CN106125512B - One kind exposure base station and preparation method thereof, exposure machine - Google Patents
One kind exposure base station and preparation method thereof, exposure machine Download PDFInfo
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- CN106125512B CN106125512B CN201610465462.XA CN201610465462A CN106125512B CN 106125512 B CN106125512 B CN 106125512B CN 201610465462 A CN201610465462 A CN 201610465462A CN 106125512 B CN106125512 B CN 106125512B
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- film layer
- base station
- exposure
- supporting part
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Abstract
The present invention provides a kind of exposure base station and preparation method thereof, exposure machine, belong to technical field of lithography, the problem of it, which can solve the embossing pattern of existing exposure base station, to form aberration pattern in the photoresist of glass substrate, cause to show product drawing poor quality, and yield is low.The body of the exposure base station of the present invention is provided with the first film layer, first film layer is provided with multiple supporting parts, when the substrate to being placed on supporting part is exposed, first film layer and supporting part will not reflectance-transmittance glass substrate unnecessary ultraviolet light, it will not cause to show product formation aberration pattern, product image quality quality is lifted, reduces fraction defective, it is cost-effective.The exposure machine of the present invention is applied to expose various glass substrates, and the exposure large scale that is particularly suitable for use in shows the glass substrate of product.
Description
Technical field
The invention belongs to technical field of lithography, and in particular to one kind exposure base station and preparation method thereof, exposure machine.
Background technology
Photoetching technique is widely used in TFT-LCD and LED electronical display industries, with development in science and technology, large-size glass base
Plate is to lithography requirement more and more higher.Wherein, it is most important to expose flatness and the rational design of base station, is related to display dress
It is set to the quality of product image quality.
Existing exposure machine base station surface has typically carried out anodized (Anodizing), its surface formed with for
Multiple supporting parts (or embossment) of subregion, the effect of embossment are：The absorption affinity zonal control that glass substrate is subject on base station,
So that glass substrate uniform force；Ensure its flatness, to reduce glass substrate deformation；Also reduce glass substrate and base simultaneously
Contact area between platform, avoid the two contact area excessive and form region of no pressure in contact position and cause glass substrate difficulty to be copied mechanically
Problem.
Inventor has found that at least there are the following problems in the prior art：As shown in figure 1, existing base station body 1 is metal
There is one layer of reflector layer 2 material, smooth metal surface, the reflective effect of the embossing pattern 3 on reflector layer 2 and flat reflector layer 2
Fruit is totally different, and after causing exposure, embossing pattern 3 is formed on the photoresist 5 that after exposure technology, can frequently result in substrate 4
Corresponding aberration pattern (Stage mura), particularly after base station surface abrasion, base station flatness produces difference, and aberration pattern will
More serious (it is as shown in Figure 1 that aberration produces principle).Aberration pattern is bad to frequently result in display product drawing poor quality, and yield is inclined
Low, particularly large scale product bad phenomenon is more obvious, and this it is bad be difficult to improve in terms of process conditions overcome.
The content of the invention
The present invention can form aberration pattern for the embossing pattern of existing exposure base station in the photoresist of glass substrate, lead
The problem of cause shows product drawing poor quality, and yield is low, there is provided one kind exposure base station and preparation method thereof, exposure machine.
Technical scheme is used by solving present invention problem：
One kind exposure base station, including：
Base station body；
The first film layer on the base station body；
Multiple supporting parts in first film layer, for contacting simultaneously supporting substrate with substrate；Wherein, described first
Film layer and supporting part are formed by low reflectivity material.
Preferably, the reflectivity of the low reflectivity material is 5%-40%.It is furthermore preferred that the low reflectivity material
Reflectivity be 5%-8%.
Preferably, first film layer is made up of extinction resin material, and the supporting part is transparent resin material.
Preferably, the first film layer absorptance is 75%-91%.
Preferably, the thickness of first film layer is 4-7 μm.
Preferably, it is 10-12 μm in the size of the supporting part on the direction of first film layer.
Preferably, the raw material of first film layer includes：Polyimide preformed polymer, epoxy resin, solvent, and it is ultraviolet
Light absorber.
Preferably, the molecular weight of the polyimide preformed polymer is 800-1200, and the epoxide number of the epoxy resin is
0.41-0.54eq/100g, the polyimide preformed polymer, epoxy resin, UV absorbers (or anti ultraviolet agent), solvent
Mass ratio be (13-18):(2-3)(0.5-1.5):(75-80).
Preferably, the UV absorbers include single benzoic acid resorcinol, septichen phenyl ester, 2-
(2- hydroxy-5-methyl bases phenyl) BTA, 2,4-DihydroxyBenzophenone, ESCALOL 567,2- hydroxyls
Any one or a few in base -4- oxy-octyl benzophenones.
Preferably, the raw material of first film layer also includes in surfactant, age resister, anti-wear agent, solvent
Any one or a few.
Preferably, the polyimide preformed polymer, surfactant, age resister, the mass ratio of anti-wear agent are (13-
18):(0.05-1):(0.04-0.05):(1-2)。
Preferably, the age resister includes phosphite ester, (1,2,2,6,6- pempidine base) phosphite ester, 4- benzene
Formyloxy -2,2, any one or a few in 6,6- tetramethyl piperidines.
Preferably, the viscosity of the raw material of first film layer is 2.1-2.5mPa.s.
Preferably, the raw material of the supporting part includes：Polyimide preformed polymer, carbamate, and initiator.
Preferably, the polyimide preformed polymer, carbamate, and the mass ratio of initiator is (13-18):
(2-3):(0.1-0.15)。
The present invention also provides a kind of preparation method for exposing base station, including：
Form the first film layer on base station body the step of；
Form multiple supporting parts in first film layer the step of；Wherein, first film layer and the supporting part are equal
It is made up of low reflectivity material.
Preferably, it is by the raw material of first film layer form the first film layer on the base station body the step of
It is heating and curing to obtain first film layer after on the base station body.
Preferably, it is described to include form multiple supporting parts in the first film layer the step of：
Will be obtained in first film layer for preparing the raw material of the supporting part
Two film layers；
Using photoetching process so that second film layer forms the pattern with multiple supporting parts.
Preferably, in addition to by the supporting part and first film layer the step of shaping.
Preferably, the described the step of supporting part and first film layer are shaped is to cover pressing plate to the branch
The base station body is heated on support part to eliminate the deformation of the supporting part and first film layer.
The present invention also provides a kind of exposure machine, including above-mentioned exposure bench, and first film layer is not provided with the support
The opening position in portion is provided with adsorption hole.
The body of the exposure base station of the present invention is provided with the first film layer, and the first film layer is provided with multiple supporting parts, when to putting
Put when the substrate on supporting part is exposed, the first film layer and supporting part will not reflectance-transmittance glass substrate it is unnecessary ultraviolet
Light, it will not cause to show product formation aberration pattern, lift product image quality quality, reduce fraction defective, it is cost-effective.The present invention's
Exposure machine is applied to expose various glass substrates, and the exposure large scale that is particularly suitable for use in shows the glass substrate of product.
Brief description of the drawings
Fig. 1 is the structural representation of existing exposure base station；
Fig. 2 is the structural representation of the exposure base station of embodiments of the invention 1,2；
The structural representation for the exposure base station that Fig. 3 is embodiments of the invention 3-5；
The preparation method flow chart for the exposure base station that Fig. 4 is embodiments of the invention 3-5；
Fig. 5 is embodiments of the invention 3-5 exposure base station schematic top plan view；
Wherein, reference is：1st, base station body；2nd, reflector layer；3rd, embossing pattern；4th, substrate；5th, photoresist；6th, first
Film layer；7th, supporting part；8th, adsorption hole.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1：
The present embodiment provides a kind of exposure base station, as shown in Fig. 2 including：Base station body 1；On the base station body 1
The first film layer 6；It is used for multiple supporting parts 7 that simultaneously supporting substrate 4 is contacted with substrate 4 in first film layer 6.Wherein,
First film layer 6 and supporting part 7 are formed by low reflectivity material.
The base station body 1 of the present embodiment is provided with the first film layer 6, and the first film layer 6 is provided with multiple supporting parts 7, when to putting
Put when the substrate 4 on supporting part 7 is exposed, the first film layer 6 and supporting part 7 will not reflectance-transmittance substrate 4 unnecessary purple
Outer light, it will not cause to show product formation aberration pattern, lift product image quality quality, reduce fraction defective, it is cost-effective.
Embodiment 2：
The present embodiment provides a kind of exposure base station, as shown in Fig. 2 including：Base station body 1；On the base station body 1
Thick 4-7 μm of the first film layer 6 being made up of extinction resin material；On at least part position of first film layer 6 by
Transparent resin material forms multiple supporting parts 7.
Wherein, it is embossing pattern to form multiple supporting parts 7 by transparent resin material, for contacting and supporting with substrate 4
Substrate 4.The thickness of transparent resin material layer is 10-12 μm.
The base station body 1 of the present embodiment is provided with the first film layer 6, and the first film layer 6 is provided with multiple supporting parts 7, when to putting
Put when the substrate 4 on supporting part 7 is exposed, the first film layer 6 and supporting part 7 will not reflectance-transmittance substrate 4 unnecessary purple
Outer light, it will not cause to show product formation aberration pattern, lift product image quality quality, reduce fraction defective, it is cost-effective.
Embodiment 3-5：
The present embodiment provides a kind of preparation method of the exposure base station of embodiment 2, as shown in Fig. 3, Fig. 4, Fig. 5, including with
Lower step：
S01, it is heating and curing after the raw material of the first film layer 6 is mixed and is coated on base station body 1 to obtain the first film layer 6.
Specifically, needing to carry out pre-treatment to base station body 1 before coating, by UV light irradiations, ultra-pure water cleans, after drying,
By way of slot coated, control coating machine tells glue amount, by the raw material of the first film layer 6 mixed in base station body 1
On；After the completion of coating, at room temperature, place 7~10 days, solvent is volatilized substantially；Finally it is slowly heated (10 DEG C/h) extremely
200 DEG C, 30min is kept, the first film layer 6 is fully cured, ensure the 5~6um of thickness of the first film layer 6.
The mass fraction of first film layer, 6 each raw material is shown in Table 1：
The mass fraction of each raw material of film layer of table 1 first
Wherein, in embodiment 3-5 in the raw material of the first film layer 6 molecular weight of polyimide preformed polymer be respectively 800,1000,
1200；The epoxide number of epoxy resin is respectively 0.41eq/100g, 0.5eq/100g, 0.54eq/100g.The raw material of first film layer 6
Mixed viscosity is respectively 2.1mPa.s, 2.3mPa.s, 2.5mPa.s.
It should be noted that saturation polyimide preformed polymer, single benzoic acid resorcinol, phosphite ester can ensure
The material of one film layer 6 has ultraviolet absorption ability, and the effect of white carbon is to improve the anti-wear performance of the first film layer 6, and raw material glues
Degree control can ensure the good paintability of material between 2.1-2.5mPa.s.
Wherein, anti ultraviolet agent can also use septichen phenyl ester, the nitrogen of 2- (2- hydroxy-5-methyl bases phenyl) benzo three
The generations such as azoles, 2,4-DihydroxyBenzophenone, ESCALOL 567,2-hydroxy-4-n-octoxybenzophenone
Replace.Age resister substitute includes (1,2,2,6,6- pempidine base) phosphite ester, 4- benzoyloxys -2,2,6,6- tetramethyls
Any one or a few in phenylpiperidines.
S02, will supporting part 7 raw material mix after coated in obtaining the second film layer in the first film layer 6；Exposure is so that the second film
Layer forms the pattern with multiple supporting parts 7.
Specifically, after completing the first film layer 6, then be cleaned and dried by UV, coat the raw material of the supporting part 7 mixed.Control
Coating machine overhang processed, after the completion of coating, shading room temperature is placed 1 day, after 100 DEG C of preliminary drying 90s, has block plan by customization
The mask plate exposure of case.After the completion of exposure, top layer is equably rinsed using 0.05% potassium hydroxide solution, development is not exposed
Part, form multiple supporting parts 7 with subregion pattern；Then surface is cleaned with clear water, after drying, is heated to 200 DEG C, keeps
20min.Ensure the thickness (or height) of supporting part 7, i.e., the thickness of the second film layer is in 10~12um.
Wherein, it is sol system after the raw material mixing of supporting part 7, using preceding sealing lucifuge, is preserved at 0~5 DEG C, before coating
Rise again at 25 DEG C of room temperature.The mass fraction of each raw material of supporting part 7 is shown in Table 2 in embodiment 3-5：
The mass fraction of each raw material of the supporting part of table 2
Optional S03, pressing plate covered to heating base station body to eliminate the film layer 6 of supporting part 7 and first on supporting part 7
Deformation.
That is, to eliminate the internal stress of the polymeric material of the film layer 6 of supporting part 7 and first, covered on supporting part
Last layer white glass, base station is set by uniform pressure, to maintain the temperature at 90 DEG C, 10h everywhere.After the completion of remove white glass, this mistake
Journey can make the supporting part being made up of polymer film and the plastic deformation of the first film layer disappear, and ensure that base station is everywhere during actual use
Flatness.
Optional S04, then, is gone the first film layer on base station body 1 on the position of adsorption hole 8 using graver
Remove, after cleaned drying, obtain final exposure base station.Wherein, the supporting part 7 in Fig. 4 is only schematic diagram, is not limited herein
The concrete shape of supporting part 7, it is to be understood that when it is applied to expose large-sized glass substrate, as Fig. 5 is overlooked
Shown in figure, the pattern of supporting part 7 is the embossing pattern formed, available for base station subregion.
Wherein, embodiment 3-5 exposure base station is under the illumination of different wave length, the reflectivity of the first film layer 6 and support
The transmitance in portion 7 is shown in Table 3.
The embodiment 3-5 of table 3 exposure base station illumination test result
| Embodiment 3 | Embodiment 4 | Embodiment 5 | Embodiment 3 | Embodiment 4 | Embodiment 5 | |
| Wavelength/nm | 290 | 300 | 310 | 320 | 350 | 400 |
| First film layer reflectivity/% | 8 | 7 | 7 | 6 | 6 | 5 |
| Supporting part transmitance/% | 75 | 81 | 81 | 85 | 90 | 91 |
Obviously, also many modifications may be made to for the embodiment of the various embodiments described above；Such as：The specific quality of each raw material
Fraction can be adjusted as needed, and concrete technology can be changed as needed, so that the reflectivity of the first film layer is extremely
5%-40%.
Embodiment 6：
A kind of exposure machine is present embodiments provided, includes the exposure bench of above-described embodiment, wherein, first film layer is not
At least part opening position of supporting part is set to be provided with adsorption hole, for adsorbing glass substrate.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (17)
1. one kind exposure base station, it is characterised in that including：
Base station body；
The first film layer on the base station body；
Multiple supporting parts in first film layer, for contacting simultaneously supporting substrate with substrate；Wherein, first film layer
Formed with the supporting part by low reflectivity material；
The raw material of first film layer includes：Polyimide preformed polymer, epoxy resin, solvent, and UV absorbers；
The raw material of the supporting part includes：Polyimide preformed polymer, carbamate, and initiator.
2. exposure base station according to claim 1, it is characterised in that the reflectivity of the low reflectivity material is 5%-
40%.
3. exposure base station according to claim 1, it is characterised in that first film layer is made up of extinction resin material,
The supporting part is made up of transparent resin material.
4. exposure base station according to claim 3, it is characterised in that the first film layer absorptance is 75%-91%.
5. exposure base station according to claim 1, it is characterised in that the thickness of first film layer is 4-7 μm.
6. exposure base station according to claim 1, it is characterised in that described on the direction of first film layer
The size of supporting part is 10-12 μm.
7. exposure base station according to claim 1, it is characterised in that the molecular weight of the polyimide preformed polymer is 800-
1200, the epoxide number of the epoxy resin is 0.41-0.54eq/100g, the polyimide preformed polymer, epoxy resin, ultraviolet
Light absorber, the mass ratio of solvent are (13-18):(2-3)(0.5-1.5):(75-80).
8. exposure base station according to claim 7, it is characterised in that the raw material of first film layer also includes surface-active
Any one or a few in agent, age resister, anti-wear agent.
9. exposure base station according to claim 8, it is characterised in that the polyimide preformed polymer, surfactant, resist
Aging agent, the mass ratio of anti-wear agent are (13-18):(0.05-1):(0.04-0.05):(1-2).
10. exposure base station according to claim 8, it is characterised in that the viscosity of the raw material of first film layer is 2.1-
2.5mPa.s。
11. exposure base station according to claim 1, it is characterised in that the polyimide preformed polymer, carbamate,
And the mass ratio of initiator is (13-18):(2-3):(0.1-0.15).
A kind of 12. preparation method for exposing base station, it is characterised in that including：
Form the first film layer on base station body the step of；
Form multiple supporting parts in first film layer the step of；Wherein, first film layer and the supporting part are by low
Reflective materials are formed；
The raw material of first film layer includes：Polyimide preformed polymer, epoxy resin, solvent, and UV absorbers；
The raw material of the supporting part includes：Polyimide preformed polymer, carbamate, and initiator.
13. the preparation method of exposure base station according to claim 12, it is characterised in that formed on the base station body
The step of first film layer be by the raw material of first film layer on the base station body after be heating and curing to obtain described
One film layer.
14. the preparation method of exposure base station according to claim 12, it is characterised in that described in first film layer
The step of forming multiple supporting parts includes：
For the raw material for preparing the supporting part the second film layer will be obtained in first film layer；
Using photoetching process so that second film layer forms the pattern with multiple supporting parts.
15. the preparation method of exposure base station according to claim 12, it is characterised in that also include the supporting part and
The step of first film layer sizing.
16. the preparation method of exposure base station according to claim 15, it is characterised in that described by the supporting part and institute
The step of stating the sizing of the first film layer is to cover pressing plate to heating the base station body to eliminate the support on the supporting part
Portion and the deformation of first film layer.
A kind of 17. exposure machine, it is characterised in that including the exposure bench described in claim any one of 1-11, first film
The opening position that layer is not provided with the supporting part is provided with adsorption hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610465462.XA CN106125512B (en) | 2016-06-23 | 2016-06-23 | One kind exposure base station and preparation method thereof, exposure machine |
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| CN201610465462.XA CN106125512B (en) | 2016-06-23 | 2016-06-23 | One kind exposure base station and preparation method thereof, exposure machine |
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| CN106125512A CN106125512A (en) | 2016-11-16 |
| CN106125512B true CN106125512B (en) | 2018-01-19 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108415224A (en) * | 2018-03-22 | 2018-08-17 | 京东方科技集团股份有限公司 | Exposure system and exposure machine microscope carrier |
| CN113099625B (en) * | 2021-04-21 | 2022-03-11 | 深圳市祺利电子有限公司 | Solder mask exposure method for circuit board |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4057347A (en) * | 1975-03-26 | 1977-11-08 | Hitachi, Ltd. | Optical exposure apparatus |
| US6260282B1 (en) * | 1998-03-27 | 2001-07-17 | Nikon Corporation | Stage control with reduced synchronization error and settling time |
| CN101025571A (en) * | 2006-02-13 | 2007-08-29 | Asml荷兰有限公司 | Device manufacturing method and computer program product |
| CN102388336A (en) * | 2010-07-20 | 2012-03-21 | 株式会社爱发科 | Light irradiation device |
| CN105629681A (en) * | 2016-04-07 | 2016-06-01 | 京东方科技集团股份有限公司 | Bearing base station, exposure device and exposure method |
-
2016
- 2016-06-23 CN CN201610465462.XA patent/CN106125512B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4057347A (en) * | 1975-03-26 | 1977-11-08 | Hitachi, Ltd. | Optical exposure apparatus |
| US6260282B1 (en) * | 1998-03-27 | 2001-07-17 | Nikon Corporation | Stage control with reduced synchronization error and settling time |
| CN101025571A (en) * | 2006-02-13 | 2007-08-29 | Asml荷兰有限公司 | Device manufacturing method and computer program product |
| CN102388336A (en) * | 2010-07-20 | 2012-03-21 | 株式会社爱发科 | Light irradiation device |
| CN105629681A (en) * | 2016-04-07 | 2016-06-01 | 京东方科技集团股份有限公司 | Bearing base station, exposure device and exposure method |
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| CN106125512A (en) | 2016-11-16 |
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