CN106463380A - Inductive monitoring of conductive trench depth - Google Patents

Inductive monitoring of conductive trench depth Download PDF

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Publication number
CN106463380A
CN106463380A CN201580029881.2A CN201580029881A CN106463380A CN 106463380 A CN106463380 A CN 106463380A CN 201580029881 A CN201580029881 A CN 201580029881A CN 106463380 A CN106463380 A CN 106463380A
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substrate
polishing
value sequence
signal
layer
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CN201580029881.2A
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CN106463380B (en
Inventor
W·陆
Z·王
H·G·伊拉瓦尼
D·J·本韦格努
I·卡尔松
B·A·斯伟德克
W-C·图
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Abstract

In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

Description

The induction monitoring of the conductive trench degree of depth
Technical field
It relates to sensing (inductive) monitoring during the chemically mechanical polishing of substrate.
Background technology
Integrated circuit is generally by conductive layer, semi-conductive layer or insulating barrier deposition sequentially on silicon and at substrate Upper formation.Multiple manufacturing process require to the layer planarization on substrate.For example, manufacturing step relates in patterned exhausted Conductive filler layer is deposited, to fill groove in insulating barrier or hole in edge layer.Packing layer is then polished, until described insulating barrier Protruding pattern be exposed till.After planarization, remaining conductive filler layer between the raised design of insulating barrier Some forms through hole, connector and line, provides conductive path between described through hole, connector and the line thin film circuit on substrate Footpath.
Chemically mechanical polishing (CMP) is a kind of generally acknowledged flattening method.This flattening method usually requires that substrate is filled Fit on carrier head.Polishing pad that the surface being exposed of substrate rotates against and place.Carrier head provides controlled on substrate System load, with by described substrate backup to polishing pad.Polishing fluid (such as, having the slurry (slurry) of abrasive grain) is supplied Surface to polishing pad.
One of chemically mechanical polishing has a problem in that whether determination glossing completes, i.e. whether substrate layer planarizes To desired flatness or thickness, or when remove the material of desired amount.Pulp components, polishing pad condition, polishing pad with The change of load on relative velocity between substrate, the original depth of substrate layer and substrate may cause material removal rate Change.These changes cause the change reaching the time required for polishing end point.Therefore, when only polishing end point being defined as polishing Between function may cause in wafer inhomogeneities between inhomogeneities or wafer.
In some systems, during for example being polished by polishing pad, (in-situ) detection substrate in situ.A kind of prison Survey technology is used for inducing the vortex flow (eddy current) in conductive layer, and as conductive layer is removed to detect vortex flow Change.
Content of the invention
In some integrated circuit fabrication process, after patterned insulating barrier exposes, polishing continues, for example, In order to reduce the degree of depth of conductor wire in groove.When groove has target depth, the polishing reliably stopping substrate will be institute's phase Hope.But, due to the little line width of groove, wire induces vortex flow and is probably difficulty.Therefore, conventional vortex flow Monitoring technology may be not enough to reliably determine the degree of depth of groove, and therefore possibly reliably cannot have target depth at groove When stop polishing.
But, alternative is bound to conductive loop in polished substrate.Magnetic field can be described by conductive loop Inducing current in loop.Relative to the voltage source generating magnetic field, conductive loop generally acts as impedance, and conduction is depended in described impedance The degree of depth of material.This permits generating the signal of the degree of depth of the conductive material depending in groove.
On the one hand, a kind of method chemically-mechanicapolish polishing substrate comprises the following steps：Have with many in manufacture During the integrated circuit of the layer of individual conductive interconnection part, the layer of polishing substrate to provide the layer of integrated circuit, the layer of wherein said substrate Including conductor wire is to provide conductive interconnection part.The layer of substrate includes the conductive loop closed, and the conductive loop of described closing is by ditch Conductive material in groove is formed.The degree of depth of the conductive material in use induction monitoring system monitoring groove, and generate signal.Prison Survey step to include：Generate off and on by the magnetic field of the conductive loop of described closing.The value being in progress in time is extracted from signal Sequence, described value sequence represents the degree of depth of the conductive material being in progress in time.By determining the deep of conductive material from value sequence Degree has reached target depth to detect polishing end point；Or adjust based on value sequence and applied during the polishing of layer by carrier head At least one pressure to substrate so that the zones of different on substrate is compared does not has this type of to adjust closer to identical polishing eventually Point.
On the other hand, a kind of method chemically-mechanicapolish polishing substrate comprises the following steps：Manufacture have with During the integrated circuit of the layer of multiple conductive interconnection parts, the layer of polishing substrate is to provide the layer of integrated circuit.The layer bag of described substrate Include conductor wire providing conductive interconnection part, and the layer of described substrate includes the conductive loop closed, the conducting ring of described closing Conductive material in route groove is formed.Induction monitoring system is used to monitor the degree of depth of the conductive material in groove, and raw Become signal.Monitoring step includes：Generate magnetic field from core, described core have be substantially perpendicular to the layer of described substrate and orient point Fork (prong).Magnetic field is off and on by the conductive loop of described closing.The breadth wise dimension of the conductive loop of described closing is about institute State 1 to 2 times of breadth wise dimension of bifurcated.
On the other hand, computer program or the polishing system of these methods of execution are provided.
On the other hand, for substrate in the fabrication of integrated circuits, there is the layer with multiple conductive interconnection parts.Institute State substrate to include：Semiconductor body；Dielectric layer, is arranged on above described semiconductor body；The conductor wire of multiple conductive materials, It is arranged in the first groove in described dielectric layer to provide conductive interconnection part；And the conductive loop of the closing of conductive material Structure, is arranged in the second groove in described dielectric layer.The conductive loop structure of described closing includes through conductive region Multiple openings, to provide the conductive loop of multiple electric connection.The conductive loop of described closing is not electrically connected to any leading Electric wire.
On the other hand, for substrate in the fabrication of integrated circuits, there is the layer with multiple conductive interconnection parts.Institute State substrate to include：Semiconductor body；It is arranged on above described semiconductor body；First group of multiple conductor wire of conductive material, if Put in the first groove in described first dielectric layer to provide at least some in conductive interconnection part；The first of conductive material The conductive loop structure closed, is arranged in the second groove in described first dielectric layer；Second dielectric layer, is arranged on institute State above the first dielectric layer；Second group of multiple conductor wire of conductive material, are arranged on the 3rd in described second dielectric layer To provide at least some in conductive interconnection part in groove；And the conductive loop structure of the second closing of conductive material, arrange In the 4th groove in described second dielectric layer, the width of the wherein said second conductive loop structure closed is more than described The width of the first conductive loop structure closed.
Specific implementation mode can include one or more of advantages below.The degree of depth of conductive material in the trench (or conductance) can be sensed, described conductive material such as metal, such as, and copper.When groove has target depth, can be more reliable Ground stops polishing, and can perform the closed-loop control to carrier head pressure to drive to uniform metal thickness and electrical conductivity. Therefore, whole manufacturing process can have the yield of improvement.
The details of one or more implementation is set forth in appended the accompanying drawings and the description below.By specification, attached Figure, and pass through claims, other aspects, features and advantages will be apparent from.
Brief description
Fig. 1 is the schematic partial section side view of chemical mechanical polishing stations, and described chemical mechanical polishing stations includes sensing Monitoring system.
Fig. 2 is the schematic circuit of the some of induction monitoring system.
Fig. 3 is the schematic plan of the platform of chemical mechanical polishing stations.
Fig. 4 A is the schematic plan of substrate.
Fig. 4 B is the perspective schematic view of the conductive loop on substrate.
Fig. 5 is the schematic cross sectional view of the substrate for example obtaining along the line 5 of Fig. 4 A.
Fig. 6 is the schematic cross sectional view of the substrate with multiple layers.
Fig. 7 is the schematic plan of multiple conductive loop structure.
Fig. 8 illustrates the signal from induction monitoring system.
Fig. 9 illustrates the value sequence being generated by induction monitoring system.
Figure 10 illustrates generated, two value sequences for two regions on substrate by induction monitoring system.
Figure 11 A-Figure 11 E schematically illustrates the polishing of substrate.
Identical reference symbol in each accompanying drawing indicates identical element.
Detailed description of the invention
CMP system can use induction monitoring system to detect the degree of depth of the conductive material in the groove on substrate.Described Measurement can be used for stopping polishing when groove has target depth, or for adjusting the processing parameter of glossing in real time.Example Such as the pressure on base plate carrying head adjustable substrate backside so that the groove in the zones of different of substrate has after polishing There is the substantially the same degree of depth.
The example of the polishing station 20 of the chemical-mechanical polisher that Fig. 1 illustrates.Polishing station 20 includes rotatable disc-shaped platform 24, wherein polishing pad 30 is positioned on described rotatable disc-shaped platform.Platform 24 is operable to rotate around axle 25.For example, motor 22 Pivotable drive axle 28 carrys out rotation platform 24.Polishing pad 30 can be the two-layer throwing with outer layer 34 and softer back sheet 32 Light pad.
Polishing station 22 can include supply port or combined type supply-rinse arm 39, with by polishing fluid 38 (such as, slurry) point It is fitted on polishing pad 30.Polishing station 22 can include the pad conditioner equipment with adjustment disk, to maintain the condition of polishing pad.
Carrier head 70 is operable to hold substrate 100 against polishing pad 30.Carrier head 70 (for example, revolves from supporting construction 72 Turn bin or track) suspention, and described carrier head is connected to carrier head electric rotating machine 76 by drive shaft 74 so that described hold Carrier head can rotate around axle 71.Optionally, carrier head 70 can for example laterally vibrate on the slide block rotating on bin or track；Or By rotating the whirling vibration of bin itself.In operation, around Platform center axle 25 rotation platform, and around the center of carrier head Axle 71 rotates carrier head and laterally translates carrier head across the top surface of polishing pad 30.In the case of having multiple carrier head, often One carrier head 70 can have the control of the independence to its burnishing parameters, and for example, each carrier head can independently controlled apply Pressure to each corresponding substrate.
Carrier head 70 can include flexible partition (flexible membrane) 80, and described flexible partition 80 has for connecing Touch substrate assembly surface and the different region for different pressure being applied on substrate 100 of the dorsal part of substrate 100 (for example, different radial zones) can pressurised chamber (pressurizable chamber) 82.Described carrier head may also comprise For holding the retaining ring 84 of substrate.In some implementations, retaining ring 84 can include the part of highly conductive, for example, institute State load-carrying ring and can include contacting the thin bottom parts of plastics 86 of polishing pad and thick top current-carrying part 88.In some realization sides In formula, the part of described highly conductive is metal, for example, and the metal identical with polished layer, for example, copper or cobalt.
Groove 26 is formed in platform 24, and optionally, thin section 36 may be formed in the polishing pad 30 covering groove 26.Recessed Groove 26 and thin pad section 36 may be positioned such that the translation position regardless of carrier head, during the part that platform rotates, recessed Groove 26 and thin pad section 36 all pass through in the lower section of substrate 10.Assume that polishing pad 30 is two-layer pad, then can be by removing backing The part of layer 32 builds thin pad section 36.Thin section is optionally optical transmission, for example, if (in-situ) light in situ Hygienic monitoring on hands of childhood system is integrated in platform 24.
In-situ monitoring system 40 generates the time dependent value sequence of the thickness of the conductive trench depending on substrate 10. Specifically, in-situ monitoring system 40 can be induction monitoring system.In operation, polishing station 22 uses monitoring system 40 with really Determine when groove is polished to target depth.
Induction monitoring system 40 can include the inductive pick-up 42 in the groove 26 being arranged in platform.Sensor 26 is permissible Including the magnetic core being positioned at least partially in groove 26 and at least one coil 46 being wound around around core 44.Drive and sensing electricity Road 48 is electrically connected to coil 46.Drive and sensing circuit 48 generates the signal that can be sent to controller 90.Although being schematically shown as Platform 24 is outside, but drives and may be installed in platform 24 with some or all in sensing circuit 48.Rotary coupling device 29 The parts that can be used for being electrically connected to the parts (for example, coil 46) in rotatable platform platform exterior (for example, drive and feel Slowdown monitoring circuit 48).
Core 44 can include the bifurcated that two (see Fig. 1) or three (see Fig. 2) extend parallel to from back 52.Only there is one The implementation of bifurcated (and not having back) is also possible.
With reference to Fig. 2, circuit 48 applies AC (exchange) electric current to coil 46, and these are between two pole 54a and 54b of core 44 Generate magnetic field 51.In operation, the part in magnetic field 51 extends in substrate 100.
Fig. 2 illustrates the example driving with sensing circuit 48.Circuit 48 includes the capacitor 60 being connected in parallel with coil 46.Line Circle 46 can form LC resonance trough (resonant tank) together with capacitor 60.In operation, current generator 62 (for example, base Current generator in marginal oscillator (marginal oscillator) circuit) with by coil 46 (there is inductance L) and electric capacity The resonant frequency drive system of the LC groove circuit that device 60 (having electric capacity C) is formed.Current generator 62 can be designed to sine The peak to peak amplitude preservation of vibration is at steady state value.There is amplitude V0Depend on the time voltage use rectifier 64 carry out rectification, And provide to feedback circuit 66.Feedback circuit 66 determines the driving electric current being used for current generator 62 to keep voltage V0Shake Constant.Marginal oscillator circuit and feedback circuit are retouched further in U.S. Patent No. No. 4,000,458 and No. 7,112,960 Stating, these patents are incorporated herein by.
When the conductive loop on magnetic field 56 is by substrate, magnetic field 56 generates electric current in described loop.Which increase Effect impedance, therefore adds the driving electric current needed for current generator 62 to keep voltage V0Amplitude constant.Effective impedance Increase degree depends on the electric conductivity of loop, and described electric conductivity depends on the degree of depth limiting the conductive material in the groove of loop. In brief, the degree of depth linear correlation of conductive material in the power dissipation of conductive loop and groove.Therefore, by current generator 62 The electric current that drives generating provides the measurement of the degree of depth to the conductive material in groove.
Other configurations are possible for driving with sensing circuit 48.For example, driving separately and sensing coil can be around cores It is wound around, described driving coil can be driven with constant frequency, and from the amplitude of electric current of described sensing coil or phase place (phase For driving oscillator) can be used for signal.
Returning to Fig. 1, in some implementations, polishing station 20 includes temperature sensor 92 to monitor the temperature in polishing station The temperature of the parts in the parts/polishing station of degree or polishing station.Although being schematically shown as in FIG being located to monitor polishing pad 30 And/or the temperature of slurry 38 on pad 30, but temperature sensor 92 can be positioned in carrier head to measure the temperature of substrate 100 Degree.Temperature sensor directly can contact (that is, touch sensor) with the surface being exposed of polishing pad or substrate 10, or temperature Degree sensor can be noncontacting proximity sensor (for example, infrared ray sensor).(multiple) temperature monitored can be used for adjusting Measurement from induction monitoring system.
In some implementations, polissoir includes the polishing station adding.For example, polissoir can include two or Three polishing stations.For example, polissoir can include having the first polishing station of vortex flow monitoring system and have sensing prison Second polishing station of examining system.
For example, in operation, the polishing (bulk of the body block to the conductive layer on substrate can be performed at the first polishing station Polishing), and can stop when barrier layer or patterned dielectric layer are exposed polishing.Transmitted with metacoxal plate To the second polishing station, and this substrate can be polished until groove reaches target depth.
Fig. 3 illustrates the top view of platform 24.As platform 24 rotates, sensor 42 scans below substrate 100.By with CF generates measurement to the sample of signal from circuit 48, circuit 48 with the sequence in the sampling region 94 across substrate 100.Right Scanning in each time, optional or combination is in the measurement at one or more of sampling region 94 place.Therefore, through repeatedly sweeping Plunderring, selected or combination measurement provides time dependent value sequence.Additionally, can be not located under substrate 10 at sensor The position of side performs wafer outer (off-wafer) measurement.
Polishing station 20 may also comprise position sensor 96 (such as, optical interrupter) and when exists to sense inductive pick-up 42 Below substrate 100 and when inductive pick-up 42 leaves substrate.For example, position sensor 96 may be mounted at and carrier head 70 phase To fixed position at.Mark 98 can be attached to the periphery of platform 24.The length of the point of attachment and mark 98 is selected so that Described mark can signal position sensor 96 when sensor 42 sweeping below substrate 10.
Alternatively, polishing station 20 can include encoder to determine the Angle Position of platform 24.Inductive pick-up can be with putting down The rotating every time and scan below substrate of platform.
Controller 90 (for example, general programmable digital computer) receives the value sequence from induction monitoring system.Due to Sensor 42 scans with being rotated in every time below substrate of platform, therefore in situ and on the basis of continuously in real time (for Each platform rotates to be once) accumulate the information with regard to gash depth.Controller 90 can be programmed to substantially cover thin at substrate (as determined by position sensor) to the measurement sampling from monitoring system during section 36.With polishing progress, conductive layer Thickness changes, and institute's sampled signal time to time change.During polishing, the measurement from monitoring system can be displayed in output On device, can visually monitor the progress of polishing operation with the operator of permitting apparatus.
Additionally, controller 90 can be programmed in the future self-induction current monitoring system 40 and each below substrate Scan both measurements and be divided into multiple sampling region, calculate the radial position in each sampling region, and by these measurement classification Radially scope.
Controller 90 can be connected to the pressure mechanism of the pressure that control is applied by carrier head 70, may be connected to for controlling The carrier head electric rotating machine 76 of the carrier head speed of rotation, may be connected to the platform electric rotating machine for controlling the platform speed of rotation 21, or may be connected to for controlling the slurry distribution system 39 supplying the paste compound to polishing pad.Specifically, as hereafter In discussed further, after measurement is categorized into radial extension, can in real time the information with regard to gash depth be fed to In closed loop controller, in order to the polish pressure distribution that periodically or continuously modification of property ground is applied by carrier head.
Fig. 4 A and Fig. 4 B illustrates substrate 100, and described substrate 100 has the conductive loop 102 of closing.It is said that in general, substrate To have the conductive loop 102 of multiple closing, and these conductive loops closed can be evenly distributed across substrate.Each is led Electricity loop 102 does not needs to be connected to other interconnection winding displacement (wiring) in a substrate；Described conductive loop can be on substrate Stand alone type (free-standing) feature.Even if additionally, after whole integrated circuit completes, conductive loop 102 is also permissible It is the freestanding characteristics in integrated circuit, i.e. described conductive loop does not needs to be connected to other interconnection winding displacements, and is not collection Become the part of any functional circuit of circuit.
Depending on used metal level, conductive loop can have the line width W (seeing Fig. 5) of about 0.5um to 10um. Conductive loop 102 has the degree of depth identical with other interconnection winding displacements in layer.
In some implementations, close conductive loop 102 and surround tube core 104.For example, the conductive loop of closing can position In score line region 106 between tube core 104.In some implementations, the conductive loop 102 of closing is positioned at score line district In territory 106, but do not surround tube core 104.Alternatively, the conductive loop 102 of closing can be located in tube core.In this case, extremely By any circuit being used by integrated circuit but the electric connection being positioned at loop 102 is passed through needing in another conductive layer The conductor wire passing through above or below loop 102 carries out connecting up (route).
As shown in Figure 4 A, single wafer 100 is usual is made up of multiple tube cores 104.In some implementations, each Tube core 104 all has the conductive loop 102 being associated.For example, each tube core 104 can be enclosed by the conductive loop of himself Around, conductive loop can be located in each tube core 104, or conductive loop may be positioned to and each pipe in score line region Core 104 is adjacent.Each tube core can have multiple conductive loop, and these conductive loops can have identical or different Size.Finally, wafer is diced to separate independent tube core.
Although loop is schematically shown as being about rectangle by Fig. 4 A and Fig. 4 B, but this is optional；Loop can be any Simply (that is, non-self intersection) shape, such as, n limit simple polygon.Loop also can have one or more bending section.
Signal strength signal intensity from induction monitoring system 40 will depend upon which conductive loop 102 relative to sensor the 42nd, particularly Size relative to the horizontal scale of bifurcated 50 and the distance away from core 44 for the loop 102.By the power dissipation of conductive loop by Determine through the magnetic flux of loop and the resistance of described loop.On the one hand, conductive loop is less, and fewer magnetic flux will pass through Loop, and signal will be more weak.On the other hand, if conductive loop is excessive, then one from extremely occurs magnetic field line is by past Back bending is bent to another pole, is simultaneously held in the region of described loop so that the total magnetic flux again by described loop reduces. In addition, the resistance of loop increases linearly with the total length of loop.This causes power dissipation, and therefore for having certain size Sensor cause more weak signal.It is said that in general, the size of loop should one in the bifurcated 50 of substantially matching core 44 Size.For example, the breadth wise dimension of one of the bifurcated 50 that breadth wise dimension L of conductive loop 102 should be about in core 44 1-2 times.
Simultaneously manufacture the conductive loop 102 of closing with reference to other conductive features in Fig. 5, with conductive layer.Specifically, For example by being etched in the dielectric layer 112 depositing on a wafer 110 formation groove.Dielectric layer 112 can be layer (example Such as low k layer, cover layer etc.) lamination.Thin barrier layer 114 can be deposited to coat the top of the inside of groove and dielectric layer 112 Surface.Conductive material 116 can be deposited subsequently to fill groove；The top surface of described conductive material also dielectric layer 112.Lead Electric material can be metal, for example, and copper or cobalt.Barrier layer can be titanium, titanium nitride or tantalum nitride.
Subsequently, conductive material 116 polished fall so that dielectric layer 114 top surface expose.Just at this moment, substrate reaches To the state shown in Fig. 4 A.The polishing of substrate 100 can continue, until the conductive material 116 in groove reaches target depth is Only.During this part of polishing step, the degree of depth of induction monitoring system monitoring groove can be used.Can be used for making dielectric layer The polishing carrying out for reducing gash depth is performed on the identical platform that the top surface of 114 exposes.
Owing to manufacturing conductive loop, therefore described conductive loop in the technique identical with other conductive components in layer The groove of 102 should have the width identical with the groove in the tube core of the Circuits System (circuitry) by providing integrated circuit Degree.Therefore, the thickness that can reasonably depend on other conductive features of monitoring of the thickness of conductive loop 102 is monitored.
In many substrates, there are multiple layers with the metallicity being formed on substrate.These layers be sometimes referred to as M1, M2 etc., wherein M1 is closest to the metal level of semiconductor wafer.With reference to Fig. 6, when polishing the substrate with multiple layers, lead Electricity loop may be formed in each layer.For example, conductive loop 102a, 102b, 102c can be respectively formed at metal level M1, M2, In M3.In some implementations, the conductive loop in two different layers is substantial alignment, for example, and conductive loop 102b is in the surface of conductive loop 102a.
One is potential problematically, the measured signal of conductive loop contribution in lower level, and therefore at prison As noise source when surveying the gash depth in outermost layer.In some implementations, layer is more remote away from substrate, and conductive loop is more Wide.For example, the conductive loop 102c in M3 is than the conductive loop 102b width in M2, and the conductive loop 102b in M2 is comparable Conductive loop 102a width in M1.By contrast, the line providing the conductive interconnection part of integrated circuit can have in each layer Identical width.
Due to the width of the increase of loop, described loop has relatively low resistance.As result, the ring in each layer The signal strength signal intensity on road becomes strong continuously.For example, the comparable letter from conductive loop 102b of signal strength signal intensity from conductive loop 102c Number intensity is strong, and strong than the signal strength signal intensity from conductive loop 102a from the signal strength signal intensity of conductive loop 102b.Due to letter Number intensity increases with each floor, and the noise that therefore conductive loop in lower level causes is for outermost ditch groove depth The signal to noise ratio (signal to noise ratio) of the noise source during the reliability of the monitoring of degree has minor impact.
Optionally, each conductive loop can be electrically connected to the conductive loop in next lower level.For example, conduct electricity The be electrically connected to conductive loop 102b of loop 102c, and conductive loop 102b can be electrically connected to conductive loop 102a.
With reference to Fig. 7, in some implementations, single conductive loop 102 is replaced by many loop structures 122.Structure 122 has Have the multiple openings 126 being separated by conductor wire 128.Opening 126 can be evenly spaced apart.In some implementations, by Metal loop wire inserts dielectric slit (slit) and forms structure 122.The composite construction of many loop structures 122 can be designed to The Primary Component groove of part of the integrated circuit having and being formed in tube core 104 or the CMP behavior of cross tie part close to or class As CMP behavior.
The area being covered by opening 126 can be chosen relative to the ratio of the area being covered by line 102 to mate adjacent tubes The pattern density of the device pattern in core.For example, if the device pattern in adjacent tube core has the pattern density of 50%, then The ratio to the gross area for the area being covered by line can be 0.5.This permits metal wire and has and the figure in tube core for CMP operation The similar reaction of case.
Return to Fig. 1 to Fig. 3, as described above, when magnetic field 56 passes through the conductive loop 102 on substrate 100, magnetic field 56 Generating electric current in loop 102, this causes the change of the signal strength signal intensity from induction monitoring system.But, due to sensor 42 Just moving relative to substrate, and being distributed loop across substrate, therefore sensor 42 will be located in not having on the region of loop sometimes Side, and may only intermittently scan on transannular road 102.As result, the signal from induction monitoring system will be only intermittent Deposit the effect of self loop.
Fig. 8 illustrates the chart of the sample signal 130 from the single sweep across substrate 100 for the sensor 42.In this chart, Transverse axis represents the distance away from substrate center, and the longitudinal axis represents signal strength signal intensity (with arbitrary unit).Signal 130 includes low signal intensity Initial part 132.Part 132 can represent when the sensor not time below carrier head, therefore has nothing to generate signal. It is the part 134 of msp signal intensity after this part.Part 134 can represent when time below retaining ring for the sensor, Therefore the metal parts in carrier head or retaining ring can generate some signals.
Followed by part 136 subsequently, described part 136 has significantly " noise ", along with being permitted of being separated by trough 142 Many single spikes 140.It is said that in general, in part 136, signal strength signal intensity does not drop into less than minimum of a value 144.It is not only restricted to appoint What particular theory, spike 140 can represent when sensor 42 is positioned at the moment below loop, and trough 142 can represent and works as sensor It is positioned at the moment below the region without loop.
Due to the degree of depth of the signal strength expression groove of spike 140, therefore described signal demand is treated unrelated to remove Background signal and noise.Controller 90 can be performed signal transacting.
It is said that in general, selection signal window.Described signal window can represent radial direction just on substrate or substrate for the sensor The time portion of sector scanning.Optionally, initially signal can not be conducting ring by substrate through high-pass filter to remove DC (direct current) part of the signal that road generates.The signal strength signal intensity when sensor is not less than carrier head for the measurement is to generate reference value. Deduct this reference value from the signal that when sensor is less than carrier head (for example, during signal window) records.This can compensate for To the signal drift for example changing due to chemistry or thermal environment and causing in the polishing operation of substrate.
In one implementation, the intensity of signal 130 is made averagely to generate average signal by whole signal window Value.This mean value can be used as output valve.In place of substrate uniformly and thick and fast dispensing of conductive loop, this technology can be to close Fit.
In another implementation, the multiple single crest 140 in id signal window.Determine each crest 140 Maximum signal.Deduct from the signal strength signal intensity of each crest (floor) signal strength signal intensity (for example, between crest The mean value of valley regions) to generate the set of peak (peak-to-floor) signal value over the ground.Can be to the peak from signal window The set of signal value over the ground is averaging to generate average peak signal value over the ground.Described average peak signal value over the ground can be used as output Value.This technology is applicable to have the signal on sparse crest and smooth ground (for example, wherein with relatively low Density Distribution Conductive loop, and conductive loop is positioned at each tube core).
In another implementation, the multiple single crest 140 in id signal window.Determine each crest 140 Maximum signal.The signal strength signal intensity of the crest in signal window can be averaging to generate average wave peak value.Described averagely Crest signal value can be used as output valve.(for example, wherein often this technology is applicable to have the signal of sparse and uneven crest There is in one tube core various sizes of conductive loop, and conductive loop is with relatively low Density Distribution.
Each of in above-mentioned implementation in implementation, owing to having one for the signal window scanning each time Individual output valve, therefore with polishing progress, this generates the sequence of the value that can be used for end point determination or the control of closed loop polishing speed.
It is to be understood that " crest " can be from relatively low background signal spike upwards, or from higher background signal Downward spike.In the case of the latter, " maximum signal " is actually the minimum point of crest.
Fig. 9 is the exemplary plot of the output valve 150 being generated by induction monitoring system during the polishing to device substrate 100 Table.In this chart, horizontal axis representing time, and the longitudinal axis represents output valve.In some implementations, output valve can be changed, For example, look-up table (look-up table), the one-tenth-value thickness 1/10 of offer value 150 are provided.
In some implementations, when the currency of the second spectral signature reaches desired value 152, (call) can be called eventually Point.Desired value 152 represents the output of the induction monitoring system when groove has target depth.
In some implementations, for example use strong fitting a straight line (robust line fit) by function 154 matching To output valve 150.Function 154 can be used for determining the polishing end point moment.In some implementations, described function is the line of time Property function.In some implementations, the moment that function 154 is equal to desired value 152 provides the terminal moment 156.
Figure 10 is the example chart of the output valve for two zoness of different on substrate 100.For example, induction monitoring system 40 first areas that can follow the tracks of the marginal portion being located towards substrate 100 and secondth district at center being located towards substrate 100 Territory.The first output valve sequence 160 can be measured from the first area of substrate 100, and can survey from the secondth district of substrate 100 similarly Flow control two output valve sequence 162.
First function 164 (for example, the first straight line) can matching to the first output valve sequence 160, and the second function 166 (example Such as the second straight line) can matching to the second output valve sequence 162.First function 164 and the second function 166 can be used for substrate 10 The adjustment of polishing speed.
During polishing, the first function of the first area for substrate 100 utilization is utilized to be used for the second of substrate 100 Second function in region, carries out the endpoint calculation of estimation based on desired value 168 at moment TC.Desired value 168 represents works as ditch When groove has target depth, the output of induction monitoring system.If during for terminal estimated by first area and second area Carve T1 with T2 different (if or the numerical value of the first function and the second function difference at estimated terminal moment 170s), then The polishing speed of at least one in adjustable region so that first area is compared with second area does not has this type of more to connect for adjusting The closely identical terminal moment.For example, if first area will reach desired value 168 before second area, then second can be increased The polishing speed (being illustrated by straight line 172) in region so that second area will reach in the moment substantially the same with second area Desired value 168.In some implementations, the Part I of substrate and the polishing speed of Part II are adjusted so that The two part is reached home simultaneously.Alternatively, the polishing speed of Part I or Part II can only be adjusted.
Output valve sequence provides output signal.In some implementations, before fitting function, may filter that output signal. For example, in some cases, output signal presents the periodic swinging of rule.Being not only restricted to any specific theory, this may It is owing to platform is from the orientation of the skew once rotating to another rotary plate.In order to compensate this periodic swinging, below calculate Method can be applicable to output valve sequence：
Treated signal=sqrt [signal (t) * signal (t)+signal (t-Δ t) * signal (t-Δ t)]
Wherein Δ t is 1/4th of cycle of oscillation.Can be for example by performing the Fourier transform of output signal and determining Peak frequencies intensity determines cycle of oscillation.
Initially, before being polished, in the presence of there is no any substrate, current generator 62 can be tuned (tune) resonant frequency to lc circuit.This resonant frequency causes the peak swing of output signal.
As illustrated in figure 11A, for polishing operation, substrate 100 is placed with and contacts with polishing pad 30.Substrate 100 has Conductive layer 116, described conductive layer 116 covers the patterned dielectric layer 112 being positioned at lower section.Owing to before polishing., leading The body block (bulk) of electric layer 116 is relative thick and continuous print when initial, and therefore it has low-resistivity.As result, carry out self-induction The magnetic field that should monitor system 40 can generate vortex flow in the conductive layer.Described vortex flow makes metal level serve as source of resistance；This permits The thickness of monitoring substrate during the body block of conductive layer polishes.
With reference to Figure 11 B, as substrate 100 is polished, the body block parts thinner of conductive layer 116.As conductive layer 116 becomes Thin, its sheet resistivity (sheet resistivity) increases, and vortex flow in the metal layer suppressed (dampen). In some implementations, it is retained in when induction monitoring system or different monitoring systems determine the conductive layer of predetermined thickness T When being positioned above the layer of lower section, substrate can be moved to different platforms.
With reference to Figure 11 C, the body block part of final conductive layer 116 is removed so that barrier layer 114 exposes and by conductive material 116 are retained in the groove between patterned dielectric layer 112, to provide the cross tie part 108 of device and loop conductor 102. In some implementations, when induction monitoring system or different monitoring system (for example, optical monitoring system) determine stop When layer exposes, substrate can be moved to different platforms.
With reference to Figure 11 D, polishing continues to remove barrier layer 114, so that the top surface of patterned dielectric layer 112 is sudden and violent Dew.The degree of depth of conductive material 116 in the trench also reduces.In some implementations, when induction monitoring system or different Monitoring system (for example, optical monitoring system) determines barrier layer when exposing, and substrate can move to different platforms.
If substrate is subjected to the body block polishing of conductive layer and both thinnings of dielectric layer on identical platform, then After the exposure of any one in the top surface of barrier layer 114 or dielectric layer 112, the pattern of induction monitoring system 40 is from body Block thickness monitor pattern is switched to gash depth monitoring pattern.It is said that in general, need detection extraction from overall signal to be derived from Crest in the signal of conductive loop is to generate value sequence.By contrast, in body block thickness monitor pattern, there is no this type of crest It is expected or extracts, and primary signal can be able to be averaging to monitor body block conductive layer thickness.
With reference to Figure 11 E, when induction monitoring system 40 is in gash depth monitoring pattern, polish substrate.This makes dielectric The thinning of both layers 112, and reduce the degree of depth of conductive interconnection part 116' in groove.As discussed above, carry out self-induction prison The signal of examining system 40 can be used for detecting polishing end point, and stop polishing, and/or modification base when groove reaches target depth D The polishing speed of plate different piece is to improve polishing uniformity.
In some implementations, monitoring the polishing of body block from use induction monitoring system different, polishing station includes separately Vortex flow monitoring system.In some implementations, polishing station includes optical monitoring system.Described optical monitoring system can be used Exposure in detection barrier layer or patterned dielectric layer.Inspection to barrier layer or the exposure of patterned dielectric layer Survey and can be used for triggering the monitoring utilizing induction monitoring system to carry out, or be used for triggering induction monitoring system from body block thickness monitor mould Formula is switched to gash depth monitoring pattern.
In some implementations, after polishing, substrate stands to polish (buffing) step.
Induction monitoring system can be used in various polishing system.Polishing pad or carrier head or both of which may move to carry For the relative motion between polished surface and substrate.Polishing pad can be affixed to the circle (or certain other shape) of platform Pad, the band extending between supply and extraction roller or continuous print belt.Polishing pad can be attached to platform, at repeatedly polishing operation Between be incrementally advanced above platform, or during polishing platform continuous over drive.Pad during polishing and can fix It to platform, or during polishing, between platform and polishing pad, is likely to be of FDB (fluid bearing).Polishing Pad can be standard (for example, the polyurethane with or without filler) coarse pad, cushion or fixing abrasive pad.
Although additionally, described above is absorbed in the monitoring during polishing, but these technology being applied to in-line arrangement (in-line) monitoring system will be also possible.For example, fixed sensor can be positioned on the polissoir before polishing station In section, for example, in factor interface or be attached to because of in the module of sub-interface (factor interface).It is responsible for conveying The robot movable substrate of substrate is through sensor.Alternatively, substrate can be positioned on the support in factor interface or attached It is connected to because of in the module of sub-interface, and when substrate stands, actuator can across substrate movable sensor.In any one situation Under, the measurement sequence obtaining across substrate can be equal to the single sweep operation across substrate for the sensor of in-situ monitoring system, and can Process measurement sequence as described above to generate the measurement of gash depth.
In Fundamental Digital Circuit, or (disclosed structure in the description can be included at computer software, firmware or hardware Device and equivalent structures thereof) in, or realize embodiment of the disclosure and described in specification in above-mentioned every combination Repertoire operation.Embodiment of the disclosure and can be embodied as one or more of computer program, i.e. be visibly concrete Change the one or more meters (for example, in non-transient state machinable medium or in transmitting signal) in information carrier Calculation machine program, described computer program is for being performed or controlled by data processing equipment the operation of data processing equipment, described number According to processing equipment for example, programmable processor, computer or multiple processor or computer.Computer program (also referred to as program, Software, software application or coding) can use any type of programming language (include compiling or explain (interpreted) language) to write Write, and computer computer program can be disposed in any form, including be deployed as stand-alone program or be deployed as module, assembly, Subroutine (subroutine) or applicable other unit using in a computing environment.Computer program not necessarily corresponds to literary composition Part.Program is storable in file preserving in the part of other programs or data, is stored in the list being exclusively used in considered program In individual file or be stored in multiple cooperation file in (for example, store the some of one or more module, subprogram or code File).Computer program can be deployed to perform at a computer or on the multiple computers be positioned at a place, or Person is distributed and by interconnection of telecommunication network across multiple places.
The one or more programmable processors performing one or more computer program can be performed this specification Described in technique and logic flow, in order to by input data and generate output and perform function.Also can be by dedicated logic circuit Perform technique and logic flow, and equipment also can be embodied as special logic, described special logic for example, FPGA (field-programmable Gate array) or ASIC (special IC).
Have been described for multiple embodiments of the present invention.It is to be understood that various modification can be carried out without departing from this Bright spirit and scope.Therefore, other embodiments are within the scope of the appended claims.

Claims (15)

1. the method chemically-mechanicapolish polishing substrate, said method comprising the steps of：
When manufacturing the integrated circuit having with the layer of multiple conductive interconnection parts, the layer of polishing substrate is to provide described integrated electricity The described floor on road, the described layer of wherein said substrate include conductor wire providing described conductive interconnection part, and wherein said base The described layer of plate includes the conductive loop closed, and the conductive loop of described closing is formed by the conductive material in groove；
Use induction monitoring system to monitor the degree of depth of the described conductive material in described groove, and generate signal, Qi Zhongsuo State monitoring step and include generating the magnetic field of the conductive loop by described closing off and on；And
The value sequence being in progress in time from signal extraction, described value sequence represents the degree of depth that described conductive material is in progress in time； And
At least one step below：
Reach target depth by the degree of depth determining described conductive material from described value sequence and detect polishing end point, or
Adjust based on described value sequence and applied during the polishing of described layer at least one pressure of described substrate by carrier head Power so that the zones of different on described substrate is compared does not has this type of to adjust closer to the identical terminal moment.
2. the method for claim 1, the step wherein extracting described value sequence comprises the following steps：When the punching of described magnetic field When hitting this substrate, the signal of a period is averaging with from described value sequence generation value.
3. the method for claim 1, the step wherein extracting described value sequence comprises the following steps：When the punching of described magnetic field When hitting described substrate, identify the crest in the signal of a period；And determine the signal strength signal intensity of each crest.
4. method as claimed in claim 3, the step wherein extracting described value sequence comprises the following steps：To described crest Signal strength signal intensity is averaging with from described value sequence generation value.
5. the method for claim 1, the conductive loop of wherein said closing is not electrically connected in described conductor wire Arbitrary conductor wire.
6. the method for claim 1, said method comprising the steps of：Polishing groove in described conductive material it Before, remove the overlying strata of described conductive material, so that the surface that groove is formed at dielectric layer therein exposes.
7. method as claimed in claim 6, said method comprising the steps of：By described induction monitoring system from body block thickness Monitoring pattern switches to gash depth monitoring pattern.
8. method as claimed in claim 7, said method comprising the steps of：Change by the amplitude of the described value sequence of detection The change changing speed determines the removing of described overlying strata.
9. the method for claim 1, said method comprising the steps of：Filter described value sequence to remove the week of rule Phase property vibrates.
10. a computer program on non-Transient calculation machine storage medium for the coding, described computer program can Operation is so that processor performs operation and controls polishing operation, and described operation includes：
From induction monitoring system receipt signal, described signal is generated by the conductive loop of closing off and on by making magnetic field, The conductive loop of described closing is formed by the conductive material in the groove in standing the layer of substrate of polishing；And
The value sequence being in progress in time from described signal extraction, described value sequence represents the deep of the conductive material that is in progress in time Degree；And
At least one step below：
Reach target depth by the degree of depth determining described conductive material from described value sequence and detect polishing end point, or
Make based on described value sequence by carrier head when applying extremely described base during described polishing station is to the polishing of described layer At least one pressure of plate is adjusted so that the zones of different on described substrate is compared does not has this type of to adjust closer to identical end The point moment.
11. computer programs as claimed in claim 10, the step wherein extracting described value sequence comprises the following steps： When described substrate is impacted in described magnetic field, the signal of a period is averaging with from described value sequence generation value.
12. computer programs as claimed in claim 10, the step wherein extracting described value sequence comprises the following steps： When impacting described substrate in described magnetic field, identify the crest in the signal of a period；And determine that the signal of each crest is strong Degree.
13. computer programs as claimed in claim 12, the step wherein extracting described value sequence comprises the following steps： The signal strength signal intensity of described crest is averaging with from described value sequence generation value.
14. computer programs as claimed in claim 12, the step wherein extracting described value sequence comprises the following steps： Determine the reference signal intensity of described period；And from the signal strength signal intensity of described crest, deduct described reference signal intensity think Each crest generates signal difference.
15. 1 kinds of equipment for chemically mechanical polishing, described equipment includes：
Platform, described platform has the surface for supporting polishing pad；
Carrier head, described carrier head is used for holding substrate so that the described polishing pad of layer contact on described substrate；
Inductive pick-up, described inductive pick-up is for monitoring the groove in the described layer on described substrate by generating magnetic field In the degree of depth of conductive material, described magnetic field is off and on by the conductive loop of the closing in the described layer of described substrate；And
Controller, described controller is configured to from described induction monitoring system receipt signal, and from described signal extraction at any time Between progress value sequence, described value sequence represents the degree of depth of the conductive material in the groove in described layer, and described conductive material carries For the conductive loop of described closing, described controller is configured to perform at least one operation following：By from described value sequence Determine that the degree of depth of conductive material has reached target depth to detect polishing end point；Or adjust described carrying based on described value sequence Head applies at least one pressure of described substrate during the polishing of described layer so that the zones of different on described substrate is compared This type of is not had to adjust closer to the identical terminal moment.
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