CN106119812A - Plasma enhanced CVD chamber, equipment and control method thereof - Google Patents
Plasma enhanced CVD chamber, equipment and control method thereof Download PDFInfo
- Publication number
- CN106119812A CN106119812A CN201610494836.0A CN201610494836A CN106119812A CN 106119812 A CN106119812 A CN 106119812A CN 201610494836 A CN201610494836 A CN 201610494836A CN 106119812 A CN106119812 A CN 106119812A
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- chamber
- air inlet
- upper cover
- suction nozzle
- plasma enhanced
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The open a kind of plasma enhanced CVD chamber of the present invention, equipment and control method thereof, this Plasma Enhanced Chemical Vapor deposition apparatus, at least include radio-frequency power supply and plasma enhanced CVD chamber, wherein, plasma enhanced CVD chamber has upper cover, air inlet pipe, suction nozzle, air inlet, even air chamber, chamber shell and slide glass bottom electrode.Air inlet is positioned in upper cover and is connected with the even air chamber of lower section, and air inlet pipe is connected with air inlet by suction nozzle, and one end of radio-frequency power supply is connected with slide glass bottom electrode, other end ground connection, air inlet pipe, suction nozzle, upper cover and the equal ground connection of even air chamber.Invention not only avoids the generation of powder at air inlet, and can be flexibly applied to need to increase thin film and substrate adhesion and be not intended to the various different occasions such as generation lattice damage.
Description
Technical field
The present invention relates to microelectronic, be specifically related to a kind of plasma enhanced CVD chamber, equipment and
Control method.
Background technology
Plasma enhanced CVD (PECVD) equipment be the field devices such as quasiconductor, microelectronics, photoelectron and
Circuit prepares requisite machining tool.
It is known that depositing thin film when, various substrates material requires difference to the condition of deposit.At rustless steel etc.
The thick SiO of deposit on material2Or during SiN, it is desirable to adhesion property is especially good.Therefore, before deposition with high-octane Ar ion bom bardment
Surface, does primary ions and cleans, remove the contamination on surface, also activate substrate surface simultaneously, makes the thin film of deposit adhere to substrate
Obtain more firm.But on the materials such as quasiconductor Si or GaAs sheet, deposit SiO2Or during SiN, above-mentioned high-energy ion bombardment is to be impermissible for
, because it can cause substrate surface lattice damage, cause the transistor produced on this substrate slice subsequently to produce electric leakage.And
The size of above-mentioned bombardment effect is relevant to the automatic bias produced during plasma glow.Automatic bias is the highest, and bombardment effect is the strongest；
Vice versa.
It addition, conventional PECVD device structure is as it is shown in figure 1, include electricity under upper cover 11, air inlet 12, even air chamber 13, slide glass
Suction nozzle above pole 14, metal cavity wall 15, radio-frequency power supply 16, insulated enclosure circle 17, ceramic insulator 18 and ceramic insulator
19, metal air inlet pipe 20.Its upper electrode includes that upper cover 11 and even air chamber 13, even air chamber 13 are connected to radio-frequency power supply 16, radio frequency electrical
The other end ground connection in source 16.Because of metal air inlet pipe 20 and suction nozzle 19 and the equal ground connection of metal chamber walls 15, and even air chamber 13 connects
Radio frequency, therefore a rf electric field can be there is in the space between suction nozzle 19 and following even air chamber 13.When reacting gas passes through,
Under a certain suitable air pressure conditions, this space can produce aura, causes reacting gas to be activated and produce deposit.Due to this district
Territory temperature is the highest, and the film of deposit adheres to loosely on air inlet hole wall, and will fall down formation powder.Then, it is taken to air-flow
The surface of deposit wafer, makes crystal column surface sprinkle powder.After long-time deposit, the aperture of giving vent to anger of even air chamber shower nozzle even can be made to block up
Plug.Worse even near the most accidental air inlet space starter create powder, gas passage will be made to become
Obtain the dirtiest, be difficult to clean, the cleaning of many batch crystal column surfaces can be affected.
Summary of the invention
In order to solve the problems referred to above, the present invention provides a kind of plasma enhanced CVD chamber, have upper cover,
Air inlet pipe, suction nozzle, air inlet, even air chamber, chamber shell and slide glass bottom electrode, wherein, air inlet be positioned in upper cover and with under
The even air chamber of side is connected, and air inlet pipe is connected with air inlet by suction nozzle, and described suction nozzle directly connects with described air inlet
Touch connection.
Being preferably, described upper cover directly contacts with described chamber shell.
The present invention also provides for a kind of plasma-reinforced chemical vapor deposition equipment, at least includes radio-frequency power supply and chamber, its
Described in chamber there is upper cover, air inlet pipe, suction nozzle, air inlet, even air chamber, chamber shell and slide glass bottom electrode, wherein, air inlet
Mouth is positioned in upper cover and is connected with the even air chamber of lower section, and air inlet pipe is connected with air inlet by suction nozzle, described radio frequency electrical
The one end in source is connected with described slide glass bottom electrode, other end ground connection, described air inlet pipe, described suction nozzle, described upper cover and institute
State the equal ground connection of even air chamber.
Being preferably, also include inducer, its one end is connected with described slide glass bottom electrode, other end ground connection.
It is preferably, also includes switch, connect with described inducer.
Being preferably, the inductance value of described inducer is 10～50 μ H.
Being preferably, when being deposited, described switch is conducting state.
Being preferably, when carrying out ion bom bardment, described switch is off-state.
The present invention also provides for a kind of plasma enhanced CVD apparatus control method, the plasma used
Strengthen chemical vapor deposition device and include chamber, radio-frequency power supply, inducer and switch, comprise the following steps: in making described chamber
Vacuum reaches predetermined value；Connect described radio-frequency power supply；And depositing step, in described chamber, it is passed through reacting gas, conducting
Described switch, is deposited.
It is preferably, before described depositing step, also includes ion bom bardment step, logical argon in described chamber, disconnect described
Switch, carries out ion bom bardment.
Invention not only avoids the generation of powder at air inlet, and can be flexibly applied to need to increase thin film and substrate
Adhesiveness and be not intended to produce the various different occasions such as lattice damage.
Accompanying drawing explanation
Fig. 1 is the structural representation of conventional PECVD device.
Fig. 2 is the structural representation of PECVD chamber.
Fig. 3 is another structural representation of PECVD chamber.
Fig. 4 is the structural representation of the embodiment one of PECVD device.
Fig. 5 is the structural representation of the embodiment two of PECVD device.
Fig. 6 is the structural representation of the embodiment three of PECVD device.
Fig. 7 is the flow chart of PECVD device control method.
Fig. 8 is another flow chart of PECVD device control method.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it will be appreciated that described herein
Specific embodiment only in order to explain the present invention, is not intended to limit the present invention.Described embodiment is only the present invention one
Divide embodiment rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The all other embodiments obtained under creative work premise, broadly fall into the scope of protection of the invention.
PECVD chamber
Fig. 2 is the structural representation of PECVD chamber.PECVD chamber has upper cover 21, air inlet pipe 22, suction nozzle 23, air inlet
Mouthfuls 24, even air chamber 25, chamber shell 26 and slide glass bottom electrode 27, wherein, air inlet 24 is positioned in upper cover 21 and even with lower section
Air chamber 25 is connected, and air inlet pipe is connected with air inlet 24 by suction nozzle 23, and wherein, suction nozzle 23 directly connects with air inlet 24
Touch connection, i.e. need not between suction nozzle 23 and air inlet 24, arrange insulator such as pottery etc..
Fig. 3 is another structural representation of PECVD chamber.PECVD chamber have upper cover 21, air inlet pipe 22, suction nozzle 23,
Air inlet 24, even air chamber 25, chamber shell 26 and slide glass bottom electrode 27, wherein, air inlet 24 be positioned in upper cover 21 and with lower section
Even air chamber 25 be connected, air inlet pipe is connected with air inlet 24 by suction nozzle 23, and wherein, upper cover 21 is straight with chamber shell 26
Contact, forms airtight chamber.That is, need not arrange insulator between upper cover 21 and chamber shell 26, such as pottery etc..
PECVD device
Embodiment one
Figure 4 illustrates a kind of plasma-reinforced chemical vapor deposition equipment.Plasma-reinforced chemical vapor deposition sets
For including: radio-frequency power supply 1 and plasma enhanced CVD chamber 2, PECVD chamber 2 has upper cover 21, air inlet pipe
22, suction nozzle 23, air inlet 24, even air chamber 25, chamber shell 26 and slide glass bottom electrode 27, wherein, air inlet 24 is positioned at upper cover
Being connected in 21 and with the even air chamber 25 of lower section, air inlet pipe is connected with air inlet 24 by suction nozzle 23, wherein, and suction nozzle 23
Directly contact connection with air inlet 24, upper cover 21 directly contacts with chamber shell 26, forms airtight chamber.The one of radio-frequency power supply 1
End is connected with slide glass bottom electrode 27, other end ground connection, air inlet pipe 22, suction nozzle 23, upper cover 21 and the equal ground connection of even air chamber 25.
Radio-frequency power supply 1 reconfiguration is to slide glass bottom electrode 27, and even air chamber 25 and air inlet pipe 22, suction nozzle 23, upper cover 21, enters
QI KOU 24 and the equal ground connection of even air chamber 25.So, intake channel does not exist potential difference, do not exist in conventional PECVD device
Electric field between valve 19 and following even air chamber 13, therefore on the path of reacting gas, will not occur because above-mentioned reason produces
Powder.This design will produce higher automatic bias on slide glass bottom electrode, thus causes the bombardment of ion pair substrate.I
Can utilize this characteristic, before formal deposit thin film, be passed through Ar ion aura bombardment substrate surface, the most again deposit thin
Film, can make thin film and substrate adhere to more firm.
Embodiment two
Figure 5 illustrates another kind of plasma-reinforced chemical vapor deposition equipment.This Plasma Enhanced Chemical Vapor forms sediment
Long-pending equipment includes: radio-frequency power supply 1 and plasma enhanced CVD chamber 2 and inducer 3, on PECVD chamber has
Lid 21, air inlet pipe 22, suction nozzle 23, air inlet 24, even air chamber 25, chamber shell 26 and slide glass bottom electrode 27, wherein, air inlet
24 are positioned in upper cover 21 and are connected with the even air chamber 25 of lower section, and air inlet pipe is connected with air inlet 24 by suction nozzle 23, its
In, suction nozzle 23 directly contacts connection with air inlet 24, and upper cover 21 directly contacts with chamber shell 26, forms airtight chamber.Penetrate
One end of frequency power 1 is connected with slide glass bottom electrode 27, other end ground connection, air inlet pipe 22, suction nozzle 23, upper cover 21 and even air chamber
25 equal ground connection.Inducer 3 one end is connected with slide glass electrode 27, other end ground connection.Wherein, the inductance value of inducer 3 is preferably
10～50 μ H, the most preferably 20 μ H.
The inducer 3 bridging inductance value bigger between slide glass bottom electrode 27 and ground can be made automatic bias owing to using by this structure
Direct-current short circuit over the ground, i.e. automatic bias go to zero.Thus eliminate above-mentioned ion bombardment effects, thus do not cause lattice damage.
Embodiment three
Another kind of plasma-reinforced chemical vapor deposition equipment is shown at Fig. 6.This plasma-reinforced chemical vapor deposition
Equipment includes: radio-frequency power supply 1 and plasma enhanced CVD chamber 2, inducer 3 and switch 4, PECVD chamber has
There are upper cover 21, air inlet pipe 22, suction nozzle 23, air inlet 24, even air chamber 25, chamber shell 26 and slide glass bottom electrode 27, wherein, enter
QI KOU 24 is positioned in upper cover 21 and is connected with the even air chamber 25 of lower section, and air inlet pipe is connected with air inlet 24 by suction nozzle 23
Logical, wherein, suction nozzle 23 directly contacts connection with air inlet 24, and upper cover 21 directly contacts with chamber shell 26, forms closed chamber
Room.One end of radio-frequency power supply 1 is connected with slide glass bottom electrode 27, other end ground connection, air inlet pipe 22, suction nozzle 23, upper cover 21, enters
QI KOU 24 and the equal ground connection of even air chamber 25.Inducer 3 one end is connected with slide glass electrode 27, other end ground connection.Switch 4 and inducer
3 series connection.
Owing in a structure of the in-vention, this inductor loops being in series with a switch 4, when switching 4 conducting, inducer
3 are connected with slide glass bottom electrode 27, can be deposited, such as the deposit to semiconductor chip；When switching 4 disconnection,
Ion bom bardment can be carried out, such as, when making some sensor, need to deposit SiO at stainless steel surfaces2Situation with SiN.
It is a kind of effective ways improving film adherability energy with Ar ion bom bardment.Therefore, user can arrange switch according to real needs
The conducting of 4 and off-state, have the scope that is more widely applied.
It should be noted that above-described embodiment is only the exemplary statement of preferred version, the present invention is not limited to this, such as
Plasma-reinforced chemical vapor deposition chamber structure still uses conventional structure, namely arranges between suction nozzle 23 and air inlet 24
Insulator, and/or insulator is set between upper cover 21 and chamber shell 26, as long as making under one end and the slide glass of radio-frequency power supply 1
Electrode 27 is connected, other end ground connection, and air inlet pipe 22, suction nozzle 23, upper cover 21, air inlet 24 and the equal ground connection of even air chamber 25 are i.e.
Can.
Slide glass bottom electrode is connect radio frequency by the present invention, it is preferable that bigger by bridging an inductance value between slide glass bottom electrode and ground
Inducer, it is further preferable that tandem tap in inductor loops, this PECVD device not only avoid powder at air inlet
Produce, and can be flexibly applied to need to increase thin film and substrate adhesion and to be not intended to generation lattice damage etc. various different
Occasion, be a kind of preferably structure design.
PECVD device control method
According to a further aspect in the invention, a kind of PECVD device control method is also provided for, as it is shown in fig. 7, comprises walk below
Suddenly, specific as follows:
Step S11, in making chamber 2, vacuum reaches predetermined value；
Step S12, connects described radio-frequency power supply 1；
Step S13, is passed through reacting gas in chamber 2, turns on switch 4, is deposited wafer.
In the case of needs increase thin film and substrate adhesion, as shown in Figure 8, also include before depositing step S13 from
Sub-implant steps, specific as follows:
Step S14, is passed through Ar gas in chamber 2, disconnects switch 4, wafer is carried out ion bom bardment.
Below the step only relating to technical scheme is illustrated, its in PECVD device control method
He does not repeats them here by the rate-determining steps of routine.Different demands when using various substrates deposit can be met according to the present invention,
Expanded further equipment range of application.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art in the technical scope that the invention discloses, the change that can readily occur in or replacement, all answer
Contain within protection scope of the present invention.
Claims (10)
1. a plasma enhanced CVD chamber, have upper cover, air inlet pipe, suction nozzle, air inlet, even air chamber,
Chamber shell and slide glass bottom electrode, wherein, air inlet is positioned in upper cover and is connected with the even air chamber of lower section, air inlet pipe pass through into
Valve is connected with air inlet, it is characterised in that
Described suction nozzle directly contacts connection with described air inlet.
Plasma enhanced CVD chamber the most according to claim 1, it is characterised in that
Described upper cover directly contacts with described chamber shell.
3. a plasma-reinforced chemical vapor deposition equipment, at least includes that radio-frequency power supply and chamber, wherein said chamber have
Upper cover, air inlet pipe, suction nozzle, air inlet, even air chamber, chamber shell and slide glass bottom electrode, wherein, air inlet is positioned in upper cover also
Being connected with the even air chamber of lower section, air inlet pipe is connected with air inlet by suction nozzle and it is characterized in that,
One end of described radio-frequency power supply is connected with described slide glass bottom electrode, other end ground connection, described air inlet pipe, described air inlet
Mouth, described upper cover and the described equal ground connection of even air chamber.
Plasma-reinforced chemical vapor deposition equipment the most according to claim 3, it is characterised in that also include inducer,
Its one end is connected with described slide glass bottom electrode, other end ground connection.
Plasma-reinforced chemical vapor deposition equipment the most according to claim 4, it is characterised in that also include switch, with
Described inducer is connected.
Plasma-reinforced chemical vapor deposition equipment the most according to claim 5, it is characterised in that the electricity of described inducer
Inductance value is 10～50 μ H.
Plasma-reinforced chemical vapor deposition equipment the most according to claim 5, it is characterised in that when being deposited,
Described switch is conducting state.
Plasma enhanced CVD equipment the most according to claim 5, it is characterised in that
When carrying out ion bom bardment, described switch is off-state.
9. a plasma enhanced CVD apparatus control method, the PECVD used forms sediment
Long-pending equipment includes chamber, radio-frequency power supply, inducer and switch, it is characterised in that comprise the following steps:
In making described chamber, vacuum reaches predetermined value；
Connect described radio-frequency power supply；And
Depositing step, is passed through reacting gas in described chamber, turns on described switch, is deposited.
Plasma enhanced CVD apparatus control method the most according to claim 9, it is characterised in that
Also include ion bom bardment step before described depositing step, in described chamber, be passed through argon, disconnect described switch, carry out ion and bang
Hit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610494836.0A CN106119812B (en) | 2016-06-29 | 2016-06-29 | Plasma enhanced CVD chamber, equipment and its control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610494836.0A CN106119812B (en) | 2016-06-29 | 2016-06-29 | Plasma enhanced CVD chamber, equipment and its control method |
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| Publication Number | Publication Date |
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| CN106119812A true CN106119812A (en) | 2016-11-16 |
| CN106119812B CN106119812B (en) | 2018-09-11 |
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| CN201610494836.0A Active CN106119812B (en) | 2016-06-29 | 2016-06-29 | Plasma enhanced CVD chamber, equipment and its control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171364A (en) * | 2021-12-03 | 2022-03-11 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61256640A (en) * | 1985-05-09 | 1986-11-14 | Matsushita Electric Ind Co Ltd | Plasma chemical vapor deposition apparatus |
| CN101064238A (en) * | 2006-04-24 | 2007-10-31 | 应用材料股份有限公司 | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
| CN102534568A (en) * | 2010-12-30 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma-enhanced chemical vapor deposition equipment |
-
2016
- 2016-06-29 CN CN201610494836.0A patent/CN106119812B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61256640A (en) * | 1985-05-09 | 1986-11-14 | Matsushita Electric Ind Co Ltd | Plasma chemical vapor deposition apparatus |
| CN101064238A (en) * | 2006-04-24 | 2007-10-31 | 应用材料股份有限公司 | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
| CN102534568A (en) * | 2010-12-30 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma-enhanced chemical vapor deposition equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114171364A (en) * | 2021-12-03 | 2022-03-11 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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| CN106119812B (en) | 2018-09-11 |
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Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No. 8 Liaohe West Road, Pizhou Economic Development Zone, Pizhou, Xuzhou, Jiangsu Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |
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