CN106677438A - Novel high-gain component type photovoltaic tile - Google Patents
Novel high-gain component type photovoltaic tile Download PDFInfo
- Publication number
- CN106677438A CN106677438A CN201710065511.5A CN201710065511A CN106677438A CN 106677438 A CN106677438 A CN 106677438A CN 201710065511 A CN201710065511 A CN 201710065511A CN 106677438 A CN106677438 A CN 106677438A
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- Prior art keywords
- cell body
- photovoltaic tile
- chimb
- cell
- stricture
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- 210000005056 cell body Anatomy 0.000 claims description 70
- 208000031481 Pathologic Constriction Diseases 0.000 claims description 30
- 210000001215 vagina Anatomy 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 24
- 210000004027 cell Anatomy 0.000 claims description 22
- 230000011514 reflex Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 12
- 239000000499 gel Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
- E04D1/00—Roof covering by making use of tiles, slates, shingles, or other small roofing elements
- E04D1/12—Roofing elements shaped as plain tiles or shingles, i.e. with flat outer surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
- H02S20/25—Roof tile elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a novel high-gain component type photovoltaic tile which comprises a photovoltaic tile body (5). A right frame (1), a top frame (2), a left frame (3) and a bottom frame (4) are sequentially arranged on the periphery of the photovoltaic tile body (5). The photovoltaic tile body (5) sequentially comprises a panel (6), a battery plate (7) and a high-gain directional reflection backboard (8), wherein the battery plate (7) is formed by splicing a plurality of battery pieces, the high-gain directional reflection backboard (8) is provided with reflection lines (9), and the reflection lines (9) are located at gaps between the battery pieces. According to the novel high-gain component type photovoltaic tile, the reflection lines are designed on the high-gain directional reflection backboard and fill the gaps between the battery pieces, therefore light can be reflected to the surface of glass in an orientated mode and then reflected to the surfaces of the battery pieces for the second time, and power of a photovoltaic tile assembly is improved.
Description
Technical field
The present invention relates to field of solar energy, more particularly, to a kind of new high-gain element type photovoltaic tile.
Background technology
Photovoltaic watt is the cell panel structure glued with panel and backboard, and cell panel is carried on the back between panel and backboard
Plate is simple planar structure, and the power of photovoltaic tile component is relatively low.
The content of the invention
The present invention is relatively low for the power for solving the problems, such as current photovoltaic tile component, and for this kind of new high-gain is provided
Element type photovoltaic tile, including photovoltaic tile main body 5, in the surrounding of photovoltaic tile main body 5 left frame 1, top frame 2, a left side are sequentially provided with
Frame 3, bottom frame 4, the photovoltaic tile main body 5 includes successively panel 6, cell panel 7 and high-gain orienting reflex backboard 8, institute
State cell panel 7 to be spliced by some cell pieces, the high-gain orienting reflex backboard 8 is provided with reflection stricture of vagina 9, reflects stricture of vagina 9
In the gap of cell piece.
A kind of new high-gain element type photovoltaic tile of the present invention, the reflection stricture of vagina 9 by it is some it is continuous laterally and/or longitudinally
Striated groove composition, formed waveform, reflect stricture of vagina 9 width L between 0.1-10mm, the height H of crest is at 10-30 μm
Between.
A kind of new high-gain element type photovoltaic tile of the present invention, the crest and trough of waveform reflection stricture of vagina 9 are pointed shape,
Between 120-135 °, between 5-20 μm, the distance between adjacent two trough K's height h of trough exists angle a of trough
Between 0.01-0.5mm.
A kind of new high-gain element type photovoltaic tile of the present invention, the trough of waveform reflection stricture of vagina 9 is circular arc, trough depth
Q is between 0.01-0.5 μm.
A kind of new high-gain element type photovoltaic tile of the present invention, the width L ' of the reflection stricture of vagina 9 is high between 0.1-10mm
Between 10-30 μm, reflection stricture of vagina is the hole of falling rectangular pyramid being arranged in order to degree H ', depth h in hole ' between 5-20 μm.
A kind of new high-gain element type photovoltaic tile of the present invention, the panel 6, the cell panel 7 and high-gain orienting reflex back of the body
Plate 8 is glued by the encapsulation of high index of refraction encapsulating material between any two.
A kind of new high-gain element type photovoltaic tile of the present invention, the bottom frame 4 and top frame 2 of adjacent two pieces of photovoltaic tiles
It is mutually clamped, left frame 3 and left frame 1 are mutually clamped.
A kind of new high-gain element type photovoltaic tile of the present invention, the left frame 1 includes the first cell body 1.1, the first blend stop
1.2nd, the first chimb 1.3, the second blend stop 1.4, the first tube seat 1.6, fourth gear bar 1.7, the first cell body 1.1 is opening up, notch
Centre is provided with the first blend stop 1.2 and fourth gear bar 1.7, and the left end of the first cell body 1.1 is provided with first chimb 1.3, and described first
The shape of cross section of chimb 1.3 elongate configuration triangular in shape, second blend stop 1.4 is connected to the first cell body 1.1, the second blend stop
1.4 top is horizontally arranged with third baffle 1.5, and in the lower section of third baffle 1.5 the first tube seat 1.6 is provided with, and the tube seat is horizontal
The rectangular strip pipe fitting of cross sectional shape, photovoltaic tile body glue is on the first tube seat 1.6；
The top frame 2 includes the second cell body 2.1, the 3rd cell body 2.2, the 4th cell body 2.3, the 5th cell body 2.4, described
3rd cell body 2.2 is open towards the right side, and the 3rd cell body 2.1 is arranged on above the 3rd cell body 2.2, opening up, the 4th groove
Body 2.3 is arranged on the left side of the 3rd cell body 2.2, is open towards a left side, the installation sealing strip 6 in the notch of the 4th cell body 2.3, and the described 5th
Cell body 2.4 is arranged on the lower section of the 3rd cell body 2.2, and, to the direction of the 3rd cell body 2.2, photovoltaic tile main gel is in the 5th groove for open slot
On body 2.4；
The left frame 3 includes the 6th cell body 3.1, the 4th chimb 3.2, the second tube seat 3.3, the 3rd chimb 3.5, described the
Six cell bodies 3.1 are opening down, and the upper right corner is provided with the 4th chimb 3.2 in notch, and the cross section of the 4th chimb 3.2 is in rectangular
The elongate configuration of shape, the upper right corner of the 6th cell body 3.1 is provided with the 3rd chimb 3.5, and the cross section of the 3rd chimb 3.5 is in triangle
The elongate configuration of shape, the left side of the 6th cell body 3.1 is provided with the second tube seat 3.3, and photovoltaic tile main gel is on the second tube seat 3.3；
The bottom frame 4 includes the 7th cell body 4.1, the 3rd tube seat 4.2, the 7th blend stop 4.3, the 7th cell body 4.1
It is opening down, multiple openings are provided with the plate in left side, the left plate of the 7th cell body 4.1 is provided below the 3rd tube seat 4.2, described
7th blend stop 4.3 is arranged on below the 3rd tube seat 4.2, deadlocked photovoltaic tile body above the 7th blend stop 4.3.
The invention has the beneficial effects as follows：
The present invention devises reflection stricture of vagina on high-gain orienting reflex backboard, and these reflection stricture of vaginas are filled in the space of cell piece
In, secondary reflection after light orienting reflex to glass surface can be returned to cell piece surface, improve the work(of photovoltaic tile component
Rate.
Description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the schematic diagram of the present invention；
Fig. 2 is the schematic diagram after two pieces of photovoltaic tiles are installed；
Fig. 3 is the schematic diagram of photovoltaic tile main body side apparent time；
Fig. 4 is the schematic diagram of left frame；
Fig. 5 is the schematic diagram of top frame；
Fig. 6 is the schematic diagram of left frame；
Fig. 7 is the schematic diagram of bottom frame；
Fig. 8 is left frame and the schematic diagram after left frame engaging；
Fig. 9 is top frame and the schematic diagram after bottom frame engaging；
Figure 10 is schematic diagram when stricture of vagina pointed shape trough is reflected in embodiment 1；
Figure 11 is schematic diagram when stricture of vagina circular arc trough is reflected in embodiment 1；
Figure 12 is the schematic diagram of embodiment 2.
Specific embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine by any way.
Any feature disclosed in this specification, unless specifically stated otherwise, can be equivalent or with similar purpose by other
Alternative features are replaced.I.e., unless specifically stated otherwise, each feature is an example in a series of equivalent or similar characteristics
.
A kind of new high-gain element type photovoltaic tile as Figure 1-3, including photovoltaic tile main body 5, in photovoltaic tile main body 5
Surrounding be sequentially provided with left frame 1, top frame 2, left frame 3, bottom frame 4, the photovoltaic tile main body 5 includes successively panel
6th, cell panel 7 and high-gain orienting reflex backboard 8, the cell panel 7 is spliced by some cell pieces, the high-gain orientation
Reflective back plane 8 is provided with reflection stricture of vagina 9, reflects the gap that stricture of vagina 9 is located at cell piece.As shown in figures 4-9, when photovoltaic tile is installed, phase
The bottom frame 4 and top frame 2 of adjacent two pieces of photovoltaic tiles is mutually clamped, and left frame 3 and left frame 1 are mutually clamped.Wherein, it is described
Left frame 1 includes the first cell body 1.1, the first blend stop 1.2, the first chimb 1.3, the second blend stop 1.4, the first tube seat 1.6, fourth gear
Bar 1.7, the first cell body 1.1 is opening up, and the first blend stop 1.2 and fourth gear bar 1.7 are provided with the middle of notch, and the first cell body 1.1 is left
End is provided with first chimb 1.3, the shape of cross section of the first chimb 1.3 elongate configuration triangular in shape, the second gear
Bar 1.4 is connected to the first cell body 1.1, and the top of the second blend stop 1.4 is horizontally arranged with third baffle 1.5, in third baffle 1.5
Lower section is provided with the first tube seat 1.6, the rectangular strip pipe fitting of the tube seat shape of cross section, and photovoltaic tile body glue is in first pipe
On groove 1.6.The top frame 2 includes the second cell body 2.1, the 3rd cell body 2.2, the 4th cell body 2.3, the 5th cell body 2.4, described
3rd cell body 2.2 is open towards the right side, and the 3rd cell body 2.1 is arranged on above the 3rd cell body 2.2, opening up, the 4th groove
Body 2.3 is arranged on the left side of the 3rd cell body 2.2, is open towards a left side, the installation sealing strip 6 in the notch of the 4th cell body 2.3, and the described 5th
Cell body 2.4 is arranged on the lower section of the 3rd cell body 2.2, and, to the direction of the 3rd cell body 2.2, photovoltaic tile main gel is in the 5th groove for open slot
On body 2.4.The left frame 3 includes the 6th cell body 3.1, the 4th chimb 3.2, the second tube seat 3.3, the 3rd chimb 3.5, described the
Six cell bodies 3.1 are opening down, and the upper right corner is provided with the 4th chimb 3.2 in notch, and the cross section of the 4th chimb 3.2 is in rectangular
The elongate configuration of shape, the upper right corner of the 6th cell body 3.1 is provided with the 3rd chimb 3.5, and the cross section of the 3rd chimb 3.5 is in triangle
The elongate configuration of shape, the left side of the 6th cell body 3.1 is provided with the second tube seat 3.3, and photovoltaic tile main gel is on the second tube seat 3.3.Institute
Bottom frame 4 is stated including the 7th cell body 4.1, the 3rd tube seat 4.2, the 7th blend stop 4.3, the 7th cell body 4.1 is opening down, it is left
Multiple openings are provided with the plate of side, the left plate of the 7th cell body 4.1 is provided below the 3rd tube seat 4.2, the 7th blend stop 4.3
It is arranged on below the 3rd tube seat 4.2, deadlocked photovoltaic tile body above the 7th blend stop 4.3.
The panel 6, cell panel 7 and high-gain orienting reflex backboard 8 are sealed between any two by high index of refraction encapsulating material
Dress is glued.Panel, high index of refraction encapsulating material, cell panel, high index of refraction encapsulating material, high-gain orienting reflex backboard are by warm
Cured encapsulation, between 75-100 DEG C, lamination times are 5-8min to laminating temperature.After the high index of refraction encapsulating material solidification
Tensile strength in more than 18Mpa, elongation at break more than 350%, with the peel strength of glass in more than 60N/cm, with the back of the body
The peel strength of plate is in more than 4060N/cm.The refractive index of the high index of refraction encapsulating material between 1.6-1.8, volume resistance
Rate is more than 1.0 × 1016 Ω .cm, and more than 85%, light transmittance is more than 93% for light transmittance.The high index of refraction encapsulating material
More than 60%, ultraviolet ageing yellowness index is less than 4 to the degree of cross linking, and hydrothermal aging yellowness index is less than 2.Above-mentioned high index of refraction encapsulation
Material includes but is not limited to silica gel or polyurethane, and is not EVA or POE.
The refractive index of above-mentioned high index of refraction encapsulating material can reduce boundary between 1.6-1.8 in photovoltaic component encapsulating
Face is reflected, and luminous flux is improved, so as to improve the power 1%-2% of photovoltaic module.The more conventional encapsulating material of light transmittance is high, improves work(
Rate；Higher specific insulation can effectively prevent PID from failing；Low laminating temperature, low lamination times can reduce thermal losses drop
Low cost, increases production capacity.
Embodiment 1
As shown in Figure 10, the reflection stricture of vagina 9 is made up of some continuous striated grooves laterally and/or longitudinally, is formed
Waveform, reflects the width L of stricture of vagina 9 between 0.1-10mm, and the height H of crest is between 10-30 μm.Waveform reflection stricture of vagina 9
Crest and trough can be pointed shape, angle a of trough between 120-135 °, the height h of trough between 5-20 μm, adjacent two
The distance between trough K is between 0.01-0.5mm.As shown in figure 11, the trough of waveform reflection stricture of vagina 9 is alternatively circular arc, ripple
Paddy depth Q is between 0.01-0.5 μm.
Embodiment 2
As shown in figure 12, between 0.1-10mm, height H ' reflects the width L ' of the reflection stricture of vagina 9 between 10-30 μm
Stricture of vagina is the hole of falling rectangular pyramid being arranged in order, depth h in hole ' between 5-20 μm.
The present invention devises reflection stricture of vagina on high-gain orienting reflex backboard, and these reflection stricture of vaginas are filled in the space of cell piece
In, secondary reflection after light orienting reflex to glass surface can be returned to cell piece surface, the power of photovoltaic tile component is entered
One step improves 1.5%-2%.
The invention is not limited in aforesaid specific embodiment.The present invention is expanded to and any in this manual disclosed
New feature or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (8)
1. a kind of new high-gain element type photovoltaic tile, is characterized in that：Including photovoltaic tile main body (5), in photovoltaic tile main body (5)
Surrounding is sequentially provided with left frame (1), top frame (2), left frame (3), bottom frame (4), and the photovoltaic tile main body (5) is successively
Including panel (6), cell panel (7) and high-gain orienting reflex backboard (8), the cell panel (7) spliced by some cell pieces and
Into the high-gain orienting reflex backboard (8) is provided with reflection stricture of vagina (9), and reflection stricture of vagina (9) is positioned at the gap of cell piece.
2. new high-gain element type photovoltaic tile according to claim 1, is characterized in that：Reflection stricture of vagina (9) is by some
Continuous striated groove composition laterally and/or longitudinally, forms waveform, reflect the width L of stricture of vagina (9) 0.1-10mm it
Between, the height H of crest is between 10-30 μm.
3. new high-gain element type photovoltaic tile according to claim 2, is characterized in that：The ripple of waveform reflection stricture of vagina (9)
Peak and trough are pointed shape, angle a of trough between 120-135 °, the height h of trough between 5-20 μm, adjacent two ripple
The distance between paddy K is between 0.01-0.5mm.
4. new high-gain element type photovoltaic tile according to claim 2, is characterized in that：The ripple of waveform reflection stricture of vagina (9)
Paddy is circular arc, and trough depth Q is between 0.01-0.5 μm.
5. new high-gain element type photovoltaic tile according to claim 1, is characterized in that：The width of reflection stricture of vagina (9)
Between 0.1-10mm, between 10-30 μm, reflection stricture of vagina is the hole of falling rectangular pyramid being arranged in order to height H ' to L ', depth h in hole '
Between 5-20 μm.
6. new high-gain element type photovoltaic tile according to claim 1, is characterized in that：The panel (6), cell panel
(7) pass through high index of refraction encapsulating material between any two and encapsulate gluing with high-gain orienting reflex backboard (8).
7. new high-gain element type photovoltaic tile according to claim 1, is characterized in that：The bottom of adjacent two pieces of photovoltaic tiles
Frame (4) and top frame (2) are mutually clamped, and left frame (3) and left frame (1) are mutually clamped.
8. new high-gain element type photovoltaic tile according to claim 7, is characterized in that：The left frame (1) includes
One cell body (1.1), the first blend stop (1.2), the first chimb (1.3), the second blend stop (1.4), the first tube seat (1.6), fourth gear bar
(1.7), the first cell body (1.1) is opening up, and the first blend stop (1.2) and fourth gear bar (1.7), the first cell body are provided with the middle of notch
(1.1) left end is provided with first chimb (1.3), the first chimb (1.3) shape of cross section elongate configuration triangular in shape,
Second blend stop (1.4) is connected to the first cell body (1.1), and the top of the second blend stop (1.4) is horizontally arranged with third baffle
(1.5) the first tube seat (1.6), the rectangular strip of the tube seat shape of cross section, are provided with below third baffle (1.5)
Pipe fitting；
The top frame (2) includes the second cell body (2.1), the 3rd cell body (2.2), the 4th cell body (2.3), the 5th cell body
(2.4), the 3rd cell body (2.2) is open towards the right side, and the 3rd cell body (2.1) is arranged on the 3rd cell body (2.2) above, opening
Upward, the 4th cell body (2.3) is arranged on the 3rd cell body (2.2) left side, is open towards a left side, in the notch of the 4th cell body (2.3)
Middle installation sealing strip (6), the 5th cell body (2.4) is arranged on the lower section of the 3rd cell body (2.2), and open slot is to the 3rd cell body
(2.2) direction；
The left frame (3) including the 6th cell body (3.1), the 4th chimb (3.2), the second tube seat (3.3), the 3rd chimb (3.5),
6th cell body (3.1) is opening down, and the upper right corner is provided with the 4th chimb (3.2) in notch, the 4th chimb (3.2)
The elongate configuration that cross section is rectangle, the 6th cell body (3.1) upper right corner is provided with the 3rd chimb (3.5), the 3rd chimb
(3.5) cross section elongate configuration triangular in shape, the 6th cell body (3.1) left side is provided with the second tube seat (3.3)；
The bottom frame (4) includes the 7th cell body (4.1), the 3rd tube seat (4.2), the 7th blend stop (4.3), the 7th cell body
(4.1) it is opening down, multiple openings are provided with the plate in left side, the 7th cell body (4.1) left plate is provided below the 3rd tube seat
(4.2), the 7th blend stop (4.3) is arranged on the 3rd tube seat (4.2) below.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710065511.5A CN106677438A (en) | 2017-02-06 | 2017-02-06 | Novel high-gain component type photovoltaic tile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710065511.5A CN106677438A (en) | 2017-02-06 | 2017-02-06 | Novel high-gain component type photovoltaic tile |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106677438A true CN106677438A (en) | 2017-05-17 |
Family
ID=58859321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710065511.5A Pending CN106677438A (en) | 2017-02-06 | 2017-02-06 | Novel high-gain component type photovoltaic tile |
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