CN106531749A - Sensing chip packaging structure and production method thereof - Google Patents
Sensing chip packaging structure and production method thereof Download PDFInfo
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- CN106531749A CN106531749A CN201510581949.XA CN201510581949A CN106531749A CN 106531749 A CN106531749 A CN 106531749A CN 201510581949 A CN201510581949 A CN 201510581949A CN 106531749 A CN106531749 A CN 106531749A
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- Prior art keywords
- sensing chip
- active region
- sensor chip
- chip packaging
- packaging structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention provides a sensing chip packaging structure and a production method thereof. The sensing chip packaging structure comprises a supporting plate, a sensing chip, and a line layer. The sensing chip is disposed on the supporting plate, and is provided with a top surface and at least a recessed part recessed from the top surface. The top surface is provided with an active area, and the recessed part is disposed on one side of the active area, and the depth of the recessed part is in a range from 100(mu)m to 400(mu)m. The line layer is disposed on the sensing chip, and is electrically connected with the active area, and at least a part of the line layer is extended from the active area to one side wall surface and one bottom surface of the recessed part.
Description
Technical field
The present invention relates to a kind of sensing chip packaging structure and its manufacture method, more particularly to a kind of naked
The sensing chip packaging structure and its manufacture method of dew active region.
Background technology
Optical sensing chip encapsulation module common at present mainly includes substrate, chip and adhesive body.
Chip is arranged on substrate and is electrically connected with substrate, and adhesive body is covered in surface and the core of substrate
On piece, to fix the chip and protect wire.In addition, the sensing area of chip would generally be by glass
Or other transparent materials are covered, without being exposed to out.However, when this partial optical is sensed
When chip encapsulation module is applied in identification of fingerprint sensor, finger cannot directly contact sensing area,
It is likely to affect the accuracy of identification.
In addition, transparent material is covered above sensing area, also can further increase optical sensing
The thickness of chip encapsulation module, and be unfavorable for being incorporated into optical sensing chip encapsulation module portable
Electronic installation in.
The content of the invention
The embodiment of the present invention is to provide a kind of sensing chip packaging structure and its manufacture method.In sense
Survey in chip-packaging structure, the active region of sensor chip is not covered by glass or other transparent materials
Lid, and external environment condition is directly exposed to, and can be applicable in various sensing elements.In addition, logical
Cross and depressed part is formed on sensor chip, can further shorten the distance between light source and active region.
A kind of chip senses chip-packaging structure of the present invention wherein embodiment offer, including support plate,
Sensor chip and line layer.Sensor chip is arranged on support plate, and wherein sensor chip has a top surface,
And at least depressed part for being recessed and formed by top surface.Top surface is provided with an active region, and depressed part
Positioned at the side of active region, and the depth of depressed part is between 100 μm to 400 μm.Line layer is formed
On sensor chip, to be electrically connected at active region, wherein at least part line layer is prolonged by active region
Extend side wall and a bottom surface of depressed part.
A wherein embodiment of the invention provides a kind of manufacture method of sensing chip packaging structure, its bag
Include:A wafer is provided, wafer includes multiple sensor chips, and each of which sensor chip has one
Active region and a definition at least pre-thinned area, wherein pre-thinned area is located at the side of active region, and contains
One border of lid sensor chip;The pre-thinned area of sensor chip each described is etched, with
A depressed part is formed in the side of each active region;Formed a circuit reassign layer on wafer;
One cutting step is performed to wafer, to form the multiple sensor chips being separated from each other, each of which
Sensor chip is provided with a line layer, and line layer is extended to the side wall of depressed part by active region
And a bottom surface;And multiple sensor chips are respectively arranged on multiple support plates, and pass through line layer
The active region of each sensor chip is made to be electrically connected at the support plate.
In the sensing chip packaging structure and its manufacture method provided by the embodiment of the present invention, can make
The active region of sensor chip is externally exposed in environment, with directly contact determinand, for example:Finger.
In addition, sensor chip is with least one depressed part being recessed by top surface, so that active region can pass through
It is laid in the bottom surface of depressed part to be electrically connected with support plate with the line layer of side wall.
To enable the feature and technology contents that are further understood that the present invention, refer to below in connection with this
Detailed description of the invention and accompanying drawing, but Figure of description is only provided with reference to being used with explanation, is not used
Come to the present invention person of being any limitation as.
Description of the drawings
Schematic top plan views of the Figure 1A for the sensing chip packaging structure of the embodiment of the present invention.
Generalized sections of the Figure 1B for Figure 1A IB-IB hatchings along the line.
Generalized sections of the Fig. 2 for the sensing chip packaging structure of another embodiment of the present invention.
Schematic top plan views of Fig. 3 A for the sensing chip packaging structure of another embodiment of the present invention.
Generalized sections of Fig. 3 B for Fig. 3 A IIIB-IIIB hatchings along the line.
Flow charts of the Fig. 4 for the manufacture method of the sensing chip packaging structure of the embodiment of the present invention.
Fig. 5 is schematic top plan view of the wafer of embodiment of the present invention the step of Fig. 4 in S100.
Amplification schematic top plan views of Fig. 5 A for the region A of Fig. 5.
Fig. 6 A are local overlooking of the sensor chip of embodiment of the present invention the step of Fig. 4 in S101
Schematic diagram.
Fig. 6 B are the generalized section of the sensor chip shown in Fig. 6 A.
Fig. 6 C are local of the sensor chip of another embodiment of the present invention the step of Fig. 4 in S101
Schematic top plan view.
Fig. 7 A are local overlooking of the sensor chip of embodiment of the present invention the step of Fig. 4 in S102
Schematic diagram.
Generalized sections of Fig. 7 B for the sensor chip of Fig. 7 A.
Fig. 8 A for the embodiment of the present invention sensing chip packaging structure the step of Fig. 4 in S103
Local overlooking schematic diagram.
Fig. 8 B are the generalized section of the sensor chip shown in Fig. 8 A.
Fig. 9 A for the embodiment of the present invention sensing chip packaging structure the step of Fig. 4 in S105
Local overlooking schematic diagram.
Fig. 9 B are the generalized section of the sensing chip packaging structure shown in Fig. 9 A.
Figure 10 A for the embodiment of the present invention sensing chip packaging structure the step of Fig. 4 in S106
Local overlooking schematic diagram.
Figure 10 B are the generalized section of the sensing chip packaging structure shown in Figure 10 A.
Figure 11 A are the sensing chip packaging structure of another embodiment of the present invention in processing step
Local overlooking schematic diagram.
Figure 11 B are the generalized section of the sensing chip packaging structure shown in Figure 11 A.
Figure 12 A are office of the sensing chip packaging structure of another embodiment of the present invention in processing step
Portion's schematic top plan view.
Figure 12 B are the generalized section of the sensing chip packaging structure shown in Figure 12 A.
Figure 13 A are office of the sensing chip packaging structure of another embodiment of the present invention in processing step
Portion's schematic top plan view.
Figure 13 B are the generalized section of the sensing chip packaging structure shown in Figure 13 A.
Description of reference numerals:
Sensing chip packaging structure 1,2,3
Support plate 10
Weld pad 100
Sensor chip 11,11 '
Sensor chip height H2
Top surface 11a
Basal surface 11b
Active region 112
Wiring region 113
Depressed part 115
Side wall 115s
Bottom surface 115b
Depressed part depth H 1
Line layer 12
First connection pad 121
Wire 122
Second connection pad 123
Bonding wire 13
Basal part 110
Protuberance 111
Light-emitting component 14
Barricade 15
Barricade width W
Molding body 16
Top surface 160
Wafer S1
Pre-thinned area 115 '
Circuit reassigns layer 12 '
Line of cut L
Angle theta
Process step S100~S106
Specific embodiment
Refer to Figure 1A and Figure 1B.Sensing chip packaging structures of the Figure 1A for the embodiment of the present invention
Schematic top plan view.Generalized sections of the Figure 1B for Figure 1A IB-IB hatchings along the line.
The sensing chip packaging structure provided by the embodiment of the present invention integrated can be applied to different senses
Survey in element, e.g. fingerprint identifier, pore identifier, blood oxygen concentration detector, heartbeat sense
Survey device, sensing environment light device or proximity sensor etc..In the embodiment of the present invention, sensor chip
Encapsulating structure 1 includes support plate 10, sensor chip 11 and line layer 12.
Support plate 10 can be metallic plate, insulation board or composite plate, and wherein composite plate is, for example, hard
Formula printed substrate (printed circuit board, PCB) or soft printed substrate (flexible
printed circuit,FPC).In the present embodiment, support plate 10 is printed substrate, and in support plate
Circuit (not shown) and multiple weld pads 100 are laid in 10, the wherein position of weld pad 100 can root
Arrange according to the configuration needs of sensor chip 11.
In addition, in the embodiment shown in Figure 1A, support plate 10 is square plate, but the present invention is simultaneously
The shape of support plate 10 is not limited.In other embodiments, support plate 10 can also have other geometry
Shape, for example:Circular, oval, square, rectangle or triangle.
Sensor chip 11 is arranged on support plate 10, and by least one bonding wire 13 and support plate 10
On weld pad 100 be electrically connected with.Specifically, sensor chip 11 have a top surface 11a and with top
A face 11a contrary basal surface 11b, and the top surface 11a of sensor chip 11 is provided with active region 112
And wiring region 113, wherein wiring region 113 is positioned at 112 periphery of active region.In wiring region 113
The control circuit being electrically connected with active region 112 is inside had been provided with, is sensed with receiving active region 112
Signal.
What deserves to be explained is, the sensor chip 11 of the embodiment of the present invention with being recessed by top surface 11a and
Formed an at least depressed part 115, wherein depressed part 115 be positioned at the wherein side of active region 112,
And cross the side surface of sensor chip 11.
Figure 1B is refer to, depressed part 115 has a side wall 115s and bottom surface 115b, wherein
Side wall 115s is connected between top surface 11a and bottom surface 115b.In one embodiment, side wall
115s is inclined-plane.Furthermore, an angle theta is formed between side wall 115s and top surface 11a,
And angle theta is between 110 degree to 140 degree.In addition, the depth H 1 of depressed part 115 can be less than
The height H2 of sensor chip 11.The height H2 of aforementioned sensor chip 11 is by sensor chip 11
The vertical range of top surface 11a to basal surface 11b.Specifically, the depth H 1 of depressed part 115 is
Between 100 μm to 400 μm.
In other words, sensor chip 11 can actually have a basal part 110 and to protrude from base
The protuberance 111 of 110 upper surface of bottom, and before protuberance 111 is gone out with 110 common definition of basal part
The depressed part 115 stated.Accordingly, the area of the plan view shape of protuberance 111 can be less than basal part 110
Plan view shape area, and the upper surface of basal part 110 be depressed part 115 bottom surface 115b.
In embodiments of the Figure 1A with Figure 1B, sensor chip 11 has two depressed parts 115, this
Two depressed parts 115 are respectively positioned at two opposition sides of active region 112.However, depressed part 115
Quantity actually can be determined according to the position of route arrangement with position, therefore is not limited in the present invention
System.For example, two depressed parts 115 may be located at two sides adjacents of active region 112.In addition,
In other embodiments, sensor chip 11 can also only have a depressed part 115 or have
Plural depressed part 115.
Figure 1A and Figure 1B is refer to, line layer 12 is formed on sensor chip 11, and is electrically connected
It is connected to active region 112.Specifically, line layer 12 be laid in sensor chip 11 top surface 11a,
Side the wall 115s and bottom surface 115b of depressed part 115, and by the control in aforementioned wiring region 113
Circuit processed is electrically connected to active region 112.
In one embodiment, line layer 12 include at least one first connection pads 121, at least one second
Connection pad 123 and the wire 122 being connected between the first connection pad 121 and the second connection pad 123.It is aforementioned
The quantity of the first connection pad 121, the second connection pad 123 and wire 122 can be according to sensor chip 11
Configuration needs and arrange, the present invention is not intended to limit.
It should be noted that, the first connection pad 121 is arranged at the top surface 11a of sensor chip 11, and electrically
The control circuit being connected in wiring region 113.Second connection pad 123 is then arranged at depressed part 115
Bottom surface 115b on, and wire 122 passes through depressed part 115 by first connection pad 121 of top surface 11a
Side wall 115s extend to the second connection pad 123 positioned at 115 bottom surface 115b of depressed part.Second connects
Pad 123 is simultaneously connected to the weld pad 100 on support plate 10 by bonding wire 13, so that sensor chip 11
Active region 112 can be electrically connected with the circuit in support plate 10.
That is, the side wall 115s and bottom surface 115b of depressed part 115 can as route arrangement area,
By the line layer 12 for being arranged at the side wall 115s and bottom surface 115b of depressed part 115, and weldering
Line 13, can make active region 112 be electrically connected to support plate 10.
Refer to Fig. 2.Fig. 2 shows the section of the sensing chip packaging structure of another embodiment of the present invention
Schematic diagram.In the present embodiment and Figure 1B, identical element uses identical label, and identical part
Repeat no more.
In the present embodiment, sensing chip packaging structure 2 also includes a light-emitting component 14, wherein sending out
Optical element 14 is arranged in depressed part 115.Specifically, light-emitting component 14 is disposed on depression
On the bottom surface 115b in portion 115, and the thickness of light-emitting component 14 is less than the depth of depressed part 115.
Light-emitting component 14 may be used to projection detection light beam to an object to be measured.Afterwards, sensor chip 11
Active region 112 receive the light reflected by determinand again, form determinand image, to enter
Row identification.Light-emitting component 14 can be light emitting diode (LED), LASER Light Source or infrared ray
Source, to provide monochromatic light or wide band light.
In the present embodiment, light-emitting component 14 is light emitting diode (LED), and light emitting diode
Earth terminal and voltage input end respectively positioned at the bottom and top of light-emitting component 14.Therefore, when send out
When optical element 14 is arranged on depressed part 115, light-emitting component 14 may be disposed at one of them and be electrically connected with
On second connection pad 123 on ground, so that positioned at the earth terminal electrical ground of 14 bottom of light-emitting component.
In addition, in the present embodiment, support plate 10 is provided with ON-OFF control circuit, positioned at light-emitting component 14
The voltage input end at top can be connected to the weld pad 100 on support plate 10 by bonding wire 13, electrically to connect
ON-OFF control circuit is connected to, so that the unlatching of the controllable light-emitting component 14 of ON-OFF control circuit and pass
Close.
In another embodiment, the earth terminal of light-emitting component 14 is all located at luminous unit with voltage input end
The top of part 14.In that case, light-emitting component 14 is not necessarily required to be arranged at the second connection pad
On 123, and the area that the bottom surface 115b that can be directly arranged at depressed part 115 is not covered by line layer 12
Domain.Also, the earth terminal of light-emitting component 14 can pass through two bonding wires 13 respectively with voltage input end
Two weld pads 100 being arranged on support plate 10 are electrically connected to, one of weld pad 100 is electrically connected with
Ground, another weld pad 100 are then electrically connected to ON-OFF control circuit.
It should be noted that, in known section senses chip-packaging structure, light source is altogether with chip
With being arranged on substrate, as the structure of chip is limited, make between light source and the sensing area of chip
Distance further cannot shorten.
However, in embodiments of the present invention, by forming depressed part 115 in sensor chip 11, can
Light-emitting component 14 is made to be directly arranged on sensor chip 11.Thus, can further shorten luminous
The distance between element 14 and active region 112, and the accuracy of image identification can be improved.In addition,
Compared to existing encapsulating structure, as the light-emitting component 14 in the present invention is directly arranged at sensing core
On piece 11, it is also possible to the overall volume of sensing chip packaging structure 2 is further reduced.
Particularly in one embodiment, sensing chip packaging structure 2 may include that at least two can send
The light-emitting component 14 of different color light, to be applied to blood oxygen concentration detector.In this case, feel
Survey chip 11 and there can be at least two depressed parts 115, to be respectively provided with these light-emitting components 14.
That is, compared to existing encapsulating structure, the volume of sensing chip packaging structure 2 can't be because
Quantity for light-emitting component 14 increases and becomes big, and can maintain certain size.
Then, Fig. 3 A and Fig. 3 B be refer to.Sensing cores of Fig. 3 A for another embodiment of the present invention
The schematic top plan view of chip package.Fig. 3 B show for the section of Fig. 3 A IIIB-IIIB hatchings along the line
It is intended to.In the sensing chip packaging structure 3 of the present embodiment, and identical in the embodiment of Fig. 2
Element has identical label.
Unlike embodiment shown in the present embodiment and Fig. 2, the sensor chip encapsulation of the present embodiment
Structure 3 also includes barricade 15 and molding body 16.
Please also refer to Fig. 3 A, barricade 15 is formed at the top surface 11a of sensor chip 11, and around master
Dynamic area 112, to define a closed area, in the technique for forming molding body 16, it is to avoid
Molding body 16 covers active region 112.The function of barricade 15 will coordinate sensor chip to seal below
The manufacture method of assembling structure is described in detail, and here is not repeated.
In addition, in the present embodiment, barricade 15 and the part positioned at 11 top surface 11a of sensor chip
Line layer 12 is overlapped.As shown in Figure 3 B, barricade 15 is to be stacked at line layer 12 (first
Connection pad 121) on, can protection circuit layer 12 it is not oxidized or damage.In one embodiment, barricade
15 height is that, between 2 μm to 50 μm, and the width W of barricade 15 is between 5 μm to 100 μm
Between.
As long as however, barricade 15 can be used to avoid molding body 16 from covering active region 112, barricade 15
Need not limit with the relative position of line layer 12 and especially.In other embodiments, part circuit
Layer 12 can also be arranged on barricade 15, or the line layer 12 of can also getting along well of barricade 15 is overlapped,
And it is directly arranged at the top surface 11a of sensor chip 11.In addition, the material for constituting barricade 15 can be selected
Photosensitive material (photo-imageable material) is selected, it is e.g. existing in lithography technique
Photo anti-corrosion agent material, or other insulating materials.
Molding body 16 covers support plate 10, section senses chip 11 and line layer 12.It is worth mentioning
, the top end face of a top surface 160 and barricade 15 of molding body 16 flushes or less than gear
The top end face of wall 15.That is, the active region 112 of sensor chip 11 can't be by molding body
16 cover, and the closed area that can be formed by barricade 15 is externally exposed environment, is treated with sensing one
Survey object.
In the present embodiment, the material for constituting molding body 16 can be light transmissive material, so that luminous unit
The detection light beam sent by part 14 can be projected to object to be measured.For example, when detection light beam is for can
When seeing light, the material for constituting molding body 16 must be transparent material, and penetrate can visible ray.Another
In one embodiment, when it is infrared light to detect light beam, the material for constituting molding body 16 selects infrared light
Transparent material.
It should be noted that, Figure 1A can also include gear with the sensing chip packaging structure 1 shown in 1B
Wall 15 and molding body 16.Due in the sensing chip packaging structure 1 shown in Figure 1A and 1B not
With light-emitting component 14, therefore the material of composition molding body 16 is not limited, and arbitrarily can be selected
Select transparent material or opaque material.
One embodiment of the invention simultaneously provides a kind of manufacture method of sensing chip packaging structure.Refer to
Fig. 4.Flow charts of the Fig. 4 for the manufacture method of the sensing chip packaging structure of the embodiment of the present invention.
In the step s 100, there is provided a wafer, wherein wafer include multiple sensor chips, wherein often
One sensor chip has an active region and defines an at least pre-thinned area, and wherein pre-thinned area is located at
The side of active region, and cover a border of sensor chip.
Please coordinate with reference to Fig. 5 and Fig. 5 A.Sensing chip packaging structures of the Fig. 5 for the embodiment of the present invention
Schematic top plan view in the step of Fig. 4.Fig. 5 A are overlooked for the amplification of the region A of Fig. 5 and are illustrated
Figure.
Please coordinate with reference to Fig. 5 and Fig. 5 A.The material for constituting wafer S1 is usually silicon, but it is also possible to
It is other semi-conducting materials, such as GaAs, gallium nitride (GaN) or carborundum (SiC).
In the embodiment of the present invention, wafer S1 has completed the technique of element making, and including multiple sensing cores
Piece 11, and each sensor chip 11 have an active region 112, be configured at 112 periphery of active region
Wiring region 113 and an at least pre-thinned area 115 '.
In addition, the control circuit being electrically connected with active region 112 has been formed in wiring region 113,
And pre-thinned area 115 ' is positioned at the side of active region 112, and the scope in pre-thinned area 115 ' is extended to
A wherein border of sensor chip 11.
Pre-thinned area referring again to Fig. 4, then in step S101, to each sensor chip
It is etched, a depressed part is formed with the side of the active region 112 in each sensor chip 11.
Please coordinate reference picture 6A to Fig. 6 B.Fig. 6 A are the sensor chip of the embodiment of the present invention in Fig. 4
The step of S101 in local overlooking schematic diagram.Fig. 6 B are cuing open for the sensor chip shown in Fig. 6 A
Face schematic diagram.
As shown in Figure 6B, after being etched to the pre-thinned area 115 ' of sensor chip 11, formed
The depressed part 115 formed to lower recess from top surface 11a.Also, depressed part 115 has side wall
A face 115s and bottom surface 115b, wherein side wall 115s are to be connected to top surface 11a and bottom surface 115b
Between, and be inclined-plane.In the present embodiment, the depth of depressed part 115 is between 100 μm to 400 μm
Between.It is aforementioned to be lost by performing wafer scale the step of pre-thinned area 115 ' forms depressed part 115
Carving technology (wafer-level etching process) including painting photoresist, is exposed realizing
The known lithography techniques such as photodevelopment, etching and removal photoresist.
That is, after above-mentioned etching step is carried out, sensor chip 11 includes a basal part
110 and protrude from the protuberance 111 of 110 upper surface of basal part, wherein active region 112 and cloth
Line area 113 is the top surface positioned at protuberance 111.In addition, basal part 110 has is not raised portion
111 upper surfaces for covering, that is, the bottom surface 115b of depressed part 115, and the side of protuberance 111
Surface is the side wall 115s of depressed part 115.In addition, protuberance 111 is relative to upper surface
The depth of depressed part 115 is highly.
In the embodiment shown in Fig. 6 A, sensor chip 11 has two depressed parts 115, respectively
It is formed at two opposition sides of active region 112.However, in other embodiments, as shown in Figure 6 C,
Sensor chip 11 ' can also have four depressed parts 115 as desired, cross sensor chip respectively
11 four edges circle.In another embodiment, sensor chip 11 can also only have a depressed part
115, it is not intended to limit in the present invention.
Referring again to Fig. 4, in step s 102, formation circuit reassigns layer on wafer.Please match somebody with somebody
Reference picture 7A and Fig. 7 B are closed, wherein Fig. 7 A are the sensor chip of the embodiment of the present invention Fig. 4's
Local overlooking schematic diagram in step S102, and Fig. 7 B show for the section of the sensor chip of Fig. 7 A
It is intended to.
As shown in Fig. 7 A and Fig. 7 B, circuit reassigns the top surface that layer 12 ' is formed at sensor chip 11
On 11a, side the wall 115s and bottom surface 115b of depressed part 115.Circuit reassigns layer 12 ' and wraps
Include multiple the first connection pads 121 positioned at top surface 11a, multiple positioned at 115 bottom surface 115b's of depressed part
Second connection pad 123, and a plurality of wire 122, wherein these wires 122 are connected to each first
Between connection pad 121 and each second connection pad 123.
First connection pad 121 is arranged at the top surface 11a of sensor chip 11, and is electrically connected to wiring region
Control circuit in 113.Second connection pad 123 is then arranged on the bottom surface 115b of depressed part 115,
And wire 122 is prolonged by the side wall 115s of depressed part 115 by first connection pad 121 of top surface 11a
Extend the second connection pad 123 positioned at 115 bottom surface 115b of depressed part.
Formed the step of circuit reassigns layer 12 ' and can be realized by lithography process.It should be noted that,
In lithography process, the step of including exposed and developed (development).Therefore, depressed part
115 side wall 115s is inclined-plane, it can be ensured that the step of exposed and developed (development)
In, the side wall 115s of depressed part 115 all by irradiation, and can form wire 122, in order to avoid affect
Electric connection between first connection pad 121 and the second connection pad 123.
In addition, in subsequent technique, the active region 112 of sensor chip 11 can be recessed by being arranged at
Multiple second connection pads 123 of 115 bottom surface 115b of sunken portion, the circuit being electrically connected with support plate 10.According to
This, constitute circuit reassign layer 12 ' material can be nickel, tin, silver or its alloy etc. be easier to
The metal of the engagement of weld pad 100 on support plate 10.
Referring again to Fig. 4.Then, in step s 103, one is formed on each sensor chip
Barricade, wherein barricade surround active region, to define a closed area.
Please coordinate reference picture 8A and Fig. 8 B, sensor chips of the wherein Fig. 8 A for the embodiment of the present invention
Local overlooking schematic diagram of encapsulating structure the step of Fig. 4 in S103.Fig. 8 B are shown in Fig. 8 A
Sensor chip generalized section.
As shown in Figure 8 A and 8 B, barricade 15 is formed at the top surface 11a of sensor chip 11, and
Around active region 112.In one embodiment, the material for constituting barricade 15 can be photosensitive material,
For example, photo anti-corrosion agent material.Therefore, by painting photoresist, exposure and can develop
Barricade 15 is formed etc. technique.The height of barricade 15 ranges approximately from 2 μm to 50 μm, and barricade
15 width W is between 5 μm to 100 μm.
In the present embodiment, barricade 15 is to be stacked at part circuit to reassign on layer 12 ', therefore shape
The step of into barricade 15, was performed after the step of forming circuit and reassign layer 12 '.In other realities
Apply in example, formed barricade 15 the step of with formed circuit reassign layer 12 ' the step of sequencing
It is not restricted.
Then, refer to Fig. 4.In step S104, a cutting step is performed to wafer, with shape
Into the multiple sensor chips being separated from each other, each of which sensor chip is provided with a line layer, and
Line layer is extended to side wall and a bottom surface of depressed part by active region.
Fig. 8 A and Fig. 8 B are continued referring to, when cutting step is performed to wafer S1 (such as Fig. 5),
It is along a plurality of line of cut L interlaced with each other, to form the multiple sensor chips 11 being separated from each other.
It is noted that after aforesaid cutting step, each sensor chip 11 is with by circuit
The line layer 12 for reassigning the cutting of layer 12 ' and being formed.It is similar with circuit reassignment layer 12 ', line layer
12 equally include multiple first connection pads 121, multiple second connection pads 123 and a plurality of are connected to
Wire 122 between each first connection pad 121 and each second connection pad 123, will not be described here line layer
Position and effect set by 12.
Referring again to Fig. 4.Subsequently, in step S105, multiple sensor chips are respectively arranged at
On multiple support plates, and the active region of each sensor chip is made to be electrically connected at support plate.Please coordinate ginseng
According to Fig. 9 A and Fig. 9 B, wherein Fig. 9 A are the sensing chip packaging structure of the embodiment of the present invention in Fig. 4
The step of S105 in local overlooking schematic diagram.Fig. 9 B are the sensor chip encapsulation shown in Fig. 9 A
The generalized section of structure.
Specifically, Fig. 9 A are refer to, circuit and multiple weld pads on support plate 10, has been previously provided with
100, and the sensor chip 11 after cutting is arranged at the precalculated position on support plate 10.
In one embodiment, it is by routing (wire bonding) technique, to form a plurality of bonding wire
13, by multiple second connection pads 123 on the 115 bottom surface 115b of depressed part be electrically connected with
Corresponding weld pad 100 on support plate 10.As it was previously stated, line layer 12 can be electrically connected to wiring region
Control circuit in 113, so that the weld pad 100 on support plate 10 is electrically connected at active region 112.
Continue referring to Fig. 4.In step s 106, a molding body is formed with encapsulating carrier plate, sensing
Chip and line layer, wherein molding body expose active region.
In one embodiment, can be by performing transfer shaping technology (transfer molding process)
To form molding body.It should be noted that, when transfer shaping technology is performed, can be by support plate 10 and sense
Survey chip 11 to be positioned in mould jointly, and inject molding colloid in a mold.It is solid in molding colloid
After change, you can form molding body.
Refer to Figure 10 A and 10B.Sensing chip packaging structures of Figure 10 A for the embodiment of the present invention
Local overlooking schematic diagram the step of Fig. 4 in S106.Figure 10 B are the sensing shown in Figure 10 A
The generalized section of chip-packaging structure.
It should be noted that, when molding colloid is injected in a mold, formed in step s 103
Barricade 15 can prevent molding colloid from flowing in active region 112.Accordingly, a top table of molding body 16
Face 160 can be flushed (as shown in Figure 10 B) with a top end face of barricade 15, or is less than barricade
15 top end face.Therefore, the active region 112 of sensor chip 11 can't be covered by molding body 16,
And the closed area that can be formed by barricade 15 is externally exposed environment.
In addition, it should be noted that, in the present embodiment, as bonding wire 13 is directly to depression
Second connection pad 123 of 115 bottom surface 115b of portion, and the foundation electric connection of active region 112, therefore
The peak of bonding wire 13 can be less than the horizontal level that the top surface 11a of sensor chip 11 is located.Additionally,
The top end face of the top surface 160 and barricade 15 of molding body 16 is flushed, therefore can cover bonding wire 13.
But in other embodiments, it is also possible to by other means come encapsulate sensor chip 11 and carry
Plate 10.For example, the lid of opening can covers sensor chip 11 and carry by providing one
Plate 10, and make the active region 112 of sensor chip 11 be come out by opening, it is also possible to reach identical
Effect.In that case, step S103 can be omitted, that is, need not form barricade 15
In the top surface 11a of sensor chip 11.
In the manufacture method of the sensing chip packaging structure of another embodiment, step S102 is completed
Afterwards, can also include arranging a light-emitting component in depressed part.
Specifically, Figure 11 A and Figure 11 B be refer to.Figure 11 A are another embodiment of the present invention
The local overlooking schematic diagram in processing step of sensing chip packaging structure.Figure 11 B are Figure 11 A
The generalized section of shown sensing chip packaging structure.
In the present embodiment, light-emitting component 14 is provided on the bottom surface of depressed part 115, also,
The thickness of light-emitting component 14 is less than the depth of depressed part 115.In addition, when light-emitting component 14
When bottom is provided with earth terminal, light-emitting component 14 is the second connection pad for being stacked at one of electrical ground
On 123.That is, aforesaid second connection pad 123 is ground mat, and it is connected to leading for ground mat
Line 122 and the first connection pad 121 are ground path.
In another embodiment, light when the earth terminal of light-emitting component 14 is all located at voltage input end
During the top of element 14, light-emitting component 14 can be directly arranged at the bottom surface 115b of depressed part 115,
Without being stacked on the second connection pad 123.
After the depressed part 115 that light-emitting component 14 is arranged at sensor chip 11, wafer is held
Row cutting step, to form multiple sensor chips 11 being separated from each other.Then, Figure 12 A be refer to
With Figure 12 B.Figure 12 A are the sensing chip packaging structure of another embodiment of the present invention in processing step
In local overlooking schematic diagram.Figure 12 B are the section of the sensing chip packaging structure shown in Figure 12 A
Schematic diagram.
In fig. 12, the sensor chip 11 for being provided with light-emitting component 14 is arranged on support plate 10.
Sensor chip 11 is being arranged in the step on support plate 10, also including a formation at least bonding wire 13,
So that light-emitting component 14 is electrically connected at support plate 10.As shown in Figure 12 B, light-emitting component 14 passes through
Bonding wire 13 is connected to the weld pad 100 on support plate 10, so as to the circuit being electrically connected in support plate 10,
E.g. ON-OFF control circuit.
Then, Figure 13 A and Figure 13 B be refer to.Sensings of Figure 13 A for another embodiment of the present invention
Local overlooking schematic diagram of the chip-packaging structure in processing step.Figure 13 B are shown in Figure 13 A
The generalized section of sensing chip packaging structure.
It is similar with step S106 shown in Fig. 4, molding body 16 is formed with encapsulating carrier plate 10, sensing
Chip 11, light-emitting component 14 and line layer 12, wherein molding body 16 can expose sensor chip 11
Active region 112.
(possibility effect of embodiment)
In sum, beneficial effects of the present invention can be to be provided in the embodiment of the present invention
In sensing chip packaging structure and its manufacture method, it is externally exposed can the active region of sensor chip
In environment, with directly contact determinand, for example:Finger.In addition, sensor chip has at least one
The individual depressed part being recessed by top surface, so that active region can be by being laid in the bottom surface of depressed part and side wall
The line layer in face is electrically connected with support plate.
Additionally, by forming depressed part in sensor chip, light-emitting component can be made to be directly arranged at sensing
On chip.Thus, the distance between light-emitting component and active region further can be shortened, and can carry
The accuracy of high image identification.In addition, compared to existing encapsulating structure, due in the present invention
Light-emitting component is directly arranged on sensor chip, it is also possible to make the overall body of sensing chip packaging structure
Product further reduces.
The foregoing is only the preferable possible embodiments of the present invention, patent that is non-therefore limiting to the present invention
Scope, therefore change with the equivalence techniques done by description of the invention and accompanying drawing content such as, wrap
It is contained in protection scope of the present invention.
Claims (18)
1. a kind of sensing chip packaging structure, it is characterised in that the sensing chip packaging structure bag
Include:
One support plate;
One sensor chip, is arranged on the support plate, wherein the sensor chip has a top surface,
And at least depressed part for being recessed and being formed by the top surface, the top surface is provided with an active region,
And the depressed area is in the side of the active region, the depth of the depressed part between 100 μm extremely
400μm;And
One line layer, is formed on the sensor chip, to be electrically connected at the active region, its
In at least partly the line layer side wall and of the depressed part is extended to by the active region
Bottom surface.
2. sensing chip packaging structure as claimed in claim 1, wherein the side wall is oblique
Face.
3. sensing chip packaging structure as claimed in claim 1, also including a barricade, is formed at
The top surface, and the active region is surrounded, to define a closed area, wherein the barricade
, between 2 μm to 50 μm, the width of the barricade is between 5 μm to 100 μm for height.
4. sensing chip packaging structure as claimed in claim 3, wherein the barricade be located at institute
State the overlapped setting of the part line layer of top surface.
5. sensing chip packaging structure as claimed in claim 4, wherein the barricade is stacked at institute
State on line layer.
6. sensing chip packaging structure as claimed in claim 3, also including a molding body, wherein
The molding body covers the support plate, the sensor chip and the line layer, wherein the molding
Body exposes the active region.
7. sensing chip packaging structure as claimed in claim 6 a, wherein top of the molding body
Surface is less than a top end face of the barricade or is flushed with the top end face.
8. sensing chip packaging structure as claimed in claim 1, also including a light-emitting component, institute
State light-emitting component to be arranged in the depressed part.
9. sensing chip packaging structure as claimed in claim 8, wherein the line layer is at least wrapped
Include a ground path for being arranged at the side wall and one be arranged at the ground mat of the bottom surface, it is described
Light-emitting component is folded to be located on the ground mat, and passes through the ground path electrical ground.
10. sensing chip packaging structure as claimed in claim 8, also including an at least bonding wire, its
Described in light-emitting component the support plate is electrically connected at by the bonding wire.
11. sensing chip packaging structures as claimed in claim 1, also including a plurality of bonding wire, wherein
The active region is electrically connected at the support plate by the line layer and the bonding wire.
A kind of 12. manufacture methods of sensing chip packaging structure, it is characterised in that the sensor chip
The manufacture method of encapsulating structure includes:
There is provided a wafer, the wafer includes multiple sensor chips, described in each of which, sense core
Piece has an active region and defines an at least pre-thinned area, wherein the pre-thinned area is located at the master
The side in dynamic area, and cover a border of the sensor chip;
The pre-thinned area of sensor chip each described is etched, with described in each
The side of active region forms a depressed part;
Formed a circuit reassign layer on the wafer;
One cutting step is performed to the wafer, to form the multiple described sensor chip being separated from each other,
Sensor chip described in each of which is provided with a line layer, and the line layer by the active region
Extend to side wall and a bottom surface of the depressed part;And
Multiple sensor chips are respectively arranged on multiple support plates, and make each described sensing
The active region of chip is electrically connected at the support plate.
The manufacture method of 13. sensing chip packaging structures as claimed in claim 12, is also included in
A barricade is formed on each described sensor chip, wherein the barricade surrounds the active region, with
Define a closed area.
The manufacture method of 14. sensing chip packaging structures as claimed in claim 13, wherein being formed
The step of barricade, was performed after the step of forming the circuit and reassign layer.
The manufacture method of 15. sensing chip packaging structures as claimed in claim 13, will be multiple
After the sensor chip is respectively arranged at the step on multiple support plates, also including forming a mould
Body is sealed to encapsulate the support plate, the sensor chip and the line layer, wherein the molding body is sudden and violent
Reveal the active region.
The manufacture method of 16. sensing chip packaging structures as claimed in claim 15, wherein described
One top surface of molding body less than the barricade end face or with the end face.
The manufacture method of 17. sensing chip packaging structures as claimed in claim 12, also includes:
One light-emitting component is set in the depressed part, wherein being respectively arranged in multiple sensor chips
In step on multiple support plates, the light-emitting component passes through the line layer electrical ground.
The manufacture method of 18. sensing chip packaging structures as claimed in claim 17, will be multiple
The sensor chip is respectively arranged in the step on multiple support plates, is also included:Formed at least
One bonding wire, so that the light-emitting component is electrically connected at the support plate.
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