CN106756052B - A kind of Rapid recovery device and technique of the chip of uranium zircaloy - Google Patents
A kind of Rapid recovery device and technique of the chip of uranium zircaloy Download PDFInfo
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- CN106756052B CN106756052B CN201710021877.2A CN201710021877A CN106756052B CN 106756052 B CN106756052 B CN 106756052B CN 201710021877 A CN201710021877 A CN 201710021877A CN 106756052 B CN106756052 B CN 106756052B
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B7/00—Working up raw materials other than ores, e.g. scrap, to produce non-ferrous metals and compounds thereof; Methods of a general interest or applied to the winning of more than two metals
- C22B7/001—Dry processes
- C22B7/003—Dry processes only remelting, e.g. of chips, borings, turnings; apparatus used therefor
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/14—Obtaining zirconium or hafnium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B60/00—Obtaining metals of atomic number 87 or higher, i.e. radioactive metals
- C22B60/02—Obtaining thorium, uranium, or other actinides
- C22B60/0204—Obtaining thorium, uranium, or other actinides obtaining uranium
- C22B60/0208—Obtaining thorium, uranium, or other actinides obtaining uranium preliminary treatment of ores or scrap
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B60/00—Obtaining metals of atomic number 87 or higher, i.e. radioactive metals
- C22B60/02—Obtaining thorium, uranium, or other actinides
- C22B60/0204—Obtaining thorium, uranium, or other actinides obtaining uranium
- C22B60/0213—Obtaining thorium, uranium, or other actinides obtaining uranium by dry processes
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
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- General Life Sciences & Earth Sciences (AREA)
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- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
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- Environmental & Geological Engineering (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Processing Of Solid Wastes (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of Rapid recovery device and technique of the chip of uranium zircaloy, the Rapid recovery device is used cooperatively with microwave high-temperature high vacuum furnace, the Rapid recovery device includes heating crucible, muff and the auxiliary thermosphere being filled between the heating crucible and muff, wherein, heating crucible is made of recrystallization SiC ceramics and inner surface is coated with calcium zirconate coating, and muff is by Al2O3It is made, auxiliary thermosphere is by ZrO2Particle or recrystallization SiC piece composition.The quick recovery process of the uranium zircaloy chip then carries out the recycling of uranium zircaloy chip using the Rapid recovery device of above-mentioned uranium zircaloy chip.The present invention can obviously reduce heating using power and will reduce more than half the time required to melting compared with other melting modes and device, therefore can reduce the waste of the energy, reduce pollution caused by uranium zircaloy removal process.
Description
Technical field
The invention belongs to metallurgical technical field, more particularly, is related to a kind of quick recycling dress of uranium zircaloy chip
Put and technique.
Background technology
Uranium zircaloy its with features such as excellent nuclearity energy, high-melting-point, corrosion resistancies, be that the fuel can of nuclear reactor is excellent
Material selection.
Can produce the radwastes such as more chip in uranium zircaloy process, cause raw material it is a large amount of waste with
And the pollution to environment, based on induction melting, equipment operationally consumes substantial amounts of energy for the recycling of uranium bits both at home and abroad at present,
Meeting generating material and energy waste in fusion process, and there are security risk sex chromosome mosaicism.
In recent years, microwave melting is caused with the advantages that firing rate is fast, the process time is short, energy consumption is low, small to environmental hazard
The extensive concern of people.
The content of the invention
In order to solve above technological deficiency, the present invention is intended to provide a kind of fast using microwave melting progress uranium zircaloy chip
The device and technique of speed recycling.
An aspect of of the present present invention provides the Rapid recovery device of uranium zircaloy chip, the Rapid recovery device and microwave
High temperature high vacuum furnace is used cooperatively, and the Rapid recovery device includes heating crucible, muff and is filled in the heating crucible
Auxiliary thermosphere between muff, wherein, the heating crucible is made of recrystallization SiC ceramics and inner surface is coated with calcium zirconate
Coating, the muff is by Al2O3It is made, the auxiliary thermosphere is by ZrO2Particle or recrystallization SiC piece composition.
One embodiment of the Rapid recovery device of uranium zircaloy chip according to the present invention, the muff include sleeve and
Head cover, is provided with thermometer hole on the head cover.
One embodiment of the Rapid recovery device of uranium zircaloy chip according to the present invention, the internal diameter of the heating crucible with
The ratio of wall thickness is 12:1~10:1, the thickness of the calcium zirconate coating is 0.05~0.15mm.
One embodiment of the Rapid recovery device of uranium zircaloy chip according to the present invention, the outside diameter of the heating crucible with
The ratio of the internal diameter of muff is 1:1.5~1:2.
One embodiment of the Rapid recovery device of uranium zircaloy chip according to the present invention, the packed height of the auxiliary thermosphere
Flushed with the top of heating crucible, the ZrO2The granularity of particle is 2~10mm, and the thickness of recrystallization SiC piece is 5~15mm.
Another aspect provides a kind of quick recovery process of uranium zircaloy chip, using above-mentioned uranium zircaloy
The Rapid recovery device of chip carries out the recycling of uranium zircaloy chip.
One embodiment of the quick recovery process of uranium zircaloy chip according to the present invention, including the chip carried out successively are clear
Wash, shove charge, melting and come out of the stove；
In the step of melting, it is higher than 5 × 10 in vacuum-2Microwave melting is carried out under the vacuum condition of Pa, including it is following
Sub-step：
Control heating power increases to maximum heating power Y with the speed of Y/10~Y/4W/min；
The maximum heating power Y is kept, until the temperature of uranium zircaloy chip reaches TIt is molten；
After uranium zircaloy chip is completely melt, control heating power is reduced to 0.6Y~0.8Y, keeps the temperature 10~30min,
Come out of the stove to obtain uranium zircaloy ingot after being cooled to room temperature；
Wherein, TIt is moltenFor the fusing point of uranium zircaloy chip, DEG C；Y is maximum heating power, W；The internal diameter Ф of Y and heating crucible1
(mm) ratio is 10:1~100:1.
One embodiment of the quick recovery process of uranium zircaloy chip according to the present invention, in the step of chip is cleaned,
The chip of uranium zircaloy clean and after the washing by uranium using three passage cleaning ways of buck, trichloro ethylene, alcohol
Uranium zircaloy chip group is pressed into after zircaloy chip drying；In the step of shove charge, uranium zircaloy chip group is loaded fast
In the heating crucible of fast retracting device, Rapid recovery device is put into microwave high-temperature high vacuum furnace, is vacuumized after closing stove.
One embodiment of the quick recovery process of uranium zircaloy chip according to the present invention, in the step of coming out of the stove, treats uranium
After zircaloy ingot is cooled to room temperature, it is passed through dry clean air and treats that vacuum is less than 5 × 103Vacuumized again after Pa, treat vacuum
Dry clean air is passed through again after reaching 10~100Pa, blow-on taking-up uranium zircaloy ingot after so repeatedly 2~5 times.
One embodiment of the quick recovery process of uranium zircaloy chip according to the present invention, smelting temperature room temperature~
(0.6-0.7)TIt is moltenPreceding continuous improvement heating power, (0.6-0.7) TIt is molten~TIt is moltenKeep heating power constant, uranium zircaloy after fusing
The temperature of chip is maintained at 1.05TIt is molten~1.1TIt is molten。
The present invention carries out melting recycling using microwave heating to the chip of uranium zircaloy, and the rate of heat addition is fast, molten with other
Refining mode is compared with device, be can obviously reduce heating using power and will be reduced more than half the time required to melting, therefore can subtract
The waste of few energy, reduces pollution caused by uranium zircaloy removal process.In addition, present invention design is simple, have well
Heating and heat-insulating property, heating crucible, auxiliary thermosphere and muff materials are easy, and preparation price is relatively low, the resistance to urgency in fusion process
Cold anxious heat, security are preferable.The method of the present invention and device can not only meet the melting recycling of uranium zircaloy chip, be also applied for it
The waste recovery and alloying smelting of his metal material, have the wider scope of application.
Brief description of the drawings
Fig. 1 shows the structure of the Rapid recovery device of uranium zircaloy chip according to an illustrative embodiment of the invention
Schematic diagram.
Fig. 2 shows the knot of the Rapid recovery device of the uranium zircaloy chip of another exemplary embodiment according to the present invention
Structure schematic diagram.
Description of reference numerals：
10- heating crucibles, 20- muffs, 21- sleeves, 22- head covers, 23- thermometer holes, the auxiliary thermospheres of 30-, 31-ZrO2
Grain, 32- recrystallization SiCs piece, 40- uranium zircaloy chips.
Embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine in any way.
Any feature disclosed in this specification, unless specifically stated, can be equivalent by other or with similar purpose
Alternative features are replaced.I.e., unless specifically stated, each feature is an example in a series of equivalent or similar characteristics
.
Microwave is heated as a kind of mode of heating of clean environment firendly, has potential engineer application valency in Metal Melting field
Value.In traditional melting mode, the mode of heating of material based on heat transfer, thermal convection current and heat radiation, the efficiency of heating surface it is low and
Substantial amounts of energy waste can be caused, microwave heating is different from conventional method from principle, it is in microwave field by dielectric material
In polarization loss carry out overall heating, heat results from material internal rather than from external heat source, therefore fusion process
In can obtain higher heating efficiency, material homogeneous heating and microwave heating equipment is simple in structure can significantly reduce and put
Pollution problem during penetrating property material recovery.But due to metallic reflection microwave (under room temperature microwave in a metal penetrate depth
Degree is only 1~10 μm), it is therefore desirable to by the research and development for carrying out special purpose device and rational technological design, it can just make such as uranium zirconium
The microwave melting of the metals such as alloy chip is possibly realized.
The present invention is devised for uranium zircaloy for the particularity of uranium Zirconium alloy material and raising smelting efficiency etc.
The device and technique that chip is quickly recycled, be both remarkably improved the melting organic efficiency of uranium zircaloy chip, and can also reduce spy
Environmental pollution caused by material removal process.
Uranium zircaloy chip of the present invention is the strip or broken produced in the machining process of uranium zircaloy part
Chip scrap.
First the structure and principle of the Rapid recovery device of uranium zircaloy chip of the present invention are described in detail below.
Fig. 1 shows the structure of the Rapid recovery device of uranium zircaloy chip according to an illustrative embodiment of the invention
Schematic diagram, Fig. 2 show the knot of the Rapid recovery device of the uranium zircaloy chip of another exemplary embodiment according to the present invention
Structure schematic diagram.
As illustrated in fig. 1 and 2, exemplary embodiment according to the present invention, the Rapid recovery device of the uranium zircaloy chip
It is used cooperatively with microwave high-temperature high vacuum furnace, i.e., uranium zirconium is carried out together with microwave high-temperature high vacuum furnace by the Rapid recovery device
The recycling melting of alloy cutting.
Specifically, which includes heating crucible 10, muff 20 and is filled in heating crucible 10 and insulation
Set 20 between auxiliary thermosphere 30, heating crucible 10 be made of recrystallization SiC ceramics and inner surface coated with calcium zirconate coating to prevent
Only melting material reacts with crucible, and muff 20 is by Al2O3It is made, auxiliary thermosphere 30 is by ZrO2Particle or recrystallization SiC piece group
Into.Wherein, heating crucible 10 is used to contain and melting uranium zircaloy chip, muff 20 are protected for being realized in fusion process
Temperature, auxiliary thermosphere 30 then play Accelerate Crucible and the effect of uranium zircaloy chip heating.
The Rapid recovery device universality of said structure and material is stronger, has good heating and heat-insulating property, heating
Crucible 10, auxiliary thermosphere 30 and muff 20 are drawn materials easily and preparation price is relatively low, the resistance to rapid heat cycle in fusion process, safety
Property is preferable, is advantageously implemented the microwave melting of metal.Wherein, the good material of heating crucible selection absorbing property, can make melting
Heating whole device at initial stage has higher heating rate；It is good using absorbing property but the heating effect of heating crucible is limited
Auxiliary thermosphere can further improve smelting efficiency；Muff may insure heating crucible and the heating effect of uranium zircaloy chip,
Its requirement is not only to have may pass through muff with thermal insulation but also with wave, microwave and acted on heating crucible therein and chip
On.
Wherein, muff 20 includes sleeve 21 and head cover 22, after uranium zircaloy chip 40 is put into heating crucible 10,
Heating crucible 10 is put into the sleeve 21 of muff 20 and top cover 22 can carry out follow-up recycling.Preferably,
Thermometer hole 23 is provided with head cover 22, to facilitate the material to the inside to carry out infrared measurement of temperature.
According to a preferred embodiment of the invention, the ratio of the internal diameter of heating crucible 10 and wall thickness is 12:1~10:1, zirconic acid
The thickness of calcium coating is 0.05~0.15mm；The ratio of the outside diameter of heating crucible 10 and the internal diameter of muff 20 is 1:1.5~1:
2；The packed height of auxiliary thermosphere 30 is flushed with the top of heating crucible 10, ZrO2The granularity of particle 31 is 2~10mm, recrystallization
The thickness of SiC pieces is 5~15mm.
Invention also provides the quick recovery process of uranium zircaloy chip, which uses above-mentioned uranium zircaloy chip
Rapid recovery device carry out uranium zircaloy chip recycling.
Exemplary embodiment according to the present invention, it is chip cleaning which includes carrying out successively, shove charge, molten
Refine and come out of the stove.Wherein, present invention process it is crucial in fusion process by heating work(to microwave under higher vacuum
The regulation and control of rate improve melting organic efficiency and obtain preferable Smelting Effect.
Specifically, in the step of melting, it is higher than 5 × 10 in vacuum-2Microwave melting is carried out under the vacuum condition of Pa.Should
Fusion process includes following sub-step：
1) control heating power increases to maximum heating power Y with the speed of Y/10~Y/4W/min.In this sub-step,
Heating power, which is continuously increased, can accelerate fusion process, but increase cannot be too big, and otherwise device microwave reflection is more, causes power
Waste.
2) maximum heating power Y is kept, until the temperature of uranium zircaloy chip reaches TIt is molten.Wherein, maximum heating power Y
Size depends on specific melting material, and when device and the timing of material one, then Y value determines.
3) after uranium zircaloy chip is completely melt, control heating power is reduced to 0.6Y~0.8Y, and insulation 10~
30min, comes out of the stove to obtain uranium zircaloy ingot after being cooled to room temperature；Preferably, with the rate reduction heating power of 1/2Y~Y.Protecting
During temperature, the temperature of uranium zircaloy chip is maintained at 1.05T after fusingIt is molten~1.1TIt is molten.Absorbing property becomes after being melted due to material
Well, it is necessary to suitably reduce power to prevent melt heating excessive, wherein, the smelting temperature of material is generally more slightly higher than the fusing point of material
Some.
Wherein, TIt is moltenFor the fusing point of uranium zircaloy chip, DEG C；Y is maximum heating power, W；The internal diameter Ф of Y and heating crucible1
(mm) ratio is 10:1~100:1.
In the fusion process, present invention employs the three-stage load mode of power increase-stabilization-bust, and work as
When the temperature of uranium zircaloy chip is increased to 2/3 temperature of fusing point, it absorbs the ability of microwave and is remarkably reinforced, can be direct by microwave
Heat and then obtain higher smelting efficiency and preferable Smelting Effect.Thus, the above-mentioned melting mode rate of heat addition of the invention
It hurry up, can obviously reduce heating and use power, more than half will be reduced the time required to melting, therefore the waste of the energy and drop can be reduced
Pollution caused by during low uranium zircaloy chip recycling.Due to metal microwave reflection at low temperature, can not be heated by microwave,
Therefore needing to design special frock makes it possible metallic microwave melting.Muff is using material that is adiabatic, not absorbing microwave, temperature
Microwave transparent muff heats heating crucible and metal when spending relatively low；Heating crucible is using the ceramic material for caning absorb microwave
Material.Melting chip at initial stage does not absorb microwave, microwave heating heating crucible and auxiliary hot material, the heating of uranium zircaloy chip mainly according to
Heat transfer and heat radiation by crucible material, after temperature rise, metal material absorbs the enhancing of microwave ability, it can be straight by microwave
Connect and heat and there is the higher efficiency of heating surface.
Preferably, in the step of chip is cleaned, using buck, trichloro ethylene, alcohol three passage cleaning ways to uranium
Zircaloy chip is cleaned and is pressed into uranium zircaloy chip group after the chip of uranium zircaloy is dried after the washing.Wherein, alkali
Diluted NaOH aqueous solutions may be selected in water.
In the step of shove charge, uranium zircaloy chip group is fitted into the heating crucible 10 of Rapid recovery device, will be quick
Retracting device is put into microwave high-temperature high vacuum furnace (not shown), is vacuumized after closing stove and (is utilized vacuum pump) to vacuum and reach 5
×10-2More than Pa.
In the step of coming out of the stove, after uranium zircaloy ingot is cooled to room temperature, it is passed through dry clean air (unlatching vent valve) and treats
Vacuum is less than 5 × 103Vacuumized again after Pa, being passed through dry clean air again after vacuum reaches 10~100Pa, (unlatching is put
Air valve), after so repeatedly 2~5 times blow-on take out uranium zircaloy ingot.Since uranium zircaloy has a radioactivity, in melting rear hearth
With the presence of harmful substance, the harmful substance removal in stove injures people's generation to avoid during blow-on after taking out vacuum several times repeatedly.
It is to be understood that the above embodiment and following embodiments that the present invention is described in detail are merely to illustrate the present invention rather than limit
The scope of the present invention processed, some nonessential improvement and tune that those skilled in the art's the above according to the present invention is made
It is whole to belong to protection scope of the present invention.
The Rapid recovery device and technique of uranium zircaloy chip of the present invention are made furtherly with reference to specific embodiment
It is bright.
Embodiment 1：
The present embodiment uses shown in Fig. 1 and quick time of Rapid recovery device progress uranium zircaloy chip as described above
Receipts processing, does not repeat structure herein.
Quick recovery process comprises the following steps：
(1) chip is cleaned：Uranium zircaloy (U-0.65Zr) chip is taken, is respectively cleaned successively with buck, trichloro ethylene and alcohol
One time, drying in drying oven is put into after removing surface oil stain and dirt, and clean chip is pressed into 80 × 40mm of Ф with press
Uranium zircaloy chip group.
(2) shove charge：Using Fig. 1 devices, the uranium zircaloy chip group pressed is put into heating crucible, heating crucible it is interior
Footpath Ф1It is 8mm (i.e. outside diameter Ф for 80mm and wall thickness2For 96mm), crucible is placed in muff center position, muff internal diameter Ф3For
150mm, is put into ZrO in the gap between muff and heating crucible2Its height is simultaneously added to and heating crucible top by particle
End flushes.Then whole device is put into microwave high-temperature high vacuum furnace, stove is closed and vacuumizes, until vacuum reaches 5 × 10- 2More than Pa.
(3) melting：Microwave power supply is opened, control heating power is with the speed increase of 400W/min, uranium zircaloy chip group
Temperature rise to 850 DEG C of (2/3TIt is molten), the maximum heating power used is 1800W, keeps power constant after increasing to 1800W, uranium
The temperature of zircaloy chip group continues to raise, the melting temperature until reaching uranium zircaloy, controls and adds after material is completely melt
Thermal power is down to 1200W and finely tunes power, and the melting material temperature degree that the chip of uranium zircaloy is rolled into a ball after fusing is maintained at 1310 DEG C
(1.05TIt is molten), after keeping the temperature 15min, microwave power is unloaded with the speed of 900W/min.
(4) come out of the stove：After uranium zircaloy ingot is cooled to room temperature, opens vent valve and be passed through a certain amount of dry clean air, treat vacuum
Spend to 5 × 103After Pa, open vacuum pump and vacuumize, vent valve is reopened after vacuum to 50Pa and continues to be passed through dry clean
Air, after so repeatedly 4 times blow-on obtain uranium zircaloy ingot.
Embodiment 2：
The present embodiment uses shown in Fig. 2 and quick time of Rapid recovery device progress uranium zircaloy chip as described above
Receipts processing, does not repeat structure herein.
Quick recovery process comprises the following steps：
(1) chip is cleaned：Uranium zircaloy chip is taken, with respectively cleaning one time of buck, trichloro ethylene and alcohol, removes surface oil
Drying in drying oven is put into after stain and dirt, and clean chip is pressed into the uranium zircaloy chip of 100 × 50mm of Ф with press
Group.
(2) shove charge：Using Fig. 2 devices, the uranium zircaloy chip group pressed is put into recrystallization SiC crucible, heats earthenware
The internal diameter Ф of crucible1It is 10mm for 100mm and wall thickness, crucible is placed in muff center position, muff internal diameter Ф3For 200mm,
Recrystallization SiC piece is put into gap between muff and heating crucible, wherein, two layers totally of recrystallization SiC piece, thickness in monolayer is
12mm.Whole device is put into microwave high-temperature high vacuum furnace, stove is closed and vacuumizes, until vacuum reaches 5 × 10-2Pa with
On.
(3) melting：Microwave power supply is opened, control heating power is with the speed increase of 600W/min, uranium zircaloy chip group
Temperature rise to 850 DEG C of (2/3TIt is molten), the maximum heating power used is 2400W, and holding 2400W power is constant, and uranium zircaloy is cut
The temperature of bits group continues to raise, the melting temperature until reaching uranium zircaloy, and heating power drop is controlled after material is completely melt
To 1800W and power is finely tuned, the melting material temperature degree that the chip of uranium zircaloy is rolled into a ball after fusing is maintained at 1310 DEG C of (1.05TIt is molten), insulation
After 10min, microwave power is unloaded with the speed of 1200W/min.
(4) come out of the stove：After uranium zircaloy ingot is cooled to room temperature, opens vent valve and be passed through a certain amount of dry clean air, treat vacuum
Spend to 8 × 103After Pa, open vacuum pump and vacuumize, vent valve is reopened after vacuum to 20Pa and continues to be passed through dry clean
Air, after so repeatedly 3 times blow-on obtain uranium zircaloy ingot.
In addition, inventor carries out uranium zircaloy also to conventional induction melting uranium zircaloy chip and using the present invention program
The experiment parameter of chip melting is contrasted, and the results are shown in Table 1.
The conventional induction melting of table 1 and the experiment parameter of microwave melting of the present invention contrast
Note：Wherein microwave melting uses device 1, concrete technology for given in embodiment 1, induction melting crucible size with it is micro-
Ripple melting kettle is identical.
As shown in Table 1, the present invention carries out melting recycling, the rate of heat addition using microwave heating to the chip of uranium zircaloy
Hurry up, compared with other melting modes and device, can obviously reduce heating using power and will reduce the time required to melting half with
On, therefore the waste of the energy can be reduced, reduce pollution caused by uranium zircaloy removal process.
Also, present invention design is simple, has good heating and heat-insulating property, heating crucible, auxiliary thermosphere and muff
Materials are easy, and preparation price is relatively low, and resistance to rapid heat cycle, security are preferable in fusion process.The method of the present invention and device are not only
It can meet the melting recycling of uranium zircaloy chip, be also applied for the waste recovery and alloying smelting of other metal materials, have
The wider scope of application.
The invention is not limited in foregoing embodiment.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (8)
1. a kind of quick recovery process of uranium zircaloy chip, it is characterised in that using the quick recycling dress of uranium zircaloy chip
The recycling for carrying out uranium zircaloy chip is put, the Rapid recovery device is used cooperatively with microwave high-temperature high vacuum furnace, described quick
Retracting device includes heating crucible, muff and the auxiliary thermosphere being filled between the heating crucible and muff, wherein, it is described
Heating crucible is made of recrystallization SiC ceramics and inner surface is coated with calcium zirconate coating, and the muff is by Al2O3It is made, it is described
Auxiliary thermosphere is by ZrO2Particle or recrystallization SiC piece composition；
Chip cleaning that the technique includes carrying out successively, shove charge, melting and come out of the stove；
In the step of melting, it is higher than 5 × 10 in vacuum-2Microwave melting, including following sub-step are carried out under the vacuum condition of Pa
Suddenly：
Control heating power increases to maximum heating power Y with the speed of Y/10~Y/4W/min；
The maximum heating power Y is kept, until the temperature of uranium zircaloy chip reaches TIt is molten；
After uranium zircaloy chip is completely melt, control heating power is reduced to 0.6Y~0.8Y, keeps the temperature 10~30min, cooling
Come out of the stove to obtain uranium zircaloy ingot after to room temperature；
Wherein, TIt is moltenFor the fusing point of uranium zircaloy chip, DEG C；Y is maximum heating power, W；The internal diameter Ф of Y and heating crucible1(mm)
Ratio be 10:1~100:1.
2. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that the muff includes set
Cylinder and head cover, are provided with thermometer hole on the head cover.
3. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that the heating crucible it is interior
The ratio of footpath and wall thickness is 12:1~10:1, the thickness of the calcium zirconate coating is 0.05~0.15mm.
4. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that outside the heating crucible
The ratio of the internal diameter of footpath and muff is 1:1.5~1:2.
5. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that the filling of the auxiliary thermosphere
Height is flushed with heating crucible, the ZrO2The granularity of particle is 2~10mm, and the thickness of recrystallization SiC piece is 5~15mm.
6. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that chip is cleaned the step of
In, using buck, trichloro ethylene, alcohol three passage cleaning ways the chip of uranium zircaloy clean and after the washing will
Uranium zircaloy chip group is pressed into after uranium zircaloy chip drying；In the step of shove charge, the uranium zircaloy chip is rolled into a ball and is loaded
In the heating crucible of Rapid recovery device, Rapid recovery device is put into microwave high-temperature high vacuum furnace, is vacuumized after closing stove.
7. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that in the step of coming out of the stove,
After uranium zircaloy ingot is cooled to room temperature, it is passed through dry clean air and treats that vacuum is less than 5 × 103Vacuumize, treat true again after Pa
Reciprocal of duty cycle is passed through dry clean air again after reaching 10~100Pa, blow-on taking-up uranium zircaloy ingot after so repeatedly 2~5 times.
8. the quick recovery process of uranium zircaloy chip according to claim 1, it is characterised in that smelting temperature room temperature~
(0.6-0.7)TIt is moltenPreceding continuous improvement heating power, (0.6-0.7) TIt is molten~TIt is moltenKeep heating power constant, uranium zircaloy after fusing
The temperature of chip is maintained at 1.05TIt is molten~1.1TIt is molten。
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| US5421855A (en) * | 1993-05-27 | 1995-06-06 | The United States Of America As Represented By The United States Department Of Energy | Process for continuous production of metallic uranium and uranium alloys |
| CN1119921C (en) * | 2000-04-28 | 2003-08-27 | 清华大学 | High-uniformity multimode microwave cavity for ceramic processing |
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