CN106094426A - A kind of Thinfilm pattern and forming method, display device - Google Patents

A kind of Thinfilm pattern and forming method, display device Download PDF

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Publication number
CN106094426A
CN106094426A CN201610452270.5A CN201610452270A CN106094426A CN 106094426 A CN106094426 A CN 106094426A CN 201610452270 A CN201610452270 A CN 201610452270A CN 106094426 A CN106094426 A CN 106094426A
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China
Prior art keywords
thin layer
impression block
pattern
underlay substrate
forming method
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CN201610452270.5A
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Chinese (zh)
Inventor
张斌
周婷婷
何晓龙
孙雪菲
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201610452270.5A priority Critical patent/CN106094426A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Abstract

The invention provides a kind of Thinfilm pattern and forming method, display device, relate to Display Technique field, the method is without using transfer and etching can form Thinfilm pattern, and technique is simple, and production cost is low, the time is short;Also can avoid the error because repeatedly transferring generation, improve the precision of Thinfilm pattern.This forming method includes: contacted with having figuratum impression block by the underlay substrate with thin layer, and the fusing point/softening point of the material of thin layer is less than the substrate of underlay substrate and the fusing point/softening point of the material of impression block;In a heated condition, using impression block to imprint thin layer, heating-up temperature enables to thin layer and softens or become liquid, the substrate of underlay substrate and the impression block original state of holding;To the impression block after impressing and thin layer cooling so that the thin layer of liquid solidify to form Thinfilm pattern;Impression block is separated with the underlay substrate being formed with Thinfilm pattern.The present invention is applicable to the making of Thinfilm pattern.

Description

A kind of Thinfilm pattern and forming method, display device
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of Thinfilm pattern and forming method, display device.
Background technology
Nanometer embossing, as figure transfer techniques of future generation, has obtained concern and the research of pertinent art, It has immeasurable prospect in the preparation of nano-pattern.
At present, nanometer embossing and dry etching technology combine formed nano-pattern method the most popular.Said method Comprise the following steps: first, with reference to shown in (a) in Fig. 1, the substrate 2 of underlay substrate 1 sequentially forms thin layer 3, firmly covers Lamina membranacea layer (Hard Mask Layer) 4 and photoresist layer (Resist Layer) 5;Then, with reference to shown in (b) in Fig. 1, adding Under conditions of heat or UV illumination, 6 pairs of photoresist layers 5 of impression block (Master) with nano-pattern are used to imprint;Impressing After completing, with reference to shown in (c) in Fig. 1, being separated with underlay substrate 1 by impression block 6, now, photoresist layer 5 has and impressing The corresponding nano-pattern of template 6;Then, with photoresist layer 5 as mask plate, the hard mask flaggy 4 of underlay substrate 1 is carried out dry etching, After dry etching completes, with reference to shown in (d) in Fig. 1, this hard mask flaggy 4 has the nano-pattern identical with photoresist layer 5;Finally, With hard mask flaggy 4 as mask plate, the thin layer 3 of underlay substrate 1 is carried out dry etching to form the nanometer shown in (e) in Fig. 1 Thinfilm pattern.
In said method, need to be transferred to successively by the nano-pattern of impression block on photoresist layer and hard mask flaggy, so After ultimately form nano thin-film pattern by etching again.The method complex process, production cost is high, the time is long;Meanwhile, repeatedly turn Print easily produces error, thus reduces the precision of pattern.
Summary of the invention
Embodiments of the invention provide a kind of Thinfilm pattern and forming method, display device, this thin-film pattern forming method Without using transfer and etching can form Thinfilm pattern, its technique is simple, and production cost is low, the time is short;At the same time it can also be keep away Exempt from the error because repeatedly transferring generation, thus improve the precision of Thinfilm pattern.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
On the one hand, it is provided that the forming method of a kind of Thinfilm pattern, described method includes:
The underlay substrate with thin layer is contacted with having figuratum impression block, wherein, the material of described thin layer Fusing point/softening point less than the substrate of described underlay substrate and the fusing point/softening point of the material of described impression block;
In a heated condition, using described impression block to imprint described thin layer, wherein, heating-up temperature can make Obtain described thin layer and soften or become liquid, the substrate of the most described underlay substrate and the described impression block original state of holding;
Described impression block after impressing and described thin layer are lowered the temperature, so that the described thin layer solidification of liquid Form Thinfilm pattern;
Described impression block and the described underlay substrate being formed with Thinfilm pattern are separated.
Optionally, described heating-up temperature is more than or equal to the fusing point/softening point of the material of described thin layer and less than described lining The substrate of substrate and the fusing point/softening point of the material of described impression block.
Optionally, the thermal coefficient of expansion of the material of described thin layer is more than the thermal expansion system of the material of described impression block Number.
Optionally, the pattern of described impression block is nano-pattern.
Optionally, the material of the substrate of described underlay substrate is glass, quartz or silicon chip.
Optionally, the material of described impression block is silicon, quartz, glass, metal or metal alloy.
Optionally, the material of described thin layer is aluminum or aluminium alloy.
Optionally, described described impression block after impressing and described thin layer are lowered the temperature, so that described thin film Layer formed Thinfilm pattern particularly as follows:
With the cooling rate less than 10 DEG C/min, the described impression block after impressing and described thin layer are lowered the temperature, So that described thin layer forms Thinfilm pattern.
Optionally, described by described impression block and be formed Thinfilm pattern described underlay substrate be separated after, Described method also includes:
Described impression block is carried out.
Optionally, described described impression block is carried out particularly as follows:
Described impression block is carried out by the etching liquid using described thin layer.
Optionally, described underlay substrate also includes: frame, for preventing the described thin layer of liquid from flowing out described substrate base Plate, the fusing point of the material of described frame is higher than described heating-up temperature.
On the other hand, it is provided that a kind of Thinfilm pattern, the forming method shape of Thinfilm pattern described in any of the above-described item is used Become.
Optionally, described Thinfilm pattern is metal grating pattern, metal electrode pattern or metal line pattern.
Another further aspect, it is provided that a kind of display device, including above-mentioned Thinfilm pattern.
The embodiment provides a kind of Thinfilm pattern and forming method, display device, this Thinfilm pattern side of being formed Method includes: contacted with having figuratum impression block by the underlay substrate with thin layer, wherein, and melting of the material of thin layer Point/softening point is less than the substrate of underlay substrate and the fusing point/softening point of the material of impression block;In a heated condition, pressure is used Thin layer is imprinted by die plate, and wherein, heating-up temperature enables to thin layer and softens or become liquid, simultaneously underlay substrate Substrate and impression block keep original state;Impression block after impressing and thin layer are lowered the temperature, so that liquid Thin layer solidify to form Thinfilm pattern;Impression block and the underlay substrate being formed with Thinfilm pattern are separated.Compare existing skill Art, this thin-film pattern forming method is without using transfer and etching can form Thinfilm pattern, and its technique is simple, production cost Low, the time is short;At the same time it can also be avoid the error because repeatedly transferring generation, thus improve the precision of Thinfilm pattern.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to Other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of the forming method of a kind of Thinfilm pattern of offer in prior art;
The schematic diagram one of the forming method of a kind of Thinfilm pattern that Fig. 2 provides for the embodiment of the present invention;
The schematic diagram two of the forming method of a kind of Thinfilm pattern that Fig. 3 provides for the embodiment of the present invention;
The structural representation of a kind of Thinfilm pattern that Fig. 4 provides for the embodiment of the present invention.
Reference:
1-underlay substrate;The substrate of 2-underlay substrate;3-thin layer;4-hard mask flaggy;5-photoresist layer;6-making ide Plate.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise Embodiment, broadly falls into the scope of protection of the invention.
Embodiment one
Embodiments providing the forming method of a kind of Thinfilm pattern, with reference to shown in Fig. 2, the method includes:
Shown in (b) in S01, reference Fig. 3, will have underlay substrate 1 and the figuratum impression block 6 of tool of thin layer 3 Contact, wherein, the fusing point/softening point of the material of thin layer 3 is molten less than the material of the substrate 2 of underlay substrate 1 and impression block 6 Point/softening point.
It should be noted that above-mentioned thin layer refers to utilize deposition or other techniques to produce on the substrate of underlay substrate Thin film, concrete, can first clean the substrate of underlay substrate, then, over the substrate deposition thin film material layer with Form the thin layer 3 shown in (a) in Fig. 3;This thin layer may finally form required thin film figure after following step Case.The thickness range of this thin layer can be 50nm-500nm, if the Thinfilm pattern that this thin layer is formed is metal grating pattern, And this metal grating pattern is eventually for making metal grating polaroid (WGP, Wire Grid Polarizer), then thin layer Thickness range can be 100nm-300nm, this film caliper uniformity be less than 5%, so advantageously form the gold that precision is high Belong to grating polarizer.Certainly, the thickness range of above-mentioned thin layer is not limited to this, specifically can be according to practical situation depending on.
The figuratum impression block of above-mentioned tool refers to produce the figuratum pressure of tool by patterning processes or other technique Die plate;Its concrete manufacture method is referred to prior art, repeats no more here.
The present invention is not construed as limiting for the material of thin layer, the substrate of underlay substrate and impression block, wherein, and underlay substrate Substrate can be identical with the material of impression block, it is also possible to different, as long as the fusing point/softening point meeting the material of thin layer is little In the substrate of underlay substrate and the fusing point/softening point of the material of impression block.Wherein, if thin layer, the lining of underlay substrate The material of the end and impression block belongs to crystal, then it has fusing point, example, and the material of the substrate of underlay substrate is quartz, stone British in crystal, its fusing point is about 1750 DEG C;If the material of the substrate of thin layer, underlay substrate and impression block belongs to amorphous Body, then it has softening point, and softening point refers to the temperature that material softens, example, and the material of the substrate of underlay substrate is glass, Glass belongs to noncrystal, the scope of its softening point at 600 DEG C-800 DEG C, different glass (such as high temp glass, high borosilicate in reality Glass etc.) concrete softening point different, the most non-crystal softening point needs to determine according to real material.Need further exist for explanation , in reality, the material of thin layer is mostly metal or metal alloy, and metal or metal alloy belong to crystal, this Time, the material of thin layer has fusing point.
Shown in (c) in S02, reference Fig. 3, in a heated condition, use impression block 6 that thin layer 3 is imprinted, its In, heating-up temperature enables to thin layer softening or the substrate becoming liquid, simultaneously underlay substrate and impression block keeps original State.It should be noted that heating temperature range here can be 400 DEG C-2500 DEG C, specifically also need to according to thin layer, The substrate of underlay substrate and the material of impression block are determined.Needing further exist for explanation, heating-up temperature enables to thin here The material softening of film layer has two layers of meaning: the first, the material of this thin layer is amorphous material, when heating-up temperature is soft more than it When changing point, this thin layer starts deliquescing, and is constantly in soft state;The second, the material of this thin layer is crystalline material, when adding Hot temperature is close to (the such as less than temperature within fusing point 100 DEG C) during its fusing point, and this thin layer also can deliquescing, now this thin layer Being also at soft state, when temperature continues raise and be more than its fusing point, this thin layer becomes liquid from soft state.Example , if the material of thin layer is aluminum, aluminum fusing point is about 660 DEG C, when for 600 DEG C, aluminum film layer understands deliquescing, is in soft state; When heating-up temperature continues raise and be more than 660 DEG C, aluminum film layer becomes liquid from soft state.If it addition, the material of thin layer Material is crystalline material, then can begin to impressing when the material of thin layer is in soft state;Can also be at the material of thin layer When material is changed into liquid, then imprint.The former needs bigger pressure time relatively the latter imprints.
S03, to impressing after impression block and thin layer lower the temperature, so that the thin layer of liquid solidify to form thin film Pattern.Here for cooling mode, time and speed be all not construed as limiting, specifically can be according to practical situation depending on.It addition, In this step, cooling can be stopped, to save Production Time after the thin layer of liquid solidifies.
Shown in (d) in S04, reference Fig. 3, impression block 6 and the underlay substrate 1 being formed with Thinfilm pattern are separated.
Compared to existing technology, above-mentioned thin-film pattern forming method can form Thinfilm pattern without using to transfer and etch, Its technique is simple, and production cost is low, the time is short;At the same time it can also be avoid the error because repeatedly transferring generation, thus improve thin film The precision of pattern.
Optionally, heating-up temperature fusing point/softening point more than or equal to the material of thin layer and the substrate less than underlay substrate Fusing point/softening point with the material of impression block.So, this heating-up temperature enables to the thin layer of crystalline material from solid-state change For liquid or make the thin layer of amorphous material soften, substrate and the impression block of underlay substrate keeps original shape simultaneously State, thus be conducive to imprinting.
Optionally, the thermal coefficient of expansion of the material of thin layer is more than the thermal coefficient of expansion of the material of impression block.Here, heat The coefficient of expansion refers to: under conditions of pressure is certain, the change of the object length value that unit temperature change is caused, this parameter Describe object, owing to temperature changes, the phenomenon of breathing occurs.Owing to the thermal coefficient of expansion of the material of thin layer is more than making ide The thermal coefficient of expansion of the material of plate, then after above-mentioned S03, both generations reducing in various degree, thus form gap. So, impression block and the underlay substrate being formed with Thinfilm pattern can realize natural separation, it is not necessary to other additional technique, from And saved production cost and time.
Optionally, the pattern of above-mentioned impression block is nano-pattern.It should be noted that formed by above-mentioned Thinfilm pattern The Thinfilm pattern that method is produced can be nano-pattern, it is also possible to is micron or centimetre pattern etc., is not construed as limiting here.Due to Current nano-device application is more, and the making required precision of nano-pattern is higher, and the forming method that the present invention provides is in system Make more aobvious advantage on nano-pattern.
Optionally, the material of the substrate of above-mentioned underlay substrate is glass, quartz or silicon chip.Ask in view of cost of manufacture Topic, in reality, many employing glass are as the substrate of underlay substrate.
Optionally, the material of above-mentioned impression block is silicon, quartz, glass, metal or metal alloy.Example, above-mentioned The material of impression block can be metal or the mixing materials of these several metals such as nickel, copper, chromium, due to nickel, copper, melting of chromium Point is above aluminum, and is not easy and aluminum formation alloy, therefore, and now can be using aluminium as the material of thin layer.
If during it should be noted that the material of impression block is metal alloy, the fusing point of metal alloy needs according to added The content of the elemental metals entered determines, content is different, and its fusing point is the most different.In most cases, in metal alloy composition, When a certain metal ingredient accounts for leading, the fusing point of this metal alloy is understood close to and is less than the fusing point of this metal.The fusing point of metal alloy Need to determine according to actual material.
Optionally, the material of thin layer is aluminum or aluminium alloy.It should be noted that aluminum fusing point is about 660 DEG C, aluminium alloy Fusing point less than 660 DEG C, concrete numerical value also to be determined according to other components in aluminium alloy.
If the material of the substrate of above-mentioned underlay substrate and impression block is glass, now the material of thin layer can be aluminum Or aluminium alloy.Illustrating with the material of thin layer for aluminum, aluminum fusing point is about 660 DEG C, and the softening point of glass is 700 DEG C of (these In only illustrate as a example by 700 DEG C), now the heating-up temperature in above-mentioned S02 can be set in [600 DEG C, 700 DEG C) it Between, such as 600 DEG C, 630 DEG C, 650 DEG C, 680 DEG C etc., requirement can be met.When heating-up temperature is set between 600 DEG C-660 DEG C Time, aluminum film layer is the most softened, now can be imprinted by intensified pressure, so that forming Thinfilm pattern, without etc. Impressing is just started when becoming liquid to aluminum film layer;When heating-up temperature is set between 660 DEG C-700 DEG C, aluminum film layer changes For liquid, now impressing desirable pressure is less, and heating-up temperature value is easier control.
If the material of thin layer is aluminium alloy, then heating-up temperature needs the fusing point according to this aluminium alloy and the softening point of glass Jointly determine.
Optionally, S03, to impressing after impression block and thin layer lower the temperature so that thin layer formed thin film figure Case particularly as follows:
With the cooling rate less than 10 DEG C/min, the impression block after impressing and thin layer are lowered the temperature, so that thin Film layer forms Thinfilm pattern.This way it is possible to avoid cooling rate is too fast, causes the substrate of underlay substrate to deform, thus cause shape Become Thinfilm pattern chap injustice problem.
Optionally, S04, by impression block and be formed Thinfilm pattern underlay substrate be separated after, the method is also Including: S05, impression block is carried out.So can dispose the residue on impression block, follow-up again make With, thus improve the utilization rate of impression block, reduce cost simultaneously.
Optionally, S05, impression block is carried out particularly as follows: use the etching liquid of thin layer that impression block is carried out Clean.Example, if the material of thin layer is, then can use the aluminum etching liquid of low concentration that impression block is carried out.
Optionally, above-mentioned underlay substrate also includes: frame, for preventing the thin layer of liquid from flowing out underlay substrate, frame The fusing point of material higher than heating-up temperature.Here the concrete set-up mode for frame is not construed as limiting.Example, frame can root According to the size of underlay substrate, substrate is arranged around thin layer one circle;It is, of course, also possible to be other set-up modes, the most not It is construed as limiting.Making for convenience, this frame can use same material to make with the substrate of underlay substrate.
Embodiment two
Embodiments provide a kind of Thinfilm pattern, the shape of the Thinfilm pattern of any one of embodiment one offer is provided One-tenth method is formed.This Thinfilm pattern, the Thinfilm pattern formed compared to existing technology, have the advantages that precision is high, error is little.
Above-mentioned Thinfilm pattern can be metal grating pattern, metal electrode pattern or metal line pattern.Concrete, metal Grating pattern may be used for forming metal grating polaroid etc., and metal electrode pattern may be used for being formed the grid of thin film transistor (TFT) Pole, source electrode and drain electrode etc., metal line pattern may be used for forming grid line, data wire, public electrode wire etc..Fig. 4 is for using this A kind of metal grating pattern that the method that bright embodiment one provides is formed, the cycle of this metal grating pattern is 200nm.
Embodiment three
Embodiments provide a kind of display device, including the Thinfilm pattern of any one that embodiment two provides.Should Display device can be liquid crystal display, Electronic Paper, OLED (Organic Light-Emitting Diode, organic light emission two Pole is managed) display device such as display and include that the TV of these display devices, digital camera, mobile phone, panel computer etc. are any There are product or the parts of display function.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and any Those familiar with the art, in the technical scope that the invention discloses, can readily occur in change or replace, should contain Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.

Claims (14)

1. the forming method of a Thinfilm pattern, it is characterised in that described method includes:
The underlay substrate with thin layer is contacted with having figuratum impression block, wherein, melting of the material of described thin layer Point/softening point is less than the substrate of described underlay substrate and the fusing point/softening point of the material of described impression block;
In a heated condition, using described impression block to imprint described thin layer, wherein, heating-up temperature enables to institute State thin layer and soften or become liquid, the substrate of the most described underlay substrate and the described impression block original state of holding;
Described impression block after impressing and described thin layer are lowered the temperature, so that the described thin layer of liquid solidify to form Thinfilm pattern;
Described impression block and the described underlay substrate being formed with Thinfilm pattern are separated.
Forming method the most according to claim 1, it is characterised in that described heating-up temperature is more than or equal to described thin layer Fusing point/the softening point of material and less than the substrate of described underlay substrate and the fusing point/softening point of the material of described impression block.
Forming method the most according to claim 1, it is characterised in that the thermal coefficient of expansion of the material of described thin layer is more than The thermal coefficient of expansion of the material of described impression block.
Forming method the most according to claim 1, it is characterised in that the pattern of described impression block is nano-pattern.
Forming method the most according to claim 1, it is characterised in that the material of the substrate of described underlay substrate be glass, Quartz or silicon chip.
Forming method the most according to claim 1, it is characterised in that the material of described impression block is silicon, quartz, glass Glass, metal or metal alloy.
7. according to the forming method described in any one of claim 1-6, it is characterised in that the material of described thin layer be aluminum or Aluminium alloy.
Forming method the most according to claim 1, it is characterised in that described to the described impression block and described after impressing Thin layer is lowered the temperature so that described thin layer formed Thinfilm pattern particularly as follows:
With the cooling rate less than 10 DEG C/min, the described impression block after impressing and described thin layer are lowered the temperature, so that Obtain described thin layer and form Thinfilm pattern.
Forming method the most according to claim 1, it is characterised in that described by described impression block and be formed with thin film After the described underlay substrate of pattern is separated, described method also includes:
Described impression block is carried out.
Forming method the most according to claim 9, it is characterised in that described described impression block is carried out specifically For:
Described impression block is carried out by the etching liquid using described thin layer.
11. forming methods according to claim 1, it is characterised in that described underlay substrate also includes: frame, are used for preventing Only the described thin layer of liquid flows out described underlay substrate, and the fusing point of the material of described frame is higher than described heating-up temperature.
12. 1 kinds of Thinfilm patterns, it is characterised in that the forming method of employing Thinfilm pattern described in any one of claim 1-11 Formed.
13. Thinfilm patterns according to claim 12, it is characterised in that described Thinfilm pattern is metal grating pattern, gold Belong to electrode pattern or metal line pattern.
14. 1 kinds of display devices, it is characterised in that include the Thinfilm pattern described in claim 12 or 13.
CN201610452270.5A 2016-06-21 2016-06-21 A kind of Thinfilm pattern and forming method, display device Pending CN106094426A (en)

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CN107342220A (en) * 2017-06-26 2017-11-10 云谷(固安)科技有限公司 Metal material graphic method
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US10213144B2 (en) 2016-01-25 2019-02-26 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
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CN103805920A (en) * 2014-01-23 2014-05-21 浙江大学 Metallic glass film for plastic deformation processing and preparation method of micro-component of metallic glass film

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US10213144B2 (en) 2016-01-25 2019-02-26 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
US11013437B2 (en) 2016-01-25 2021-05-25 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
US10376193B2 (en) 2016-07-25 2019-08-13 International Business Machines Corporation Embedded sacrificial layer to enhance biosensor stability and lifetime for nanopatterned electrodes
GB2571497A (en) * 2017-01-30 2019-08-28 Ibm Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
US10161898B2 (en) 2017-01-30 2018-12-25 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
US10775335B2 (en) 2017-01-30 2020-09-15 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
GB2571497B (en) * 2017-01-30 2021-05-19 Ibm Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
WO2018138624A1 (en) * 2017-01-30 2018-08-02 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
US11022577B2 (en) 2017-01-30 2021-06-01 International Business Machines Corporation Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity
US10548530B2 (en) 2017-03-01 2020-02-04 International Business Machines Corporation Biosensor calibration structure containing different sensing surface area
US11045141B2 (en) 2017-03-01 2021-06-29 International Business Machines Corporation Biosensor calibration structure containing different sensing surface area
CN107342220B (en) * 2017-06-26 2019-07-02 云谷(固安)科技有限公司 Metal material graphic method
CN107342220A (en) * 2017-06-26 2017-11-10 云谷(固安)科技有限公司 Metal material graphic method

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