CN106100597B - A kind of power driven system of high temperature resistant low frequency discrete device - Google Patents
A kind of power driven system of high temperature resistant low frequency discrete device Download PDFInfo
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- CN106100597B CN106100597B CN201610350473.3A CN201610350473A CN106100597B CN 106100597 B CN106100597 B CN 106100597B CN 201610350473 A CN201610350473 A CN 201610350473A CN 106100597 B CN106100597 B CN 106100597B
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- 238000001914 filtration Methods 0.000 claims abstract description 8
- 238000013461 design Methods 0.000 claims abstract description 7
- 230000003321 amplification Effects 0.000 claims description 24
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 14
- 238000010586 diagram Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 230000009970 fire resistant effect Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000002277 temperature effect Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 238000007600 charging Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 230000007774 longterm Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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Abstract
A kind of power driven system of high temperature resistant low frequency discrete device, using discrete device, 150 DEG C of high temperature resistant and frequency it is adjustable and there is temperature-compensation circuit and the more gear selections of power to export.Circuit part of the invention is all made of discrete device design resistant to high temperature.Whole system can be run at a temperature of very high 150 DEG C, can be with long-term stable work.The present invention can pass through ground, pipeline and carry out the functions such as wireless charging, communication to in-ground sensor power supply, can charge, communicate under high temperature environment, can also be charged and be communicated at normal temperature.The each unit module wherein passed through is respectively as follows: high temperature resistant control unit, high temperature resistant 125KHz ± 20KHz frequency modulation square-wave generator unit, high temperature resistant low frequency filtering and temperature compensation unit, high temperature resistant has the output power of antenna selecting unit of temperature-compensating.The present invention can be used as hand-held charging and communication system, have it is small in size, it is light-weight, the characteristics of being convenient for carrying.
Description
Technical field
The present invention relates to power driven systems, more particularly to the power driven system of high temperature resistant discrete device.
Background technique
With the fast development of Internet of Things, the Internet of Things of special environment will challenge to routine techniques.For special type
Military, extraordinary civilian and special industrial field, need on the ground or in the pipeline resistant to high temperature of underground a large amount of sensor, transponder and
Other radio frequency systems, and these sensors, transponder do not have power supply, and drive system or radio frequency without adapting to high temperature and humidity
System, low frequency can solve the demand of high humidity, but be badly in need of high temperature resistant driving or radio frequency system, and high temperature resistant low frequency integrated computation is put
Big device chip is even up to 175 DEG C of environment for 150 DEG C or more and is able to satisfy almost not having for rail-to-rail working performance requirement
Have.Drive system and radio frequency system for 175 DEG C of low frequency discrete devices of high temperature resistant are even more to have not been reported both at home and abroad.Therefore
This system uses 175 DEG C of high temperature resistant of discrete device, and the integrated transporting discharging driving circuit for substituting room temperature is designed.The design uses
High temperature resistant discrete device, and there is temperature compensation function, it is able to solve problem resistant to high temperature, uses adjustable Frequency can be with
Transporting requirement of the special environment to radiofrequency signal is adapted to, amplifying circuit is selected using power multi gear, can solve different application
To the different demands of power.Reliability, the cost and performance aspect of the design in particular circumstances have advantage.The design is suitble to
Power drive, the application of wireless charging aspect, applying in radio frequency identification and Internet of Things application in particular circumstances etc..
For this purpose, the present invention completes a kind of power driven system of high temperature resistant low frequency discrete device.
Summary of the invention
The purpose of the invention is to promote developing in depth and breadth for China's Internet of Things, promote extraordinary military, extraordinary civilian, extraordinary
Industry as petroleum detection pipeline, various liquid, gas delivery conduit wireless maintenance in sensor power issue, overcome special type
The shortage problem of drive system under environment, the present invention completes a kind of power drive system of high temperature resistant low frequency discrete device thus
System.The system can be resistant to 175 DEG C of high temperature, has high-temperature temperature compensation function, is capable of providing the 0- of 13.56MHz and following frequency modulation
5V low-frequency square-wave signal provides the multinomial power drive selection function of power 100%, 75%, 50%, 25% and zero.
The present invention can be achieved through the following technical solutions:
A kind of power driven system of high temperature resistant low frequency discrete device, the system include the control of high temperature resistant low frequency discrete device
Device and peripheral circuit processed, prime square wave are recommended amplification output circuit, the second level RC filter circuit with temperature-compensation circuit, are had
The power amplification selection circuit of temperature-compensating, output include device housings body, capacitor, power switch, the interface of circuit, for establishing by cable
It closes.Circuit board is fixed in device housings body.The fixed printing of capacitor, power switch, the interface of circuit, power switch and welding
On circuit boards, device housings body is a regular cuboid；It is opened on the left of the circuit board of device housings body inner upper equipped with power supply
It closes, power switch；The interface with circuit connection is fixed on the right side of the circuit board of outer housing inner upper.
A kind of power driven system of high temperature resistant low frequency discrete device, including four major parts: high temperature resistant control circuit,
The discrete device pulse-generating circuit of 13.56MHz and following frequency modulation, resistance to 175 DEG C of high temperature and the RC second order with temperature-compensating are filtered
Wave circuit, the power amplification output select circuit with temperature-compensating.
Entire power driven system circuit realization is divided into following unit module: high temperature resistant control unit, high temperature resistant
It is 13.56MHz and following frequency modulation square-wave generator unit, high temperature resistant low frequency filtering unit, high temperature resistant output power selecting unit, resistance to
High temperature power amplifies driving unit.
High temperature resistant control unit is made of controller MCU and crystal oscillating circuit, power switch circuit.
The discrete device unit that 13.56MHz and following pulse generate is made of push-pull circuit.
Resistance to 175 DEG C of high temperature and with temperature-compensating RC second-order filter unit by Order RC filter circuit and temperature-compensating electricity
Road composition.
High temperature resistant output power selecting unit is made of No. four amplifying circuits.
The impulse generating unit and high temperature resistant list of the discrete device unit of the 13.56MHz and following frequency modulation of resistance to 175 DEG C of high temperature
Piece machine PWM pin is connected, and output end is connected with Order RC filter unit resistant to high temperature.Order RC unit and resistance temperature
Compensating unit is connected, and is connected with Q2A amplifier circuit resistant to high temperature, amplifier circuit and diode temperature compensation circuit
It is connected.High temperature resistant Q2A amplifier circuit output is connected with power selection circuitry.
The present invention realizes power using MCU as control core, by high temperature resistant discrete component circuit and high temperature compensation circuit
More gear selections of amplifying circuit, power selection include 100% power discrete device output circuit of high temperature resistant, 75% function of high temperature resistant
Rate discrete device output amplifier, 50% power discrete device output amplifier of high temperature resistant, 25% power discrete of high temperature resistant
The circuit that device output amplifier and fire resistant electric wire output power are zero.MCU, which can control, selects different output powers.
Realize that each unit module of whole system function is respectively as follows: high temperature resistant control and square wave generating unit, high temperature resistant are filtered
Wave, the power amplification selecting unit with high temperature compensation unit.Wherein amplifying unit is recommended with square wave in control section and power is put
Big selecting unit is connected, and square wave push-pull amplifier circuit is connected with filter circuit and temperature-compensation circuit, so that high temperature resistant power
Selection system works at high temperature more stable.
Each section modular unit is specifically described below.
High temperature resistant control unit includes pyrostat and reset circuit.Wherein reset circuit is connected with pyrostat
It connects, reset circuit is controlled to a power supply.
Crystal oscillator unit includes crystal oscillator circuit, and crystal oscillator circuit is connected with controller.
Power switch unit includes 9V power switch circuit and 5V power switch circuit.5V power switch circuit is respectively and multiple
Position circuit, controller are connected with square wave push-pull amplifier circuit.9V power switch circuit is connected with amplifier Q2A amplifying circuit
It connects.
It includes that 13.56MHz and following frequency modulation recommend square wave generating unit circuit that square wave, which recommends amplifying unit 4,.Recommend square wave
The input terminal that circuit occurs is connected with controller PWM pin, and output end is connected with Order RC filter circuit.
High temperature resistant filter unit 5 includes Order RC filter circuit.Order RC filter circuit recommends amplifying unit phase with square wave
Connection, is connected with resistance high temperature compensation unit, and is connected with the input terminal of power drive Q2A amplification selecting unit.
High temperature compensation unit 6 includes resistance high temperature compensation element circuit.Resistance high temperature compensation circuit is electric with Order RC respectively
Amplifying unit is recommended with square wave and is connected in road.
Power drive amplify selecting unit 7 include power drive amplification Q2A amplifying circuit and power 100%, 75%,
50%, 25% and 0 output multinomial selection circuit.Wherein power drive Q2A amplifies selecting unit and Order RC filter circuit
It is connected.The multinomial selection circuit and Q2A power drive amplifying unit phase that power 100%, 75%, 50%, 25% and 0 exports
Connection.
The present invention can obtain following beneficial effect compared with prior art.
The present invention, can be 175 DEG C with high temperature resistant compared with current all kinds of power driven systems, and using discrete device and frequency can
Adjust and have temperature-compensating and the more gear selection outputs of power.Circuit of the invention is all made of discrete device design resistant to high temperature.
Whole system can be run at a temperature of 175 DEG C.The present invention can be realized 13.56MHz and following frequencies adjustable signal, and temperature is mended
It is high to repay circuit degree of fitting, circuit being capable of steady operation at high temperature.Power drive signal of the invention can be with after radio-frequency antenna
It passes through ground, the functions such as pipeline charges to in-ground sensor power supply, communicates, can charge under hot and humid environment and logical
Letter, can also be charged and be communicated at normal temperature.The present invention can choose multi gear position power output, to meet different chargings
And communication requirement.The present invention can be used as the power driving circuit of hand-held charging and communication system, have small in size, light-weight, side
The characteristics of Portable belt.
Detailed description of the invention
Fig. 1 is structure principle chart of the invention；
Fig. 2 is frequency modulation side's wave generation circuit and filtering and high temperature compensation circuit diagram of the invention；
Fig. 3 is the schematic diagram of multi gear power amplification circuit of the invention；
Fig. 4 is board structure of circuit block diagram of the invention
In figure: 4, square wave push-pull amplifier circuit, 5, Order RC filter circuit, 6, high temperature compensation circuit, 7, power drive and
Selection circuit.
Specific embodiment
Below with reference to the drawings and specific embodiments, the invention will be further described.
Fig. 1 is structure principle chart of the invention, and MCU used in the present invention is Anti-high temperature chip.The present invention is according to controller
The requirement of MCU databook designs related circuit schematic diagram, then draw PCB.In view of traditional integrated computation
The problem of amplifier cannot meet the requirements power drive resistant to high temperature, uses high temperature resistant discrete device circuit and temperature is mended
It repays circuit and uses high temperature-resistant printing circuit board, and interface section is plotted in the side of printed circuit board, the control section MCU
The other side of printed circuit board is plotted in other electronic components with MCU close relation；The block diagram of total such as Fig. 4 institute
Show；
The structure of MCU and reset circuit, crystal oscillating circuit and power switch includes system reset circuit, crystal oscillating circuit, electricity
Source switching circuit.
Reset circuit is connected with MCU, so that entire circuit system be made to reset.
Crystal oscillating circuit is connected with the OSC pin of MCU, provides clock for entire circuit system.
Power switch circuit is connected with two enable ends PWR of MCU, determines to switch entire circuit system 5V and 9V power supply.
Fig. 2 is frequency modulation side's wave generation circuit and filtering and high temperature compensation circuit diagram of the invention, including 13.56MHz
And following frequency modulation side's wave generation circuit 4, Order RC filter circuit 5, high temperature compensation circuit 6.
13.56MHz and following frequency modulation side's wave generation circuit 4 are connected with the PWM pin of MCU, are set by MCU control timer
It sets, makes PWM pin output 13.56MHz and frequency below is adjustable, square-wave signal of amplitude 0-5V.The signal through Q1A and
The push-pull output circuit that Q1B is constituted drives subsequent RC filter circuit.
Order RC filter circuit 5 is using the RC filter circuit of two resistance and capacitor composition.R3-R7 and C1-C2 constitutes band
The second order RC lowpass wave circuit of temperature-compensating.R5 is 1.2k at room temperature, is 1.65k, R7, R6 series connection in 150 DEG C of high temperature
Afterwards with R5 parallel connection, temperature-compensation circuit 6 is constituted, to compensate the variation of the signal amplitude due to caused by high temperature.R7 resistance is selected to exist
Resistance value is 2k at 25 DEG C, is 4.3k at 150 DEG C.It again can be 25 with 2.7k resistor coupled in parallel after it is connected with 150 Europe resistance
DEG C, compensate exactly on 150 DEG C and 175 DEG C of temperature spots.Selecting the resistance value of R7 to vary with temperature is linear approximate relationship, therefore 25
DEG C to 175 DEG C other point also compensate exactly for temperature effect.C3 is coupled capacitor, is connected with the multi gear power amplifier of rear class.
Fig. 3 is the schematic diagram of multi gear power amplification circuit of the invention, and D1 is second temperature compensation device, in temperature liter
Increase the DC offset voltage of base stage when high, influence brought by the reduction of Q2AVbe when offsetting high temperature.It can be by soft
Part setting provides five kinds of power mode outputs.
When circuit is in mode for the moment: the work of 100% power output.D1, R9 and R10 provide the left side 7.6V for the base stage of Q2A
Right bias voltage.R11, R12, C4, Q2A and R13 constitute total radio amplifier.While R12 and C4 is to stable operating point
Exchange amplification factor is improved, selects different C4 in 13.56MHz and following different frequency range, is equivalent to Q2A emitter institute connecting resistance
250Ω.When Q2A collector institute's connecting resistance is 4.7k, amplification factor is maximum, is 4.7k/250R=18.8 times, 100% power is defeated
It works out.
When circuit is in mode two, three, four: MCU passes through Q3A, Q3B, Q4A control connection R14 or R15 or R16 to ground
When current potential, reduce Q2A amplification factor also, obtain respectively: the work of 2 75% output power of mode, 3 50% output power of mode
Work, the work of 4 25% output power of mode.When mode five, MCU does not export square-wave signal, exports zero energy.
Last draw PCB.Fig. 2,3 circuit diagrams component be just all plotted on the same circuit module.
Fig. 4 is board structure of circuit block diagram of the invention.
Other interface circuits include that the UART interface of MCU can be connected by connecting terminal with PC machine.
Claims (10)
1. a kind of power driven system of high temperature resistant low frequency discrete device, it is characterised in that: it is most of that the system is divided into four: resistance to height
The discrete device pulse-generating circuit of temperature control circuit, 13.56MHz and following frequency modulation, resistance to 175 DEG C of high temperature and have temperature-compensating
RC second-order filter circuit, the power amplification output select circuit with temperature-compensating；The system includes: high temperature resistant low frequency discrete
Controller and peripheral circuit, the prime square wave of device recommend amplification output circuit, the second level RC filtering with temperature-compensation circuit
Circuit, the power amplification selection circuit with temperature-compensating, output include that device housings body, capacitor, power switch, circuit connect
Mouth, power switch；Circuit board is fixed in device housings body；Capacitor, power switch, the interface of circuit, power switch are fixed
On circuit boards, device housings body is a regular cuboid for printing and welding；On the left of the circuit board of device housings body inner upper
Equipped with power switch, power switch；The interface with circuit connection is fixed on the right side of the circuit board of outer housing inner upper；
Entire power driven system circuit realization is divided into following unit module: high temperature resistant control unit, high temperature resistant 13.56MHz and
Following frequency modulation square-wave generator unit, high temperature resistant low frequency filtering unit, high temperature resistant output power selecting unit, high temperature resistant power are put
Big driving unit；
High temperature resistant control unit is made of controller MCU and crystal oscillating circuit, power switch circuit；
The discrete device unit that 13.56MHz and following pulse generate is made of push-pull circuit；
Resistance to 175 DEG C of high temperature and with temperature-compensating RC second-order filter unit by Order RC filter circuit and temperature-compensation circuit group
At；
High temperature resistant output power selecting unit is made of No. four amplifying circuits；
The impulse generating unit and high-temperature resisting one-chip machine of the discrete device unit of the 13.56MHz and following frequency modulation of resistance to 175 DEG C of high temperature
PWM pin is connected, and output end is connected with Order RC filter unit resistant to high temperature；Order RC unit and resistance temperature compensate
Unit is connected, and is connected with Q2A amplifier circuit resistant to high temperature, and amplifier circuit is connected with diode temperature compensation circuit
It connects；High temperature resistant Q2A amplifier circuit output is connected with power selection circuitry；
This system realizes power amplification using MCU as control core, by high temperature resistant discrete component circuit and high temperature compensation circuit
More gear selections of circuit, power selection include 100% power discrete device output circuit of high temperature resistant, 75% power of high temperature resistant point
Vertical device output amplifier, 50% power discrete device output amplifier of high temperature resistant, 25% power discrete device of high temperature resistant
The circuit that output amplifier and fire resistant electric wire output power are zero；MCU, which can control, selects different output powers；
Realize that each unit module of whole system function is respectively as follows: high temperature resistant control and square wave generating unit, high temperature resistant filtering, tool
There is the power amplification selecting unit of high temperature compensation unit；Wherein control section and square wave recommend amplifying unit and power amplification selects
Unit is connected, and square wave push-pull amplifier circuit is connected with filter circuit and temperature-compensation circuit, so that high temperature resistant power selection system
System works at high temperature more stable.
2. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: resistance to height
Warm control unit includes pyrostat and reset circuit；Wherein reset circuit is connected with pyrostat, reset circuit with
Power supply is connected.
3. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: crystal oscillator
Unit includes crystal oscillator circuit, and crystal oscillator circuit is connected with controller.
4. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: power supply
Switch unit includes 9V power switch circuit and 5V power switch circuit；5V power switch circuit respectively with reset circuit, control
Device is connected with square wave push-pull amplifier circuit；9V power switch circuit is connected with amplifier Q2A amplifying circuit.
5. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: square wave
Recommending amplifying unit (4) includes that 13.56MHz and following frequency modulation recommend square wave generating unit circuit；The side's of recommending wave generation circuit
Input terminal is connected with controller PWM pin, and output end is connected with Order RC filter circuit.
6. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: resistance to height
Warm filter unit (5) includes Order RC filter circuit；Order RC filter circuit recommends amplifying unit with square wave and is connected, with resistance
High temperature compensation unit is connected, and is connected with the input terminal of power drive Q2A amplification selecting unit.
7. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: high temperature
Compensating unit (6) includes resistance high temperature compensation element circuit；Resistance high temperature compensation circuit is pushed away with Order RC circuit and square wave respectively
Amplifying unit is drawn to be connected.
8. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: power
Drive amplification selecting unit (7) includes power drive amplification Q2A amplifying circuit and power 100%, 75%, 50%, 25% and 0
The multinomial selection circuit of output；Wherein power drive Q2A amplifies selecting unit and is connected with Order RC filter circuit；Power
100%, the multinomial selection circuit of 75%, 50%, 25% and 0 output is connected with Q2A power drive amplifying unit.
9. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: this is
System MCU used is Anti-high temperature chip；This system designs related circuit schematic diagram according to the requirement of controller MCU databook,
Then draw PCB；In view of traditional integrated operational amplifier cannot meet the requirements power drive resistant to high temperature
The problem of, it uses high temperature resistant discrete device circuit and temperature-compensation circuit and uses high temperature-resistant printing circuit board, and interface
Part is plotted in the side of printed circuit board, is plotted in the control section MCU and with other electronic components of MCU close relation
The other side of printed circuit board；
The structure of MCU and reset circuit, crystal oscillating circuit and power switch includes that system reset circuit, crystal oscillating circuit, power supply are opened
Powered-down road；
Reset circuit is connected with MCU, so that entire circuit system be made to reset；
Crystal oscillating circuit is connected with the OSC pin of MCU, provides clock for entire circuit system；
Power switch circuit is connected with two enable ends PWR of MCU, determines to switch entire circuit system 5V and 9V power supply；
Frequency modulation side's wave generation circuit and filtering and high temperature compensation circuit include 13.56MHz and following frequency modulation side's wave generation circuit
(4), Order RC filter circuit (5), high temperature compensation circuit (6)；
13.56MHz and following frequency modulation side's wave generation circuit (4) are connected with the PWM pin of MCU, are arranged by MCU control timer,
Make PWM pin output 13.56MHz and frequency below is adjustable, square-wave signal of amplitude 0-5V；The signal is through Q1A and Q1B structure
At push-pull output circuit drive subsequent RC filter circuit；
Order RC filter circuit (5) is using the RC filter circuit of two resistance and capacitor composition；R3-R7 and C1-C2 constitutes band temperature
Spend the second order RC lowpass wave circuit of compensation；R5 is 1.2k at room temperature, is 1.65k in 150 DEG C of high temperature, after R7, R6 series connection
It with R5 parallel connection, constitutes temperature-compensation circuit (6), to compensate the variation of the signal amplitude due to caused by high temperature；R7 resistance is selected to exist
Resistance value is 2k at 25 DEG C, is 4.3k at 150 DEG C；It again can be 25 with 2.7k resistor coupled in parallel after it is connected with 150 Europe resistance
DEG C, compensate exactly on 150 DEG C and 175 DEG C of temperature spots；Selecting the resistance value of R7 to vary with temperature is linear approximate relationship, therefore 25
DEG C to 175 DEG C other point also compensate exactly for temperature effect；C3 is coupled capacitor, is connected with the multi gear power amplifier of rear class；
In multi gear power amplification circuit, D1 is second temperature compensation device, makes the direct current biasing electricity of base stage when the temperature rises
Pressure increases, influence brought by the reduction of Q2AVbe when offsetting high temperature；It can be arranged by software and five kinds of power outputs are provided
Mode；
When circuit is in mode for the moment: the work of 100% power output；D1, R9 and R10 provide the biasing of 7.6V for the base stage of Q2A
Voltage；R11, R12, C4, Q2A and R13 constitute total radio amplifier；R12 with C4 to stable operating point while improve exchange
Amplification factor selects different C4 in 13.56MHz and following different frequency range, Q2A emitter institute connecting resistance is made to be equivalent to 250 Ω；
When Q2A collector institute's connecting resistance is 4.7k, amplification factor is maximum, is 4.7k/250R=18.8 times, the work of 100% power output；
When circuit is in mode two, three, four: MCU passes through Q3A, Q3B, Q4A control connection R14 or R15 or R16 to ground potential
When, reduce Q2A amplification factor also, obtain respectively: the work of 2 75% output power of mode, 3 50% output power work of mode
Make, the work of 4 25% output power of mode；When mode five, MCU does not export square-wave signal, exports zero energy.
10. a kind of power driven system of high temperature resistant low frequency discrete device according to claim 1, it is characterised in that: its
His interface circuit includes that the UART interface of MCU can be connected by connecting terminal with PC machine.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610350473.3A CN106100597B (en) | 2016-05-24 | 2016-05-24 | A kind of power driven system of high temperature resistant low frequency discrete device |
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| CN201610350473.3A CN106100597B (en) | 2016-05-24 | 2016-05-24 | A kind of power driven system of high temperature resistant low frequency discrete device |
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| CN106100597B true CN106100597B (en) | 2019-01-22 |
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| CN113114287A (en) * | 2021-05-08 | 2021-07-13 | 北京工业大学 | High-temperature 175-degree electromagnetic wave transmitting circuit of system |
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| CN1116886A (en) * | 1993-11-29 | 1996-02-14 | 摩托罗拉公司 | Method and apparatus for providing a modified temperature compensation signal in a TCXO circuit |
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2016
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|---|---|---|---|---|
| EP0562658A1 (en) * | 1992-03-18 | 1993-09-29 | Koninklijke Philips Electronics N.V. | Amplifier arrangement |
| CN1116886A (en) * | 1993-11-29 | 1996-02-14 | 摩托罗拉公司 | Method and apparatus for providing a modified temperature compensation signal in a TCXO circuit |
| CN101478293A (en) * | 2008-12-02 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Temperature compensation power amplifier circuit |
| CN202857066U (en) * | 2012-09-27 | 2013-04-03 | 杭州鸿德照明科技有限公司 | Novel high-power LED isolation constant-current driving circuit composed by discrete components |
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| 一种为碳化硅MOSFET设计的高温驱动电路;祁锋 等;《电工技术学报》;20151231;第30卷(第23期);第24-31页 |
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Granted publication date: 20190122 |