CN106463612A - 磁阻元件、磁传感器以及电流传感器 - Google Patents
磁阻元件、磁传感器以及电流传感器 Download PDFInfo
- Publication number
- CN106463612A CN106463612A CN201580028916.0A CN201580028916A CN106463612A CN 106463612 A CN106463612 A CN 106463612A CN 201580028916 A CN201580028916 A CN 201580028916A CN 106463612 A CN106463612 A CN 106463612A
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- Prior art keywords
- magnetoresistive element
- ferromagnetic layer
- layer
- duplexer
- magnetic field
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 309
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 134
- 230000005415 magnetization Effects 0.000 claims abstract description 51
- 230000008878 coupling Effects 0.000 claims abstract description 43
- 238000010168 coupling process Methods 0.000 claims abstract description 43
- 238000005859 coupling reaction Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000005303 antiferromagnetism Effects 0.000 claims description 68
- 239000000956 alloy Substances 0.000 claims description 37
- 229910045601 alloy Inorganic materials 0.000 claims description 37
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 229910052742 iron Inorganic materials 0.000 claims description 15
- 230000011514 reflex Effects 0.000 claims description 15
- 229910052748 manganese Inorganic materials 0.000 claims description 13
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 3
- 229910000575 Ir alloy Inorganic materials 0.000 claims 1
- 229910000914 Mn alloy Inorganic materials 0.000 claims 1
- 230000005290 antiferromagnetic effect Effects 0.000 abstract 4
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 209
- 230000008859 change Effects 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 230000009021 linear effect Effects 0.000 description 16
- 238000001514 detection method Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 11
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- 230000000052 comparative effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 230000033228 biological regulation Effects 0.000 description 6
- 239000005001 laminate film Substances 0.000 description 6
- 230000003827 upregulation Effects 0.000 description 6
- 229910003271 Ni-Fe Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
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- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000005307 ferromagnetism Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910003286 Ni-Mn Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-113051 | 2014-05-30 | ||
| JP2014113051 | 2014-05-30 | ||
| PCT/JP2015/065214 WO2015182644A1 (ja) | 2014-05-30 | 2015-05-27 | 磁気抵抗素子、磁気センサおよび電流センサ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106463612A true CN106463612A (zh) | 2017-02-22 |
Family
ID=54698968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580028916.0A Pending CN106463612A (zh) | 2014-05-30 | 2015-05-27 | 磁阻元件、磁传感器以及电流传感器 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6296155B2 (ja) |
| CN (1) | CN106463612A (ja) |
| WO (1) | WO2015182644A1 (ja) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267698A (zh) * | 2018-01-08 | 2018-07-10 | 上海交通大学 | 一种提高层叠复合磁传感器灵敏度的方法 |
| CN108551339A (zh) * | 2017-12-15 | 2018-09-18 | 江苏多维科技有限公司 | 一种基于磁电阻的双稳态磁开关及系统 |
| CN109752677A (zh) * | 2019-01-10 | 2019-05-14 | 东南大学 | 一种双电桥式薄膜磁阻传感器 |
| CN110709720A (zh) * | 2017-05-23 | 2020-01-17 | Tdk株式会社 | 磁传感器 |
| CN111433620A (zh) * | 2017-12-04 | 2020-07-17 | 株式会社村田制作所 | 磁传感器 |
| CN111433621A (zh) * | 2018-01-25 | 2020-07-17 | 株式会社村田制作所 | 磁传感器及电流传感器 |
| CN111512172A (zh) * | 2017-12-26 | 2020-08-07 | 阿尔卑斯阿尔派株式会社 | 磁场施加偏置膜及使用其的磁检测元件及磁检测装置 |
| CN113574694A (zh) * | 2019-04-09 | 2021-10-29 | 株式会社村田制作所 | 磁阻元件及磁传感器 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6569824B2 (ja) * | 2016-12-19 | 2019-09-04 | 株式会社村田製作所 | 磁気抵抗素子、および磁気センサ |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146038A (zh) * | 1995-08-11 | 1997-03-26 | 富士通株式会社 | 自旋阀磁阻效应磁头及磁盘驱动器 |
| JPH0992907A (ja) * | 1995-09-23 | 1997-04-04 | Nec Corp | 磁気抵抗効果素子 |
| CN1164088A (zh) * | 1996-04-26 | 1997-11-05 | 富士通株式会社 | 磁阻变换器、形成磁膜的方法和磁记录/重放驱动器 |
| CN1352791A (zh) * | 1999-07-05 | 2002-06-05 | 富士通株式会社 | 自旋阀磁阻效应磁头和使用该磁头的复合磁头及磁记录介质驱动装置 |
| JP2002267692A (ja) * | 2001-03-08 | 2002-09-18 | Yazaki Corp | 電流センサ |
| CN101150171A (zh) * | 2007-11-20 | 2008-03-26 | 北京科技大学 | 一种用于交换偏置型磁电阻传感器元件的多层膜材料 |
| JP2010080008A (ja) * | 2008-09-26 | 2010-04-08 | Fujitsu Ltd | 再生磁気ヘッド |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4809109A (en) * | 1988-03-25 | 1989-02-28 | International Business Machines Corporation | Magnetoresistive read transducer and method for making the improved transducer |
| JP2003208707A (ja) * | 2002-01-11 | 2003-07-25 | Hitachi Ltd | 磁気ヘッド及び磁気ディスク装置 |
| JP5686635B2 (ja) * | 2011-03-07 | 2015-03-18 | アルプス電気株式会社 | 磁気センサ及びその製造方法 |
| JP2014089088A (ja) * | 2012-10-30 | 2014-05-15 | Alps Electric Co Ltd | 磁気抵抗効果素子 |
-
2015
- 2015-05-27 CN CN201580028916.0A patent/CN106463612A/zh active Pending
- 2015-05-27 JP JP2016523529A patent/JP6296155B2/ja active Active
- 2015-05-27 WO PCT/JP2015/065214 patent/WO2015182644A1/ja active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146038A (zh) * | 1995-08-11 | 1997-03-26 | 富士通株式会社 | 自旋阀磁阻效应磁头及磁盘驱动器 |
| JPH0992907A (ja) * | 1995-09-23 | 1997-04-04 | Nec Corp | 磁気抵抗効果素子 |
| CN1164088A (zh) * | 1996-04-26 | 1997-11-05 | 富士通株式会社 | 磁阻变换器、形成磁膜的方法和磁记录/重放驱动器 |
| CN1352791A (zh) * | 1999-07-05 | 2002-06-05 | 富士通株式会社 | 自旋阀磁阻效应磁头和使用该磁头的复合磁头及磁记录介质驱动装置 |
| JP2002267692A (ja) * | 2001-03-08 | 2002-09-18 | Yazaki Corp | 電流センサ |
| CN101150171A (zh) * | 2007-11-20 | 2008-03-26 | 北京科技大学 | 一种用于交换偏置型磁电阻传感器元件的多层膜材料 |
| JP2010080008A (ja) * | 2008-09-26 | 2010-04-08 | Fujitsu Ltd | 再生磁気ヘッド |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110709720A (zh) * | 2017-05-23 | 2020-01-17 | Tdk株式会社 | 磁传感器 |
| CN110709720B (zh) * | 2017-05-23 | 2021-10-29 | Tdk株式会社 | 磁传感器 |
| CN111433620B (zh) * | 2017-12-04 | 2022-06-28 | 株式会社村田制作所 | 磁传感器 |
| CN111433620A (zh) * | 2017-12-04 | 2020-07-17 | 株式会社村田制作所 | 磁传感器 |
| CN108551339A (zh) * | 2017-12-15 | 2018-09-18 | 江苏多维科技有限公司 | 一种基于磁电阻的双稳态磁开关及系统 |
| CN111512172B (zh) * | 2017-12-26 | 2022-07-26 | 阿尔卑斯阿尔派株式会社 | 磁场施加偏置膜及使用其的磁检测元件及磁检测装置 |
| CN111512172A (zh) * | 2017-12-26 | 2020-08-07 | 阿尔卑斯阿尔派株式会社 | 磁场施加偏置膜及使用其的磁检测元件及磁检测装置 |
| CN108267698B (zh) * | 2018-01-08 | 2020-07-14 | 上海交通大学 | 一种提高层叠复合磁传感器灵敏度的方法 |
| CN108267698A (zh) * | 2018-01-08 | 2018-07-10 | 上海交通大学 | 一种提高层叠复合磁传感器灵敏度的方法 |
| CN111433621A (zh) * | 2018-01-25 | 2020-07-17 | 株式会社村田制作所 | 磁传感器及电流传感器 |
| CN111433621B (zh) * | 2018-01-25 | 2022-03-04 | 株式会社村田制作所 | 磁传感器及电流传感器 |
| CN109752677A (zh) * | 2019-01-10 | 2019-05-14 | 东南大学 | 一种双电桥式薄膜磁阻传感器 |
| CN113574694A (zh) * | 2019-04-09 | 2021-10-29 | 株式会社村田制作所 | 磁阻元件及磁传感器 |
| CN113574694B (zh) * | 2019-04-09 | 2024-01-05 | 株式会社村田制作所 | 磁阻元件及磁传感器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2015182644A1 (ja) | 2017-04-20 |
| JP6296155B2 (ja) | 2018-03-20 |
| WO2015182644A1 (ja) | 2015-12-03 |
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Application publication date: 20170222 |
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