CN106657831A - Pixel structure, sensor and signal acquisition method - Google Patents

Pixel structure, sensor and signal acquisition method Download PDF

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CN106657831A
CN106657831A CN201611090740A CN201611090740A CN106657831A CN 106657831 A CN106657831 A CN 106657831A CN 201611090740 A CN201611090740 A CN 201611090740A CN 201611090740 A CN201611090740 A CN 201611090740A CN 106657831 A CN106657831 A CN 106657831A
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m2
reset
pixel
set
input
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CN201611090740A
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任铮
赵宇航
温建新
李琛
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上海集成电路研发中心有限公司
成都微光集电科技有限公司
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Priority to CN201611090740A priority Critical patent/CN106657831A/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/372Charge-coupled device [CCD] sensors; Time delay and integration [TDI] registers or shift registers specially adapted for SSIS
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/374Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/374Addressed sensors, e.g. MOS or CMOS sensors
    • H04N5/3745Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/376Addressing circuits

Abstract

The invention provides a pixel structure, a sensor and a signal acquisition method. The pixel structure at least comprises multiple quantum dot photosensitive resistors, multiple signal storage capacitance reset type MOS transistors and a signal reading circuit unit, wherein the signal reading circuit unit comprises a reset switch tube (M1), multiple transmission tubes (M2), a source follower (M3), a row selection switch tube (M4) and multiple pixel unit input ends. According to the pixel structure, the sensor and the signal acquisition method, detection on visible lights and short-wave infrared rays is achieved by utilizing the quantum dot photosensitive resistors as photosensitive elements, and the multiple quantum dot photosensitive resistors and the multiple signal storage capacitance reset type MOS transistors share one signal reading circuit, thereby saving the area of a pixel unit and improving fill factors.

Description

像素结构、传感器及信号采集方法 Pixel structure, the sensor and the signal acquisition method

技术领域 FIELD

[0001] 本发明涉及集成电路技术领域,具体涉及一种多量子点共享读出电路的像素结构、传感器及信号采集方法。 [0001] The present invention relates to the field of integrated circuit technology, particularly relates to the pixel structure of a multiple quantum point share readout circuitry, sensors and signal acquisition method.

背景技术 Background technique

[0002]图像传感器是指将光信号转换为电信号的装置,其可以基于电荷耦合器件(CCD)技术、互补金属氧化物半导体(CMOS)图像传感技术或基于量子点的光电探测技术进行制备得到。 [0002] The image sensor refers to an optical signal into an electrical signal, which may be based on a charge coupled device (CCD) technology, complementary metal oxide semiconductor (CMOS) image sensor technology or based on the photoelectric detection techniques were prepared QDs get.

[0003] 量子点是纳米尺寸的半导体晶粒,它具有禁带宽度随尺寸可调的的特性,其光吸收特性也是随之可调。 [0003] Quantum dots are nanometer-sized semiconductor die, having a band gap of adjustable size with characteristics that light absorption characteristic is adjustable along. 通过选择合适的量子点材料和尺寸,可以采用溶液法制备对可见光或红外高灵敏度的量子点膜,工艺简单。 By selecting a suitable material and size of quantum dots, the quantum dots prepared membrane solution or infrared high sensitivity to visible light may be employed, a simple process. 量子点制备的光电探测器具有灵敏度高,波段易调制、工艺简单成本低等优势,市场前景广阔。 Photodetector prepared quantum dots have high sensitivity, and easy modulation band, the process is simple and low cost, broad market prospect. 同硅基的CMOS图像传感器比较,对于短波红外的检测,量子点具有成本低和性能优良的特点。 Comparison with silicon-based CMOS image sensor, for detecting short-wave infrared, quantum dots have excellent performance and low cost characteristics.

[0004] 为了在硅片上实现光电集成,在过去的几十年,人们开展了大量硅基发光材料和器件的研究工作,如在硅衬底上集成II1-V族发光材料,或者制作多孔硅等。 [0004] To achieve the optoelectronic integrated on silicon, in the past few decades, there have been a lot of research work silicon-emitting materials and devices, such as integrated II1-V Group luminescent material on a silicon substrate, forming a porous or silicon. 然而,硅衬底上集成发光材料的重要因素是晶格匹配问题以及发光调制问题,而利用量子点则不需要考虑晶格匹配并且发光波长可通过粒径调控,如果能够在硅基上制作出量子点光敏电阻,并且结合业已成熟的CMOS图像传感技术,将能够制造价格更为低廉,感光波段更为宽广,灵敏度更高的硅基图像传感器。 However, an important factor in the integrated light emitting material on a silicon substrate lattice matching and a light modulation problems, while the use of quantum dots and the lattice matching is not required to consider the emission wavelength can be obtained by particle size regulation, can be fabricated on a silicon if the photoresistor quantum dots, and binds the CMOS image sensor has a mature technology, can be manufactured more affordable, the photosensitive wavelength band wider, higher sensitivity of the image sensor silicon.

发明内容 SUMMARY

[0005] 为了克服以上问题,本发明旨在提供一种多量子点共享读出电路的像素结构、传感器及ί目号米集方法。 [0005] In order to overcome the above problems, the present invention aims to provide a multi-quantum dot structure shared pixel circuit, the sensor head and the number m set ί readout method.

[0006] 为了达到上述目的,本发明提供了一种像素单元结构,至少包括:多个量子点光敏电阻、多个信号存储电容复位MOS管和一个信号读取电路单元;其中, [0006] To achieve the above object, the present invention provides a pixel cell structure, at least comprising: a plurality of quantum dots photoresistor, a plurality of signal storage capacitors MOS transistor and a reset signal reading circuit unit; wherein,

[0007] 多个量子点光敏电阻与多个信号存储电容复位MOS管之间一一对应连接,一个量子点光敏电阻对应连接一个信号存储电容复位MOS管作为一个并联单元;每个并联单元中,量子点光敏电阻的一端接参考电平Vqd,另一端与对应的另一端与复位开关管Ml的源极相连,且信号存储电容复位MOS管的源极、漏极与参考电平Vqd相连,信号存储电容复位MOS管的栅极与传输管M2的漏极相连,信号存储电容复位MOS管的体电容接地; [0007] connected to one correspondence between a plurality of quantum dots with a plurality of photoresistor signal storage capacitor reset MOS transistor, a photoresistor quantum dot corresponding to the signal storage capacitor connected to a reset MOS transistor connected in parallel as a unit; each of the parallel unit, a reference level Vqd end photoresistor quantum dots, the other end of the source corresponding to the reset switch and the other end connected to the gate of Ml, and the source signal storage capacitance reset MOS transistor, a drain connected to a reference level Vqd signal the gate of transistor M2 and the drain of the transfer MOS transistor to reset the storage capacitor is connected to the grounding capacitance signal storage capacitor reset MOS transistor;

[0008] 信号读取电路单元包括:复位开关管(Ml)、多个传输管(M2)、源跟随器(M3)、行选开关管(Μ4)和多个像素单元输入端;其中,复位开关管(Ml)的栅极接像素输入端(RX),复位开关管(Ml)的源极接每个传输管(M2)的源极至一节点(FD),复位开关管(Ml)的漏极接复位电压(Vreset);每个传输管(M2)的漏极对应连接一个量子点光敏电阻的一端以及对应连接一个信号存储电容复位MOS管的栅极,每个传输管(M2)的栅极与对应的一个像素单元输入端(TG)相连;源跟随器(M3)的漏极接电源(VDD),源跟随器(M3)的源极接行选开关管(Μ4)的漏极,源跟随器(M3)的栅极与节点(FD)相连;行选开关管(M4)的栅极与行选输入端(RS)相连,行选开关管(M4)的源极作为整个像素单元结构的输出端; [0008] The signal reading circuit unit comprises: a reset switch (of Ml), a plurality of transfer tubes (M2), a source follower (M3), line select switch (Μ4) input terminals and a plurality of pixel units; wherein the reset the gate of the pixel connected to the input terminal (RX) switch (of Ml), the reset switch (of Ml) is connected to each of the transfer tube electrode (M2) of the source to a node (FD), a reset switch (of Ml) of a drain connected to a reset voltage (Vreset is); the drain pipe corresponding to each of the transmission (M2) is connected to a quantum dot photoresistor end and a gate connected to a signal storage capacitor corresponding to a reset MOS transistor, each of the transfer tube (M2) of drain of the source follower (M3) is connected to the power supply (VDD), the source of the source follower (M3) connected to the source line select switch (Μ4); a gate of a corresponding pixel unit input terminal (TG) is connected to , a source follower (M3) and a gate node (FD) is connected; line select switch (M4) and the gate of the row select input (RS) connected to a source line select switch (M4) of the pixel electrode as a whole, the output end of the cell structure;

[0009] 其中,曝光时,信号读取电路单元在曝光时间内将量子点光敏电阻流出的电流进行积分得到光生电压,当入射到量子点光敏电阻上的光线的强弱发生改变时导致量子点光敏电阻的阻值发生改变,从而改变流经量子点光敏电阻的电流,并且最终导致光生电压的数值发生改变。 [0009] wherein, when the exposure, signal reading circuit unit within the exposure time quantum dot photoresistor integral of the current flowing photovoltage, resulting in a quantum dot when the intensity of light incident on changes quantum dot photoresistor photosensitive resistor is changed, thereby changing the current flowing through the quantum dot photoresistor, and eventually photovoltage value is changed.

[0010] 优选地,量子点光敏电阻的数量、信号存储电容复位MOS管的数量、传输管(M2)的数量相同。 [0010] Preferably, the number of quantum dots photoresistor, the number of signal storage capacitor the reset MOS transistor, the same number of transfer tubes (M2) is.

[0011] 优选地,所述量子点光敏电阻包括可见光敏感量子点和红外光敏感量子点。 [0011] Preferably, the quantum dot light-sensitive photoresistor sensitive to visible light includes the quantum dot, and quantum dot infrared.

[0012] 为了达到上述目的,一种图像传感器,采用上述任一项所述的像素单元结构。 [0012] To achieve the above object, an image sensor using the pixel cell structure according to any of the foregoing.

[0013] 为了达到上述目的,一种采用上述的像素单元结构所进行的信号采集方法,包括以下步骤: [0013] To achieve the above object, a method of using the above-described signal acquisition performed pixel unit structure, comprising the steps of:

[0014] 步骤01:将像素输入端(RX)和多个像素单元输入端(TG)置为高电平,复位开关管(Ml)和多个传输管(M2)开启;将行选输入端(RS)置为低电平,行选开关管(M4)关断,此时,信号存储电容复位MOS管和量子点光敏电阻复位; [0014] Step 01: the input pixel (RX) input terminals and a plurality of pixel cells (TG) is set to a high level, the reset switch (of Ml) and a plurality of transfer tubes (M2) is turned on; the row select input (RS) is set to a low level, the row select switch (M4) is turned off, this time, the signal storage capacitor the reset MOS transistor and a quantum dot light-sensitive resistance reset;

[0015] 步骤02:将其中一个像素单元输入端(TG)置为高电平,其它像素单元输入端(TG)置为低电平,将其它像素单元输入端(TG)对应的传输管(M2)关断;将像素输入端(RX)置为高电平,复位开关管(Ml)和所述其中一个像素单元输入端(TG)对应的传输管(M2)开启,其它像素单元输入端(TG)对应的其它传输管(M2)关断;再将行选输入端(RS)置为低电平,行选开关管(M4)关断,此时,对所开启的传输管(M2)对应连接的量子点光敏电阻和信号存储电容复位MOS管开始曝光,并且开始对量子点光敏电阻流出的电流进行积分;然后,若对所有的量子点光敏电阻和信号存储电容复位MOS管都开始曝光,并且都开始对所对应的量子点光敏电阻流出的电流进行积分执行步骤04;若没有,则执行步骤03; [0015] Step 02: a pixel unit in which the input terminal (TG) is set to a high level, the other input terminal of the pixel unit (TG) is set to a low level, the other input terminal of the pixel unit (TG) corresponding to the transfer tube ( M2) is turned off; the pixels of the input terminal (RX) is set to a high level, the reset switch (of Ml) and wherein said input means a pixel (TG) corresponding to the transfer tube (M2) is turned on, the other input terminal of the pixel unit (TG) corresponding to the other transmission pipe (M2) is turned off; then selected from the line input (RS) is set to a low level, the row select switch (M4) is turned off, this time, the opening of the transport tube (M2 ) quantum dots corresponding to the connection photoresistor and signal storage capacitance reset MOS transistor starting exposure, current starts quantum dot photoresistor flowing and integrating; then, if both the start of all the quantum dot light-sensitive resistor and the signal storage capacitance reset MOS transistor exposure, and both begin integrating current step of quantum dots corresponding to the photoresistor 04 flows out; if not, execute step 03;

[0016] 步骤03:将所有的像素单元输入端(TG)置为低电平,步骤02中所开启的传输管(M2)关断;重复步骤02,直至对所有的量子点光敏电阻和信号存储电容复位MOS管都开始曝光,并且都开始对所对应的量子点光敏电阻流出的电流进行积分; [0016] Step 03: all input pixel unit (TG) is set to transfer tubes (M2) is turned off in a low level, the open step 02; step 02 is repeated until all of the signals and quantum dots photoresistor the storage capacitor begins resetting MOS transistor are exposed, and both start current corresponding to the quantum dot photoresistor integrating flowing;

[0017] 步骤04:将像素输入端(RX)、所有的像素单元输入端(TG)置为低电平,复位开关管(Ml)和所有的传输管(M2)关断;再将像素输入端(RX)置为低电平,复位开关管(Ml)关断;此时,节点(FD)处于第一复位电平; [0017] Step 04: the input pixel (the RX), all of the pixel input unit (TG) is set to a low level, the reset switch (of Ml) and all of the transfer tube (M2) is turned off; and then a pixel input end (RX) is set to a low level, the reset switch (of Ml) off; in this case, the node (FD) in a first reset level;

[0018] 步骤05:将所有的像素单元输入端(TG)置为低电平,所有的传输管(M2)关断;将像素输入端(RX)置为低电平,复位开关管(Ml)关断;将行选输入端(RS)置为高电平,行选开关管(M4)开启;此时,节点(FD)通过源跟随器(M3)向外输出电压信号,对像素单元进行第一次采样,从而得到第一个复位电平采样结果; [0018] Step 05: all input pixel unit (TG) is set to low, all of the transfer tube (M2) is turned off; the pixels of the input terminal (RX) is set to a low level, the reset switch (of Ml ) off; the row select input (RS) is set to a high level, the row select switch (M4) is turned on; In this case, the node (FD) outwardly through the output voltage signal of the source follower (M3), the pixel unit performing a first sample, whereby the first reset level sampling result;

[0019] 步骤06:将其中一个像素单元输入端(TG)置为高电平,该其中一个像素单元输入端(TG)对应的传输管(M2)开启;将像素输入端(RX)和其它的传输管(M2)置为低电平,复位开关管(Ml)和其它的传输管(M2)关断;此时,积分时间结束,在该积分时间内,量子点光敏电阻的光生电流通过积分获得了光生电压,并且通过所开启的传输管(M2)传递给了节点(FD),从而使得节点(FD)处于第一个信号电平状态; [0019] Step 06: a pixel unit in which the input terminal (TG) is set to a high level, a pixel unit in which the input terminal (TG) corresponding to the transfer tube (M2) is turned on; the pixel input (RX) and other the transfer tube (M2) is set to a low level, the reset switch (of Ml) and other transfer tube (M2) is turned off; at this time, the end of the integration time, within the integration time, the photocurrent quantum dot by photoresistor obtained by integrating the photovoltage, and transmitted to the node (FD) is opened by the delivery tube (M2), so that the node (FD) is in the first state of a signal level;

[0020] 步骤07:将所有的像素单元输入端(TG)置为低电平,所有的传输管(M2)关断;将像素输入端(RX)置为低电平,复位开关管(Ml)关断;将行选输入端(RS)置为高电平,行选开关管(M4)开启;此时,节点(FD)通过源跟随器(M3)向外输出电压信号,对像素单元进行第二次采样,从而得到第一个信号电平采样结果;若得到所有的传输管(M2)开启时所的对应的信号电平的采样,则执行步骤10;若没有,则执行步骤08; [0020] Step 07: all input pixel unit (TG) is set to low, all of the transfer tube (M2) is turned off; the pixels of the input terminal (RX) is set to a low level, the reset switch (of Ml ) off; the row select input (RS) is set to a high level, the row select switch (M4) is turned on; In this case, the node (FD) outwardly through the output voltage signal of the source follower (M3), the pixel unit a second sample to obtain a first signal level sampling result; signal level corresponding to the samples, the step 10 is executed if all of the obtained transfer tube (M2) is turned on; if not, proceed to step 08 ;

[0021] 步骤08:将所有的像素单元输入端(TG)置为低电平,步骤02中所述的其它传输管(M2)关断;将步骤02中所述的其中一个像素单元输入端(TG)置为高电平,复位开关管(Ml)开启,所有传输管(M2)关断;将行选输入端(RS)置为低电平,行选开关管(M4)关断,此时,节点(FD)被重新置位; [0021] Step 08: all input pixel unit (TG) is set to low, in step 02 the other transfer tube (M2) is turned off; and a step wherein said pixel input unit 02 (TG) is set to a high level, the reset switch (of Ml) is turned on, all transfer tube (M2) is turned off; the row select input (RS) is set to a low level, the row select switch (M4) is turned off, In this case, the node (FD) is set again;

[0022] 步骤09:重复步骤04至步骤07,直至得到所有的传输管(M2)开启时所的对应的信号电平的米样; [0022] Step 09: Repeat step 04 to step 07, until a signal level corresponding to the sample rice all the transfer tube (M2) is turned on;

[0023] 步骤10:将所有的像素单元输入端(TG)置为高电平,所有的传输管(M2)开启;将像素输入端(RX)置为高电平,复位开关管(Ml)开启;将行选输入端(RS)置为低电平,行选开关管(M4)关断;此时,整个像素单元结构的输出端处于高阻态,所有的量子点光敏电阻和信号存储电容复位MOS管均被复位,节点(FD)被复位。 [0023] Step 10: all input pixel unit (TG) is set high, all of the transfer tube (M2) is turned on; the pixel input (RX) is set to a high level, the reset switch (of Ml) open; row select input (RS) is set to a low level, the row select switch (M4) is turned off; at this time, the output of the entire configuration of a unit pixel is in a high impedance state, all of the quantum dots and the signal storage photoresistor capacitance reset MOS transistor are reset, the node (FD) is reset.

[0024] 优选地,所述像素单元输入端(TG)的数量、传输管(M2)的数量、量子点光敏电阻的数量、信号存储电容复位MOS管的数量相同。 Quantity [0024] Preferably, the number of the pixel unit input terminal (TG), the number of transfer tubes (M2), the quantum dot light-sensitive resistors, the same number of signal storage capacitance reset MOS transistor.

[0025] 优选地,所述量子点光敏电阻包括可见光敏感量子点和红外光敏感量子点。 [0025] Preferably, the quantum dot light-sensitive photoresistor sensitive to visible light includes the quantum dot, and quantum dot infrared.

[0026] 本发明的像素结构中,多个量子点光敏电阻和多个信号存储电容复位MOS管共享了一组信号读取电路,从而节省了像素单元面积,提高了填充因子。 [0026] The pixel structure of the present invention, the plurality of quantum dots and a plurality of photosensitive resistance MOS transistor to reset the signal storage capacitor to share a set of signal reading circuit, thereby saving unit pixel area, the fill factor improves.

附图说明 BRIEF DESCRIPTION

[0027]图1为本发明的一个较佳实施例的像素结构的电路示意图 A circuit diagram of a pixel structure of the preferred embodiment [0027] of the present invention. FIG. 1

[0028]图2为本发明的一个较佳实施例的对像素结构进行信号采集时序示意图 [0028] FIG 2 a preferred embodiment of the present invention, a signal acquisition timing diagram of a pixel structure

具体实施方式 Detailed ways

[0029] 为使本发明的内容更加清楚易懂,以下结合说明书附图,对本发明的内容作进一步说明。 [0029] To make the present invention more clearly understood, the following description in conjunction with the accompanying drawings, the present invention will be further described. 当然本发明并不局限于该具体实施例,本领域内的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。 Of course, the present invention is not limited to this specific example embodiments, those skilled in the art generally known alternative also encompassed within the scope of the present invention.

[0030]以下结合附图1-2和具体实施例对本发明作进一步详细说明。 [0030] 1-2 and described specific embodiments of the present invention in further detail below in conjunction with the accompanying drawings. 需说明的是,附图均采用非常简化的形式、使用非精准的比例,且仅用以方便、清晰地达到辅助说明本实施例的目的。 It should be noted that the drawings are used in a very simplified form, a non-precise scale and only convenient, clearly achieve the objectives of assistance in explaining the embodiment.

[0031] 请参阅图1,本实施例的一种像素单元结构,量子点光敏电阻的数量、信号存储电容复位MOS管的数量、传输管M2的数量相同,均为两个。 [0031] Referring to FIG. 1, the structure of the present embodiment, the number of quantum dot photoresistor, the number of signal storage capacitor the reset MOS transistor, the same number of transfer transistor M2, two cases are a pixel unit. 其具体包括:两个量子点光敏电阻1-1、1-2、两个信号存储电容复位MOS管2-1、2-2和一个信号读取电路单元3;量子点光敏电阻 Which comprises: a quantum dot two photoresistors 1-1, 1-2, two signal storage capacitance reset MOS transistor 2-1, 2-2 and a signal reading circuit unit 3; quantum dot photoresistor

1-1、1-2可以包括可见光敏感量子点和红外光敏感量子点。 1-1 and 1-2 may comprise a visible light sensitive and infrared light sensitive quantum dots quantum dots.

[0032] 两个量子点光敏电阻1-1、1-2与两个信号存储电容复位MOS管2-1、2_2之间对应连接,量子点光敏电阻1-1对应连接信号存储电容复位MOS管2-1作为一个并联单元,量子点光敏电阻1-2对应连接信号存储电容复位MOS管2-2作为一个并联单元;每个并联单元中,量子点光敏电阻1-1的一端接参考电平Vqd,另一端与复位开关管Ml的源极相连,且信号存储电容复位MOS管2-1的源极、漏极与参考电平Vqd相连,信号存储电容复位MOS管2-1的栅极与对应的传输管M2-1的漏极相连,信号存储电容复位MOS管2-1的体电容接地;量子点光敏电阻1-2的一端接参考电平Vqd,另一端与对应的信号存储电容复位MOS管2-2的源极相连,且信号存储电容复位MOS管2-2的源极、漏极与参考电平Vqd相连,信号存储电容复位MOS管 [0032] photoresistor two quantum dots 1-1 and 1-2 of the two signals corresponding to the reset MOS storage capacitor connected between the 2-1,2_2 tube, a quantum dot photoresistor 1-1 corresponding to the signal storage capacitor connected to a reset MOS transistor as a parallel unit 2-1, 1-2 photoresistor quantum dots corresponding to the signal storage capacitor connected to a reset MOS transistor connected in parallel as a unit 2-2; each of the parallel unit, one end of the quantum dot photoresistor reference level 1-1 VQD, the other end of the source electrode of the reset switch Ml is connected to the signal storage capacitor and the source of the reset MOS transistor 2-1, a drain connected to a reference level VQD, the signal storage capacitor the reset MOS transistor and the gate 2-1 the drain of the corresponding transfer tube connected to M2-1, a signal storage capacitor reset MOS capacitor to ground the tubular body 2-1; quantum dot photoresistor one end of the reference level Vqd 1-2, the other end of the storage capacitor corresponding to a reset signal MOS transistor is connected to the source electrode 2-2 and the signal storage capacitor 2-2 is reset MOS transistor source electrode, the drain is connected to a reference level Vqd, the signal storage capacitor reset MOS transistor

2-2的体电容接地。 2-2 bulk capacitance to ground.

[0033] 信号读取电路单元包括:复位开关管Ml、两个传输管M2-UM2-2,源跟随器M3、行选开关管M4和多个像素单元输入端TG-1、TG-2;其中,复位开关管Ml的栅极接像素输入端RX,复位开关管Ml的源极连接传输管M2-1和M2-2的源极至一节点H),复位开关管Ml的漏极接复位电压Vr e se t;传输管M2-1的漏极对应连接量子点光敏电阻I _1的一端以及对应连接信号存储电容复位MOS管2-1的栅极,传输管M2-2的漏极对应连接量子点光敏电阻I _2的一端以及对应连接信号存储电容复位MOS管2-2的栅极。 [0033] The signal reading circuit unit comprises: a reset switch Ml, two transfer tubes M2-UM2-2, source follower M3, M4 row select switch input terminals and a plurality of pixel units TG-1, TG-2; wherein a gate connected to an input terminal RX pixel reset switch Ml, the source of the reset switch Ml is connected to the transfer tube M2-1 and M2-2 source to a node H), a drain connected to the reset of the reset switch Ml voltage Vr e se t; end corresponding to the drain of the transfer tube is connected to the quantum dot M2-1 photoresistor I _1 and the corresponding signal storage capacitor connected to the gate of the reset MOS transistor 2-1, a drain connected to the corresponding transfer tubes M2-2 One end of the photoresistor I _2 quantum dots and the corresponding signal storage capacitor connected to the gate of the reset MOS transistor 2-2.

[0034] 传输管M2-1的栅极与对应的像素单元输入端TG-1相连,传输管M2-2的栅极与对应的像素单元输入端TG-2相连;源跟随器M3的漏极接电源VDD,源跟随器M3的源极接行选开关管M4的漏极,源跟随器M3的栅极与节点H)相连;行选开关管M4的栅极与行选输入端RS相连,行选开关管M4的源极作为整个像素单元结构的输出端; [0034] The gate of the corresponding pixel input unit M2-1 transfer tube connected to the TG-1, a gate connected to an input terminal corresponding to the pixel unit transfer tubes M2-2 of TG-2; a drain of the source follower M3 then the VDD power supply, the source-follower M3 is connected to a source row select switch transistor M4 is the drain, the gate of the source follower M3 and node H) is connected; row select switch connected to the gate of the row select input of the RS M4, row select switch transistor M4, the source electrode as an output terminal of the entire pixel unit structure;

[0035] 其中,曝光时,信号读取电路单元在曝光时间内将量子点光敏电阻流出的电流进行积分得到光生电压,当入射到量子点光敏电阻上的光线的强弱发生改变时导致量子点光敏电阻的阻值发生改变,从而改变流经量子点光敏电阻的电流,并且最终导致光生电压的数值发生改变。 [0035] wherein, when the exposure, signal reading circuit unit within the exposure time quantum dot photoresistor integral of the current flowing photovoltage, resulting in a quantum dot when the intensity of light incident on changes quantum dot photoresistor photosensitive resistor is changed, thereby changing the current flowing through the quantum dot photoresistor, and eventually photovoltage value is changed.

[0036] 本实施例还提供了一种图像传感器,其采用本实施例的上述像素单元结构。 [0036] The present embodiment further provides an image sensor which employs the above-described pixel cell structure according to the present embodiment.

[0037] 本实施例还提供了一种采用本实施例的上述像素单元结构所进行的信号采集方法,如图2所示,为本实施例的对像素结构进行信号采集时序示意图,图2中,Exp time表示曝光时间,TG time表示两组像素单元输入端TG-1和TG-2之间的曝光开始的间隔时间,请结合图1和图2,本实施例的信号采集方法包括以下步骤: [0037] The present embodiment further provides a method for signal acquisition according to the present embodiment using the above-described embodiment of the structure for the pixel unit, as shown, the present embodiment of the signal acquisition timing diagram of the pixel structure 2, 2 in FIG. , Exp time represents the exposure time, TG time interval represents the start of the exposure unit between two sets of input pixel TG-1 and TG-2, please FIG. 1 and FIG. 2, the signal acquisition method according to the present embodiment comprises the steps of :

[0038] 步骤01:将像素输入端RX和多个像素单元输入端TG置为高电平,复位开关管Ml和多个传输管M2开启;将行选输入端RS置为低电平,行选开关管M4关断,此时,信号存储电容复位MOS管和量子点光敏电阻复位; [0038] Step 01: the input terminal RX and the pixels a plurality of pixel cells set to open the input terminal TG is high, the reset switch and a plurality of transfer tubes Ml M2; RS row select input is set low, the line selected switching transistor M4 is turned off, this time, the signal storage capacitor the reset MOS transistor and a quantum dot light-sensitive resistance reset;

[0039]具体的,这里将像素输入端RX和像素单元输入端TG-1、TG-2置为高电平,复位开关管Ml和传输管M2-1和M2-2开启;将行选输入端RS置为低电平,行选开关管M4关断,此时,信号存储电容复位MOS管和量子点光敏电阻复位。 [0039] Specifically, the pixel where the pixel input unit and the input terminal RX TG-1, TG-2 is set to high, and the reset switch Ml M2-1 and M2-2 open transfer tubes; is selected from the input line end RS is set low, the row select switch transistor M4 is turned off, this time, the signal storage capacitor the reset MOS transistor and a quantum dot light-sensitive resistance reset.

[0040] 步骤02:将其中一个像素单元输入端TG置为高电平,其它像素单元输入端TG置为低电平,将其它像素单元输入端TG对应的传输管M2关断;将像素输入端RX置为高电平,复位开关管Ml和所述其中一个像素单元输入端TG对应的传输管M2开启,其它像素单元输入端TG对应的其它传输管M2关断;再将行选输入端RS置为低电平,行选开关管M4关断,此时,对所开启的传输管M2对应连接的量子点光敏电阻和信号存储电容复位MOS管开始曝光,并且开始对量子点光敏电阻流出的电流进行积分;然后,若对所有的量子点光敏电阻和信号存储电容复位MOS管都开始曝光,并且都开始对所对应的量子点光敏电阻流出的电流进行积分执行步骤04;若没有,则执行步骤03; [0040] Step 02: a pixel unit in which the input terminal is set to high TG, TG other input terminal of the pixel unit is set to low, the other input terminal of the pixel units corresponding to TG transfer tubes M2 is turned off; the pixels of the input RX terminal is set to the high level, the reset switch Ml and the input of one pixel unit corresponding to TG transfer transistor M2 is turned on, the other transfer transistor M2 other pixel cells corresponding to an input terminal TG is turned off; then selected from the line input terminal RS is set low, the row select switch transistor M4 is turned off, this time, the opening of the quantum dot corresponding to a transmission transistor M2 is connected to the signal storage capacitor photoresistor and a reset MOS transistor starting exposure, and starts flowing out of the quantum dot photoresistor current integrating; current then, when all starting the exposure of all of the quantum dot light-sensitive resistor and the signal storage capacitance reset MOS transistor, and are beginning quantum dot photoresistor corresponding outflow integrating step 04; if not, perform step 03;

[0041]具体的,将像素单元输入端TG-1置为低电平,将像素单元输入端TG-1对应的传输管M2-1关断;将像素输入端RX置为高电平,像素单元输入端TG-2置为高电平,复位开关管Ml和像素单元输入端TG-2对应的传输管M2-2开启,像素单元输入端TG-1对应的传输管M2-1关断;再将行选输入端RS置为低电平,行选开关管M4关断,此时,对所开启的传输管M2-2对应连接的量子点光敏电阻1-2和信号存储电容复位MOS管2-2开始曝光,并且开始对量子点光敏电阻1-2流出的电流进行积分;此时,由于传输管M2-1对应连接的量子点光敏电阻1-1和信号存储电容复位MOS管2-1还未开始曝光,并且开始对量子点光敏电阻1-1流出的电流还未开始积分,则执行步骤03; [0041] Specifically, the input terminal of the unit pixel TG-1 is set to a low level, the input terminal of the pixel unit corresponding to TG-1 M2-1 off transfer tube; RX input pixel is set to high, the pixel TG-2 cell input terminal is set to high, the switch Ml and the reset input terminal of the pixel unit transfer tubes M2-2 TG-2 corresponding to the opening, the pixel unit input terminal TG-1 corresponding to the transfer tube M2-1 off; then RS row select input is set low, the row select switch transistor M4 is turned off, this time, the quantum dot photoresistor M2-2 open conveyor pipe is connected corresponding to the signal storage capacitor 1-2 and the reset MOS transistor 2-2 starting exposure, quantum dots and starts current flowing photoresistor integrating 1-2; At this time, since the quantum dots photoresistor M2-1 transfer tube connected to the corresponding signal storage capacitor 11 and a reset MOS transistor 2- 1 has not yet started the exposure, and the current starts flowing quantum dot photoresistor 1-1 of integration has not yet begun, the step 03 is executed;

[0042] 步骤03:将所有的像素单元输入端TG置为低电平,步骤02中所开启的传输管M2关断;重复步骤02,直至对所有的量子点光敏电阻和信号存储电容复位MOS管都开始曝光,并且都开始对所对应的量子点光敏电阻流出的电流进行积分; [0042] Step 03: the input of all pixel units TG transfer transistor M2 is set to a low level in step 02 turned off; repeat step 02 until the photosensitive resistance and the signal storage capacitor reset MOS all quantum dots tubes are exposure is started, and the quantum dots are beginning photoresistor current flowing out of the corresponding integrating;

[0043]具体的,将像素单元输入端TG-1和TG-2置为低电平,步骤02中所开启的传输管M2-2关断;接下来,该进行对量子点光敏电阻和信号存储电容复位MOS管的曝光,并且对所对应的量子点光敏电阻流出的电流的积分,则重复步骤02,具体包括: [0043] Specifically, the input terminal of the unit pixel TG-1 and TG-2 set to the low level delivery tube M2-2, step 02 turned off; Subsequently, the photoresistor for signals of quantum dots and exposing the storage capacitor the reset MOS transistor, and out of the quantum dot photoresistor corresponding to the integrated current, step 02 is repeated, comprises:

[0044] 将像素单元输入端TG-2置为低电平,将像素单元输入端TG-2对应的传输管M2-2关断;将像素输入端RX置为高电平,像素单元输入端TG-1置为高电平,复位开关管Ml和像素单元输入端TG-1对应的传输管M2-1开启,像素单元输入端TG-2对应的传输管M2-2关断;再将行选输入端RS置为低电平,行选开关管M4关断,此时,对所开启的传输管M2-1对应连接的量子点光敏电阻1-1和信号存储电容复位MOS管2-1开始曝光,并且开始对量子点光敏电阻1-1流出的电流进行积分;此时,由于传输管M2-1对应连接的量子点光敏电阻1-1和信号存储电容复位MOS管2-1、以及传输管M2-2对应连接的量子点光敏电阻1-2和信号存储电容复位MOS管2-2都开始曝光和积分,则执行步骤04; [0044] The pixel unit input terminal TG-2 to a low level, the input terminal of the pixel unit corresponding to TG-2-transfer tubes M2-2 off; RX input pixels set high, the pixel input unit TG-1 is set to high, the switch Ml and the reset input terminal of the pixel unit corresponding to the TG-1 M2-1 open the transfer tube, the pixel input unit corresponding to TG-2 M2-2 off transfer tube; then OK select input RS is set to a low level, the row select switch transistor M4 is turned off, this time, to open the transfer tube M2-1 corresponding to the quantum dot light-sensitive resistors connected in the signal storage capacitor 11 and a reset MOS transistor 2-1 starting exposure, quantum dots and starts current flowing photoresistor integrating 1-1; At this time, since the quantum dots photoresistor M2-1 transfer tube connected to the corresponding signal storage capacitor 11 and a reset MOS transistor 2-1, and quantum dot photoresistor M2-2 transfer tube connected to the corresponding signal storage capacitor 1-2 and 2-2 are reset MOS transistor and the start of exposure integration, execute step 04;

[0045] 步骤04:将像素输入端RX、所有的像素单元输入端TG置为低电平,复位开关管Ml和所有的传输管M2关断;再将像素输入端RX置为低电平,复位开关管Ml关断;此时,节点H)处于第一复位电平; [0045] Step 04: RX input pixels, all of the input pixel cells set to low TG, a reset switch Ml and M2 all off transfer tube; then a pixel input RX is set low, reset switch Ml is turned off; in this case, node H) is in the first reset level;

[0046]具体的,将像素输入端RX、所有的像素单元输入端TG-1、TG_2置为低电平,复位开关管Ml和所有的传输管M2-UM2-2关断;再将像素输入端RX置为低电平,复位开关管Ml关断;此时,节点FD处于第一复位电平Vreset I。 [0046] Specifically, the RX input of the pixel, the pixel units of all input terminal TG-1, TG_2 set to low, all the reset switch Ml and M2-UM2-2 the transfer tube off; then a pixel input terminal RX is set low, the reset switch Ml is turned off; at this time, a first node FD is reset level Vreset I.

[0047] 步骤05:将所有的像素单元输入端TG置为低电平,所有的传输管M2关断;将像素输入端RX置为低电平,复位开关管Ml关断;将行选输入端RS置为高电平,行选开关管M4开启;此时,节点H)通过源跟随器M3向外输出电压信号,对像素单元进行第一次采样Cl,从而得到第一个复位电平采样结果; [0047] Step 05: all input pixel unit TG is set to low, all the transfer transistor M2 is turned off; RX input pixel is set to the low level, the reset switch Ml is turned off; the row select input set terminal of the RS is turned high, row select switch M4; In this case, node H) outwardly through the output voltage signal of the source follower M3, the first unit pixel sampling Cl, to thereby obtain a first reset level sampling results;

[0048]具体的,将所有的像素单元输入端TG-1、TG-2置为低电平,所有的传输管M2-UM2-2关断;将像素输入端RX置为低电平,复位开关管Ml关断;将行选输入端RS置为高电平,行选开关管M4开启;此时,节点H)通过源跟随器M3向外输出电压信号,对像素单元进行第一次采样Cl,从而得到第一个复位电平采样结果。 [0048] Specifically, the input terminals of all the pixel cells TG-1, TG-2 to a low level, all the transfer tube M2-UM2-2 off; RX input pixel is set to a low level, the reset switching transistor Ml is turned off; the row select input RS is high is set open, the row select switch M4; In this case, node H) outwardly through the output voltage signal of the source follower M3, the first unit pixel sample cl, thereby obtaining a first reset level sampling results.

[0049] 步骤06:将其中一个像素单元输入端TG置为高电平,该其中一个像素单元输入端TG对应的传输管M2开启;将像素输入端RX和其它的传输管M2置为低电平,复位开关管Ml和其它的传输管M2关断;此时,积分时间结束,在该积分时间内,量子点光敏电阻的光生电流通过积分获得了光生电压,并且通过所开启的传输管M2传递给了节点H),从而使得节点H)处于第一个信号电平状态; [0049] Step 06: a pixel unit in which TG is set to the high level input, wherein the input terminal of one pixel unit corresponding to TG transfer transistor M2 is turned on; an input terminal RX and the pixels of the other transistor M2 is set to a low transmission power level, the reset switch Ml and the other transfer transistor M2 is turned off; at this time, the integration time ends, within the integration time, the photocurrent quantum dot photoresistor obtained photovoltage by an integrator, and through the opening of transfer tube M2 It passed to node H), so that the node H) is in the first state of a signal level;

[0050]具体的,将像素单元输入端TG-1置为高电平,像素单元输入端TG-1对应的传输管M2-1开启;将像素输入端RX和传输管M2-2置为低电平,复位开关管Ml和传输管M2-2关断;此时,积分时间结束,在该积分时间内,量子点光敏电阻1-1的光生电流通过积分获得了光生电压,并且通过所开启的传输管M2-1传递给了节点ro,从而使得节点ro处于第一个信号电平状态; [0050] Specifically, the input terminal of the pixel cell is set to high TG-1, a pixel unit input terminal TG-1 corresponding to the transfer tube M2-1 open; the input terminal RX and a pixel transfer tubes placed in a lower M2-2 level, the reset switch Ml is turned off and the transfer tube M2-2; at this time, the end of the integration time, within the integration time, the quantum dot photoresistor 1-1 photocurrent obtained by integrating the photovoltage, and through the opening the transfer tube is transmitted to the node M2-1 ro, ro nodes so that a signal level is in the first state;

[0051] 步骤07:将所有的像素单元输入端TG置为低电平,所有的传输管M2关断;将像素输入端RX置为低电平,复位开关管Ml关断;将行选输入端RS置为高电平,行选开关管M4开启;此时,节点H)通过源跟随器M3向外输出电压信号,对像素单元进行第二次采样C2,从而得到第一个信号电平采样结果;若得到所有的传输管M2开启时所的对应的信号电平的采样,则执行步骤10;若没有,则执行步骤08; [0051] Step 07: all input pixel unit TG is set to low, all the transfer transistor M2 is turned off; RX input pixel is set to the low level, the reset switch Ml is turned off; the row select input set terminal of the RS is turned high, row select switch M4; In this case, node H) outwardly through the output voltage signal of the source follower M3, the second unit pixel samples C2, to thereby obtain a first signal level sampling result; when the sample to give a signal level corresponding to all of the transfer transistor M2 is turned on, execute step 10; if not, execute step 08;

[0052]具体的,将像素单元输入端TG-UTG-2置为低电平,所有的传输管M2-UM2-2关断;将像素输入端RX置为低电平,复位开关管Ml关断;将行选输入端RS置为高电平,行选开关管M4开启;此时,节点FD通过源跟随器M3向外输出电压信号,对像素单元进行第二次采样C2,从而得到第一个信号电平采样结果;然后,由于还没有得到传输管M2-2开启时所的对应的信号电平的采样,则执行步骤08; [0052] Specifically, the input pixel unit TG-UTG-2 is set to a low level, all the transfer tube M2-UM2-2 off; RX input pixel is set to the low level, the reset switch Ml Off break; RS row select input is set high, the row select switch transistor M4 is turned on; At this time, the output voltage signal node FD outwardly through the source follower M3, the second unit pixel samples C2, to obtain the first a signal level sampling result; then, since the signal level has not yet been sampled when the corresponding transfer tubes of the M2-2 open, execute step 08;

[0053] 步骤08:将所有的像素单元输入端TG置为低电平,步骤02中所述的其它传输管M2关断;将步骤02中所述的其中一个像素单元输入端TG置为高电平,复位开关管Ml开启,所有传输管M2关断;将行选输入端RS置为低电平,行选开关管M4关断,此时,节点FD被重新置位; [0053] Step 08: all input pixel cells set to low TG, step M2 is turned off the other transfer tube 02 as described in; and wherein the step of a pixel input unit 02 of the TG is set high in level, the reset switch Ml is turned on, M2 is turned off all transfer tubes; RS row select input is set low, the row select switch transistor M4 is turned off, this time, node FD is set again;

[0054]具体的,将所有的像素单元输入端TG-1、TG_2置为低电平,传输管M2-1关断;将像素单元输入端TG-1置为高电平,复位开关管Ml开启,所有传输管M2-1、M2-2关断;将行选输入端RS置为低电平,行选开关管M4关断,此时,节点FD被重新置位; [0054] Specifically, the input terminals of all the pixel cells TG-1, TG_2 set low transfer tubes M2-1 off; the input pixel unit is set to high TG-1, a reset switch Ml open all transfer tubes M2-1, M2-2 off; RS row select input is set low, the row select switch transistor M4 is turned off, this time, node FD is set again;

[0055] 步骤09:重复步骤04至步骤07,直至得到所有的传输管M2开启时所的对应的信号电平的采样; [0055] Step 09: Repeat step 04 to step 07, until a signal level of all the samples corresponding to the transmission of the transistor M2 is turned on;

[0056]具体的,接下来对传输管M2-2开启时所的对应的信号电平的采样,重复步骤04-07,具体包括: [0056] Specifically, the next sample of signal level corresponding to the transmission tube M2-2 open, repeat steps 04-07, comprises:

[0057] 步骤04 ',将像素输入端RX、所有的像素单元输入端TG-1、TG-2置为低电平,复位开关管Ml和所有的传输管M2-UM2-2关断;再将像素输入端RX置为低电平,复位开关管Ml关断;此时,节点FD处于第二复位电平(Vreset 2)。 [0057] Step 04 ', the RX input of the pixel, the pixel units of all input terminals TG-1, TG-2 to a low level, the reset switch Ml and all transfer tubes M2-UM2-2 off; then RX input pixel is set to the low level, the reset switch Ml is turned off; in this case, at the second node FD reset level (Vreset 2).

[0058] 步骤05',将像素单元输入端TG-1、TG-2置为低电平,传输管M2-1、M2_2关断;将像素输入端RX置为低电平,复位开关管Ml关断;将行选输入端RS置为高电平,行选开关管M4开启;此时,节点H)通过源跟随器M3向外输出电压信号,对像素单元进行第三次采样C3,从而得到第二个复位电平采样结果。 [0058] Step 05 ', the input unit pixel TG-1, TG-2 to a low level, transfer tubes M2-1, M2_2 off; RX input pixel is set to the low level, the reset switch Ml off; the row select input RS is high is set open, the row select switch M4; In this case, node H) outwardly through the output voltage signal of the source follower M3, the third pixel unit samples C3, whereby to give a second reset level sampling results.

[0059] 步骤06',将像素单元输入端TG-2置为高电平,像素单元输入端TG-2对应的传输管M2-2开启;将像素输入端RX和传输管M2-1置为低电平,复位开关管Ml和传输管M2-1关断;此时,积分时间结束,在该积分时间内,量子点光敏电阻1-2的光生电流通过积分获得了光生电压,并且通过所开启的传输管M2-2传递给了节点H),从而使得节点H)处于第二个信号电平状态; [0059] Step 06 ', the input terminal of the pixel cell is set to high TG-2, pixel cells corresponding to an input terminal TG-2 M2-2 open conveyor pipe; RX and the pixels of the input terminal is set to transfer tubes M2-1 low, the reset switch Ml is turned off and the transfer tube M2-1; at this time, the end of the integration time, within the integration time, the quantum dot photoresistor 1-2 of photo-generated current is obtained by integrating the photogenerated voltage, and by the M2-2 open the transfer tube is transmitted to the node H), so that the node H) is at a second signal level of status;

[0060] 步骤07',将像素单元输入端TG-1、TG-2置为低电平,传输管M2-1、M2_2关断;将像素输入端RX置为低电平,复位开关管Ml关断;将行选输入端RS置为高电平,行选开关管M4开启;此时,节点H)通过源跟随器M3向外输出电压信号,对像素单元进行第四次采样C4,从而得到第二个信号电平采样结果;然后,由于已经得到传输管M2-UM2-2开启时所的对应的信号电平的采样,则执行步骤10; [0060] Step 07 ', the input unit pixel TG-1, TG-2 to a low level, transfer tubes M2-1, M2_2 off; RX input pixel is set to the low level, the reset switch Ml off; the row select input RS is high is set open, the row select switch M4; In this case, node H) outwardly through the output voltage signal of the source follower M3, a fourth unit pixel samples C4, whereby obtain a second signal level sampling result; then, since the transfer tubes have been sampled signal level corresponding to the opening time of the M2-UM2-2, execute step 10;

[0061] 步骤10:将所有的像素单元输入端TG置为高电平,所有的传输管M2开启;将像素输入端RX置为高电平,复位开关管Ml开启;将行选输入端RS置为低电平,行选开关管M4关断;此时,整个像素单元结构的输出端处于高阻态,所有的量子点光敏电阻和信号存储电容复位MOS管均被复位,节点FD被复位。 [0061] Step 10: all input pixel cells set to high TG, all of the transfer transistor M2 is turned on; RX input pixel is set to the high level, the reset switch Ml is turned on; the row select input RS is set low, the row select switch transistor M4 is turned off; at this time, the output of the entire pixel unit structure in the high resistance state, all of the quantum dots and the photosensitive resistance MOS transistor to reset the signal storage capacitor are reset, node FD is reset .

[0062]具体的,将像素单元输入端TG-UTG-2置为高电平,传输管M2-1和M2-1开启;将像素输入端RX置为高电平,复位开关管Ml开启;将行选输入端RS置为低电平,行选开关管M4关断;此时,整个像素单元结构的输出端处于高阻态,所有的量子点光敏电阻1-1、1-2和信号存储电容复位MOS管2-1、2-2均被复位,节点FD被复位。 [0062] Specifically, the input pixel unit TG-UTG-2 set to open at a high level, M2-1 and M2-1 transfer tubes; RX input pixel is set to the high level, the reset switch Ml is turned on; the row select input RS is set to a low level, the row select switch transistor M4 is turned off; at this time, the output of the entire pixel unit structure in the high resistance state, all of the quantum dot signals 1-1, 1-2 and photoresistor storage capacitor reset MOS transistor 2-1, 2-2 are reset, node FD is reset.

[0063]虽然本发明已以较佳实施例揭示如上,然实施例仅为了便于说明而举例而已,并非用以限定本发明,本领域的技术人员在不脱离本发明精神和范围的前提下可作若干的更动与润饰,本发明所主张的保护范围应以权利要求书为准。 [0063] While the example embodiment of the present invention has been disclosed in the preferred embodiment as described above, then the embodiment just for illustrative purposes only, the premise can not intended to limit the invention, those skilled in the art without departing from the spirit and scope of the invention made several alterations and modifications, the scope of the present invention as claimed in the claims should prevail.

Claims (7)

1.一种像素单元结构,其特征在于,至少包括:多个量子点光敏电阻、多个信号存储电容复位MOS管和一个信号读取电路单元;所述信号读取电路单元包括:复位开关管(Ml)、多个传输管(M2)、源跟随器(M3)、行选开关管(M4)和多个像素单元输入端;其中, 多个量子点光敏电阻与多个信号存储电容复位MOS管之间一一对应连接,一个量子点光敏电阻对应连接一个信号存储电容复位MOS管作为一个并联单元;每个并联单元中,量子点光敏电阻的一端接参考电平(Vqd),另一端与对应的另一端与复位开关管(Ml)的源极相连,且所述信号存储电容复位MOS管的源极、漏极与参考电平(Vqd)相连,所述信号存储电容复位MOS管的栅极与传输管(M2)的漏极相连,所述信号存储电容复位MOS管的体电容接地; 复位开关管(Ml)的栅极接像素输入端(RX),复位开关管(Ml)的源极接每个传输管(M2)的源极至 1. A pixel cell structure, characterized in that, at least comprising: a plurality of quantum dots photoresistor, a plurality of signal storage capacitors MOS transistor and a reset signal reading circuit unit; said signal reading circuit unit comprises: a reset switch (of Ml), a plurality of transfer tubes (M2), a source follower (M3), line select switch (M4) and a plurality of input units of pixels; wherein the plurality of quantum dots with a plurality of signal photoresistor reset MOS storage capacitor one correspondence between the connecting pipe, a quantum dot photoresistor a signal storage capacitor connected to the corresponding reset MOS transistor connected in parallel as a unit; each of the parallel unit, one end of the reference level of the quantum dot light-sensitive resistor (VQD), the other end the other end of the source of the reset switch (of Ml) is connected to a corresponding electrode, and the source signal storage capacitance reset MOS transistor, a drain and a reference level (VQD) connected to said gate signal storage capacitance reset MOS transistor transfer tube and a drain electrode (M2) is connected to the signal storage capacitor body capacitance to ground of the reset MOS transistor; a source connected to the gate of the pixel input (RX) reset switch (of Ml), the reset switch (of Ml) of each electrode connected to transfer tube (M2) of the source to 节点(FD),复位开关管(Ml)的漏极接复位电压(Vreset);每个传输管(M2)的漏极对应连接一个量子点光敏电阻的一端以及对应连接一个信号存储电容复位MOS管的栅极,每个传输管(M2)的栅极与对应的一个像素单元输入端(TG)相连;源跟随器(M3)的漏极接电源(VDD),源跟随器(M3)的源极接行选开关管(M4)的漏极,源跟随器(M3)的栅极与节点(FD)相连;行选开关管(M4)的栅极与行选输入端(RS)相连,行选开关管(M4)的源极作为整个像素单元结构的输出端; 其中,曝光时,信号读取电路单元在曝光时间内将量子点光敏电阻流出的电流进行积分得到光生电压,当入射到量子点光敏电阻上的光线的强弱发生改变时导致量子点光敏电阻的阻值发生改变,从而改变流经量子点光敏电阻的电流,并且最终导致光生电压的数值发生改变。 Node (FD), a reset switch (of Ml) is connected to the drain of the reset voltage (Vreset is); end corresponding to the drain of each transfer tube (M2) is connected to a quantum dot light-sensitive resistor and the corresponding signal storage capacitor connected to a reset MOS transistor gate, a gate of the corresponding input pixel unit (TG) of each transfer tube (M2) is connected; source and drain of the source follower (M3) is connected to the power supply (the VDD), a source follower (M3) of a drain electrode connected to the row select switch (M4), the source follower (M3) and a gate node (FD) is connected; line select switch (M4) and the gate of the row select input (RS) connected to the line source Routing switch (M4) of the electrode as an output terminal of the whole cell configuration of a pixel; current wherein the time of exposure, signal reading circuit unit within the exposure time quantum dot photoresistor flowing from integrating photovoltage, when incident on the quantum quantum dots results in the resistance of the photoresistor changes when the light intensity at the point of the photoresistor changes, thereby changing the current flowing through the quantum dot photoresistor, and eventually photovoltage value is changed.
2.根据权利要求1所述的像素单元结构,其特征在于,量子点光敏电阻的数量、信号存储电容复位MOS管的数量、传输管(M2)的数量相同。 2. The pixel cell structure according to claim 1, characterized in that the number of quantum dot photoresistor, the number of signal storage capacitor the reset MOS transistor, the same number of transfer tubes (M2) is.
3.根据权利要求1所述的像素单元结构,其特征在于,所述量子点光敏电阻包括可见光敏感量子点和红外光敏感量子点。 3. The pixel cell structure according to claim 1, wherein the quantum dot comprises a photoresistor sensitive to visible light and infrared light sensitive quantum dots quantum dots.
4.一种图像传感器,其特征在于,采用权利要求1-3任一项所述的像素单元结构。 An image sensor, wherein the pixel unit structure according to any one of claims 1-3 employed.
5.—种采用权利要求1所述的像素单元结构所进行的信号采集方法,包括以下步骤: 步骤01:将像素输入端(RX)和多个像素单元输入端(TG)置为高电平,复位开关管(Ml)和多个传输管(M2)开启;将行选输入端(RS)置为低电平,行选开关管(M4)关断,此时,信号存储电容复位MOS管和量子点光敏电阻复位; 步骤02:将其中一个像素单元输入端(TG)置为高电平,其它像素单元输入端(TG)置为低电平,将其它像素单元输入端(TG)对应的传输管(M2)关断;将像素输入端(RX)置为高电平,复位开关管(Ml)和所述其中一个像素单元输入端(TG)对应的传输管(M2)开启,其它像素单元输入端(TG)对应的其它传输管(M2)关断;再将行选输入端(RS)置为低电平,行选开关管(M4)关断,此时,对所开启的传输管(M2)对应连接的量子点光敏电阻和信号存储电容复位MOS管开始曝光,并且开始对量子点光敏电阻流出的 Signal acquisition method of the pixel cell structure according to claim 1 5.- performed using species, comprising the following steps: Step 01: the input pixel (RX) input terminals and a plurality of pixel cells (TG) is set to high , the reset switch (of Ml) and a plurality of transfer tubes (M2) is turned on; the row select input (RS) is set to a low level, the row select switch (M4) is turned off, this time, the signal storage capacitor reset MOS transistor and a quantum dot light-sensitive resistance reset; step 02: a pixel unit in which the input terminal (TG) is set to a high level, the other input terminal of the pixel unit (TG) is set to a low level, the other input terminal of the pixel unit (TG) corresponding to the transfer tube (M2) is turned off; the pixels of the input terminal (RX) is set to a high level, the reset switch (of Ml) and wherein said input means a pixel (TG) corresponding to the transfer tube (M2) is turned on, other pixel input means (TG) corresponding to the other transmission pipe (M2) is turned off; then selected from the line input (RS) is set to a low level, the row select switch (M4) is turned off, this time, the opening of the transfer tube (M2) corresponding to the quantum dots and the photoresistor signal storage capacitor connected to the MOS transistor to reset the start of exposure, and starts flowing out of the quantum dot photoresistor 流进行积分;然后,若对所有的量子点光敏电阻和信号存储电容复位MOS管都开始曝光,并且都开始对所对应的量子点光敏电阻流出的电流进行积分执行步骤04;若没有,则执行步骤03; 步骤03:将所有的像素单元输入端(TG)置为低电平,步骤02中所开启的传输管(M2)关断;重复步骤02,直至对所有的量子点光敏电阻和信号存储电容复位MOS管都开始曝光,并且都开始对所对应的量子点光敏电阻流出的电流进行积分; 步骤04:将像素输入端(RX)、所有的像素单元输入端(TG)置为低电平,复位开关管(Ml)和所有的传输管(M2)关断;再将像素输入端(RX)置为低电平,复位开关管(Ml)关断;此时,节点(FD)处于第一复位电平; 步骤05:将所有的像素单元输入端(TG)置为低电平,所有的传输管(M2)关断;将像素输入端(RX)置为低电平,复位开关管(Ml)关断;将行选输入端(RS)置为高电平,行选开 Stream integration; Then, if the photosensitive resistance and the signal storage capacitor the reset MOS transistor are starting the exposure of all the quantum dots, and are beginning current corresponding to the quantum dots photoresistor flows out step integrator 04; if not, execute step 03; step 03: all the input pixel unit (TG) is set to transfer tubes (M2) is turned off in a low level, the open step 02; step 02 is repeated until all of the signals and quantum dots photoresistor the storage capacitor the reset MOS transistor are exposure is started, and are started the current quantum dot photoresistor effluent corresponding to the integrating; step 04: the pixels of the input terminal (the RX), all of the pixel cell input terminal (TG) is set to low level, the reset switch (of Ml) and all of the transfer tube (M2) is turned off; and then a pixel input terminal (RX) is set to a low level, the reset switch (of Ml) off; in this case, the node (FD) is the first reset level; step 05: all the input pixel unit (TG) is set to low, all of the transfer tube (M2) is turned off; the pixels of the input terminal (RX) is set to a low level, the reset switch tube (of Ml) off; the row select input (RS) is set to a high level, the row select open 管(M4)开启;此时,节点(FD)通过源跟随器(M3)向外输出电压信号,对像素单元进行第一次采样,从而得到第一个复位电平采样结果; 步骤06:将其中一个像素单元输入端(TG)置为高电平,该其中一个像素单元输入端(TG)对应的传输管(M2)开启;将像素输入端(RX)和其它的传输管(M2)置为低电平,复位开关管(Ml)和其它的传输管(M2)关断;此时,积分时间结束,在该积分时间内,量子点光敏电阻的光生电流通过积分获得了光生电压,并且通过所开启的传输管(M2)传递给了节点(FD),从而使得节点(FD)处于第一个信号电平状态; 步骤07:将所有的像素单元输入端(TG)置为低电平,所有的传输管(M2)关断;将像素输入端(RX)置为低电平,复位开关管(Ml)关断;将行选输入端(RS)置为高电平,行选开关管(M4)开启;此时,节点(FD)通过源跟随器(M3)向外输出电压信号,对像素单元进行第二次 Tube (M4) is turned on; In this case, the node (FD) outwardly through the output voltage signal of the source follower (M3), the first unit pixel sample, whereby the first reset level sampling result; Step 06: The wherein a pixel input unit (TG) is set to a high level, a pixel unit in which the input terminal (TG) corresponding to the transfer tube (M2) is turned on; the pixel input (RX) and the other transfer tube (M2) is set is low, the reset switch (of Ml) and other transfer tube (M2) is turned off; at this time, the end of the integration time, within the integration time, the photocurrent quantum dot photoresistor is obtained by integrating the photogenerated voltage, and pass through the transport tube open (M2) to the node (FD), so that the node (FD) is in the first state of a signal level; step 07: all the input pixel unit (TG) is set to low All transfer tube (M2) is turned off; the pixels of the input terminal (RX) is set to a low level, the reset switch (of Ml) off; the row select input (RS) is set to a high level, the row select switch tube (M4) is turned on; In this case, the node (FD) outwardly through the output voltage signal of the source follower (M3), a second pixel unit 样,从而得到第一个信号电平采样结果;若得到所有的传输管(M2)开启时所的对应的信号电平的采样,则执行步骤10;若没有,则执行步骤08; 步骤08:将所有的像素单元输入端(TG)置为低电平,步骤02中所述的其它传输管(M2)关断;将步骤02中所述的其中一个像素单元输入端(TG)置为高电平,复位开关管(Ml)开启,所有传输管(M2)关断;将行选输入端(RS)置为低电平,行选开关管(M4)关断,此时,节点(FD)被重新置位; 步骤09:重复步骤04至步骤07,直至得到所有的传输管(M2)开启时所的对应的信号电平的采样; 步骤10:将所有的像素单元输入端(TG)置为高电平,所有的传输管(M2)开启;将像素输入端(RX)置为高电平,复位开关管(Ml)开启;将行选输入端(RS)置为低电平,行选开关管(M4)关断;此时,整个像素单元结构的输出端处于高阻态,所有的量子点光敏电阻和信号存储电容复位 Like, to obtain a signal level of the first sampling result; signal level corresponding to the samples, the step 10 is executed if all of the obtained transfer tube (M2) is turned on; if not, execute step 08; step 08: all input pixel unit (TG) is set to other transmission pipe (M2) is turned off in a low level, according to step 02; step in which a pixel of the input unit 02 (TG) is set to a high level, the reset switch (of Ml) is turned on, all transfer tube (M2) is turned off; the row select input (RS) is set to a low level, the row select switch (M4) is turned off, this time, the node (FD ) is re-set; step 09: repeat step 04 to step 07, until a signal level corresponding to all of the transfer tube (M2) is turned on by the sampling; step 10: all of the pixel unit input terminal (TG) set high, all of the transfer tube (M2) is turned on; the pixel input (RX) is set to a high level, the reset switch (of Ml) is turned on; the row select input (RS) is set to low, row select switch (M4) is turned off; at this time, the output of the entire pixel unit structure in the high resistance state, all of the quantum dots and the photoresistor reset signal storage capacitor MOS管均被复位,节点(FD)被复位。 Are reset MOS transistor, the node (FD) is reset.
6.根据权利要求5所述的信号采集方法,其特征在于,所采用的所述像素单元输入端(TG)的数量、传输管(M2)的数量、量子点光敏电阻的数量、信号存储电容复位MOS管的数量相同。 The signal acquisition method according to claim 5, wherein the number of input pixel unit (TG) employed, the number of transfer tubes (M2), the quantum dot light-sensitive resistor, the signal storage capacitor the same number of the reset MOS transistor.
7.根据权利要求5所述的信号采集方法,其特征在于,所采用的所述量子点光敏电阻包括可见光敏感量子点和红外光敏感量子点。 7. The signal acquisition method according to claim 5, wherein the quantum dot comprises a photoresistor sensitive to visible light used in the quantum dot and the quantum dots sensitive to infrared light.
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CN102709297A (en) * 2011-03-04 2012-10-03 手持产品公司 Imaging and decoding device with quantum dot imager
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