CN106098898A - 一种led贴片封装结构 - Google Patents

一种led贴片封装结构 Download PDF

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Publication number
CN106098898A
CN106098898A CN201610490786.9A CN201610490786A CN106098898A CN 106098898 A CN106098898 A CN 106098898A CN 201610490786 A CN201610490786 A CN 201610490786A CN 106098898 A CN106098898 A CN 106098898A
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heat sink
led
insulating barrier
encapsulating structure
led chip
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CN201610490786.9A
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储世昌
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Individual
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Abstract

本发明公开了一种LED贴片封装结构，包括散热器，其特征在于：所述散热器顶部通过焊料连接有散热基板，所述散热基板顶部通过焊料连接有芯片热沉，所述芯片热沉外表面设有绝缘层，所述芯片热沉顶部设有键合层，所述键合层顶部设有LED芯片，所述LED芯片顶部设有封装透镜，所述封装透镜与绝缘层顶部相连且位于同一水平线上，所述芯片热沉顶端左右两边绝缘层外连接有电极，所述电极通过金线与LED芯片相连。本发明散热性能高、总体效率高、使用寿命长、可靠性高、减少生产成本、减少LED封装树脂的老化效应。

Description

一种LED贴片封装结构
技术领域
本发明涉及一种LED贴片封装结构。
背景技术
照明领域中，考虑到生产工艺、生产成本、灯具形态等技术要求，越来越多的设计采用封装方式的LED光源，其散热性能是LED光源的一重要因素，现有的LED光源大多其热量累积越来越严重，而如果不能有效地耗散这些热量，随之而来的热效应将会对LED光源性能产生严重的影响：总体效率变低，正向压降，光波红移，色温改变，寿命缩短,可靠性降低等，而其封装过程中，随着封装结构温度的增加大多数塑料和环氧树脂暴露在紫外线辐射下黄老化现象会越来越严重，需对其进行改进。
发明内容
本发明所要解决的技术问题在于提供一种散热性能高、总体效率高、使用寿命长、可靠性高、减少生产成本、减少LED封装树脂的老化效应的LED贴片封装结构。
一种LED贴片封装结构，包括散热器，其特征在于：所述散热器顶部通过焊料连接有散热基板，所述散热基板顶部通过焊料连接有芯片热沉，所述芯片热沉外表面设有绝缘层，所述芯片热沉顶部设有键合层，所述键合层顶部设有LED芯片，所述LED芯片顶部设有封装透镜，所述封装透镜与绝缘层顶部相连且位于同一水平线上。
所述芯片热沉顶端左右两边绝缘层外连接有电极。
所述电极通过金线与LED芯片相连。
本发明的有益效果：散热性能高、总体效率高、使用寿命长、可靠性高、减少生产成本、减少LED封装树脂的老化效应。
附图说明
图1为本发明结构示意图。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实施例，进一步阐述本发明。
如图1所示，一种LED贴片封装结构，包括散热器1，散热器1顶部通过焊料2连接有散热基板3，散热基板3顶部通过焊料2连接有芯片热沉4，芯片热沉4外表面设有绝缘层5，芯片热沉4顶部设有键合层6，键合层6顶部设有LED芯片7，LED芯片7顶部设有封装透镜8，封装透镜8与绝缘层5顶部相连且位于同一水平线上。
芯片热沉4顶端左右两边绝缘层5外连接有电极9。
电极9通过金线10与LED芯片7相连。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (3)

1.一种LED贴片封装结构，包括散热器，其特征在于：所述散热器顶部通过焊料连接有散热基板，所述散热基板顶部通过焊料连接有芯片热沉，所述芯片热沉外表面设有绝缘层，所述芯片热沉顶部设有键合层，所述键合层顶部设有LED芯片，所述LED芯片顶部设有封装透镜，所述封装透镜与绝缘层顶部相连且位于同一水平线上。
2.根据权利要求1所述一种LED贴片封装结构，其特征在于：所述芯片热沉顶端左右两边绝缘层外连接有电极。
3.根据权利要求2所述一种LED贴片封装结构，其特征在于：所述电极通过金线与LED芯片相连。
CN201610490786.9A 2016-06-28 2016-06-28 一种led贴片封装结构 Pending CN106098898A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110513606A (zh) * 2018-10-29 2019-11-29 永康市道可道科技有限公司 室外led灯驱蚊系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1608326A (zh) * 2001-12-29 2005-04-20 杭州富阳新颖电子有限公司 发光二极管及其发光二极管灯
CN101315927A (zh) * 2008-07-21 2008-12-03 华南理工大学 一种大功率led相变热沉结构
CN101696786A (zh) * 2009-10-27 2010-04-21 彩虹集团公司 大功率led散热封装结构
KR20100079252A (ko) * 2008-12-31 2010-07-08 서울반도체 주식회사 발광 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1608326A (zh) * 2001-12-29 2005-04-20 杭州富阳新颖电子有限公司 发光二极管及其发光二极管灯
CN101315927A (zh) * 2008-07-21 2008-12-03 华南理工大学 一种大功率led相变热沉结构
KR20100079252A (ko) * 2008-12-31 2010-07-08 서울반도체 주식회사 발광 장치
CN101696786A (zh) * 2009-10-27 2010-04-21 彩虹集团公司 大功率led散热封装结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110513606A (zh) * 2018-10-29 2019-11-29 永康市道可道科技有限公司 室外led灯驱蚊系统
CN110513606B (zh) * 2018-10-29 2021-02-26 临海市小核桃工业设计服务部 室外led灯驱蚊系统

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