CN106753346A - Nitrogen oxide phosphor and light emitting device using the same - Google Patents

Nitrogen oxide phosphor and light emitting device using the same Download PDF

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CN106753346A
CN106753346A CN201510821446.5A CN201510821446A CN106753346A CN 106753346 A CN106753346 A CN 106753346A CN 201510821446 A CN201510821446 A CN 201510821446A CN 106753346 A CN106753346 A CN 106753346A
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phosphor
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inorganic compound
emitting device
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CN201510821446.5A
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徐会兵
刘荣辉
陈凯
张霞
庄卫东
刘元红
刘玉柱
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有研稀土新材料股份有限公司
北京有色金属研究总院
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Abstract

The invention provides a phosphor. The phosphor comprises an inorganic compound. The inorganic compound at least contains Si, Al, O, N and Eu and is characterized in that the inorganic compound further contains one or both of elements B and C and has a crystal structure the same to that of Si5AlON7. The invention also provides a light emitting device prepared from the phosphor. The light emitting device can be used in white LED devices and especially in a wide color gamut LCD display LED backlight device. The light emitting device has good use effects such as high luminous efficiency and a wide color gamut display range.

Description

氮氧化物荧光体及其发光器件 Oxynitride phosphor and the light emitting device

技术领域 FIELD

[0001] 本发明属于发光材料领域,具体涉及一种用于白光LED的氮氧化物荧光体;尤其涉及一种与Si5AlON7晶体结构相同的氮氧化物荧光体及其发光器件。 [0001] The present invention belongs to the field of luminescent materials, particularly to white LED for oxynitride phosphor; and more particularly to a crystal structure the same Si5AlON7 oxynitride phosphor and the light emitting device.

背景技术 Background technique

[0002] 白光LED具有绿色、环保、长寿命等优势,已经在照明和显示领域得到广泛应用。 [0002] The white LED with a green, environmentally friendly, long-life and other advantages, have been widely used in lighting and display applications. 目前,白光LED主要是以蓝光芯片配合荧光粉的实现方式为主,因而荧光粉的发光性能直接影响并决定着白光LED器件的照明和显示性能。 At present, mainly white LED with blue chip implementations based phosphor, the phosphor luminescence and thus directly affect and determine the performance of the illumination and white LED display device.

[0003] 近年来,一类新型的氮化物/氮氧化物发光材料被开发出来,其中,具有塞隆结构的Eu离子激活的荧光粉备受关注。 [0003] In recent years, a new class of nitride / oxynitride luminescent material have been developed, in which Eu ions having a sialon phosphor activated configuration of concern. 例如,用Eu离子激活的Si6 ZA1Z0ZNS z:xEu(简称:β型塞隆荧光粉,〇< ζ < 4. 2,0. 0005 < X < 0. 5)能够被紫外光至蓝光波长的大范围波长区域内的光激发。 For example, activated with Eu ions Si6 ZA1Z0ZNS z: xEu (abbreviation:. Β-sialon phosphor, square <ζ <4. 2,0 0005 <X <0. 5) can be ultraviolet to blue wavelength range greater photoexcitation in the wavelength region. 发射峰值的波长为520-545nm,半高宽约为50nm左右。 Emission peak wavelength is 520-545nm, a half-height width of about 50nm. 这种β型塞隆荧光粉具有高的光效和窄的半高宽,从而导致其在液晶显示背光源领域,尤其是在广色域液晶显示领域得到广泛应用。 This β-sialon phosphor has high luminous efficiency and a narrow FWHM, causing it to backlight the liquid crystal display art, especially in the wide color gamut of the liquid crystal display fields are widely used. 长时间以来,国内外研究者对这类荧光粉的结构和发光性能等进行了持续深入的研究。 Since a long time, domestic and foreign researchers on structure and optical properties of these phosphors such as continued in-depth study was carried out.

[0004] 中国专利申请CN200680016345.X公开了一种β型塞隆陶瓷荧光体,其由通式Si6 zAlz0zNSz所示的β型塞隆陶瓷为母体材料、且固溶Eu作为发光中心的β型塞隆陶瓷构成,所述通式中的组成ζ为0. 24〜0. 42,且Eu含量为0. 05原子% -0. 25原子%。 [0004] Chinese Patent Application CN200680016345.X discloses a β-type sialon phosphor represented by the β-type sialon of formula Si6 zAlz0zNSz the parent material, and a solid solution of Eu as the luminescent center plug type β Long ceramic composition of the general formula ζ 0. 24~0. 42, and Eu content is 0.05 atomic% -0. 25 atomic%. 中国专利申请CN200780021389. 6公开的荧光粉为β -sialon结构,激活剂为Eu离子,该粉末通过激光衍射散射法测定的粒径分布为:累计分数中的10%粒径(D1J为7-20 μπκ且90% 粒径(DJ 为50-90 μm。此外,中国专利申请CN201080003227. 1、CN201180028320. 2 和CN201180029917. 9等也对β -sial〇n:Eu荧光粉的发光性能参数的限定、制备方法等方面作了详细介绍。然而,上述β型塞隆荧光粉的光效和半高宽仍然不能让人满意;同时所制成的器件的发光效率和色域显示色域不能满足应用需要。 In China Patent Application No. CN200780021389 6 is β -sialon phosphor disclosed structure, the activator is Eu ion, the powder diffraction scattering method was measured by a laser particle size distribution: 10% cumulative particle size fraction of (D1J 7-20 μπκ and 90% diameter (DJ of 50-90 μm addition, China Patent application No. CN201080003227 1, CN201180028320 2 and CN201180029917 9, also of β -sial〇n:.... luminescent performance parameters defined Eu phosphor prepared aspect of a method described in detail, however, the above-described β-sialon phosphor luminous efficiency and FWHM are still not satisfactory; while the luminous efficiency and color gamut of a display device made of a color gamut can not meet the application needs.

发明内容 SUMMARY

[0005] 本发明的目的之一在于提供一种在蓝光激发下能够发出绿光的氮氧化物荧光体。 [0005] One object of the present invention is to provide a blue emitting green light under the excitation oxynitride phosphor. 本发明的目的之二在于提供含有该荧光体的发光器件。 The object of the present invention is to provide two light-emitting device comprising the phosphor.

[0006] 为了实现上述目的,发明人对i3-sial〇n:Eu氮氧化物进行了深入研究,结果发现,Eu元素的固溶量、β-sialon基质的组成以及微量的掺杂元素对荧光体的发光特性会产生很大影响。 [0006] To achieve the above object, the inventors i3-sial〇n: Eu oxynitride conducted intensive studies and found that a solid solution amount of Eu element, the substrate β-sialon composition, and trace amounts of doping elements fluorescence body light emission characteristics can have a significant impact. 因此,当上述参数控制在特定范围内后,可以获得具有高光效和窄半高宽的氮氧化物荧光体。 Thus, when the above-described control parameters in a specific range can be obtained with high luminous efficiency and a narrow FWHM of the oxynitride phosphor.

[0007] 为此,根据本发明的第一方面,提供了一种荧光体,包含无机化合物,所述无机化合物至少含有元素Si、Al、0、N和EU,并且所述无机化合物进一步含有元素B、C中的一种或者两种,并且具有与Si5AlON7相同的晶体结构。 [0007] To this end, according to a first aspect of the present invention, there is provided a phosphor comprising an inorganic compound, the inorganic compound containing at least the elements Si, Al, 0, N, and the EU, and the inorganic compound further containing an element B, C is one or two, and has the same crystal structure Si5AlON7.

[0008] 优选地,所述无机化合物的组成为:Si6 ZA1AN8 ACnNk: xEu,满足以下条件: 0· 10 彡Z 彡0· 6,0· OOOl 彡X 彡0· 1,0 < k 彡0· 1,0 彡m 彡0· 05,0 彡η 彡0· 05,其中m 和η不同时为0 ;并且具有与Si5AlON7相同的晶体结构。 [0008] Preferably, the composition of the inorganic compound is: Si6 ZA1AN8 ACnNk: xEu, the following conditions are satisfied: Z San 0 · 10 0 · 6,0 · OOOl San San San X 0 · 1,0 <k 0 · San 1,0 m San San San η 0 · 05,0 · 05 San 0, wherein m and η are not simultaneously 0; and has the same crystal structure and Si5AlON7.

[0009] 其中,ζ优选0· 10彡ζ彡0· 50,进一步优选0· 15彡ζ彡0· 45,最优选0· 20$ ζ < 40。 [0009] wherein, [zeta] [zeta] San preferably 0 · 10 0 · 50 San, more preferably from 0 · 15 0 · 45 San San [zeta], most preferably 0 · 20 $ ζ <40. X 优选0· 0003 < X < 08,进一步优选0· 0005 < X < 05,更优选0· 001 彡X 彡0· 05,最优选0· 001 彡X 彡0· 02。 X is preferably 0 · 0003 <X <08, more preferably 0 · 0005 <X <05, more preferably 0 · 001 Pie Pie X 0 · 05, 0 · 001 and most preferably Pie Pie X 0 · 02.

[0010] 优选地,0 < η彡0· 02,更优选为0 < η彡0· 015。 [0010] Preferably, 0 <η San 0 · 02, more preferably 0 <η 0 · 015 San.

[0011] 优选地,0 < π!彡0· 02,更优选为0 < π!彡0· 015。 [0011] Preferably, 0 <π! San 0 · 02, more preferably 0 <π! San 0 · 015.

[0012] 优选地,所述无机化合物同时含有B和C,且0<π!彡0. 015,0<r!彡0. 015。 [0012] Preferably, the inorganic compound containing both B and C, and 0 <π! San 0. 015,0 <r! San 0.015.

[0013] 优选地,0 < k彡0· 05,更优选为0· 004彡k彡0· 04。 [0013] Preferably, 0 <k San 0.05, more preferably 0 · 004 to 0 · 04 San San k.

[0014] 在一个更优选的实施方式中,所述无机化合物的组成为:Si6 ZA1Z0ZNS zBmCnNk:xEu, 满足以下条件:〇· 20 彡z 彡0· 40,0· 001 彡X 彡0· 02,0· 004 彡k 彡0· 04,0 < η 彡0· 015, 0 < r!彡0. 015 ;并且具有与Si5AlON7相同的晶体结构。 [0014] In a more preferred embodiment, the composition of the inorganic compound is: Si6 ZA1Z0ZNS zBmCnNk: xEu, satisfying the following conditions: 20 square San · z · 40,0 · 001 0 San San San 0.5 X 02, k 0 · 004 San San 0 · 04,0 <η San 0 · 015, 0 <r San 0.015;! and has the same crystal structure and Si5AlON7.

[0015] 优选地,所述无机化合物的一次粒径满足以下条件:30 μm < D5qS 60 μm,且长径比大于2。 [0015] Preferably, the primary particle diameter of the inorganic compound satisfy the following conditions: 30 μm <D5qS 60 μm, and an aspect ratio greater than 2.

[0016] 优选地,所述无机化合物中Fe、Co、Ni的杂质含量总和不大于50ppm。 [0016] Preferably, the inorganic compound Fe, Co, Ni the total impurity content is not more than 50ppm.

[0017] 优选地,所述荧光体的发光色坐标y满足以下条件:0.60 < y < 0.68,优选为0. 62 彡y 彡0. 67。 [0017] Preferably, the luminescent color of the phosphor y coordinates satisfy the following condition: 0.60 <y <0.68, preferably 0.62 y San San 0.67.

[0018] 根据本发明的第二方面,提供了一种发光器件,该发光器件包含上述荧光体。 [0018] According to a second aspect of the present invention, there is provided a light emitting device, the light-emitting device comprising the phosphor.

附图说明 BRIEF DESCRIPTION

[0019] 图1实施例1荧光体的XRD图谱。 XRD pattern of the phosphor according to Example 1 [0019] FIG.

[0020] 图2实施例1荧光体的SEM图。 [0020] FIG SEM image of Example 1 phosphor of Embodiment 2.

[0021] 图3实施例1荧光体的激发和发射光谱。 [0021] FIG excitation and emission spectra of the phosphor of Example 1.

具体实施方式 Detailed ways

[0022] 发明所述的目的/或方案将以优选实施方式的形式给出。 [0022] The preferred embodiment will form object / or the embodiment of the present invention are given. 对这些实施方式的说明用于帮助对本发明的理解,而非限制其它可行的实施方式,这些可行的其它实施方式可由对本发明的实践得知。 These embodiments are described to aid in understanding of the present invention, not to limit other possible embodiments, these other possible embodiments may be learned by practice of the invention. 以下,参照附图详细说明本发明的代表性实施方式。 Hereinafter, the detailed description of representative embodiments of the present invention with reference to the accompanying drawings.

[0023] 首先,说明本发明的荧光体。 [0023] First, the phosphor of the present invention.

[0024] —种荧光体,包含无机化合物,所述无机化合物至少含有元素Si、Al、0、N和EU,其特征在于,所述无机化合物进一步含有元素B、C中的一种或者两种,并且具有与Si5AlOrMB 同的晶体结构。 [0024] - species phosphor comprising an inorganic compound, the inorganic compound contains an element Si, Al, 0, N, and at least EU, wherein said inorganic compound further contains the elements B, or both of one C and having the same crystal structure Si5AlOrMB.

[0025] 上述荧光体中,其包含无机化合物,所述无机化合物至少含有元素Si、A1、0、N 和Eu,且进一步含有元素B和C中的一种或者两种,更主要的是,上述无机化合物具有与Si5AlON^同的晶体结构。 [0025] In the phosphor, comprising an inorganic compound, the inorganic compound containing at least the elements Si, A1,0, N and Eu, and further comprising one or two elements B and C, more importantly, the inorganic compound having the same crystal structure Si5AlON ^. 其中,Si #10队的晶体结构与Si 3N4晶体结构相同,PDF卡片号为:PDF#48-1615 ;与Si3N4相比,Si 5A10N7只是在XRD衍射角上有微小偏移(XRD测试采用Co靶),并且部分衍射峰强度会有略微变化,具体的晶体结构数据如下: Wherein the same crystal structure as Si # 10 team and 3N4 crystal structure Si, PDF card number: PDF # 48-1615; compared with Si3N4, Si 5A10N7 only minor shifts in the XRD diffraction angle (XRD test uses Co target ), and part of diffraction peak intensity will vary slightly, the specific crystal structure data is as follows:

[0026] 表I Si5AlON^ X射线衍射结果(Co靶) [0026] TABLE I Si5AlON ^ X-ray diffraction (Co target)

Figure CN106753346AD00051

Figure CN106753346AD00061

[0027] 在上述荧光体中,所述无机化合物的组成为:Si6 ZA1Z0ZNS A1CnNk = XEu,满足以下条件:0· 1 彡z 彡0· 6,0· 0001 彡X 彡0· 1,0 < k 彡0· 1,0 彡m 彡0· 05,0 彡η 彡0· 05,其中m 和η不同时为0 ;并且具有与Si5AlON7相同的晶体结构。 [0027] In the phosphor, the composition of the inorganic compound is: Si6 ZA1Z0ZNS A1CnNk = XEu, meet the following criteria: 0 · 1 · 0 6,0 San San z · 0001 San San X 0 · 1,0 <k San San 0.5 1,0 0.5 05,0 m San San San η 0.05, where m and η are not simultaneously 0; and has the same crystal structure and Si5AlON7.

[0028] 除了含有Si、Al、0、N四种元素之外,所述无机化合物还进一步含有元素B和C中的一种或者两种元素。 [0028] In addition to containing Si, Al, 0, N four elements, said inorganic compound further comprises an element B, and C, or both elements. 少量的B元素和/或C元素的加入对荧光体的发光性能提升有较大帮助。 Add a small amount of element B and / or C to the light emitting element to enhance the performance of the phosphor is of great help. 例如,低熔点的B元素有利于强化焙烧,在不改善发光材料颗粒大小及分布的前提下能够降低焙烧温度,且使得该发光材料具有高的发光效率和良好的温度特性。 For example, B has a low melting point elements help strengthen fired, without luminescent material particles to improve the size and distribution of the firing temperature can be reduced, and such that the light emitting material having high luminous efficiency and excellent temperature characteristics. 此外,B的掺杂量必须控制在合适的范围内。 Further, the doping amount of B must be controlled within an appropriate range. 过量的B会引起晶格畸变,反而对荧光体的发光效率不利,因此B的掺杂量为:0< m < 0. 05。 Excess B causes lattice distortion, but negative emission efficiency of the phosphor, so the doping amount of B is: 0 <m <0. 05. 此外,C元素能够提供一种还原气氛,有利于稳定发光中心Eu2+的价态,防止被还原的Eu 2+再次转化成Eu 3+,从而损害其发光效率。 In addition, C elements can be provided a reducing atmosphere conducive to the stability of Eu2 + luminescent centers valence state of Eu 2+ is reduced to prevent the re-converted to Eu 3+, to the detriment of luminous efficiency. 但是当C含量超过一定数值时,会污染发光材料,不仅影响体色,光效也大幅下降,因此,C的掺杂量为: 0 η 0. 05〇 However, when the C content exceeds a certain value, would pollute the luminescent material, not only affects the body color, luminous efficiency is also greatly decreased, and therefore, the doping amount of C is: 0 η 0. 05〇

[0029] 在本发明的氮氧化物荧光体中,Eu2+元素固溶于Si 6 ZA1Z0ZNS ζ的难易性与ζ值关系密切,ζ值的取值范围为:0. 1彡ζ彡0. 6。 [0029] In the oxynitride phosphor of the present invention, Eu2 + in a solid solution elements Si 6 ZA1Z0ZNS ζ and the ease with which the value [zeta] close range value [zeta] is: [zeta] 0 1 San San 0.6 . 当ζ值小于0. 1时,由于Eu2+元素的固溶量有限,导致获得的荧光体的亮度较低。 When ζ value is less than 0.1, due to the limited amount of solid solution elements Eu2 +, resulting in lower luminance of the phosphor obtained. 随着ζ值升高,为了获得这种Si6 ZA1Z0ZNS ζ: xEu荧光体, 就必须增加原料中的SiOjP Al 203,但是上述化合物在低于合成温度时会形成液相,促进粒子间的烧结,不利于目标相荧光体的形成。 With the increased value [zeta], in order to obtain this Si6 ZA1Z0ZNS ζ: xEu phosphor must be increased feedstock SiOjP Al 203, but at less than the above compounds will form a liquid phase synthesis temperature to promote sintering between particles is not conducive to the formation of the phosphor objectives. 当z值大于0. 6时,SiO2量和/或Al 203量增加过多,在合成的过程中,这些物质与作为Eu原料源的Eu2O3之间会形成稳定的化合物,从而阻碍充足的Eu固溶于荧光体中。 When the value of z is greater than 0. 6, SiO2 amount and / or Al 203 increased too much, during the synthesis, the stable compound formed between these substances and Eu2O3 as raw material source, Eu, an Eu thereby hindering sufficient solid dissolved phosphor. z优选0. 10彡z彡0. 50,进一步优选0. 15彡z彡0. 45, 最优选〇· 15彡z彡0· 40。 z z San San preferably 0.10 0.50, more preferably 0.15 z San San 0.45, most preferably 3.15 square San San z 40 0.5.

[0030] 对于发光中心Eu元素而言,通过多次实验发现,Eu元素的X值取值范围为: 0. 0001彡X彡0. 1。 [0030] For Eu luminescent center element, the discovery by many experiments, the value of X is in the range of Eu elements: 0.0001 X San San 0.1. 当Eu含量X值小于0. 0001时,溶入荧光体中的发光中心较少,因此发光亮度较低。 When Eu content is smaller than 0001 X 0.5, less dissolved emission center in the phosphor, the emission light luminance is low. 当X值大于〇. 1时,一方面,由于z值范围的限定,固溶入焚光体中的Eu元素的量是一定的,过多Eu元素的加入,反而使得部分Eu元素未参与反应,没有进入晶格,造成资源的浪费,另一方面,固溶入太多的Eu元素会因离子间距太小产生浓度猝灭效应,发光亮度反而随着Eu的增加而下降。 When the X value is greater than square. 1, on the one hand, since the range of z values ​​defined, the amount of Eu solid-dissolved elements burning light is constant, excessive addition of Eu element, but such that the unreacted portion of the element Eu , not into the crystal lattice, resulting in a waste of resources, on the other hand, too much of the dissolved solids will be too small to produce the element Eu concentration quenching effect due to ion spacing, but emission luminance decreases with the increase of Eu. X优选0. 0003彡X彡0. 08,进一步优选0. 0005彡X彡0. 05, 最优选0. 001彡X彡0. 05。 X X is preferably 0.0003 San San 0.08, more preferably 0.0005 X San San 0.05, most preferably 0.001 X San San 0.05.

[0031] 在一个优选的实施方式中,该无机化合物仅含有元素C。 [0031] In a preferred embodiment, the only element containing the inorganic compound C. 在本发明中的氮氧化物荧光体中,元素C的含量η的上限为0. 02。 In the oxynitride phosphor of the present invention, the content of the element of C η upper limit of 0.02. 微量元素C的存在有利于稳定荧光体发光中心Eu2+的价态,防止转化为Eu 3+而损害发光效率,更加明显的效果是能够与元素B和元素N形成BCN化合物,有利于发光效率的提升。 C in the presence of trace elements help stabilize the emission center of the phosphor Eu2 + valence state, and to prevent damage converted to Eu 3+ emission efficiency, the effect is more pronounced BCN capable of forming a compound with element B and element N, conducive to improve luminous efficiency . 但是当其含量η超过0. 02时会污染发光材料,不仅影响体色,反而光效也会下降。 But it will pollute the luminescent material when 0.02, not only affects the body color, but the luminous efficiency will decline when the content exceeds η. 更优选的是:〇< η < 0. 005。 More preferred are: square <η <0. 005.

[0032] 在另一个优选的实施方式中,该无机化合物仅含有元素Β。 [0032] In another preferred embodiment, the inorganic compound contains only elements Β. 例如,低熔点的元素B 有利于强化焙烧,在不改善发光材料颗粒大小及分布的前提下能够降低焙烧温度,且使得该发光材料具有高的发光效率和良好的温度特性。 For example, a low melting point element B help strengthen fired, without luminescent material particles to improve the size and distribution of the firing temperature can be reduced, and such that the light emitting material having high luminous efficiency and excellent temperature characteristics. 此外,元素B的引入要合适,应当与元素C和元素N的引入量相匹配,过量的元素B的引入会引起晶格畸变,反而对荧光体的发光效率不利。 In addition, the introduction of the element B to the right, should match the amount of the element introduced into the element C and N, the introduction of an excess of element B causes lattice distortion, but negative emission efficiency of the phosphor. 因此元素B的掺杂量为:0< m彡0. 02 ;更优选的范围为:0< m彡0. 005。 Therefore the doping amount of the element B is: 0 <m San 0.02; more preferably in the range: 0 <m San 0.005.

[0033] 在又一个优选的实施方式中,该无机化合物同时含有元素B和C。 [0033] In a further preferred embodiment, the element containing both the inorganic compound B and C. 元素B和C的共同引入,不仅能够起到各自单独的作用效果,更重要的是元素B和C的共同加入能够与N2 形成BCN结构化合物,这种结构化合物中存在BC、BN、CN化学键,S卩BCN化合物中的三种元素间互相都发生了化学键结合,而非简单的化合物,这种简单的化合物为宽带隙半导体, 能够发出400-500nm间的发射峰。 Co-introduced elements B and C, not only can play their effects alone, more importantly, the combined addition of the elements B and C are capable of forming a compound with the structure of BCN N2, the presence of BC, BN, CN compound of the structure a bond, Jie BCN S between the three elements of each compound have undergone a chemical bond, rather than a simple compound, such as a simple compound wide band gap semiconductor capable of emitting an emission peak between 400-500nm. 此外,更为重要的是BCN化合物具有与BN相同的晶体结构,且β -sialon: Eu与Si3N4具有相同的晶体结构,再加上BN和Si 3N4本身具有相同的晶体结构,因此BCN化合物与β -sialon能够进行很好的固溶。 Further, more importantly BCN BN compound has the same crystal structure, and β -sialon: Eu having the same crystal structure as Si3N4, BN and Si 3N4 plus itself has the same crystal structure, and thus the compound beta] BCN -sialon can be a good solution. 而且,经过试验发现,BCN化合物掺入后,一方面能够使得Si6 ZA1Z0ZNS ζ晶体结构更加稳固,能够提升荧光体的稳定性;另一方面,发射出的400-500nm间的发射峰,能够增强Eu2+的激发强度,从而提升荧光体的发光性能。 Further, after the test was found, the BCN compound incorporation Si6 ZA1Z0ZNS ζ one hand enables a more stable crystal structure, it is possible to enhance the stability of the phosphor; on the other hand, the emission peak between 400-500nm emitted, Eu2 + can be enhanced excitation intensity, so as to enhance the emission properties of the phosphor. 综上所述,BCN化合物的加入对荧光体发光性能的提升大有益处。 In summary, the compounds of BCN added to enhance the luminescence properties of the phosphor great benefit. 但是掺入的元素B和C的量要互相匹配,以起到良好的效果,但是也不能太多,太多会引起晶格畸变,反而对荧光体的发光效率不利。 But the amount of the element B and C of incorporation to match each other to play a good effect, but not too much, too much can cause lattice distortion, but negative luminescence efficiency of the phosphor. 优选的范围是:〇< m彡0. 01,0 < η彡0. 01。 Preferred ranges are: square <m San 0. 01,0 <η San 0.01.

[0034] 此外,BCN化合物中除B、C、N元素外还含有一定量的0元素,B、N含量明显高于C 含量,说明得到了富Β、Ν的BCN化合物,其中的0主要来源于表面吸附氧和结构中尚未完全脱除的氧。 [0034] Further, in addition to the compound BCN B, C, N element also contains a certain amount of elements 0, B, N were significantly higher than the C content, it has been described rich Β, Ν the BCN compounds wherein the major source 0 adsorbed oxygen on the surface and structure of the oxygen has not been completely removed. 而且随着热解温度的升高,BCN化合物中的Β、Ν含量逐渐增大,C含量逐渐减小, 〇含量也随着结构氧的进一步脱除而明显减小,这样有利于高y值荧光体的合成。 And with increasing pyrolysis temperature, BCN compound Β, Ν content gradually increases, C decreases the content, content is square structure with the further removal of oxygen significantly reduced, so is conducive to a high value y synthesis of the phosphor.

[0035] 优选的是,该无机化合物的一次粒径30 μπι SD5。 [0035] Preferably, the primary particle diameter of the inorganic compound is 30 μπι SD5. 彡60 μπι,且长径比大于2。 San 60 μπι, and an aspect ratio greater than 2. 上述提到的一次粒径,指的是经过高温焙烧后,未经处理的荧光体通过激光粒度仪测试的粒径。 The above-mentioned primary particle size, refers to a high temperature after calcination, the untreated phosphor particle by a laser particle size analyzer test. 如果该无机化合物荧光体的粒径过小,被荧光体表面反射而成为散射光的比例就会增加,即被荧光体吸收的激发光减少,因此其产生的荧光强度也会降低,进而影响其发光器件的性能,而如果将该无机化合物荧光体的粒径增大的话,在照明器具、发光器件等使用过程中,存在分散性变差、产生颜色不均的问题,因此优选为一次粒径30 μ m < DmS 60 μ m。 If the particle size of the inorganic compound phosphor is too small, reflected by the surface of the phosphor becomes the ratio of the scattered light increases, i.e., the excitation light absorbed by the phosphor is reduced, which produces the fluorescent intensity will be reduced, thereby affecting its the light emitting device performance, whereas if the particle diameter of the inorganic compound phosphor is increased, then the use of the lighting fixture, the light emitting device or the like process, there is poor dispersibility, color unevenness problem, it is preferable for the primary particle diameter 30 μ m <DmS 60 μ m. 如果长径比太小,则晶粒的完整性差,也会影响荧光体的亮度,因此优选为长径比大于2。 When the aspect ratio is too small, then the integrity of the grain difference, will also affect the luminance of the phosphor, it is preferable for the aspect ratio greater than 2.

[0036] 优选的是,该无机化合物中Fe、Co、Ni的杂质含量总和不大于50ppm。 [0036] Preferably, the inorganic compound in the total impurity content of Fe, Co, Ni not more than 50ppm. 为了获得显示高发光亮度的荧光体,包含在本发明中的无机化合物中的杂质含量优选尽可能地小。 In order to obtain a phosphor exhibiting a high emission luminance, the content of impurities contained in the inorganic compound in the present invention is preferably as small as possible. 特别地,由于大量Fe、Co、Ni的杂质污染严重抑制荧光体的发光强度,因此优选的是通过原料杂质的控制以及控制合成步骤从而使得这些杂质元素的总和小于50ppm,从而能够提高荧光体的发光强度。 In particular, since a large number of Fe, Co, serious impurity contamination Ni suppressing emission intensity of the phosphor, it is preferable that the control and the synthetic steps are controlled feedstock impurities such that the sum of these impurity elements is less than 50 ppm, thereby improving the phosphor light intensity.

[0037] 优选的是,所述荧光体的发光色坐标y满足的条件为:0. 60彡y彡0. 68。 [0037] Preferably, the color coordinates of the light emitting condition of the phosphor satisfies y is: y 060 San San 0.68. 在用作白光LED显示用的荧光体中,绿色荧光体的色坐标y值直接决定白光LED显示器件的色域范围,要想获得显色色域NTSC)范围较高的白光LED器件,必须要求氮氧化物绿粉的色坐标满足以下条件:〇. 60 < y < 0. 68。 In the white LED is used as the phosphor used in the display, the color coordinate value y determined directly green phosphor white LED color gamut display device, in order to obtain the color gamut of NTSC) higher range of white LED devices, have required green color coordinate nitrogen oxide powder satisfies the following conditions: square 60 <y <0. 68.. 更优选的是:0. 62 < y < 0. 67。 More preferred are:. 0 62 <y <0. 67.

[0038] 下面,举例说明获得本发明的氮氧化物荧光体的制备方法。 [0038] Next, a preparation method for obtaining exemplified oxynitride phosphor of the present invention.

[0039] 原料可以是在本领域公知的制备方法中使用的原料,例如氮化硅(Si3N4)、氮化铝(AlN)、氧化娃(SiO2)、氧化错(Al2O3)。 [0039] The raw material may be used in the production method known in the art, such as silicon nitride (of Si3N4), aluminum nitride (AlN), baby oxide (SiO2), wrong oxide (Al2O3). 此外,发光中心Eu的原料选择的是Eu的金属、氧化物、碳酸盐或氮化物;B的原料选择的是单质B、BCl3S BN ;C的原料为C粉,也可以是炉膛内部挥发出的C粉。 In addition, the selected material is a light emission center Eu Eu metal, oxide, carbonate or nitride; raw material B is selected elemental B, BCl3S BN; powder raw material C is C, inside the furnace may be volatilized the C powder.

[0040] 按照Si6zAlz0zNSz·BnlCnNk:xEu(满足以下条件:0·l彡z彡0·6,0·0001 彡x彡0·l, 0<k<0. 1,0彡m彡0. 05,0彡η彡0. 05,其中m和η不同时为0)的化学计量比准确称取所需要的原料,混合均匀后放入BN坩埚内,在高温氮化炉内加热至1850-2300°C,保温5-20h,焙烧气氛为N2气氛,压力为0. 5-2MPa。 [0040] accordance Si6zAlz0zNSz · BnlCnNk: xEu (satisfy the following condition: 0 · l 0 · 6,0 San San z · x 0001 San San 0 · l, 0 <k <0 1,0 San San 0.05 m. San San 0.05 η 0 where η and m are not simultaneously 0) stoichiometric ratio was accurately weighed into the BN crucible after taking the required starting material, mixed and heated to a high temperature nitriding furnace at 1850-2300 ° C, holding 5-20h, firing atmosphere, N2 atmosphere, a pressure of 0. 5-2MPa. 加热温度低于1850°C时不能使Eu固溶在氮氧化物荧光体中。 Can not Eu is dissolved when the heating temperature is below 1850 ° C in nitrogen oxide phosphor. 若加热温度高于2300°C时,为了抑制原料及氮氧化物荧光体的分解,必须提供非常高的氮气压力。 If the heating temperature is above 2300 ° C, in order to suppress decomposition of the raw material and oxynitride phosphors, it must provide a very high nitrogen pressure.

[0041] 将合成的氮氧化物荧光体通过破碎、后处理,获得所需要的规定尺寸,即获得本发明的氮氧化物荧光体。 [0041] The oxynitride phosphor synthesized by crushing, post-treatment, to obtain a desired predetermined size, i.e., to obtain oxynitride phosphor of the present invention.

[0042] 根据本发明的第二方面,提供了一种发光器件,该发光器件至少包含上述所述的无机化合物。 [0042] According to a second aspect of the present invention, there is provided a light emitting device, the light-emitting device comprising at least an inorganic compound described in the above. 该发光器件,还包括辐射源。 The light emitting device further comprises a radiation source. 其中辐射源可以是任何一种能够发出峰值波长位于480nm以下的辐射光的辐射源。 Wherein the radiation source may be any one capable of emitting radiation source located at a peak wavelength of 480nm or less light. 优选地,辐射源为紫外、紫光或蓝光辐射源,在它们激发下,本发明的荧光体均能够发出高效的绿光。 Preferably, the radiation source is UV, violet or blue radiation source, in their excited phosphor of the present invention are capable of emitting green light and efficient.

[0043] 优选地,上述发光器件中,除具有通式为Si6 ZA1Z0ZNS z · BniCnNk = XEu中组成和结构的氮氧化物绿粉外,还可以加入其他能够被相应辐射源有效激发的荧光体,如在“蓝光LED+ 本发明的荧光体”组合中,加入能够被蓝光有效激发的绿色荧光粉或红色荧光粉可形成白光发光器件。 [0043] Preferably, the light emitting device, in addition to having the general formula Si6 ZA1Z0ZNS z · BniCnNk = XEu nitrogen oxides in the green powder composition and structure, but also may be added to the other can be efficiently excited phosphor respective radiation sources, as a combination of "blue LED + phosphor of the present invention" added can be efficiently excited by blue light or green phosphor red phosphor emitting device may form white light. 上述这些白光发光器件能够用于照明或显示领域,尤其是在广色域液晶显示白光LED器件中。 These white light emitting device can be used for lighting or display, and in particular is a white LED devices in a wide gamut liquid crystal.

[0044] 上述发光器件中可用于与本发明氮氧化物荧光体混合使用的其他发光材料包括, 但不限于:β -sialon:Eu、Zn2Si04:Mn、(La, Ca)3Si6Nn:Ce、(Y,Gd, Lu, Tb)3(Al,Ga)5012:Ce、 (Mg, Ca, Sr, Ba)2Si04:Eu、(Ca, Sr)AlSiN3:Eu、(Ca, Sr)2Si5Ns:Eu、K2(Si,Ge, Ti)F6:Mn、 K3AlF6 = Mn 等。 [0044] The light emitting device may be used mixed with other luminescent materials oxynitride phosphor of the present invention include, but are not limited to: β -sialon: Eu, Zn2Si04: Mn, (La, Ca) 3Si6Nn: Ce, (Y , Gd, Lu, Tb) 3 (Al, Ga) 5012: Ce, (Mg, Ca, Sr, Ba) 2Si04: Eu, (Ca, Sr) AlSiN3: Eu, (Ca, Sr) 2Si5Ns: Eu, K2 ( si, Ge, Ti) F6: Mn, K3AlF6 = Mn and the like.

[0045] 以下结合具体实施例1-21和对比例I进一步说明本发明所提供的氮氧化物绿色荧光体的色坐标、相对强度和半高宽等情况。 [0045] The binding of the following Examples 1-21 and Comparative Examples further illustrate the color coordinates I oxynitride green phosphor of the present invention is provided, and the relative intensity FWHM other specific embodiments. 同时,结合实施例22-25进一步说明本发明所提供的发光器件的有益效果。 Meanwhile, in conjunction with embodiment Examples 22-25 further illustrate the advantageous effects of the present invention, the light emitting device is provided.

[0046] 实施例1-21中氮氧化物绿色荧光体的化学式如表2所示,对比例选择的是: Si5.6Al〇.4Si〇.4N7.6:0· 005Eu(在Si6 ZA1Z0ZNS z:xEu 结构式中z = 0· 4, X = 0· 005) [0046] Example 1-21 Chemical Formula oxynitride green phosphor shown in Table 2, the comparative selection: Si5.6Al〇.4Si〇.4N7.6: 0 · 005Eu (in Si6 ZA1Z0ZNS z: xEu structural formula z = 0 · 4, X = 0 · 005)

[0047] 对比例l:根据Si5.6Alα4Si。 [0047] Comparative Example l: The Si5.6Alα4Si. .4N7.6:0·002Eu(在Si6zAlz0zNSz:xEu结构式中z = 0·4, X = 0. 002)化学计量比,准确称取Si3N4、AlN、Si02、Al203和Eu2O3,混合均匀后装入BN坩埚内,在氮气气氛下,2000°C的高温下焙烧10h,焙烧压力为2MPa,随炉冷却后,经过破碎、经稀盐酸和去离子水洗涤,在100-120°C下烘干,即得到对比例1中的氮氧化物荧光体。 .4N7.6: 0 · 002Eu (in Si6zAlz0zNSz: xEu structure wherein z = 0 · 4, X = 0. 002) stoichiometric ratio, accurately weighed Si3N4, AlN, Si02, Al203 and Eu2O3, mixed uniformly charged BN a crucible, under a nitrogen atmosphere, 10H calcination, calcination at a pressure of 2MPa temperature of 2000 ° C, followed by furnace cooling, crushing, washed with dilute hydrochloric acid and deionized water, dried at 100-120 ° C, i.e. oxynitride phosphor obtained in Comparative Example 1.

[0048] 实施例1 :与对比例的制备方法相比,只是在原料中加入BCl# C粉,获得的实施例1荧光体的XRD见图1所示,SEM见图2所示,激发和发射光谱见图3所示。 [0048] Example 1: Preparation and comparison of the proportion of BCl # C was added only in the raw material powder, XRD see Example 1 phosphor obtained 1, SEM shown in Figure 2, excitation, and emission spectrum as shown in Figure 3.

[0049] 实施例2-21 :实施例2-21中氮氧化物荧光体的制备方法同对比例1,只是在原料中加入B和C的原料,加入的原料分别为:BC1#PC粉。 [0049] Example 2-21: Preparation embodiment the oxynitride phosphors of Examples 2-21 with Comparative Example 1, except for adding raw material in the raw material B, and C was added respectively: BC1 # PC powder.

[0050] 测试方法:采用分光光度计对对比例和实施例1-21中氮氧化物绿色荧光体进行相对亮度、峰值波长和半高宽的测试,其中设定激发波长为460nm,并定义对比例发光材料的相对亮度为100,测试结果见表2所示。 [0050] Test Method: using a spectrophotometer for 1-21 oxynitride green phosphor ratio and the relative luminance embodiments, the peak wavelength and FWHM of the test, which is set to the excitation wavelength of 460 nm, and the definition of the relative brightness ratio of the light emitting material 100, the test results shown in Table 2.

[0051] Cok α线的粉末X射线衍射图谱的测量:用Co靶(λ = I. 78892nm)进行X射线衍射。 [0051] Measurement of powder X-ray diffraction pattern lines Cok α: X-ray diffraction with a Co target (λ = I. 78892nm).

[0052] 表2实施例1-21的各元素比值和发光性能结果 [0052] TABLE 2 Example ratios of the elements and the light emitting performance results 1-21

Figure CN106753346AD00091

Figure CN106753346AD00101

[0053] 从表2列举的实施例1-21结果不难看出,本发明涉及的新型发光材料具有比对比例1(化学式为:Si5.6Ala4Sia4N7.6:0.005Eu)发光材料更高的发光强度和更窄的半峰宽,这些均非常有利于液晶显示器件中发光效率和显色色域的提升。 [0053] It is obvious from the results of Examples 1-21 listed in Table 2, the present invention relates to a novel light emitting material having the ratio of 1 (chemical formula: Si5.6Ala4Sia4N7.6: 0.005Eu) higher than the intensity of luminescent material and a narrower half-value width, which are very conducive to lift liquid crystal display device light emission efficiency and color gamut.

[0054] 以下将结合实施例22-25,进一步说明利用上述本发明制备的无机化合物作为绿光荧光体用于蓝光LED芯片时的有益效果。 [0054] the following with reference to examples 22-25 further illustrate the use of the inorganic compound of the present invention is prepared as a green phosphor for a beneficial effect of a blue LED chip.

[0055] 本发明所提供的上述无机化合物均可以作为绿光荧光体用于蓝光LED芯片,为了节省文字篇幅,以下将以对比例和实施例1为例进行说明。 [0055] The inorganic compound of the present invention can be provided as a green fluorescent material for blue LED chip, the text in order to save space, the following will Comparative Example 1 will be described as an example.

[0056] 实施例22 [0056] Example 22

[0057] —种发光装置,采用蓝光LED芯片、对比例中的氮氧化物绿色无机化合物和红色荧光物质K2SiF6 = Mn,前后两种荧光物质的重量比为:绿:红=80 :20,将荧光物质均匀分散在折射率1. 41,透射率99%的硅胶中,将芯片与光转换膜组合在一起,焊接好电路、封结后得到液晶背光源模组,其光效为981m/W,显示色域为89% NTSC。 [0057] - luminescent device using a blue LED chip, an inorganic compound of a nitrogen oxide green and red in the ratio of fluorescent substance K2SiF6 = Mn, the weight ratio of before and after the two fluorescent substance is: green: red = 80: 20, the fluorescent substances uniformly dispersed in the refractive index 1.41, transmittance of 99% silica, the chips and the light conversion film combined together, the good welding circuit, the junction obtain a liquid crystal sealing backlight module, the luminous efficiency of 981m / W the display color gamut of 89% NTSC.

[0058] 实施例23 [0058] Example 23

[0059] —种发光装置,采用蓝光LED芯片、对比例中的氮氧化物绿色无机化合物和红色荧光物质K2SiF6 = Mn,前后两种荧光物质的重量比为:绿:红=75 :25,将荧光物质均匀分散在折射率1. 41,透射率99%的硅胶中,将芯片与光转换膜组合在一起,焊接好电路、封结后得到液晶背光源模组,其光效为l〇81m/W,显示色域为90% NTSC。 [0059] - luminescent device using a blue LED chip, an inorganic compound of a nitrogen oxide green and red in the ratio of fluorescent substance K2SiF6 = Mn, the weight ratio of before and after the two fluorescent substance is: green: red = 75: 25, the fluorescent substances uniformly dispersed in the refractive index 1.41, transmittance of 99% silica gel, the combination of the chip film with the light conversion, good welding circuit, the junction obtain a liquid crystal sealing backlight module, the light efficiency is l〇81m / W, display color gamut 90% NTSC.

[0060] 实施例24 [0060] Example 24

[0061] 一种发光装置,采用采用蓝光LED芯片、实施例1中的氮氧化物绿色无机化合物和红色荧光物质K2SiF6 = Mn,前后两种荧光物质的重量比为:绿:红=75 :25,将荧光物质均匀分散在折射率1. 41,透射率99%的硅胶中,将芯片与光转换膜组合在一起,焊接好电路、封结后得到液晶背光源模组,其光效为l〇51m/W,显示色域为95% NTSC。 [0061] A light-emitting device using blue LED chips, the nitrogen oxide green inorganic compound in Example 1 and the red fluorescent substance K2SiF6 = Mn embodiment, the weight ratio of before and after the two fluorescent substance is: green: red = 75: 25 , a fluorescent substance are uniformly dispersed in the refractive index of 1.41, a transmittance of 99% silica, the chips and the light conversion film combined together, good welding circuit, after the closure knot obtain a liquid crystal backlight module, the light efficiency is l 〇51m / W, display color gamut 95% NTSC.

[0062] 实施例25 [0062] Example 25

[0063] 一种发光装置,采用采用蓝光LED芯片、实施例1中的氮氧化物绿色无机化合物和红色荧光物质K2SiF6 = Mn,前后两种荧光物质的重量比为:绿:红=60 :40,将荧光物质均匀分散在折射率1. 41,透射率99%的硅胶中,将芯片与光转换膜组合在一起,焊接好电路、封结后得到液晶背光源模组,其光效为l〇〇lm/W,显示色域为100% NTSC。 [0063] A light-emitting device using blue LED chips, the nitrogen oxide green inorganic compound in Example 1 and the red fluorescent substance K2SiF6 = Mn embodiment, the weight ratio of before and after the two fluorescent substance is: green: red = 60: 40 , a fluorescent substance are uniformly dispersed in the refractive index of 1.41, a transmittance of 99% silica, the chips and the light conversion film combined together, good welding circuit, after the closure knot obtain a liquid crystal backlight module, the light efficiency is l 〇〇lm / W, display color gamut 100% NTSC.

[0064] 通过比较可以发现,与现有技术相比,本发明的氮氧化物荧光体具有更高的发光强度和更窄的半峰宽。 [0064] By comparison found that compared with the prior art, the present invention oxynitride phosphor having higher emission intensity and a narrower half width. 当用在广色域液晶显示LED背光源器件中时,不仅发光效率高,而且色域显示色域范围广。 When used in a wide color gamut LED backlight liquid crystal display device, not only a high luminous efficiency, and wide color gamut display gamut.

[0065] 以上仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。 [0065] The above description is only preferred embodiments of the present invention, but not intended to limit the invention to those skilled in the art, the present invention may have various changes and variations. 凡在本发明的精神和原则之内,所作的任何修改、 等同替换、改进等,均应包含在本发明的保护范围之内。 Any modification within the spirit and principle of the present invention, made, equivalent substitutions, improvements, etc., should be included within the scope of the present invention.

Claims (10)

1. 一种荧光体,包含无机化合物,所述无机化合物至少含有元素Si、Al、0、N和Eu,其特征在于,所述无机化合物进一步含有元素B、C中的一种或者两种,并且具有与Si5AlOrMB 同的晶体结构。 1. A phosphor comprising an inorganic compound, the inorganic compound containing at least the elements Si, Al, 0, N, and Eu, wherein said inorganic compound further containing an element B, C is one or two, Si5AlOrMB and having the same crystal structure.
2. 根据权利要求1所述的荧光体,其中,所述无机化合物的组成为: Si6 ZA1Z0ZNS ACnNk:xEu,满足以下条件:0· 1 彡z 彡0· 6,0· 0001 彡X 彡0· 1,0 < k 彡0· 1, 0彡m彡0. 05,0彡η彡0. 05,其中m和η不同时为0 ;并且具有与Si5AlON7相同的晶体结构。 2. The phosphor according to claim 1, wherein the inorganic compound is composed of: Si6 ZA1Z0ZNS ACnNk: xEu, meet the following criteria: 0 · 1 · 0 6,0 San San z · 0 · 0001 San San X 1,0 <k 1 · San 0, 0 0. San 05,0 m San San San 0.05 η, wherein η and m are not simultaneously 0; and has the same crystal structure and Si5AlON7.
3. 根据权利要求2所述的荧光体,其中,ζ和X满足以下条件:0. 15 < ζ < 0. 45,0. 0005 < X 0. 05〇 The phosphor according to claim 2, wherein, X [zeta] and satisfy the following conditions:. 0 15 <ζ <0. 45,0 0005 <X 0. 05〇.
4. 根据权利要求2或3所述的荧光体,其中,0 < η < 0. 02。 The phosphor according to claim 2 or claim 3, wherein, 0 <η <0. 02.
5. 根据权利要求2或3所述的荧光体,其中,0 < m < 0. 02。 The phosphor of claim 2 or claim 3, wherein, 0 <m <0. 02.
6. 根据权利要求2或3所述的荧光体,其中,0 < m彡0. 015,0 < η彡0. 015。 6. The phosphor of claim 2 or claim 3, wherein, 0 <m San 0. 015,0 <η San 0.015.
7. 根据权利要求2所述的荧光体,其中,所述荧光体的色坐标y满足的条件为: 0· 60 彡y 彡0· 68〇 7. The phosphor according to claim 2, wherein the condition y color coordinates of the phosphor is satisfied: 0 · 60 0 · San y San 68〇
8. 根据权利要求2所述的荧光体,其特征在于,该无机化合物的一次粒径30 μ m彡D50彡60 μ m,且长径比大于2 〇 8. The phosphor according to claim 2, characterized in that the primary particle size of the inorganic compound D50 San San 30 μ m 60 μ m, and an aspect ratio of greater than 2 billion
9. 根据权利要求2所述的荧光体,其特征在于,该无机化合物中Fe、Co、Ni的杂质含量总和小于50ppm。 9. The phosphor according to claim 2, characterized in that the inorganic compound of Fe, impurities Co, Ni the sum is less than 50ppm.
10. —种发光器件,其特征在于,所述发光器件包含权利要求1所述的焚光体。 10. - A luminous device, wherein the light-emitting device comprising a light burning claim 1.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011099800A3 (en) * 2010-02-12 2011-12-15 삼성엘이디 주식회사 Fluorescent substance, light emitting device, surface light source device, display device and illuminating device
CN102639672A (en) * 2009-11-10 2012-08-15 电气化学工业株式会社 Beta-sialon, method for producing same and light-emitting device using same
CN102933683A (en) * 2010-09-09 2013-02-13 电气化学工业株式会社 Method for producing Bi type sialon
CN102939273A (en) * 2010-05-13 2013-02-20 电气化学工业株式会社 Method for producing beta-sialon, beta-sialon, and product using same
CN102959044A (en) * 2010-09-16 2013-03-06 电气化学工业株式会社 Beta-type sialon and production method therefor and light-emitting device
CN104479673A (en) * 2014-12-05 2015-04-01 有研稀土新材料股份有限公司 Nitrogen oxide fluorescent powder as well as preparation method thereof and light emitting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102639672A (en) * 2009-11-10 2012-08-15 电气化学工业株式会社 Beta-sialon, method for producing same and light-emitting device using same
WO2011099800A3 (en) * 2010-02-12 2011-12-15 삼성엘이디 주식회사 Fluorescent substance, light emitting device, surface light source device, display device and illuminating device
CN102939273A (en) * 2010-05-13 2013-02-20 电气化学工业株式会社 Method for producing beta-sialon, beta-sialon, and product using same
CN102933683A (en) * 2010-09-09 2013-02-13 电气化学工业株式会社 Method for producing Bi type sialon
CN102959044A (en) * 2010-09-16 2013-03-06 电气化学工业株式会社 Beta-type sialon and production method therefor and light-emitting device
CN104479673A (en) * 2014-12-05 2015-04-01 有研稀土新材料股份有限公司 Nitrogen oxide fluorescent powder as well as preparation method thereof and light emitting device

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