CN106653594A - Method for improving etching effect of side wall in aspect ratio silicon etching - Google Patents

Method for improving etching effect of side wall in aspect ratio silicon etching Download PDF

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Publication number
CN106653594A
CN106653594A CN201510721444.9A CN201510721444A CN106653594A CN 106653594 A CN106653594 A CN 106653594A CN 201510721444 A CN201510721444 A CN 201510721444A CN 106653594 A CN106653594 A CN 106653594A
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Prior art keywords
etching
bias power
silicon
polymer
passivation
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CN201510721444.9A
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CN106653594B (en
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周虎
王红超
严利均
刘身健
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Advanced Micro Fabrication Equipment Inc Shanghai
Advanced Micro Fabrication Equipment Inc
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Advanced Micro Fabrication Equipment Inc Shanghai
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • H01L21/30655Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Abstract

The invention discloses a method for improving the etching effect of a side wall in aspect ratio silicon etching, and the method comprises the steps: carrying out the passivation of etched silicon twice before etching each time, wherein the first passivation step is carried out under high-pressure conditions, and the second passivation step is carried out under the conditions of low voltage and high bias power; The first passivation step can guarantee that polymer can be quickly distributed on an opened side wall of the etched silicon, and the second passivation step can guarantee that the polymer can be uniformly distributed at an opened bottom of the etched silicon. The method provided by the invention can guarantee that the polymer can be uniformly distributed on the opened side wall of the etched silicon and the opened bottom of the etched silicon through carrying out the passivation twice before etching each time, guarantees that the silicon side wall after etching cannot form a strip-shaped or hole-shaped rough surface, and improves the side wall smoothness of the etched silicon.

Description

A kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching
Technical field
The present invention relates to the method for the silicon crystal anisotropic etching depth in semiconductor equipment manufacture field, and in particular to a kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching.
Background technology
Bosch is etched(Bosch Process)It is widely used in TSV(through silicon via)Manufacture field, mainly due to the high silicon etching rate of Bosch Process, the selectivity of mask, for 3-D integrated circuits, 3-D packaging applications.However, particularly in etching of the high pressure etching technics such as deep hole silicon, the inhomogeneities being passivated from the top to the bottom on the wall of etched hole side.When etching gas and deposition gases are quickly exchanged, because deposition gases have the extremely low time of staying, deposition is higher in channel roof, and with extending downwardly for etching through hole, only less deposition gases can reach bottom.Therefore, in Bosch In Process, can be inconsistent due to passivation layer distribution, it is easy to which ground is formed in channel side wall has like aperture, hole or shape of stripes so that sidewall roughness is uneven.
The content of the invention
It is an object of the invention to provide a kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, by being passivated twice before etching every time to the silicon that is etched, and the first passivation step is to carry out under elevated pressure conditions, the second passivation step is carried out under conditions of the high bias power of low pressure;It is able to ensure that polymer is rapidly distributed on the opening sidewalls of the silicon that is etched by the first passivation step, the open bottom of the silicon that is etched is distributed in by the second passivation step with being able to ensure that polymer uniform.A kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching disclosed by the invention, by being passivated twice in etching money every time, it is able to ensure that polymer uniform is distributed in the opening sidewalls of the silicon that is etched, bottom, so that it is guaranteed that the sidewall silicon after etching is not in the matsurface of striated or hole shape, the side wall smoothness of the silicon after etching is improve.
In order to achieve the above object, the present invention is achieved through the following technical solutions:
A kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, the method includes multiple etching periods for repeating, and each etching period includes:
S1, etch step is performed etching to silicon, is formed in silicon face and is open;
S2, the first passivation step is filled with polymer gas in the opening, and to the opening first time passivation is carried out;
In the first passivation step, while above-mentioned mixed gas in the plasma treatment appts have at second air pressure, the plasma treatment appts apply to carry out first time Passivation Treatment after second substrate bias power so that polymer of the polymer on the opening sidewalls top more than open bottom;
S3, the second passivation step;
In the second passivation step, while above-mentioned mixed gas have three air pressure, the plasma treatment appts apply the 3rd substrate bias power so that the polymer of the opening sidewalls bottom can be more than the polymer of open top;
Wherein, the second air pressure is more than the 3rd air pressure, and the second substrate bias power is less than the 3rd substrate bias power;
S4, repeats step S1-S3, until reaching target call to the etching depth of silicon.
Step S1 is included:
Processing gas will be full of in plasma treatment appts, using the first air pressure, the first substrate bias power, perform etching to form the opening in silicon face using the processing gas.
Duration of the duration in the first passivation step cycle more than the second passivation step cycle.
Diluent gas is used to promote polymer gas in the mixed gas to spread and be evenly distributed in inwall and the bottom of the opening in the mixed gas, and promotes first passivation step, the carrying out of second passivation step.
Polymer gas are carbon fluoride gas in the mixed gas.
3rd substrate bias power is pulsed bias power, and the 3rd substrate bias power can allow for high spike bias power and keep mean power.
The scope that second air pressure is arranged is 90mT-160mT;The scope of second substrate bias power is 0-10W;
The scope that 3rd air pressure is arranged is 60mT-90mT;The scope that 3rd substrate bias power is arranged is 50-200W.
The present invention has compared with prior art advantages below:
A kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching disclosed by the invention, by being passivated twice before etching every time to the silicon that is etched, and the first passivation step is to carry out under elevated pressure conditions, the second passivation step is carried out under conditions of the high bias power of low pressure;It is able to ensure that polymer is rapidly distributed on the opening sidewalls of the silicon that is etched by the first passivation step, the open bottom of the silicon that is etched is distributed in by the second passivation step with being able to ensure that polymer uniform.A kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching disclosed by the invention, by being passivated twice in etching money every time, it is able to ensure that polymer uniform is distributed in the opening sidewalls of the silicon that is etched, bottom, so that it is guaranteed that the sidewall silicon after etching is not in the matsurface of striated or hole shape so that the silicon top after etching is more preferable to the uniformity of bottom.
Description of the drawings
Fig. 1 is a kind of overall flow schematic diagram of the method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching of the present invention.
Fig. 2 is a kind of schematic device of the method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching of the present invention.
Fig. 3 is a kind of embodiment schematic diagram of the method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
A kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching disclosed by the invention adopts inductive type plasma treatment appts as shown in Figure 2.The inductive type plasma treatment appts include including including bottom electrode in a pedestal 120, pedestal in a reaction chamber 100, reaction chamber.Pedestal top includes electrostatic chuck 121, and pending silicon wafer 122 is arranged on electrostatic chuck 121.One has lower frequency(Such as 2Mhz ~ 400Khz)Radio-frequency power supply 40 bottom electrode is connected to by an adaptation 50.The top of reaction chamber 100 includes top board made by an insulating materials, and an inductance coil 70 is arranged on insulating materials top board top to launch.One radio-frequency power supply 60 is connected to inductance coil 70, the other end ground connection of inductance coil 70 by match circuit 80.One is connected by a valve 95 for gas blowout head 90 with reactant gas source equipment 110.Inductance coil 70 can be involute shape or circular concentric, or the combination of various coil shapes of rushton turbine etc..Radio-frequency current flows into inductance coil and flows into earth terminal from the other end from the input of coil 70.
As shown in figure 1, a kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, the method includes multiple etching periods for repeating, and each etching period includes:
S1, etch step is performed etching to silicon, is formed in silicon face and is open.
Processing gas will be full of in plasma treatment appts, using the first air pressure, the first substrate bias power, perform etching to form opening in silicon face using processing gas.
In the present invention, silicon wafer to be etched 122 is arranged on pedestal 120 by electrostatic chuck 121.Processing gas are filled with reaction chamber 100 in by reactant gas source equipment 110, valve 95 and for gas blowout head 90, and the first air pressure of offer, the first bias power are performed etching for the surface of silicon wafer 122 by radio-frequency power supply 40.In this step, an opening is formed after the surface of silicon wafer 122 is etched.
In the present embodiment, the first air pressure is set to 120mT, the first bias power and is set to 80W, etching gas for SF6 mixing rare gas(Such as He gas etc.)Silicon wafer 122 is performed etching.
S2, the first passivation step is filled with polymer gas in opening, and to the opening first time passivation is carried out.
After plasma treatment appts mix polymer gas with diluent gas, mixed gas are filled with opening.In the present invention, the mixed gas that polymer gas and diluent gas are formed are filled with reaction chamber 100 by reactant gas source equipment 110, valve 95 and for gas blowout head 90.
In the present invention, polymer gas are carbon fluoride gas in mixed gas.Diluent gas is used to promote polymer gas in the mixed gas to spread and be evenly distributed in inwall and the bottom of opening in mixed gas, and promotes the first passivation step of step S2, the carrying out of the second passivation step of step S3.
In the first passivation step, plasma treatment appts apply the second air pressure to above-mentioned gas carries out first time Passivation Treatment, it is ensured that polymer uniform is distributed on the side wall in opening.
In the present invention, step S2 is also included:In the first passivation step, while above-mentioned mixed gas in plasma treatment appts have at the second air pressure, the plasma treatment appts apply to carry out first time Passivation Treatment after second substrate bias power so that polymer of the polymer on opening sidewalls top more than open bottom.
In the present invention, the scope of the second air pressure is 90mT-160mT;The scope of the second substrate bias power is 0-10W.Using above-mentioned passivation voltage, the polymer that the side wall of the opening to being formed in step S1 is rapidly covered in mixed gas can be realized, improve passivation efficiency.
S3, the second passivation step.
In the second passivation step, plasma treatment appts apply the 3rd air pressure to above-mentioned mixed gas.In the second passivation step, while above-mentioned mixed gas have three air pressure, plasma treatment appts apply the 3rd substrate bias power so that the polymer of opening sidewalls bottom can be more than the polymer of open top;
Wherein, the second air pressure is more than the 3rd air pressure, and the second substrate bias power is less than the 3rd substrate bias power.
In this step, continue the mixed gas that polymer gas and diluent gas are formed to be filled with reaction chamber 100 by reactant gas source equipment 110, valve 95 and for gas blowout head 90.In the present invention, the scope of the 3rd air pressure is 60mT-90mT;The scope of the 3rd substrate bias power is 50-200W.
In this step, although the 3rd air pressure is less than the second air pressure, so that the opening inwall that mixed gas are distributed in silicon wafer 122 slows, but due under the 3rd air pressure, the collective effect of the 3rd substrate bias power, polymer can be increased moves down efficiency so that more polymer uniforms are distributed in the open bottom of silicon wafer 122.
In the present invention, the 3rd substrate bias power is pulsed bias power, and the 3rd substrate bias power can allow for higher spike bias power and keep mean power.
In the present invention, the duration of the first passivation step T1 is more than the duration of the second passivation step T2.Because the passivation efficiency of the first passivation step T1 is higher than the passivation efficiency of the second passivation step T2, therefore, in order to improve the whole efficiency of passivation, it is desirable to duration of the duration of the first passivation step T1 more than the second passivation step T2.
S4, repeats step S1-S3, until reaching target call to the etching depth of silicon.
Plasma treatment appts are filled with processing gas in opening, and are etched in opening using the first air pressure, the first substrate bias power, by the depth down of opening.
In the present invention, when primary step S2-S3 is completed, illustrate that for the first time passivation is completed, then processing gas can be filled with reaction chamber 100 by reactant gas source equipment 110, valve 95 and for gas blowout head 90 again, the first air pressure, the first bias power are provided by radio-frequency power supply 40, etching, is etched again in the opening of silicon wafer 122.
After the etching of execution step S1 again, the opening depth of silicon wafer 122 becomes big, then need to repeat step S2-S3, the new depth for being formed of opening of silicon wafer 122 is passivated again, it is ensured that the opening sidewalls of silicon wafer 122, bottom can uniform fold polymer.Immediately the etching such as step S1 is carried out again to the opening of silicon wafer 122, till the opening depth of silicon wafer 122 reaches target call.
In one embodiment of the present of invention, in first time passivation step, the second air pressure is 120mT, the second bias power is 10W, and the mixed gas that polymer C4F8 gases and diluent gas He are formed are filled with reaction chamber 110 carries out first time passivation.In second passivation step, the 3rd air pressure is 90mT, the 3rd bias power is 80W, and the mixed gas that polymer C4F8 gases and diluent gas He are formed are filled with reaction chamber 110 carries out second passivation.In etching process, the first air pressure is set to 120mT, the first bias power and is set to 80W to perform etching silicon wafer 122.
As shown in Figure 3, a kind of Jing methods for being used to carry High lateral wall etching effect in depth-width ratio silicon etching disclosed by the invention, knowable in the etching effect of silicon wafer 122, by being passivated twice in etching money every time, it is able to ensure that polymer uniform is distributed in the opening sidewalls of the silicon that is etched, bottom, so that it is guaranteed that the sidewall silicon after etching is not in the matsurface of striated or hole shape so that the silicon top after etching is more preferable to the uniformity of bottom.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read the above, for various modifications and substitutions of the present invention all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (7)

1. a kind of method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterised in that the method includes multiple etching periods for repeating, and each etching period includes:
S1, etch step is performed etching to silicon, is formed in silicon face and is open;
S2, the first passivation step is filled with polymer gas in the opening, and to the opening first time passivation is carried out;
In the first passivation step, while above-mentioned mixed gas in the plasma treatment appts have at second air pressure, the plasma treatment appts apply to carry out first time Passivation Treatment after second substrate bias power so that polymer of the polymer on the opening sidewalls top more than open bottom;
S3, the second passivation step;
In the second passivation step, while above-mentioned mixed gas have three air pressure, the plasma treatment appts apply the 3rd substrate bias power so that the polymer of the opening sidewalls bottom can be more than the polymer of open top;
Wherein, the second air pressure is more than the 3rd air pressure, and the second substrate bias power is less than the 3rd substrate bias power;
S4, repeats step S1-S3, until reaching target call to the etching depth of silicon.
2. the as claimed in claim 1 method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterised in that step S1 is included:
Processing gas will be full of in plasma treatment appts, using the first air pressure, the first substrate bias power, perform etching to form the opening in silicon face using the processing gas.
3. the as claimed in claim 1 method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterised in that duration of the duration in the first passivation step cycle more than the second passivation step cycle.
4. the as claimed in claim 1 method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterized in that, diluent gas is used to promote polymer gas in the mixed gas to spread and be evenly distributed in inwall and the bottom of the opening in the mixed gas, and promotes first passivation step, the carrying out of second passivation step.
5. the as claimed in claim 1 method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterised in that polymer gas are carbon fluoride gas in the mixed gas.
6. the as claimed in claim 1 method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterised in that the 3rd substrate bias power is pulsed bias power, and the 3rd substrate bias power can allow for high spike bias power and keep mean power.
7. the as claimed in claim 1 method for being used to carry High lateral wall etching effect in depth-width ratio silicon etching, it is characterised in that the scope that second air pressure is arranged is 90mT-160mT;The scope of second substrate bias power is 0-10W;
The scope that 3rd air pressure is arranged is 60mT-90mT;The scope that 3rd substrate bias power is arranged is 50-200W.
CN201510721444.9A 2015-10-30 2015-10-30 A method of for improving side wall etching effect in depth-width ratio silicon etching Active CN106653594B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1047122A2 (en) * 1999-04-21 2000-10-25 Alcatel Method of anisotropic etching of substrates
JP2001015489A (en) * 1999-06-29 2001-01-19 New Japan Radio Co Ltd Dry etching method
US20030003643A1 (en) * 2001-06-29 2003-01-02 Atmel Germany Gmbh Process for doping a semiconductor body
WO2013008824A1 (en) * 2011-07-12 2013-01-17 東京エレクトロン株式会社 Plasma etching method
CN103021934A (en) * 2012-12-20 2013-04-03 中微半导体设备(上海)有限公司 Method for forming through hole or contact hole

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1047122A2 (en) * 1999-04-21 2000-10-25 Alcatel Method of anisotropic etching of substrates
JP2001015489A (en) * 1999-06-29 2001-01-19 New Japan Radio Co Ltd Dry etching method
US20030003643A1 (en) * 2001-06-29 2003-01-02 Atmel Germany Gmbh Process for doping a semiconductor body
WO2013008824A1 (en) * 2011-07-12 2013-01-17 東京エレクトロン株式会社 Plasma etching method
CN103021934A (en) * 2012-12-20 2013-04-03 中微半导体设备(上海)有限公司 Method for forming through hole or contact hole

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