CN106328588A - 薄芯片加工及贴片组装方法 - Google Patents

薄芯片加工及贴片组装方法 Download PDF

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CN106328588A
CN106328588A CN201610768572.3A CN201610768572A CN106328588A CN 106328588 A CN106328588 A CN 106328588A CN 201610768572 A CN201610768572 A CN 201610768572A CN 106328588 A CN106328588 A CN 106328588A
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wafer
slide glass
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唐昊
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Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01ELECTRIC ELEMENTS
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

本发明公开了一种薄芯片加工及贴片组装方法,它包括:步骤1、将功能晶圆与载片晶圆通过键合胶键合;步骤2、对功能晶圆进行减薄处理;步骤3、将功能晶圆连同载片晶圆切割成若干子单元;步骤4、通过夹持机构抓取子单元中的载片晶圆并移动至对应的基板上;步骤5、子单元中的功能晶圆与基板键合,且在夹持机构抽离的过程中带动功能晶圆和载片晶圆解键合。本发明提供一种薄芯片加工及贴片组装方法,其在不影响晶圆品质的基础上可以减少加工工序,且无需额外的薄芯片取片治具、薄芯片贴片治具等专用设备,因此加工效率高、加工成本低。

Description

薄芯片加工及贴片组装方法
技术领域
本发明涉及微电子的技术领域,具体地是一种薄芯片加工及贴片组装方法。
背景技术
所谓的薄芯片加工是指在行业内对于整块晶圆进行减薄等加工处理之后,再将整块晶圆切割成所需的尺寸大小,而此减薄并切割后的颗粒状晶圆即为薄芯片,最后将此切割完成后的薄芯片逐个安装于相应的基板上,从而完成薄芯片的加工及贴片。由于减薄后的整块晶圆极易碎裂,因此其减薄过程中需要将晶圆键合于载片上,所以现有行业内的对于晶圆的加工方法简单来说包括以下步骤,1)整块晶圆通过键合胶键合于载片上,2)对整块晶圆进行减薄加工及其他工艺加工,3)将载片连同减薄后的晶圆贴合在切割膜上,4)解键合去除载片,并使薄晶圆留于切割膜上,5)去除薄晶圆上残留的键合胶,6)切割薄晶圆至所需尺寸,从而形成颗粒状的薄芯片,7)利用专用的薄芯片取片治具从切割膜上取下薄芯片,然后将薄芯片贴片组装在基板上。由此完成薄芯片从整块晶圆到完成贴片的全部工序。
不难看出,现有技术的这一薄芯片的加工及贴片组装过程中,不仅工序多、操作复杂而且其使用的切割保护膜价格较高。
发明内容
本发明所要解决的技术问题是:提供一种薄芯片加工及贴片组装方法,其在不影响晶圆品质的基础上可以减少加工工序,且无需额外的薄芯片取片治具、薄芯片贴片治具等专用设备,因此加工效率高、加工成本低。
本发明所采取的技术方案是:提供一种薄芯片加工及贴片组装方法,它包括:
步骤1、将功能晶圆与载片晶圆通过键合胶键合;
步骤2、对功能晶圆进行减薄处理;
步骤3、将功能晶圆连同载片晶圆切割成若干子单元;
步骤4、通过夹持机构抓取子单元中的载片晶圆并移动至对应的基板上;
步骤5、子单元中的功能晶圆与基板键合,且在夹持机构抽离的过程中带动功能晶圆和载片晶圆解键合。
通过此薄芯片加工及贴片组装方法,可以免去额外的薄芯片取片治具、薄芯片贴片治具等特殊处理设备和工序,同时也便于晶圆的切割,在载片晶圆的保护下,其切割过程中功能晶圆的成品率高。
所述的步骤5包括:
步骤5.1a、夹持机构带动子单元朝向基板所在位置移动至子单元中的功能晶圆与基板键合;
步骤5.2a、夹持机构带动子单元中的载片晶圆沿轴向朝背离基板的方向运动,同时夹持机构同步带动载片晶圆沿周向转动。
此载片晶圆和功能晶圆的解键合过程中,载片晶圆沿轴向抽离功能晶圆,同步使载片晶圆相对于功能晶圆转动,通过载片晶圆的转动可以使解键合所要克服的阻尼力小。
所述的夹持机构为一可移动的机械臂,机械臂的工作端上设有至少一个真空吸盘,用于吸合或松脱载片晶圆。
所述的键合胶为紫外固化胶,且键合胶的正面所对应的载片晶圆或键合胶的背面所对应的功能晶圆和基板为透光材质制成,所述的步骤5包括:
步骤5.1b、夹持机构带动子单元朝向基板所在位置移动至子单元中的功能晶圆与基板键合;
步骤5.2b、紫外光透过透光材质制成的基板或载片晶圆照射至紫外固化胶上,用于使紫外固化胶的粘性降低;
步骤5.3b、夹持机构沿载片晶圆的轴向朝背离基板的方向运动,且带动载片晶圆与功能晶圆解键合。功能晶圆和载片晶圆之间的键合胶粘性降低,因此解键合过程更为方便。
所述的键合胶为紫外固化胶,且键合胶的正面所对应的载片晶圆或键合胶的背面所对应的功能晶圆和基板为透光材质制成,在步骤4之后设有步骤7用于替代步骤5,所述的步骤7包括:
步骤7.1、夹持机构复位至远离载片晶圆;
步骤7.2、紫外光透过透光材质制成的基板或载片晶圆照射至紫外固化胶上,用于使紫外固化胶的粘性降低;
步骤7.3、去除功能晶圆上的载片晶圆。
步骤7.2和步骤7.3之间可以设有步骤7.4、将多个基板搬运同一紫外光照射区域。
所述的步骤7.3是指从功能晶圆和载片晶圆之间吹入空气使载片晶圆脱离。
所述的步骤7.3包括一槽体,基板连同基板上的功能晶圆和载片晶圆浸泡于槽体的溶液内,搅动槽体内的溶液至载片晶圆脱落。
采用以上结构后,本发明的薄芯片加工及贴片组装方法与现有技术相比具有以下优点:首先,工序少,且在功能晶圆切割的过程中,载片晶圆起到保护作用,因此功能晶圆的切割后成品率高,同时也减少了切割工序的设备精度要求,其次,功能晶圆和载片晶圆的解键合过程无需借助额外的设备,在夹持机构带动功能晶圆键合于基板上后通过夹持机构的转动动作可以带动功能晶圆和载片晶圆的解键合,最后,通过紫外光照射可以基本消除紫外固化胶的粘性,从而便于功能晶圆和载片晶圆解键合。
附图说明
图1是本发明的薄芯片加工及贴片组装方法的流程示意图。
图2为图1中“A”区域的放大示意图。
图3为图1中“B”区域的放大示意图。
图4是本发明的薄芯片加工及贴片组装方法的另一种流程示意图
其中,1、功能晶圆,2、载片晶圆,3、夹持机构,4、基板,5、槽体。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步说明。
本发明提供一种薄芯片加工及贴片组装方法,它包括:
步骤1、将功能晶圆1与载片晶圆2通过键合胶键合;
步骤2、对功能晶圆1进行减薄处理;
其特征在于:它还包括:
步骤3、将功能晶圆1连同载片晶圆2切割成若干子单元;每个子单元都包含有小片的功能晶圆1和载片晶圆2。
步骤4、通过夹持机构3抓取子单元中的载片晶圆2并移动至对应的基板4上;
步骤5、子单元中的功能晶圆1与基板4键合,且在夹持机构3抽离的过程中带动功能晶圆1和载片晶圆2解键合。
所述的步骤5包括:
步骤5.1a、夹持机构3带动子单元朝向基板4所在位置移动至子单元中的功能晶圆1与基板4键合;所述功能晶圆1上涂覆一粘接胶,所述的粘接胶用于将功能晶圆1和基板4键合,且粘接胶固化后的粘接强度大于功能晶圆1和载片晶圆2之间键合胶的粘接强度。
步骤5.2a、夹持机构3带动子单元中的载片晶圆2沿轴向朝背离基板4的方向运动,同时夹持机构3同步带动载片晶圆2沿周向转动。
所述的夹持机构3为一可移动的机械臂,机械臂的工作端上设有至少一个真空吸盘,用于吸合或松脱载片晶圆2。
所述的键合胶为紫外固化胶,且键合胶的正面所对应的载片晶圆2或键合胶的背面所对应的功能晶圆1和基板4为透光材质制成,,所述的步骤5包括:
步骤5.1b、夹持机构3带动子单元朝向基板4所在位置移动至子单元中的功能晶圆1与基板4键合;
步骤5.2b、紫外光透过透光材质制成的基板4或载片晶圆2照射至紫外固化胶上,用于使紫外固化胶的粘性降低;当然紫外光透过基板4时同样投射过功能晶圆1.
步骤5.3b、夹持机构3沿载片晶圆2的轴向朝背离基板4的方向运动,且带动载片晶圆2与功能晶圆1解键合。功能晶圆1和载片晶圆2解键合过程可以沿用上述步骤5.2a,即夹持机构3在复位的过程中带动载片晶圆2与功能晶圆1自然脱离,其夹持机构3也可以通过上述的扭转过程以便于载片晶圆2与功能晶圆1更好的脱开。当然,由于采用紫外固化胶作为键合胶,因此当紫外光照射后,载片晶圆2与功能晶圆1之间的粘性降低,因此通过抖动或者吹气等常规方式也可使载片晶圆2脱落。
所述的键合胶为紫外固化胶,且键合胶的正面所对应的载片晶圆2或键合胶的背面所对应的功能晶圆1和基板4为透光材质制成,在步骤4之后设有步骤7用于替代步骤5,所述的步骤7包括:
步骤7.1、夹持机构3复位至远离载片晶圆2;先行撤去夹持机构3,从而便于后续的载片晶圆2和功能晶圆1的解键合。
步骤7.2、紫外光透过透光材质制成的基板4或载片晶圆2照射至紫外固化胶上,用于使紫外固化胶的粘性降低;可以降低至接近零值。
步骤7.3、去除功能晶圆1上的载片晶圆2。由于功能晶圆1和载片晶圆2至今的紫外固化胶(简称UV胶)的粘性接近于零,因此可以选用多种现有的解键合的方式实现二者的解键合。
步骤7.2和步骤7.3之间可以设有步骤7.4、将多个基板搬运同一紫外光照射区域。由此可以实现多个基板同步进行紫外光的照射。
所述的步骤7.3是指从功能晶圆1和载片晶圆2之间吹入空气使载片晶圆2脱离。其可以选用专利申请号为201510404757.1的晶圆解键合装置进行载片晶圆2的去除。
所述的步骤7.3包括一槽体5,基板4连同基板4上的功能晶圆1和载片晶圆4浸泡于槽体5的溶液内,搅动槽体5内的溶液至载片晶圆2脱落。
以上就本发明较佳的实施例作了说明,但不能理解为是对权利要求的限制。本发明不仅局限于以上实施例,其具体结构允许有变化,凡在本发明独立要求的保护范围内所作的各种变化均在本发明的保护范围内。

Claims (8)

1.一种薄芯片加工及贴片组装方法,它包括:
步骤1、将功能晶圆(1)与载片晶圆(2)通过键合胶键合;
步骤2、对功能晶圆(1)进行减薄处理;
其特征在于:它还包括:
步骤3、将功能晶圆(1)连同载片晶圆(2)切割成若干子单元;
步骤4、通过夹持机构(3)抓取子单元中的载片晶圆(2)并移动至对应的基板(4)上;
步骤5、子单元中的功能晶圆(1)与基板(4)键合,且在夹持机构(3)抽离的过程中带动功能晶圆(1)和载片晶圆(2)解键合。
2.根据权利要求1所述的薄芯片加工及贴片组装方法,其特征在于:所述的步骤5包括:
步骤5.1a、夹持机构(3)带动子单元朝向基板(4)所在位置移动至子单元中的功能晶圆(1)与基板(4)键合;
步骤5.2a、夹持机构(3)带动子单元中的载片晶圆(2)沿轴向朝背离基板(4)的方向运动,同时夹持机构(3)同步带动载片晶圆(2)沿周向转动。
3.根据权利要求1所述的薄芯片加工及贴片组装方法,其特征在于:所述的夹持机构(3)为一可移动的机械臂,机械臂的工作端上设有至少一个真空吸盘,用于吸合或松脱载片晶圆(2)。
4.根据权利要求1所述的薄芯片加工及贴片组装方法,其特征在于:所述的键合胶为紫外固化胶,且键合胶的正面所对应的载片晶圆(2)或键合胶的背面所对应的功能晶圆(1)和基板(4)为透光材质制成,所述的步骤5包括:
步骤5.1b、夹持机构(3)带动子单元朝向基板(4)所在位置移动至子单元中的功能晶圆(1)与基板(4)键合;
步骤5.2b、紫外光透过透光材质制成的基板(4)或载片晶圆(2)照射至紫外固化胶上,用于使紫外固化胶的粘性降低;
步骤5.3b、夹持机构(3)沿载片晶圆(2)的轴向朝背离基板(4)的方向运动,且带动载片晶圆(2)与功能晶圆(1)解键合。
5.根据权利要求1所述的薄芯片加工及贴片组装方法,其特征在于:所述的键合胶为紫外固化胶,且键合胶的正面所对应的载片晶圆(2)或键合胶的背面所对应的功能晶圆(1)和基板(4)为透光材质制成,在步骤4之后设有步骤7用于替代步骤5,所述的步骤7包括:
步骤7.1、夹持机构(3)复位至远离载片晶圆(2);
步骤7.2、紫外光透过透光材质制成的基板(4)或载片晶圆(2)照射至紫外固化胶上,用于使紫外固化胶的粘性降低;
步骤7.3、去除功能晶圆(1)上的载片晶圆(2)。
6.根据权利要求5所述的薄芯片加工及贴片组装方法,其特征在于:步骤7.2和步骤7.3之间可以设有步骤7.4、将多个基板搬运同一紫外光照射区域。
7.根据权利要求5所述的薄芯片加工及贴片组装方法,其特征在于:所述的步骤7.3是指从功能晶圆和载片晶圆之间吹入空气使载片晶圆(2)脱离。
8.根据权利要求5所述的薄芯片加工及贴片组装方法,其特征在于:所述的步骤7.3包括一槽体(5),基板(4)连同基板(4)上的功能晶圆(1)和载片晶圆(4)浸泡于槽体(5)的溶液内,搅动槽体(5)内的溶液至载片晶圆(2)脱落。
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CN106952857A (zh) * 2017-03-28 2017-07-14 深圳市化讯半导体材料有限公司 一种用于晶圆加工的设备
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