CN106591945B - 一种多晶硅复投方法 - Google Patents
一种多晶硅复投方法 Download PDFInfo
- Publication number
- CN106591945B CN106591945B CN201611083427.8A CN201611083427A CN106591945B CN 106591945 B CN106591945 B CN 106591945B CN 201611083427 A CN201611083427 A CN 201611083427A CN 106591945 B CN106591945 B CN 106591945B
- Authority
- CN
- China
- Prior art keywords
- flashboard
- polysilicon
- single crystal
- layers
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611083427.8A CN106591945B (zh) | 2016-11-30 | 2016-11-30 | 一种多晶硅复投方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611083427.8A CN106591945B (zh) | 2016-11-30 | 2016-11-30 | 一种多晶硅复投方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106591945A CN106591945A (zh) | 2017-04-26 |
CN106591945B true CN106591945B (zh) | 2019-03-19 |
Family
ID=58594578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611083427.8A Active CN106591945B (zh) | 2016-11-30 | 2016-11-30 | 一种多晶硅复投方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106591945B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108728902A (zh) * | 2017-04-18 | 2018-11-02 | 上海新昇半导体科技有限公司 | 一种多晶硅自动进料系统及其进料方法 |
CN109972200B (zh) * | 2019-04-18 | 2020-08-14 | 邢台晶龙电子材料有限公司 | 连续提拉单晶硅生长方法 |
CN110396715A (zh) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | 一种直拉单晶多次复投工艺 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0412085A (ja) * | 1990-04-27 | 1992-01-16 | Nkk Corp | シリコン単結晶の製造装置 |
CN101435106A (zh) * | 2008-11-21 | 2009-05-20 | 浙江瑞迪硅谷新能源科技有限公司 | 一种单晶硅棒的生产工艺及设备 |
CN201372325Y (zh) * | 2008-08-22 | 2009-12-30 | 昆山中辰矽晶有限公司 | 多晶成长炉连续加料器 |
CN102181917A (zh) * | 2011-05-17 | 2011-09-14 | 山东大学 | 一种人工晶体自动控制生长连续加料装置 |
CN202131400U (zh) * | 2011-06-10 | 2012-02-01 | 徐忠龙 | 复合式连续加料器 |
CN102345157A (zh) * | 2011-10-09 | 2012-02-08 | 内蒙古中环光伏材料有限公司 | 一种太阳能级直拉单晶硅的连续复投的生产方法 |
CN202202013U (zh) * | 2011-07-04 | 2012-04-25 | 浙江晶盛机电股份有限公司 | 用于单晶炉的外部连续投料机构 |
CN102677158A (zh) * | 2011-03-15 | 2012-09-19 | 上海晨安电炉制造有限公司 | 一种带副室结构的泡生法晶体生长炉 |
CN202450186U (zh) * | 2012-01-19 | 2012-09-26 | 宁夏日晶新能源装备股份有限公司 | 单晶炉二次加料漏斗装置 |
CN204370040U (zh) * | 2015-01-06 | 2015-06-03 | 湖北菲利华石英玻璃股份有限公司 | 一种蓝宝石制锭下料装置 |
CN105133010A (zh) * | 2015-08-31 | 2015-12-09 | 中卫市银阳新能源有限公司 | 一种单晶炉复投料装置 |
-
2016
- 2016-11-30 CN CN201611083427.8A patent/CN106591945B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0412085A (ja) * | 1990-04-27 | 1992-01-16 | Nkk Corp | シリコン単結晶の製造装置 |
CN201372325Y (zh) * | 2008-08-22 | 2009-12-30 | 昆山中辰矽晶有限公司 | 多晶成长炉连续加料器 |
CN101435106A (zh) * | 2008-11-21 | 2009-05-20 | 浙江瑞迪硅谷新能源科技有限公司 | 一种单晶硅棒的生产工艺及设备 |
CN102677158A (zh) * | 2011-03-15 | 2012-09-19 | 上海晨安电炉制造有限公司 | 一种带副室结构的泡生法晶体生长炉 |
CN102181917A (zh) * | 2011-05-17 | 2011-09-14 | 山东大学 | 一种人工晶体自动控制生长连续加料装置 |
CN202131400U (zh) * | 2011-06-10 | 2012-02-01 | 徐忠龙 | 复合式连续加料器 |
CN202202013U (zh) * | 2011-07-04 | 2012-04-25 | 浙江晶盛机电股份有限公司 | 用于单晶炉的外部连续投料机构 |
CN102345157A (zh) * | 2011-10-09 | 2012-02-08 | 内蒙古中环光伏材料有限公司 | 一种太阳能级直拉单晶硅的连续复投的生产方法 |
CN202450186U (zh) * | 2012-01-19 | 2012-09-26 | 宁夏日晶新能源装备股份有限公司 | 单晶炉二次加料漏斗装置 |
CN204370040U (zh) * | 2015-01-06 | 2015-06-03 | 湖北菲利华石英玻璃股份有限公司 | 一种蓝宝石制锭下料装置 |
CN105133010A (zh) * | 2015-08-31 | 2015-12-09 | 中卫市银阳新能源有限公司 | 一种单晶炉复投料装置 |
Also Published As
Publication number | Publication date |
---|---|
CN106591945A (zh) | 2017-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104032368B (zh) | 一种高效多晶硅锭的制备方法 | |
CN106591945B (zh) | 一种多晶硅复投方法 | |
CN106591937B (zh) | 一种凹陷式类单晶籽晶铸锭熔化结晶工艺 | |
CN104562192B (zh) | 一种多晶硅锭的铸造方法 | |
WO2020253032A1 (zh) | 拉晶方法、单晶炉 | |
CN102345157A (zh) | 一种太阳能级直拉单晶硅的连续复投的生产方法 | |
CN106319620B (zh) | 一种直拉单晶的拉晶方法 | |
CN102677158A (zh) | 一种带副室结构的泡生法晶体生长炉 | |
CN103215633A (zh) | 一种多晶硅的铸锭方法 | |
CN104562193B (zh) | 一种多晶硅锭的铸造方法 | |
CN102220633A (zh) | 一种半导体级单晶硅生产工艺 | |
CN104372399A (zh) | 一种单晶硅收尾方法及单晶硅制备方法 | |
CN103741206A (zh) | 一种多晶硅铸锭熔料及排杂工艺 | |
CN102644108A (zh) | 一种铸造法生长硅晶体的装料方法以及生长硅晶体的工艺 | |
CN103361724A (zh) | 硼-镓共掺高效多晶硅及其制备方法 | |
CN102776556B (zh) | 一种多晶硅锭及其制备方法和多晶硅片 | |
CN102242392A (zh) | 铸造法生产类似单晶硅锭炉内融化后晶种稳定炉底的方法 | |
CN102187018A (zh) | 晶体生长装置及晶体生长方法 | |
CN103422165A (zh) | 一种多晶硅及其制备方法 | |
CN106048718B (zh) | 一种多晶硅半熔铸锭用排杂方法 | |
CN103397377B (zh) | 多晶硅均匀长晶工艺及其铸锭炉热场加热装置 | |
CN109056055B (zh) | 一种单晶硅棒的生产方法 | |
CN103074681B (zh) | 一种二次加料方法 | |
CN102191536A (zh) | 定向凝固法生长硅晶体时控制坩埚底面结晶成核的方法 | |
CN102719889A (zh) | 一种多晶硅铸锭工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A method of polysilicon multiple input Effective date of registration: 20210421 Granted publication date: 20190319 Pledgee: Hefei Binhu fountainhead financing Company limited by guarantee Pledgor: ANHUI ELECTRIC GROUP SHARES Co.,Ltd. Registration number: Y2021980002832 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220401 Granted publication date: 20190319 Pledgee: Hefei Binhu fountainhead financing Company limited by guarantee Pledgor: ANHUI ELECTRIC GROUP SHARES Co.,Ltd. Registration number: Y2021980002832 |