CN106129188A - Thin-film solar cells and preparation method thereof - Google Patents
Thin-film solar cells and preparation method thereof Download PDFInfo
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- CN106129188A CN106129188A CN201610810604.1A CN201610810604A CN106129188A CN 106129188 A CN106129188 A CN 106129188A CN 201610810604 A CN201610810604 A CN 201610810604A CN 106129188 A CN106129188 A CN 106129188A
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- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 89
- 239000010408 film Substances 0.000 claims abstract description 44
- 210000001142 back Anatomy 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 35
- 238000005516 engineering process Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims description 65
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 29
- 238000005477 sputtering target Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 239000005083 Zinc sulfide Substances 0.000 claims description 15
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 15
- 239000011787 zinc oxide Substances 0.000 claims description 14
- 239000013528 metallic particle Substances 0.000 claims description 11
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000007641 inkjet printing Methods 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides the manufacture method of a kind of thin-film solar cells, the following steps including utilizing dry-film technology to carry out: form dorsum electrode layer in substrate；Described dorsum electrode layer is formed absorbed layer；Described absorbed layer is formed cushion；Described cushion is formed Window layer.Correspondingly, the present invention also provides for a kind of thin-film solar cells being made up of above-mentioned manufacture method.The present invention can improve the production efficiency of thin-film solar cells, reduces film layer defects.
Description
Technical field
The present invention relates to area of solar cell, be specifically related to a kind of thin-film solar cells and preparation method thereof.
Background technology
Thin-film solar cells due to its do not limited by resource environment, light transmission is strong, generating dutation length, industrial chain are short, become
This is low, payoff period is short, affected the advantages such as little, application is wide by variations in temperature, it has also become the main flow of solaode development.Thin
Film solar cell includes the film layers such as dorsum electrode layer, absorbed layer, cushion, Window layer.The making of current thin film solaode
Technique generally uses the technique that wet-dry change mixes, and cushion uses water-laid film (e.g., chemical thought) method to be formed, other films
Layer is general uses dry-film technology to be formed.But, owing to needing the solution carrying out complexity to prepare during water-laid film, thus result in
Technique is complicated, and production efficiency is relatively low；And after having prepared, remaining waste liquid easily causes pollution.
Summary of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is proposed that a kind of thin film solar electricity
Pond and preparation method thereof, to improve production efficiency, reduces and pollutes.
In order to solve one of above-mentioned technical problem, the present invention provides the manufacture method of a kind of thin-film solar cells, including
Utilize the following steps that dry-film technology is carried out:
Substrate is formed dorsum electrode layer；
Described dorsum electrode layer is formed absorbed layer；
Described absorbed layer is formed cushion；
Described cushion is formed Window layer.
Preferably, described dry-film technology is magnetron sputtering technique.
Preferably, in the step forming described dorsum electrode layer: magnetron sputtering power supply is DC source, the material of sputtering target
Including molybdenum, sputter gas includes argon, and sputtering power is between 150W～250W, and sputtering pressure is between 0.2Pa～0.6Pa.
Preferably, in the step forming described absorbed layer: magnetron sputtering power supply is radio-frequency power supply, the material bag of sputtering target
Including CIGS, sputter gas includes argon, sputtering pressure between 0.3Pa～0.8Pa, sputtering power 150W～250W it
Between.
Preferably, in the step forming described cushion: magnetron sputtering power supply is radio-frequency power supply, the material bag of sputtering target
Including zinc sulfide, sputter gas includes argon, sputtering pressure between 0.3Pa～0.8Pa, sputtering power 150W～250W it
Between.
Preferably, in the step forming described Window layer: magnetron sputtering power supply is radio-frequency power supply, the material bag of sputtering target
Including the zinc oxide of aluminum doping, sputter gas includes argon, sputtering pressure between 0.2Pa～0.5Pa, sputtering power at 200W～
Between 270W.
Preferably, the material of described sputtering target includes zinc oxide and aluminium sesquioxide, the molar percentage of described zinc oxide
Between 97%～98%, the molar percentage of described aluminium sesquioxide is between 2%～3%.
Preferably, described manufacture method also includes: anneal described Window layer, and annealing temperature is at 300 DEG C～400 DEG C
Between.
Preferably, in the step forming absorbed layer, cushion and Window layer, all utilize mask plate at described dorsum electrode layer
Presumptive area block, so that after described absorbed layer, cushion and Window layer are formed, described presumptive area is exposed
Come；
Described manufacture method also includes:
The described presumptive area of described dorsum electrode layer is formed the first output electrode；
Described Window layer is formed the second output electrode.
Preferably, the step forming the first output electrode in the presumptive area of described dorsum electrode layer includes:
The method utilizing inkjet printing prints the first solution being mixed with metallic particles, described metal in described presumptive area
The particle diameter of granule is nanoscale；
Described first solution is solidified, to form the first output electrode of metal material.
Preferably, the step forming the second output electrode in described Window layer includes:
The method utilizing inkjet printing prints the second solution being mixed with metallic particles, described metal in described Window layer
The particle diameter of granule is nanoscale；
Described second solution is solidified, to form the second output electrode of metal material.
Correspondingly, the present invention also provides for a kind of thin-film solar cells, and described thin-film solar cells utilizes the present invention to carry
The above-mentioned manufacture method of confession prepares.
The present invention, when making thin-film solar cells, utilizes dry-film technology to form the back of the body electricity of thin-film solar cells
Pole layer, absorbed layer, cushion and Window layer, compare with the method for prior art wet-dry change technique mixing, the technique of dry method film forming
Relatively simple, production efficiency is higher, it is adaptable to large-scale production；Also waste liquor contamination will not be produced；Further, the interface of the film layer of formation
Defect is less, quality is higher.Wherein, when dry-film technology specifically uses magnetron sputtering technique, directly sputtering target is carried out
Sputtering, controllability is more preferable.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, with following tool
Body embodiment is used for explaining the present invention together, but is not intended that limitation of the present invention.In the accompanying drawings:
Fig. 1 is the manufacture method flow chart of the thin-film solar cells provided in embodiments of the invention；
Fig. 2 to Fig. 6 is the structure change schematic diagram formed when making thin-film solar cells.
Wherein, reference is:
1, substrate；2, dorsum electrode layer；3, absorbed layer；4, cushion；5, Window layer；6, the first output electrode；7, second is defeated
Go out electrode.
Detailed description of the invention
Below in conjunction with accompanying drawing, the detailed description of the invention of the present invention is described in detail.It should be appreciated that this place is retouched
The detailed description of the invention stated is merely to illustrate and explains the present invention, is not limited to the present invention.
As an aspect of of the present present invention, it is provided that the manufacture method of a kind of thin-film solar cells, as it is shown in figure 1, described system
The following steps utilizing dry-film technology to carry out are included as method:
S1, on the base 1 formation dorsum electrode layer 2 (as shown in Figure 2)；Alternatively, substrate 1 uses silicon base, dorsum electrode layer 2
For molybdenum film layer.It addition, substrate 1 can also be carried out before forming dorsum electrode layer 2, to prevent from dorsum electrode layer 2 mixes
Impurity.
S2, formation absorbed layer 3 (as shown in Figure 3) on dorsum electrode layer 2；Alternatively, absorbed layer 3 is that absorbance is high, stable
CIGS (CIGS) the film layer that property is good.
S3, formation cushion 4 (as shown in Figure 4) on absorbed layer 3；Alternatively, cushion 4 is zinc sulfide (ZnS) film layer.
S4, formation Window layer 5 (as shown in Figure 5) on cushion 4；Alternatively, the zinc oxide that Window layer 5 is adulterated for aluminum
(ZAO) film layer.It is appreciated that absorbed layer 3, cushion 4 and Window layer 5 constitute PN junction, when light is irradiated on PN junction, produces
Having given birth to electron hole pair, under PN junction electric field action, flow between P district and N district in electronics and hole, and N district forms the electricity of surplus
Subproduct is tired, P district forms the accumulation in hole of surplus, thus set up a P district be positive N district be negative photo-induced voltage (photoproduction electricity
Pressure), form photogenerated current after accessing load.
Owing to the present invention is when making thin-film solar cells, dorsum electrode layer 2, absorbed layer 3, cushion 4 and Window layer 5 are equal
Employing dry-film technology is made, and compares with the method for prior art wet-dry change technique mixing, when the present invention carries out dry method film forming,
Be made without the configuration of solution, therefore, the manufacture method of the present invention can Simplified flowsheet step, and different film layer is by identical
Film-forming process carry out so that the seriality between the preparation of different film layer is good, and then improve production efficiency；Further, utilize
Also waste liquor contamination will not be produced during dry method film forming.It addition, compare with water-laid film technique, in the film layer that dry-film technology is formed
Defect less, thus improve the quality of thin-film solar cells.
Preferably, described dry-film technology is magnetron sputtering technique.When utilizing magnetron sputtering technique film forming, directly utilize
Sputter gas bombardment sputtering target, it is not necessary to carrying out the chemical reaction of complexity, controllability is strong, goes for large-scale raw
Produce.
Specifically, in step sl: the magnetron sputtering power supply that magnetron sputtering technique is used is DC source, sputtering target
Material includes molybdenum (Mo), and sputter gas includes argon (Ar), thus sputters formation molybdenum electrode layer.Wherein, sputtering power is at 150W
～between 250W, sputtering pressure is between 0.2Pa～0.6Pa.In sputter procedure, specifically can by control sputtering time,
Thickness is formed as 80nm～the dorsum electrode layer 2 of 120nm with sputtering.
In step s 2: the magnetron sputtering power supply that magnetron sputtering technique is used is radio-frequency power supply, the material bag of sputtering target
Including CIGS (CIGS), sputter gas includes argon, thus sputters formation CIGS (CIGS) film layer as absorbed layer 3,
The stability utilizing CIGS film layer to enable to thin-film solar cells as absorbed layer 3 is higher, radiation resistance more preferable,
Conversion efficiency is higher.Wherein, the gas flow of argon between 20sccm～40sccm, sputtering pressure 0.3Pa～0.8Pa it
Between, sputtering power is between 150W～250W.In sputter procedure, specifically can be by controlling sputtering time, to form thickness
CuInGaSe absorbed layer 3 for 380nm～420nm.
In step s3: the magnetron sputtering power supply that magnetron sputtering technique is used is radio-frequency power supply, the material bag of sputtering target
Including zinc sulfide (ZnS), sputter gas includes argon, forms zinc sulfide (ZnS) film layer as cushion 4 using sputtering.Wherein, sputtering
Air pressure is between 0.3Pa～0.8Pa, and sputtering power is between 150W～250W.Chemical bath etc. is wet with utilizing in prior art
Method film-forming process forms cadmium sulfide (CdS) cushion or cadmium selenide (CdSe) cushion is compared, and utilizes magnetron sputtering technique to be formed
Zinc sulfide cushion 4 not only makes processing technology simpler, controlled, but also decreases pollution.In sputter procedure, specifically may be used
With by controlling sputtering time, to form thickness as 80nm～the zinc sulfide cushion 4 of 120nm.
In step s 4: the magnetron sputtering power supply that magnetron sputtering technique is used is radio-frequency power supply, the material bag of sputtering target
Including the zinc oxide of aluminum doping, sputter gas includes argon, to form zinc oxide (ZAO) the film layer of aluminum doping as Window layer 5.Its
In, sputtering pressure is between 0.2Pa～0.5Pa, and sputtering power is between 200W～270W, and the material of described sputtering target specifically wraps
Include zinc oxide (ZnO) and aluminium sesquioxide (Al2O3), the molar percentage of zinc oxide between 97%～98%, aluminium sesquioxide
Molar percentage between 2%～3%.In sputter procedure, by control sputtering time, with formed thickness as 380nm～
The Window layer 5 of 420nm.
In order to discharge the stress within Window layer 5, described manufacture method also includes: anneal Window layer 5, annealing temperature
Degree between 300 DEG C～400 DEG C, to improve the quality of Window layer 5, and Window layer 5 annealed after electric conductivity and light transmission
Increase.
Further, described manufacture method also includes the step forming output electrode, specifically, in step S2, step S3
With in step S4, mask plate is all utilized to block in the presumptive area of dorsum electrode layer 2, so that absorbed layer 3, cushion 4 and window
After mouthful layer 5 is formed, described presumptive area by exposed out.Described presumptive area is in particular close to the region at dorsum electrode layer 2 edge
(such as the right part of dorsum electrode layer 2 in Fig. 6).Described manufacture method also includes:
The presumptive area of dorsum electrode layer 2 is formed the first output electrode 6.This step specifically includes: utilize inkjet printing
Method print in described presumptive area and be mixed with the first solution of metallic particles, the particle diameter of described metallic particles is nanoscale；
Afterwards, described first solution is solidified, to form the first output electrode 6 of metal material.Wherein, in order to form grain
The nano-particle that footpath is less, described metallic particles can use nano-Ag particles, described first solution use nano-Ag particles with
The conductive ink that deionized water, ethanol equal solvent are mixed to form.
Window layer 5 is formed the second output electrode 7.This step specifically includes: utilize the method for inkjet printing at window
Printing the second solution being mixed with metallic particles on layer 5, the particle diameter of described metallic particles is nanoscale；Afterwards, to described second
Solution solidifies, to form the second output electrode 7 of metal material.Wherein, the material of the second output electrode 7 can be with first
The material of output electrode 6 is identical, i.e. described second solution is identical with described first solution.
Inkjet printing is utilized to form the method for the first output electrode 6 and the second output electrode 7 simple and convenient；And without using
Mask plate, reduces production cost.
Several specific embodiments of the manufacture method of thin film solar cell are introduced below in conjunction with Fig. 2 to Fig. 6.
Embodiment 1
The first step, it is provided that substrate 1, and substrate 1 is carried out.
Second step, utilizes magnetron sputtering technique to form dorsum electrode layer 2 on the base 1, as shown in Figure 2.Magnetic control in this step
The magnetron sputtering power supply that sputtering technology uses is DC source, and the material of sputtering target includes molybdenum (Mo), and sputter gas includes argon
(Ar), sputtering power is 150W, and sputtering pressure is 0.2Pa, and sputtering forms the molybdenum electrode layer that thickness is 80nm.
3rd step, utilizes mask plate to block the presumptive area of dorsum electrode layer 2, and uses magnetron sputtering technique at the back of the body
On electrode layer 2, sputtering forms absorbed layer 3 (as shown in Figure 3).The magnetron sputtering power supply that in this step, magnetron sputtering technique uses is
Radio-frequency power supply, the material of sputtering target includes CIGS (CIGS), and sputter gas includes argon, and gas flow is 20sccm, spatters
Pressure of emanating is 0.3Pa, and sputtering power is 150W, and substrate 1 temperature is 550 DEG C, and sputtering forms the CIGS that thickness is 380nm and inhales
Receive layer 3.
4th step, utilizes mask plate to block described presumptive area, and uses magnetron sputtering technique on absorbed layer 3
Sputtering forms cushion 4, as shown in Figure 4.The magnetron sputtering power supply that in this step, magnetron sputtering technique uses is radio-frequency power supply, spatters
The material shot at the target includes zinc sulfide (ZnS), and sputter gas includes argon, and sputtering pressure is 0.3Pa, and sputtering power is 150W, spatters
Penetrate and form the zinc sulfide cushion 4 that thickness is 80nm.
5th step, utilizes mask plate to block described presumptive area, and uses magnetron sputtering technique on cushion 4
Sputtering forms Window layer 5, as shown in Figure 5.In this step, the magnetron sputtering power supply that magnetron sputtering technique uses is radio-frequency power supply,
The material of sputtering target includes ZAO, more specifically, the material of described sputtering target includes: (ZnO)0.97(Al2O3)0.03, sputter gas
Including argon, sputtering pressure is 0.3Pa, and sputtering power is 200W, using sputtering formed aluminum doping zinc oxide (ZAO) film layer as
Window layer 5, the thickness of Window layer 5 is 380nm.Annealing Window layer 5 afterwards, annealing temperature is 300 DEG C, thus improves window
The light transmittance of mouth layer 5 and electric conductivity.
6th step, is mixed to form conductive ink by nano-Ag particles and deionized water, ethanol equal solvent；Then at back electrode
Conductive ink described in the presumptive area of layer 2 and Window layer 5 inkjet printing；Afterwards described conductive ink is solidified, form the
One output electrode 6 and the second output electrode 7.
It should be noted that the first step is all carried out to the magnetron sputtering technique in the 5th step in vacuum chamber, specifically,
When forming each film layer, all vacuum at processing chamber reaches to proceed by spatter film forming during 8.0 × 10E-4Pa；Further, exist
Every time before spatter film forming, be the most first passed through pure argon pre-sputtering and clean described sputtering target in about 10 minutes, prevent described in spatter
Impurity on shooting at the target mixes in film layer to be formed.
Embodiment 2
The present embodiment is similar with the method for embodiment 1, and the most only difference to embodiment 2 with embodiment 1 is described.
When utilizing magnetron sputtering technique to form dorsum electrode layer 2, sputtering power is 250W, and sputtering pressure is 0.6Pa, formation
Dorsum electrode layer 2 thickness is 120nm.
When utilizing magnetron sputtering technique to form absorbed layer 3, the gas flow of argon is 40sccm, and sputtering pressure is 0.8Pa,
Sputtering power is 250W, and absorbed layer 3 thickness of formation is 420nm.
When utilizing magnetron sputtering technique to form cushion 4, sputtering pressure is 0.8Pa, and sputtering power is 200W, delaying of formation
The thickness rushing layer 4 is 120nm.
When utilizing magnetron sputtering technique to form Window layer 5, sputtering pressure is 0.5Pa, and sputtering power is 270W, described sputtering
The material of target includes: (ZnO)0.975(Al2O3)0.025, the thickness of the Window layer 5 of formation is 420nm.When Window layer 5 is annealed, move back
Fire temperature is 400 DEG C.
Embodiment 3
The present embodiment is similar with the method for embodiment 1, and the most only difference to embodiment 3 with embodiment 1 is described.
When utilizing magnetron sputtering technique to form dorsum electrode layer 2, sputtering power is 200W, and sputtering pressure is 0.3Pa, formation
Dorsum electrode layer 2 thickness is 100nm.Compared with embodiment 1 and embodiment 2, the present embodiment can form surface with this understanding
More smooth, homogeneity is higher, the more preferable dorsum electrode layer of electric conductivity 2.
When utilizing magnetron sputtering technique to form absorbed layer 3, the gas flow of argon is 25sccm, and sputtering pressure is 0.4Pa,
Sputtering power is 200W, and sputtering forms the CuInGaSe absorbed layer 3 that thickness is 400nm.Compared with embodiment 1 and embodiment 2, this
The film layer defects of the CuInGaSe absorbed layer 3 formed with this understanding in embodiment is less, stability is more preferable.
When utilizing magnetron sputtering technique to form cushion 4, sputtering pressure is 0.4Pa, and sputtering power is 200W, and sputtering is formed
Thickness is the zinc sulfide cushion 4 of 100nm.Compared with embodiment 1 and embodiment 2, the present embodiment is formed with this understanding
The defect of zinc sulfide cushion 4 is less, homogeneity is more preferable.
When utilizing magnetron sputtering technique to form Window layer 5, sputtering pressure is 0.2Pa, and the material of described sputtering target includes
(ZnO)0.98(Al2O3)0.02, sputtering power is 255W, and the thickness of Window layer 5 is 400nm.Annealing temperature when Window layer 5 is annealed
Degree is 350 DEG C.Compared with embodiment 1 and embodiment 2, Window layer 5 electric conductivity formed with this understanding in the present embodiment more preferably,
Light transmittance is more than 85% such that it is able to improve the absorptivity of thin-film solar cells.
As another aspect of the present invention, by a kind of thin-film solar cells, in the employing of described thin-film solar cells
State manufacture method to prepare.
Above for the description to the thin-film solar cells that the present invention provides and preparation method thereof, it can be seen that the present invention
When making thin-film solar cells, dry-film technology is utilized to form the dorsum electrode layer of thin-film solar cells, absorbed layer, delay
Rushing layer and Window layer, compare with the method for prior art wet-dry change technique mixing, the technique of dry method film forming is relatively simple, production efficiency
Higher, it is adaptable to large-scale production；Also waste liquor contamination will not be produced；Further, the boundary defect of the film layer of formation is less, quality relatively
High.Wherein, when dry-film technology specifically uses magnetron sputtering technique, the material of sputtering target is directly set, then to sputtering target
Sputter, it is not necessary to carrying out the reaction of complexity, controllability is more preferable.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the exemplary enforcement that uses
Mode, but the invention is not limited in this.For those skilled in the art, in the essence without departing from the present invention
In the case of god and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (12)
1. the manufacture method of a thin-film solar cells, it is characterised in that include utilizing below dry-film technology carries out
Step:
Substrate is formed dorsum electrode layer；
Described dorsum electrode layer is formed absorbed layer；
Described absorbed layer is formed cushion；
Described cushion is formed Window layer.
Manufacture method the most according to claim 1, it is characterised in that described dry-film technology is magnetron sputtering technique.
Manufacture method the most according to claim 2, it is characterised in that in the step forming described dorsum electrode layer: magnetic control
Shielding power supply is DC source, and the material of sputtering target includes that molybdenum, sputter gas include argon, sputtering power 150W～250W it
Between, sputtering pressure is between 0.2Pa～0.6Pa.
Manufacture method the most according to claim 2, it is characterised in that in the step forming described absorbed layer: magnetic control spatters
Radio source is radio-frequency power supply, and the material of sputtering target includes that CIGS, sputter gas include argon, sputtering pressure at 0.3Pa～
Between 0.8Pa, sputtering power is between 150W～250W.
Manufacture method the most according to claim 2, it is characterised in that in the step forming described cushion: magnetic control spatters
Radio source is radio-frequency power supply, and the material of sputtering target includes that zinc sulfide, sputter gas include argon, sputtering pressure at 0.3Pa～
Between 0.8Pa, sputtering power is between 150W～250W.
Manufacture method the most according to claim 2, it is characterised in that in the step forming described Window layer: magnetic control spatters
Radio source is radio-frequency power supply, and the material of sputtering target includes the zinc oxide that aluminum adulterates, and sputter gas includes that argon, sputtering pressure exist
Between 0.2Pa～0.5Pa, sputtering power is between 200W～270W.
Manufacture method the most according to claim 6, it is characterised in that the material of described sputtering target includes zinc oxide and three oxygen
Changing two aluminum, the molar percentage of described zinc oxide is between 97%～98%, and the molar percentage of described aluminium sesquioxide is 2%
～between 3%.
Manufacture method the most according to claim 1, it is characterised in that described manufacture method also includes: to described Window layer
Annealing, annealing temperature is between 300 DEG C～400 DEG C.
Manufacture method the most according to claim 2, it is characterised in that forming absorbed layer, cushion and the step of Window layer
In Zhou, mask plate is all utilized to block in the presumptive area of described dorsum electrode layer, so that described absorbed layer, cushion and window
Layer formed after, described presumptive area by exposed out；
Described manufacture method also includes:
The described presumptive area of described dorsum electrode layer is formed the first output electrode；
Described Window layer is formed the second output electrode.
Manufacture method the most according to claim 9, it is characterised in that formed in the presumptive area of described dorsum electrode layer
The step of the first output electrode includes:
The method utilizing inkjet printing prints the first solution being mixed with metallic particles, described metallic particles in described presumptive area
Particle diameter be nanoscale；
Described first solution is solidified, to form the first output electrode of metal material.
11. manufacture methods according to claim 9, it is characterised in that form the second output electrode in described Window layer
Step include:
The method utilizing inkjet printing prints the second solution being mixed with metallic particles, described metallic particles in described Window layer
Particle diameter be nanoscale；
Described second solution is solidified, to form the second output electrode of metal material.
12. 1 kinds of thin-film solar cells, it is characterised in that described thin-film solar cells utilizes in claim 1 to 11 appoints
A described manufacture method of anticipating prepares.
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| CN101840942A (en) * | 2010-05-19 | 2010-09-22 | 深圳丹邦投资集团有限公司 | Thin-film solar cell and manufacturing method thereof |
| CN102903766A (en) * | 2012-10-12 | 2013-01-30 | 华中科技大学 | Cadmium-free copper indium gallium selenium (CIGS) thin-film solar cell and preparation method thereof |
| CN103296139A (en) * | 2013-05-20 | 2013-09-11 | 天津师范大学 | Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer |
| KR20140074441A (en) * | 2012-12-07 | 2014-06-18 | 한국생산기술연구원 | Flexible thin film type Solar Cell and Method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840942A (en) * | 2010-05-19 | 2010-09-22 | 深圳丹邦投资集团有限公司 | Thin-film solar cell and manufacturing method thereof |
| CN102903766A (en) * | 2012-10-12 | 2013-01-30 | 华中科技大学 | Cadmium-free copper indium gallium selenium (CIGS) thin-film solar cell and preparation method thereof |
| KR20140074441A (en) * | 2012-12-07 | 2014-06-18 | 한국생산기술연구원 | Flexible thin film type Solar Cell and Method for manufacturing the same |
| CN103296139A (en) * | 2013-05-20 | 2013-09-11 | 天津师范大学 | Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer |
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