CN106328693A - Display panel - Google Patents

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Publication number
CN106328693A
CN106328693A CN201510348609.2A CN201510348609A CN106328693A CN 106328693 A CN106328693 A CN 106328693A CN 201510348609 A CN201510348609 A CN 201510348609A CN 106328693 A CN106328693 A CN 106328693A
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Prior art keywords
layer
display panel
protective layer
metal
molybdenum
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CN201510348609.2A
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Chinese (zh)
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CN106328693B (en
Inventor
李冠锋
颜子旻
陈藏龙
王聿宸
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群创光电股份有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate

Abstract

The invention discloses a display panel. The display panel comprises a substrate, a gate electrode insulating layer, an active layer, a source electrode and a drain electrode, and a first protection layer, wherein a gate electrode is arranged on the substrate; the gate electrode insulating layer is arranged on the gate electrode and the substrate; the active layer is arranged on the gate electrode insulating layer, and the active layer is positioned above the gate electrode; the source electrode and the drain electrode are arranged on the active layer; and the first protection layer is arranged on the source electrode and the drain electrode, wherein a metal oxide layer is formed on the side walls of the source electrode and the drain electrode.

Description

显示面板 Display panel

技术领域 FIELD

[0001] 本发明涉及一种显示面板,尤其涉及一种能防止源极与漏极和其他层别剥离的情形发生的薄膜晶体管基板及包含该薄膜晶体管基板的显示面板。 [0001] The present invention relates to a display panel, particularly, to a thin film transistor substrate can prevent the source and drain layers and other situations not peeling occurred and a display panel including the thin film transistor substrate.

背景技术 Background technique

[0002] 随着显示器技术不断进步,所有的装置均朝体积小、厚度薄、重量轻等趋势发展, 故目前市面上主流的显示器装置已由以往的阴极射线管发展成薄型化显示设备。 [0002] As display technology advances, toward all the devices are small, thin, light weight trends, it is currently mainstream market display device of a conventional cathode ray tube has been developed into a thin display apparatus. 特别是, 液晶显示面板及有机发光二极管显示面板可应用的领域相当多,举凡日常生活中使用的手机、笔记本电脑、摄影机、照相机、音乐播放器、移动导航装置、电视等显示设备,大多数均使用液晶显示面板及有机发光二极管显示面板。 In particular, liquid crystal display panel and an organic light emitting diode display panel considerable art applications, covered the mobile phones, laptop computers, video camera, camera, music player, a mobile navigation device, display devices such as television use in everyday life, are most a liquid crystal display panel and an organic light emitting diode display panel.

[0003] 其中,无论是液晶显示面板及有机发光二极管显示面板,其中一基板均为一薄膜晶体管基板。 [0003] wherein either liquid crystal display panel and an organic light emitting diode display panel, wherein a substrate are a thin film transistor substrate. 目前已知的薄膜晶体管基板种类相当多,目前已知最常见的薄膜晶体管基板的有源层材料为非晶硅、金属氧化物半导体、低温多晶硅。 Known type thin film transistor substrate considerable, currently the most common materials known active layer of an amorphous silicon thin film transistor substrate, a metal oxide semiconductor, a low temperature polysilicon. 其中,以金属氧化物半导体中的IGZO制成的薄膜晶体管,因其具有极低的漏电流,受到各界厂商的瞩目。 Wherein the metal oxide semiconductor thin film transistor of IGZO prepared, it has a very low leakage current because it attracts attention of all manufacturers.

发明内容 SUMMARY

[0004] 本发明的主要目的是提供一种显示面板,其中通过一保护层的设置,可提升薄膜晶体管单元特性并防止薄膜晶体管单元中的源极与漏极和其他层别剥离的情形发生。 [0004] The main object of the present invention is to provide a display panel, wherein by providing a protective layer, can improve the transistor characteristics of the film unit and to prevent the source and drain of the thin film transistor and the other unit layer peeling occurs not the case.

[0005] 本发明的显示面板,包括:一基板,其上方设置有一栅极;一栅极绝缘层,设于该栅极及该基板上;一有源层,设于该栅极绝缘层上,且该有源层位于该栅极上方;一源极及一漏极,设于该有源层上;以及一第一保护层,设于该源极及该漏极上;其中,该源极及该漏极的侧壁上形成有一金属氧化层。 [0005] The display panel according to the present invention, comprising: a substrate which is arranged above a gate electrode; a gate insulating layer disposed on the gate electrode and the substrate; an active layer disposed on the gate insulating layer , and the active layer is located above the gate electrode; a source electrode and a drain electrode disposed on the active layer; and a first protective layer disposed on the source electrode and the drain electrode; wherein the source It is formed on the sidewalls of the drain electrode and a metal oxide layer.

[0006] 本发明的显示面板,该源极与该漏极可包含一金属元素,且该金属氧化层包含该属兀素。 [0006] The display panel according to the present invention, the source and the drain may comprise a metal element, and the metal oxide layer containing the metal element Wu.

[0007] 在本发明的显示面板的实施例中,该源极及该漏极分别具有一底切部,位于该第一保护层下方;更具体而言,该第一保护层的侧壁相较于该源极及该漏极的该侧壁突出。 [0007] In an embodiment of the display panel of the present invention, the source electrode and the drain electrode each having an undercut portion positioned below the first protective layer; more specifically, the sidewall with the first protective layer compared to the source and drain of the sidewall of the projection.

[0008] 在本发明的显示面板的另一实施例中,该源极及该漏极的该侧壁具有一倾斜面, 且该倾斜面的相对远离该第一保护层的一侧较另一侧突出。 Side [0008] In another display panel according to the present embodiment of the invention, the source and the drain of the side wall having an inclined surface, and relatively away from the protective layer of the first inclined surface than the other side tabs.

[0009] 在本发明的显示面板中,该源极及该漏极包含一金属层,且该金属层的材料为铜、 钼、铝、钛、或其组合。 [0009] In the display panel of the present invention, the source electrode and the drain electrode comprises a metal layer and the metal layer material is copper, molybdenum, aluminum, titanium, or combinations thereof. 或者,该源极及该漏极包含多个金属层,且该多个金属层的材料包含铜/钼、铜/钛、钼/铜/钼、钼/错/钼、或钼/错/钛。 Alternatively, the source and the drain comprises a plurality of metal layers, and the material of the plurality of metal layers comprise a copper / molybdenum, copper / titanium, molybdenum / copper / molybdenum, molybdenum / dislocations / molybdenum, or molybdenum / dislocations / Ti .

[0010] 在本发明的显示面板中,有源层材料为IGZO、ITZO、IGTO、IGZTO、ZnON、或其组合; 且优选为IGZO。 [0010] In the display panel of the present invention, the active layer material is IGZO, ITZO, IGTO, IGZTO, ZnON, or combinations thereof; and preferably IGZO.

[0011] 在本发明的显示面板可选择性的还包括一第二保护层,设于有源层及该源极及该漏极间,且该源极及该漏极夹置于该第一保护层及该第二保护层间。 [0011] In the display panel of the present invention can optionally further include a second protective layer disposed between the active layer and the source and the drain, and the source and the drain of the first interposed the protective layer and the second protective interlayer.

[0012] 在本发明的显示面板中,该源极及该漏极可分别具有一底切部,位于该第一保护层与该第二保护层之间。 [0012] In the display panel of the present invention, the source and the drain may have an undercut portion, located between the first protective layer and the second protective layer. 更具体而言,该第一保护层与该第二保护层的侧壁相较于该源极及该漏极的该侧壁突出。 More specifically, the first protective layer and the sidewalls of the second protective layer as compared to the source and drain of the sidewall of the projection.

[0013] 其中,该第一保护层的材料可为一透明金属氧化物、或一绝缘材料;而该第二保护层的材料则仅能为一透明金属氧化物。 [0013] wherein the material of the first protective layer can be a transparent metal oxide, or an insulating material; the material of the second protective layer is only as a transparent metal oxide. 透明金属氧化物的具体例子包括:IT0、IZO、AZ0、 GZO、IGZO、ITZ0、或其组合;而绝缘材料的具体例子包括:氮化硅、氧化铝、氧化钛、及其组合。 Specific examples of the transparent metal oxide include: IT0, IZO, AZ0, GZO, IGZO, ITZ0, or combinations thereof; and specific examples of insulating materials include: silicon nitride, alumina, titania, and combinations thereof.

[0014] 在本发明的显示面板中,该源极与该漏极可包含一金属元素;当薄膜晶体管基板仅包括该第一保护层时,该第一保护层包含该金属元素;而当薄膜晶体管基板同时包括该第一保护层及该第二保护层时,该第一保护层与该第二保护层皆包含该金属元素。 [0014] In the display panel of the present invention, the source and the drain may comprise a metal element; when only the thin film transistor substrate comprising a first protective layer, the protective layer comprises a first metal element; and when the film when transistor substrate includes both the first protective layer and the second protective layer, the first protective layer and the second protective layer containing both the metal element. 该第一保护层的该金属原子的含量可为l-8at%,且较佳为4-5at% ;而扩散至该第二保护层的该金属原子的含量可为3-10at%,且较佳为5. 5-6. 5at%。 The content of the metal atom of the first protective layer may be a l-8at%, and preferably 4-5at%; content of the spread to the protective layer of the second metal atom may be 3-10at%, and more best of 5. 5-6. 5at%.

[0015] 此外,在本发明的显示面板中,该金属氧化层中的氧含量为20_30at %。 [0015] Further, in the display panel of the present invention, the oxygen content of the metal oxide layer is 20_30at%.

[0016] 再者,本发明的显示面板,包括:如前述的基板;一对侧基板;以及一显示介质,夹置于该基板与该对侧基板之间。 [0016] Further, the display panel of the present invention, comprising: a substrate as described above; a pair of side substrate; and a display medium sandwiched between the substrate and the opposite side of the substrate.

[0017] 在本发明的显示面板中,因源极及漏极上更设置有一保护层,故在后续有源层退火及N2O处理的工艺中,仅会于源极及漏极的侧壁上形成金属氧化层,而不会于源极及漏极与其他层别接触的表面上形成金属氧化层;因此,可防止薄膜晶体管单元中的源极与漏极和其他层别剥离的情形发生,并进一步提升所制得的薄膜晶体管单元特性。 [0017] In the display panel of the present invention, because the source and drain is provided with a further protective layer, so that the active layer in the subsequent annealing process and N2O treated, only the source and drain in a side wall forming a metal oxide layer, without the source and the drain of a metal oxide layer formed on another surface of the other contact layer; therefore, possible to prevent the thin film transistor source and drain cells and the other layer peeling occurs not the case, and further enhance the characteristics of thin film transistor cells obtained. 同时,使用本发明的薄膜晶体管基板所制得的显示面板,因薄膜晶体管单元特性的提升,而更可进一步提升显示面板的显示质量。 Meanwhile, the present invention is prepared using a thin film transistor substrate of the display panel, to enhance the cell characteristics due to a thin film transistor, but more may further improve the quality of the display panel.

附图说明 BRIEF DESCRIPTION

[0018] 图IA至IF为本发明实施例1的薄膜晶体管基板的制作流程剖面示意图。 [0018] FIG IA to IF sectional schematic production process of the thin film transistor substrate of Example 1 of the present invention.

[0019] 图2A至2C为本发明实施例1的一实施方式的金属层的制作流程剖面示意图。 [0019] FIGS. 2A to 2C a cross-sectional schematic view of a production process of the metal layer according to Embodiment 1 of the embodiment of the present invention.

[0020] 图3A至3C为本发明实施例1的另一实施方式的金属层的制作流程剖面示意图。 [0020] FIGS. 3A through 3C a cross-sectional schematic view of the production process of the metal layer in Example 1 of another embodiment of the embodiment of the present invention.

[0021] 图4A至4F为本发明实施例2的薄膜晶体管基板的制作流程剖面示意图。 [0021] FIGS. 4A to 4F thin film transistor substrate production process according to the second embodiment of the present invention, a schematic cross-sectional view.

[0022] 图5A至5C为本发明实施例2的一实施方式的金属层的制作流程剖面示意图。 [0022] FIGS. 5A to 5C a cross-sectional schematic view of a production process of the metal layer according to Embodiment 2 of the present invention.

[0023] 图6A至6C为本发明实施例2的另一实施方式的金属层的制作流程剖面示意图。 [0023] FIGS. 6A to 6C sectional schematic production process of the metal layer to another embodiment of the second embodiment of the present invention.

[0024] 图7A至7C为本发明实施例2的再一实施方式的金属层的制作流程剖面示意图。 [0024] FIGS. 7A to 7C sectional schematic production process of the metal layer a further embodiment of Embodiment 2 of the present embodiment of the invention.

[0025] 图8及9分别为图4F所示的薄膜晶体管基板部分区域于A-A'及B-B'剖面在线的元素分析结果图。 [0025] FIGS. 8 and 9 are part of the TFT substrate in FIG. 4F element shown in cross-sectional area online A-A 'and B-B' analysis results in FIG.

[0026] 图IOA至IOC为本发明实施例3的一实施方式的金属层的制作流程剖面示意图。 [0026] FIG IOA IOC to the production process of the present invention cross-sectional view of a metal layer according to Embodiment 3 of the embodiment.

[0027] 图IlA至IlC为本发明实施例3的另一实施方式的金属层的制作流程剖面示意图。 [0027] FIG IlC IlA to the production process of the present invention cross-sectional view of another embodiment of the metal layer 3 of the embodiment of FIG.

[0028] 图12为本发明实施例4的显示面板的剖面示意图。 [0028] FIG. 12 is a schematic cross-sectional view of a display panel according to Embodiment 4 of the present invention.

[0029] 图13为本发明实施例5的触控显示面板的剖面示意图。 Touch [0029] Example embodiments of the present invention FIG 13 shows a schematic cross-sectional view of the 5 panel.

[0030] 附图标记说明 [0030] REFERENCE NUMERALS

[0031] 11基板12栅极 [0031] 11 12 gate electrode substrate

[0032] 13栅极绝缘层14有源层 [0032] The gate insulating layer 13 active layer 14

[0033] 15金属层15a第一金属层 [0033] The metal layer 15 first metal layer 15a

[0034] 15a'、15b'、15c'、15d' 侧壁15b 第二金属层 [0034] 15a ', 15b', 15c ', 15d' side wall 15b of the second metal layer

[0035] 15c第三金属层15d第四金属层 [0035] 15c third metal layer a fourth metal layer 15d

[0036] 151源极152漏极 [0036] The source electrode 152 drain electrode 151

[0037] 153 通道区151a, 151b, 152a, 152b 金属氧化层 [0037] 153 channel region 151a, 151b, 152a, 152b the metal oxide layer

[0038] 161第一保护层161a侧壁 [0038] The protective layer 161 of the first side wall 161a

[0039] 162第二保护层162a侧壁 [0039] The second protective layer 162 side wall 162a

[0040] 17绝缘层41薄膜晶体管基板 [0040] 17 insulating layer 41 thin film transistor substrate

[0041] 42对侧基板43显示介质 [0041] opposite side of the substrate 42 43 display medium

[0042] 51显示面板52触控面板 [0042] The display panel 52 of the touch panel 51

[0043] AA '、BB ' 剖面线 [0043] AA ', BB' section line

具体实施方式 Detailed ways

[0044] 以下是通过特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点与功效。 [0044] The following are embodiments of the present invention by certain specific embodiments, those skilled in the art by the disclosure of the present specification easily understand other advantages and effects of the present invention. 本发明也可通过其他不同的具体实施例加以施行或应用,本说明书中的各项细节亦可针对不同观点与应用,在不悖离本发明的精神下进行各种修饰与变更。 The present invention may also be performed or applied by other different specific embodiments, the details of the specification may also, that various modifications and variations without departing from the spirit of the present invention in different perspectives and applications.

[0045] 实施例1 [0045] Example 1

[0046] 请参照图IA至1F,图IA至IF为本实施例的薄膜晶体管基板的制作流程剖面示意图。 [0046] Referring to FIG IA. 1F, IA to the production process of the thin film transistor substrate of the present embodiment IF sectional view. 首先,如图IA所示,提供一基板11,其上方依序设置有一栅极12、一栅极绝缘层13、一有源层14、及一金属层15。 First, as shown in FIG IA, a substrate 11 is provided, over which a gate electrode 12 are sequentially arranged, a gate insulating layer 13, an active layer 14, and a metal layer 15. 其中,栅极12、栅极绝缘层13、有源层14、及金属层15可使用本 Wherein the gate electrode 12, a gate insulating layer 13, active layer 14 and metal layer 15 may be used according to the present

技术领域常用的方法形成,故在此不再赘述。 BACKGROUND conventional forming methods, it is not repeated here. 此外,在本实施例中,基板11可使用本技术领域常用的基材材料制作,例如玻璃、塑料、及其他可挠性材质等;栅极绝缘层13可使用本技术领域常用的绝缘层材料(如:氧化物、氮化物或氮氧化物)制作;有源层14可使用本技术领域常用的金属氧化物半导体材料制作,如IGZO、ITZO、IGTO、IGZT0、Zn0N、及其组合等,在本实施例中,有源层14的材料为IGZO ;而栅极12及金属层15的材料可使用本技术领域常用的导电材料,如金属、合金、或其他本技术领域常用的电极材料,且较佳为金属材料。 Further, in the present embodiment, the substrate 11 can be commonly used in the art of the substrate material, such as glass, plastic, or other flexible materials and the like; a gate insulating layer 13 may be commonly used in the art insulating layer material (eg: an oxide, nitride or oxynitride) production; active layer 14 may use conventional metal oxide semiconductor materials in the art, such as IGZO, ITZO, IGTO, IGZT0, Zn0N, and combinations thereof, in in this embodiment, the material of the IGZO active layer 14; and the material of the gate metal layer 15 and 12 may be conventional in the art using a conductive material, such as metal, alloy, or other conventional technical field of this electrode material, and preferably metallic material.

[0047] 在形成金属层15后,又在金属层15上形成一第一保护层161,其厚度约为100-3000A,且较佳为丨00-500A。 [0047] After forming the metal layer 15, and a first protective layer 161 is formed on the metal layer 15 having a thickness of about 100-3000A, Shu and preferably 00-500A. 接着,如图IB所示,在第一保护层161上又形成一掩模21 ;并通过一蚀刻工艺,图案化第一保护层161,以使第一保护层161具有与掩模21相同的图案。 Subsequently, as shown the IB, on the first protective layer 161 and a mask 21 is formed; by an etching process, the patterned first protective layer 161, protective layer 161 so that the first mask 21 having the same pattern. 在此,用于图案化第一保护层161的工艺,可依据第一保护层161的材料做适当的选择。 Here, the process for patterning the first protective layer 161, may be suitably selected depending on the material of the first protective layer 161. 在本实施例中,第一保护层161可使用一透明金属氧化物、或一绝缘材料;其中,透明金属氧化物的具体例子包括:IT0、IZ0、AZ0、GZ0、IGZO、ITZ0、及其组合,而绝缘材料的具体例子包括:氮化硅(SiN x)、氧化铝(AlOx)、氧化钛(TiOx)、及其组合(较佳为,氮化硅)。 In the present embodiment, the first protective layer 161 may use a transparent metal oxide, or an insulating material; wherein specific examples of the transparent metal oxide include: IT0, IZ0, AZ0, GZ0, IGZO, ITZ0, and combinations thereof , and specific examples of insulating materials include: silicon nitride (SiN x), aluminum oxide (AlO x), titanium oxide (the TiOx), and combinations thereof (preferably, silicon nitride). 当第一保护层161使用透明金属氧化物制作时,可以湿蚀刻方式将其图案化,而蚀刻液可使用本 When the first transparent protective layer 161 made of metal oxide, wet etching may be patterned, and this etching liquid may be used

技术领域已知的蚀刻液,如:草酸或磷酸、醋酸及硝酸(PAN(phosphoric-acetic-nitric)) 的混合蚀刻液等;而当第一保护层161使用绝缘材料制作时,可以干蚀刻或湿蚀刻方式将其图案化,例如,可使用包含SF 6/02S CF 4的气体进行干蚀刻的方式、或使用包含HF的二氧化娃蚀刻剂(Buffered oxide etch, B0E)的湿蚀刻方式进行。 An etching solution known in the art, such as: oxalic acid or phosphoric acid, acetic acid, and nitric acid (PAN (phosphoric-acetic-nitric)) mixed etching solution; and when the first protective layer 161 using an insulating material may be dry etching or wet-etching the patterned, for example, may be performed by wet etching using a gas comprising SF 6 / 02S CF 4 dry etching manner, or baby dioxide containing HF etchant (Buffered oxide etch, B0E) of.

[0048] 在图案化第一保护层161后,如图ID所示,更进一步图案化金属层15,以定义出源极151及漏极152,且源极151及漏极152间设有一通道区153,以显露有源层14。 [0048] After patterning the first protective layer 161, as shown in FIG patterned metal layer further ID 15, to define the source 151 and the drain electrode 152, and the source 151 and the drain 152 has a passage region 153 to expose the active layer 14. 在此,用于图案化金属层15的工艺,可依据金属层15的材料做适当的选择,且可选用干蚀刻或湿蚀刻方式;而关于金属层15的材料及其对应的图案化金属层15所使用的蚀刻方法,将在之后说明。 Here, the process for patterning the metal layer 15 can be suitably selected depending on the material of the metal layer 15, and optional dry etching or wet etching; and the corresponding material on the patterned metal layer of the metal layer 15 15 the method of etching used, will be described later.

[0049] 在图案化金属层15的同时,容易造成有源层14表面的氧缺陷增加,导致最终所制得的薄膜晶体管组件特性不佳;因此,在图案化金属层15后,会进行一回复步骤,其包含退火处理,以及通入N 20(g),以回复有源层14的半导体特性。 [0049] While the patterned metal layer 15 is likely to cause increase in the oxygen defects on the surface of the active layer 14, leading to poor properties of the final assembly of the thin film transistor prepared; thus, after a patterned metal layer 15, may be a return step comprising annealing, and into N 20 (g), to restore the semiconductor characteristics of the active layer 14. 当进行回复步骤的同时,则会分别于源极151及漏极152的侧壁形成金属氧化层151a,151b,152a,152b,如图IE所示。 When both reply step, respectively, will be the source 151 and drain 152 of the side walls forming the metal oxide layer 151a, 151b, 152a, 152b, as shown in Figure IE. 最后,再形成一绝缘层17,则完成本实施例的薄膜晶体管基板的制作,如图IF所示。 Finally, an insulating layer 17 is formed, making the thin film transistor substrate of the present embodiment is completed as shown in FIG IF.

[0050] 如图IF所示,本实施例的薄膜晶体管基板,包括:一基板11,其上方设置有一栅极12 ;-栅极绝缘层13,设于栅极12及基板11上;一有源层14,设于栅极绝缘层13上,且位于栅极12上方;一源极151及一漏极152,设于有源层14上,且源极151及漏极152间设有一通道区153,以显露有源层14 ;以及一第一保护层161,设于源极151及漏极152上;其中,源极151及漏极152的侧壁上形成一金属氧化层151a,151b,152a,152b。 [0050] As shown the IF, a thin film transistor substrate according to the present embodiment comprises: a substrate 11, which is arranged above a gate electrode 12; - a gate insulating layer 13, and gate electrode 12 is provided on the substrate 11; have a source layer 14, disposed on the gate insulating layer 13, and above the gate electrode 12; 151 a source electrode and a drain electrode 152, disposed on the active layer 14, and the source 151 and drain 152 has a passage region 153 to expose the active layer 14; and a first protective layer 161, 151 disposed on electrode 152 and the drain source; wherein a source 151 and a metal oxide layer 151a formed on the sidewalls of the drain 152, 151b , 152a, 152b. 在此,金属氧化层151a,151b,152a,152b形成于源极151及漏极152的所有侧壁上,包括邻近通道区153 的所有侧壁上。 The metal oxide layers 151a, 151b, 152a, 152b are formed on the source 151 and drain 152 of all sides, including all sidewalls adjacent the channel region 153.

[0051] 接下来,将详细描述IE中源极151的侧壁形成金属氧化层151a,151b的各种实施方式;至于漏极152的材料因与源极151相同,故关于漏极152部分的说明将不再赘述。 [0051] Next, will be described in detail in the source IE sidewall 151 to form various embodiments of a metal oxide layer 151a, 151b; as the drain electrode 152 due to electrode material 151 and the same source, so that on the portion of the drain 152 Description will be omitted.

[0052] 图2A至2C为本实施例的一实施方式的金属层的制作流程剖面示意图。 [0052] FIGS. 2A to 2C production process of the metal layer according to one embodiment of the cross-sectional schematic diagram of FIG. 首先,如图IC及2A所不,金属层15可为包括第一金属层15a及第二金属层15b的双层金属结构,其中第一金属层15a的材料为铜,而第二金属层15b的材料为钼或钛。 First, as shown in FIG. 2A and IC are not, the metal layer 15 may be a two-layer metal structure including a first metal layer 15a and the second metal layer 15b, wherein the first metal layer 15a of material is copper and the second metal layer 15b material is molybdenum or titanium. 经蚀刻后,如图ID及2B 所示,源极151具有一底切部,在第一保护层161下方;更具体而言,第一保护层161的一保护层侧壁161a相较于源极151中的第一金属层15a的侧壁15a'及第二金属层15b的侧壁15b'突出。 After etching, as shown in ID and 2B, the source electrode 151 has an undercut portion below the first protective layer 161; more specifically, a protective layer, a first sidewall 161a of the protective layer 161 as compared to the source the first metal layer 15a in the electrode 151 side wall 15a 'and a second metal layer 15b of the side wall 15b' protruding. 由于第一金属层15a的蚀刻速率较第二金属层15b要快,故第二金属层15b的侧壁15b'也相较于第一金属层15a的侧壁15a'突出。 The etching rate of the first metal layer 15a over the second metal layer 15b to be fast, so that the second metal layer 15b of the side wall 15b 'is also compared to the first metal layer 15a of the side wall 15a' protruding. 而后,当进行回复步骤后,则会于第一金属层15a的侧壁15a'及第二金属层15b的侧壁15b'上形成金属氧化层151a, 151b,如图IE及2C所示。 Then, when the reply step, the first metal layer 15a will sidewalls 15a 'and the side wall 15b of the second metal layer 15b' is formed on the metal oxide layer 151a, 151b, as shown in FIG. 2C and IE. 由于铜的氧化速率较钼或钛要快,故在第一金属层15a的侧壁15a'上所形成的氧化铜厚度较第二金属层15b的侧壁15b'上所形成的氧化钼或氧化钛厚度大。 Molybdenum oxide or the oxidation rate of the copper or titanium molybdenum faster than, the first metal layer 15a so that the side walls 15a 'formed on the copper oxide thickness than the side wall 15b of the second metal layer 15b' formed thereon titanium large thickness.

[0053] 在此,当第一金属层15a为铜层而第二金属层15b为钼层时,则可使用H2O 2类蚀刻液,以湿蚀刻方式图案化第一金属层15a及第二金属层15b。 [0053] Here, when the first metal layer is a copper layer 15a and the second metal layer is a molybdenum layer 15b, may be used Class 2 H2O etchant by wet etching the patterned first metal layer 15a and the second metal layer 15b. 当第一金属层15a为铜层而第二金属层15b为钛层时,则可使用H 2O2类蚀刻液图案化第一金属层15a,并使用干蚀刻图案化第二金属层15b。 When the first metal layer is a copper layer 15a and the second metal layer is a titanium layer 15b, may be used based etching solution H 2O2 patterned first metal layer 15a, and a dry etching using the patterned second metal layer 15b.

[0054] 图3A至3C为本实施例的另一实施方式的金属层的制作流程剖面示意图;其与图2A至2C所示的实施方式类似,除了本实施方式的金属层15更包括一第三金属层15c,其材料为钼。 Production process cross-sectional view of another embodiment of the metal layer of the embodiment of [0054] Figures 3A to 3C of the present embodiment; similar manner as shown in FIGS. 2A to 2C embodiment, except that the metal layer of the present embodiment further comprises a first 15 three metal layer 15c, the material is molybdenum. 如图ID及3B所示,经蚀刻后,第一保护层161的一保护层侧壁161a相较于第三金属层15c的侧壁15c'突出,且第三金属层15c的侧壁15c'也相较于第一金属层15a的侧壁15a'突出。 ID and FIG. 3B, after the etching, a protective layer, the protective layer 161 is a first sidewall 161a of the metal layer compared to the third side wall 15c, 15c 'protruded, and the third metal layer 15c of the side wall 15c' also compared to the first metal layer 15a of the side wall 15a 'protruding. 如图IE及3C所示,当进行回复步骤后,第三金属层15c的侧壁15c'上也形成金属氧化层151a, 151b,且第一金属层15a的侧壁15a'上所形成的金属氧化层151a, 151b 厚度较第三金属层15c的侧壁15c'的金属氧化层151a,151b厚度大。 FIG. IE and the metal, when the reply step, the third metal layer 15c of the side wall 15c 'is also formed on the metal oxide layer 151a, 151b, the first metal layer 15a and the sidewall 15a' 3C formed on oxide layer 151a, 151b than the thickness of the third metal layer 15c of the side wall 15c 'of the metal oxide layer 151a, 151b is thick.

[0055] 在此,当第一金属层15a为铜层而第二金属层15b及第三金属层15c为钼层时,则可使用H2O2类蚀刻液,以湿蚀刻方式图案化第一金属层15a、第二金属层15b及第三金属层15c〇 [0055] Here, when the first metal layer is a copper layer 15a and the second metal layer 15b and the third metal layer is a molybdenum layer 15c, H2O2-based etchant may be used, by wet etching the patterned first metal layer 15a, 15b and the second metal layer a third metal layer 15c〇

[0056] 实施例2 [0056] Example 2

[0057] 请参照图4A至4F,图4A至4F为本实施例的薄膜晶体管基板的制作流程剖面示意图。 [0057] Referring to FIGS. 4A to 4F, FIGS. 4A to 4F production process of the thin film transistor substrate according to a cross-sectional schematic view of the present embodiment. 本实施例额薄膜晶体管基板的制作方法、结构、材料与实施例1相似,除了下述不同点。 Example Amount manufacturing method of the present embodiment of the thin film transistor substrate, structures, materials similar to Example 1, except for the following differences.

[0058] 如图4A所示,在本实施例的薄膜晶体管基板中,在形成有源层14后,更形成一第二保护层162,其厚度约为丨00-3000A,且较佳为丨00-500A;在此,第二保护层162的材料可为透明金属氧化物,其具体例子包括:IT0、IZ0、AZ0、GZ0、IGZO、ITZ0、及其组合。 [0058] As shown in FIG. 4A, the thin film transistor substrate according to the present embodiment, after forming the active layer 14, forming a further second protective layer 162, a thickness of about Shu 00-3000A, and preferably Shu 00-500A; here, the material of the second protective layer 162 may be a transparent metal oxide, and specific examples thereof include: IT0, IZ0, AZ0, GZ0, IGZO, ITZ0, and combinations thereof. 此外,如图4D所示,除了图案化金属层15以定义出源极151及漏极152,更对第二保护层162图案化,以在信道区153显露有源层14。 Further, it is shown in Figure 4D, except that patterned metal layer 15 to define the source 151 and the drain electrode 152, but also on the second protective layer 162 is patterned to expose the channel region 153 of the active layer 14. 由于第二保护层162的材料可为透明金属氧化物,其也具有导电特性,因此,源极151与有源层14之间、漏极152与有源层14之间皆可电性连接。 Since the material of the second protective layer 162 may be a transparent metal oxide, which also has conductive properties, therefore, between the source 14 151, the active layer 152 and the drain Jieke electrical connection between the active layer 14.

[0059] 如图4F所示,相较于图IF所示的实施例1的薄膜晶体管基板,本实施例的薄膜晶体管基板还包括:一第二保护层162,设于有源层14与源极151之间,以及有源层14与漏极152之间,且源极151及漏极152夹置于第一保护层161及第二保护层162间。 [0059] FIG. 4F, a thin film transistor substrate 1 compared to the embodiment illustrated in FIG the IF, a thin film transistor substrate according to the present embodiment further comprises: a second protective layer 162, disposed on the active layer 14 and the source between electrode 151 and the active layer 14 and the drain electrode 152, source electrode 151 and drain electrode 152 and a first protective layer 161 is sandwiched and a second protective layer 162.

[0060] 接下来,将详细描述4E中源极151的侧壁形成金属氧化层151a,151b的各种实施方式;至于漏极152额材料因与源极151相同,故关于漏极152部分的说明将不再赘述。 [0060] Next, will be described in detail in the side wall of the source 151 forming the metal oxide layer 4E various embodiments 151a, 151b; as the amount of material due to the drain electrode 152 and 151 the same source, so that on the portion of the drain 152 Description will be omitted. [0061]图5A至5C为本实施例的一实施方式的金属层的制作流程剖面示意图。 Production process of the metal layer [0061] FIGS. 5A-5C an embodiment of the present embodiment is a cross-sectional schematic view of embodiment. 首先,如图4C及5A所不,金属层15可为具有单一第一金属层15a的结构,其中第一金属层15a的材料为铜。 First, FIG. 4C and 5A do not, the metal layer 15 may be a unitary structure having a first metal layer 15a, wherein the first metal layer 15a of material is copper. 经蚀刻后,如图4D及5B所示,源极151具有一底切部,在第一保护层161下方; 更具体而言,第一保护层161的侧壁161a相较于源极151中的第一金属层15a的侧壁15a' 突出。 After etched, as shown in FIG. 4D and 5B, the source electrode 151 has an undercut portion below the first protective layer 161; more specifically, a first sidewall 161a of the protective layer 161 as compared to the source electrode 151 a first metal layer 15a of the side wall 15a 'protruding. 此外,第二保护层162的侧壁162a亦相较于源极151中的第一金属层15a额侧壁15a'突出。 Further, the second protective layer side wall 162a 162 also compared to the amount of the source of the first metal layer 15a in the side wall electrode 151 15a 'protruding. 而后,当进行回复步骤后,则会于第一金属层15a的侧壁15a'上形成金属氧化层151a,151b,如图4E及5C所示。 Then the metal oxide layer, the step after the reply, it will first metal layer 15a forming sidewalls 15a 151a, 151b ', as shown in FIG 4E and 5C.

[0062] 图6A至6C为本实施例的另一实施方式的金属层的制作流程剖面示意图,其结构、 材料及实施方式均与实施例1中图2A至2C所示的实施方式相同,除了本实施方式的金属层下又形成一第二保护层162,且第一保护层161的侧壁161a及第二保护层162的侧壁162a均相较于第一金属层15a的侧壁15a'及第二金属层15b的侧壁15b'突出。 Production process cross-sectional view of another embodiment of the metal layer of the embodiment of [0062] Figures 6A to 6C of the present embodiment are the same as in Example 1 in the embodiment shown in FIG embodiment 2A to 2C their structures, materials and embodiments, except that the lower metal layer of the present embodiment is formed and a second protective layer 162, protective layer 161 and the sidewall of the first sidewall 161a and 162a of the second protective layer 162 are compared to the first metal layer 15a of the side wall 15a ' and a second metal layer 15b of the side wall 15b 'protruding.

[0063] 图7A至7C为本实施例的再一实施方式的金属层的制作流程剖面示意图,其结构、 材料及实施方式均与实施例1中图3A至3C所示额实施方式相同,除了本实施方式的金属层下更形成一第二保护层162,且第一保护层161的侧壁161a及第二保护层162的侧壁162a均相较于第一金属层15a的侧壁15a'、第二金属层15b的侧壁15b'及第三金属层15c 的侧壁15c'突出。 Cross-sectional diagram of a production process of the metal layer further example of embodiment [0063] FIGS. 7A to 7C of the present embodiment are the same as in Example 1 in the embodiment shown in FIGS. 3A to 3C Amount embodiment the structure, materials and embodiments, except that a further second protective layer 162 is formed under the metal layer of the present embodiment, the protective layer 161 and the sidewall of the first sidewall 161a and 162a of the second protective layer 162 are compared to the first metal layer 15a of the side wall 15a ' 'and the side wall 15c of the third metal layer 15c', the second metal layer 15b of the side wall 15b protrudes.

[0064] 实验例 [0064] Experimental Example

[0065] 请同时参考图4F及5C,当将图4F中圆圈所表示的区域及以图5C所示的当第一金属层15a为铜层的情形进行元素分析,在不同剖面上的元素分析结果分别如图8及9所示。 [0065] Please refer to FIGS. 4F and 5C, when the area indicated by the circle in FIG. 4F, and FIG. 5C when the elemental analysis in the different sections of the first metal layer 15a is subjected to elemental analysis in the case of a copper layer, The results are shown in FIG. 8 and 9.

[0066] 图8及9中圆圈所表示的区域即为对应图4F中圆圈所表示的区域的放大图。 Area indicated by the circle [0066] FIGS. 8 and 9, namely corresponding to an enlarged view of the circled area indicated 4F. 当沿着A-A'剖面线进行元素分析,如图8中图表所示,在Onm至约60nm相对位置的区域中主要元素组成为Si及0,可对应至以SiOjIj得的绝缘层17 ;在60nm至约120nm相对位置的区域中主要元素组成为Cu及0,可对应至材料为CuOx的金属氧化层152a ;而在约120nm以后相对位置的区域中主要元素组成为Cu,可对应至材料为Cu的漏极152。 When elemental along 'A-A line cross-sectional analysis, the graph shown in FIG. 8, the relative position in the region of about 60nm Onm main elements of Si and 0, may correspond to the insulating layer 17 SiOjIj obtained; in 60nm to about 120nm region of the major elements in the relative position of the composition of Cu and 0, it may correspond to the material CuOx a metal oxide layer 152a; and after about 120nm region of the major elements in the relative position of the composition of Cu, may correspond to the material the drain 152 Cu. 由此结果得知, 经进行回复步骤后,漏极152侧壁上所形成的金属氧化层152a厚度约为60nm ;此外,金属氧化层152a中的氧原子含量为20_30at% ;然而,本发明的其他实施例的金属氧化层152a 的厚度及氧含量并不仅限于此,可依据回复步骤的条件不同而有所改变。 From this result that, after the step of reply, the thickness of the metal oxide layer 152a formed on the drain side walls 152 of about 60 nm; Further, the content of oxygen atoms in the metal oxide layer 152a was 20_30at%; however, the present invention the thickness and oxygen content of the metal oxide layer 152a of the other embodiments is not limited thereto, and various changes can vary according to the conditions of the step responses.

[0067] 当沿着B-B'剖面线进行元素分析,如图9中图表所示,在Onm至约25nm相对位置的区域中主要元素组成为Si及0,可对应至以SiOJij得的绝缘层17 ;在约25nm至约50nm 相对位置的区域中主要元素组成为Zn及0,且含少量的In,可对应至以IZO制得的第一保护层161 ;在约50nm至约250nm相对位置的区域中主要元素组成为Cu,可对应至材料为Cu 的漏极152 ;在约250nm至约270nm相对位置的区域中主要元素组成为Zn及0,且含少量的In,可对应至以IZO制得的第二保护层162 ;在约270nm至约300nm相对位置的区域元素组成大部分In、Ga、Zn及0,可对应至材料为IGZO的有源层14 ;而于约300nm以后相对位置的区域中主要元素组成为Si及0,可对应至以SiOji##的栅极绝缘层13。 [0067] When elemental along 'the line B-B cross-sectional analysis, the graph shown in FIG. 9, the relative position in the region of Onm to 25nm about the main elements of Si and 0, may correspond to the insulation obtained in SiOJij layer 17; from about 25nm to about 50nm in the region of the relative position of the main elements of Zn and 0, and containing a small amount of in, may correspond to a first protective layer made of IZO 161; relative position between about 50nm to about 250nm the region of the main elements of Cu, may correspond to the Cu material of the drain 152; from about 250nm to about 270nm relative position of the region of the main elements of Zn and 0, and containing a small amount of in, may correspond to at IZO the second protective layer 162 made of; area element of about 270nm to about 300nm up most of the relative position of in, Ga, Zn and 0 may correspond to the material in the IGZO active layer 14; and the relative position of about 300nm at a later the region of the main elements of Si and 0, may correspond to the gate insulating layer 13 of SiOji ##.

[0068] 在此,需特别注意的是,在图9中,在约25nm至约50nm及约250nm至约300nm相对位置的区域中,元素组成更包括少量的Cu ;此结果代表,在回复步骤的过程中,源极(图未示)及漏极152的材料中的金属元素部分扩散至第一保护层161及第二保护层162,使得第一保护层161及第二保护层162包含源极(图未示)及漏极152的材料中的金属元素。 [0068] Here, required special attention, in FIG. 9, in the 50nm and the region of about 25nm to about 250nm relative positions from about to about 300nm, the elements further include small amounts of a Cu; this result represents, in reply to step process, a source (not shown) and the drain of a metal element material 152 diffuses into the portion of the first protective layer 161 and the second protective layer 162, such that the second protective layer 161 and first protective layer 162 includes a source pole (not shown) and a metal element material 152 in the drain. 在本实施例中,漏极152材料所含的铜,部分扩散至第一保护层161,使得最后扩散至第一保护层161的铜元素含量为4. 0-5. Oat %,而最后扩散至第二保护层162的铜元素含量为5. 5-6. 5at%。 In the present embodiment, the copper material contained in the drain electrode 152, to the first part of the diffusion protective layer 161, so that the copper content of the final spread to a first protective layer 161 is 4. 0-5. Oat%, and the final diffusion to a second copper content of the protective layer 162 is 5. 5-6. 5at%. 然而,在其他实施例中,扩散至第一保护层161及第二保护层162的漏极152材料中的金属元素含量可依据回复步骤的条件不同而有所改变,且扩散至第二保护层162的金属元素含量较扩散至第一保护层161的金属元素含量要多;较佳为,扩散至第一保护层161的金属元素含量可为I-Sat %,而扩散至第二保护层162的金属元素含量可为3-10at% 〇 However, in other embodiments, a first protective layer diffused to the protective layer 161 and the second drain electrode 152 material, the content of metal element 162 may vary depending on the condition return step change varies, and a protective layer diffused into the second content of metal elements 162 than to the diffusion of metal elements in the first protective layer 161 to be more; preferably, diffused into the first metal element content of the protective layer 161 may be an I-Sat%, while the diffusion protective layer 162 to the second the content of metal elements may be square 3-10at%

[0069] 实施例3 [0069] Example 3

[0070] 请参照图IOA至IOC及IlA至11C,本实施例的薄膜晶体管基板的制作方法、结构、 材料与实施例1及2相似,除了下述不同点。 [0070] Referring to FIGS. IOA and IOC to IlA. 11C, method for manufacturing the thin film transistor substrate of the present embodiment, the structures, materials and embodiments similar to Example 1 and 2, except for the following differences.

[0071] 图IOA至IOC为本实施例的一实施方式的金属层的制作流程剖面示意图,其结构、 材料及实施方式均与实施例1中图3A至3C所示的实施方式相同,除了本实施方式使用铝层的第四金属层15d以取代实施例1中的使用铜层的第一金属层15a。 Production process of the metal layer according to an embodiment of the cross-sectional view [0071] FIG IOA IOC to the present embodiment, are the same as in Example 1 in the embodiment shown in FIG embodiment. 3A to 3C their structures, materials and embodiments, except that the present embodiment aluminum layer is a metal layer 15d of the fourth embodiment in place of the copper layer using a first metal layer in Example 1 15a. 此外,由于本实施方式使用铝层作为第四金属层15d,故可以磷酸、醋酸及硝酸(PAN)的混合蚀刻液图案化第四金属层15d。 Further, since the present embodiment uses an aluminum layer as the fourth metal layer 15d, it is possible to phosphoric acid, acetic acid, and nitric acid (PAN) a mixed etchant patterned fourth metal layer 15d. 再者,当进行回复步骤后,第四金属层15d的侧壁15d'上也形成氧化铝的金属氧化层151a, 151b。 Further, when the reply step, the metal oxide layer is also formed of aluminum 151a, 151b on the side wall 15d 'of the fourth metal layer 15d.

[0072] 由于铝蚀刻表现与铜不同,如图IOB及IOC所示,当以湿蚀刻方式图案化第四金属层15d时,源极151的第四金属层15d的侧壁15d'具有一倾斜面,且该倾斜面的相对远离第一保护层161的一侧较另一侧突出。 [0072] Since aluminum etching performance of copper and different IOB and FIG IOC, when patterned by wet etching the fourth metal layer 15d, the source electrode of the fourth metal layer 151 of the side wall 15d 15d 'has an inclined surface, and a first protective layer remote from the side opposite the inclined surface 161 projecting than the other side.

[0073] 图IlA至IlC为本实施例的另一实施方式的金属层的制作流程剖面示意图;其与图IOA至IOC所示的实施方式类似,除了本实施方式的第二金属层15b下更形成一第二保护层162。 Production process according to another embodiment the metal layer is a schematic sectional view of the embodiment [0073] FIG IlC IlA to the present embodiment; FIG IOA through which the IOC embodiment shown is similar except that the lower metal layer 15b of the second embodiment according to the present embodiment is more a second protective layer 162 is formed.

[0074] 实施例4 [0074] Example 4

[0075] 本实施例前述的薄膜晶体管基板可应用于显示面板中。 [0075] The thin film transistor substrate of the present embodiment may be applied to the display panel. 因此,如图12,本实施例显示面板包括:一薄膜晶体管基板41 ;一对侧基板42 ;以及一显示介质43,夹置于薄膜晶体管基板41与对侧基板42之间。 Thus, as shown in FIG 12, the present embodiment includes a display panel embodiment: a thin film transistor substrate 41; a pair of side substrate 42; and a display media 43, 42 interposed between the TFT substrate 41 and the opposite side of the substrate. 在本实施例中,显示介质43可为一液晶层或一有机发光二极管层。 In the present embodiment, display medium 43 may be a liquid crystal layer or an organic light emitting diode layer. 此外,对侧基板42可为一上方设置有彩色滤光层的彩色滤光片基板或一保护玻璃;在其他实施例中,彩色滤光层亦可设置于薄膜晶体管基板41上,故薄膜晶体管基板41 为整合彩色滤光片数组的薄膜晶体管基板(color filter on array, C0A)。 In addition, the opposite side of the substrate 42 may be disposed above the color filter substrate has a color filter layer or a protective glass; In other embodiments, the color filter layer may also be disposed on the TFT substrate 41, so that a thin film transistor integrating the color filter substrate 41 is a thin film transistor array substrate (color filter on array, C0A).

[0076] 再者,本实施例所提供的显示面板,也可与本技术领域已知的触控面板合并使用, 如图13所示,本实施例的触控显示面板包括:一如前述的显示面板51 ;以及一触控面板52,设置于显示面板51上。 [0076] Further, the touch display panel of the embodiment of the present embodiment provided, also known in the art with the combined use of the touch panel shown in Figure 13, a display panel of the present embodiment comprises: the above-described as the display panel 51; and a touch panel 52 disposed on the display panel 51.

[0077] 本发明前述实施例所制得的显示面板及触控显示面板,可应用于本技术领域已知的任何需要显示屏幕的电子装置上,如显示器、手机、笔记本电脑、摄影机、照相机、音乐播放器、移动导航装置、电视等。 [0077] The foregoing embodiment of the present invention prepared a display panel and a touch panel display embodiment, known in the art may be applied to any electronic device to be displayed on a screen, such as monitors, mobile phones, notebook computers, video camera, camera, music player, a mobile navigation device, a television and the like.

[0078] 以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。 [0078] The above descriptions are merely embodiments of the present invention, but not intended to limit the present invention, all within the spirit and principle of the present invention, any changes made, equivalent substitutions and improvements should be included in the within the scope of the present invention.

Claims (22)

1. 一种显不面板,包括: 一基板,其上方设置有一栅极; 一栅极绝缘层,设于该栅极及该基板上; 一有源层,设于该栅极绝缘层上,且该有源层位于该栅极上方; 一源极及一漏极,设于该有源层上;以及一第一保护层,设于该源极及该漏极上; 其中,该源极及该漏极的侧壁上形成一金属氧化层。 A panel is not significant, comprising: a substrate which is arranged above a gate electrode; a gate insulating layer disposed on the gate electrode and the substrate; an active layer disposed on the gate insulating layer, and the active layer is located above the gate electrode; a source electrode and a drain electrode disposed on the active layer; and a first protective layer disposed on the source electrode and the drain electrode; wherein the source and a metal oxide layer is formed on the side walls of the drain.
2. 根据权利要求1所述的显示面板,其特征在于,该源极与该漏极包含一金属元素,且该金属氧化层包含该金属元素。 2. The display panel according to claim 1, wherein the source comprises a metal element and the drain, and the metal oxide layer containing the metal element.
3. 根据权利要求1所述的显示面板,其特征在于,该金属氧化层中的氧原子的含量为20_30at %〇 3. The display panel according to claim 1, wherein the content of oxygen atoms of the metal oxide layer is square 20_30at%
4. 根据权利要求1所述的显示面板,其特征在于,该第一保护层的材料为一透明金属氧化物。 4. The display panel of claim 1, wherein the material of the first protective layer is a transparent metal oxide.
5. 根据权利要求4所述的显示面板,其特征在于,该透明金属氧化物为ΙΤΟ、IZO、AZO、 GZO、IGZO、ITZO、或其组合。 The display panel according to claim 4, wherein the transparent metal oxide is ΙΤΟ, IZO, AZO, GZO, IGZO, ITZO, or a combination thereof.
6. 根据权利要求1所述的显示面板,其特征在于,该第一保护层的材料为一绝缘材料。 The display panel according to claim 1, characterized in that the material of the first protective layer is an insulating material.
7. 根据权利要求6所述的显示面板,其特征在于,该绝缘材料为氮化硅、氧化铝、氧化钛、或其组合。 The display panel according to claim 6, wherein the insulating material is silicon nitride, aluminum oxide, titanium oxide, or combinations thereof.
8. 根据权利要求1所述的显示面板,其特征在于,该第一保护层的侧壁相较于该源极及该漏极的该侧壁突出。 8. The display panel of claim 1, wherein the first sidewall protective layer as compared to the source and drain of the sidewall of the projection.
9. 根据权利要求1所述的显示面板,其特征在于,该源极及该漏极包含至少一金属层, 且该金属层的材料为铜、钼、铝、钛、或其组合。 9. The display panel of claim 1, wherein the source and the drain comprises at least one metal layer and the metal layer material is copper, molybdenum, aluminum, titanium, or combinations thereof.
10. 根据权利要求9所述的显示面板,其特征在于,该源极及该漏极包含多个金属层, 且该多个金属层的材料包含铜/钼、铜/钛、钼/铜/钼、钼/铝/钼、或钼/铝/钛。 The display panel according to claim 9, wherein the source electrode and the drain electrode comprises a plurality of metal layers, and the material of the plurality of metal layers comprise a copper / molybdenum, copper / titanium, molybdenum / copper / molybdenum, molybdenum / aluminum / molybdenum or molybdenum / aluminum / titanium.
11. 根据权利要求2所述的显示面板,其特征在于,该第一保护层包含该金属元素,且该第一保护层中的该金属元素的含量为l_8at%。 11. The display panel of claim 2, wherein the protective layer comprises a first metal element, and the content of the metal element of the first protective layer is l_8at%.
12. 根据权利要求2所述的显示面板,其特征在于,还包括一第二保护层,设于有源层及该源极及该漏极之间,且该源极及该漏极夹置于该第一保护层及该第二保护层之间。 The display panel according to claim 2, characterized in that, further comprising a second protective layer disposed on the active layer and the source and between the drain electrode and the source electrode and the drain electrode sandwiched between the first protective layer and the second protective layer.
13. 根据权利要求12所述的显示面板,其特征在于,该第二保护层的材料为一透明金属氧化物。 The display panel as claimed in claim 12, characterized in that the material of the second protective layer is a transparent metal oxide.
14. 根据权利要求13所述的显示面板,其特征在于,该透明金属氧化物为ΙΤΟ、IZO、 AZO、GZO、IGZO、ITZO、或其组合。 14. The display panel of claim 13, wherein the transparent metal oxide is ΙΤΟ, IZO, AZO, GZO, IGZO, ITZO, or a combination thereof.
15. 根据权利要求12所述的显示面板,其特征在于,该第一保护层与该第二保护层的侧壁相较于该源极及该漏极的该侧壁突出。 The display panel as claimed in claim 12, wherein the first protective layer and the second protective layer sidewalls as compared to the source and drain of the sidewall of the projection.
16. 根据权利要求12所述的显示面板,其特征在于,该源极及该漏极包含至少一金属层,且该金属层的材料为铜、钼、铝、钛、或其组合。 16. The display panel as claimed in claim 12, wherein the source and the drain comprises at least one metal layer and the metal layer material is copper, molybdenum, aluminum, titanium, or combinations thereof.
17. 根据权利要求16所述的显示面板,其特征在于,该源极及该漏极包含多个金属层, 且该多个金属层的材料包含铜/钼、铜/钛、钼/铜/钼、钼/铝/钼、或钼/铝/钛。 17. The display panel according to claim 16, wherein the source electrode and the drain electrode comprises a plurality of metal layers, and the material of the plurality of metal layers comprise a copper / molybdenum, copper / titanium, molybdenum / copper / molybdenum, molybdenum / aluminum / molybdenum or molybdenum / aluminum / titanium.
18. 根据权利要求12所述的显示面板,其特征在于,该第一保护层与该第二保护层分别包含该金属元素。 18. The display panel as claimed in claim 12, wherein the first protective layer and the second protective layer containing the metal element respectively.
19. 根据权利要求18所述的显示面板,其特征在于,该第一保护层中的该金属元素额含量为l-8at%。 19. The display panel according to claim 18, wherein the amount of the metal element content of the first protective layer is l-8at%.
20. 根据权利要求18所述的显示面板,其特征在于,该第二保护层中的该金属元素的含量为3-10at%。 20. The display panel according to claim 18, wherein the content of the metal element of the second protective layer is 3-10at%.
21. 根据权利要求18所述的显示面板,其特征在于,该第二保护层中的该金属元素的含量大于该第一保护层中的该金属元素的含量。 21. The display panel according to claim 18, wherein the content of the metal element of the second protective layer is larger than the content of the metal element of the first protective layer.
22. 根据权利要求1所述的显示面板,其特征在于,还包括: 一对侧基板;以及一显示介质,夹置于该基板与该对侧基板之间。 22. The display panel according to claim 1, characterized in that, further comprising: a pair of side substrate; and a display medium sandwiched between the substrate and the opposite side of the substrate.
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