CN106655767A - Reverse boosted circuit based on reverse DC/DC controller - Google Patents
Reverse boosted circuit based on reverse DC/DC controller Download PDFInfo
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- CN106655767A CN106655767A CN201611198730.2A CN201611198730A CN106655767A CN 106655767 A CN106655767 A CN 106655767A CN 201611198730 A CN201611198730 A CN 201611198730A CN 106655767 A CN106655767 A CN 106655767A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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Abstract
The invention discloses a reverse boosted circuit based on a reverse DC/DC controller. The reverse DC/DC controller adopts a DC/DC voltage conversion control chip with the model of LTC3863, and the reverse boosted circuit comprises an LTC6900 low-power low-frequency oscillator, a P-channel MOSFET tube and a Schottky diode. The reverse boosted circuit is applied to portable tacan equipment, and -80V high-voltage power supply is provided for an antenna low-frequency modulation unit in the equipment, so that the circuit is simple in structure, stable in operation and convenient to maintain.
Description
Technical field
The present invention relates to navigation type product power supply, the power subsystem of more particularly to portable tacan set, and in particular to
Plant based on the reverse booster circuit of reverse DC/DC controllers.
Background technology
In the application of various Power Electronic Technique, it is required to various power supplys and provides power for equipment.In the research and development of power supply
And in production, certain type product needs -80V power voltage supplies, this is accomplished by providing the solution for producing -80V voltages.Conventional
Reversely booster circuit produces vibration, controlling switch device using 555 chips（Triode）Conducting and cut-off, rear class uses transformation
Device builds negative polarity full-wave rectification circuit, and its complex structure, volume is bigger than normal, less efficient, and output voltage precision is relatively low, and ripple is inclined
Greatly, the booster power is caused to face update.Therefore, the problems referred to above become this area power supply research staff to be studied and
The problem of solution.
The content of the invention
The invention aims to the output voltage precision for overcoming prior art to exist is low, less efficient, ripple is bigger than normal,
The problems such as maintenance difficult, especially provide a kind of reverse booster circuit based on reverse DC/DC controllers.By using maturation
DC/DC voltage conversion control chips, realize voltage conversion function, design advanced technology, working stability, high precision, efficiency high,
The little reverse booster circuit of ripple, meets the use demand of portable tacan set.
The present invention is adopted the technical scheme that for achieving the above object：It is a kind of based on the reverse of reverse DC/DC controllers
Booster circuit, it is characterised in that：Described reverse DC/DC controllers adopt the DC/DC voltage conversion controls of model LTC3863
Coremaking piece N2, described reverse booster circuit include LTC6900 small-power low-frequency oscillator N1, P-channel MOSFET pipes M1 and Xiao
3 pin of special based diode D1, small-power low-frequency oscillator N1 are after resistance R2 is connected with 1 pin of small-power low-frequency oscillator N1
+ 5V power supplys are connect, the 2 pin ground connection of small-power low-frequency oscillator N1,5 pin of small-power low-frequency oscillator N1 are connected to control chip N2
1 pin, 2 pin of control chip N2,4 pin, 6 pin connect respectively one end of resistance R5, one end of electric capacity C6, one end of resistance R6,
The other end of resistance R6 is grounded after electric capacity C1 is connected with the other end of resistance R5 and electric capacity C6, and 3 pin of control chip N2 connect
Ground；One end of 11 pin and electric capacity C8 and electric capacity C7 that 9 pin of control chip N2 connect control chip N2 by electric capacity C2 is followed by
It is grounded after the other end connection of input voltage vin end, electric capacity C8 and electric capacity C7；12 pin of control chip N2 meet P-channel MOSFET
The grid of pipe M1,11 pin of control chip N2 be connected with 10 pin of control chip N2 by resistance R1 be followed by P-channel MOSFET pipe
The drain electrode of M1, the source electrode of P-channel MOSFET pipe M1 is grounded after being connected with the negative pole of Schottky diode D1 by inductance L1；Control
5 pin and 7 pin of chip N2 connect respectively the two ends of electric capacity C5, the two ends of resistance R4 are connected then and respectively, while control chip
7 pin of N2 are further through resistance R3 and the positive pole and electric capacity C3, electric capacity C11, electric capacity C4, electric capacity C9 and electric capacity of sustained diode 1
One end connection of C10, as output voltage Vout ends after connection, electric capacity C3, electric capacity C11, electric capacity C4, electric capacity C9 and electric capacity C10
The other end connection after be grounded.
The invention has the advantages that：The design is applied to into portable tacan set, is the antenna in equipment
Low frequency modulations unit provides the high voltage supply of -80V, and circuit structure is simple, working stability, is easy to safeguard.
Description of the drawings
Fig. 1 is the -80V/80mA output circuit schematic diagrams of the present invention；
Fig. 2 is the -80V/80mA Output simulation result curve figures of the present invention；
Fig. 3 be resistance R1=33.2m Ω, the constant simulation result curve map of remaining device；
Fig. 4 be resistance R1=16.2m Ω, the constant simulation result curve map of remaining device；
Fig. 5 be electric capacity C6=0.01 μ F, the constant simulation result curve map of remaining device；
Fig. 6 be electric capacity C6=1 μ F, the constant simulation result curve map of remaining device；
Fig. 7 be inductance L1=10 μ H, the constant simulation result curve map of remaining device；
Fig. 8 be inductance L1=47 μ H, the constant simulation result curve map of remaining device；
Fig. 9 be electric capacity C3=10 μ F, electric capacity C11=10 μ F, the constant simulation result curve map of remaining device；
Figure 10 be electric capacity C3=47 μ F, electric capacity C11=47 μ F, the constant simulation result curve map of remaining device.
Specific embodiment
Understand the present invention in order to clearer, be described in detail below in conjunction with drawings and Examples：
With reference to Fig. 1, reverse DC/DC controllers using model LTC3863 DC/DC voltage conversion control chip N2, described
Reversely booster circuit includes LTC6900 small-power low-frequency oscillator N1, P-channel MOSFET pipes M1 and Schottky diode D1；It is little
3 pin of power low-frequency oscillator N1 are connected with 1 pin of small-power low-frequency oscillator N1 by resistance R2 and are followed by+5V power supplys, little work(
The 2 pin ground connection of rate low-frequency oscillator N1,5 pin of small-power low-frequency oscillator N1 are connected to 1 pin of control chip N2, control chip
2 pin of N2,4 pin, 6 pin connect respectively one end of resistance R5, one end of electric capacity C6, one end of resistance R6, the other end of resistance R6
It is grounded after electric capacity C1 is connected with the other end of resistance R5 and electric capacity C6, the 3 pin ground connection of control chip N2；Control chip N2's
One end of 11 pin and electric capacity C8 and electric capacity C7 that 9 pin connect control chip N2 by electric capacity C2 is followed by input voltage vin end, electricity
It is grounded after the other end connection for holding C8 and electric capacity C7；12 pin of control chip N2 connect the grid of P-channel MOSFET pipe M1, control core
11 pin of piece N2 are connected the drain electrode for being followed by P-channel MOSFET pipe M1, P-channel with 10 pin of control chip N2 by resistance R1
The source electrode of MOSFET pipe M1 is grounded after being connected with the negative pole of Schottky diode D1 by inductance L1；5 pin of control chip N2 and 7
Pin connects respectively the two ends of electric capacity C5, the two ends of resistance R4 is connected then and respectively, while 7 pin of control chip N2 are further through electricity
The positive pole and electric capacity C3 of resistance R3 and sustained diode 1, electric capacity C11, electric capacity C4, one end of electric capacity C9 and electric capacity C10 are connected,
As output voltage Vout ends after connection, after the other end connection of electric capacity C3, electric capacity C11, electric capacity C4, electric capacity C9 and electric capacity C10
Ground connection.
The design is mainly by the DC/DC voltage conversion control chips based on LTC3863（Hereinafter referred to as " LTC3863 cores
Piece "）, LTC6900 small-power low-frequency oscillators, P-channel MOSFET pipes, Schottky diode and filter circuit constitute.LTC3863
It is a reverse buck DC/DC convertor controls chip of LINEAR companies release, is widely used in industrial automation power supply,
The fields such as communication power supply, distributed power supply system.
The design operation principle：440KHz square waves are produced by LTC6900 small-powers low-frequency oscillator, is LTC3863 chips
Stable operating frequency is provided.12 pin of Jing LTC3863 chips, control the conducting and cut-off, rear class application of P-channel MOSFET pipes
Booster circuit realizes the basic function of the power supply.Output voltage is configured by arranging feedback divider resistance R3, R4, so as to realize
Meet the reverse booster power of following technical indicator：
Input voltage range（VIN）：12V～18V；
Output voltage（VOUT）：-80V；
Maximum output current（IOUT（MAX））：80mA；
Switching frequency：440kHz.
Its 13 external pins are introduced below by LTC3863 chips totally 13 pins：
PLLIN/MODE（PIN1）：External reference clock is input into and pulse mode enables/disable pin.When there is external clock application
To the pin, internal phaselocked loop is synchronous with external clock rising edge by the edge for making connection gate drive signal.When without outside
Clock is applied to the pin, and this input is in light load period termination work.This pin is hanging, selects low IQ（40μA）Pulse mode work
Make.This pin ground connection, selects no pulse mode work.
FREQ（PIN2）：Switching frequency arranges input pin.Switching frequency is by between FREQ pins and SGND pins
The non-essential resistance of connection is configured.LTC3863 chip internals have the current source of a 20 μ A, by the non-essential resistance for connecting
Produce a voltage and internal oscillator frequency is set.Can be by following two situation applications, the pin can be driven directly and pass through
One DC voltage arranges oscillator frequency.The pin ground connection selects the fixed operating frequency of 350KHz, the pin vacantly to select
535KHz fixes operating frequency.
SGND（PIN3）：Reference ground is provided for analog element small-signal.
SS（PIN4）：Soft start.This pin of LTC3863 chips and an indirect electric capacity on ground, arrange oblique wave climbing speed,
Typical time period is to the regulation level that SS pins reach：
………………………………（Formula 1）
VFB（PIN5）：Error amplifier inverting input, connects a resitstance voltage divider and so far holds to arrange output electricity from output voltage
Pressure value.The pin inner portions reference voltage level is 0.8V.
ITH（PIN6）：Current control thresholding and controller compensation pin.This pin is the output end of error amplifier and opens
Close the compensation pin for adjusting.Voltage range is between 0V to 2.9V.
VFBN（PIN7）：The feedback input pin of anti-phase PWM controller.In output end to VFBBetween resitstance voltage divider
Center is connected to VFBNPin.VFBNTheoretical voltage value is 0V.
RUN（PIN8）：Numeral starts control input pin.Start voltage more than 1.26V normal works, when voltage is less than
1.26V shut-off controller.One μ A current source of inside 0.4 is pulled upward to the pin.This pin can connect one and be up to the outer of 60V
Portion's power supply.
CAP（PIN9）：Raster data model（-）Supply pin.One at least low ESR of 0.1 μ F（Equivalent series resistance）Pottery
Porcelain shunt capacitance, is parallel to Vin pins to this pin, and for internal regulator shunt capacitance is provided.
SENSE（PIN10）：Current detecting input pin.In VinOne high current limit is set between pin and SENSE pins
System.Peak induction current limit is in 95mV/RSENSE。
Vin（PIN11）：Chip power input pin.Should connect the bypass of a μ F of minimum 0.1 between on earth in this pin
Electric capacity.It is more excellent in order to reach performance, near VinThe position of pin uses a low ESR（Equivalent series resistance）Ceramic condenser.
GATE（PIN12）：Outside P-channel MOSFET raster data model output pins.When input voltage is higher than 8V, grid drives
Dynamic bias（Vin-VCAP）It is adjusted to 8V.When（Vin-VCAP）During less than 3.5V, raster data model failure.
PGND（PIN13）：The reference ground of power supply.This pin individually must be electrically connected on circuit boards, only be existed
It is a little upper using PCB holding wires connection power supply ground and signal ground.
Reverse booster circuit detailed design based on LTC3863 control chips is as follows：
1. output voltage design
Output voltage is configured by divider resistance R3, R4 is fed back, and 5 pin of LTC3863 control chips are reference voltage 0.8V, the electricity
Road requires -80V voltage outputs, and the ratio that can calculate resistance R3 and R4 is 100, now designs R3=499k Ω, R4=4.99k Ω,
Output voltage can be met for -80V.
2. switching frequency and synchronised clock
Table 1 lists FREQ pins and PLLIN/MODE pins operating frequency situation in varied situations.
Table 1
The design resistance R5 is 64.9k Ω, and PLLIN/MODE pins connect external clock, and external clock selects LTC6900 small-powers
Low-frequency oscillator is produced.
3. inductance selection
The circuit considers to be 18V to the maximum in input voltage, and output in the case of 0.08A, calculates inductance L1 at full capacitymaxFor
191 μ H, generally select inductance L1 between 10 ~ 68 μ H, the design selects inductance L1=22 μ H.
Calculate under minimum input voltage 12V, the ripple current of generation is Δ IL=1.08A。
Continuous/non-continuous mode border output current is calculated, I is drawnOUT（CDB）=0.184A。
Calculate maximum inductance peak point current to occur in the case of minimum input voltage and full load, to draw
IL（PEAK_MAX）=1.16A。
4. the resistance of resistance R1 is set
The resistance of resistance R1 is set, it is considered to design 50% surplus, resistance R1=54.6 m Ω can be calculated, the design selects resistance
R1=49.9mΩ。
In the case of resistance R1=49.9m Ω, calculate peak inductive current and be limited to 1.9A；Select the specified of inductance value
Electric current need to be more than 1.9A.
Output-current limitation calculates I by the peak inductive current limit and minimum input voltageLIMIT（MIN）=
0.177A, therefore maximum output current should be limited in 0.177A, be that the twice of output-current rating 0.08A is more.If necessary to more
High output current is limited, and need to only reduce the resistance of resistance R1.
5. C2 capacitances are designed
The capacitance of electric capacity C2 is by soft-start time tSSDetermine, t is worked as in calculatingssDuring=8ms, electric capacity C2 chooses the capacitance of 0.1 μ F.
The selection of 6.P channel mosfet pipes
P-channel MOSFET pipe models IRF9640 that the design chooses, the V of IRF9640DS=-200V, RDS（ON）=0.5Ω（VGS
During=- 10V）, possess the function of high-speed switch, the design requirement can be met.
7. Schottky diode is selected
The reverse pressure voltage of diode should be greater than（18V+80V）, Schottky diode model MURS120 that the design chooses,
It reverse pressure for 200V, forward conduction electric current is maximum to reach 2A, meets the design requirement.
As shown in Fig. 2 according to the circuit of Fig. 1 by software emulation, the simulation result for drawing it can be seen that output voltage by
0V is gradually reduced, and in about 33ms, output voltage reaches -80V, establishes stable state.
As shown in Figure 3, Figure 4：The respectively simulation result of R1=33.2m Ω and R1=16.2m Ω.It is appropriate to reduce resistance R1's
Value can improve output current restriction, but by the analysis to Fig. 2, Fig. 3, Fig. 4, it can be found that the value of resistance R1 is less, set up
The time of stable state is shorter, i.e., output voltage is faster from the speed that 0V drops to -80V.As seen from the figure, as resistance R1=49.9m
During Ω, the time for setting up stable state is 33ms；As resistance R1=33.2m Ω, the time for setting up stable state is 12ms；When
During resistance R1=16.2m Ω, set up stable state time be 8ms, but set up stable state it is initial when ripple peak-to-peak value can be more
Greatly.According to actually used situation, we need not simultaneously be rapidly reached stable state, generally can receive in a few tens of milliseconds, but
But less Ripple Noise is required.Therefore, the design selects the design of R1=49.9m Ω, or even more bigger is suitable, and subtracts
The value of small resistor R1 is unadvisable.
As shown in Figure 5, Figure 6：The simulation result of respectively electric capacity C6=0.01 μ F and electric capacity C6=1 μ F.By Fig. 2's and Fig. 5
Simulation result can be seen that difference is not obvious in electric capacity C6=0.1 μ F or C6=0.01 μ F, and electric capacity C6=0.01 μ F in Fig. 5
When, fluctuation is occurred in that during stable state is set up（At 5ms）, foundation when being not as electric capacity C6=0.1 μ F in Fig. 2 is steady
Determine waveform during state, smooth very much.Can be seen that simulation time by the simulation result of Fig. 6 is 50ms, but when reaching 50ms
Output voltage has just dropped to -50V, and decline curve is close to linear function, it can be deduced that, when reaching 80ms or so, voltage can be with
The stable state of -80V is reached, but it is considered that the starting time of 80ms is longer.It is 0.1 μ F that the design selects electric capacity C6, or
The capacitance for selecting closely 0.1 μ F is suitable.
As shown in Figure 7, Figure 8：The simulation result of respectively inductance L1=10 μ H and inductance L1=47 μ H, is tied by the emulation of Fig. 7
Fruit is as can be seen that after the appropriate inductance value for reducing inductance L1, reach the time lengthening of stable state, about 50ms.While inductance
The Ripple Noise of L1=10 μ H is less than normal.Can be seen that after the inductance value of appropriate increase inductance L1 by the simulation result of Fig. 8, reach
The time of stable state shortens, and about 15ms is not produced to other states and significantly affected.The above analysis is obtained：It is appropriate to increase
Inductance value that is big or reducing inductance L, has substantially no effect on stable -80V direct voltage outputs, and other inductance values can be selected to expire
Sufficient design requirement.After changing inductance value, such as starting time and Ripple Noise index are impacted, can be by other yuan of auxiliary tone
Device is come the state that is optimal design.The inductance L1=22 μ H that the design chooses are relatively suitable.
Shown in Fig. 9, Figure 10：Respectively electric capacity C3=10 μ F, electric capacity C11=10 μ F and electric capacity C3=47 μ F, electric capacity C11=47 μ F
When simulation result.Electric capacity C3 and electric capacity C11 is output electrolytic capacitor filter.The design adopts electric capacity C3=22 μ F, electric capacity C11=
22 μ F electrochemical capacitors are in parallel.Can be seen that when it is 10 μ F to export electrolytic capacitor filter by the simulation result of Fig. 9, set up stable
The time of state is about 17ms, and output ripple is less, and overall output result change is little.Can be seen by the simulation result of Figure 10
Go out, when it is 47 μ F to export electrolytic capacitor filter, little erratic fluctuations is produced during stable state is set up, while opening
The dynamic time reaches nearly 80ms.Extensive diagnostic is proceeded to the circuit, we can draw the following conclusions：It is appropriate to reduce output
The capacitance of filter capacitor sets up stable state to circuit without considerable influence, but exports the less filter effect of electrolytic capacitor filter value more
Difference；The appropriate capacitance for increasing output electrolytic capacitor filter, can cause circuit occur during setting up stable state it is unstable because
Element.If continuing to increase output capacitance value, it will have a little so that circuit cannot normally export -80V.I.e. circuit output end has one
The restriction of individual maximum capacitive load.Output end electrolytic capacitor filter is not to be exceeded the restriction that maximum capacitive is loaded during design.
According to the above description, the scheme of the design is capable of achieving with reference to art technology.
Claims (1)
1. a kind of reverse booster circuit based on reverse DC/DC controllers, it is characterised in that：Described reverse DC/DC controllers
The little work(of LTC6900 is included using the DC/DC voltage conversion control chip N2 of model LTC3863, described reverse booster circuit
Rate low-frequency oscillator N1, P-channel MOSFET pipes M1 and Schottky diode D1；3 pin of small-power low-frequency oscillator N1 are by electricity
Resistance R2 is connected with 1 pin of small-power low-frequency oscillator N1 and is followed by+5V power supplys, and 2 pin of small-power low-frequency oscillator N1 are grounded, little work(
5 pin of rate low-frequency oscillator N1 are connected to 1 pin of control chip N2, and 2 pin of control chip N2,4 pin, 6 pin connect respectively resistance
One end of R5, one end of electric capacity C6, one end of resistance R6, the other end of resistance R6 is by electric capacity C1 and resistance R5's and electric capacity C6
It is grounded after other end connection, the 3 pin ground connection of control chip N2；9 pin of control chip N2 connect control chip N2 by electric capacity C2
11 pin and electric capacity C8 and electric capacity C7 one end be followed by the other end at input voltage vin end, electric capacity C8 and electric capacity C7 connection after
Ground connection；12 pin of control chip N2 connect the grid of P-channel MOSFET pipe M1, and 11 pin of control chip N2 are by resistance R1 and control
The 10 pin connection of chip N2 is followed by the drain electrode of P-channel MOSFET pipe M1, the source electrode and Schottky diode of P-channel MOSFET pipe M1
It is grounded by inductance L1 after the negative pole connection of D1；5 pin and 7 pin of control chip N2 connect respectively the two ends of electric capacity C5, Ran Houyou
Connect the two ends of resistance R4 respectively, at the same 7 pin of control chip N2 further through resistance R3 and sustained diode 1 positive pole and
One end connection of electric capacity C3, electric capacity C11, electric capacity C4, electric capacity C9 and electric capacity C10, as output voltage Vout ends, electric capacity after connection
It is grounded after the other end connection of C3, electric capacity C11, electric capacity C4, electric capacity C9 and electric capacity C10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611198730.2A CN106655767A (en) | 2016-12-22 | 2016-12-22 | Reverse boosted circuit based on reverse DC/DC controller |
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| CN201611198730.2A CN106655767A (en) | 2016-12-22 | 2016-12-22 | Reverse boosted circuit based on reverse DC/DC controller |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108390557A (en) * | 2018-02-28 | 2018-08-10 | 深圳市恒浩伟业科技有限公司 | Improve the Switching Power Supply of underloading frequency |
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