CN106684699A - Two-dimensional material flexible substrate structure, semiconductor light emitting device and manufacturing method thereof - Google Patents

Two-dimensional material flexible substrate structure, semiconductor light emitting device and manufacturing method thereof Download PDF

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Publication number
CN106684699A
CN106684699A CN201611111159.6A CN201611111159A CN106684699A CN 106684699 A CN106684699 A CN 106684699A CN 201611111159 A CN201611111159 A CN 201611111159A CN 106684699 A CN106684699 A CN 106684699A
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CN
China
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layer
flexible substrate
dimensional
substrate
quantum well
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CN201611111159.6A
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Chinese (zh)
Inventor
王庶民
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超晶科技(北京)有限公司
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Priority to CN201611111159.6A priority Critical patent/CN106684699A/en
Publication of CN106684699A publication Critical patent/CN106684699A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding

Abstract

The invention provides a two-dimensional material flexible substrate structure, and a semiconductor light emitting device and a manufacturing method thereof. The two-dimensional material flexible substrate structure comprises a support substrate, a two-dimensional material layer positioned on the surface of the support substrate, and a flexible substrate positioned on the surface of the two-dimensional material layer. According to the two-dimensional material flexible substrate structure provided by the invention, the flexible substrate is combined with the two-dimensional material layer, attraction between upper and lower atoms is greatly weakened by Van der Waals bonding at an interface between the flexible substrate and the two-dimensional material, strength of a Van der Waals force formed at the interface is far less than bond energy of a covalent bond, the flexible substrate can completely self-control strain absorption and release stress, and has extremely high absolute flexibility; the semiconductor light emitting device based on the two-dimensional material flexible substrate structure provided by the invention has the advantages of expanding wavelength, reducing cost, promoting heat dissipation, improving service life of the device and increasing integrated functions of the device.

Description

Two-dimensional material flexible substrate structure, light emitting semiconductor device and preparation method thereof
Technical field
The invention belongs to technical field of semiconductors, is related to a kind of two-dimensional material flexible substrate structure, light emitting semiconductor device And preparation method thereof.
Background technology
Light emitting semiconductor device includes that light emitting diode (Light Emitting Diode, LED) and classes of semiconductors swash Light device (Laser Diode, LD), the advantages of because of its small volume, high low in energy consumption, conversion quantum efficiency, life-span length, is widely used in photograph Many fields in bright, communication, industrial processes, medical science and daily life, its wave-length coverage cover ultraviolet, visible ray, shortwave, in Ripple and LONG WAVE INFRARED, finally to terahertz wave band.Commercial semiconductors luminescent device is limited because being limited by substrate, can only be in silicon, indigo plant Device architecture is designed on the limited kinds substrate such as gem, GaAs, indium phosphide and gallium antimonide and makees epitaxial growth, greatly limited Facility and the optimization of device design that semiconductor heterostructure can be provided with cutting engineering.For example, optical-fibre communications institute Commercialization 1.3 and 1.55 microns of InGaAsP quantum-well lasers can only epitaxial growth on InP substrate, characteristic temperature It is low, it is necessary to stablizing for Output of laser wavelength is realized using external refrigeration, if realizing communication laser instrument in gallium arsenide substrate, Characteristic temperature can be improved, non-brake method laser instrument is realized, is substantially reduced on device power consumption and cost, but current gallium arsenide substrate only Having could realize communication band laser using InAs quantum dots or GaInNAs SQWs, and both gain material stability Not as InGaAs SQWs, the latter is the gain material of commercial near infrared laser, but excitation wavelength is below 1.2 microns. Have been reported that, using In0.22Ga0.781.23 microns of InGaAs quantum-well lasers of As substrate growths have best carrier limit System, highest characteristic temperature reaches 140K, and can also realize lasing at 210 DEG C, and this commercialization substrate is not present so far, to open up Exhibition wavelength to 1.3 microns, needs the InGaAs substrates for using In concentration higher.And for example medium-wave infrared laser instrument is in detection of gas There is extensively important application, and at present InP-base I type quantum-well laser can only realize less than 2.4 microns lasings, GaSb base I types Quantum-well laser can reach 3.7 microns of lasings.In theory more than 3 microns lasings, but device can be realized using InAs SQWs Part structure needs long in InGaAs virtual substrate of the indium content higher than 80%.If equally can realize that InGaSb is virtually served as a contrast Bottom, then InGaSb I type SQWs excitation wavelengths can be more than 4 microns.So the realization of high-quality virtual substrate can be significantly The motility of improving laser device design and device performance, while reducing device cost.
Conventional realizes that virtual substrate method mainly has (1) mutation substrate;(2) flexible substrate.The former adopts continuous alloy Or step alloy is transitioned into the virtual substrate for presetting lattice paprmeter from a kind of business substrate, this mutation substrate can be Realize in large-sized substrate, but dislocation density is still 106cm-2More than, and rough surface, device performance is uneven, yield rate It is low.Flexible substrate concept proposed and was verified in many devices that its cardinal principle was by Y.H.Lo in 1991 earliest First one layer of very thin epitaxial crystalline film is transferred to into one flexible substrate of formation in another support substrate by bonding, The epitaxial layer of lattice mismatch is grown in flexible substrate, because flexible substrate has certain degree of flexibility, the stress that lattice mismatch is produced Discharged jointly by flexible substrate and upper membrane.If flexible substrate thickness is less than the critical thickness for growing lattice mismatch thin film Degree, then dislocation is never produced;If flexible substrate thickness is slightly larger than the critical thickness for growing lattice mismatch thin film, that The dislocation for producing can downward sliding terminate in the interface of flexible substrate and support substrate.Flexible substrate is bonded in support substrate On, its interface remnants covalent bonds can hinder the stress in flexible substrate to receive and release, be unfavorable for realizing full flexible, in addition chi Very little excessive flexible substrate needs very big absolute degree of flexibility (absolute compliance) to realize that stress is released completely Put, can otherwise produce surface ruffle or other lattice defects, and combine can stronger covalent bond be difficult to meet absolute degree of flexibility.By In these reasons, the demonstration although flexible substrate succeeds in multiple material system and device, business is not implemented so far With change.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of two-dimensional material flexible liner bear building-up Structure, light emitting semiconductor device and preparation method thereof, cannot fully absorb and discharge for solving flexible substrate of the prior art The problem of stress.
For achieving the above object and other related purposes, the present invention provides a kind of two-dimensional material flexible substrate structure, described Two-dimensional material flexible substrate structure includes:Support substrate;Two-dimensional material layer, positioned at the support substrate surface;Flexible substrate, position In the two-dimensional material layer surface.
Used as a kind of preferred version of the two-dimensional material flexible substrate structure of the present invention, the support substrate is quasiconductor lining Bottom, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
Used as a kind of preferred version of the two-dimensional material flexible substrate structure of the present invention, the two-dimensional material layer is Graphene Layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
Used as a kind of preferred version of the two-dimensional material flexible substrate structure of the present invention, the thickness of the flexible substrate is less than 50nm。
The present invention also provides a kind of manufacture method of two-dimensional material flexible substrate structure, the two-dimensional material flexible liner bear building-up The manufacture method of structure is comprised the following steps:
1) a kind of support substrate is provided;
2) two-dimensional material layer is formed on the surface of the support substrate;
3) flexible substrate is formed in the two-dimensional material layer surface.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 1) in, The support substrate is Semiconductor substrate, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 2) in, The two-dimensional material layer is graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 3) in, Flexible substrate is formed in the two-dimensional material layer surface to comprise the following steps:
A kind of growth substrates 3-1) are provided;
3-2) form cushion in the growth substrates;
3-3) form sacrifice layer on the cushion;
Flexible substrate material layer 3-4) is formed on the sacrifice layer;
3-5) by step 3-4) structure that obtains is bonded to the surface of the two-dimensional material layer, the flexible substrate material layer Surface be bonding face;
3-6) the flexible substrate material layer and the sacrifice layer are separated, the flexible substrate material layer is transferred to The surface of the two-dimensional material layer, to form the flexible substrate.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 3-4) with Step 3-5) between, also include the step of process is passivated to the surface of the flexible substrate material layer.
As the present invention two-dimensional material flexible substrate structure manufacture method a kind of preferred version, formation it is described soft Property substrate thickness be less than 50nm.
The present invention also provides a kind of light emitting semiconductor device, and the light emitting semiconductor device includes:In any of the above-described scheme Described two-dimensional material flexible substrate structure;Luminescent device material layer, positioned at the surface of the flexible substrate.
Used as a kind of preferred version of the light emitting semiconductor device of the present invention, the luminescent device material layer includes:Lower electricity Pole, positioned at the surface of the flexible substrate;Lower waveguide layer, positioned at the surface of the bottom electrode;Quantum well layer, positioned at the lower ripple The surface of conducting shell;Upper ducting layer, positioned at the surface of the quantum well layer;Top electrode, positioned at the surface of the upper ducting layer.
Used as a kind of preferred version of the light emitting semiconductor device of the present invention, the luminescent device material layer includes:Lower ripple Conducting shell, positioned at the surface of the flexible substrate;Quantum well layer, positioned at the surface of the lower waveguide layer;Bottom electrode, positioned at the amount The surface of the lower waveguide layer of sub- well layer side;Upper ducting layer, positioned at the surface of the quantum well layer;Top electrode, positioned at institute State the surface of ducting layer.
The present invention also provides a kind of manufacture method of light emitting semiconductor device, the manufacture method of the light emitting semiconductor device Comprise the following steps:
1) make described using the manufacture method of two-dimensional material flexible substrate structure as described above described in any one scheme Two-dimensional material flexible substrate structure;
2) luminescent device material layer is formed on the flexible substrate surface.
As a kind of preferred version of the manufacture method of the light emitting semiconductor device of the present invention, in step 2) in, described Flexible substrate surface forms luminescent device material layer and comprises the following steps:
2-1) form bottom electrode on the flexible substrate surface;
2-2) form lower waveguide layer in the lower electrode surface;
2-3) form quantum well layer on the lower waveguide layer surface;
2-4) form ducting layer on the quantum well layer surface;
2-5) ducting layer surface forms Top electrode on described.
As a kind of preferred version of the manufacture method of the light emitting semiconductor device of the present invention, in step 2) in, described Flexible substrate surface forms luminescent device material layer and comprises the following steps:
2-1) form lower waveguide layer on the flexible substrate surface;
2-2) form quantum well layer on the lower waveguide layer surface;
2-3) form ducting layer on the quantum well layer surface;
2-4) ducting layer surface forms Top electrode on described;
2-5) etching removes the part Top electrode, the part upper ducting layer and the part quantum well layer to be formed out Mouthful, the opening exposes the lower waveguide layer;
2-6) the lower waveguide layer surface in the opening forms bottom electrode.
As described above, two-dimensional material flexible substrate structure, light emitting semiconductor device of the present invention and preparation method thereof, have Following beneficial effect:The present invention two-dimensional material flexible substrate structure by flexible substrate in combination with two-dimensional material layer, flexible liner The van der waals bond of bottom and two-dimensional material bed boundary largely reducing the captivation between upper and lower atom, the model that interface is formed The intensity of moral wals force is far smaller than bond energy of covalent bond, and flexible substrate self regulation strain can be received and discharge and answer completely Power, with very big absolute degree of flexibility;The light emitting semiconductor device of the present invention is based on the two-dimensional material flexible substrate structure, tool Have the advantages that to expand wavelength, reduces cost, increase radiating, improve device lifetime and increase device integrated functionality.
Description of the drawings
Fig. 1 is shown as the structural representation of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention one.
Fig. 2 is shown as the flow process of the manufacture method of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention two Figure.
Fig. 3 to Figure 10 is shown as the manufacture method of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention two and exists Structural representation in each step.
Figure 11 to Figure 12 is shown as the structural representation of the light emitting semiconductor device provided in the embodiment of the present invention three.
Figure 13 is shown as the flow process of the manufacture method of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention four Figure.
The manufacture method that Figure 14 to Figure 24 is shown as the two-dimensional material flexible substrate structure provided in the embodiment of the present invention four Structural representation in each step.
Component label instructions
10 support substrates
11 two-dimensional material layers
12 flexible substrates
13 flexible substrate material layers
14 growth substrates
15 cushions
16 sacrifice layers
17 luminescent device material layers
171 bottom electrodes
172 lower waveguide layers
173 quantum well layers
1731 first quantum well layers
1732 second quantum well layers
1733 the 3rd quantum well layers
Ducting layer on 174
175 Top electrodes
18 openings
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification Disclosed content understands easily other advantages and effect of the present invention.The present invention can also pass through concrete realities different in addition The mode of applying is carried out or applies, the every details in this specification can also based on different viewpoints with application, without departing from Various modifications and changes are carried out under the spirit of the present invention.
Refer to Fig. 1 to Figure 24.It should be noted that the diagram provided in the present embodiment only illustrates in a schematic way this The basic conception of invention, though only show in diagram with relevant component in the present invention rather than according to package count during actual enforcement Mesh, shape and size are drawn, and the kenel of each component, quantity and ratio can be a kind of random change during its actual enforcement, and its Assembly layout kenel is likely to increasingly complex.
Embodiment one
Fig. 1 is referred to, the present invention provides a kind of two-dimensional material flexible substrate structure, the two-dimensional material flexible substrate structure Including:Support substrate 10;Two-dimensional material layer 11, the two-dimensional material layer 11 is located at the surface of the support substrate 10;Flexible liner Bottom 12, the flexible substrate 12 is located at the surface of the two-dimensional material layer 11.
As an example, the support substrate 10 can be Semiconductor substrate, semi-insulator substrate, insulator substrates or heat conduction Material substrate.Preferably, in the present embodiment, the support substrate 10 is Si substrates.
As an example, the two-dimensional material layer 11 can be graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2 Layer.Preferably, in the present embodiment, the two-dimensional material layer 11 is graphene layer.
As an example, the lattice paprmeter of the flexible substrate 12 and the light emitting semiconductor device material that be formed at its surface The lattice paprmeter of layer matches or is adapted to;In this example, the flexible substrate 12 can be but to be not limited only to N-shaped InGaAs flexible Substrate, more specifically, the flexible substrate 12 can be N-shaped In0.27Ga0.73As flexible substrates or N-shaped In0.73Ga0.27As is soft Property substrate.
As an example, the thickness of the flexible substrate 12 can be selected according to actual needs, it is preferable that the present embodiment In, the thickness of the flexible substrate 12 is less than 50nm.
The two-dimensional material flexible substrate structure by the flexible substrate 12 in combination with the two-dimensional material layer 11, it is described The van der waals bond at flexible substrate 12 and the interface of two-dimensional material layer 11 largely reducing the captivation between upper and lower atom, The intensity of the Van der Waals for that interface is formed is far smaller than bond energy of covalent bond, and the flexible substrate 12 self can be adjusted completely Stress is received and discharges in section strain, with very big absolute degree of flexibility.
Embodiment two
Fig. 2 is referred to, the present invention also provides a kind of manufacture method of two-dimensional material flexible substrate structure, the two-dimensional material The manufacture method of flexible substrate structure is comprised the following steps:
1) a kind of support substrate is provided;
2) two-dimensional material layer is formed on the surface of the support substrate;
3) flexible substrate is formed in the two-dimensional material layer surface.
Execution step 1), refer to S1 steps and the Fig. 3 in Fig. 2, there is provided a kind of support substrate 10.
As an example, the support substrate 10 can be Semiconductor substrate, semi-insulator substrate, insulator substrates or heat conduction Material substrate.Preferably, in the present embodiment, the support substrate 10 is Si substrates.
Execution step 2), S2 steps and the Fig. 4 in Fig. 2 is referred to, form two-dimentional material on the surface of the support substrate 10 The bed of material 11.
As an example, the two-dimensional material layer 11 can be graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2 Layer.Preferably, in the present embodiment, the two-dimensional material layer 11 is graphene layer.
Execution step 3), S3 steps and the Fig. 5 to Figure 10 in Fig. 2 is referred to, formed on the surface of two-dimensional material layer 11 Flexible substrate 12.
As an example, form flexible substrate 12 on the surface of two-dimensional material layer 11 to comprise the following steps:
A kind of growth substrates 14 3-1) are provided, as shown in Figure 5;
3-2) in the Epitaxial growth cushion 15 of the growth substrates 14, as shown in Figure 6;
3-3) in the Epitaxial growth sacrifice layer 16 of the cushion 15, as shown in Figure 7;The material of the sacrifice layer 16 is can With the material being easily removed by selective corrosion or oxidation;
The flexible substrate material layer 13 3-4) is formed on the sacrifice layer 16, as shown in Figure 8;
3-5) by step 3-4) structure that obtains is bonded to the surface of the two-dimensional material layer 11, the flexible substrate material The surface of layer 13 is bonding face, as shown in Figure 9;
3-6) the flexible substrate material layer 13 and the sacrifice layer 16 are separated by wet corrosion technique, will be described Flexible substrate material layer 13 is transferred to the surface of the two-dimensional material layer 11, to form the flexible substrate 12, as shown in Figure 10.
As an example, in step 3-4) and step 3-5) between, also include the surface to the flexible substrate material layer 13 The step of being passivated process.
As an example, the lattice paprmeter of the flexible substrate 12 and the light emitting semiconductor device material that be formed at its surface The lattice paprmeter of layer matches or is adapted to.
As an example, the thickness of the flexible substrate 12 can be selected according to actual needs, it is preferable that the present embodiment In, the thickness of the flexible substrate 12 is less than 50nm.
In this example, the growth substrates 14 can be N-shaped GaAs substrates;The cushion 15 can be buffered for GaAs Layer, the thickness of the cushion 15 can be 200nm;The sacrifice layer 16 can be AlAs sacrifice layers, the sacrifice layer 16 Thickness can be 100nm;The flexible substrate material layer 13 can be N-shaped In0.27Ga0.73As。
In another example, the growth substrates 14 can be N-shaped InP substrate;The cushion 15 can be In0.53Ga0.47As cushions, the thickness of the cushion 15 can be 200nm;The sacrifice layer 16 can be InP sacrificial layer, The thickness of the sacrifice layer 16 can be 100nm;The flexible substrate material layer 13 can be N-shaped In0.73Ga0.27As。
Embodiment three
Figure 11 and Figure 12 is referred to, the present invention also provides a kind of light emitting semiconductor device, the light emitting semiconductor device bag Include:Two-dimensional material flexible substrate structure and luminescent device material layer 17 described in embodiment one, the luminescent device material layer 17 surfaces for being located at the flexible substrate.The concrete structure of the two-dimensional material flexible substrate structure refers to embodiment one, this It is secondary to be not repeated.
Figure 11 is referred to, in one example, the luminescent device material layer includes:Bottom electrode 171, the bottom electrode 171 Positioned at the surface of the flexible substrate 12;Lower waveguide layer 172, the lower waveguide layer 172 is located at the surface of the bottom electrode 171; Quantum well layer 173, the quantum well layer 173 is located at the surface of the lower waveguide layer 172, and the quantum well layer 173 includes first Quantum well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 is located at described The surface of lower waveguide layer 172, second quantum well layer 1732 be located at first quantum well layer 1731 surface, the described 3rd Quantum well layer 1733 is located at the surface of second quantum well layer 1732;Upper ducting layer 174, the upper ducting layer 174 is located at institute State the surface of the 3rd quantum well layer 1733;Top electrode 175, the Top electrode 175 is located at the surface of the upper ducting layer 174.
Figure 12 is referred to, in another example, the luminescent device material layer includes:Lower waveguide layer 172, the lower waveguide Layer 172 is located at the surface of the flexible substrate 12;Quantum well layer 173, the quantum well layer 173 is located at the lower waveguide layer 172 Surface, the quantum well layer 173 include the first quantum well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 is located at the surface of the lower waveguide layer 172, and second quantum well layer 1732 is located at institute The surface of the first quantum well layer 1731 is stated, the 3rd quantum well layer 1733 is located at the surface of second quantum well layer 1732; Bottom electrode 171, the bottom electrode 171 is located at the surface of the lower waveguide layer 172 of the side of the quantum well layer 173;Upper waveguide Layer 174, the upper ducting layer 174 is located at the surface of the 3rd quantum well layer 1733;Top electrode 175, the Top electrode 175 In the surface of the upper ducting layer 174.
As an example, the flexible substrate 12 can be N-shaped In0.27Ga0.73As flexible substrates, the flexible substrate 12 Thickness can be 5nm;The bottom electrode 171 can be N-shaped In0.27Ga0.73As bottom electrodes, the thickness of the bottom electrode 171 can be with For 500nm;The lower waveguide layer 172 can be InGaP lower waveguide layers, and the thickness of the lower waveguide layer 172 can be 1500nm; First quantum well layer 1731 can be InAlGaAs layers, and the thickness of first quantum well layer 1731 can be 50nm;Institute It is alternate laminated structure to state the second quantum well layer 1732, including the In being alternately superimposed on0.47Ga0.53As layers and InAlGaAs layers, it is described In0.47Ga0.53The thickness of As layers can be 7nm, and the thickness of the InAlGaAs layers can be 10nm;3rd quantum well layer 1733 can be InAlGaAs layers, and the thickness of the 3rd quantum well layer 1733 can be 50nm;The upper ducting layer 174 can be with For ducting layer on InGaP, the thickness of the upper ducting layer 174 can be 1500nm;The Top electrode 175 can be p-type In0.27Ga0.73As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
As an example, the flexible substrate 12 can be N-shaped In0.73Ga0.27As flexible substrates, the flexible substrate 12 Thickness can be 5nm;The bottom electrode 171 can be N-shaped In0.8Ga0.2As bottom electrodes, the thickness of the bottom electrode 171 can be with For 500nm;The lower waveguide layer 172 can be In0.8Al0.2As lower waveguide layers, the thickness of the lower waveguide layer 172 can be 2000nm;First quantum well layer 1731 can be In0.8Ga0.2As layers, the thickness of first quantum well layer 1731 can be with For 50nm;Second quantum well layer 1732 is alternate laminated structure, including the InAs layers and In that are alternately superimposed on0.8Ga0.2As layers, The thickness of the InAs layers can be 10nm, the In0.8Ga0.2The thickness of As layers can be 15nm;3rd quantum well layer 1733 can be In0.8Ga0.2As layers, the thickness of the 3rd quantum well layer 1733 can be 50nm;The upper ducting layer 174 can Think In0.8Al0.2The upper ducting layers of As, the thickness of the upper ducting layer 174 can be 2000nm;The Top electrode 175 can be p Type In0.8Ga0.2As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
Example IV
Figure 13 is referred to, the present invention also provides a kind of manufacture method of light emitting semiconductor device, the photogenerator The manufacture method of part is comprised the following steps:
1) two-dimensional material is made using the manufacture method of the two-dimensional material flexible substrate structure described in embodiment two Flexible substrate structure;
2) luminescent device material layer is formed on the flexible substrate surface.
Execution step 1), the S1 steps in Figure 13 are referred to, using the two-dimensional material flexible substrate described in embodiment two The manufacture method of structure makes the two-dimensional material flexible substrate structure.
As an example, the concrete grammar for making the two-dimensional material flexible substrate structure refers to embodiment two, this time not Tire out again and state.
Execution step 2), S2 steps and the Figure 14 to Figure 24 in Figure 13 is referred to, in the surface shape of the flexible substrate 14 Into luminescent device material layer 17.
In one example, form luminescent device material layer 17 on the surface of the flexible substrate 12 to comprise the following steps:
2-1) bottom electrode 171 is formed on the surface of the flexible substrate 12, as shown in figure 14;
2-2) lower waveguide layer 172 is formed on the surface of the bottom electrode 171, as shown in figure 15;
2-3) quantum well layer 173 is formed on the surface of the lower waveguide layer 172, the quantum well layer 173 includes the first amount Sub- well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 be located at it is described under The surface of ducting layer 172, second quantum well layer 1732 is located at the surface of first quantum well layer 1731, the 3rd amount Sub- well layer 1733 is located at the surface of second quantum well layer 1732, i.e., on the surface of the lower waveguide layer 172 form described successively First quantum well layer 1731, second quantum well layer 1732 and the 3rd quantum well layer 1733, as shown in figure 16;
2-4) ducting layer 174 is formed on the surface of the 3rd quantum well layer 1733, as shown in figure 17;
2-5) surface of ducting layer 174 forms Top electrode 175 on described, as shown in figure 18.
In another example, form luminescent device material layer 17 on the surface of the flexible substrate 12 to comprise the following steps:
2-1) lower waveguide layer 172 is formed on the surface of the flexible substrate 12, as shown in figure 19;
2-2) quantum well layer 173 is formed on the surface of the lower waveguide layer 172, the quantum well layer 173 includes the first amount Sub- well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 be located at it is described under The surface of ducting layer 172, second quantum well layer 1732 is located at the surface of first quantum well layer 1731, the 3rd amount Sub- well layer 1733 is located at the surface of second quantum well layer 1732, i.e., on the surface of the lower waveguide layer 172 form described successively First quantum well layer 1731, second quantum well layer 1732 and the 3rd quantum well layer 1733, as shown in figure 20;
2-3) ducting layer 174 is formed on the surface of the quantum well layer 173, as shown in figure 21;
2-4) surface of ducting layer 174 forms Top electrode 175 on described, as shown in figure 22;
2-5) etching removes the part Top electrode 175, the part upper ducting layer 174 and the part quantum well layer 173 to form opening 18, and the opening 18 exposes the lower waveguide layer 172, as shown in figure 23;
2-6) surface of the lower waveguide layer 172 in the opening 18 forms bottom electrode 171, as shown in figure 24.
As an example, the flexible substrate 12 can be N-shaped In0.27Ga0.73As flexible substrates, the flexible substrate 12 Thickness can be 5nm;The bottom electrode 171 can be N-shaped In0.27Ga0.73As bottom electrodes, the thickness of the bottom electrode 171 can be with For 500nm;The lower waveguide layer 172 can be InGaP lower waveguide layers, and the thickness of the lower waveguide layer 172 can be 1500nm; First quantum well layer 1731 can be InAlGaAs layers, and the thickness of first quantum well layer 1731 can be 50nm;Institute It is alternate laminated structure to state the second quantum well layer 1732, including the In being alternately superimposed on0.47Ga0.53As layers and InAlGaAs layers, it is described In0.47Ga0.53The thickness of As layers can be 7nm, and the thickness of the InAlGaAs layers can be 10nm;3rd quantum well layer 1733 can be InAlGaAs layers, and the thickness of the 3rd quantum well layer 1733 can be 50nm;The upper ducting layer 174 can be with For ducting layer on InGaP, the thickness of the upper ducting layer 174 can be 1500nm;The Top electrode 175 can be p-type In0.27Ga0.73As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
As an example, the flexible substrate 12 can be N-shaped In0.73Ga0.27As flexible substrates, the flexible substrate 12 Thickness can be 5nm;The bottom electrode 171 can be N-shaped In0.8Ga0.2As bottom electrodes, the thickness of the bottom electrode 171 can be with For 500nm;The lower waveguide layer 172 can be In0.8Al0.2As lower waveguide layers, the thickness of the lower waveguide layer 172 can be 2000nm;First quantum well layer 1731 can be In0.8Ga0.2As layers, the thickness of first quantum well layer 1731 can be with For 50nm;Second quantum well layer 1732 is alternate laminated structure, including the InAs layers and In that are alternately superimposed on0.8Ga0.2As layers, The thickness of the InAs layers can be 10nm, the In0.8Ga0.2The thickness of As layers can be 15nm;3rd quantum well layer 1733 can be In0.8Ga0.2As layers, the thickness of the 3rd quantum well layer 1733 can be 50nm;The upper ducting layer 174 can Think In0.8Al0.2The upper ducting layers of As, the thickness of the upper ducting layer 174 can be 2000nm;The Top electrode 175 can be p Type In0.8Ga0.2As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
In sum, the present invention provides a kind of two-dimensional material flexible substrate structure, light emitting semiconductor device and its making side Method, the two-dimensional material flexible substrate structure includes:Support substrate;Two-dimensional material layer, positioned at the support substrate surface;It is flexible Substrate, positioned at the two-dimensional material layer surface.The two-dimensional material flexible substrate structure of the present invention is by flexible substrate and two-dimensional material Layer combines, and the van der waals bond of flexible substrate and two-dimensional material bed boundary largely reducing the attraction between upper and lower atom Power, the intensity of the Van der Waals for that interface is formed is far smaller than bond energy of covalent bond, and flexible substrate can self regulation completely Stress is received and discharges in strain, with very big absolute degree of flexibility;The light emitting semiconductor device of the present invention is based on the two-dimentional material Material flexible substrate structure, with expansion wavelength, reduces cost, increases radiating, improves device lifetime and increases device integrated functionality The advantages of.
The principle and its effect of above-described embodiment only illustrative present invention, it is of the invention not for limiting.It is any ripe Know the personage of this technology all can carry out modifications and changes under the spirit and the scope without prejudice to the present invention to above-described embodiment.Cause This, such as those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit Into all equivalent modifications or change, should by the present invention claim be covered.

Claims (16)

1. a kind of two-dimensional material flexible substrate structure, it is characterised in that include:
Support substrate;
Two-dimensional material layer, positioned at the support substrate surface;
Flexible substrate, positioned at the two-dimensional material layer surface.
2. two-dimensional material flexible substrate structure according to claim 1, it is characterised in that:The support substrate is quasiconductor Substrate, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
3. two-dimensional material flexible substrate structure according to claim 1, it is characterised in that:The two-dimensional material layer is graphite Alkene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
4. two-dimensional material flexible substrate structure according to claim 1, it is characterised in that:The thickness of the flexible substrate is little In 50nm.
5. a kind of manufacture method of two-dimensional material flexible substrate structure, it is characterised in that:Comprise the following steps:
1) a kind of support substrate is provided;
2) two-dimensional material layer is formed on the surface of the support substrate;
3) flexible substrate is formed in the two-dimensional material layer surface.
6. the manufacture method of two-dimensional material flexible substrate structure according to claim 5, it is characterised in that:In step 1) In, the support substrate is Semiconductor substrate, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
7. the manufacture method of two-dimensional material flexible substrate structure according to claim 5, it is characterised in that:In step 2) In, the two-dimensional material layer is graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
8. the manufacture method of two-dimensional material flexible substrate structure according to claim 5, it is characterised in that:In step 3) In, form flexible substrate in the two-dimensional material layer surface and comprise the following steps:
A kind of growth substrates 3-1) are provided;
3-2) form cushion in the growth substrates;
3-3) form sacrifice layer on the cushion;
Flexible substrate material layer 3-4) is formed on the sacrifice layer;
3-5) by step 3-4) structure that obtains is bonded to the surface of the two-dimensional material layer, the table of the flexible substrate material layer Face is bonding face;
3-6) the flexible substrate material layer and the sacrifice layer are separated, the flexible substrate material layer are transferred to described The surface of two-dimensional material layer, to form the flexible substrate.
9. the manufacture method of two-dimensional material flexible substrate structure according to claim 8, it is characterised in that:In step 3-4) With step 3-5) between, also include the step of process is passivated to the surface of the flexible substrate material layer.
10. the manufacture method of the two-dimensional material flexible substrate structure according to claim 5 or 8, it is characterised in that:Formed The thickness of the flexible substrate is less than 50nm.
11. a kind of light emitting semiconductor devices, it is characterised in that include:
Two-dimensional material flexible substrate structure as any one of Claims 1-4;
Luminescent device material layer, positioned at the surface of the flexible substrate.
12. light emitting semiconductor devices according to claim 11, it is characterised in that:The luminescent device material layer includes:
Bottom electrode, positioned at the surface of the flexible substrate;
Lower waveguide layer, positioned at the surface of the bottom electrode;
Quantum well layer, positioned at the surface of the lower waveguide layer;
Upper ducting layer, positioned at the surface of the quantum well layer;
Top electrode, positioned at the surface of the upper ducting layer.
13. light emitting semiconductor devices according to claim 11, it is characterised in that:The luminescent device material layer includes:
Lower waveguide layer, positioned at the surface of the flexible substrate;
Quantum well layer, positioned at the surface of the lower waveguide layer;
Bottom electrode, positioned at the surface of the lower waveguide layer of the quantum well layer side;
Upper ducting layer, positioned at the surface of the quantum well layer;
Top electrode, positioned at the surface of the upper ducting layer.
A kind of 14. manufacture methods of light emitting semiconductor device, it is characterised in that:Comprise the following steps:
1) as described in the manufacture method of two-dimensional material flexible substrate structure of the employing any one of claim 5 to 10 makes Two-dimensional material flexible substrate structure;
2) luminescent device material layer is formed on the flexible substrate surface.
The manufacture method of 15. light emitting semiconductor devices according to claim 14, it is characterised in that:In step 2) in, The flexible substrate surface forms luminescent device material layer and comprises the following steps:
2-1) form bottom electrode on the flexible substrate surface;
2-2) form lower waveguide layer in the lower electrode surface;
2-3) form quantum well layer on the lower waveguide layer surface;
2-4) form ducting layer on the quantum well layer surface;
2-5) ducting layer surface forms Top electrode on described.
The manufacture method of 16. light emitting semiconductor devices according to claim 14, it is characterised in that:In step 2) in, The flexible substrate surface forms luminescent device material layer and comprises the following steps:
2-1) form lower waveguide layer on the flexible substrate surface;
2-2) form quantum well layer on the lower waveguide layer surface;
2-3) form ducting layer on the quantum well layer surface;
2-4) ducting layer surface forms Top electrode on described;
2-5) etching removes the part Top electrode, the part upper ducting layer and the part quantum well layer to form opening, The opening exposes the lower waveguide layer;
2-6) the lower waveguide layer surface in the opening forms bottom electrode.
CN201611111159.6A 2016-12-06 2016-12-06 Two-dimensional material flexible substrate structure, semiconductor light emitting device and manufacturing method thereof CN106684699A (en)

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CN108767659A (en) * 2018-06-04 2018-11-06 清华大学 A method of utilizing two-dimensional material interlayer epitaxial growth laser
CN109378709A (en) * 2018-12-13 2019-02-22 中国科学院半导体研究所 Flexible VCSEL array device and preparation method thereof
CN109860264A (en) * 2019-03-01 2019-06-07 武汉华星光电半导体显示技术有限公司 Organic LED display panel and its manufacturing method
CN110323668A (en) * 2019-07-05 2019-10-11 清华大学 A kind of infrared narrowband emitter

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