CN106369367A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- CN106369367A CN106369367A CN201510438508.4A CN201510438508A CN106369367A CN 106369367 A CN106369367 A CN 106369367A CN 201510438508 A CN201510438508 A CN 201510438508A CN 106369367 A CN106369367 A CN 106369367A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting device
- luminescence unit
- brightness
- optical texture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004020 luminiscence type Methods 0.000 claims description 47
- 239000000843 powder Substances 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 15
- 230000035515 penetration Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 6
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- 239000004332 silver Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
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- 238000009877 rendering Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 125000003099 maleoyl group Chemical group C(\C=C/C(=O)*)(=O)* 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229950000845 politef Drugs 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
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- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical class O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a light emitting device. The light emitting device comprises a carrying plate and a light emitting unit, wherein the carrying plate is provided with a first surface and a second surface opposite to the first surface. The light emitting unit is arranged on the first surface and can emit light which faces the first surface but not penetrate the first surface. The light emitting device can measure first brightness above the first surface and can measure second brightness below the second surface, and the specific value of the first brightness and the second brightness is 2-9.
Description
Technical field
The present invention relates to a kind of light-emitting device, especially relate to the light-emitting device with optical texture.
Background technology
Light emitting diode (light-emitting diode for solid-state lighting device；Led) there is consumption
Can the characteristic such as low, life-span length, small volume, response speed be fast and optics output is stable, therefore light two
Pole pipe replaces traditional illuminating product at leisure and is applied to general home lighting.
In recent years, though the filament that light emitting diode is made gradually be applied to light emitting diode bulb it
In.However, the cost of light emitting diode filament, efficiency are still to be improved.Furthermore, make light emitting diode
Filament sends the light field of isotropic directivity, and processes heat dissipation problem, is still the target of development.
Content of the invention
It is that the above and other objects, features and advantages of the present invention can be become apparent, reality cited below particularly
Apply example, and coordinate appended accompanying drawing, be described as follows.
A kind of light-emitting device comprises a support plate, has a first surface and with respect to the second of first surface
Surface and a luminescence unit, setting on the first surface, can emit beam towards but be not passed through the first table
Face.Light-emitting device can measure one first brightness on first surface, and lower in second surface can be measured
Obtain one second brightness, the first brightness is 2～9 with the ratio of this second brightness.
Brief description
Fig. 1 a is the schematic perspective view of a light-emitting device in one embodiment of the invention；
Fig. 1 b is the schematic top plan view of support plate in Fig. 1 a；
Fig. 1 c is the elevational schematic view of support plate in Fig. 1 a；
Fig. 1 d is Fig. 1 a and the generalized section along Fig. 1 bi-i line；
Fig. 1 e is the generalized section of Fig. 1 a；
Fig. 1 f is the enlarged drawing of Fig. 1 e；
Fig. 2 a～Fig. 2 d is respectively different travelings in optical texture for the light being sent by luminescence unit
The schematic diagram in path；
Fig. 2 e is the distribution curve flux figure of light-emitting device in one embodiment of the invention；
Fig. 3 a is a generalized section of luminescence unit in one embodiment of the invention；
Fig. 3 b is a generalized section of luminescence unit in another embodiment of the present invention；
Fig. 3 c is a top view of Fig. 3 b；
Fig. 3 d is a generalized section of luminescence unit in another embodiment of the present invention；
Fig. 4 is the schematic perspective view of a bulb in one embodiment of the invention；
Fig. 5 a is the Making programme figure of light-emitting device in one embodiment of the invention；
Fig. 5 b～Fig. 5 e is the Making programme schematic perspective view of light-emitting device in one embodiment of the invention.
Symbol description
100 light-emitting devices
10 optical textures
101 top surfaces
102 side surfaces
103 side basal surfaces
1031 Part I
1032 Part II
104 basal surfaces
11 support plates
111 upper surfaces
112 lower surfaces
12nd, 12a, 12b, 12d luminescence unit
120a first connection gasket
120b second connection gasket
121 light emitting host
1211 electrodes
122 first transparent bodies
123 phosphor powder layers
124 second transparent bodies
125th, 125 ' the 3rd transparent body
1251 Part I
1251s side surface
1252 Part II
1253 planes
1254 inclined-planes
126 insulating barriers
127 extension electrodes
129 catoptric arrangements
13 circuit structures
131 first electrode pads
132 second electrode pads
133rd, 1331,1331a, 1332,1332b conducting wire
134 the 3rd electronic padses
135 the 4th electronic padses
151 first perforations
152 second perforations
21 supports
211 frameworks
30 bulbs
301 lamp housings
302 circuit boards
303 support columns
304 radiating pieces
305 electrical connectors
307 electrode pieces
308th, 309 metal wire
Specific embodiment
Following examples will along with brief description idea of the invention, in accompanying drawing or explanation, similar or
Identical part is using identical label, and in the accompanying drawings, the shape of element or thickness can expand or
Reduce.Need it is specifically intended that the in figure element that do not illustrate or describe, can be person skilled in the art
Form known to scholar.
Fig. 1 a shows the schematic perspective view of a light-emitting device 100 in one embodiment of the invention.Fig. 1 b is only
The schematic top plan view of support plate 11 in display Fig. 1 a.Fig. 1 c only shows that in Fig. 1 a, looking up of support plate 11 is shown
It is intended to.Fig. 1 d shows Fig. 1 a and the generalized section along Fig. 1 bi-i line.Fig. 1 e shows Fig. 1 a
Generalized section along yz direction.Reference picture 1a～Fig. 1 e, light-emitting device 100 comprises an optics knot
Structure 10, a support plate 11 and multiple luminescence unit 12.Support plate 11 has a upper surface 111 and a following table
Face 112.One circuit structure 13 is formed on upper surface 111 and has a first electrode pad 131,1
Two electronic padses 132 and a conducting wire 133.Luminescence unit 12 is arranged at the conducting wire of upper surface 111
It is serially connected on 133 and by conducting wire 133.In other embodiment, other kinds can be passed through
The design of conducting wire 133 makes luminescence unit 12 be connected in parallel to each other, go here and there and connect or with bridge architecture
Connect.In this embodiment, the light that support plate 11 will not be sent by luminescence unit 12 penetrates (light tight),
Therefore, even if luminescence unit 12 emits beam towards upper surface 111, but not through upper surface 111.
Support plate 11 can be circuit board.The baseplate material (core layer) of circuit board comprises metal, thermoplasticity material
Material, thermosets or ceramic material.Metal comprise the alloys such as aluminum, copper, gold, silver, lamination or
Monolayer.Thermosets comprise phenolic resin (phonetic), epoxy resin (epoxy), double maleoyl
Imines cyanate resin (bismaleimidetriazine) or a combination thereof.Thermoplastic comprises pi
Resin (polyimide resin), politef (polytetrafluorethylene) etc..Ceramic material
Comprise aluminium oxide, aluminium nitride, carbonization sial etc..
As shown in Fig. 1 a, Fig. 1 b and Fig. 1 c, a reflecting layer 14 is formed at upper surface 111 and circuit knot
On structure 13, and only expose the conducting wire 1331,1332 being intended to electrically connect with luminescence unit 12 and electricity
Polar cushion 131,132.Conducting wire 1331 is physically separated each other with conducting wire 1332.Here is implemented
In example, conducting wire 1332a and electronic padses 131 be physically separated each other and conducting wire 1331b with
Electronic padses 132 are physically separated each other.Each luminescence unit 12 comprises one first connection gasket 120a and
Second connection gasket 120b respectively with the conducting wire 1331 exposing, 1332 physical properties and electric connection.
In the present embodiment, the conducting wire 1331,1332 exposing is rectangle and its long side and support plate 11
Long side parallel.In another embodiment, the long side of conducting wire 1331,1332 exposing and load
The minor face of plate 11 is parallel, or presss from both sides, with long side, the angle that between 0～90 °.Or, expose leads
Electric line 1331,1332 can be circular, oval or polygon.Additionally, the setting in reflecting layer 14
Can help reflect by luminescence unit 12 directive towards support plate 11 light with increase light-emitting device 100 entirety send out
Light efficiency.
As shown in Fig. 1 c and Fig. 1 d, luminescence unit 12 is not provided with lower surface 112.Circuit structure 13
Also comprise one the 3rd electronic padses 134 and one the 4th electronic padses 135 are formed at the lower surface 112 of support plate 11.
3rd electronic padses 134 and the 4th electronic padses 135 corresponding first electrode pad 131 and second electrode pad respectively
132 position.One first perforation 151 runs through support plate 11 and has conductive materials and be formed completely or partially
In wherein to electrically connect first electrode pad 131 and the 3rd electronic padses 134.One second perforation 152 runs through load
Plate 11 and have conductive materials be formed completely or partially in wherein with electrically connect second electrode pad 132 and
4th electronic padses 135.Implement in profit one, external power source (power supply) connects the first electricity respectively
Polar cushion 131 and second electrode pad 132 are so that multiple luminescence unit 12 lights.3rd electronic padses 134 and
4th electronic padses 135 can not physical property direct with external power source be connected.When electronic padses 131,132 with
When external power source forms electrical connection using electric welding (butt-joint) mode, due to needing the sandwiched support plate of a metal clip
11, the setting of electronic padses 134,135 grips the steady of light-emitting device 100 during can helping processing technology
Solidity and offer one conductive path.In one embodiment, when using bonding wire by electronic padses 131,132
When electrically connecting with external power source formation, the 3rd electronic padses 134 and the 4th electronic padses 135 can not be formed.
As shown in Fig. 1 a and Fig. 1 e, optical texture 10 coats the upper surface 111 of support plate 11, lower surface
112 and the side wall 113 of support plate 11 long side both sides, but expose electronic padses 131,132,134,135.
Optical texture 10 has just like rectangular section.Fig. 1 f is the enlarged drawing of Fig. 1 e.Optical texture 10
There is the top surface 101 of an arc；Two are essentially linear and the side surface 102 being parallel to each other；Two
Side basal surface 103；And the basal surface 104 being essentially plane, connect both sides basal surface 103.Top table
Face 101 is located at the top of the upper surface 111 of support plate 11, and basal surface 104 is located at the following table of support plate 11
The lower section in face 112.Side surface 102 is from top surface 101 along z direction toward the lower surface 112 of support plate 11
Extend.Every side basal surface 103 comprises a Part I 1031, from side surface 102 with an angle of inclination
Extend toward basal surface 104；And a Part II 1302.The Part II 1302 of the in figure left and right sides
It is respectively connecting to Part I 1031 and extend toward the curved shape of basal surface 104.The lower surface of support plate 11
112 with the basal surface 104 of optical texture 10 at a distance of one between 0.3mm～0.7mm first apart from d1；
The top surface 101 of the upper surface 111 of support plate 11 and optical texture 10 is at a distance of one between 0.8mm～0.13
The second distance d2 of mm.Second distance d2 is more than first apart from d1.The arc tool of top surface 101
Have one between 0.4mm～0.7mm radius of curvature, and there is a curved angle θ 1 (corresponding to arc
Central angle) between 40 °～60 ° or a radian between 2 π/9～π/3.The second of side basal surface 103
Partial arc have one between 0.2～0.4mm radius of curvature, and there is a curved angle θ 2 (arc
Central angle corresponding to shape) between 5 °～20 ° or a radian between π/36～π/9.One spread powder (example
As: titanium dioxide, zirconium oxide, zinc oxide or aluminium oxide) optionally insert in optical texture 10
With the light helping diffusion, scattering luminescence unit 12 to be sent.Weight in optical texture 10 for the spread powder
Percentage concentration (w/w) between 0.1～0.5% and has one 10nm～100nm or 10～50 μm of granule
Size.In one embodiment, weight hundred powder concentration in colloid for the spread powder can pass through thermogravimetric analyzer
(thermogravimetric analyzer, tga) measures.Briefly it, in heating process, colloid
Can be residual because temperature gradually rises and is removed after reaching a specified temp (evaporation or thermal cracking)
Stay spread powder, now can learn the change of weight, therefore can try to achieve colloid with the respective weight of spread powder simultaneously
Push away to obtain concentration expressed in percentage by weight in colloid for the spread powder.Or, can first measure the gross weight of colloid and spread powder
Amount, recycles solvent to remove colloid, finally measures the weight of spread powder, and then try to achieve spread powder in glue
Concentration expressed in percentage by weight in body.In fig 1 a, though visual obtain luminescence unit 12.So, when spread powder is filled out
When entering to optical texture 10 and reaching finite concentration, optical texture 10 can be made to assume white shape and no
Method regards to obtain internal luminescence unit 12.
Optical texture 10 is transparent for the light that sunlight or luminescence unit 12 are sent.Optical texture 10
Comprise silica gel (silicone), epoxy resin (epoxy), pi (pi), benzocyclobutene (bcb),
Cross fluorine Tetramethylene. (pfcb), su8, acrylic resin (acrylic resin), poly-methyl methacrylate
Ester (pmma), polyethylene terephthalate (pet), Merlon (pc), Polyetherimide
(polyetherimide), fluorocarbon polymer (fluorocarbon polymer), aluminium oxide (al2o3)、
Sinr or spin-coating glass (sog).
Fig. 2 a shows the light being sent by luminescence unit 12 the showing of travel path in optical texture 10
It is intended to.Should be noted, the path in accompanying drawing be only many possible paths one of them, not exclusive path,
As follows.For example: the light l of selfluminous cell 12 is incident upon arc-shaped top 101, light l can be in
Top surface 101 produces first refractive light l11 and the first reflection light l12.First reflection light l12
It is incident upon side surface 102, the second refracted light l21 and the second reflected light l22 can be produced in side surface 102.
Second reflection light l22 is incident upon basal surface 104, can produce third reflect light l31 in basal surface 104
And the 3rd reflection light l32.Or, as shown in Figure 2 b, for example: the light m of selfluminous cell 12
It is incident upon arc-shaped top 101, light m can produce first refractive light m11 and the in top surface 101
One reflection light m12.First reflection light m12 is incident upon the Part I 1031 of side basal surface 103,
The second refracted light m21 and the second reflected light m22 can be produced in Part I 1031.Second reflected light
Line m22 is incident upon basal surface 104, can be anti-in basal surface 104 generation third reflect light m31 and the 3rd
Penetrate light m32.Fig. 2 c and Fig. 2 d shows light other possible travel paths in optical texture 10
Schematic diagram.The following table from support plate 10 for the light is increased by the shape design of optical texture 10 of the present invention
Probability and the probability that projects from basal surface 104 of light that face 112 direction is projected.Light-emitting device 100 in
The top (the first side) of upper surface 111 can measure one first brightness, in the lower section (of lower surface 112
Two sides) one second brightness can be measured, the ratio of the first brightness and the second brightness is between 2～9.First
Brightness refers to subsequent descriptions with the definition of the second brightness.Should be noted, the path in accompanying drawing is only many
Possible path one of them, not exclusive path.Additionally, in described above, though light is same on surface
When be refracted and reflect.However, light also may only be refracted or reflected from the teeth outwards, depending on material interface
Refractive index difference, incident angle, depending on wavelength of light etc..
Fig. 2 e shows light-emitting device 100 under electric current 10ma operation and when being in a hot stable state, gained
One distribution curve flux figure.In detail, when light-emitting device 100 lights, available Goniophotometer measures one
The luminosity of imaginary circle (the p1 circle as in Fig. 1 a).Further, luminosity is mapped with angle
A distribution curve flux figure.When measuring, the geometric center of light-emitting device 100 is located substantially in p1
The center of circle of circle.In the present embodiment, concentration expressed in percentage by weight in optical texture 10 for the spread powder is 0.3%.
As illustrated, the high-high brightness of light-emitting device 100 is about 4.53 candle light cd, and from 0 degree to 180 degree
Brightness generally be in a lambertian distribution (lambertian distribution).Specifically, -90 degree is bright
Degree is minimum and about 0.5 candle light (cd), and -90 spend roughly the same to -80 degree brightness, and -80 spend to 90 degree
Brightness is cumulative.- 90～0～90 degree of curve is generally similar with the curve of 90～180～-90 degree, and light intensity
Spend the distribution in -90～0～90 degree and light intensity being distributed with respect to 90～-90 degree in 90～180～-90 degree
Straight line axial symmetry.Additionally, the total brightness of distribution curve flux in figure 0～90～180 degree is defined as the first brightness,
And the total brightness of 0～-90～-180 degree is defined as the second brightness, the first brightness is about with the second ratio twice
4.It is about 160 degree by the lighting angle that distribution curve flux in figure obtains light-emitting device 100 finally.
Lighting angle, it is defined as when brightness is for the 50% of high-high brightness, the angle model now being comprised
Enclose as lighting angle.For example: first by the distribution curve flux being measured on p1 circle in Fig. 2 e figure (electrode seat
Mark) change into rectangular coordinates figure and can obtain a brightness curve figure；Wherein, x-axis is brightness, and y-axis is angle
(not shown).Then, draw one at about 2.265 candle lights (the 50% of high-high brightness) place parallel to x-axis
Bar straight line and meet at 2 points with brightness curve figure；Calculate the angular range of point-to-point transmission, that is, be defined as light emitting anger
Degree.
Fig. 3 a shows a generalized section of luminescence unit 12a in one embodiment of the invention.Luminescence unit
It is transparent that 12a comprises a light emitting host 121, one first transparent body 122, a phosphor powder layer 123, one second
Body 124 and one the 3rd transparent body 125.Light emitting host 121 comprise a substrate, one first type semiconductor layer,
One active layer, the second type semiconductor layer (not indicating above) and two electrodes 1211.When light emitting host 121
During for a heterojunction structure, the first type semiconductor layer and the second type semiconductor layer are, for example, clad (cladding
Layer) and/or limiting layer (confinement layer), electronics, hole can be provided respectively and to have one big
In the energy gap of active layer, thus improve electronics, hole and combine with luminous probability in active layer.First
Type semiconductor layer, active layer and the second type semiconductor layer can comprise-race's semi-conducting material, for example
alxinyga(1-x-y)N or alxinyga(1-x-y)P, wherein 0 x, y 1；(x+y)≦1.According to activity
The material of layer, light emitting host 121 can send a peak value (peak wavelength) or dominant wavelength (dominant
Wavelength) the HONGGUANG between 610nm and 650nm, peak value or dominant wavelength are between 530nm
And the green glow between 570nm, or the peak value or dominant wavelength indigo plant between 450nm and 490nm
Light.Phosphor structure 123 comprises multiple fluorescent powder grains.Fluorescent powder grain has about 5um～100um
Particle size (diameter) and the phosphor material powder of one or more species can be comprised.Fluorescent material material
Material is including but not limited to yellowish green fluorescent powder and red fluorescence powder.The composition of yellowish green fluorescent powder such as alumina
Compound (yag or tag), silicate, vanadate, alkaline-earth metal selenides or metal nitride.
The composition of red fluorescence powder such as fluoride (k2tif6:mn4+、k2sif6:mn4+), silicate, vanadic acid
Salt, alkaline earth sulfide, metal oxynitride or tungsten hydrochlorate race mixture.Phosphor structure 123
The first light that absorbable light emitting host 121 is sent simultaneously is converted into the second light with the first smooth different spectral.
First light and the second light mixing can produce a mixed light, such as white light.In this embodiment, luminescence unit
12 under hot stable state produce light have a white light colour temperature be 2200k～6500k (for example: 2200k,
2400k, 2700k, 3000k, 5700k, 6500k), its color dot value (cie x, y) can fall within seven
The scope of individual MacAdam's ellipse (macadam ellipse), and have one more than 80 or be more than 90
Color rendering (cri).In another embodiment, the first light mix with the second light can produce purple light, gold-tinted or its
The coloured light of his non-white light.
Luminescence unit 12 also comprises an insulating barrier 126 and is formed at first transparent body 122, a phosphor powder layer
123 and second transparent body 124 lower section and do not cover two electrodes 1211 of light emitting host 121；And two extension
Electrode 127 is respectively formed on two electrodes 1211 and is electrically connected with two electrodes 1211.Two extension electrodes 127
Respectively as aforesaid first connection gasket 120a and one second connection gasket 102b (as shown in Figure 1 d).
Insulating barrier 126 is a mixture comprising substrate and high reflectance material.Substrate can for or silica matrix or
Epoxy substrate.High reflectance material can comprise titanium dioxide, silicon dioxide or aluminium oxide.Additionally, insulation
Layer 126 can have reflected light or the effect of diffusion light.Extension electrode 127 comprises metal, for example: copper,
Titanium, gold, nickel, silver, its alloy or its lamination.First transparent body 122, second transparent body 124 and
Three transparent bodies 125 are transparent for the light that sunlight or luminescence unit 12 are sent.First transparent body 122
Or second the transparent body 124 can comprise silica gel (silicone), epoxy resin (epoxy), pi
(pi), benzocyclobutene (bcb), excessively fluorine Tetramethylene. (pfcb), su8, acrylic resin (acrylic
Resin), polymethyl methacrylate (pmma), polyethylene terephthalate (pet), poly- carbon
Acid esters (pc), Polyetherimide (polyetherimide), fluorocarbon polymer (fluorocarbon
Polymer), aluminium oxide (al2o3), sinr or spin-coating glass (sog).3rd transparent body 125
Sapphire (sapphire), diamond (diamond), glass (glass), epoxy resin can be comprised
(epoxy), quartzy (quartz), acrylic resin (acrylic resin), silicon oxide (siox), oxygen
Change aluminum (al2o3), zinc oxide (zno) or silica gel (silicone).
As shown in Figure 3 a, the 3rd transparent body 125 has a shape wide at the top and narrow at the bottom.In detail, the 3rd
The transparent body 125 has a Part I 1251 and a Part II 1252.Part II 1252 relatively leans on
Nearly second transparent body 124 and its width are less than the width of Part I 1251.The thickness of Part I 1251
Degree is about the 1%～20% or 1%～10% of the 3rd transparent body 125 integral thickness.In the present embodiment,
Part I 1251 is an arc with the joint of Part II 1252.Part I 1251 has one
Side surface 1251s, it slightly tilts (facing up) upward, and the side surface compared with second transparent body 124
1241 away from light emitting host 121, can be by the both sides of ray guidance to luminescence unit 12.
In one embodiment, luminescence unit 12a is one towards luminous the lighting of five faces (upper left-right and front-back)
Structure and there is one about 140 degree of lighting angle (beam angle).Optionally, a spread powder can add
It is added in first transparent body 122 or/and second transparent body 124 or/and the 3rd transparent body 125.Another
In one embodiment, luminescence unit 12a does not comprise the 3rd transparent body 125.
Fig. 3 b shows a generalized section of luminescence unit 12b in another embodiment of the present invention.Fig. 3 c
A top view for Fig. 3 b.The luminescence unit of Fig. 3 b accords with similar to the light-emitting device of Fig. 3 a, identical
Number or mark corresponding to element or device, there is similar or identical element or device.As Fig. 3 b
Shown, the 3rd transparent body 125 ' have a frustum (frustum) shape and have a plane 1253 and
Inclined-plane 1254.The design on inclined-plane 1254 can increase the light extraction quantity of light emitting host 121 and change luminous single
The light field of unit 12.Plane 1253 and inclined-plane 1254 can press from both sides one between 120 °～150 ° angle ф and
Depth h1 on inclined-plane 1254 be the 3rd transparent body 125 ' integral thickness h2 30%～70% or
40%～60%.As shown in Figure 3 c, the area (a1 of plane 1253；Triangle) can be transparent for the 3rd
Total projection area (a of body 125 '；Oblique line) 40%～95% or 40%～60%.
Fig. 3 d shows a generalized section of luminescence unit 12d in another embodiment of the present invention.Fig. 3 d
Luminescence unit similar to Fig. 3 a light-emitting device, the element corresponding to identical symbol or mark or
Device, has similar or identical element or device.Luminescence unit 12d also comprises a catoptric arrangement
129 are formed between first transparent body 124 and second transparent body 125.Catoptric arrangement 129 is to inciding
When the light of catoptric arrangement 129 is between wave-length coverage is for 450nm～475nm, have more than 85%
Reflectance；Or have between the scope of 400nm～600nm and be more than in the wavelength of incident light
80% reflectance.The light not reflected by catoptric arrangement 129 can enter the 3rd transparent body 125, and
Luminescence unit 12d or the 3rd transparent body 125 are left by the top or side of the 3rd transparent body 125.If anti-
Penetrate structure 129 and can reflect most light, be greater than 95% reflectance, then in luminescence unit 12d
The 3rd transparent body 125 can omit and without.Catoptric arrangement 129 can be a single layer structure or multilamellar
Structure.Single layer structure is, for example, a metal level, comprises such as silver or aluminum, or monoxide layer, comprises
Such as titanium dioxide.Multiple structure can be metal and the lamination of metal-oxide or distributing Prague
Reflecting mirror (distributed bragg reflector, dbr) is to reach the effect of reflection.Metal and metal
The lamination of oxide such as aluminum and the lamination of aluminium oxide.Distributing Bragg mirror can be folded for non-semiconductor
Layer or semiconductor laminated.The material of non-semiconductor lamination is selected from one of following group: aluminium oxide
(al2o3), silicon oxide (sio2), titanium dioxide (tio2), niobium pentaoxide (nb2o5), nitridation
Silicon (sinx).Semiconductor laminated material is selected from one of following group: gallium nitride (gan), nitridation
Gallium aluminium (algan), aluminum indium gallium nitride (alingan), aluminium arsenide (alas), aluminum gallium arsenide (algaas),
GaAs (gaas).In the present embodiment, whether single layer structure or multiple structure, all without complete
Total reflection light, the light of therefore at least part can be directly through catoptric arrangement 129.
In another embodiment, the luminescence unit 12 in Fig. 1 a can have similar as Fig. 3 a, Fig. 3 b,
Or in Fig. 3 d luminescence unit 12a, 12b, 12d structure, but do not comprise phosphor powder layer in this structure
123.That is, luminescence unit 12 only sends the original ray coming from light emitting host 121, such as HONGGUANG,
Green glow or blue light.Multiple fluorescent powder grains (Wavelength conversion substance) can make an addition to optical texture 10
In, it is converted into second with the first smooth different spectral to absorb the first light that light emitting host 121 sent
Light, the first light and the second light mixing can produce white light.Therefore, light-emitting device 100 can have under hot stable state
Have a white light colour temperature be 2200k～6500k (for example: 2200k, 2400k, 2700k, 3000k, 5700k,
6500k), its color dot value (cie x, y) can fall within seven MacAdam's ellipses (macadam ellipse)
Scope, and have one be more than 80 or more than 90 color rendering (cri).
The luminescence unit of the present embodiment is formed on support plate in a upside-down mounting mode.In other embodiments, may be used
First multiple horizontals or vertical light-emitting unit (not shown) are fixed on using elargol or conductive, transparent glue
On support plate；Then, luminescence unit is formed each other electrical connection using routing mode；Finally, provide optics
Structure cladding luminescence unit is to form light-emitting device.
Fig. 4 shows the axonometric chart of a bulb 30 in one embodiment of the invention.Bulb 30 comprises a lamp housing
301st, a circuit board 302, a support column 303, multiple light-emitting device 100, a radiating piece 304 and
One electrical connector 305.Multiple light-emitting devices 100 are fixing and are electrically connected to support column 303.In detail,
One electrode piece 307 is formed on support column 303 and is electrically connected with circuit board 302.Each light-emitting device 100
The 3rd electronic padses 134 be connected with circuit board 302 by a metal wire 308.Due to first electrode pad 131
Electrically connect with the 3rd electronic padses 134, therefore first electrode pad 131 is also electrically connected with circuit board 302.Often
The second electrode pad 132 of one light-emitting device 100 is connected with electrode piece 307 by a metal wire 309.?
In the present embodiment, by above-mentioned electric connection mode so that light-emitting device 100 is connected in parallel with each other.?
In other embodiment, light-emitting device 100 can be connected in series each other or go here and there and connect.
Fig. 5 a shows the Making programme figure of light-emitting device of the present invention.As shown in Fig. 5 a and Fig. 5 b, step
501: a support 21 is provided.Support 21 has two frameworks 211 and multiple support plate 11 is connected to two frameworks
Between 211.Circuit structure 13 is had on support plate 11, circuit structure 13 can be in support 21 and support plate 11
Formed before or after shaping.For example, if support 21 and support plate 11 on single sheet material using striking out
Shape technology is formed, circuit structure 13 can first pre-formed on this single plate material or in stamping step
Re-form on support plate 11 after rapid.As shown in Fig. 5 a and Fig. 5 c, step 502: using surface bonding
Luminescence unit 12 is fixed on support plate 11 technology (smt), and passes through circuit structure 13, lights single
Unit 12 is electrically connected to each other.As shown in Fig. 5 a and Fig. 5 d, step 503: using a die cast, example
As: injection mo(u)lding (injection molding) or transfer molding (transfer molding) form a light
Learn structure 10 so as to coating luminescence unit 12 and support plate 11 and only exposing electronic padses 131,132.As
Fig. 5 a and step 504 shown in Fig. 5 e: carry out a punching press (punch) or cut processing technology with
Separate support plate 11 and two frameworks 211, thus can form multiple luminous dresses independent of each other simultaneously or disposably
Put 100.
It is to be understood that in the present invention the above embodiments in appropriate circumstances, be can be combined with each other or
Replace, rather than be only limitted to described specific embodiment.Each embodiment cited by the present invention is only in order to say
The bright present invention, and be not used to limit the scope of the present invention.Anyone is made for the present invention any aobvious and easy
The modification seen or change connect without departing from spirit and scope of the invention.
Claims (10)
1. a kind of light-emitting device, comprises:
Support plate, has first surface and the second surface with respect to this first surface；And
Luminescence unit, setting on the first surface, can emit beam towards but be not passed through this first surface；
Wherein, this light-emitting device can measure one first brightness on this first surface, in this second table
The lower of face can measure one second brightness, and this first brightness is 2～9 with the ratio of this second brightness.
2. light-emitting device as claimed in claim 1, also comprises optical texture, can by this light penetration,
And there is the lower section that a top surface is located at this second surface positioned at the top of this first surface and a basal surface.
3. light-emitting device as claimed in claim 2, wherein, this optical texture also has a side surface,
Extend from this top surface toward this basal surface.
4. light-emitting device as claimed in claim 3, wherein, this side surface has an arc area, tool
There is a radian between π/36～π/9.
5. light-emitting device as claimed in claim 2, wherein, this optical texture also has side basal surface,
It is an arc that this side basal surface has a part, and has a radian between 2 π/9～π/3.
6. light-emitting device as claimed in claim 2, wherein, this light may pass through this basal surface.
7. light-emitting device as claimed in claim 2, wherein, this optical texture also comprises a wavelength convert
Material is dispersed therein.
8. light-emitting device as claimed in claim 2, wherein, this optical texture also comprises a spread powder,
It has 0.1～0.5% that a concentration expressed in percentage by weight is this optical texture.
9. light-emitting device as claimed in claim 1, wherein, this luminescence unit have light emitting host,
One transparent configuration covers this light emitting host, and the second transparent configuration is formed on this first transparent configuration.
10. light-emitting device as claimed in claim 9, wherein, this luminescence unit also comprises a catoptric arrangement
It is formed between this first transparent configuration and this second transparent configuration.
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| CN201510438508.4A CN106369367A (en) | 2015-07-23 | 2015-07-23 | Light emitting device |
| CN201910547784.2A CN110260183A (en) | 2015-07-23 | 2015-07-23 | Light emitting device |
| CN201910547650.0A CN110260182B (en) | 2015-07-23 | 2015-07-23 | Light emitting device |
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