CN106090383B - Gas valve-driving circuit - Google Patents

Gas valve-driving circuit Download PDF

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Publication number
CN106090383B
CN106090383B CN201610743561.XA CN201610743561A CN106090383B CN 106090383 B CN106090383 B CN 106090383B CN 201610743561 A CN201610743561 A CN 201610743561A CN 106090383 B CN106090383 B CN 106090383B
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CN
China
Prior art keywords
resistance
chip
driving
module
diode
Prior art date
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CN201610743561.XA
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Chinese (zh)
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CN106090383A (en
Inventor
黄都
张鹏
吴竞
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重庆红江机械有限责任公司
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Priority to CN201610743561.XA priority Critical patent/CN106090383B/en
Publication of CN106090383A publication Critical patent/CN106090383A/en
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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K31/00Actuating devices; Operating means; Releasing devices
    • F16K31/02Actuating devices; Operating means; Releasing devices electric; magnetic
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

The invention discloses a kind of gas valve-driving circuit, including double Boost modules, power management module, flash driving and switch tube module, the driving of low side and switch tube module, current signal collection module, hysteresis voltage comparator and microcontroller;Power management module is connected with double Boost modules;Flash drives and switch tube module is connected with double Boost modules, and low side driving and switch tube module are connected with current signal collection module;Current signal collection module is connected with the end of oppisite phase of hysteresis voltage comparator;Microcontroller is connected respectively with the positive terminal of hysteresis voltage comparator and output terminal, power management module, flash driving and switch tube module, low side driving and switch tube module.The reliability of the present invention is high, strong antijamming capability, and versatility is good.

Description

Gas valve-driving circuit
Technical field
The invention belongs to gas machine or double fuel machines, and in particular to a kind of gas valve-driving circuit.
Background technology
It is suitable with diesel engine as the gas machine of fuel or the thermal efficiency of dual fuel engine using natural gas, it can not only reduce Fuel cost can also effectively reduce pollutant emission, especially particulate emission.Compared with the liquid fuel inferior such as heavy oil, gas Fluid fuel is easier atomization and vaporization and forms combustion mixture, granular material discharged in burning to substantially reduce, and NOx emission reduces 90%, Granular material discharged almost all eliminates, and element sulphur is free of in gaseous fuel, and SOx constituent is practically free of in tail gas.Therefore, ship Purification machine need to be only used with Used in Diesel Engines gaseous fuel, ignition temperature is controlled, reduces NOx emission, you can meet state The phase III emission regulation in 2016 (IMO Tier III) of border International Maritime Organization (IMO) defined.Gas machine and dual fuel engine with The advantages that its fuel flexibility, economy and emission performance are good will be as meeting strict emission regulation and cost-effectiveness requirement from now on One of important technique measure.Gas spray valve is the critical component of gas machine or dual fuel engine, the quality of driving circuit Power performance, economic performance and the emission performance of gas machine or dual fuel engine will be directly affected.
The content of the invention
The object of the present invention is to provide a kind of reliability height, strong antijamming capability, and the gas electrohydraulic valve actuators that versatility is good Road.
Gas valve-driving circuit of the present invention including double Boost modules, power management module, flash driving and is opened Close tube module, the driving of low side and switch tube module, current signal collection module, hysteresis voltage comparator and microcontroller;
The power management module is connected with Boost modules, the voltage that the double Boost modules of power management module control generate It is adjustable in the range of 24V~150V, for controlling current rise time and providing voltage source for driving current;Power management mould Block is additionally operable to control power supply electrifying and power-off sequential, is worked with coordinating each module;
The flash driving and switch tube module and the driving of low side and switch tube module are used to control current value and perception The afterflow of load, flash driving and switch tube module are connected with double Boost modules, and low side drives and switch tube module and electric current Signal acquisition module connects;
The current signal of acquisition is converted to voltage signal and is input to hysteresis voltage ratio by the current signal collection module Compared with the end of oppisite phase of device, which is connected with the end of oppisite phase of hysteresis voltage comparator;
The microcontroller is used to export the reference voltage needed for the positive terminal of hysteresis voltage comparator, generates flash driving And switch tube module drives with low side and switchs the drive signal needed for tube module, and to the key of entire gas valve-driving circuit Data are monitored, the microcontroller respectively with the positive terminal of hysteresis voltage comparator and output terminal, power management module, flash Driving and switch tube module, low side driving and switch tube module connection;
The hysteresis voltage comparator compares the reference voltage of the voltage signal of end of oppisite phase and positive terminal, and generates Switching signal needed for microcontroller.
Further, the flash driving and switch tube module are using bootstrapping suspension driving, including flash driving and flash Switching tube Q1;
The flash driving includes chip U1, resistance R1, resistance R2, resistance R3, resistance R4, capacitance C1, capacitance C2, two poles Pipe D1, diode D2 and diode D3;
The 1 foot meridian capacitor C2 of the chip U1 is connected with 4 feet of chip U1, and 2 feet of chip U1 are through resistance R4 and chip U1 The connection of 4 feet, 5 feet of chip U1 are connected through resistance R3 with 6 feet of chip U1, and 5 feet of chip U1 are also through capacitance C1 and chip U1 The connection of 8 feet, diode D2 is in parallel with capacitance C1;Cathode of 7 feet of chip U1 respectively with diode D3 is connected, and diode D3 Anode be connected with the grid of high side switches pipe Q1;The resistance R2 is in parallel with diode D3;8 feet of chip U1 are through diode D1, resistance R1 are connected with 1 foot of chip U1;The tie point of resistance R1 and capacitance C2 meet the company of power supply VCC, resistance R4 and capacitance C2 Contact is grounded.
Further, double Boost modules include chip U2, the first Boost boosting branch and the 2nd Boost boosting branch Road;
First Boost boostings branch routing inductance L1, mos pipe Q3, resistance RSNS1, diode D4 and capacitance COUTComposition, The grid of mos pipes Q3 and the P of chip U2GATE1Foot connects, and the drain electrode of mos pipes Q3 is through inductance L1 and VINConnection, the leakage of mos pipes Q3 Pole is also through diode D4, capacitance COUTGround connection;The source electrode of mos pipes Q3 is through resistance RSNS1Ground connection, and resistance RSNS1With mos pipe Q3 source electrodes The one end being connected also meets the P of chip U2SENSE1+Foot, resistance RSNS1The other end also meet the P of chip U2SENSE1-Foot;
2nd Boost boostings branch routing inductance L2, mos pipe Q4, resistance RSNS2, diode D5 and COUTComposition, mos The grid of pipe Q4 and the P of chip U2GATE2Foot connects, and the drain electrode of mos pipes Q4 is through inductance L2 and VINConnection, the drain electrode of mos pipes Q4 is also Through diode D5, capacitance COUTGround connection, the source electrode of mos pipes Q3 is through resistance RSNS2Ground connection, and resistance RSNS2With the source electrode phase of mos pipes Q4 One end of connection also meets the P of chip U2SENSE2+Foot, resistance RSNS2The other end also meet the P of chip U2SENSE2-Foot;
First Boost boosting branch and the 2nd Boost boost branch work there are 180 ° of phase differences, first When mos pipes Q3 conductings in Boost boosting branches are inductance L1 accumulation of energys, the mos pipes Q4 shut-offs in the 2nd Boost boosting branches, By the energy that inductance L2 is stored by diode D5 to COUTIt charges;After the 180 ° of phases that work, in the 2nd Boost boosting branches Mos pipes Q4 conductings are inductance L2 accumulation of energys, and the mos pipes Q3 shut-offs of the first Boost boosting branches pass through the inductance L1 energy stored Diode D4 is to COUTIt charges.
Further, the current signal collection module includes chip U3, capacitance CBYP, capacitance CFWith resistance RF
The P1 foot meridian capacitors C of the chip U3BYPAfter be grounded, the P2 feet of chip U3 ground connection, the P3 feet of chip U3 are through resistance RF, capacitance CFGround connection, the P4 of chip U3 and the IP+ ends of gas trap connect, and the P5 feet of chip U3 and the IP- ends of gas trap connect, and adopt Collection flows through the current signal of gas trap, realizes positive, reverse current signal acquisition.
The hysteresis voltage comparator includes voltage comparator U4, resistance R5, resistance R6 and resistance R7, the voltage and compares The positive terminal of device U4 meets power supply VCC through resistance R5, and the positive terminal of voltage comparator U4 is also grounded through resistance R6, voltage comparator U4 Positive terminal voltage comparator U4 also after resistance R7 output terminal connection.
The present invention has the following advantages:
(1) output current can be flexibly adjustable as requested, and controls current rise time and control the electricity of P/H electric currents Potential source is adjustable in the range of 24V~150V, can meet most gas machines and double fuel machine gas injection high-speed electromagnetic valve Driving requirement;
(2) using binary channels two-phase booster circuit, the rate of rise and power requirement can be met;
(3) flash driving is suspended using advanced bootstrapping and driven, and with reference to the optimization design of local circuit parameter, is effectively prevented Circuit is stopped during the work time since current waveform caused by the failures such as Latch-Up and Latch-Off is abnormal, has greatly improved The functional reliability of driving circuit;
(4) current signal employs high-precision current transformer, and acquisition precision is high, strong antijamming capability;
(5) voltage comparator with hysteresis section is employed, the current signal collected compares it with reference voltage signal Afterwards, the switching signal of control flash driving is generated, so as to control driving current, the ripple value of electric current can be by adjusting hysteresis section It is controlled;
The gas spray valve of (6) 2 or 2 or more works there are angle overlap, in order to meet the requirement, devises independence Flash driving signal control circuit, the load of CPU can be effectively reduced to you;
(7) it can be controlled very well by power management module and power on/off sequential, effectively reduce the damage of lower edge switch pipe Risk.
Description of the drawings
Fig. 1 is the principle of the present invention block diagram;
Fig. 2 is flash driving and switch tube module in Fig. 1, the gas trap and connection circuit of the driving of low side and switch tube module Figure;
Fig. 3 is the circuit diagram of double Boost modules in Fig. 1;
Fig. 4 is the circuit diagram of current signal collection module in Fig. 1;
Fig. 5 is the hysteresis voltage comparator circuit figure in Fig. 1;
Fig. 6 is the hysteresis section operating diagram in Fig. 5;
Fig. 7 is to power on/off sequence diagram in the present invention;
Wherein:1st, double Boost modules, 2, power management module, 3, flash driving and switch tube module, 3a, flash driving, 4th, gas trap, 5, the driving of low side and switch tube module, 5a, the driving of low side, 6, current signal collection module, 7, hysteresis voltage compares Device, 8, microcontroller.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.
Gas valve-driving circuit as shown in Figure 1 including double Boost modules 1, power management module 2, flash driving and is opened Close tube module 3, the driving of low side and switch tube module 5, current signal collection module 6, hysteresis voltage comparator 7 and microcontroller 8. The voltage that power management module 2 controls double Boost modules 1 to generate is adjustable in the range of 24V~150V, for electric current to be controlled to rise Time and provide voltage source for driving current.Power management module 2 has control power supply electrifying and power-off sequential, can effectively assist Adjust the work of each modular circuit.The flash driving and switch tube module 3 and the driving of low side and switch tube module 5 are used to control electricity The afterflow of flow valuve and inductive load, flash driving and switch tube module 3 drive and switch the drive signal of tube module 5 with low side It is generated by microcontroller 8, flash driving and switch tube module 3 are connected with double Boost modules 1, low side driving and switch pipe die Block 5 is connected with current signal collection module 6.The current signal of acquisition is converted to voltage letter by the current signal collection module 6 Number and be input to the end of oppisite phase of hysteresis voltage comparator 7, the reverse phase of the current signal collection module 6 and hysteresis voltage comparator 7 End connection.The microcontroller 8 is used to export the reference voltage needed for the positive terminal of hysteresis voltage comparator 7, generates flash and drives Dynamic and switch tube module 3 drives with low side and switchs the drive signal needed for tube module 5, and to entire gas valve-driving circuit Critical data is monitored, the microcontroller 8 respectively with the positive terminal of hysteresis voltage comparator 7 and output terminal, power management mould Block 2, flash driving and switch tube module 3, the driving of low side and switch tube module 5 connect.The hysteresis voltage comparator 7 is by reverse phase The voltage signal at end and the reference voltage of positive terminal are compared, and generate the switching signal needed for microcontroller 8, hysteresis electricity Pressure 7 positive terminal of comparator and output terminal are connected with microcontroller 8.
As shown in Figure 1, in use, gas trap is driven and switched respectively tube module 3, the driving of low side and switching tube with flash Module 5 connects.
As shown in Fig. 2, flash driving and switch tube module 3 are suspended driving using bootstrapping, include flash driving with High side switches pipe Q1.The flash driving includes chip U1 (IR2125), resistance R1, resistance R2, resistance R3, resistance R4, capacitance C1, capacitance C2, diode D1, diode D2 and diode D3, more than each component connection relation it is as follows:
The 1 foot meridian capacitor C2 of the chip U1 is connected with 4 feet of chip U1, and 2 feet of chip U1 are through resistance R4 and chip U1 The connection of 4 feet, 5 feet of chip U1 are connected through resistance R3 with 6 feet of chip U1, and 5 feet of chip U1 are also through capacitance C1 and chip U1 The connection of 8 feet, diode D2 is in parallel with capacitance C1;Cathode of 7 feet of chip U1 respectively with diode D3 is connected, and diode D3 Anode be connected with the grid of high side switches pipe Q1;The resistance R2 is in parallel with diode D3;8 feet of chip U1 are through diode D1, resistance R1 are connected with 1 foot of chip U1;The tie point of resistance R1 and capacitance C2 meet the company of power supply VCC, resistance R4 and capacitance C2 Contact is grounded.
As shown in Fig. 2, it is described it is low while drive and switch tube module 5 include it is low while drive 5a and lower edge switch pipe Q2, low side The grid of switching tube Q2 is connected with low side driving 5a.
In use, the drain electrode of lower edge switch pipe Q2 and the drain electrode of high side switches pipe Q1 are connected with gas trap 4.Flash drives Before generating copped wave, first open lower edge switch pipe Q2, capacitance C1 (bootstrap capacitor) and pass through power supply VCC, resistance R1, diode D1, electricity Hold C1, gas trap 4, lower edge switch pipe Q2 to charge, after the voltage at capacitance C1 both ends is higher than certain value, flash driving is established by cable Begin to generate copped wave, for high side switches pipe Q1 to be driven to turn on.The effect of resistance R1 is to prevent capacitance C1 from overcharging, the work of diode D2 With being to prevent capacitance C1 both ends when overcharging from generating negative pressure, the effect of diode D3 and resistance R2 are to coordinate high side switches pipe Q1 Turn-on and turn-off speed.
As shown in figure 3, double Boost modules 1 are wanted for generating the voltage source needed for driving 4 driving current of gas trap Ask voltage high (up to 120V), power big.Double Boost modules 1 are boosted including chip U2 (model LTC3862), the first Boost Branch and the 2nd Boost boosting branches.Wherein:First Boost boostings branch routing inductance L1, mos pipe Q3, resistance RSNS1、 Diode D4 and capacitance COUTComposition, the grid of mos pipes Q3 and the P of chip U2GATE1Foot connects, and the drain electrode of mos pipes Q3 is through inductance L1 With VINConnection, the drain electrode of mos pipes Q3 is also through diode D4, capacitance COUTGround connection;The source electrode of mos pipes Q3 is through resistance RSNS1Ground connection, and Resistance RSNS1The one end being connected with mos pipe Q3 source electrodes also meets the P of chip U2SENSE1+Foot, resistance RSNS1The other end also connect chip The P of U2SENSE1- foot.2nd Boost boostings branch routing inductance L2, mos pipe Q4, resistance RSNS2, diode D5 and COUTGroup Into the grid of mos pipes Q4 and the P of chip U2GATE2Foot connects, and the drain electrode of mos pipes Q4 is through inductance L2 and VINConnection, mos pipes Q4's Drain electrode is also through diode D5, capacitance COUTGround connection, the source electrode of mos pipes Q3 is through resistance RSNS2Ground connection, and resistance RSNS2With mos pipes Q4's One end that source electrode is connected also meets the P of chip U2SENSE2+Foot, resistance RSNS2The other end also meet the P of chip U2SENSE2-Foot.
First Boost boosting branch and the 2nd Boost boost branch work there are 180 ° of phase differences, first When mos pipes Q3 conductings in Boost boosting branches are inductance L1 accumulation of energys, the mos pipes Q4 shut-offs in the 2nd Boost boosting branches, By the energy that inductance L2 is stored by diode D5 to COUTIt charges;After the 180 ° of phases that work, in the 2nd Boost boosting branches Mos pipes Q4 conductings are inductance L2 accumulation of energys, and the mos pipes Q3 shut-offs of the first Boost boosting branches pass through the inductance L1 energy stored Diode D4 is to COUTIt charges.Double Boost modules 1 can be met gas trap and be worked to high voltage, greatly using the boosting of binary channels two-phase The requirement of power.
As shown in Figure 2 and Figure 4, the current signal collection module 6 includes chip U3 (model ACS758), capacitance CBYP、 Capacitance CF, resistance RF, current signal source (current signal for flowing through the electric current of gas trap 4 shown in Fig. 2).The P1 feet of chip U3 are through electricity Hold CBYPAfter be grounded, the P2 feet of chip U3 ground connection, the P3 feet of chip U3 are through resistance RF, capacitance CFGround connection, the P4 and gas of chip U3 The IP+ ends connection of valve 4, the P5 feet of chip U3 are connected with the IP- ends of gas trap 4, are gathered the current signal of gas coming through valve, are realized Positive, reverse current signal acquisition.The primary coil of current transformer is connected with gas trap 4, when driving a current through primary side line After circle, a corresponding magnetic field is generated, this electromagnetic field is converted into the output voltage of corresponding ratio by internal hall switch, Conversion accuracy is up to 98%.Due to the structure that primary coil is galvanically isolated with output, can effectively be reduced by electrical isolation The interference that gas valve-driving circuit generates is brought into signal acquisition and feedback circuit, so as to effectively improve the essence of current control Degree.
As shown in Figure 5 and Figure 6, the hysteresis voltage comparator 7 includes voltage comparator U4, resistance R5, resistance R6 and electricity R7 is hindered, the positive terminal of the voltage comparator U4 meets power supply VCC through resistance R5, and the positive terminal of voltage comparator U4 is also through resistance R6 Ground connection, the output terminal connection of positive terminal voltage comparator U4 also after resistance R7 of voltage comparator U4.
Reversely the voltage comparator with hysteresis section needs three resistor networks (resistance R5, resistance R6 and resistance R7), when The end of oppisite phase V of voltage comparator UINValue is less than positive terminal VAWhen, it exports as high level, low pressure threshold VA1For
Work as VIN> VAWhen, it exports as low level, HVT high voltage threshold VA2For
So total hysteresis section is
ΔVA=VA1.VA2
Using external voltage comparator, the load of microprocessor 8 can be effectively reduced, is deposited for 2 or more the work of gas trap 4 It lays the foundation in angle overlap, meanwhile, setting hysteresis section, first, being effectively reduced the shadow that external disturbance controls driving current It rings, second is that the ripple of flexible modulation driving current.
As shown in fig. 7, microcontroller 8 is powered by 5V, 3.3V, 1.5V power supply ,/PORST is for controlling microcontroller It resets.In the design, influence of the power-off sequential to driving circuit is very big, during power down, if driven just at generating The period of electric current, andThe time of reset is later, and drive circuit works easily generate disorder, driving current at this time Signal is run helter-skelter, and is easy to cause lower edge switch pipe Q2 damages.The present invention, will before 5V, 3.3V, 1.5V are by power down It sets low, can effectively control power-off sequential, so as to which driving circuit be avoided the situation of work disorder occur, effectively reduce low side and open Close the risk of pipe Q2 damages.

Claims (5)

1. a kind of gas valve-driving circuit, it is characterised in that:Including double Boost modules(1), power management module(2), flash drive Dynamic and switch tube module(3), the driving of low side and switch tube module(5), current signal collection module(6), hysteresis voltage comparator (7)And microcontroller(8);
The power management module(2)With Boost modules(1)Connection, power management module(2)The double Boost modules of control(1)Production Raw voltage is adjustable in the range of 24V~150V, for controlling current rise time and providing voltage source for driving current;Electricity Source control module(2)Control power supply electrifying and power-off sequential are additionally operable to, is worked with coordinating each module;
The flash driving and switch tube module(3)Tube module is driven and switched with low side(5)For controlling current value and sense Property load afterflow, the flash driving and switch tube module(3)With double Boost modules(1)Connection, low side driving and switch pipe die Block(5)With current signal collection module(6)Connection;
The current signal collection module(6)The current signal of acquisition is converted to voltage signal and is input to hysteresis voltage and is compared Device(7)End of oppisite phase, the current signal collection module(6)With hysteresis voltage comparator(7)End of oppisite phase connection;
The microcontroller(8)For exporting hysteresis voltage comparator(7)Positive terminal needed for reference voltage, generate flash drive Dynamic and switch tube module(3)Tube module is driven and switched with low side(5)Required drive signal, and to entire gas electrohydraulic valve actuator The critical data on road is monitored, the microcontroller(8)Respectively with hysteresis voltage comparator(7)Positive terminal and output terminal, electricity Source control module(2), flash driving and switch tube module(3), the driving of low side and switch tube module(5)Connection;
The hysteresis voltage comparator(7)The reference voltage of the voltage signal of end of oppisite phase and positive terminal is compared, and is generated Microcontroller(8)Required switching signal.
2. gas valve-driving circuit according to claim 1, it is characterised in that:The flash driving and switch tube module (3)It is suspended and driven using bootstrapping, including flash driving and high side switches pipe Q1;
The flash driving includes chip U1, resistance R1, resistance R2, resistance R3, resistance R4, capacitance C1, capacitance C2, diode D1, diode D2 and diode D3;
The 1 foot meridian capacitor C2 of the chip U1 is connected with 4 feet of chip U1,4 feet of 2 feet through resistance R4 Yu chip U1 of chip U1 Connection, 5 feet of chip U1 are connected through resistance R3 with 6 feet of chip U1,8 feet of 5 feet of chip U1 also through capacitance C1 Yu chip U1 Connection, diode D2 are in parallel with capacitance C1;Cathode of 7 feet of chip U1 respectively with diode D3 is connected, and diode D3 is just Pole is connected with the grid of high side switches pipe Q1;The resistance R2 is in parallel with diode D3;8 feet of chip U1 are through diode D1, electricity Resistance R1 is connected with 1 foot of chip U1;The tie point of resistance R1 and capacitance C2 connect the tie point of power supply VCC, resistance R4 and capacitance C2 Ground connection.
3. gas valve-driving circuit according to claim 1 or 2, it is characterised in that:Double Boost modules(1)Including Chip U2, the first Boost boosting branch and the 2nd Boost boosting branches;
First Boost boostings branch routing inductance L1, mos pipe Q3, resistance RSNS1, diode D4 and capacitance COUTComposition, mos pipes The grid of Q3 and the P of chip U2GATE1Foot connects, and the drain electrode of mos pipes Q3 is through inductance L1 and VINConnection, the drain electrode of mos pipes Q3 also pass through Diode D4, capacitance COUTGround connection;The source electrode of mos pipes Q3 is through resistance RSNS1Ground connection, and resistance RSNS1It is connected with mos pipe Q3 source electrodes The one end connect also meets the P of chip U2SENSE1+Foot, resistance RSNS1The other end also meet the P of chip U2SENSE1-Foot;
2nd Boost boostings branch routing inductance L2, mos pipe Q4, resistance RSNS2, diode D5 and COUTComposition, mos pipes Q4's The P of grid and chip U2GATE2Foot connects, and the drain electrode of mos pipes Q4 is through inductance L2 and VINConnection, the drain electrode of mos pipes Q4 is also through two poles Pipe D5, capacitance COUTGround connection, the source electrode of mos pipes Q3 is through resistance RSNS2Ground connection, and resistance RSNS2It is connected with the source electrode of mos pipes Q4 One end also meet the P of chip U2SENSE2+Foot, resistance RSNS2The other end also meet the P of chip U2SENSE2-Foot;
There are 180 ° of phase differences, the first Boost liters for the work of the first Boost boosting branches and the 2nd Boost boosting branches When mos pipes Q3 conductings in pressure branch are inductance L1 accumulation of energys, the mos pipes Q4 shut-offs in the 2nd Boost boosting branches, by inductance L2 The energy of storage is by diode D5 to COUTIt charges;After the 180 ° of phases that work, the mos pipes Q4 in the 2nd Boost boosting branches is led Lead to for inductance L2 accumulation of energys, the energy that inductance L1 is stored is passed through diode D4 by the mos pipes Q3 shut-offs of the first Boost boosting branches To COUTIt charges.
4. gas valve-driving circuit according to claim 1 or 2, it is characterised in that:The current signal collection module(6) Including chip U3, capacitance CBYP, capacitance CFWith resistance RF
The P1 foot meridian capacitors C of the chip U3BYPAfter be grounded, the P2 feet of chip U3 ground connection, the P3 feet of chip U3 are through resistance RF, capacitance CFGround connection, the P4 and gas trap of chip U3(4)IP+ ends connection, the P5 feet and gas trap of chip U3(4)IP- ends connection, adopt Collection flows through gas trap(4)Current signal, realize positive, reverse current signal acquisition.
5. gas valve-driving circuit according to claim 1 or 2, it is characterised in that:The hysteresis voltage comparator(7)Bag It includes voltage comparator U4, resistance R5, resistance R6 and resistance R7, the positive terminal of the voltage comparator U4 and connects power supply through resistance R5 The positive terminal of VCC, voltage comparator U4 are also grounded through resistance R6, the positive terminal of the voltage comparator U4 voltage ratio also after resistance R7 Output terminal connection compared with device U4.
CN201610743561.XA 2016-08-26 2016-08-26 Gas valve-driving circuit CN106090383B (en)

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