CN106328389B - The encapsulating structure of ultracapacitor - Google Patents

The encapsulating structure of ultracapacitor Download PDF

Info

Publication number
CN106328389B
CN106328389B CN201510339116.2A CN201510339116A CN106328389B CN 106328389 B CN106328389 B CN 106328389B CN 201510339116 A CN201510339116 A CN 201510339116A CN 106328389 B CN106328389 B CN 106328389B
Authority
CN
China
Prior art keywords
ultracapacitor
substrate
face
side
formed
Prior art date
Application number
CN201510339116.2A
Other languages
Chinese (zh)
Other versions
CN106328389A (en
Inventor
陈石矶
李皞白
Original Assignee
冠研(上海)专利技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 冠研(上海)专利技术有限公司 filed Critical 冠研(上海)专利技术有限公司
Priority to CN201510339116.2A priority Critical patent/CN106328389B/en
Publication of CN106328389A publication Critical patent/CN106328389A/en
Application granted granted Critical
Publication of CN106328389B publication Critical patent/CN106328389B/en

Links

Abstract

A kind of encapsulating structure of ultracapacitor, including:Substrate, multiple first pads are formed in the first face, first pad is electrically connected by the first electrode end of metal material and the second face in substrate, forms the second pad in the second side of substrate, and the second pad is electrically connected by the metal material in substrate with second electrode end;Multiple elargol layers, are configured on substrate, are electrically connected with the second pad;Ultracapacitor, the first welding electrode area is formed in a side on top and forms the second welding electrode area in another opposite end of bottom end, wherein, the second welding electrode area of ultracapacitor is electrically connected with elargol floor, and the first welding electrode area is electrically connected via metal wire and the first pad;Ultracapacitor is closed in lid region by lid.

Description

The encapsulating structure of ultracapacitor

Technical field

The present disclosure generally relates to a kind of encapsulating structures of passive component, in particular to a kind of encapsulation knot of ultracapacitor Structure.

Background technology

Ultracapacitor (supercapacitor;Ultracapacitor), it is called double layer capacitor (ElectricalDoule-LayerCapacitor), gold capacitance, farad capacitor are by polarized electrolytic matter come energy storage.By It is a kind of electrochemical assembly in ultracapacitor, but it is not chemically reacted during energy storage, therefore its thermal energy storage process It is reversible, also therefore so that ultracapacitor can be hundreds thousand of times with repeated charge.

Due to the progress of processing procedure, a 5V, 0.5 farad of ultracapacitor, size can be made into length about 15~20mm, width about 10~15mm and thickness about 1~1.5mm.However, in order to enable ultracapacitor in different environment The lower function of playing its component, meanwhile, for the demand supplied in response to different electric currents, need to generate via routing processing procedure different Electric current is supplied;Therefore, it in order to protect gold thread and ultracapacitor can be allowed to be isolated with external environment, therefore is sealed Dress.Due to, include electrolyte in ultracapacitor, therefore in encapsulation process, if when the temperature is excessively high, for example, carrying out reflow (reflow) when, since reflow temperature may need under 160~250 degree, continue 30 seconds;It may make in ultracapacitor Electrolyte vaporizes, and ultracapacitor is caused to explode in encapsulation process.

Invention content

To solve the problems, such as ultracapacitor in encapsulation process, it is an object of the invention to propose a kind of ultracapacitor Encapsulating structure, in addition to that can achieve the purpose that protect gold thread and other than ultracapacitor capable of being allowed to be isolated with external environment, and also It can solve the problems, such as that ultracapacitor generates explosion in reflow process;Super electricity is provided moreover it is possible to further reach The needs of container different voltages or current specification.Furthermore it is set in circuit or module or system since ultracapacitor is usually adapted to Input terminal, via the present invention gold thread configuration mode, can use this ultracapacitor as circuit system outside high current Protective device, the system to relaying configuration in ultracapacitor rear end, such as:Memory system servo-drive system or storage Energy system etc..

According to above-mentioned purpose, the invention discloses a kind of encapsulating structures of ultracapacitor, including:Substrate has first Face and opposite another the second opposite face in first face, are welded on first side in the first face of adjacent substrate, forming multiple first Point, and each first pad is electrical by the metal material in substrate and the first electrode end on first side in the second face Connection, and on the second side of opposite first side in the first face of adjacent substrate, forming multiple second pads, and each Second electrode end on the second side that second pad passes through another metal material and the second face in substrate is electrically connected; Multiple elargol layers, are configured on substrate, are electrically connected with each the second pad, and are extended at first end;It is super Capacitor, the bottom end with top and the opposite top other end, and in the side on top the first welding electrode area of formation, and in Bottom end is on opposite another opposite end of first side, one second welding electrode area of a formation, wherein the second of ultracapacitor Welding electrode area is electrically connected with each elargol floor, meanwhile, each first welding electrode area is via metal wire and each First pad is electrically connected;Lid has multiple peripheries and is formed by lid region by these peripheries, lid region via These peripheries and substrate connection, and ultracapacitor is closed in lid region.

According to above-mentioned purpose, the present invention then provides the encapsulating structure of another ultracapacitor, including:Substrate, tool Another the second opposite face for having the first face and opposite first face is formed on first side in the first face of adjacent substrate Multiple first pads, and each first pad pass through metal material and the second face in substrate the first side on One electrode tip is electrically connected, and on the second side of opposite first side in the first face of adjacent substrate, form multiple second Pad, and each second pad pass through another metal material and the second face in substrate the second side on second Electrode tip is electrically connected;Multiple elargol layers, are configured on substrate, are electrically connected with each the second pad, and be directed towards Extend at first end;Ultracapacitor, the bottom end with top and the opposed tips other end, and form the in a side on top One welding electrode area, and in bottom end the second welding electrode area is formed on the opposite another opposite end in first side, wherein super Second welding electrode area of capacitor is electrically connected with each elargol floor, meanwhile, each first welding electrode area is via gold Belong to line to be electrically connected with each first pad;Lid has a plurality of peripheries and is formed by lid area by these peripheries Domain, lid region are closed in via these peripheries and substrate connection, and by ultracapacitor in lid region, wherein each There are one through holes for tool on periphery;Adhesive layer is filled in lid region and each through hole, to by ultracapacitor And each metal line cladding.

According to the encapsulating structure of above-mentioned ultracapacitor, the present invention can be by the design of lid, as progress sealing When required mold can further decrease the cost of manufacture admittedly the expense of mold can be saved.

Description of the drawings

Figure 1A is the cut-away view of the ultracapacitor of the present invention.

Figure 1B is the top view of the ultracapacitor of the present invention and lower view.

Fig. 2A is the top view of the substrate of the present invention.

Fig. 2 B are the top view of the substrate of the present invention.

Fig. 2 C are the top view of the substrate of the present invention.

Fig. 2 D are the lower view of the substrate of the present invention.

Fig. 3 A are that ultracapacitor is formed in the sectional view on substrate.

Fig. 3 B are that ultracapacitor is formed in the top view on substrate.

Fig. 4 is the lid top view and sectional view of the present invention.

Fig. 5 is the sectional view that ultracapacitor completes encapsulation.

Fig. 6 A are the top view of another embodiment of lid of the present invention.

Fig. 6 B are the sectional view of another embodiment of lid of the present invention.

Fig. 7 A are the sectional view at injection molding of the present invention.

Fig. 7 B are the sectional view after injection molding of the present invention.

【Primary clustering symbol description】

10 ultracapacitors

101 first faces

103 second faces

12 first welding electrode areas

14 second welding electrode areas

20 substrates

201 first faces

203 second faces

22 first pads

24 second pads

26 elargol layers

28 electrodes

30 adhesion layers

40 gold threads

50 lids

52 lid regions

54 cutting lines

56 through holes

60 low temperature glues

Specific implementation mode

Institute's accompanying drawings of the present invention depicted structure, ratio, size etc., only to coordinate specification it is revealed in Hold, having usually intellectual for correlative technology field can be illustrated, therefore with following description, it is non-can to limit the present invention The qualifications of implementation are described in detail only for the realization in the ultracapacitor encapsulation process of the present invention.In addition, in Schema in following interior texts, does not also draw completely according to actual relative dimensions, acts on only in expression and feature of present invention Related schematic diagram.

Please refer to Fig.1 A and Figure 1B;Wherein, Figure 1A is the cut-away view of the ultracapacitor of the present invention;Figure 1B is of the invention The top view of ultracapacitor and lower view.

As shown in Figure 1A, it is a ultracapacitor 10 for having completed manufacture;In the present embodiment, ultracapacitor 10 Electrically for 5V, 4.7 millifarads (mF), size be length about 15mm, width about 10mm and thickness about 1.2mm.Meanwhile as schemed Shown in 1B, edge is leaned on the top of ultracapacitor 10 101, formed a first welding electrode area 12 (such as:Capacitance The positive terminal of device);And in the bottom end of ultracapacitor 10 103 by edge (being to be located at the opposite side edge for leaning on edge with top) Place, formed another the second welding electrode area 14 (such as:The negative pole end of capacitor);Wherein, these welding electrode areas Size can be selected as 5mmX5mm.

Then, A, Fig. 2 B, Fig. 2 C and Fig. 2 D are please referred to Fig.2;Wherein, Fig. 2A and Fig. 2 B be the present invention substrate on regard Figure;Fig. 2 C are the substrate top view of the present invention;And the lower view for the substrate that Fig. 2 D are the present invention.

As shown in Figure 2 A, it is a substrate 20 for having completed manufacture;In the present embodiment, in 20 first face of adjacent substrate On 201 the first side, multiple first pads 22 are formed, and each first pad 22 passes through the metal material in substrate It is electrically connected with the first electrode end 28 on first side in the second face 203, as shown in Figure 2 C, and first electrode end 28 can be selected Configuration is selected on first side in 20 second face 203 of adjacent substrate;Wherein, the width of each the first pad 22 be 10~ 20mil, and each distance of the first pad 22 separately is 20~50mil;In the preferred embodiment, each The width of a first pad 22 is 15mil, and each distance of the first pad 22 separately is 25mil.And in adjacent On second side of opposite first side in 20 first face 201 of substrate, multiple second pads 24, and each second weldering are formed Second electrode end 28 on the second side that contact 24 passes through metal material and the second face 203 in substrate 20 is electrically connected, such as Shown in Fig. 2 C, and second electrode end 28 can be with option and installment on second side in 20 second face of adjacent substrate;In addition, further Each second pad 24 to 20 interior direction of substrate (i.e. to the first side direction in the first face 201) extend and it is electrical Connect multiple elargol layers 26;In the preferred embodiment, the width of each the second pad is 15mil, and each The distance of a second pad separately is 25mil;In addition, multiple elargol layers 26 are to be formed in substrate 20 in a manner of wire mark On, and be electrically connected integrally with every 1 second pad 24 respectively, width is about 20mil, thickness about 1~10mil.This Outside, as shown in Figure 2 D, it is located at the ruler at the second electrode end 28 and second electrode end 28 in 20 second face of adjacent substrate, 203 two side ends It is very little to be selected as 5mmX5mm.At this point it is to be emphasized that the present invention use elargol layer 26 as with each the second pad 24 The major technique of electric connection, be by elargol layer 26 have glue characteristic, in addition to can for the second welding electrode area 14 and Each second pad 24 is formed outside good electric connection, can also further sticking together as cemented ultracapacitor 10 Material.

It is important to illustrate, in fig. 2, is electrically connected respectively with multiple second pads 24 using multiple elargol layers 26, Main is that can select the quantity using elargol layer 26 according to the demand of output current;However, if elargol layer 26 is to need When being electrically connected with each the second pad 24, can also select the elargol layer 26 using whole piece come with each second Pad 24 is electrically connected, as shown in Figure 2 B;Therefore it is to use multiple silver for elargol layer 26 and the electric connection of the second pad 24 Glue-line 26, or be all the embodiment that case of the present invention has disclosed using the elargol layer 26 of whole piece.

Followed by please referring to Fig.3 A and Fig. 3 B, wherein Fig. 3 A are the sectional views that ultracapacitor is formed on substrate;And Fig. 3 B are the top views that ultracapacitor is formed on substrate.

As illustrated in fig. 3, first, the present invention can select shape on 20 first face of substrate 201 multiple first pads On region between 22 and multiple elargol layers 26, adhesion layer 30 is formed;Then, by the bottom end of ultracapacitor 10 and adhesion layer 30 It is affixed, meanwhile, it needs bottom end 103 being electrically connected with each elargol floor 26 by the first welding electrode area 12 at edge, in turn So that the first welding electrode area 12 is electrically connected integrally with the second electrode end 28 on 20 second face 203 of substrate;Followed by making With routing processing procedure, by the of multiple first pads 22 and the top of ultracapacitor 10 on 20 first face 201 of substrate One welding electrode area 12 is electrically connected with a metal line 40, so that the first welding electrode area on 10 top of ultracapacitor 12 are electrically connected integrally with the first electrode end 22 on 20 second face of substrate;Wherein, it is in 40 material of metal wire of the present invention Gold.At this point it is to be emphasized that in an embodiment of the present invention, being electrically connected using the gold thread of 1mil diameters;Due to one The gold thread of 1mil diameters can load the electric current of 2A, therefore be that can be carried by ultracapacitor 10 in the present embodiment For the current loading of 10A.If necessary to the current loading of bigger, can select electrically to be connected using the gold thread of 1.2mil diameters It connects, because the gold thread of a 1.2mil diameter can load the electric current of 4A;Therefore in the present embodiment, being can be by super capacitor Device provides the current loading of 20A.Via the explanation of the present embodiment, it is evident that in the encapsulation process of ultracapacitor 10, It can according to the demand of user or specification is determined using several gold threads or using how thick gold thread come by the first face of substrate Multiple first pads 22 and the first welding electrode area 12 on the top of ultracapacitor 10 are electrically connected;Likewise, in substrate On the second pad 24 and elargol layer 26 quantity, also will be with adjustment;In this regard, the present invention is not limited thereto.

Furthermore it has become apparent that, via above-mentioned explanation, a plurality of interval rows can be formed on one piece of large-scale substrate Board structure as shown in Figure 2 A is arranged, and then the ultracapacitor of many such as Figure 1A is solidly connected to each board structure On;Then, it reuses routing processing procedure each ultracapacitor is electrically connected on each board structure.According to it is above-mentioned it Illustrate, multiple elargol layers 26 can be affixed by ultracapacitor 10, therefore, if further re-form on the base plate 20 glutinous Layer 30, it can be as the selection of manufacturing process.

Then, referring to FIG. 4, for lid top view and sectional view of the invention.As shown in figure 4, lid 50 can use The mode of ejection formation forms multiple lid regions 52 with accommodating space;Accurate design can be passed through so that each The accommodating space in lid region 52 can close be alternatively arranged and be electrically connected at one by one it is super on board structure Capacitor 10;Wherein, the material of lid 50 can select to use plastics or resin;Furthermore, it is possible to select the frame in lid 50 On be initially formed adhesion layer (not shown in the figures) after, it is affixed by this adhesion layer and substrate.And then via cutting processing procedure, example Such as:Laser is cut, and cuts into many ultracapacitors 10 for completing encapsulation.In addition, in the design of lid 50 of ejection formation, Its width on four peripheries can be designed in 0.5~1mm, and in an embodiment of the present invention, the width on 50 4 peripheries of lid Degree selection is in 0.5mm;And in the case where cutting line width about needs the situation of 1.2mm, therefore in other other than four peripheries frame width Selection is in 2.2mm;And the dotted line 54 in the 4th figure is the position for representing cutting line.Therefore work as the multiple with accommodating of ejection formation The lid region 52 in space can close a plurality of spaced ultracapacitors after alignment;Finally, via laser edge It after cutting line 54 cut, you can to complete the encapsulation of ultracapacitor, as shown in Figure 5.In addition, in the present embodiment, It is by 50 material of lid and the air in lid accommodating space as influence of the external temperature to ultracapacitor 10 is isolated.

Fig. 6 A and Fig. 6 B are please referred to, are the top view and sectional view of another embodiment of lid of the present invention.As shown in Figure 6A, It is identical that lid 50 forms multiple lid regions with Fig. 4 with ejection formation, and maximum difference is, further on every one side Through hole 56 is formed on frame intermediate region or frame bottom, width can be selected in 1~5mm;And in the present embodiment, it passes through The width of perforation 56 is selected at 2.5mm, as shown in Figure 6B.

Then, Fig. 7 A and Fig. 7 B are please referred to, are the sectional view after injection molding of the present invention and injection molding.As shown in Figure 7 A, when each A lid region 52 with accommodating space close the ultracapacitor 10 on each board structure and by this adhesion layer with After substrate 20 is affixed, with the sealing program that can carry out an injection molding (molding), wherein in injection lid region 52 Adhesive material can select low temperature glue.56 note of at least one through hole on lid 50 of the low temperature glue by ejection formation of injection Enter into the accommodating space in lid region 52, locates injection as shown in Fig. 7 A;With application pressure appropriate, can to inject Adhesive material be fully populated with into the accommodating space in lid region 52;When injection low temperature glue passing through in another side of lid 50 When perforation is overflowed, that is, represents low temperature glue and be fully populated with to lid region 52;Finally, after being toasted using heating appropriate, i.e., It can be by low temperature adhesive curing.Finally, after being cut along cutting line via laser, you can to complete the encapsulation of ultracapacitor, Such as Fig. 7 B.It will be apparent that the present invention by the lid of this ejection formation as mold, admittedly can save needed for traditional injection molding Mold, therefore the cost of manufacture can be further decreased.

Present invention embodiment above-mentioned is the envelope of the ultracapacitor with 5V, 4.7mF and offer current loading for 10A Dress;However, exposure according to the present invention, the ultracapacitor that can be directed to different size is packaged;Such as:Work as super capacitor When the voltage specification of device is 30V, the thickness of ultracapacitor may be made to increase, Gu the accommodating space in lid region at this time is deep Degree just has to be larger than the thickness of 30V ultracapacitors;In another example:When the load specification for needing offer 30A of ultracapacitor, The quantity of gold thread or the diameter of gold thread etc. can be adjusted by reach.

Although this creation is disclosed above with aforementioned preferred embodiment, so it is not limited to this creation, any to be familiar with This field those skilled in the art, in the spirit and scope for not departing from this creation, when can make it is a little change and retouch, therefore this creates it Scope of patent protection must regard subject to the appended claim institute defender of this specification.

Claims (10)

1. a kind of encapsulating structure of ultracapacitor, which is characterized in that including:
Substrate has another the second opposite face in the first face and relatively described first face, in first face of the substrate On first side, form multiple first pads, and each first pad by metal material in the substrate with First electrode end on first side in second face is electrically connected, and in the opposite of first face of the substrate On second side of first side, multiple second pads are formed, and each described second pad passes through the base Another metal material in plate is electrically connected with the second electrode end on second side in second face;
Elargol layer, is disposed on the substrate, and is electrically connected with second pad, and be to the first of first face Extend at side;
Ultracapacitor, the bottom end with top and the relatively described top other end, and formed in first side on the top First welding electrode area, and the second welding electrode area is formed on the relatively described another opposite end in first side in the bottom end, Wherein, second welding electrode area of the ultracapacitor is affixed with each elargol floor and is electrically connected, together When, metal wire and each first pad that each first welding electrode area is formed via routing processing procedure electrically connect It connects;And
There are lid multiple peripheries and the periphery to be formed by lid region, and the lid region is via the periphery and base Plate connects, and the ultracapacitor is closed in the lid region.
2. the encapsulating structure of ultracapacitor as described in claim 1, which is characterized in that the elargol layer is in a manner of wire mark It is formed on the substrate.
3. the encapsulating structure of ultracapacitor as claimed in claim 2, which is characterized in that the elargol layer is by multiple elargol Layer is formed, and each elargol layer is electrically connected with each second pad.
4. the encapsulating structure of ultracapacitor as described in claim 1, which is characterized in that the material of the metal wire is gold.
5. the encapsulating structure of ultracapacitor as described in claim 1, which is characterized in that the material of the lid be plastics or It is resin.
6. a kind of encapsulating structure of ultracapacitor, which is characterized in that including:
Substrate has another the second opposite face in the first face and relatively described first face, the first side in the first face of the substrate On end, multiple first pads are formed, and each first pad passes through metal material in the substrate and described the First electrode end on first side in two faces is electrically connected, and in the of relatively described first side in the first face of the substrate On two sides, multiple second pads are formed, and each second pad passes through another metal material in the substrate Material is electrically connected with the second electrode end on second side in second face;
Elargol layer, is disposed on the substrate, and is electrically connected with second pad, and be to the first of first face Extend at side;
Ultracapacitor, the bottom end with top and the relatively described top other end, and formed in first side on the top First welding electrode area, and in the bottom end on the relatively described another opposite end in first side, the second welding electrode area is formed, Wherein, second welding electrode area of the ultracapacitor is affixed with each elargol floor and is electrically connected, together When, metal wire and each first pad that each first welding electrode area is formed via routing processing procedure electrically connect It connects;And
There are lid multiple peripheries and the periphery to be formed by lid region, and the lid region is via the periphery and base Plate connects, and the ultracapacitor is closed in the lid region, wherein has through hole on each periphery;
Adhesive layer is filled in the lid region and each through hole, to by the ultracapacitor and each The metal wire cladding.
7. the encapsulating structure of ultracapacitor as claimed in claim 6, which is characterized in that the elargol layer is in a manner of wire mark It is formed on the substrate.
8. the encapsulating structure of ultracapacitor as claimed in claim 7, which is characterized in that the elargol layer is by multiple elargol Layer is formed, and each elargol layer is electrically connected with each second pad.
9. the encapsulating structure of ultracapacitor as claimed in claim 6, which is characterized in that the adhesive layer is kind of a low temperature glue.
10. the encapsulating structure of ultracapacitor as claimed in claim 6, which is characterized in that the material of the lid is plastics Or resin.
CN201510339116.2A 2015-06-17 2015-06-17 The encapsulating structure of ultracapacitor CN106328389B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510339116.2A CN106328389B (en) 2015-06-17 2015-06-17 The encapsulating structure of ultracapacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510339116.2A CN106328389B (en) 2015-06-17 2015-06-17 The encapsulating structure of ultracapacitor

Publications (2)

Publication Number Publication Date
CN106328389A CN106328389A (en) 2017-01-11
CN106328389B true CN106328389B (en) 2018-10-02

Family

ID=57733157

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510339116.2A CN106328389B (en) 2015-06-17 2015-06-17 The encapsulating structure of ultracapacitor

Country Status (1)

Country Link
CN (1) CN106328389B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101740235A (en) * 2008-11-25 2010-06-16 詹前疆 Packaging structure of energy storage element
CN101903963A (en) * 2007-12-18 2010-12-01 松下电器产业株式会社 Coin type electric double-layered capacitor, and capacitor-packaged element
CN102103932A (en) * 2009-12-21 2011-06-22 钰邦电子(无锡)有限公司 Capacitor encapsulation structure using surface mount technology
CN102428530A (en) * 2009-05-19 2012-04-25 如碧空佳里多株式会社 Surface Mounting Device And Capacitor Element
CN102709065A (en) * 2010-10-15 2012-10-03 精工电子有限公司 Electronic component and electronic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101903963A (en) * 2007-12-18 2010-12-01 松下电器产业株式会社 Coin type electric double-layered capacitor, and capacitor-packaged element
CN101740235A (en) * 2008-11-25 2010-06-16 詹前疆 Packaging structure of energy storage element
CN102428530A (en) * 2009-05-19 2012-04-25 如碧空佳里多株式会社 Surface Mounting Device And Capacitor Element
CN102103932A (en) * 2009-12-21 2011-06-22 钰邦电子(无锡)有限公司 Capacitor encapsulation structure using surface mount technology
CN102709065A (en) * 2010-10-15 2012-10-03 精工电子有限公司 Electronic component and electronic device

Also Published As

Publication number Publication date
CN106328389A (en) 2017-01-11

Similar Documents

Publication Publication Date Title
US20070264564A1 (en) Thin film battery on an integrated circuit or circuit board and method thereof
KR20100036315A (en) Solar cell module manufacturing method
CN100382211C (en) Solid electrolytic capacitor and its manufacture method
EP1265286A3 (en) Integrated circuit structure
JPH09246465A (en) Laminated chip package of loc type semiconductor chip
WO2008121293A3 (en) Solar module manufacturing processes
US9012264B2 (en) Integrated circuit package including embedded thin-film battery
TW200701453A (en) Manufacturing methods for thin film fuse phase change ram
CN103988283A (en) Interdigitated Foil Interconnect For Rear-Contact Solar Cells
WO2005053039A3 (en) Solar cell module
WO2010102151A3 (en) Chip-scale packaging with protective heat spreader
EP2472594A4 (en) Multi-junction photoelectric converter, integrated multi-junction photoelectric converter, and method for manufacturing same
TW200735331A (en) Electrically rewritable non-volatile memory element and method of manufacturing the same
US6190943B1 (en) Chip scale packaging method
EP2296188B1 (en) Terminal box and solar cell module
JP2013225712A (en) Manufacturing method of thin film solar cell
JP5686140B2 (en) Power storage device
CN103597915B (en) Metal foil patterned-laminate, metal foil laminate, metal foil laminate substrate, solar cell module and manufacturing method for metal foil patterned-laminate
US20150179989A1 (en) Flexible battery pack
CN103715374A (en) Secondary battery
JP5879513B2 (en) Solar cell module
EP2033247B1 (en) Thin film battery on an integrated circuit or circuit board and method thereof
CN103443934B (en) Solar module, the manufacture method of solar module, it is equipped with the reel package body of joint line
JP2016174191A (en) Solar battery module and manufacturing method for the same
JP2005159173A (en) Wiring material for connecting solar cell element and solar cell module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 200233 Shanghai city Xuhui District 7 Guangxi Jinglu No. 3 Building 5 floor

Applicant after: Crown Research (Shanghai) Patent Technology Co., Ltd.

Address before: 200233 Shanghai city Xuhui District 7 Guangxi Jinglu No. 3 Building 5 floor

Applicant before: Hat grinds (Shanghai) Consultancy for Enterprise Management Co., Ltd

GR01 Patent grant
GR01 Patent grant