CN106164778A - Estimate deformation and/or the change of its position of patterning device - Google Patents

Estimate deformation and/or the change of its position of patterning device Download PDF

Info

Publication number
CN106164778A
CN106164778A CN201580019619.XA CN201580019619A CN106164778A CN 106164778 A CN106164778 A CN 106164778A CN 201580019619 A CN201580019619 A CN 201580019619A CN 106164778 A CN106164778 A CN 106164778A
Authority
CN
China
Prior art keywords
patterning device
relative
pattern
edge
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201580019619.XA
Other languages
Chinese (zh)
Other versions
CN106164778B (en
Inventor
拜尔拉克·摩艾斯特
P·A·戴尔马斯特罗
约翰内斯·昂伍李
A·M·范德维伦
C·C·沃德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
ASML Netherlands BV
Original Assignee
ASML Holding NV
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV, ASML Netherlands BV filed Critical ASML Holding NV
Publication of CN106164778A publication Critical patent/CN106164778A/en
Application granted granted Critical
Publication of CN106164778B publication Critical patent/CN106164778B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Abstract

The deviation post of deformation and/or patterning device for determining patterning device provides a kind of system and method.Described system includes: the first sensing subsystem, and described first sensing subsystem measures the respective position of the multiple reference markers on patterning device；With the second sensing subsystem, described second sensing subsystem measures the position relative to support member, the edge of patterning device.Described system also includes controller, described controller in order to: the respective position of measurement based on the labelling on patterning device determines the absolute position of patterned features and the change of absolute position, determine the change of relative position at the edge of patterning device based on the marginal position measured, and estimate that patterning device over a time period is relative to the change of the position of support member and the change of the pattern distortions of the patterned features of patterning device.

Description

Estimate deformation and/or the change of its position of patterning device
Cross-Reference to Related Applications
The application is involved in the U.S. Provisional Application 61/985,222 submitted on April 28th, 2014, and it is by reference of text It is expressly incorporated herein.
Technical field
It relates to the change of a kind of deformation estimating patterning device and/or its position in the lithographic apparatus Measurement system and measuring method.
Background technology
Lithographic equipment is that desirable pattern is applied on substrate by one, it is common that the machine on the target part of substrate.Example As, lithographic equipment can be used in the manufacture of integrated circuit (ICs).In such a case, it is possible to alternatively referred to as mask Or the patterning device of mask is for generating to be formed in the circuit pattern on the monolayer of described IC.This pattern can be turned Move on on the target part (such as, including a part of tube core, one or more tube core) on substrate (such as, silicon wafer).Described The transfer of pattern is typically by being imaged onto by pattern on radiation-sensitive materials (resist) layer provided on substrate.Generally, Single substrate will comprise the network of the adjacent target portions being formed continuously pattern.Known lithographic equipment includes: so-called stepping Machine, in described stepper, by being exposing on described target part radiate each target part by whole pattern； And so-called scanning device, in described scanning device, by radiant flux along assigned direction (" scanning " direction) scan described pattern, Radiate each target part along substrate described in parallel with the direction or antiparallel scanning direction simultaneously.It is likely to pass through The mode of imprint patterns (imprinting) to substrate is transferred the pattern onto substrate from patterning device.
The critical performance parameters of arbitrary photoetching process (in particular for the photoetching process of manufacture of semiconductor device) is institute The overlap of meaning.Overlapping can being positioned directly in for the feature in the pattern of application is applied at identical lining in step in the early time Precision (or error) on the top of the feature of the cooperation at the end.Modern photoetching process can apply many measurements, modeling and Correction step is to eliminate the error source in the location of feature, to realize the overlap of only several nanometers.Property along with lithographic equipment Can raising, such as just become weight by the be heated deformation of the mask caused of the clamping stress during exposure, sagging and mask The folded limiting factor improved.
The deformation of mask is produced owing to mask is heated.Thermal stress causes pattern in the plane (X and Y-direction) of mask Interior distortion, causes pattern to move in X/Y plane.Existing method does not provide the measurement of many this deformation, lets alone this The correction of the distortion in kind plane.Labelling is used on mask to measure some in these deformation, but it is flat to measure many The means of the distortion in face are not readily available.The measurement of these labellings can not be carried out in the exposure process of mask, therefore mark Remember the most measured, cause production loss.The most several labellings are measured, therefore the essence of the deformation of the pattern of mask Degree is made a concession.Mask including, the labelling added will cause bigger production loss to improve precision, because measuring figure The time needed for additional labelling in case will tend to reducing the yield of lithographic equipment.
Therefore, measuring additional labelling is not optimal to determine and compensate for the distortion in the plane of mask.
Summary of the invention
Accordingly, it is desired to provide one can measure to estimate that the patterns such as such as mask are formed from patterning device The distortion of device or patterning device are relative to the change of the position of support member, thus the side that exposure technology is modified Method.
In one embodiment, it is provided that the position of a kind of deformation determining patterning device or patterning device The method of movement.Described patterning device has the edge between two first type surfaces and patterned features, in operation Radiant flux is used to irradiate described patterned features, to give radiant flux by pattern in the cross section of radiant flux.Described method bag Include: measure the respective position of multiple reference markers relative to reference coordinate system and reference timekeeping system, to determine patterning The absolute position of part, the week of the patterned features that plurality of reference marker is distributed in the outer peripheral portion of patterning device Enclose；Measure the position relative to the support member arranged for keeping patterning device, the edge of patterning device；At pattern After formation device operates a period of time, again measure the position relative to support member, the edge of patterning device；With based on The respective position of the measurement of multiple reference markers, the position of measurement at edge of patterning device and the limit of patterning device The position again measured of edge, on described a period of time of patterning device operation, by patterning device relative to propping up At least one in the pattern distortions of the change of the position of support member and the patterned features of patterning device is estimated as pattern shape Become the change of the absolute position of the patterned features of device.
In another embodiment, it is provided that a kind of deformation determining patterning device or the position of patterning device The method of movement.Described patterning device has patterned features, uses radiant flux to irradiate described patterning in operation Part, to give radiant flux by pattern in the cross section of radiant flux.Described method includes: by not having exposing patterns to be formed The respective position measuring the multiple reference markers on patterning device during the patterned features of device determines that pattern is formed In the change of the absolute position of the absolute position of the patterned features of device and the patterned features of patterning device at least One；By when there is no the patterned features of exposing patterns formation device and at the target part using radiant flux exposure substrate During measure the position relative to the support member arranged for keeping patterning device, the edge of patterning device, really Determining the change of the relative position at the edge of patterning device, wherein said radiant flux forms dress by pattern in a lithographic process Put and be patterned；With absolute position based on patterned features, patterned features absolute position determined by change and scheme At least one in changing determined by the relative position at the edge that case forms device estimates that pattern is formed over a time period Device relative in the change of the change of the position of support member and the pattern distortions of the patterned features of patterning device extremely Few one.
In yet another embodiment, it is provided that a kind of deformation for determining patterning device or patterning device The measurement system of the movement of position.Described patterning device has patterned features, uses radiant flux to irradiate institute in operation State patterned features, to give radiant flux by pattern in the cross section of radiant flux.Described system includes the first sensing subsystem, Described first sensing subsystem includes multiple first sensor, and the plurality of first sensor is measured on patterning device many The respective position of individual reference marker.Described system also includes that the second sensing subsystem, described second sensing subsystem include one Individual or multiple second sensors, the edge of the one or more the second sensor measurement patterning device is relative to for keeping Patterning device and the position of support member that arranges.Further, described system also includes controller, and described controller is in order to base The respective position of the measurement of the multiple reference markers on patterning device determines the patterned features of patterning device At least one in the change of the absolute position of the patterned features of absolute position and patterning device, forms dress based on pattern The edge put determines patterning device relative to the position of the measurement of the support member arranged for keeping patterning device The change of the relative position at edge, and absolute position of based on patterned features, the determination of absolute position of patterned features At least one estimation in the change of the determination changing the relative position with the edge of patterning device is schemed over a time period Case forms device relative to the change of the position of support member and the change of the pattern distortions of the patterned features of patterning device In at least one.
In a further embodiment, it is provided that a kind of lithographic equipment, including: irradiation system, described irradiation system is joined It is set to regulate radiant flux；Support member, described support member is configured to support patterning device, and described patterning device can Radiant flux is given by pattern, to form the radiant flux of patterning in the cross section of radiant flux；Substrate table, described substrate table is by structure Make as keeping substrate；Optical projection system, the radiant flux that described optical projection system is configured to will be patterned into projects to the target portion of substrate On Fen；With the system of measurement.Described measurement system includes that the first sensing subsystem, described first sensing subsystem include multiple first Sensor, the plurality of first sensor measures the respective position of the multiple reference markers on patterning device.Described system System also includes the second sensing subsystem, and described second sensing subsystem includes one or more second sensor, one or The edge of multiple second sensor measurement patterning devices is relative to the support member arranged for keeping patterning device Position.Further, described system also includes controller, described controller in order to: based on patterning device multiple with reference to mark The respective position of the measurement of note determines absolute position and the pattern of patterning device of the patterned features of patterning device At least one in the change of the absolute position changing part, edge based on patterning device is relative to for keeping pattern to be formed Device and the position of the measurement of support member that arranges determine the change of the relative position at the edge of patterning device, and based on figure The absolute position of case part, patterned features absolute position determined by change and the phase at edge of patterning device At least one in changing determined by position is estimated that patterning device is relative to the position of support member over a time period At least one in the change put and the change of the pattern distortions of the patterned features of patterning device.
Each of the further feature of the present invention and advantage and the present invention is described in detail referring to appended accompanying drawing Embodiment is structurally and operationally.It should be noted that and the invention is not restricted to specific embodiments described herein.Presented herein this A little embodiments are merely illustrative purpose.Based on teachings contained herein, those skilled in the art are come by additional embodiment Say and be apparent from.
Accompanying drawing explanation
In being incorporated herein and form the accompanying drawing diagram present invention of a part of description, and enter one together with description Step is for explaining the principle of the present invention and making those skilled in the art manufacture and use the present invention.
Fig. 1 shows lithographic equipment according to an embodiment of the invention；
Fig. 2 schematically illustrates the temperature chart of the patterning device of heating, illustrated therein is in patterning device Heats；
Fig. 3 (A-D) is the schematic diagram of the deformation of different types of patterning device；
Fig. 4 schematically illustrates patterning device installation in the lithographic equipment of Fig. 1；
Fig. 5 illustrates according to an embodiment of the invention for measuring the measurement system of the distortion on patterning device；
Fig. 6 illustrates according to an embodiment of the invention for measuring the position of the reference marker on patterning device First sensor subsystem；
Fig. 7 illustrates according to an embodiment of the invention for measuring the of position on the side of patterning device Two sensor subsystems；And
Fig. 8 is the flow chart that diagram measures technique according to an embodiment of the invention.
With reference to detailed description described below and combine accompanying drawing, the features and advantages of the invention will be apparent from.Usually, The accompanying drawing that element occurs first is generally represented by the leftmost bit number (or multiple leftmost bit number) in corresponding reference marker.
Detailed description of the invention
Subject description discloses the one or more embodiments comprising inventive feature.The disclosed embodiments (or many Individual embodiment) it is merely exemplary the present invention.The scope of the present invention is not limited to the disclosed embodiments (or multiple embodiment).The present invention Limited by investing the claims hereof.
To " embodiment ", " embodiment ", " example in described embodiment (or multiple embodiment) and description Property embodiment " etc. reference represent described by embodiment (or multiple embodiment) specific feature, structure or spy can be included Point, but each embodiment can include this specific feature, structure or feature.And, these terms are not necessarily related to Identical embodiment.Additionally, when describing specific feature, structure or feature relative to an embodiment, it should be understood that no matter It whether is expressly recited, is relevant to other embodiments and realizes this feature, structure or feature also at the knowledge model of those skilled in the art In enclosing.
But, before being more fully described these embodiments, be given and can implement the exemplary of embodiments of the invention Environment is useful.
Fig. 1 schematically illustrates lithographic equipment according to an embodiment of the invention.Described equipment includes:
Irradiation system (irradiator) IL, it is configured to regulate radiant flux B (such as UV radiation or EUV-radiation)；
Supporting construction (such as mask platform) MT, its be configured to support patterning device (such as mask) MA, and with join Put the first positioner PM for patterning device is precisely located according to some parameter to be connected；
Substrate table (such as wafer station) WT, its be configured to keep substrate (being such as coated with the wafer of resist) W, and with The the second positioner PW being configured to be precisely located substrate according to some parameter is connected；
Optical projection system (such as refractive projection lens system) PS, it is disposed for be given by patterning device MA The graphic pattern projection of radiant flux B is on the target part C (such as including one or more tube cores) of substrate W；With
Lithographic equipment control unit LACU, including for control and synchronize functional element listed above function can Programmed process unit and interface.
Irradiation system can include various types of optics, such as refractive, reflection-type, magnetic type, electromagnetic type, quiet Electricity type or other type of optics or its combination in any, to guide, to shape or to control radiation.
Described supporting construction supports patterning device, i.e. carries the weight of patterning device.Supporting construction is to rely on In the direction of patterning device, that whether the design of lithographic equipment and such as patterning device are maintained at vacuum environment is medium The mode of other conditions keeps patterning device.Described supporting construction can use machinery, vacuum, electrostatic or other Clamping technique keeps patterning device.Described supporting construction can be framework or platform, and such as, it can become as required Fixing or moveable.Described supporting construction may insure that patterning device be positioned on desired position (such as relative to Optical projection system).Term used herein " mask " or " mask " are considered as and the most upper term " pattern formation dress Put " synonym.
Term used herein above " patterning device " is broadly construed as expression and can be used in existing pattern Radiant flux is given to form any device of pattern on the target part of substrate on the cross section of radiant flux.It should be noted that , give radiant flux pattern may not correspond exactly to the desirable pattern on the target part of substrate (such as, if institute State pattern and include phase shift characteristics or so-called supplemental characteristic).Generally, the pattern being endowed radiant flux will be with shape on target part Specific functional layer in the device become is corresponding, such as integrated circuit.
Patterning device can be transmission-type or reflection-type.The example of patterning device includes mask, can compile Journey reflection mirror array and Programmable LCD panel.Known to mask is in photoetching technique, and include such as binary mask class The mask-type of type, Alternating phase-shift mask type, attenuated phase shift mask type and various hybrid mask types etc.Can compile The example of journey reflection mirror array uses the matrix arrangements of small reflector, and each small reflector can be individually tilted, in order to edge The radiant flux that different directions reflection is incident.Pattern is given the spoke reflected by described mirror matrix by the described reflecting mirror tilted Beam.
Term used herein " optical projection system " can be broadly interpreted as encompassing any type of optical projection system, including folding Emitting, reflection-type, reflection-refraction type, magnetic type, electromagnetic type and electrostatic optical systems or its combination in any, as make Exposing radiation be suitable for or for such as using immersion liquid or using other factors of vacuum etc to be suitable for.This In the term " projecting lens " of any use may be considered and more upper term " optical projection system " synonym.
As shown here, described equipment is transmission-type (such as, using transmissive mask).Alternatively, described equipment Can be reflection-type (such as, use the array of programmable mirrors typed described above, or use reflection type mask).
Lithographic equipment can be to have two (dual stage) or the class of more substrate table (and/or two or more mask platform) Type.In this " multi-platform " machine, additional platform can be used concurrently, or can perform pre-on one or more platform While standby step, it is used for exposing by one or more other.
Described lithographic equipment can also is that this type, wherein substrate at least partially can be by having relatively high folding The liquid penetrating rate covers (such as water), in order to fill the space between optical projection system and substrate.Immersion liquid applies also to In other spaces of lithographic equipment, the such as space between mask and optical projection system.Immersion technique is for improving optical projection system Numerical aperture is well-known in the art.Term used herein " submergence " is not meant to structure (such as substrate) to be soaked Enter in liquid, and mean only that liquid is between optical projection system and this substrate in exposure process.
The radiant flux from radiation source S O is received with reference to Fig. 1, irradiator IL.Described source and lithographic equipment can be discrete Entity (the most when the source is an excimer laser).In this case, will not consider to be shaped as lithographic equipment by this source A part, and by including the help of such as suitably bundle transmission system BD of directional mirror and/or beam expander, by described Radiant flux passes to described irradiator IL from described source SO.In other cases, described source can be the composition of described lithographic equipment Partly (the most when the source is a mercury lamp).By described source SO and described irradiator IL and can arrange if desired Described bundle transmission system BD is referred to as radiating system together.
Described irradiator IL can include the adjustor AD of the angle intensity distributions for adjusting described radiant flux.Generally, may be used With to the intensity distributions in the pupil plane of described irradiator IL at least described in externally and/or internally radial extension (typically divide Another name is σ-outside and σ-inside) it is adjusted.Additionally, described irradiator IL can include other parts various, such as integration Device IN and condenser CO.Can be used for regulating described radiant flux by described irradiator IL, required to have in its cross section Uniformity and intensity distributions.
Described radiant flux B incides the described patterning device (example being maintained in supporting construction (such as, mask table MT) As, mask MA) on, and form pattern by described patterning device.After having already passed through mask MA, described radiant flux B passes through optical projection system PS, and described optical projection system is by radiation beam to the target part C of described substrate W.By the second location The help of device PW and position sensor IF (such as, interferometric device, linear encoder or capacitance sensor), can be accurately Mobile described substrate table WT, such as to be positioned in the path of described radiant flux B by different target part C.Similarly, example As after obtaining from the machinery of mask library or during scanning, described first positioner PM and another position can be passed Sensor (illustrating the most clearly) is precisely located mask MA for the path relative to described radiant flux B.Generally, Can be (smart fixed by the long-stroke module (coarse positioning) and short stroke module forming a part of described first positioner PM Position) help realize the movement of mask table MT.It is likewise possible to use a part of the described second positioner PW of formation Long-stroke module and short stroke module realize the movement of described substrate table WT.In the case of a stepper (with scanning device phase Instead), mask table MT can only be connected with short-stroke actuator, can be maybe fixing.Mask alignment mark M1, M2 can be used Alignment mask MA and substrate W is come with substrate alignment mark P1, P2.Although shown substrate alignment mark occupies dedicated target portions Point, but they may be located on the space (these are known as scribe-lane alignment marks) between target part.Similarly, will be many In the case of the tube core of is arranged in mask MA, described mask alignment mark may be located between described tube core.
In practice, control unit LACU will be implemented as the system of many subelements, and each carries out real time data and adopts Collection, subsystem in equipment and the process of parts and control.Such as, a processing subsystem can be exclusively used in servo substrate location The control of device PW.Discrete unit even can operate thick and fine actuator or different axles.Another unit can be special Reading in position sensor IF.The overall control of equipment can by with these subsystem processes unit, performer and photoetching The central processing unit controls of the miscellaneous equipment communication related in manufacturing process.
Shown equipment can be used at least one in following pattern:
1. in step mode, mask table MT and substrate table WT are remained substantially static while, will give described The whole pattern of radiant flux once projects to (that is, single static exposure) on target part C.Then by described substrate table WT edge X and/or Y-direction move so that can expose different target part C.In step mode, the full-size of exposure field limits The size of the described target part C of imaging in single static exposure.
2., in scan pattern, while mask table MT and substrate table WT are synchronously scanned, will give described The graphic pattern projection of radiant flux is to (that is, single dynamic exposure) on target part C.Substrate table WT is relative to the speed of mask table MT Can be determined by (reducing) amplification of described optical projection system PS and image reversal characteristics with direction.In scan pattern, The full-size of exposure field limits the width (along non-scan direction) of the described target part in single dynamic exposure, and institute The length stating scanning movement determines the height (along scanning direction) of described target part.
3., in another pattern, keep the mask table MT of programmable patterning device to remain substantially static shape by being used for State, and while by the graphic pattern projection of the described radiant flux of imparting to target part C, described substrate table WT is moved Or scanning.In this mode, generally use impulse radiation source, and described substrate table WT mobile each time after or Between continuous radiation pulse during scanning, update described programmable patterning device as required.This operator scheme Can be easy to be applied to utilize the nothing of programmable patterning device (array of programmable mirrors such as, typed described above) to cover In mould photoetching.
Combination and/or the variant of above-mentioned use pattern, or diverse use pattern can also be used.
Fig. 2 is that the heated pattern of the heats illustrated in patterning device MA for understanding the present invention is formed The simplified diagram of the temperature chart of device.Patterning device MA can be transmission mask or mask 200.Mask 200 example As can be the quartz substrate of the pattern with crome metal, and there is the effective (figure surrounding referred to herein as patterned features Case carries) perimeter region in district.Radiant flux B is used to irradiate the patterned features of mask 200, with the horizontal stroke at radiant flux in operation In cross section, pattern is given radiant flux B.
Fig. 2 illustrates the problem of the mask heating that possibly be present in optical lithography, no matter mask 200 be as This example is like that transmission or as in the other embodiments be reflection.Masked version 200 in exposure process Under the influence of partly absorbing radiant flux B, the material of mask will tend to heating, cause thermal expansion and three-dimensional distortion.Heating Area typically exposure or patterned area on extend.Common mask presents temperature after many exposing operation and rises, A large amount of exposures and wafer progressively reach steady statue after loading operation.But, the exact value of time constant and its with expose The relation heavy dependence photoetching process of the quantity of the wafer of light quantity and exposure (includes the energy of radiant flux B, certain types of covers Absorbing and the character of pattern, the thermal capacity of mask material and the speed of operation applied of masterplate) accurate details.
Especially, the patterned features of mask 200 is respectively provided with bright (transparent) and dark (opaque) part, by them Pattern is given to radiant flux B, i.e. comes from the exposure light in irradiation system IL.It is known that overlapping performance, will IC one The precision that layer is positioned on another layer of IC, by the heat effect of the mask that exposure light induces.As in figure 2 it is shown, mask 200 anisotropically heat.Such as, the temperature of the middle body of mask is 28.537 degrees Celsius (maximum), and attached at periphery Closely it is 22.691 degrees Celsius (minimum).The energy warms mask 200 absorbed from radiant flux B in exposure process, causes covering Masterplate 200 expands.This expansion causes the pattern displacement depending on time and position on wafer.
Fig. 3 A-3D shows the different types of exemplary of the pattern distortions shape of mask 200 as shown in Figure 2 The schematic diagram of plane internal deformation.Fig. 3 A shows along top and Y edge, bottom abnormal towards the pattern of the center curvature of mask 200 Deformation shape.Fig. 3 B shows that the right side X edge swell along mask 200 and the X edge, left side along mask 200 shrink. Fig. 3 C shows along left side and X edge, right side towards the center curvature of mask 200.Fig. 3 D shows along left side and right side X edge is towards the left lateral bending of mask 200.
In one embodiment, 4 pattern distortions shapes of Fig. 3 A-3D can be superimposed during measuring, with Represent the pattern distortions of mask 200.Such as, the random variation of mask 200 can be broken down into a part as shown in Figure 3A Deformation, part deformation as shown in Figure 3 B, part deformation as shown in Figure 3 C, part deformation as shown in Figure 3 D, They can be applied to obtain the actual expression of the pattern distortions shape of mask 200.The once pattern distortions of mask 200 Shape is estimated like this, then for example, and the one or more operators in the lithographic equipment of Fig. 1 can be used for revising The pattern distortions shape of the deformation of instruction mask 200.Such as, the pattern distortions shape of mask 200 can be by mobile crystalline substance Sheet platform or manipulation projecting lens are corrected.By measuring the pattern distortions shape of Fig. 3 A-3D, in one embodiment, the light of Fig. 1 Quarter, equipment may determine that the thermally-induced any deformation that adds of the mask caused due to exposure may on sometime What occur and be probably the mask 200 of degree to deform and occur on this is put sometime.Fig. 4 is schematically illustrated The mask 200 installation in lithographic equipment 202, described lithographic equipment 202 is the sketch of lithographic equipment as shown in Figure 1. Mask 200 includes the edge 205 between two first type surfaces 210a, 210b and patterned features 215, uses in operation Radiant flux 220 irradiates described patterned features, to give radiant flux by pattern in the cross section of radiant flux.Lithographic equipment 202 The irradiation system 225 being configured to regulate radiant flux 220 can be included.Lithographic equipment 202 can also include support member 230, with Supporting mask 200, pattern can be given radiant flux 220, to form pattern in the cross section of radiant flux by described mask The radiant flux 235 changed.Lithographic equipment 202 can also include substrate table 240, to keep the substrates 245 such as such as wafer.Lithographic equipment 202 can also include that the radiant flux 235 that optical projection system 250, described optical projection system are configured to will be patterned into projects to substrate 245 Target part 255 on.
In one embodiment of the invention, sensor 260 can be set, be used for measuring support member 230 relative to photoetching The position of the lensed tip 265 of the projection objective of the optical projection system 250 of equipment 202.The example of sensor 260 includes measuring distance Displacement transducer.It is, for example possible to use interferometer, encoder or capacitance sensor.The projection objective of optical projection system 250 is permissible There is optical axis 270.
Fig. 5 illustrates according to an embodiment of the invention for measuring the measurement system 400 of the distortion on mask 200. Mask 200 is illustrated with plane graph, has the X and Y-axis illustrated.For example, there is the covering of quartz substrate of the pattern of crome metal Masterplate 200 has the perimeter region surrounding patterned features 215.In patterned features 215, one or more device pattern is set District's (not shown).Patterned features 215 would correspond to the diagram of Fig. 4 when being imaged on the surface of substrate 245 by radiant flux 220 In the region of a target part 255.These target part are referred to as field for facility.Each field generally corresponds to one Or multiple tube core, described tube core will be excised, to complete to form single device afterwards in photoetching process on substrate.Show at this In example, lithographic equipment 202 is sweep type above-mentioned.Along scanning direction on mask 200 the slit-shaped illumination bands of movement S is only schematically shown.By convention, scanning direction is parallel with Y-axis.In another example, lithographic equipment 202 can be step Enter type.
According to an embodiment, multiple reference can be set along two sides being perpendicular to scanning direction of mask 200 Labelling 415 (1-m).The patterned features 215 of mask 200 can be substantially rectangular on area.Alternatively, multiple with reference to mark Note 415 (1-m) can be distributed along all four side of rectangle.X limit and Y limit along mask 200 arrange multiple reference marker 415 (1-m) make measurement system 400 can measure the various pattern distortions shapes of mask 200, the most as shown in figs. 3 a-3d.
Measurement system 400 can include that the first sensing subsystem 405, the first sensing subsystem include measuring at mask Multiple first sensors 410 (1-n) of the respective position of the multiple reference markers 415 (1-m) on 200.Multiple reference markers 415 (1-4) can be distributed in the outer peripheral portion of mask 200 around patterned features 215, as shown in Figure 4.Measurement system 400 can include the second sensing subsystem 406, the second sensing subsystem include the edge 205 measuring mask 200 relative to for Multiple second sensings of the position of the support member 230 that keeps mask 200 and arrange (not shown, such as, the mask table MT of Fig. 1) Device 412 (1-k).
The example of first sensor 410 includes optical pickocff.It is, for example possible to use the ccd video camera at wafer station Irradiator with the exposing radiation using lithographic equipment.The example of the second sensor 412 includes the displacement transducer measuring distance. It is, for example possible to use interferometer, encoder or capacitance sensor.
One or more first sensor 410 can be set, for measuring the reference marker 415 Y limit along mask 200 Respective position, to measure the bending in the top margin of mask 200 as shown in Figure 3A and the plane on base.Likewise it is possible to One or more first sensor 410 is set, for measuring the reference marker 415 respective position along the X limit of mask 200, To measure the bending in the left side of mask 200 as shown in Figure 3 C and the plane of right edge.Can arrange one or more Second sensor 412, to measure the position at the edge 205 of mask 200, in order to estimates the distortion of patterned features 215 at any time Between relative to perfect with reference to or the pattern of non-heated how to change.
How the measurement instruction patterned features 215 of the position of the reference marker 415 on mask 200 distorts, and Measuring of the position at edge 205 indicates the most how this distortion of this patterned features 215 changes, because the position at edge 205 The measurement put can be relevant to the distortion of patterned features 215.First sensor 410 can be with less frequency measurement at mask The position of the reference marker 415 on 200, and the second sensor 412 can use first sensor 410 measure cycle it Between relatively frequently to measure the position at the edge 205 of mask 200, to revise the abnormal of the patterned features 215 of mask 200 Become.The reference marker 415 observed on reticle surface due to first sensor 410, thus its can not or the most very It is difficult to while exposed image areas (i.e. patterned features 215 or one part) accurately measure reference marker 415, but Owing to the edge 205 of mask 200 is outside the region of patterned features 215, even if thus the second sensor 412 is at patterning The exposure process of a part for part 215 can also be measured.First measurement of the position at the edge 205 of mask 200 is worked as Make reference measure to move the most in time with following limb 205.
Although reference marker 415 can position relative to patterned features 215 in sub-nanometer precision (position of related features), But the edge 205 of mask 200 can position relative to patterned features 215 in micron accuracies (position of related features).Ginseng Examine labelling 415 to be printed on mask 200 and be very accurately with respect to patterned features 215 and position.Along with mask The patterned features 215 of 200 moves, and reference marker 415 moves with constant relationship together with it.Therefore when on mask 200 The edge 205 of reference marker 415 and mask 200 can simultaneously or close to the most measured time, it is possible to obtain Ya Na Meter accuracy, because if the two will not change in identical instantaneous measured so distortion.Therefore two measurements can be associated, And micron order locational uncertainty can be converted into Subnano-class locational uncertainty, because first sensor 410 and Two sensors 412 are by zero-in and reference each other.
According to one embodiment of present invention, measurement system 400 can also include controller 425, with based at mask The respective position of the measurement of the multiple reference markers 415 (1-m) on 200 determines the exhausted of the patterned features 215 of mask 200 To at least one in the change of the absolute position of the patterned features 215 of position and mask 200.
In operation, multiple reference markers 415 (1-m) all at the edge along patterned features 215 can be measured Or subgroup selected especially.For example, it is possible to measure the respective position of reference marker group 415 (1-4), to determine reference marker group The absolute position of 415 (1-4).In one embodiment, the ginseng of the mask 200 of the absolute position of instruction patterned features 215 The absolute position examining labelling group 415 (1-4) can be they positions relative to lensed tip 265, because on mask 200 Reference marker group 415 (1-4) fixed relative to the position of the position of patterned features 215 and be known.Further, figure The absolute position of case part 215 can first or reference measure of position based on reference marker group 415 (1-4).Alternatively, The absolute position of patterned features 215 can position based on reference marker group 415 (1-4) first or reference measure and with Measured instantaneous substantially simultaneously or close to the limit of this instantaneous mask 200 in the position of reference marker 415 groups (1-4) First or the reference measure substantially simultaneously of edge 205.
Controller 425 is also based on the edge 205 of mask 420 relative to the support member arranged for keeping it (not Illustrate) the position of measurement determine the change of relative position at edge 205 of mask 200.The limit of mask 200 can be measured Edge 205 is relative to the relative position of the support member 230 arranged for keeping mask 200.The operation cycle of mask 200 it After, can again measure the position relative to support member 230, the edge 205 of mask 200.That is, when edge 205 changes, survey The relative changes at amount edge 205, and obtain the relative changes of patterned features 215 based on it.Edge by mask 200 The position of the measurement of 205 and the location comparison again measured at edge 205, to identify the deviation of the position at edge 205, thus know Any change of the position of the patterned features 215 of other mask 200, until the position for reference marker group 415 (1-4) is carried out Measure next time.These deviations can be registered as single Δ x and the Δ y value of each position on such as edge 205.Limit These position deviations of edge 205 can be used in the control of exposing operation so that for the position deviation correction caused by heating The location of the patterned features 215 of mask 200 desired locations on substrate 245.By increasing the quantity of reference marker 415 Any desired precision can be obtained with the more multiposition measured on edge 205.The not only deformation in plane (such as x-y deformation) Measured and estimate, and the second sensor 412 can be laid out such that they locate (in other words, to exist at various height Different z-axis (being perpendicular to x-y plane) places) monitor the position at edge 205, this makes it possible to the mask of modeling three-dimensional (3D) The deformation of 200.
Controller 425 is also based on determined by the absolute position of patterned features 215 and patterned features 215 absolutely Estimate to cover over a time period to changing determined by the relative position at the change of position and the edge 205 of mask 200 The change of the pattern distortions of the patterned features 215 of masterplate 200.Pattern distortions represents patterned features 215 over a time period Different piece change relative to each other.
According to one embodiment of present invention, sensor 260 can be measured support member 230 (not shown) and sets relative to photoetching The position of the lensed tip 265 of the projection objective of standby 202, as shown in Figure 4.Controller 425 can use the edge of mask 200 205 relative to the position of the measurement of support member 230 and support member 230 relative to the position of the measurement of lensed tip 265, to give control Loop processed provides and controls input so that controls input and represents the mask 200 position relative to lensed tip 265, described lens Top limits the mask 200 position relative to the optical axis 270 of the projection objective of optical projection system 250, as shown in Figure 4.
Fig. 6 illustrates according to an embodiment of the invention in order to measure the reference marker on mask 200 (not shown) The first sensor subsystem 405 as shown in Figure 5 of the position of group 415 (1-4).With reference to Fig. 4, the embodiment quilt of support member 230 It is shown as mask chuck 600.Mask chuck 600 is configured to keep mask 200.Mask chuck 600 includes mask Version cavity 605.The patterned features 215 of mask 200 is positioned in mask cavity 605, for being exposed by radiant flux 220 Light.First sensor subsystem 405a includes that first sensor group 410 (1-4) is to measure the reference marker on mask 200 The respective position of group 415 (1-4).
Fig. 7 illustrates according to an embodiment of the invention in order to measure position on the lateral edges 205 of mask 200 Second sensor subsystem 406.Second sensing subsystem 406 includes the second sensor group 412 (1-6), to measure mask 200 Edge 205 relative to the position of support member 230 (here shown as mask chuck 600).Second sensor group 412 (1- 6) can be positioned in the mask cavity 605 of mask chuck 600.
In operation, the second sensor group 412 (1-6) measures the mask 200 position relative to mask chuck 600, And the mask chuck 600 position relative to lensed tip 265 measured by the sensor 260 of Fig. 4.By using this information, can To determine the mask 200 position relative to lensed tip 265.Therefore, control to include the reticle stage of mask chuck 600 The control servo loop of the position of (not shown) can use the mask 200 position relative to lensed tip 265, replaces mask The position of bed, the position of the mask chuck 600 i.e. measured by sensor 260.
One or more second sensors 412 being positioned on Y limit can be measured mask and slide.In one embodiment, Being not only along Y limit, the second sensor 412 can be used for determining along scanning along the combination at all edges of mask 200 The slip in direction.Furthermore, it is possible to determine the mask 200 combination rotating or sliding and rotate along z-axis.Controller 425 can To distinguish the slip of such mask and the change of mask shape, the pass of edge metering will be caused because sliding/rotating Connection changes.The position of the measurement on the side 205 of mask 200 can be supplied to control servo loop to regulate mask The position of platform, thus revise mask and slide.Control servo loop and there is the reference position that reticle stage attempts to follow, sensor 260 physical locations that reticle stage is provided, and provide feedback circuit to mate with reference position so that position will be measured.From being positioned at The Real-time Feedback of one or more second sensors 412 on X limit is so that can be at each tube core a wafer itself Exposure process in or in the exposure process of singulated dies, regulate exposure in real time by regulation mask or the position of wafer station Light.
Such as, before exposure, first sensor group 410 (1-4) can measure the reference marker group on mask 200 The respective position of 415 (1-4).Further, can to measure the edge 205 of mask 200 relative for the second sensor group 412 (1-4) One or more positions in support member 230.After the exposure of a wafer, the second sensor group 412 (1-4) can be measured The one or more position at the edge 205 of mask 200, with determine the patterned features 215 of mask 200 position or How shape changes in X/Y plane, and controller 425 can use this fresh information and be applied to it expose straightener System.Then, after a collection of wafer or a number of wafer, first sensor group 410 (1-4) can be measured again with reference to mark The respective position of note group 415 (1-4).
Fig. 8 is the flow chart illustrating measuring method 800 according to an embodiment of the invention.Method 800 is provided for surveying Measure the deformation of such as mask 200 patterning device such as grade.Have in reference marker group 415 (1-4), patterned features 215 Device pattern and other mask 200 being directed at/measure feature are loaded in support member 230 or patterning device support member MT On, and clamped by vacuum chuck.
In frame 805, can be relative to reference coordinate system with reference to timekeeping system measurement reference marker group 415 (1-4) Respective position, to determine the absolute position of patterned features 215.The example of reference coordinate system includes wherein support member 230 (or mask chucks 600) and the limited coordinate system in position of lensed tip 265.Example bag with reference to timekeeping system The timing including the measurement of the position wherein carrying out reference marker group 415 (1-4) and the position at the edge 205 being masked version 200 The limited timekeeping system of timing of measurement.The position of reference marker group 415 (1-4) can be relative to lensed tip 265 quilt Measure as reference, for using in the future.After a time period, wherein mask heating contingent exposure behaviour After making the phase, the position of reference marker group 415 (1-4) is again measured.These positions such as can be used for identifying such as by covering The deformation of the mask that the heating of masterplate causes.
In frame 810, the edge 205 of mask 200 can be measured relative to the support arranged for keeping mask 200 The position of part 230.In frame 815, after the operation phase of mask 200, can again measure the edge 205 of mask 200 Position relative to support member 230.The position at the edge 205 measuring patterning device can be included in the target of substrate 245 Part 255 is exposed to the radiant flux 235 of patterning, pattern 215 is applied to substrate from mask 200 by photoetching process During on 245, measure the position at the edge 205 of mask 200 continuously by sampling with expected frequency (such as, 10kHz) Put.
According to one embodiment of present invention, phase after the first operation phase that method 800 is additionally may included in mask 200 Reference coordinate system and reference timekeeping system are measured again to the position of reference marker group 415 (1-4), and at mask 200 The second operation phase after again measure the position relative to support member 230, the edge 205 of mask 200.An embodiment In, the first operation phase of mask 200 can be differently configured from the second operation phase of mask 200 so that reference marker group 415 (1- 4) with more measured than less frequency ground, edge 205 of mask 200.
According to one embodiment of present invention, the step 815 of the position again measuring the edge 205 of mask 200 includes Target part 255 at substrate 245 be exposed to patterning radiant flux 235, with by photoetching process by pattern 215 from mask The distance at the edge 205 of mask 200 is measured during being applied on 200 on substrate 245.In step 810, measurement is covered The position at the edge 205 of masterplate 200 also includes basic relative to the position of support member 230 with the edge 205 measuring mask 200 On simultaneously measure the respective position of reference marker group 415 (1-4).
In frame 820, the respective position of measurement based on reference marker group 415 (1-4), the edge 205 of mask 200 The position of measurement and the position again measured at edge 205 of mask 200, on the operation phase of mask 200, can be by The pattern distortions of the patterned features 215 of mask 200 is estimated as the absolute position of the patterned features 215 of mask 200 Change.Edge metering may be utilized for detecting the skew (slide, rotate) of mask 200.Further, survey based on edge 205 Amount, the not only deformation of patterned features 215, and also mask 200 is due to its position change caused that slides, or owing to accelerating The rotation that degree causes can be determined.Deformation information and position change information the most all can be used for the position of correction map picture, The i.e. position (and thus improving overlap) of patterned features 215.
According to one embodiment of present invention, method 800 also includes that repeated exposure is applied to lining will be patterned into part 215 On a series of target part at the end 245, and expose the position not repeating again to measure reference marker group 415 (1-4) every time Step.Alternatively, method 800 includes that repeated exposure is applied on more than one substrate will be patterned into part 215 one is On row target part, and substrate the newest after the exposure of the substrate of predetermined quantity is loaded in lithographic equipment 202 Shi Chongfu measures the step of the position of multiple reference marker again.
Can perform to expose several times for each being loaded in a series of substrates in lithographic equipment 202, and Perform again to measure the step of the position of reference marker group 415 (1-4) when new substrate is loaded in lithographic equipment 202. Alternatively, can perform to expose several times for each being loaded in a collection of substrate in lithographic equipment 202, and when new Substrate perform when next group substrate is loaded into lithographic equipment 202 again measure reference marker group 415 (1-4) position Step.
In course of normal operation, heating and the distortion subsequently of mask 200 may very slowly change, at this Measure dispensable in the case of Zhong frequently.Therefore, in practical embodiment, the most off and on, will not be undeservedly in yield The position of reference marker 415 is measured when being affected.Mask 200 or pattern between the measurement of multiple reference markers 415 (1-m) The progressive heating forming device MA can be determined by the measurement at edge 205 so that in the middle of the measurement of reference marker 415 The deformation of mask 200 can also be determined to desired accuracy class.Due to can be in the exposure of different target part (field) Photoreduction process carries out deformation measurement, therefore, it is possible in the case of there is no production loss, obtain the alignment precision of the pattern of exposure Gain.
According to method 800, controller 425 can be by measuring when not having the patterned features 215 of exposed mask version 200 The respective position of the reference marker group 415 (1-4) on mask 200 determines the patterned features 215 of mask 200 The change of the absolute position of the patterned features 215 of absolute position or mask 200.By there is no exposed mask version 200 Patterned features 215 time and during using radiant flux 220 to expose the target part 255 of substrate 245, measure mask The edge 205 of 200 is relative to the position of support member 230, and controller 425 may determine that the phase para-position at the edge 205 of mask 200 The change put.
According to method 800, controller 425 may then based on absolute position and the patterned features of patterned features 215 In changing determined by the relative position at the change of absolute position determined by 215 and/or the edge 205 of mask 200 Any one estimate the change of pattern distortions of patterned features 215 of mask 200 over a time period.Method 800 also may be used The support member 230 arranged to include being measured as holding mask 200 is relative to the lens top of the projection objective of lithographic equipment 202 The position in portion 265.Edge 205 based on mask 200 is relative with support member 230 relative to the position of the measurement of support member 230 In the position of the measurement of lensed tip 265, represent mask 200 permissible relative to the control of the position of lensed tip 265 input It is provided to control loop.
For example, it is possible to do not measure the position of multiple reference markers 415 (1-m) on mask 200 for each wafer. The position at the edge 205 of mask 200 can be measured in real time in exposure process, therefore can be without very frequency in the middle of exposure Measure the position of multiple reference marker 415 (1-m) numerously, because these are measured adds production loss, and the limit of mask 200 The measurement of edge 205 will not.But it is that instead of the position at edge 205, it needs to be determined that the position of patterned features 215 in exposure process Put.To this end, by measurement and the measurement of multiple reference marker 415 (1-m) of combining edge 205, it may be determined that patterned features The original state of the pattern distortions of 215.That is, for example, it may be determined that what patterned features 215 seems when moment t=0 Sample.Further, by or continuing to measure the position at the edge 205 of mask in exposure process after exposition, it may be determined that Distortion on patterned features 215 change in time.By this way, use this Real-time Feedback, can be at exposure wafer While adjust exposure technology.Carry out afterwards however, it is possible to only or even criticize in many after a collection of wafer completes exposure The measurement next time of multiple reference markers 415 (1-m), or once survey on not carrying out before mask 200 is unloaded Amount.
Method 800 can also include the target part 255 of substrate 245 is exposed to patterned beam of radiation 235, to pass through light Pattern 215 is applied to substrate 245 by carving technology from mask 200 so that step of exposure includes according to the results modification estimated At least one parameter of exposure, in order to reduce the aliasing error between pattern and the pattern being present on substrate 245 applied. Therefore, it can improve overlapping and yield.
Such as, in one embodiment of the invention, method 800 includes: in response to indicating changing of the pattern distortions estimated The feedback become, the exposure of the real-time target part 255 adjusted with the substrate 245 in photoetching process in the exposure process of substrate 245 One or more parameters of light association.Can be in response to the feedback of the change of the pattern distortions of instruction estimation, by controller 425 Adjust in real time in the exposure process of substrate 245 one or more ginsengs that the exposure with the target part 255 of substrate 245 associates Number.
Controller 425 can adjust at substrate 245 in real time in response to the feedback of the change of the pattern distortions that instruction is estimated One or more parameters that in exposure process, exposure with target part 255 (not shown) of substrate 245 (not shown) associates.? In the case of scan exposure, lithographic equipment 202 can be controlled to change mask 200 X relative with substrate 245 and Y location, And also change the amplification of optical projection system 250, in order to improve the device feature on mask pattern 215 and front once Exposure in occur in the coupling of position of feature on substrate 245.Alternatively, machinery and/or heat energy can be directed into mask In a part for version 200, in order to active countermeasures thermal distoftion.The purpose of these measures can be generally to reduce amount of distortion, or Simply distortion is redistributed into can use the available control parameter of lithographic equipment 202 more effectively or more easily by The shape revised.
In a manufacturing process, such as, substrate W (semiconductor wafer or substrate 245) is loaded in lithographic equipment 202.With Together, " matingplan " controlled unit of technological parameter receives substrate 245, set up according to " matingplan " of technological parameter and Operation lithographic equipment 202.Some parameters can be arranged for a collection of similar substrate, and other parameter can be exclusively used in single Substrate.Measuring function can be performed to measure the accurate location of substrate 245 and it to be directed at optical projection system 250.With expectation Resolution and precision draw on the surface of substrate 245 X, Y location and height (z) position.Measurement is deposited by control unit Storage, is used for controlling exposing operation.Exposure parameter is set according to matingplan and measurement.Exposure technology generally by use by The radiant flux B of patterning device MA patterning exposes continuous field (the target part C in Fig. 1) to be carried out.Finally, patterning is taken out Finished product substrate and load next substrate.
Although in this article may be referring in particular to lithographic equipment application in the manufacture of IC, it should be appreciated that to here Described lithographic equipment can have other application, such as, manufacture integrated optics system, the guiding of magnetic domain memory and detection figure Case, flat faced display, liquid crystal display (LCD), film magnetic head etc..One skilled in the art would recognize that in this replacement In the case of application, any term " wafer " used herein or " tube core " can be considered respectively and more upper term " substrate " or " target part " synonym.Substrate referred to herein can process before or after exposure, such as at track (resist layer is typically coated onto on substrate by one, and the instrument that the resist exposed is developed), measuring tool And/or in the instruments of inspection.In the applicable case, described disclosure can be applied to this and other substrate processing works In tool.It addition, described substrate can process more than once, for example, produce multilamellar IC so that described term used herein " lining The end " substrate being included multiple processed layers can also be represented.
Although embodiments of the invention application in optical lithography being described in detail above, it should be noted that the present invention can To be used in other application, such as imprint lithography, as long as and situation allow, be not limited to optical lithography.At impressing In photolithography, the topology in patterning device defines the pattern produced on substrate.Can be by described patterning device Topology be printed onto in the resist layer being supplied to described substrate, thereon by applying electromagnetic radiation, heat, pressure or a combination thereof Described resist is made to solidify.After described resist solidifies, described patterning device is removed from described resist, and Leave pattern in the resist.
The electromagnetic radiation that term used herein " radiates " and " bundle " comprises all types, including: ultraviolet radiation (UV) (example As having wavelength or the wavelength of about 365,355,248,193,157 or 126nm of 365,355,248,193,157 or 126nm) and Extreme ultraviolet (EUV) radiation (such as there is the wavelength in the range of 5-20nm), and particle beam, such as ion beam or electron beam.
In the case of allowing, term " lens " can represent any one of different types of optical component or its group Close, including refraction type, reflective, magnetic, electromagnetism and the optical component of electrostatic.
While specific embodiments of the invention have been described above, however, it should be understood that the present invention can be with above-mentioned Different modes realizes.Such as, the present invention can use comprise for describe a kind of method as disclosed above one or The form of the computer program of more sequence of machine-readable instruction, or there are the data storing described computer program therein The form of storage medium (such as semiconductor memory, disk or CD).
This specification illustrates that rather than limits.Therefore, one skilled in the art would recognize that without departing substantially from power The present invention can be made amendment in the case of the scope that profit requires.
It should also be appreciated that " detailed description of the invention " part rather than " summary of the invention " and " summary " part are intended for power of interpretation Profit claim." summary of the invention " and " summary " part can propose one or more rather than by inventor (or multiple inventor) All exemplary embodiments of the present invention of design, and be therefore not intended to limit the present invention and appended power by any way Profit claim.
The most describe this by the function of explanation regulation with the formation function module of the embodiment of its relation Bright.The border optionally defining these formation function modules is described the most for convenience.The border of replacement can be limited, As long as the function of regulation and its relation are properly performed.
The described above of specific embodiment so will fully disclose the universality of the present invention, so that by application this area The general knowledge of technical staff, other people can be easily various application amendment and/or adjust described specific embodiment, and nothing Need excessive experiment, and without departing from the general concept of the present invention.Therefore, based on teaching presented herein and guiding, described tune Whole and amendment is intended to fall in the implication of equivalent way and scope of the disclosed embodiments.Should be appreciated that wording herein It is be intended to be illustrative and not restrictive with term so that the term of this specification or wording will be under described teaching and guiding Explained by those skilled in the art.
The amplitude of the present invention and scope should not necessarily be limited by any of above exemplary embodiment, and according only to appended claim Book and its equivalent way and be defined.

Claims (25)

1. the method determining the skew of the deformation of patterning device or the position of patterning device, described pattern is formed Device has the edge between two first type surfaces and patterned features, uses radiant flux to irradiate described patterning in operation Part, so that pattern to give in the cross section of radiant flux radiant flux, described method includes:
The respective position of multiple reference markers is measured, to determine patterning relative to reference coordinate system and reference timekeeping system The absolute position of part, the week of the patterned features that plurality of reference marker is distributed in the outer peripheral portion of patterning device Enclose；
Measure the position relative to the support member arranged for keeping patterning device, the edge of patterning device；
After the operation phase of patterning device, again measure the position relative to support member, the edge of patterning device； With
Measured respective positions based on multiple reference markers, the position of measurement at edge of patterning device and pattern shape Become the position again measured at the edge of device, on the operation phase of patterning device, by patterning device relative to propping up At least one in the pattern distortions of the change of the position of support member and the patterned features of patterning device is estimated as pattern shape Become the change of the absolute position of the patterned features of device.
2. the method for claim 1, the position at the edge that again in which measures patterning device includes:
The distance at the edge of patterning device is measured by patterned beam of radiation during the target part of substrate is exposed, Pattern is applied to substrate from patterning device by photoetching process.
3. the method for claim 1, the position at the edge wherein measuring patterning device includes: substantially with measurement The edge of patterning device simultaneously, is measured relative to for keeping patterning device in the respective position of multiple reference markers And the position of the support member arranged, wherein pattern distortions represents that the different piece of patterned features over a time period is relative to that This change.
4. method as claimed in claim 3, also includes:
In response to instruction pattern distortions estimated by change and patterning device position estimated by change in extremely The feedback of few one, adjusts in real time in the exposure process of substrate and associates with the exposure of the target part of the substrate in photoetching process One or more parameters.
5. the method for claim 1, also includes:
Be measured as keeping patterning device and the support member that arranges relative to the lensed tip of the projection objective of lithographic equipment Position.
6. method as claimed in claim 5, also includes:
Use the edge of patterning device relative to the position of the measurement of support member and support member relative to the survey of lensed tip The position of amount, to provide to the control input controlling loop so that control input representative pattern and form device relative to lens top The position in portion.
7. the method for claim 1, wherein provides multiple reference marker to include:
The both sides being perpendicular to scanning direction along patterning device provide multiple reference markers.
8. the method for claim 1, also includes:
Repeated exposure is with on a series of target part of being applied on substrate by pattern, and does not repeat again to survey in exposure every time Measure the step of the position of multiple reference marker.
9. the method for claim 1, also includes:
Repeated exposure is to be applied to pattern on a series of target part on more than one substrate, and at predetermined quantity Substrate the newest after the exposure of substrate repeats again to measure the position of multiple reference marker when being loaded in lithographic equipment Step.
10. method as claimed in claim 9, wherein for each in a series of substrates of being loaded in lithographic equipment Perform multiexposure, multiple exposure, and perform again to measure the position of multiple reference marker when new substrate is loaded in lithographic equipment Step.
11. methods as claimed in claim 9, wherein hold for each in a collection of substrate that is loaded in lithographic equipment Row multiexposure, multiple exposure, and perform when new substrate is loaded into lithographic equipment from next group substrate again to measure multiple reference The step of the position of labelling.
12. the method for claim 1, the position at the edge wherein measuring patterning device includes:
Target part at substrate is exposed by patterned beam of radiation, to be applied from patterning device by pattern by photoetching process By measuring the position at the edge of patterning device continuously with expectation frequency sampling during on substrate.
13. the method for claim 1, also include:
The target part of substrate is exposed by patterned beam of radiation, pattern is applied from patterning device by photoetching process On substrate, wherein exposure includes at least one parameter according to the results modification exposure estimated, in order to reduce the figure applied Case and the aliasing error being present between the pattern on substrate.
14. the method for claim 1, wherein the patterned features of patterning device is upper for substantially square at the regional level Shape.
15. methods as claimed in claim 14, plurality of reference marker is distributed along all four side of rectangle.
16. the method for claim 1, also include:
After the first operation phase of patterning device, relative to reference coordinate system and again measure many with reference to timekeeping system The position of individual reference marker；With
After the second operation phase of patterning device, again measure the edge of patterning device relative to for keeping pattern The position of the support member forming device and arrange,
Wherein the first operation phase of patterning device is different from the second of patterning device the operation phase so that multiple with reference to mark Remember with more less frequent than the edge of patterning device measured.
The method of 17. 1 kinds of skews determining the deformation of patterning device or the position of patterning device, makes in operation Described patterning device is irradiated, pattern to be given radiant flux, described method bag in the cross section of radiant flux with radiant flux Include:
By measuring the multiple reference marks on patterning device when there is no the patterned features of exposing patterns formation device The respective position of note, determines the absolute position of the patterned features of patterning device and the patterning portion of patterning device At least one in the change of the absolute position divided；
By when there is no the patterned features of exposing patterns formation device and at the target part using radiant flux exposure substrate During measure the position relative to the support member arranged for keeping patterning device, the edge of patterning device, really Determining the change of the relative position at the edge of patterning device, described radiant flux is in a lithographic process by patterning device quilt Patterning；With
Change determined by the absolute position of absolute position based on patterned features and patterned features and pattern is formed At least one in changing determined by the relative position at the edge of device, estimates patterning device phase over a time period For at least one in the change of the change of position of support member and the pattern distortions of the patterned features of patterning device.
18. methods as claimed in claim 17, also include:
In response to instruction pattern distortions estimated by change and patterning device position estimated by change in extremely The feedback of few one, adjusts one or more with what the exposure of the target part of substrate associated in the exposure process of substrate in real time Parameter.
19. methods as claimed in claim 17, also include:
Be measured as keeping patterning device and the support member that arranges relative to the lensed tip of the projection objective of lithographic equipment Position；With
Use the edge of patterning device relative to the position measured by support member and support member relative to lensed tip Measured position, to provide to the control input controlling loop so that control input representative pattern and form device relative to thoroughly The position in vertex portion.
The measurement system of the skew of the position of 20. 1 kinds of deformation being used for determining patterning device or patterning device, institute State patterning device and there is patterned features, use radiant flux to irradiate described patterned features, with at radiant flux in operation Cross section in give radiant flux by pattern, described measurement system includes:
First sensing subsystem, described first sensing subsystem includes multiple first sensor, and the plurality of first sensor is surveyed The respective position of the multiple reference markers on amount patterning device；
Second sensing subsystem, described second sensing subsystem includes one or more second sensor, the one or more The edge of the second sensor measurement patterning device is relative to the position of the support member arranged for keeping patterning device； With
Controller, described controller in order to:
Respective measured positions based on the multiple reference markers on patterning device determine the figure of patterning device At least one in the change of the absolute position of the absolute position of case part and the patterned features of patterning device,
Edge based on patterning device is relative to the position measured by the support member arranged for keeping patterning device Put the change of the relative position at the edge determining patterning device, and
Change determined by the absolute position of absolute position based on patterned features and patterned features and pattern is formed At least one in changing determined by the relative position at the edge of device, estimates patterning device phase over a time period For at least one in the change of the change of position of support member and the pattern distortions of the patterned features of patterning device.
21. measure system as claimed in claim 20, and wherein said controller is in response to estimated by instruction pattern distortions The feedback changed adjusts the one or more ginsengs associated with the exposure of the target part of substrate in the exposure process of substrate in real time Number.
22. measure system as claimed in claim 20, also include:
3rd sensor, the support member arranged for being measured as holding patterning device is relative to the projection thing of lithographic equipment The position of the lensed tip of mirror,
Wherein said controller uses the edge of patterning device relative to the position measured by support member and support member phase For the position measured by lensed tip, to provide to the control input controlling loop so that control input representative pattern shape Becoming the device position relative to lensed tip, described lensed tip limiting pattern forms the device optical axis relative to projection objective Position.
23. 1 kinds of lithographic equipments, including:
Irradiation system, described irradiation system is configured to regulate radiant flux；
Support member, described support member is configured to support patterning device, and described patterning device can be at radiant flux Radiant flux is given by pattern, to form the radiant flux of patterning in cross section；
Substrate table, described substrate table is configured to keep substrate；
Optical projection system, the radiant flux that described optical projection system is configured to will be patterned into projects on the target part of substrate；With
For the measurement system of the skew of the position of the deformation or patterning device that determine patterning device, described pattern shape Become device to have patterned features, use radiant flux to irradiate described patterned features, with the cross section at radiant flux in operation Interior radiant flux that pattern is given, described measurement system includes:
First sensing subsystem, described first sensing subsystem includes multiple first sensor, and the plurality of first sensor is surveyed The respective position of the multiple reference markers on amount patterning device；
Second sensing subsystem, described second sensing subsystem includes one or more second sensor, the one or more The edge of the second sensor measurement patterning device is relative to the position of the support member arranged for keeping patterning device； With
Controller, described controller in order to:
The figure of patterning device is determined based on the respective position measured by the multiple reference markers on patterning device At least one in the change of the absolute position of the absolute position of case part and the patterned features of patterning device,
Edge based on patterning device is relative to the position measured by the support member arranged for keeping patterning device Put the change of the relative position at the edge determining patterning device, and
Change determined by the absolute position of absolute position based on patterned features and patterned features and pattern is formed At least one in changing determined by the relative position at the edge of device, estimates patterning device phase over a time period For at least one in the change of the change of position of support member and the pattern distortions of the patterned features of patterning device.
24. lithographic equipments as claimed in claim 23, wherein said controller is in response to estimated by instruction pattern distortions The feedback changed adjusts the one or more ginsengs associated with the exposure of the target part of substrate in the exposure process of substrate in real time Number.
25. lithographic equipments as claimed in claim 23, wherein said measurement system also includes:
3rd sensor, the support member arranged for being measured as holding patterning device is relative to the lens top of optical projection system The position in portion,
Wherein said controller uses the edge of patterning device relative to the position measured by support member and support member phase For the position measured by lensed tip, to provide to the control input controlling loop so that control input representative pattern shape Becoming the device position relative to lensed tip, described lensed tip limiting pattern forms the device optical axis relative to optical projection system Position.
CN201580019619.XA 2014-04-28 2015-03-05 Estimate the deformation of patterning device and/or the change of its position Expired - Fee Related CN106164778B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461985222P 2014-04-28 2014-04-28
US61/985,222 2014-04-28
PCT/EP2015/054650 WO2015165623A1 (en) 2014-04-28 2015-03-05 Estimating deformation of a patterning device and/or a change in its position

Publications (2)

Publication Number Publication Date
CN106164778A true CN106164778A (en) 2016-11-23
CN106164778B CN106164778B (en) 2018-02-09

Family

ID=52686335

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580019619.XA Expired - Fee Related CN106164778B (en) 2014-04-28 2015-03-05 Estimate the deformation of patterning device and/or the change of its position

Country Status (6)

Country Link
US (1) US9857694B2 (en)
JP (1) JP2017516124A (en)
CN (1) CN106164778B (en)
NL (1) NL2014403A (en)
TW (1) TWI564678B (en)
WO (1) WO2015165623A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783664A (en) * 2017-01-03 2017-05-31 京东方科技集团股份有限公司 A kind of display module, binding detection method and binding system

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607334B2 (en) * 2014-12-09 2020-03-31 Asml Netherlands B.V. Method and apparatus for image analysis
WO2016091534A1 (en) 2014-12-09 2016-06-16 Asml Netherlands B.V. Method and apparatus for image analysis
US10818561B2 (en) * 2016-01-28 2020-10-27 Applied Materials, Inc. Process monitor device having a plurality of sensors arranged in concentric circles
NL2018233A (en) * 2016-03-10 2017-09-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2017209132A1 (en) * 2016-05-31 2017-12-07 株式会社ニコン Mark detection apparatus, mark detection method, measuring apparatus, exposure apparatus, exposure method, and device manufacturing method
CN106200275B (en) * 2016-07-11 2017-12-01 武汉华星光电技术有限公司 Exposure method
CN107664833B (en) * 2016-07-29 2020-10-16 上海微电子装备（集团）股份有限公司 Machine vision system for aligning substrate and aligning device
CN113608413A (en) 2016-09-30 2021-11-05 株式会社尼康 Measuring system
US10337852B1 (en) * 2017-12-18 2019-07-02 Kla-Tencor Corporation Method for measuring positions of structures on a substrate and computer program product for determining positions of structures on a substrate
EP3518040A1 (en) * 2018-01-30 2019-07-31 ASML Netherlands B.V. A measurement apparatus and a method for determining a substrate grid
WO2020094369A1 (en) * 2018-11-05 2020-05-14 Asml Holding N.V. Apparatus for and method of measuring distortion of a patterning device in a photolithographic apparatus
US20200411348A1 (en) * 2019-06-28 2020-12-31 Kawasaki Jukogyo Kabushiki Kaisha Substrate transfer apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894056A (en) * 1995-12-19 1999-04-13 Nikon Corporation Mask substrate, projection exposure apparatus equipped with the mask substrate, and a pattern formation method utilizing the projection exposure apparatus
NL1011888C2 (en) * 1998-04-27 2000-01-07 Fujitsu Ltd Stepper having a reticle and a method of positioning a reticle in a stepper, a manufacturing process of a semiconductor device using such a stepper.
US20110033790A1 (en) * 2009-08-10 2011-02-10 Canon Kabushiki Kaisha Detection apparatus, exposure apparatus, and device fabrication method
CN102193320A (en) * 2010-03-05 2011-09-21 上海微电子装备有限公司 Alignment device for photoetching machines and alignment method thereof
CN102692830A (en) * 2011-03-24 2012-09-26 南亚科技股份有限公司 Method for evaluating overlay error and mask for the same
CN103186059A (en) * 2011-12-29 2013-07-03 南亚科技股份有限公司 Mask overlay method, mask, and semiconductor device using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3412704B2 (en) 1993-02-26 2003-06-03 株式会社ニコン Projection exposure method and apparatus, and exposure apparatus
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
US5751404A (en) 1995-07-24 1998-05-12 Canon Kabushiki Kaisha Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates
JPH1041205A (en) * 1996-07-18 1998-02-13 Nikon Corp Scanning alligner
JPH10247617A (en) 1997-03-03 1998-09-14 Nikon Corp Method and device of projection aligner
EP1182509B1 (en) 2000-08-24 2009-04-08 ASML Netherlands B.V. Lithographic apparatus, calibration method thereof and device manufacturing method
US6653639B1 (en) 2000-10-17 2003-11-25 Nikon Corporation Chuck for mounting reticle to a reticle stage
JP3689698B2 (en) 2003-01-31 2005-08-31 キヤノン株式会社 Projection exposure apparatus, projection exposure method, and method of manufacturing exposed member
JP2004328014A (en) * 2004-08-10 2004-11-18 Nikon Corp Projection lithography system and pattern forming method using same
JP2005184034A (en) * 2005-03-15 2005-07-07 Nikon Corp Aligner and method of forming pattern using same
US7804582B2 (en) * 2006-07-28 2010-09-28 Asml Netherlands B.V. Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method
NL1036028A1 (en) 2007-10-09 2009-04-15 Asml Netherlands Bv Servo control system, lithographic apparatus and control method.

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894056A (en) * 1995-12-19 1999-04-13 Nikon Corporation Mask substrate, projection exposure apparatus equipped with the mask substrate, and a pattern formation method utilizing the projection exposure apparatus
NL1011888C2 (en) * 1998-04-27 2000-01-07 Fujitsu Ltd Stepper having a reticle and a method of positioning a reticle in a stepper, a manufacturing process of a semiconductor device using such a stepper.
US20110033790A1 (en) * 2009-08-10 2011-02-10 Canon Kabushiki Kaisha Detection apparatus, exposure apparatus, and device fabrication method
CN102193320A (en) * 2010-03-05 2011-09-21 上海微电子装备有限公司 Alignment device for photoetching machines and alignment method thereof
CN102692830A (en) * 2011-03-24 2012-09-26 南亚科技股份有限公司 Method for evaluating overlay error and mask for the same
CN103186059A (en) * 2011-12-29 2013-07-03 南亚科技股份有限公司 Mask overlay method, mask, and semiconductor device using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783664A (en) * 2017-01-03 2017-05-31 京东方科技集团股份有限公司 A kind of display module, binding detection method and binding system
CN106783664B (en) * 2017-01-03 2020-04-21 京东方科技集团股份有限公司 Display module, binding detection method and binding system

Also Published As

Publication number Publication date
US9857694B2 (en) 2018-01-02
CN106164778B (en) 2018-02-09
JP2017516124A (en) 2017-06-15
TWI564678B (en) 2017-01-01
TW201546576A (en) 2015-12-16
US20170068171A1 (en) 2017-03-09
WO2015165623A1 (en) 2015-11-05
NL2014403A (en) 2015-11-02

Similar Documents

Publication Publication Date Title
CN106164778B (en) Estimate the deformation of patterning device and/or the change of its position
JP4819924B2 (en) Method for correcting non-uniform reticle heating in a lithographic apparatus, lithographic apparatus, and computer-readable storage medium.
JP4549957B2 (en) Method and system for aligning first and second markers
CN104662480B (en) Mask deformation quantitative measurement system
JP6014768B2 (en) Encoder scale calibration method and lithographic apparatus
TWI519906B (en) Position measurement system, grating for a position measurement system and method
JP6957692B2 (en) Lithography equipment
TW200830365A (en) Lithographic apparatus and method
CN106462089B (en) Lithographic equipment and exposure method
TWI438582B (en) Position control system, lithographic apparatus, and method to control a position of a movable object
TWI417679B (en) Lithographic apparatus and patterning device
CN104756013B (en) Substrate alignment system, lithographic equipment and device making method
CN103091999B (en) Lithographic equipment and device making method
CN106462079B (en) Object positioning system, control system, lithographic equipment, object positioning method and device making method
JP2015507369A (en) Stage system and lithography apparatus
JP5127684B2 (en) Lithographic apparatus and device manufacturing method capable of suppressing focus error due to substrate topology with exposure slit shape adjusted
JP4902685B2 (en) Stage system, lithographic apparatus including the stage system, and device manufacturing method
CN103293872B (en) Substrate manipulation device, etching system and device making method
JP5624093B2 (en) Motion detection system, lithographic apparatus, and device manufacturing method
NL2021057A (en) Method to obtain a height map of a substrate having alignment marks, Substrate alignment measuring apparatus and Lithographic apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180209

Termination date: 20190305