CN106159023A - Solaode and manufacture method thereof - Google Patents
Solaode and manufacture method thereof Download PDFInfo
- Publication number
- CN106159023A CN106159023A CN201510159282.4A CN201510159282A CN106159023A CN 106159023 A CN106159023 A CN 106159023A CN 201510159282 A CN201510159282 A CN 201510159282A CN 106159023 A CN106159023 A CN 106159023A
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- China
- Prior art keywords
- type semiconductor
- layer
- transparent surface
- solaode
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 105
- 239000002344 surface layer Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims description 79
- 238000000151 deposition Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention is to provide a kind of solaode and manufacture method thereof, and it can promote the ability of anti-electroluminescent decline and not affect solar battery efficiency.This solaode comprises photoelectric conversion substrate, transparent surface layer, anti-reflecting layer and upper electrode layer.Photoelectric conversion substrate has upper surface.Transparent surface layer is arranged on the upper surface of photoelectric conversion substrate.Anti-reflecting layer is arranged on transparent surface layer.Upper electrode layer is arranged among transparent surface layer and anti-reflecting layer, and is electrically connected on the upper surface of photoelectric conversion substrate.
Description
Technical field
The present invention is about a kind of solaode, especially with regard to utilizing atmospheric plasma method
(Atmospheric-pressure plasma, AP-plasma) forms a kind of solaode with oxide skin(coating)
And manufacture method.
Background technology
According to the specification (IEC 62804) of International Electro motor committee, the electroluminescent decline of solaode
The necessary carry of (potential induced degradation, PID) test is at 1000V, and temperature 60 C, humidity
Testing 96 hours for 85% time, the decay of its final efficiency need to be less than 5%, can be by test.
Solaode is mostly by promoting the refractive index of anti-reflecting layer at present, to reach to promote solaode
The ability of anti-electroluminescent decline, but the method can reduce the solar battery efficiency of 0.1～0.3%.Therefore,
Need solaode and the manufacture method thereof of a kind of novelty at present badly, so as to promote anti-electroluminescent decline ability and
Do not affect solar battery efficiency.
Summary of the invention
Because prior art problem encountered, the invention discloses solaode and the system thereof of a kind of novelty
Making method, it can promote the ability of anti-electroluminescent decline and not affect solar battery efficiency.
It is an aspect of the invention to provide a kind of solaode.This solaode comprises opto-electronic conversion base
Plate, transparent surface layer, anti-reflecting layer and upper electrode layer.Photoelectric conversion substrate has upper surface.Transparent junction
Layer is arranged on the upper surface of photoelectric conversion substrate.Anti-reflecting layer is arranged on transparent surface layer.Upper electrode layer
It is arranged among transparent surface layer and anti-reflecting layer, and is electrically connected on the upper surface of photoelectric conversion substrate.
According to embodiments of the invention, above-mentioned photoelectric conversion substrate comprises n type semiconductor layer and p-type is partly led
Body layer.
According to embodiments of the invention, above-mentioned n type semiconductor layer is arranged on p type semiconductor layer, and thoroughly
Bright junction layer is arranged on n type semiconductor layer.
According to embodiments of the invention, above-mentioned photoelectric conversion substrate is silicon substrate.
According to embodiments of the invention, above-mentioned transparent surface layer is oxide skin(coating).
According to embodiments of the invention, above-mentioned oxide skin(coating) is Si oxide (SiOx) layer.
According to embodiments of the invention, the thickness of above-mentioned transparent surface layer is about 0.1 to 5 nanometer.
According to embodiments of the invention, the material of above-mentioned anti-reflecting layer comprises silicon nitride (SiNx)。
It is another aspect of the invention to provide the manufacture method of a kind of solaode.This manufacture method bag
Contain: form the first type semiconductor layer on Second-Type semiconductor substrate；Remove covering Second-Type semiconductor substrate
First type semiconductor layer at edge, and expose the edge of Second-Type semiconductor substrate；Form transparent surface layer
In the first type semiconductor layer；And form anti-reflecting layer on transparent surface layer.
According to embodiments of the invention, above-mentioned first type semiconductor layer is n type semiconductor layer, and Second-Type
Semiconductor substrate is P-type semiconductor substrate.
According to embodiments of the invention, above-mentioned formation the first type semiconductor layer is on Second-Type semiconductor substrate
Method comprises vapour deposition method, sputtering method, print process, chemical vapour deposition technique or physical vaporous deposition.
According to embodiments of the invention, above-mentioned the first type half removing the edge covering Second-Type semiconductor substrate
The method of conductor layer comprises wet etch method.
According to embodiments of the invention, above-mentioned formation transparent surface layer is to form silicon in the first type semiconductor layer
Oxide skin(coating) is in the first type semiconductor layer.
According to embodiments of the invention, above-mentioned formation transparent surface layer method bag in the first type semiconductor layer
Containing atmospheric plasma method (Atmospheric-pressure plasma, AP-plasma).
According to embodiments of the invention, above-mentioned in the first type removing the edge covering Second-Type semiconductor substrate
After semiconductor layer, directly utilize atmospheric plasma method, form transparent surface layer in the first type semiconductor layer.
According to embodiments of the invention, above-mentioned formation anti-reflecting layer is to form silicon nitride layer on transparent surface layer
On transparent surface layer.
According to embodiments of the invention, above-mentioned formation anti-reflecting layer method on transparent surface layer comprises evaporation
Method, sputtering method, print process, chemical vapour deposition technique or physical vaporous deposition.
Accompanying drawing explanation
Fig. 1 is the profile according to a kind of solaode depicted in one embodiment of the invention；And
Fig. 2 A～Fig. 2 D is the manufacturer according to a kind of solaode depicted in one embodiment of the invention
Each stage profile of method.
Detailed description of the invention
Then with embodiment and coordinate accompanying drawing to describe the present invention in detail, accompanying drawing or describe in, similar or phase
With part be to use identical symbol or numbering.In the accompanying drawings, the shape of embodiment or thickness may expand,
To simplify or convenient sign, and in accompanying drawing, the part of element will describe with word.Apprehensible, do not illustrate
Or the element not described can be for being familiar with the various patterns known to this those skilled in the art.
Term as used herein is only for describing the purpose of specific embodiment and being not intended to limit the present invention.
As used herein, singulative " " (a, an) and " being somebody's turn to do " (the) are intended to also include plural form, unless this
Literary composition separately explicitly indicates that.Should be further appreciated that, when using in this manual, term " comprises
" (comprises and/or comprising) specifies the feature described in existing, integer, step, running, element
And/or component, but be not precluded from exist or add one or more further feature, integer, step, running,
Element, component and/or its group.Herein by reference to showing of idealized embodiments (and the intermediate structure) for the present invention
The cross section explanation of meaning property explanation describes embodiments of the invention.So, we by expection deviate these say
Bright shape due to (such as) manufacturing technology and/or the change of tolerance.Therefore, should be by the enforcement of the present invention
Example is considered limited to specific region shape illustrated herein, and will include resulting from the shape that (such as) manufactures
Change, and region illustrated in these figures is essentially schematically, and its shape is not intended to explanation equipment
The true form in region and be not intended to limit scope of the invention.
For solving prior art problem encountered, the invention discloses solaode and the system thereof of a kind of novelty
Making method, it can promote the ability of anti-electroluminescent decline and not affect solar battery efficiency.
Fig. 1 is the profile according to a kind of solaode 100 depicted in one embodiment of the invention.?
In Fig. 1, solaode 100 comprises photoelectric conversion substrate 110, transparent surface layer 120, anti-reflecting layer
130 and upper electrode layer 140.
Photoelectric conversion substrate 110 has upper surface 110a.According to embodiments of the invention, opto-electronic conversion base
Plate 110 comprises n type semiconductor layer 114 and p type semiconductor layer 112, as shown in Figure 1.According to the present invention
Embodiment, photoelectric conversion substrate 110 is silicon substrate.
Transparent surface layer 120 is arranged on the upper surface 110a of photoelectric conversion substrate 110.In FIG, N
Type semiconductor layer 114 is arranged on p type semiconductor layer 112, and transparent surface layer 120 is arranged at N-type
On semiconductor layer 114.According to embodiments of the invention, transparent surface layer 120 is oxide skin(coating).According to this
Inventive embodiment, above-mentioned oxide skin(coating) is Si oxide (SiOx) layer.According to embodiments of the invention, thoroughly
The thickness of bright junction layer 120 is about 0.1 to 5 nanometer.
Anti-reflecting layer 130 is arranged on transparent surface layer 120.According to embodiments of the invention, anti-reflecting layer
The material of 130 comprises silicon nitride (SiNx)。
Upper electrode layer 140 is arranged among transparent surface layer 120 and anti-reflecting layer 130, and is electrically connected at
On the upper surface 110a of photoelectric conversion substrate 110.
Fig. 2 A～Fig. 2 D is the system according to a kind of solaode 200 depicted in one embodiment of the invention
Make each stage profile of method.
In fig. 2, the first type semiconductor layer 214 is formed on Second-Type semiconductor substrate 212.According to
Embodiments of the invention, the first type semiconductor layer 214 is n type semiconductor layer, and Second-Type is semiconductor-based
Plate 212 is P-type semiconductor substrate.According to embodiments of the invention, the first type semiconductor layer 214 is formed at
Method on Second-Type semiconductor substrate 212 comprises vapour deposition method, sputtering method, print process, chemical gaseous phase deposition
Method or physical vaporous deposition.
In fig. 2b, the of the edge 212a being covered in Second-Type semiconductor substrate 212 in 2A figure is removed
One type semiconductor layer 214, and expose the edge 212a of Second-Type semiconductor substrate 212.According to the present invention's
Embodiment, removes first type semiconductor layer 214 of the edge 212a being covered in Second-Type semiconductor substrate 212
Method comprise wet etch method.
In fig. 2 c, transparent surface layer 220 is formed in the first type semiconductor layer 214.According to the present invention
Embodiment, transparent surface layer 220 be formed in the first type semiconductor layer 214 be formed silicon oxide layer in
In first type semiconductor layer 214.According to embodiments of the invention, transparent surface layer 220 is formed at the first type
Method on semiconductor layer 214 comprise atmospheric plasma method (Atmospheric-pressure plasma,
AP-plasma)。
According to embodiments of the invention, removing the edge 212a's that covers Second-Type semiconductor substrate 212
After first type semiconductor layer 214, directly utilize atmospheric plasma method, form transparent surface layer 220 in the
In one type semiconductor layer 214.According to embodiments of the invention, the upper surface of the first type semiconductor layer 214 is
Utilize atmospheric plasma method to modify, make to be that the upper surface of hydrophobic first type semiconductor layer 214 changes originally
Matter becomes hydrophilic silicon oxide layer (i.e. transparent surface layer 220).According to embodiments of the invention, transparent
The contact angle of junction layer 220 is less than 10 degree.
The solaode that table one is provided by conventional solar cell and embodiments of the invention anti-electroluminescent
The comparison of decline (PID) ability
As shown in Table 1, utilizing atmospheric plasma method to carry out the solaode modified, it is through electroluminescent decline
(PID) the battery efficiency down ratio after test is significantly less than traditional solaode.On the other hand, exist
After utilizing atmospheric plasma method to modify, the solar energy base either made with monocrystal silicon or polysilicon
Plate, it is the least that its battery efficiency down ratio after PID tests is significantly less than traditional solaode
In conventional solar cell.
In figure 2d, anti-reflecting layer 230 is formed on transparent surface layer 220.Enforcement according to the present invention
Example, it is to form silicon nitride layer in transparent surface layer 220 that anti-reflecting layer 230 is formed on transparent surface layer 220
On.According to embodiments of the invention, the method that anti-reflecting layer 230 is formed on transparent surface layer 220 comprises
Vapour deposition method, sputtering method, print process, chemical vapour deposition technique or physical vaporous deposition.
In one embodiment of this invention, solaode comprises photoelectric conversion substrate, transparent surface layer, resists
Reflecting layer and upper electrode layer.Photoelectric conversion substrate has upper surface.Transparent surface layer is arranged at opto-electronic conversion base
On the upper surface of plate.Anti-reflecting layer is arranged on transparent surface layer.Upper electrode layer be arranged at transparent surface layer with
Among anti-reflecting layer, and it is electrically connected on the upper surface of photoelectric conversion substrate.
In another embodiment of the invention, the manufacture method of solaode comprises: first type that formed partly is led
Body layer is on Second-Type semiconductor substrate；The first type removing the edge covering Second-Type semiconductor substrate is partly led
Body layer, and expose the edge of Second-Type semiconductor substrate；Form transparent surface layer in the first type semiconductor layer；
And form anti-reflecting layer on transparent surface layer.
Although embodiments of the invention are the most disclosed above, so it is not limited to the present invention, any is familiar with this
Those skilled in the art, without departing from the spirit and scope of the present invention, when doing a little change and retouching, therefore originally
The protection domain of invention is when being defined in the range of standard with appending claims.
Claims (17)
1. a solaode, it is characterised in that comprise:
One photoelectric conversion substrate, has a upper surface；
One transparent surface layer, is arranged on this upper surface of this photoelectric conversion substrate；
One anti-reflecting layer, is arranged on this transparent surface layer；And
One upper electrode layer, is arranged among this transparent surface layer and this anti-reflecting layer, and is electrically connected at this light
On this upper surface of electricity conversion baseplate.
Solaode the most according to claim 1, it is characterised in that this photoelectric conversion substrate bag
Containing a n type semiconductor layer and a p type semiconductor layer.
Solaode the most according to claim 2, it is characterised in that this n type semiconductor layer sets
It is placed on this p type semiconductor layer, and this transparent surface layer is arranged on this n type semiconductor layer.
Solaode the most according to claim 1, it is characterised in that this photoelectric conversion substrate is
One silicon substrate.
Solaode the most according to claim 1, it is characterised in that this transparent surface layer is one
Oxide skin(coating).
Solaode the most according to claim 5, it is characterised in that this oxide skin(coating) is a silicon
Oxide skin(coating).
Solaode the most according to claim 1, it is characterised in that the thickness of this transparent surface layer
Degree is 0.1 to 5 nanometer.
Solaode the most according to claim 1, it is characterised in that the material of this anti-reflecting layer
Comprise silicon nitride.
9. the manufacture method of a solaode, it is characterised in that comprise:
Form one first type semiconductor layer on a Second-Type semiconductor substrate；
Remove this first type semiconductor layer at an edge covering this Second-Type semiconductor substrate, and expose this
This edge of two type semiconductor substrates；
Form a transparent surface layer in this first type semiconductor layer；And
Form an anti-reflecting layer on this transparent surface layer.
The manufacture method of solaode the most according to claim 9, it is characterised in that this is first years old
Type semiconductor layer is a n type semiconductor layer, and this Second-Type semiconductor substrate is a P-type semiconductor substrate.
The manufacture method of 11. solaodes according to claim 9, it is characterised in that being formed should
First type semiconductor layer method on this Second-Type semiconductor substrate comprise vapour deposition method, sputtering method, print process,
Chemical vapour deposition technique or physical vaporous deposition.
The manufacture method of 12. solaodes according to claim 9, it is characterised in that remove and cover
The method of this first type semiconductor layer covering this edge of this Second-Type semiconductor substrate comprises wet etch method.
The manufacture method of 13. solaodes according to claim 9, it is characterised in that being formed should
Transparent surface layer is to form a silicon oxide layer in this first type semiconductor layer in this first type semiconductor layer
On.
The manufacture method of 14. solaodes according to claim 9, it is characterised in that being formed should
Transparent surface layer method in this first type semiconductor layer comprises atmospheric plasma method.
The manufacture method of 15. solaodes according to claim 14, it is characterised in that moving
After this first type semiconductor layer at this edge covering this Second-Type semiconductor substrate, directly utilize air
Plasma method, forms this transparent surface layer in this first type semiconductor layer.
The manufacture method of 16. solaodes according to claim 9, it is characterised in that being formed should
Anti-reflecting layer is to form a silicon nitride layer on this transparent surface layer on this transparent surface layer.
The manufacture method of 17. solaodes according to claim 9, it is characterised in that being formed should
Anti-reflecting layer method on this transparent surface layer comprise vapour deposition method, sputtering method, print process, chemical gaseous phase sink
Area method or physical vaporous deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510159282.4A CN106159023A (en) | 2015-04-07 | 2015-04-07 | Solaode and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510159282.4A CN106159023A (en) | 2015-04-07 | 2015-04-07 | Solaode and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106159023A true CN106159023A (en) | 2016-11-23 |
Family
ID=57338527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510159282.4A Pending CN106159023A (en) | 2015-04-07 | 2015-04-07 | Solaode and manufacture method thereof |
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| Country | Link |
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| CN (1) | CN106159023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994080A (en) * | 2017-11-24 | 2018-05-04 | 河南理工大学 | A kind of opto-electronic conversion assembly, solar cell and power supply unit |
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| CN103022245A (en) * | 2011-09-20 | 2013-04-03 | 气体产品与化学公司 | Oxygen containing precursors for photovoltaic passivation |
| CN104103712A (en) * | 2013-04-15 | 2014-10-15 | 翔飞科技有限公司 | Photovoltaic element manufacturing method |
| CN104143590A (en) * | 2014-08-08 | 2014-11-12 | 中国科学院宁波材料技术与工程研究所 | Simple and fast silicon surface passivation method |
| CN104303316A (en) * | 2012-02-23 | 2015-01-21 | 弗劳恩霍弗实用研究促进协会 | Method for producing a solar cell |
-
2015
- 2015-04-07 CN CN201510159282.4A patent/CN106159023A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022245A (en) * | 2011-09-20 | 2013-04-03 | 气体产品与化学公司 | Oxygen containing precursors for photovoltaic passivation |
| CN104303316A (en) * | 2012-02-23 | 2015-01-21 | 弗劳恩霍弗实用研究促进协会 | Method for producing a solar cell |
| CN104103712A (en) * | 2013-04-15 | 2014-10-15 | 翔飞科技有限公司 | Photovoltaic element manufacturing method |
| CN104143590A (en) * | 2014-08-08 | 2014-11-12 | 中国科学院宁波材料技术与工程研究所 | Simple and fast silicon surface passivation method |
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| CN107994080A (en) * | 2017-11-24 | 2018-05-04 | 河南理工大学 | A kind of opto-electronic conversion assembly, solar cell and power supply unit |
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