CN106373906A - Semiconductor reaction cavity - Google Patents
Semiconductor reaction cavity Download PDFInfo
- Publication number
- CN106373906A CN106373906A CN201510427231.5A CN201510427231A CN106373906A CN 106373906 A CN106373906 A CN 106373906A CN 201510427231 A CN201510427231 A CN 201510427231A CN 106373906 A CN106373906 A CN 106373906A
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- Prior art keywords
- guiding device
- wafer carrier
- inlet pipe
- wafer
- air inlet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Disclosed in the invention is a semiconductor reaction cavity comprising a cavity body, a wafer carrying plate, and a telescopic assembly. An inlet pipe and a wafer inlet-outlet part are arranged at the wall of the cavity body; and the part, arranged inside the cavity body, of the inlet pipe is connected with a guiding device. The wafer carrying plate arranged inside the cavity body is supported by a support post; and the wafer carrying plate that is opposite to and is parallel with the guiding device is used for carrying a wafer. The telescopic assembly is used for driving the wafer carrying plate and/or the guiding device to move, so that the distance between the wafer carrying plate and the guiding device can be adjusted between a first distance and a second distance; and the first distance enables a mechanical arm to be operated in the space between the wafer carrying plate and the guiding device, wherein the second distance is smaller than the first distance. According to the disclosed semiconductor reaction cavity, the space can be left when a wafer is taken or placed and can be compressed during the process, so that the utilization rate and the process rate of the process gas can be improved.
Description
Technical field
A kind of the present invention relates to semiconductor production and manufacture field, more particularly, it relates to quasiconductor reaction chamber.
Background technology
Semiconductor equipment species is various, including polytype machinery such as polissoir, developing apparatus, etching apparatus
Equipment, overwhelming majority equipment therein all be unable to do without the reaction chamber that wafer is carried out with PROCESS FOR TREATMENT.Therefore, reaction chamber
Design whether rationally, the effect of technique can be directly affected, and then have influence on the quality of wafer.
, Fig. 1 gives a kind of traditional dry process reaction chamber taking dry process as a example, and this reaction chamber includes chamber
Room body 101, air inlet pipe 102, spray head 103, wafer carrier 104 and support column 105, chamber body
101 have wall, the wall of chamber body 101 is provided with wafer and imports and exports 106.Lower section in chamber body 101
Offer floss hole 107, the end of floss hole 107 is connected to flow control meter 108 and vacuum pump 109 respectively.Its
In, the process gas needed for dry process is entered by air inlet pipe 102, and is sprayed to crystal column surface by spray head 103,
Wafer carrier 104 is used for carrying wafer, and wafer carrier 104 is supported by support column 105.Wafer is transported by mechanical hand
Send, 106 entrance are imported and exported by wafer or leaves chamber body 101.In addition, by row in chamber body 101
Put the outside aerofluxuss of mouth 107, the speed of aerofluxuss is adjusted by flow control meter 108, and vacuum pump 109 is responsible for evacuation.
In the prior art, air inlet pipe 102 and support column 105 would generally maintain static, spray head 103 and wafer
Leave larger space between load plate 104, so that mechanical hand enters chamber body 101, be removed or placed into wafer.
Generally, the distance between spray head 103 and wafer carrier 104 need to import and export 106 height more than wafer
Degree, just can make mechanical hand smoothly complete operations in chamber body 101.But, so design has one
Defect: because the distance between spray head 103 and wafer carrier 104 are excessive, lead to the utilization rate ten of process gas
Divide low.As shown in the curve arrow in Fig. 1, its reason is, after process gas is sprayed by spray head 103,
In the presence of vacuum pump 109, by the medium position of top from chamber body 101 to chamber body 101
Flow at the side locations of interior lower section, under such flow direction, when wafer is positioned in wafer 104, brilliant
Circle top, the especially top at crystal circle center position, can only touch minimal amount of process gas and with
Reaction, thus lead to a large amount of process gas fully participate in reaction be just discharged chamber body 101, cause
The waste of process gas, this also can have undesirable effect to the efficiency of technique simultaneously.
Content of the invention
Present invention is disclosed a kind of quasiconductor reaction chamber, this reaction chamber can supply machine by vacating space when picking and placeing wafer
Tool handss are operated, and the space that compression is reacted when technique is carried out, thus greatly improving the profit of process gas
With rate and reaction efficiency.
For achieving the above object, the technical scheme is that
A kind of quasiconductor reaction chamber, comprising: chamber body, the wall of chamber body is provided with air inlet pipe and wafer
Import and export, part in chamber body for the air inlet pipe is connected with guiding device；Wafer carrier, wafer carrier is arranged at
In chamber body, held up by support column, wafer carrier is relative with guiding device and parallel, wafer carrier is used for carrying
Wafer；Telescopic component, for driving described wafer carrier and/or guiding device to move, so that described wafer carrier
With the distance between guiding device is adjusted between the first distance and second distance, described first distance makes mechanical hand
Can operate in the space between described wafer carrier and guiding device, described second distance be less than described first away from
From.
Further, telescopic component includes telescoping tube, seal connector and retractable driving device, telescoping tube with stretch
Contracting driving means be arranged in parallel, and telescoping tube is propped up with one end of retractable driving device and is connected to the wall of chamber body,
The other end of telescoping tube and retractable driving device is tightly connected by seal connector and is integrated, and retractable driving device drives
Telescoping tube stretches or shrinks；Wherein, telescopic component is socketed on the outside of air inlet pipe and by being tightly connected by telescoping tube
Part is sealingly connected to air inlet pipe, the wall of air inlet pipe break-through chamber body, and air inlet pipe is not subject to hindering of the wall of chamber body
Gear；Or telescopic component is socketed on the outside of support column by telescoping tube and is sealingly connected to support by seal connector
Post, the wall of support column break-through chamber body, and support column is not subject to stopping of the wall of chamber body.
Further, the area of guiding device is not less than the area of wafer carrier.
Wherein in an embodiment, guiding device be provided with side week side week baffle plate, when guiding device and wafer
When load plate is close to each other, all baffle plate lower ends in side are not less than the upper surface of wafer carrier.
Further, air inlet pipe, guiding device and wafer carrier have identical central shaft.
Alternatively, guiding device is surface plate or spray head.
Further, telescopic component passes through the non-contacting outside being socketed on air inlet pipe or support column of telescoping tube.
Wherein in an embodiment, telescoping tube is corrugated tube.
Wherein in an embodiment, retractable driving device is telescopic cylinder.
Further, quasiconductor reaction chamber is additionally provided with air vent, and passes through inlet chamber.
The quasiconductor reaction chamber that the present invention provides, leaves enough working places to mechanical hand, also significantly simultaneously
Improve utilization rate and the reaction efficiency of process gas.
Brief description
Fig. 1 discloses the structural representation of quasiconductor reaction chamber in prior art；
Fig. 2 discloses reaction chamber in the present invention wherein embodiment structural representation when picking and placeing wafer；
Fig. 3 discloses the structural representation when carrying out technique for the reaction chamber shown in Fig. 2；
Fig. 4 discloses the upward view of guiding device in a present invention wherein embodiment；
Fig. 5 discloses the upward view of guiding device in another embodiment of the present invention；
Fig. 6 discloses reaction chamber in another embodiment of the present invention structural representation when picking and placeing wafer；
Fig. 7 discloses reaction chamber in Fig. 6 structural representation when carrying out technique；
Fig. 8 discloses the structural representation of the reaction chamber in further embodiment of this invention；
Fig. 9 disclose process rate in one embodiment of the invention correspond between guiding device and wafer carrier away from
From variation relation figure.
Specific embodiment
In conjunction with accompanying drawing and ensuing detailed description, the present invention will be better understood:
Fig. 2 and Fig. 3 discloses the reaction chamber in a present invention wherein embodiment.Reaction chamber in this embodiment
Including chamber body 201, air inlet pipe 202, guiding device 203, wafer carrier 204, support column 205,
Wafer imports and exports 206, floss hole 207 and telescopic component 210 etc..The end of floss hole 207 also sets up
There are flow control meter 208 and vacuum pump 209.Wherein, chamber body 201 has wall, wall is provided with into
Trachea 202 and wafer import and export 206, the wall of air inlet pipe 202 break-through chamber body 201 and air inlet pipe 202
A part stretch in chamber body 201.Air inlet pipe 202 is located at the part within chamber body 201, its
End is connected with guiding device 203.The shape of this guiding device 203 is relative with the shape of wafer carrier 204
Should, rounded.Wherein in an embodiment, as shown in Figure 4, guiding device is circular putting down
Panel 401, circular hole is left at the center of surface plate 401, surface plate 401 to be attached to the end of air inlet pipe
End, now process gas is directly sprayed by air inlet pipe, and to around spreading.In another embodiment, as schemed
Shown in 5, guiding device is a flat cylindrical spray head 501, and the lower surface of spray head 501 is opened
It is provided with many apertures, process gas enters after spray head 501 by air inlet pipe, can by these small hole injections extremely
The surface of wafer.
In figs. 2 and 3 in shown reaction chamber, wafer carrier 204 parallel to guiding device 203, and
The relative lower section being arranged on guiding device 203, this wafer carrier 204 is used for carrying wafer.Guiding device
203 area is not less than the area of wafer carrier 204, to ensure that process gas can be injected into wafer
Whole upper surface.Normally, air inlet pipe 202, guiding device 203 and wafer carrier 204 have identical
Central shaft, be so conducive to technological reaction to carry out more uniform.And, wafer carrier 204 is by supporting
Post 205 holds up, the wall of support column 205 break-through chamber body 201.
In figs. 2 and 3 in shown reaction chamber, this reaction chamber also includes telescopic component 210.Flexible group
Part 210 is used for driving wafer carrier 204 and/or guiding device 203 mobile, so that wafer carrier 204 and water conservancy diversion
The distance between device 203 is adjusted between the first distance and second distance, and this first distance enables mechanical hand to exist
Operate in space between described wafer carrier and guiding device, this second distance is less than the first distance.
Wherein, telescopic component 210 further includes retractable driving device 2101, telescoping tube 2102 and close
Envelope connector 2103.Retractable driving device 2101 is be arranged in parallel with telescoping tube 2102, retractable driving device
2101 and one end of telescoping tube 2102 prop up and connect to the wall of chamber body 201.And retractable driving device
2101 and the other end of telescoping tube 2102 be then tightly connected by seal connector 2103 and be integrated, due to two
Person is tightly connected to be integrated, so retractable driving device 2101 can drive telescoping tube 2102 to stretch together
Or shrink.As shown in Figures 2 and 3, in one embodiment, telescopic component 210 passes through telescoping tube 2102
It is socketed in the outside of support column 205, and support column 205 is sealingly connected to by seal connector 2103.Due to
Support column 205, retractable driving device 2101 and telescoping tube 2102 three are tightly connected, thus
Ensure that support column 205, telescoping tube 2102 and retractable driving device 2101 step one in motor process
Cause.I.e. when retractable driving device 2101 is shunk, telescoping tube 2102 can be driven to shrink, thus promote propping up
Dagger 205 jack-up upwards, and then shorten the distance between guiding device 203 and wafer carrier 204；And work as
When retractable driving device 2101 stretches, then telescoping tube 2102 is driven to stretch, thus will be downward for support column 205
Extract out, and then widen the distance between guiding device 203 and wafer carrier 204.Because support column 205 is worn
The wall of logical chamber body 201 and need move up and down, so support column 205 should not be by chamber body 201
Wall is stopped, preferably ensures that the diameter of support column 205 is less than the diameter in the hole of 205 break-through of support column, this
Sample support column 205 would not be subject to too big resistance and abrasion when moving up and down.For same consideration, stretch
Contracting assembly 210 can pass through the non-contacting outside being socketed in support column 205 of telescoping tube 2102, so stretches
The draw 2102 internally can separate certain space with support column 205, unobstructed in motion.One
In individual embodiment, telescoping tube 2102 can be selected for corrugated tube.In one embodiment, retractable driving device 2101
Can be selected for telescopic cylinder.
In reaction chamber as shown in Figures 2 and 3, it is also provided with air vent 207.The rear of air vent 207
It is provided with flow control meter 208, and air vent 207 is connected with vacuum pump 209.Flow control meter 208
For adjusting gas flow, vacuum pump 209 is responsible for reaction chamber evacuation.
Fig. 2 and Fig. 3 respectively show the reaction chamber in one embodiment of the invention, when picking and placeing wafer and technique
Architectural feature under two states when carrying out.In fig. 2, when picking and placeing wafer, because mechanical hand will enter chamber
Operated in room body 201, so telescopic component 210 is in extended configuration, so that guiding device 203
Enough spaces are left and wafer carrier 204 between.In figure 3, when carrying out technique, in order to improve technique
The utilization rate of gas, telescopic component 210 is in contraction state, thus shortening guiding device 203 and wafer
The distance between load plate 204, have compressed the space between guiding device 203 and wafer carrier 204.Due to
The stop of guiding device 203, the curve arrow after process gas is ejected, in the direction such as Fig. 3 of its flowing
Shown.Can see, after the space of technological reaction is compressed, process gas is above wafer carrier 204
From middle part to sidepiece flowing such that it is able to the whole surface of traversal wafer, the process gas of ejection is fully disappeared
Consumption.Simultaneously as state space is compressed, gas rapidly can touch wafer, thus being conducive to work
The raising of skill efficiency.
Fig. 6 and Fig. 7 discloses the reaction chamber in another embodiment of the present invention.This reaction chamber equally has chamber
Body 601, air inlet pipe 602, guiding device 603, wafer carrier 604, support column 605, wafer turnover
Mouth 606, floss hole 607 and telescopic component 610 etc..The end of floss hole 607 is additionally provided with flow control
System meter 608 and vacuum pump 609.Wherein, chamber body 601 has wall, and wall is provided with air inlet pipe 602
Import and export 606 with wafer, a part for air inlet pipe 602 stretches in chamber body 601.Air inlet pipe 602
In the part within chamber body 601, its end is provided with guiding device 603.This guiding device 603
Shape is corresponding with the shape of wafer carrier 604, rounded.Wherein in an embodiment, as Fig. 4 institute
Show, guiding device is a circular surface plate 401, circular hole is left at the center of surface plate 401, so that
Surface plate 401 is attached to the end of air inlet pipe, now process gas is directly sprayed by air inlet pipe, and to week
Enclose diffusion.In another embodiment, as shown in Figure 5, guiding device is a flat cylindrical spray
501, the lower surface of spray head 501 offers many apertures, and process gas enters spray by air inlet pipe
After 501, can be by the surface of these small hole injections to wafer.
In figure 6 and figure 7 in shown reaction chamber, wafer carrier 604 parallel to guiding device 603, and
The relative lower section being arranged on guiding device 603, this wafer carrier 604 is used for carrying wafer.Guiding device
603 area is not less than the area of wafer carrier 604, to ensure that process gas can be injected into wafer
Whole upper surface.Normally, air inlet pipe 602, guiding device 603 and wafer carrier 604 have identical
Central shaft, be so conducive to technological reaction to carry out more uniform.In addition, wafer carrier 604 be by
Dagger 605 holds up.
In figure 6 and figure 7 in shown reaction chamber, this reaction chamber also includes telescopic component 610.Wherein,
Telescopic component 610 further includes retractable driving device 6101, telescoping tube 6102 and seal connector
6103.Retractable driving device 6101 is be arranged in parallel with telescoping tube 6102, retractable driving device 6101 and stretching
One end of the draw 6102 props up and connects to the wall of chamber body 601.And retractable driving device 6101 and stretching
The other end of the draw 6102 is then tightly connected by seal connector 6103 and is integrated, because the two is sealed
Connect as one, so retractable driving device 6101 can drive telescoping tube 6102 to stretch together or shrink.
As shown in Figure 6 and Figure 7, in one embodiment, telescopic component 610 is socketed by telescoping tube 6102
In the outside of air inlet pipe 602, and air inlet pipe 602 is sealingly connected to by seal connector 6103.Due to air inlet
Pipe 602, retractable driving device 6101 and telescoping tube 6102 three are tightly connected, and so ensure that
Air inlet pipe 602, telescoping tube 6102 and retractable driving device 6101 are acted in agreement in motor process.
I.e. when retractable driving device 6101 is shunk, telescoping tube 6102 can be driven to shrink, thus promoting air inlet pipe
602 extend downwardly, and then shorten the distance between guiding device 603 and wafer carrier 604；And when flexible
When driving means 6101 stretch, then telescoping tube 6102 is driven to stretch, thus air inlet pipe 602 is drawn upwardly out,
And then widen the distance between guiding device 603 and wafer carrier 604.Air inlet pipe 602 break-through chamber body
601 wall, and need to move up and down, so air inlet pipe 602 should not be stopped by the wall of chamber body 601,
Preferably ensure that the diameter of air inlet pipe 602 is less than the diameter in the hole of 602 break-through of air inlet pipe, such air inlet pipe 602
Too big resistance and abrasion would not be subject to during up and down motion.For same consideration, telescopic component 610 can
With by the non-contacting outside being socketed in air inlet pipe 602 of telescoping tube 6102, including such telescoping tube 6102
Portion can separate certain space with support column 605, unobstructed in motion.In one embodiment, stretch
The draw 6102 can be selected for corrugated tube.In one embodiment, retractable driving device 6101 can be selected for flexible gas
Cylinder.
In reaction chamber as shown in Figure 6 and Figure 7, it is also provided with air vent 607.The rear of air vent 607
It is provided with flow control meter 608, and air vent 607 is connected with vacuum pump 609.Flow control meter 608
For adjusting gas flow, vacuum pump 609 is responsible for reaction chamber evacuation.
Fig. 6 and Fig. 7 respectively show the reaction chamber in one embodiment of the invention, when picking and placeing wafer and technique
Architectural feature under two states when carrying out.In figure 6, when picking and placeing wafer, because mechanical hand will enter chamber
Operated in room body 601, so telescopic component 610 is in extended configuration, so that guiding device 603
Enough spaces are left and wafer carrier 604 between.In the figure 7, when carrying out technique, in order to improve technique
The utilization rate of gas, telescopic component 610 is in contraction state, thus shortening guiding device 603 and wafer
The distance between load plate 604, have compressed the space between guiding device 603 and wafer carrier 604.Due to
The stop of guiding device 603, after process gas is ejected, is located at water conservancy diversion dress in the direction such as Fig. 7 of its flowing
Put shown in the straight arrows of 603 lower sections.Can see, after the space of technological reaction is compressed, process gas
Move downward, flow such that it is able to travel through the whole of wafer to the sidepiece of wafer carrier 604 after running into wafer
Surface, the process gas of ejection is fully consumed.Simultaneously as state space is compressed, gas can be fast
Fast touches wafer, thus being conducive to the raising of process efficiency.
Fig. 8 discloses the reaction chamber in further embodiment of this invention.Reaction chamber in this embodiment equally has
Chamber body 801, air inlet pipe 802, guiding device 803, wafer carrier 804, support column 805, wafer
Import and export 806, floss hole 807 and telescopic component 810 etc..The end of floss hole 807 is additionally provided with stream
Amount controls meter 808 and vacuum pump 809.Wherein, chamber body 801 has wall, and wall is provided with air inlet pipe
802 and wafer import and export 806, a part for air inlet pipe 802 break-through chamber body 801 and air inlet pipe 802
Stretch in chamber body 801.Air inlet pipe 802 is located at the part within chamber body 801, and its end is arranged
There is guiding device 803, and the area of guiding device 803 is not less than the area of wafer carrier 804.Alternatively,
Guiding device 803 is circular surface plate or spray head for sectional area.Telescopic component 810 then includes flexible drive
Dynamic device 8101, telescoping tube 8102 and seal connector 8103.Telescopic component 810 and air inlet pipe 802
It is installed together, telescopic component 810 can drive air inlet pipe 802 to move up and down.In this embodiment, lead
That flows device 803 is additionally provided with side week baffle plate 811 side week, and side week baffle plate 811 is perpendicular to wafer carrier 804
Extend downwardly.Area due to guiding device 803 is more than wafer carrier 804, so working as guiding device 803
When close to each other with wafer carrier 804, the side week baffle plate 811 positioned at side week will not touch wafer carrier
804；And because side week baffle plate 811 extends downwardly, so working as guiding device 803 and wafer carrier
804 close to a certain extent when, side week baffle plate 811 lower end necessarily can exceed wafer carrier 804 upper
Surface, is in the position less than wafer carrier 804 upper surface.So, guiding device 803 is as cover
It is located at the top of wafer carrier 804, limit wafer carrier 804 top and the space in side week, thus more
Guide well the flowing of process gas, make the more abundant of process gas reaction.
Fig. 9 is the experimental verification taking the dry etch process in semiconductor technology as a example done.In experiment, change
Become the distance between guiding device and wafer carrier, corresponding etch rate is as shown in curve 901.Permissible
See, in etching process, with the increase of the distance between guiding device and wafer carrier, etch rate becomes
Obtain more and more lower.For the utilization rate of etching gas, also there is similar relation.And it is provided by the present invention
Technical scheme, can when technique is carried out compression stroke, shorten the distance between guiding device and wafer carrier,
So as to obtain higher etch rate and etching gas utilization rate.
Above example is intended to the exemplary principle of the explanation present invention and effect, is not intended to limit the present invention
Technical scheme, the working technical staff of this area and association area can be without prejudice to the spirit of the present invention and model
Under farmland, above-described embodiment is carried out with modifications and changes, but still belong within the inventive concept of the present invention.
Claims (10)
1. a kind of quasiconductor reaction chamber is it is characterised in that include:
Chamber body, the wall of described chamber body is provided with air inlet pipe and wafer is imported and exported, and described air inlet pipe exists
Part in chamber body is connected with guiding device；
Wafer carrier, described wafer carrier is arranged in chamber body, is held up by support column, described wafer carrier
Relative with described guiding device and parallel, described wafer carrier is used for carrying wafer；
Telescopic component, for driving described wafer carrier and/or guiding device to move so that described wafer carrier and
The distance between guiding device is adjusted between the first distance and second distance, and described first distance enables mechanical hand
Operate in the space between described wafer carrier and guiding device, described second distance is less than described first distance.
2. quasiconductor reaction chamber according to claim 1 is it is characterised in that described telescopic component includes stretching
Pipe, seal connector and retractable driving device, described telescoping tube is be arranged in parallel with described retractable driving device, described
Telescoping tube is propped up with one end of described retractable driving device and is connected to the wall of described chamber body, described telescoping tube with
The other end of described retractable driving device is tightly connected by seal connector and is integrated, and described retractable driving device drives
Described telescoping tube stretches or shrinks；
Wherein, described telescopic component is socketed on the outside of described air inlet pipe and close by seal connector by telescoping tube
Envelope connects to air inlet pipe, the wall of chamber body described in described air inlet pipe break-through, and air inlet pipe is not subject to the wall of chamber body
Stop；Or described telescopic component is socketed on the outside of described support column and close by seal connector by telescoping tube
Envelope connects to support column, the wall of chamber body described in described support column break-through, and support column is not subject to the wall of chamber body
Stop.
3. quasiconductor reaction chamber according to claim 1 it is characterised in that the area of described guiding device not
Area less than wafer carrier.
4. quasiconductor reaction chamber according to any one of claim 1 to 3 is it is characterised in that described lead
That flows device is provided with side week baffle plate side week, when described guiding device and wafer carrier are close to each other, all baffle plates in side
Lower end is not less than the upper surface of wafer carrier.
5. quasiconductor reaction chamber according to claim 1 is it is characterised in that described air inlet pipe, guiding device
And wafer carrier has identical central shaft.
6. quasiconductor reaction chamber according to claim 1 is it is characterised in that described guiding device is surface plate
Or spray head.
7. quasiconductor reaction chamber according to claim 1 is it is characterised in that described telescopic component passes through to stretch
Manage the non-contacting outside being socketed on described air inlet pipe or support column.
8. quasiconductor reaction chamber according to claim 7 is it is characterised in that described telescoping tube is corrugated tube.
9. quasiconductor reaction chamber according to claim 2 is it is characterised in that described retractable driving device is to stretch
Contracting cylinder.
10. quasiconductor reaction chamber according to claim 1 it is characterised in that described quasiconductor reaction chamber also
It is provided with air vent, and pass through described inlet chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510427231.5A CN106373906A (en) | 2015-07-20 | 2015-07-20 | Semiconductor reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510427231.5A CN106373906A (en) | 2015-07-20 | 2015-07-20 | Semiconductor reaction cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106373906A true CN106373906A (en) | 2017-02-01 |
Family
ID=57880051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510427231.5A Pending CN106373906A (en) | 2015-07-20 | 2015-07-20 | Semiconductor reaction cavity |
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| CN (1) | CN106373906A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081523A (en) * | 2019-12-26 | 2020-04-28 | 长江存储科技有限责任公司 | Spacing adjusting device, semiconductor equipment and etching process chamber |
| CN111261540A (en) * | 2018-11-30 | 2020-06-09 | 东泰高科装备科技有限公司 | Process chamber and semiconductor processing equipment |
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| JP2009170497A (en) * | 2008-01-11 | 2009-07-30 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
| US20120247516A1 (en) * | 2011-04-04 | 2012-10-04 | Yohei Sato | Supercritical drying method and apparatus for semiconductor substrates |
| CN104103549A (en) * | 2013-04-07 | 2014-10-15 | 盛美半导体设备（上海）有限公司 | Semiconductor process chamber |
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2015
- 2015-07-20 CN CN201510427231.5A patent/CN106373906A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170497A (en) * | 2008-01-11 | 2009-07-30 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
| US20120247516A1 (en) * | 2011-04-04 | 2012-10-04 | Yohei Sato | Supercritical drying method and apparatus for semiconductor substrates |
| CN104103549A (en) * | 2013-04-07 | 2014-10-15 | 盛美半导体设备（上海）有限公司 | Semiconductor process chamber |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261540A (en) * | 2018-11-30 | 2020-06-09 | 东泰高科装备科技有限公司 | Process chamber and semiconductor processing equipment |
| CN111081523A (en) * | 2019-12-26 | 2020-04-28 | 长江存储科技有限责任公司 | Spacing adjusting device, semiconductor equipment and etching process chamber |
| CN111081523B (en) * | 2019-12-26 | 2022-12-16 | 长江存储科技有限责任公司 | Spacing adjusting device, semiconductor equipment and etching process chamber |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Applicant after: Shengmei semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201203 Shanghai City, Pudong New Area China Zhangjiang High Tech Park of Shanghai Cailun Road No. 1690 building fourth Applicant before: ACM (SHANGHAI) Inc. |
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Application publication date: 20170201 |