CN106324938A - Silicon-based modulator - Google Patents
Silicon-based modulator Download PDFInfo
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- CN106324938A CN106324938A CN201510347224.4A CN201510347224A CN106324938A CN 106324938 A CN106324938 A CN 106324938A CN 201510347224 A CN201510347224 A CN 201510347224A CN 106324938 A CN106324938 A CN 106324938A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
Abstract
The invention provides a silicon-based modulator. The silicon-based modulator comprises an optical circuit selector, two groups of waveguides and an optical coupler. The optical circuit selector is used for receiving input light and controlling light to input into a first group of waveguides and a second group of waveguides under control of an electric signal. One ends of the first group of waveguides and the second group of waveguides are connected with the optical circuit selector and the other ends are connected to the optical coupler. The first group of waveguides or the second group of waveguides is used for outputting light into the optical coupler. The optical paths of the first group of waveguides and the second group of waveguides are not the same. The difference between the optical paths corresponds to the phase difference to be obtained. The silicon-based modulator has following beneficial effects: the silicon-based modulator is featured by high modulation efficiency, high modulation speed and high extinction ratio and can save the size of a silicon chip.
Description
Technical field
The present invention relates to silicon integreted phontonics field, particularly relate to a kind of silicon-based modulator.
Background technology
After microelectric technique grows up, as predicting according to Moore's Law always, " semiconductor chip
Integrated level within every 18 months, double, price then reduces half.But ", now based on silicon
Microelectric technique become closer to physics limit, be difficult to continue to follow Moore's Law and develop.With
Time, at optical communication field, it is constantly subjected to optical device high power consumption, high cost, the puzzlement of large volume etc..Silicon
Arising at the historic moment of photon technology, can solve many difficult problems of microelectronic and optical communication field simultaneously.
Silicon photon technology is exactly that the maturation process with quasiconductor i.e. produces electronic device, produces again photonic device.But
Be, the industrialization of silicon photon technology to be realized there is also much want could difficulty, wherein, silica-based modulation
Device is exactly maximum difficult point.
The cardinal principle that realizes of manipulator is that the refractive index controlled in light path by external signal is changed,
So that the phase place of light output changes, reach the purpose of modulation.One Luciola substriata is capable of phase place
Modulation, then MZ (Mach-Zehnder, the Mach-Ze De) structure of two Luciola substriata compositions, logical
The bias point crossing control MZ structure just can realize phase-modulation and intensity modulated, the QPSK in optic communication
(Quadrature Phase Shift Keying, QPSK) signal is namely based on such structure.
So, the waveguide of an output phase place that can change light according to the signal of telecommunication in real time, i.e. phase-modulator is
The key of modulator.In silicon based system, electrooptic effect is more weak, although thermo-optic effect is notable,
But its modulation rate is very slow, the tune of plasma dispersion (Plasma Dispersion is called for short PD) effect
Efficiency processed is of a relatively high, and modulation rate also has greatly improved, thus is of considerable interest.Utilize PD
The manipulator of effect design substantially can be divided into: carrier pouring-in (pin structure), carrier depletion
Formula (pn nodule structure), mos capacitance formula.The number of carrier directly affects light refraction in the waveguide
Rate, and then impact output phase place, this type of manipulator is through external electric signal and controls the change of carrier,
And then realize phase-modulation, but there is a lot of restriction, due to the change of carrier in the manipulator of this type
Region overlaps fewer with light field, and modulation efficiency is the lowest.People, often through increasing device length, come
To little Vπ(making the voltage needed for light path delay phase π), but, device is long can affect modulation
Speed.Modulation rate to be ensured, has to so that VπIncrease.People devise finger-inserting type modulation successively
Device, U-shaped PN joint manipulator etc., but it is the highest to still suffer from modulation rate, and modulation voltage is excessive, disappears
Light is than the problem such as too low.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of silicon-based modulator, to improve modulation efficiency.
In order to solve above-mentioned technical problem, the invention provides a kind of silicon-based modulator, wherein, including:
Light path selector, two groups of waveguides and photo-coupler, wherein,
Described light path selector, is used for receiving input light, under the control of the signal of telecommunication, controls light and is input to
First group of waveguide or be input to second group of waveguide；
Described first group of waveguide and described second group of waveguide, one end is connected with described light path selector, another
End connects described photo-coupler, and light is exported to described light by described first group of waveguide or described second group of waveguide
Bonder, by the coupling output of described photo-coupler, described first group of waveguide and the light of described second group of waveguide
Journey is unequal, and its optical path difference is corresponding to phase contrast to be obtained.
Further, above-mentioned silicon-based modulator also has a following feature:
Described first group of waveguide is a Luciola substriata, and described second group of waveguide is a Luciola substriata, described first group
The length of waveguide and described second group of waveguide is unequal, and length difference is corresponding with described optical path difference.
Further, above-mentioned silicon-based modulator also has a following feature:
Described first group of waveguide includes that a Luciola substriata, described second group of waveguide include a Luciola substriata,
Described first group of waveguide accesses in a phase controller, or described second group of waveguide and access a phase
Level controller, or described first group of waveguide and described second group of waveguide be respectively connected to a phase controlling
Device.
Further, above-mentioned silicon-based modulator also has a following feature:
Described first group of waveguide includes two articles of first wave guides that length is equal and output light field phase place is identical and
Four waveguides, described first wave guide and described 4th waveguide composition MZ structure,
Described second group of waveguide includes two articles of second waveguide that length is equal and output light field phase place is identical and
Three waveguides, described second waveguide and described 3rd waveguide composition MZ structure,
The length of the waveguide in described first group of waveguide and the waveguide in described second group of waveguide is unequal, and
Length difference is corresponding with described optical path difference, described first group of waveguide and described second group of waveguide output light field phase place
On the contrary.
Further, above-mentioned silicon-based modulator also has a following feature:
Described first group of waveguide includes two articles of first wave guides that length is equal and output light field phase place is identical and
Four waveguides, described first wave guide and described 4th waveguide composition MZ structure,
Described second group of waveguide includes two articles of second waveguide that length is equal and output light field phase place is identical and
Three waveguides, described second waveguide and described 3rd waveguide composition MZ structure,
In described first wave guide, described second waveguide, described 3rd waveguide and described 4th waveguide one
A phase controller, described first group of waveguide and described second group of waveguide output is accessed on bar or many Luciola substriata
Light field opposite in phase.
Further, above-mentioned silicon-based modulator also has a following feature:
Described light path selector includes the first micro-loop structure and the second micro-loop structure, described first micro-loop structure
One end be connected with the Luciola substriata in described first group of waveguide, the other end of described first micro-loop structure with
A Luciola substriata in described second group of waveguide connects, one end of described second micro-loop structure and described first group
In waveguide, another Luciola substriata connects, in the other end of described second micro-loop structure and described second group of waveguide
Another Luciola substriata connects.
Further, above-mentioned silicon-based modulator also has a following feature:
Described light path selector uses micro-loop structure, when described micro-loop structure is under resonance condition, controls
Light passes through one group of waveguide, when described micro-loop structure is under Nonresonant natural vibration, controls light and organizes ripple by another
Lead.
Further, above-mentioned silicon-based modulator also has a following feature:
Described micro-loop structure includes phase controller or the phase controlling of mos capacitance structure of PN nodule structure
Device.
To sum up, the present invention provides a kind of silicon-based modulator, has high modulate efficiency, high modulation rate, height
The feature of extinction ratio, and the volume of silicon can be saved.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the silicon-based modulator of the embodiment of the present invention one；
Fig. 2 is the schematic diagram of the silicon-based modulator of the embodiment of the present invention two；
Fig. 3 is the schematic diagram of the silicon-based modulator of the embodiment of the present invention three；
Fig. 4 a and the schematic diagram of silicon-based modulator that Fig. 4 b is the embodiment of the present invention four；
Fig. 5 is the schematic diagram of the silicon-based modulator of the embodiment of the present invention five.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing
Embodiments of the invention are described in detail.It should be noted that in the case of not conflicting, this Shen
Embodiment in please and the feature in embodiment can mutual combination in any.
The silicon-based modulator of the embodiment of the present invention includes: light path selector, two groups of waveguides and photo-coupler,
Wherein,
Described light path selector, is used for receiving input light, under the control of the signal of telecommunication, controls light and is input to
First group of waveguide or be input to second group of waveguide；
Described first group of waveguide and described second group of waveguide, one end is connected with described light path selector, another
End connects described photo-coupler, and light is exported to described light by described first group of waveguide or described second group of waveguide
Bonder, by the coupling output of described photo-coupler, described first group of waveguide and the light of described second group of waveguide
Journey is unequal, and its optical path difference is corresponding to phase contrast to be obtained.
Because, phase contrast=2 π/wavelength * optical path difference, it is possible to realize phase place by controlling optical path difference
Modulation.
What the present invention proposed is a kind of brand-new modulator design theory, does not recycle various effect and changes light
Transmission phase place, but in silicon based system design two Length discrepancy waveguide, waveguide afterbody by coupling
Device coupling output, length difference is the length needed for the phase contrast gone for, and utilizes light path selector (Optic
Switch) make light pass through any of which waveguide according to adjusted signal, thus realize the phase-modulation of light.
The manipulator that our this principle realizes is called light path selection type manipulator (Waveguide Selecting
Modulator, is called for short WSM).
In view of the fabrication error in silicon optical waveguide manufacturing process, the arm of two Length discrepancy may not be complete
Realize desired phase poor, in two arms, or one arm in office can add phase controller (phase
Shift, is called for short PS) obtain the phase contrast that two-arm is fixing.
The silicon-based modulator of the embodiment of the present invention has low modulation voltage, High Extinction Ratio, high modulation rate,
The advantage that volume is less, can meet the requirement of silicon light long range propagation.
With several specific embodiments, the silicon-based modulator of the present invention is described in detail below.
Embodiment one
In the present embodiment, described first group of waveguide is a Luciola substriata, and described second group of waveguide is a Luciola substriata,
The length of described first group of waveguide and described second group of waveguide is unequal, and length difference and described optical path difference pair
Should.
As shown in Figure 1: light is assigned to waveguide Select1 or Select2 through Optic switch,
Then by optic coupler (photo-coupler) coupling output.Wherein waveguide Select1 and Select2
Between length difference can accurately control, in silica-based waveguides, when the length difference of two-arm is 270nm, produce
Fixing π phase contrast.In view of the character of silicon materials, its phase contrast with wavelength and temperature change almost
It is not changed in.
Embodiment two
In the present embodiment, described first group of waveguide includes that a Luciola substriata, described second group of waveguide include one
Waveguide, accesses in described first group of waveguide and accesses one in a phase controller, or described second group of waveguide
Phase controller, or described first group of waveguide and described second group of waveguide be respectively connected to a phase place control
Device processed.
Fabrication error in view of different production lines, it may be considered that design the isometric or two-arm of Length discrepancy,
To a wherein arm, (or two-arm adds the phase place control of heater (hot phase-shifter) etc. as shown in Figure 2)
Device processed realizes the phase contrast of two-arm, this control be slow become do not affect modulating performance, it is possible to think two-arm
There is fixed skew.
So, light is adjusted through Select1 as Optic switch, it is thus achieved that π phase place, as Optic switch
Adjust light through Select2, it is thus achieved that 0 phase place.The signal of telecommunication controls the light path of Optic switch and selects,
Just can realize the modulation of phase place 0 and π.
The phase contrast of WSM is fixing (can to obtain arbitrary phase place wanted by phase control device
Difference), the speed of manipulator is solely dependent upon the speed of Optic switch, due to the optical coupling of two groups of waveguides
Exporting as signal source, two-way light phase is contrary, even if so Optic switch extinction ratio is inadequate, this
Manipulator can also obtain high extinction ratio.
Embodiment three
The Optic switch of WSM can use micro-loop structure, as it is shown on figure 3, when micro-loop meets resonance
During condition, light is coupled to waveguide Select1 by micro-loop, it is thus achieved that phase place π.Resonance condition quilt when micro-loop
During destruction, light directly passes through Select2, it is thus achieved that phase place 0.
In order to obtain high modulation rate, micro-loop can use the phase controller of PN nodule structure, passes through
Signal controls the variations in refractive index of micro-loop.Under certain wavelength, when signal is 1, micro-loop is in resonance condition
Under (heater (hot phase-shifter) equal controller can be added outside micro-loop so that be now constantly in resonance
Under the conditions of), light passes through Select2, phase modulation π.When signal is 0, micro-ring resonance condition is destroyed,
Light passes through Select1, phase modulation 0.
Character according to micro-loop is it is recognised that the resonance condition of micro-loop is easily broken.General need to make
Obtain micro-loop internal phase place change π/10 and be obtained with the extinction ratio of more than 20dB.In suitable micro-loop week
In the case of length, required modulation voltage is not over 2V.Compare minimum with the modulation voltage of existing manipulator
4V, the situation of extinction ratio maximum 10dB is the most a lot.
Embodiment four
In the present embodiment, described first group of waveguide includes two, and length is equal and output light field phase place is identical
First wave guide and the 4th waveguide, described first wave guide and described 4th waveguide composition MZ structure,
Described second group of waveguide includes two articles of second waveguide that length is equal and output light field phase place is identical and
Three waveguides, described second waveguide and described 3rd waveguide composition MZ structure,
The length of the waveguide in described first group of waveguide and the waveguide in described second group of waveguide is unequal, and
Length difference is corresponding with described optical path difference, described first group of waveguide and described second group of waveguide output light field phase place
On the contrary.It is of course also possible in described first wave guide, described second waveguide, described 3rd waveguide and described
A phase controller is accessed to control optical path difference in one or more waveguide in 4th waveguide.
The silicon-based modulator of the both arms of the embodiment of the present invention as shown in figures 4 a and 4b, in Fig. 4 a, two groups
Four Luciola substriata in waveguide connect into a 4*1 bonder, two ripples in Fig. 4 b, in first group of waveguide
Connecting into a 2*1 bonder, the waveguide in second group of waveguide accesses another 2*1 bonder, then
The outfan of the two 2*1 bonder accesses a 2*1 bonder.
The MZ structure of this WSM composition is by the effective control to length difference so that the upper and lower two-arm of MZ
Select1 between homophase between homophase, Select2.And anti-phase between Select1 and Select2, that
After Optic switch selects Select1 path, the MZ structure of the Select1 composition of two-arm of reaching the standard grade is in
Coherent phase long status, phase place is 0, after Optic switch selects Select2 path, the Select2 of two-arm of reaching the standard grade
The MZ structure of composition is similarly in coherent phase long status, and phase place is π, and this structure can improve extinction ratio.
Meanwhile, the phase place that the WSM of both arms causes when can eliminate the rise and fall of the signal of telecommunication is inaccurate.
Embodiment five
In the present embodiment, on the basis of embodiment four, described light path selector includes the first micro-loop structure
With the second micro-loop structure, one end of described first micro-loop structure and the Luciola substriata in described first group of waveguide
Connecting, the other end of described first micro-loop structure is connected with the Luciola substriata in described second group of waveguide, institute
The one end stating the second micro-loop structure is connected with another Luciola substriata in described first group of waveguide, described second micro-loop
The other end of structure is connected with another Luciola substriata in described second group of waveguide.
Equally, the Optic switch of the WSM of both arms can also use micro-loop structure.As it is shown in figure 5,
The power of walking along the street up and down in view of micro-loop structure is unbalanced, and only the new type of modulation device of single armed forms
Phase modulation system, has fluctuating after the output of out of phase information.And the novel tune of this micro-loop structure
Device MZ structure output power processed is the upper walking along the street superposition with the lower walking along the street of another micro-loop of a micro-loop,
So output balance and stability, and extinction ratio can be improved.
Meanwhile, the through (up) of micro-loop and the phase contrast on drop (descending) road can be along with wavelength
Change and change.But, it is considered to each MZ structure output be all the through road of a micro-loop
Superimposed with the drop road of another micro-loop, though the dephased appearance of the WSM of both arms, simply meeting
Making to grow mutually less abundant, two phase informations of output are still that contrary.With in MZ manipulator,
Modulation voltage is often below VπSituation be the same, 0 phase place and π phase place still can exist.
As it is shown in figure 5, light is through the coupler 101 of device 1:2, light is divided into two-way, respectively enters
Micro-loop 102 and micro-loop 103, the light of upper arm is connected with the through end of micro-loop 102, simultaneously and waveguide
106 are connected, and the light of underarm is connected with the through end of micro-loop 103, are connected with waveguide 108 simultaneously, micro-
The drop end of ring 102 is connected with waveguide 105, and the drop end of micro-loop 103 is connected with waveguide 107.Ripple
Lead 105,106,107 and 108 through 4*1 bonder 104 couple output.
By design, waveguide 105 and waveguide 107 are isometric, export phase.Waveguide 106 and waveguide
108 is isometric, exports phase, and the length of Select1 and Select2 is unequal, and length difference determines phase
Potential difference, modulates for using this manipulator to be used as QPSK signal, it is required that its phase contrast is π, that
Length differenceWherein, λ is the optical wavelength propagated, and n is the effective refractive index of waveguide.?
In silica-based waveguides, the effective refractive index n=2.443 of strip (rectangle) the type waveguide of a size of 500*220nm,
λ=1550nm, then △ L=317.2nm with delay phase π, and can vary less at C-band.
Fig. 5 is only an example, in actual applications, the input of upper and lower micro-loop can in any combination,
Such as, light can be simultaneously entered micro-loop and the through end of lower micro-loop, it is also possible to is simultaneously entered micro-
The through end of ring and the drop end of lower micro-loop, it is also possible to be simultaneously entered micro-loop drop end and under micro-
The through end of ring, it is also possible to be simultaneously entered micro-loop and the drop end of lower micro-loop.
Micro-loop 102 and micro-loop 103 can use PN nodule structure or mos capacitance structure to reach very fast
Modulation rate.As a example by PN nodule structure, bias voltage could be arranged to-2V, and signal voltage is
So state for PN joint is exactly 0V and-4V two kinds.
The signal of telecommunication of two micro-loop uses differential signal, it may be assumed that up and down during micro-loop modulation 2V and-2V respectively,
When micro-loop 102 modulates 0V voltage, it is in resonance condition, light through the drop end of micro-loop and waveguide 105,
Micro-loop 103 modulates-4V, the resonance condition of micro-loop 103 be destroyed, light through micro-loop through end and
Waveguide 108, i.e. Select1 are selected, and phase modulation is π；Micro-loop modulation-2V and 2V respectively up and down
Time, micro-loop 102 modulates-4V voltage, and its resonance condition is destroyed, light through micro-loop through end and
Waveguide 106, micro-loop 103 modulates 0V, and micro-loop 103 is in resonance condition, and light is through the drop of micro-loop
End and waveguide 107, i.e. Select2 are selected, and phase modulation is 0.
Owing to modulated signal is for statistics, the probability of modulation 2V and-2V is the same, then in micro-loop
Drop end output maximum time, micro-loop is controlled in resonance condition.The through end of same micro-loop
Separating a part of light to detect, when detecting light mean power minimum, micro-loop is offset to resonance condition (certain
During level signal, being in resonance, another signal is off-resonance).Through end is selected to carry out detection anti-
Feedback is rational, because the luminous power of micro-loop through end own is bigger than drop end, to through
End light splitting can accomplish the two-port Output optical power balance that Photoelectric Detection can be again.
One of ordinary skill in the art will appreciate that all or part of step in said method can pass through program
Instructing related hardware to complete, described program can be stored in computer-readable recording medium, as read-only
Memorizer, disk or CD etc..Alternatively, all or part of step of above-described embodiment can also use
One or more integrated circuits realize.Correspondingly, each module/unit in above-described embodiment can use
The form of hardware realizes, it would however also be possible to employ the form of software function module realizes.The present invention is not restricted to appoint
The combination of the hardware and software of what particular form.
These are only the preferred embodiments of the present invention, certainly, the present invention also can have other various embodiments,
In the case of without departing substantially from present invention spirit and essence thereof, those of ordinary skill in the art work as can be according to this
Various corresponding change and deformation are made in invention, but these change accordingly and deformation all should belong to the present invention
Appended scope of the claims.
Claims (8)
1. a silicon-based modulator, it is characterised in that including: light path selector, two groups of waveguides and optocoupler
Clutch, wherein,
Described light path selector, is used for receiving input light, under the control of the signal of telecommunication, controls light and is input to
First group of waveguide or be input to second group of waveguide；
Described first group of waveguide and described second group of waveguide, one end is connected with described light path selector, another
End connects described photo-coupler, and light is exported to described light by described first group of waveguide or described second group of waveguide
Bonder, by the coupling output of described photo-coupler, described first group of waveguide and the light of described second group of waveguide
Journey is unequal, and its optical path difference is corresponding to phase contrast to be obtained.
2. silicon-based modulator as claimed in claim 1, it is characterised in that:
Described first group of waveguide is a Luciola substriata, and described second group of waveguide is a Luciola substriata, described first group
The length of waveguide and described second group of waveguide is unequal, and length difference is corresponding with described optical path difference.
3. silicon-based modulator as claimed in claim 1, it is characterised in that:
Described first group of waveguide includes that a Luciola substriata, described second group of waveguide include a Luciola substriata,
Described first group of waveguide accesses in a phase controller, or described second group of waveguide and access a phase
Level controller, or described first group of waveguide and described second group of waveguide be respectively connected to a phase controlling
Device.
4. silicon-based modulator as claimed in claim 1, it is characterised in that:
Described first group of waveguide includes two articles of first wave guides that length is equal and output light field phase place is identical and
Four waveguides, described first wave guide and described 4th waveguide composition MZ structure,
Described second group of waveguide includes two articles of second waveguide that length is equal and output light field phase place is identical and
Three waveguides, described second waveguide and described 3rd waveguide composition MZ structure,
The length of the waveguide in described first group of waveguide and the waveguide in described second group of waveguide is unequal, and
Length difference is corresponding with described optical path difference, described first group of waveguide and described second group of waveguide output light field phase place
On the contrary.
5. silicon-based modulator as claimed in claim 1, it is characterised in that:
Described first group of waveguide includes two articles of first wave guides that length is equal and output light field phase place is identical and
Four waveguides, described first wave guide and described 4th waveguide composition MZ structure,
Described second group of waveguide includes two articles of second waveguide that length is equal and output light field phase place is identical and
Three waveguides, described second waveguide and described 3rd waveguide composition MZ structure,
In described first wave guide, described second waveguide, described 3rd waveguide and described 4th waveguide one
A phase controller, described first group of waveguide and described second group of waveguide output is accessed on bar or many Luciola substriata
Light field opposite in phase.
6. the silicon-based modulator as described in claim 4 or 5, it is characterised in that:
Described light path selector includes the first micro-loop structure and the second micro-loop structure, described first micro-loop structure
One end be connected with the Luciola substriata in described first group of waveguide, the other end of described first micro-loop structure with
A Luciola substriata in described second group of waveguide connects, one end of described second micro-loop structure and described first group
In waveguide, another Luciola substriata connects, in the other end of described second micro-loop structure and described second group of waveguide
Another Luciola substriata connects.
7. the silicon-based modulator as described in any one of claim 1-5, it is characterised in that:
Described light path selector uses micro-loop structure, when described micro-loop structure is under resonance condition, controls
Light passes through one group of waveguide, when described micro-loop structure is under Nonresonant natural vibration, controls light and organizes ripple by another
Lead.
8. silicon-based modulator as claimed in claim 7, it is characterised in that:
Described micro-loop structure includes phase controller or the phase controlling of mos capacitance structure of PN nodule structure
Device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510347224.4A CN106324938A (en) | 2015-06-19 | 2015-06-19 | Silicon-based modulator |
| PCT/CN2016/083038 WO2016202146A1 (en) | 2015-06-19 | 2016-05-23 | Silicon-based modulator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510347224.4A CN106324938A (en) | 2015-06-19 | 2015-06-19 | Silicon-based modulator |
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| CN114297133A (en) * | 2021-11-26 | 2022-04-08 | 军事科学院系统工程研究院网络信息研究所 | Path programmable multifunctional microwave photon signal processing method |
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|---|---|---|---|---|
| EP3641257B1 (en) * | 2018-10-18 | 2021-07-28 | Nokia Solutions and Networks Oy | Phase-shift keying structures |
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