CN106102309A - The method that plastic circuit is prepared in Galvanic reaction is carried out with silicon powder - Google Patents
The method that plastic circuit is prepared in Galvanic reaction is carried out with silicon powder Download PDFInfo
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- CN106102309A CN106102309A CN201610547824.XA CN201610547824A CN106102309A CN 106102309 A CN106102309 A CN 106102309A CN 201610547824 A CN201610547824 A CN 201610547824A CN 106102309 A CN106102309 A CN 106102309A
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- silicon powder
- silicon
- plastic
- ion
- solution
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- 239000004033 plastic Substances 0.000 title claims abstract description 127
- 229920003023 plastic Polymers 0.000 title claims abstract description 127
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 239000011863 silicon-based powder Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 230000004913 activation Effects 0.000 claims abstract description 35
- 239000000843 powder Substances 0.000 claims abstract description 34
- 238000007747 plating Methods 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims abstract description 33
- 238000006073 displacement reaction Methods 0.000 claims abstract description 30
- 239000002131 composite material Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000945 filler Substances 0.000 claims abstract description 8
- 239000002991 molded plastic Substances 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 21
- 239000008187 granular material Substances 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 10
- 229910001431 copper ion Inorganic materials 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 229910021645 metal ion Inorganic materials 0.000 claims description 9
- -1 gold ion Chemical class 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000007688 edging Methods 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 5
- 229910001453 nickel ion Inorganic materials 0.000 claims description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 4
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 4
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(ii) nitrate Chemical compound [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- SJUCACGNNJFHLB-UHFFFAOYSA-N O=C1N[ClH](=O)NC2=C1NC(=O)N2 Chemical compound O=C1N[ClH](=O)NC2=C1NC(=O)N2 SJUCACGNNJFHLB-UHFFFAOYSA-N 0.000 claims description 3
- 229910021608 Silver(I) fluoride Inorganic materials 0.000 claims description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 235000013312 flour Nutrition 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 5
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000007772 electroless plating Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 34
- 238000002360 preparation method Methods 0.000 description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 24
- 239000013522 chelant Substances 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000004594 Masterbatch (MB) Substances 0.000 description 13
- 230000009467 reduction Effects 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000004417 polycarbonate Substances 0.000 description 10
- 230000035484 reaction time Effects 0.000 description 9
- 229910003638 H2SiF6 Inorganic materials 0.000 description 8
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 8
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000011869 silicon-nickel composite material Substances 0.000 description 2
- 229920002972 Acrylic fiber Polymers 0.000 description 1
- 102000008186 Collagen Human genes 0.000 description 1
- 108010035532 Collagen Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920001617 Vinyon Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229920001436 collagen Polymers 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229930002839 ionone Natural products 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0284—Details of three-dimensional rigid printed circuit boards
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
- C23C18/204—Radiation, e.g. UV, laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
- C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
- C23C18/206—Use of metal other than noble metals and tin, e.g. activation, sensitisation with metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0716—Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Chemically Coating (AREA)
Abstract
Carry out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction, comprise the following steps: silicon powder is joined in high molecule plastic parent as filler by (1), injection-molded plastic workpiece；(2) plastics part of step (1) is carried out laser graphics process；(3) Galvanic displacement reaction will be carried out, i.e. prepares metallic silicon composite powder in the described plastics part after step (2) processes immerses chemical solution；(4) plastics part after step (3) being processed carries out chemical plating process, using described metallic silicon composite powder as the activation point of chemical plating, completes the chemical plating surface metal circuit of plastic circuit.The present invention be utilize silicon powder as high molecular filler, and silicon displacement reaction characteristic own, form metallic silicon composite powder, this powder becomes the activation point in plastic circuit electroless plating step；Therefore the Metal Substrate amount of filler used by plastic circuit reduces, and chemical plating is easier, and reduces cost.
Description
Technical field
The present invention relates to a kind of method preparing plastic circuit, especially relate to one silicon powder and carry out Galvanic displacement
The method of reaction preparation plastic circuit.
Background technology
Plastic circuit (plastic three-dimensional circuit), refers to by the injection-molded plastic surface of shell application side of process accordingly
Method, produces required three-dimensional conductive pattern, then by the encapsulation of device, the electric interconnection of circuit common, support and
The functions such as the protection of plastic casing combine on a device, form stereo circuit carrier, the most referred to as metallization of plastic surface.
Three-dimensional circuit technology occurs in the eighties in 20th century the earliest, until at supporting laser processing technology and laser plastic
After collagen material is developed by Germany Enterprises and university, just it is rapidly progressed, because its degree of freedom designed is big, can realize
Function is many, can reduce installation level and the quantity of assembling.It is applied in fields such as automobile, electronic device, communications at present,
Plastic circuit is to use laser direct forming (LDS) technology, and manufacture process is greatly simple, the market demand just with average annual 20% speed
Degree increases.
Laser direct forming (LDS) technology mainly has four steps: 1. material prepares: prepare the active substance Han Metal Substrate,
Mainly there are the modified plastic agglomerates such as metal-organic chelate, and metal-oxide；2. injection mo(u)lding: use modified plastic agglomerate
For raw material, raw material injection molding is become given shape；The most radium-shine activation: laser-irradiated domain forms specific pattern and rough surface
Changing, the Metal Substrate active substance in plastics is transformed into metal core and takes root on frosting；4. chemical plating: with the gold of frosting
Belong to core and carry out chemical plating for activation point, be plated to the circuit of 5-8 micron, such as copper, nickel etc., make plastics part become one and possess conduction
The MID(mobile internet device of circuit) element.
Owing to the course of processing of plastic three-dimensional circuit is complicated, involves a wide range of knowledge, wherein involve plastics macromolecule, nanometer material
Multiple fields such as material, Laser Processing, electrical design, and chemical plating, and, the cost of material that existing chemical plating uses is suitable
Height, therefore, manufacture difficulty is big, and manufacturing cost is high.
The key point of laser direct forming (LDS) technique is special chemical material (the Metal Substrate active matter in plastic raw materials
Matter), laser irradiates can not only be graphical, also triggers this material physicochemical change simultaneously, forms elemental metals core, as chemistry
The catalytic activation point of plating.Metal Substrate active substance is mainly metal-organic chelate, it is however generally that, this metal-organic
The price of chelate is expensive more than plastic substrate, and this metal-organic chelate adds on a small quantity only as additive, and
It must also bear the high-temperature during follow-up injection molding, therefore higher to its chemical stability requirements；But, one
For as, but this metal-organic chelate stability at elevated temperature is poor, affects quality and the qualification rate of product, from
And raised manufacturing cost further.
Summary of the invention
The technical problem to be solved is, overcomes the drawbacks described above that prior art exists, it is provided that a kind of cost is relatively
Low carries out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction.
The technical solution adopted for the present invention to solve the technical problems is: one silicon powder carries out Galvanic reaction to be prepared
The method of plastic circuit, comprises the following steps:
(1) silicon powder is joined in high molecule plastic parent as filler, injection-molded plastic workpiece；
(2) step (1) gained plastics part is carried out laser graphics process, exposed part by the frosting of laser ablation
Silicon powder granule；
(3) gal will be carried out and cuts down in the solution that the described plastics part after step (2) processes immerses fluoride ion and metal ion
Buddhist nun's displacement reaction, the metal particles deposition cemented out is on the surface of silicon powder granule；I.e. prepare and be embedded in described plastics work
The metal-silicon composite powder on part surface；
This metal-silicon composite powder being embedded in plastic workpiece surface is exactly the activation point that plastic circuit carries out chemical plating；
Described Galvanic displacement reaction refers to, described silicon powder surface is replaced by metal ion, forms metal film and is coated on silicon
The particle on micropowder surface；Described exposed silicon powder granule, as the reducing agent of Galvanic displacement reaction, is also carrier, restores
The metallic particles come is gradually deposited at the surface of silicon powder；
(4) will through step (3) process after gained plastics part carry out chemical plating process, using described metal-silicon composite powder as
The activation point of chemical plating, completes the chemical plating metal circuit of plastic circuit.
Further, in step (1), described silicon powder is band saw, edging, throwing in photovoltaic crystal silicon or the semiconductor silicon course of processing
The scrap silicon produced in light, multi-wire saw machining process, or superfine metal silica flour；Described scrap silicon or superfine metal silicon
The particle diameter preferred 0.5-5 micron of powder.
Further, in step (1), it is 1%～50% that described silicon powder accounts for the mass percent in described plastics parent；Preferably
2～40%；More preferably 3～30%；Further preferred 4～20%；The most preferably 5～10%.
Further, in step (3), the time >=0.4min of described Galvanic reaction, preferably 0.5～5min；More preferably 0.6
～4min；Further preferred 1～2min.
Further, in step (3), described metal ion is in copper ion, nickel ion, palladium ion, gold ion and silver ion
One.
Further, in step (3), the solution of described copper ion is copper chloride solution, copper nitrate solution or copper-bath
In one；The solution of described nickel ion is nickel nitrate solution；The solution of described palladium ion be palladium nitrate solution or Palladous chloride. molten
Liquid；The solution of described gold ion is chlorauric acid solution or chloroaurate solution；The solution of described silver ion be silver nitrate solution or
Argentous fluoride solution.
Further, in step (3), the concentration of described metal ion is 0.001-10mol/L, preferred concentration be 0. 1～
5mol/L；More preferably 0. 2～4mol/L；Further preferred 0.4～3 mol/L；The most preferably 0.5～2 mol/L.
Further, in step (3), the concentration of described fluorion is 0.1-5mol/L；Preferably 0. 2～4mol/L；Further
Preferably 0.4～3 mol/L；The most preferably 0.5～2 mol/L.
Compared with prior art, the invention have the advantages that
(1) present invention utilizes silicon powder to do plastic filler, and silicon powder can be with the broken silicon bits that the cutting of photovoltaic industry silicon chip is reclaimed
Raw material, has low cost, the advantage reducing environmental pollution；
(2) plastics part of containing silicon micro powder is after laser graphics, based on exposed silicon powder, and Galvanic displacement reaction shape
The metal-silicon composite powder become continues chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to integrated；It produces
Cost is far below the cost of metal-organic chelate laser activation used in plastic circuit in prior art.
Accompanying drawing explanation
Fig. 1 is the process chart of the embodiment of the present invention 1；
Fig. 2 is prior art laser direct forming (LDS) process chart；
Fig. 3 is the optical microscope photograph of the embodiment of the present invention 1 copper circuit pattern local area distribution.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the invention will be further described.
Embodiment 1
The present embodiment is used the method that silicon powder carries out Galvanic reaction preparation plastic circuit, comprises the following steps:
(1) it is to join macromolecule PP plastics (poly-third as filler after 1 μm silicon powder silane coupler is modified using particle diameter
Olefin(e) acid plastics) in raw material uniformly after mixing, twin screw uniformly extrudes as master batch, injection-molded plastic workpiece, described silicon powder
Accounting for the mass percent in described plastic master batch is 50%；
(2) the described plastics part of step (1) is carried out laser graphics process, exposed portion by the frosting of laser ablation
Divide silicon powder granule；
(3) preparing the hydrofluoric acid solution of 5mol/L concentration, be subsequently adding copper chloride, copper ion concentration is 2mol/L, mix homogeneously
Become fluoride ion and the solution of copper ion；To enter in the described plastics part after step (2) processes immerses described acid solution
Row Galvanic displacement reaction, the response time is 5min, and the metallic copper particle cemented out is deposited on the surface of silicon powder granule；I.e.
Prepare the copper-silicon composite powder being embedded in described plastic workpiece surface；Galvanic displacement reaction formula is as follows:
2Cu2++Si+6HF→2Cu↓+ H2SiF6+4H+；
(4) the described plastics part after step (3) being processed carries out chemical plating process, using described copper-silicon composite powder as change
Learn the activation point of plating, complete the chemical plating metal circuit of plastic circuit.
The copper circuit morphological regions on the present embodiment plastic circuit surface is distributed as shown in Figure 3.
Described silicon powder is to produce in band saw in the photovoltaic crystal silicon course of processing, edging, polishing, multi-wire saw machining process
Scrap silicon.
The technological process (as shown in Figure 1) of the present embodiment and prior art laser direct forming (LDS) process chart (figure
2) it is contrasted.
Application: the shape of above-mentioned plastic circuit is the antenna pattern of smart mobile phone, and the circuit structure of design meets hands
The requirement of the electric aspect of machine antenna, therefore this plastic three-dimensional circuit can use as the antenna of smart mobile phone.
The present embodiment utilizes silicon powder to do plastic filler, and the broken silicon that silicon powder reclaims with the cutting of photovoltaic industry silicon chip is considered to be worth doing as former
Material, has low cost, decreases the environmental pollution of silicon powder；The present embodiment copper-silicon composite powder proceeds as activation point
Chemical plating, preparation technology is simple, processing ease, it is easy to integrated；Its production cost is far below institute in plastic circuit in prior art
The cost of copper-organic chelate laser activation, cost reduces about 30%.
Embodiment 2
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 0.5 μm, and described silicon powder is
The scrap silicon produced in band saw, edging, polishing, multi-wire saw machining process in the semiconductor silicon course of processing；Plastics are that PC moulds
Material (polycarbonate plastic), it is 1% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation in step (3)
The hydrofluoric acid solution of 3mol/L concentration, is subsequently adding copper nitrate, and copper ion concentration is 10mol/L, carries out Galvanic displacement reaction
Time is 0.5min；
The present embodiment copper-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of copper-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 30%.
Remaining is with embodiment 1.
Embodiment 3
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 5 μm, and described silicon powder is gold
Belong to silicon powder particle；Plastics are PC plastics (polycarbonate plastics), and described silicon powder accounts for the mass percent in described plastic master batch
It is 30%；In step (3), the hydrofluoric acid solution of preparation 1mol/L concentration, is subsequently adding copper sulfate, and copper ion concentration is 0.1mol/
L, carrying out the Galvanic displacement reaction time is 4min；
The present embodiment copper-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of copper-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 30%.
Remaining is with embodiment 1.
Embodiment 4
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 1.5 μm, and described silicon powder is
Silicon metal powder granule；Plastics are PP plastics (polyacrylic plastics), and described silicon powder accounts for the quality hundred in described plastic master batch
Proportion by subtraction is 10%；In step (3), the hydrofluoric acid solution of preparation 2mol/L concentration, is subsequently adding nickel nitrate, and nickel ion concentration is
5mol/L, carrying out the Galvanic displacement reaction time is 0.5min；The metallic nickel granule cemented out is deposited on silicon powder granule
Surface；I.e. prepare the nickel-silicon composite powder being embedded in described plastic workpiece surface；Galvanic displacement reaction formula is as follows:
2Ni2++Si+6HF→2 Ni↓+ H2SiF6+4H+；
The present embodiment nickel-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of nickel-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 15%.
Remaining is with embodiment 1.
Embodiment 5
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 2 μm；Plastics are that PC plastics are (poly-
Carbonic ester plastics), it is 40% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation 0.5mol/L in step (3)
The hydrofluoric acid solution of concentration, is subsequently adding Palladous nitrate., and palladium ion concentration is 0.001mol/L, carries out the Galvanic displacement reaction time
For 5min；The Metal Palladium granule cemented out is deposited on the surface of silicon powder granule；I.e. prepare and be embedded in described plastics part
The palladium on surface-silicon composite powder；Galvanic displacement reaction formula is as follows:
2Pd3++Si+8HF→2 Pd↓ + H2SiF6+6H+；
The present embodiment palladium-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of palladium-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 50%.
Remaining is with embodiment 1.
Embodiment 6
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 3 μm；Plastics are that PC plastics are (poly-
Carbonic ester plastics), it is 20% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation 2.5mol/L in step (3)
The hydrofluoric acid solution of concentration, is subsequently adding Palladous chloride., and palladium ion concentration is 0.2mol/L, carries out the Galvanic displacement reaction time and is
4min；The Metal Palladium granule cemented out is deposited on the surface of silicon powder granule；I.e. prepare and be embedded in described plastics part table
The palladium in face-silicon composite powder；Galvanic displacement reaction formula is as follows:
2Pd3++Si+8HF→2 Pd↓ + H2SiF6+6H+；
The present embodiment palladium-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of palladium-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 50%.
Remaining is with embodiment 1.
Embodiment 7
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 4 μm；Plastics are that PE plastics are (poly-
Vinyl plastics), it is 5% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation 4mol/L concentration in step (3)
Hydrofluoric acid solution, be subsequently adding chlorauric acid solution, gold ion concentration is 0.001mol/L, carries out the Galvanic displacement reaction time
For 2min；The gold grain cemented out is deposited on the surface of silicon powder granule；I.e. prepare and be embedded in described plastic workpiece surface
Gold-silicon composite powder；Galvanic displacement reaction formula is as follows:
2Au3++Si+8HF→2 Au↓ + H2SiF6+6H+；
The present embodiment gold-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of gold-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 55%.
Remaining is with embodiment 1.
Embodiment 8
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 5 μm；Plastics are that PC plastics are (poly-
Carbonic ester plastics), it is 4% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation 0.2mol/L in step (3)
The hydrofluoric acid solution of concentration, is subsequently adding chloroaurate solution, and gold ion concentration is 0.01mol/L, carries out Galvanic displacement anti-
It is 2.5min between Ying Shi；The gold grain cemented out is deposited on the surface of silicon powder granule；I.e. prepare and be embedded in described plastics
The gold of surface of the work-silicon composite powder；Galvanic displacement reaction formula is as follows:
2Au3++Si+8HF→2 Au↓ + H2SiF6+6H+；
The present embodiment gold-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of gold-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 65%.
Remaining is with embodiment 1.
Embodiment 9
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 2 μm；Plastics are that PC plastics are (poly-
Carbonic ester plastics), it is 3% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation 0.4mol/L in step (3)
The hydrofluoric acid solution of concentration, is subsequently adding silver nitrate solution, and concentration of silver ions is 0.4mol/L, when carrying out Galvanic displacement reaction
Between be 1min；The metallic silver particles cemented out is deposited on the surface of silicon powder granule；I.e. prepare and be embedded in described plastics work
The silver on part surface-silicon composite powder；Galvanic displacement reaction formula is as follows:
4Ag++Si+6HF→4Ag↓+ H2SiF6+4H+；
The present embodiment silver-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of silver-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 50%.
Remaining is with embodiment 1.
Embodiment 10
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 3 μm；Plastics are that PP plastics are (poly-
Acrylic plastic), it is 2% that described silicon powder accounts for the mass percent in described plastic master batch；In step (3), preparation 0.1mol/L is dense
The hydrofluoric acid solution of degree, is subsequently adding Argentous fluoride solution, and concentration of silver ions is 0.5mol/L, carries out the Galvanic displacement reaction time
For 3min；The metallic silver particles cemented out is deposited on the surface of silicon powder granule；I.e. prepare and be embedded in described plastics part
The silver on surface-silicon composite powder；Galvanic displacement reaction formula is as follows:
4Ag++Si+6HF→4Ag↓+ H2SiF6+4H+；
The present embodiment silver-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of silver-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 50%.
Remaining is with embodiment 1.
Embodiment 11
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 3.5 μm, and described silicon powder is
The scrap silicon produced in band saw, edging, polishing, multi-wire saw machining process in the semiconductor silicon course of processing；Plastics are that PE moulds
Material (vinyon), it is 25% that described silicon powder accounts for the mass percent in described plastic master batch；Preparation in step (3)
The hydrofluoric acid solution of 4.5mol/L concentration, is subsequently adding copper nitrate, and copper ion concentration is 4mol/L, carries out Galvanic displacement reaction
Time is 2min；
The present embodiment copper-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of copper-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 30%.
Remaining is with embodiment 1.
Embodiment 12
The present embodiment differs only in embodiment 1: in step (1), and the particle diameter of silicon powder is 5 μm, and described silicon powder is gold
Belong to silicon powder particle；Plastics are PC plastics (polycarbonate plastics), and described silicon powder accounts for the mass percent in described plastic master batch
It is 12%；In step (3), the hydrofluoric acid solution of preparation 1.5mol/L concentration, is subsequently adding copper sulfate, and copper ion concentration is 3mol/
L, carrying out the Galvanic displacement reaction time is 2min；
The present embodiment copper-silicon composite powder proceeds chemical plating as activation point, and preparation technology is simple, processing ease, it is easy to
Integrated；Its production cost, far below the cost of copper-organic chelate laser activation used in plastic circuit in prior art, becomes
This reduction about 30%.
Remaining is with embodiment 1.
The above, be only presently preferred embodiments of the present invention, not impose any restrictions the present invention, every according to the present invention
Any amendment, change and the equivalent structure transformation that above example is made by technical spirit, the most still belongs to technical solution of the present invention
Protection domain.
Claims (10)
1. one kind carries out the method that plastic circuit is prepared in Galvanic reaction with silicon powder, it is characterised in that comprise the following steps:
(1) silicon powder is joined in high molecule plastic parent as filler, injection-molded plastic workpiece；
(2) the described plastics part of step (1) is carried out laser graphics process, exposed portion by the frosting of laser ablation
Divide silicon powder granule；
(3) will carry out in the solution that the described plastics part after step (2) processes immerses fluoride ion and plating metal ion
Galvanic displacement reaction, the metal particles deposition cemented out is on the surface of silicon powder granule；I.e. prepare and mould described in being embedded in
The metal-silicon composite powder of material surface of the work；
(4) by step (3) process after described plastics part carry out chemical plating process, using described metal-silicon composite powder as
The activation point of chemical plating, completes the chemical plating metal circuit of plastic circuit.
Silicon powder the most as claimed in claim 1 carries out the method that plastic circuit is prepared in Galvanic reaction, it is characterised in that step
Suddenly, in (1), described silicon powder is band saw in photovoltaic crystal silicon or the semiconductor silicon course of processing, edging, polishing, multi-wire saw machining
During the scrap silicon that produces, or superfine metal silica flour；The particle diameter of described scrap silicon or superfine metal silica flour is that 0.5-5 is micro-
Rice.
Silicon powder the most as claimed in claim 1 carries out the method that plastic circuit is prepared in Galvanic reaction, it is characterised in that step
Suddenly, in (1), it is 1%～50% that described silicon powder accounts for the mass percent in described plastics parent.
4. carrying out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction as described in claim 1 or 2 or 3, its feature exists
In, in step (3), described Galvanic displacement reaction is replaced by metal ion by described silicon powder surface, forms metal film bag
It is overlying on the particle on silicon powder surface.
5. carrying out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction as described in one of claim 1-4, its feature exists
In, in step (3), the time >=0.5min of described Galvanic displacement reaction.
6. carrying out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction as described in one of claim 1-5, its feature exists
In, in step (3), described metal ion is the one in copper ion, nickel ion, palladium ion, gold ion and silver ion.
Silicon powder the most as claimed in claim 6 carries out the method that plastic circuit is prepared in Galvanic reaction, it is characterised in that step
(3), in, the solution of described copper ion is the one in copper chloride solution, copper nitrate solution or copper-bath；Described nickel ion
Solution be nickel nitrate solution；The solution of described palladium ion is palladium nitrate solution or palladium chloride solution；The solution of described gold ion
For chlorauric acid solution or chloroaurate solution；The solution of described silver ion is silver nitrate solution or Argentous fluoride solution.
8. carrying out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction as described in one of claim 1-7, its feature exists
In, in step (3), the concentration of described metal ion is 0.001-10.0mol/L.
Silicon powder the most as claimed in claim 8 carries out the method that plastic circuit is prepared in Galvanic reaction, it is characterised in that step
(3), in, the concentration of described metal ion is 0. 1-5mol/L.
10. carrying out, with silicon powder, the method that plastic circuit is prepared in Galvanic reaction as described in one of claim 1-9, its feature exists
In, in step (3), the concentration of described fluorion is 0.1-5mol/L.
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| CN201610547824.XA CN106102309A (en) | 2016-07-13 | 2016-07-13 | The method that plastic circuit is prepared in Galvanic reaction is carried out with silicon powder |
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| CN201610547824.XA CN106102309A (en) | 2016-07-13 | 2016-07-13 | The method that plastic circuit is prepared in Galvanic reaction is carried out with silicon powder |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148808A (en) * | 1994-11-22 | 1996-06-07 | Nec Corp | Manufacture of printed wiring board |
| CN104972112A (en) * | 2015-07-17 | 2015-10-14 | 吕铁铮 | Precious metal-silicon composite powder prepared through galvanic reaction and application thereof |
| CN105543813A (en) * | 2016-03-01 | 2016-05-04 | 上海安费诺永亿通讯电子有限公司 | Method for producing precise metal circuit on plastic surface |
-
2016
- 2016-07-13 CN CN201610547824.XA patent/CN106102309A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148808A (en) * | 1994-11-22 | 1996-06-07 | Nec Corp | Manufacture of printed wiring board |
| CN104972112A (en) * | 2015-07-17 | 2015-10-14 | 吕铁铮 | Precious metal-silicon composite powder prepared through galvanic reaction and application thereof |
| CN105543813A (en) * | 2016-03-01 | 2016-05-04 | 上海安费诺永亿通讯电子有限公司 | Method for producing precise metal circuit on plastic surface |
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