained by above formulaθIt is linear relationship with guide rod displacement S;
(2) circumferential strain εθAnnulus hemisphere is loaded to the loading end center of circle apart from R with loading end0With functional relation. It is displacement S by guide rod screw thread travel, obtains circumferential strain εθ, in circular membrane surface sputtering test electrode, with circumferential strain εθ As the strain on measurement circular membrane surface, the thermal conductivity of film is measured using 3 ω methods.
3 ω measuring methods have proven to be a kind of very effective method of testing film thermal conductivity.One relatively thin electricity The metal wire of conduction is deposited on testing sample, and test electrode shape is shown in Fig. 3 and Fig. 4 with position.At two of mark electric current The periodic current I that frequency is ω is passed through on padω, this bonding jumper is both heater and temperature sensor, on bonding jumper The amplitude and phase of the Joule heat that frequency is 2 ω, thermal diffusion ripple will be produced to be become according to the thermal conductivity k and specific heat capacity c of material Change, composition U of the voltage comprising the 3 ω harmonic waves of measured by heater, this portion voltage is exactly the hot physical property of material The information of generation.Correlation theory verified UThere is f (U with k, k) functional relation
Step 4:The substrate that step 2 has been prepared is placed on the loading annulus hemisphere surface of device loading end, to surveying Two electric current pads for trying electrode are passed through periodic current Iω, voltage tester electrode is connected into outside has lock phase amplification module In detection circuit, the data of collection are directly read using computer, after pending data stabilization, record the composition U of now 3 ω harmonic waves Size.
Step 5:By controlling feeding displacement S, carry out the size of controlled strain, be independent variable to strain, it is machine-readable by calculating The composition U of the 3 ω harmonic waves for takingSize obtain the thermal conductivity k of film to be measured.
The thermal conductivity k of the film and composition U of harmonic waveObtained by following formula:
In formula, k is thermal conductivity, and P/l represents the heating power of bonding jumper heating film unit length respectively, and Δ T represents temperature Fluctuation, U0Represent fundamental voltage, R '0It is bonding jumper initial resistivity value, dR ,/dT represents resistance variation with temperature rate, URepresent Voltage containing 3 ω harmonic waves.
The method theoretical foundation is strong, the size of the strain order of magnitude that film is produced, and thin film strain is in determination The characteristics of in the same size in region, fully meet measurement film it is differently strained under thermal conductivity requirement;Measuring method maturation can Lean on, and being capable of practical application.
Wherein above-mentioned all parameters use the International System of Units.
Below the present invention is further illustrated to an instantiation.
The material of selection is aluminium, and specific parameter is:Radius of load R0=20mm, film radius R=35mm, Poisson's ratio μ =0.33, elastic modulus E=68.9Gpa, thickness t=0.8mm.
Now selection guide rod feeding length is displacement S=0.2mm, and the size for obtaining F by corresponding formula is:
F=111.7505N
εrθ=2.8767 × 10-4
By actual calculating and analysis, the size order for now straining meets demand.
Then calculated with multiple numerical value, now R0Untill uniformly increasing 1mm to 20mm since the 5mm, Fig. 6 is obtained.
Another theoretical test condition is:R0It is 20mm, film radius R=35mm, Poisson's ratio μ=0.33, elastic modulus E =68.9Gpa, thickness t=0.8mm.Guide rod stroke (compression distance, displacement S or ω1The deflection value of (r)) from 0.05mm to Between 0.3mm, drawn every 0.01mm, obtained such as Fig. 7.
Interpretation of result:Radius R0It is logarithmic function relation, guide rod stroke (compression distance, displacement S with the relation of thin film strain Or ω1The deflection value of (r)) with thin film strain be linear relationship, and strain size fully meet requirement.
The thermal conductivity of film, the I of the electric current being passed through now are finally measured using 3 ω measuring methodsω, test voltage U, Finally obtain strain stress and thermal conductivity k functional relation f (ε, k).
By embodiment as can be seen that present invention measurement thin film strain passes through thermal conductivity with strain with the method for thermal conductivity Relation, can determine the internal state of film, meet the demand to straining;Effectively solve device can normal work ask Topic.

Claims (9)

1. a kind of device for measuring thin film strain and thermal conductivity, it is characterised in that including a base (3), is arranged on bottom Shell (2) on seat (3), the base (3) is provided with loading end (6), and the substrate (5) for being coated with film is placed on loading end (6) And connect with the freely-supported fixing end (4) on shell (2) top, a precise guide rod (7) is provided with loading end (6) lower section, it is coated with thin Sputtering has test electrode and a bonding jumper in the substrate (5) of film, and test electrode has the detection of lock phase amplification module with outside System is connected, and is connected to computer;
By the precession displacement S of precise guide rod (7) such that the film being coated with the substrate of film (5) produces strain, by control Feed displacement S to control the size of thin film strain, periodic current I is passed through by test electrodeω, computer read from test The composition U of 3 ω harmonic waves of electrode collectionSize obtain the thermal conductivity of film.
2. a kind of device for measuring thin film strain and thermal conductivity as claimed in claim 1, it is characterised in that the shell (2) It is round-meshed buckle closure shape, freely-supported fixing end (4) is convex along bottom in circular hole;The loading end for discoid, Card top perimeter is provided with raised loading annulus hemisphere (1).
3. a kind of device for measuring thin film strain and thermal conductivity as claimed in claim 2, it is characterised in that the loading annulus It is linear contact lay that hemisphere (1) is contacted with the substrate (5) for being coated with film, and contact surface is in same horizontal plane.
4. a kind of device for measuring thin film strain and thermal conductivity as claimed in claim 1, it is characterised in that the film surface Thermal conductivity of film method being surveyed according to 3 ω and sputtering four pads, it is micron-sized metal by a geometric scale to use MEMS technology Bar is produced on film surface, and four pads connect bonding jumper, and the pad includes that two electric current pads and two voltage pads are made It is test electrode, it is shaped as two pairs of electric current anode and cathode terminals and voltage anode and cathode terminals are distributed in bonding jumper end according to π shapes.
5. a kind of device for measuring thin film strain and thermal conductivity as claimed in claim 1, it is characterised in that the loading end (6) maximum compression distance is identical with the thickness of film.
6. a kind of device for measuring thin film strain and thermal conductivity as claimed in claim 5, it is characterised in that precise guide rod (7) Pitch accuracy be not more than 10 with the ratio of the film thickness being coated with-2
7. a kind of method that utilization described device measures thin film strain and thermal conductivity, it is characterised in that comprise the steps:
1) it is that uniform deposition a layer thickness is t, Young's modulus E, Poisson's ratio for μ's is to be measured thin in the circular-base of R in radius Film;
2) less than radius R0The substrate surface for being coated with film sputtering test electrode, while using MEMS technology by a geometry Yardstick is produced on film surface for micron-sized bonding jumper, wherein, R0< R, R0It is the loading annulus hemisphere on loading end to loading Hold the distance in the center of circle;
3) a displacement S is applied by precise guide rod, corresponds to the loading annulus hemisphere and freely-supported fixing end of loading end in film One corresponding circumferential strain ε of upper generationθ, the as strain of detected materials;
4) by step 2) substrate that has prepared is placed on the loading annulus hemisphere surface of device loading end, to testing electrode two Individual electric current pad is passed through periodic current Iω, voltage tester electrode is connected to the outside detection circuit for having and locking phase amplification module In, the data of collection are directly read using computer, after pending data stabilization, record the composition U of now 3 ω harmonic wavesSize;
5) by controlling feeding displacement S, carry out the size of controlled strain, be independent variable to strain, 3 ω read by computer are humorous The composition U of rippleSize obtain the thermal conductivity k of film.
8. the method for measurement thin film strain and thermal conductivity according to claim 7, it is characterised in that it is described obtain strain with Displacement S has following relation:
&epsiv; &theta; = ( - S t 2 ) &lsqb; ln R 0 R + R 2 - 3 + &mu; 2 ( 1 + &mu; ) + ln R 0 R 1 R 2 - R 0 2 ( R 0 2 + R 3 1 + &mu; 1 - &mu; ) &rsqb; &divide; { 1 2 &lsqb; R 2 R 2 - R 0 2 ln R 0 R - 3 + &mu; 2 ( 1 + &mu; ) &rsqb; R 0 2 + R 2 R 0 2 R 2 - R 0 2 ( 1 + &mu; 1 - &mu; ln R 0 R - 1 2 ) ln R 0 R + R 2 ( 3 + &mu; ) 4 ( 1 + &mu; ) }
In formula t be the thickness of film, μ be Poisson's ratio, R0To load annulus hemisphere to the distance in the loading end center of circle, R on loading end It is loading annulus hemisphere and the radius of substrate contact profile, S is the displacement of precise guide rod.
9. the method for measurement thin film strain and thermal conductivity according to claim 7, it is characterised in that the thermal conductivity of the film The composition U of rate k and harmonic waveObtained by following formula:
k = - P 2 l &pi; d l n ( 2 &omega; ) d &Delta; T
U 3 &omega; = 1 2 U 0 R , 0 ( dR , d T ) &Delta; T
&Delta; T = 2 ( d T dR , ) R , 0 U 3 &omega; U 0
In formula, k is thermal conductivity, and P/l represents the heating power of bonding jumper heating film unit length respectively, and Δ T represents temperature fluctuation, U0Expression fundamental voltage, R,0It is bonding jumper initial resistivity value, dR ,/dT represents resistance variation with temperature rate, UExpression contains 3 The voltage of ω harmonic waves.
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CN108844990A (en) * 2018-04-10 2018-11-20 西安交通大学 One kind being based on MEMS technology thin film strain testing device for measuring thermal conductivity and method

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