CN106062959A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN106062959A
CN106062959A CN201580010008.9A CN201580010008A CN106062959A CN 106062959 A CN106062959 A CN 106062959A CN 201580010008 A CN201580010008 A CN 201580010008A CN 106062959 A CN106062959 A CN 106062959A
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subregion
igbt
injection zone
semiconductor substrate
diode
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CN106062959B (zh
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铃木刚臣
坂本正树
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Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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Abstract

本发明提供一种半导体装置的制造方法。通过向半导体基板的IGBT分区的表层部注入第1导电型的第1掺杂剂来形成第1注入区域。通过向IGBT分区的比第1注入区域更浅处的区域注入第2导电型的第2掺杂剂来形成第2注入区域。通过向二极管分区的表层部以比第2掺杂剂的浓度更高的浓度注入第1导电型的第3掺杂剂来形成非晶态的第3注入区域。其后，以使第3注入区域局部熔融且使第1掺杂剂活化的条件对IGBT分区及二极管分区进行激光退火。其后，通过用脉冲宽度较短的脉冲激光束对IGBT分区及二极管分区进行退火，从而使IGBT分区及二极管分区的整个区域中的比第2注入区域更浅处的表层部熔融并使其晶体化。根据本发明能够抑制表面产生皲裂，并且还能够使较深区域的掺杂剂活化。

Description

半导体装置的制造方法
技术领域
本发明涉及一种适于绝缘栅双极型晶体管(IGBT)及二极管形成于一张基板上的反向导通IGBT(RC-IGBT)的制造的半导体装置的制造方法。
背景技术
在下述专利文献1中公开有通过激光退火而使形成于IGBT的背面的集电区域的掺杂剂活化的方法。在该激光退火方法中，首先，向半导体基板注入第1掺杂剂，进而向比第1掺杂剂的注入深度更浅的区域注入第2掺杂剂。
之后，使用第1脉冲激光束进行激光退火以使较浅区域的第2掺杂剂活化。在该激光退火中，较深区域的第1掺杂剂不会被活化。进而，使用脉冲宽度较长的第2脉冲激光束来进行激光退火以使较深区域的第1掺杂剂活化。
以往技术文献
专利文献
专利文献1：日本特开2004-39984号公报
发明内容
发明要解决的技术课题
在使较浅区域的掺杂剂活化之后再使较深区域的掺杂剂活化的方法中，在对较深区域的掺杂剂进行活化退火时，晶格缺陷从较深区域朝向较浅区域移动。因此，晶格缺陷容易残留于较浅区域。为了防止晶格缺陷的残留，优选在使较深区域的掺杂剂活化之后再使较浅区域的掺杂剂活化。若采用该方法，则在较深区域的活化退火过程中移动至较浅区域的晶格缺陷在较浅区域的活化退火过程中几乎被消除。
在形成RC-IGBT的半导体基板上，划定有IGBT分区及二极管分区。在半导体基板背面的IGBT分区形成有集电区域及与其相比位于更深处的缓冲区域，在二极管分区形成有高浓度的n型阴极区域。若为了形成高浓度的n型阴极区域而离子注入磷，则注入区域会成为非晶态。与此相对，IGBT分区依旧保持晶态。即，在进行激光退火之前，在半导体基板的表面混合存在非晶态区域与晶态区域。
与晶态区域相比，非晶态区域除了更容易吸收激光束的能量以外，熔点也较低。若使用满足使IGBT分区内的较深区域的掺杂剂活化所需条件的脉冲激光束来进行退火，则非晶态区域的表层部会局部(以斑点状)熔融。若表层部局部熔融后固化，则导致表面皲裂。在不使非晶态区域熔融的前提下使IGBT分区内的较深区域的掺杂剂活化是困难的。
本发明的目的在于提供一种包括能够抑制表面皲裂的产生且能够使较深区域的掺杂剂活化的激光退火工序的半导体装置的制造方法。
用于解决技术课题的手段
根据本发明的第1观点提供一种半导体装置的制造方法，其具有：
工序(a)，通过向在表面划定有IGBT分区及二极管分区的半导体基板的所述IGBT分区的表层部离子注入第1导电型的第1掺杂剂来形成第1注入区域；
工序(b)，通过向所述半导体基板的所述IGBT分区的比所述第1注入区域更浅处的区域离子注入与所述第1导电型相反的第2导电型的第2掺杂剂来形成第2注入区域；
工序(c)，通过向所述半导体基板的所述二极管分区的表层部以比所述第2掺杂剂的浓度更高的浓度离子注入所述第1导电型的第3掺杂剂，使注入区域非晶化而形成第3注入区域；
工序(d)，在所述工序(a)、(b)及(c)之后，用第1脉冲激光束以使所述第3注入区域局部熔融且使所述第1注入区域的所述第1掺杂剂活化的条件扫描所述半导体基板的所述IGBT分区及所述二极管分区；及
工序(e)，在所述工序(d)之后，通过用脉冲宽度比所述第1脉冲激光束的脉冲宽度短的第2脉冲激光束扫描所述半导体基板的所述IGBT分区及所述二极管分区，使所述半导体基板的所述IGBT分区及所述二极管分区的整个区域中的比所述第2注入区域更浅处的表层部熔融并使其晶体化。
根据本发明的第2观点提供一种半导体装置的制造方法，其具有：
工序(a)，通过向在表面划定有IGBT分区及二极管分区的半导体基板的所述IGBT分区的表层部离子注入第1导电型的第1掺杂剂来形成第1注入区域；
工序(b)，用第1脉冲激光束以不使所述半导体基板的表面熔融的条件扫描所述半导体基板的所述IGBT分区及所述二极管分区，从而使所述第1注入区域的所述第1掺杂剂活化；
工序(c)，在所述工序(b)之后，通过向所述半导体基板的所述IGBT分区的比所述第1注入区域更浅处的区域离子注入与所述第1导电型相反的第2导电型的第2掺杂剂来形成第2注入区域；
工序(d)，通过向所述半导体基板的所述二极管分区的表层部以比所述第2掺杂剂的浓度更高的浓度离子注入所述第1导电型的第3掺杂剂，使注入区域非晶化而形成第3注入区域；及
工序(e)，在所述工序(c)、(d)之后，通过用脉冲宽度比所述第1脉冲激光束的脉冲宽度短的第2脉冲激光束扫描所述半导体基板的所述IGBT分区及所述二极管分区，使所述半导体基板的所述第2注入区域及所述第3注入区域的至少表层部熔融并使其晶体化，从而使所述第2掺杂剂及所述第3掺杂剂活化。
发明效果
在基于第1观点的方法中，通过工序(d)中的使用第1脉冲激光束的激光退火，有时第3注入区域局部熔融且二极管分区的表面产生皲裂。通过在工序(e)中使用第2脉冲激光束进行激光退火，在整个IGBT分区及二极管分区使表层部熔融，因此二极管分区的表面皲裂会消失。
在基于第2观点的方法中，在工序(b)中使用第1脉冲激光束来进行激光退火时，二极管分区并未被非晶化。因此，在使用第1脉冲激光束进行激光退火时，二极管分区的表层部不会熔融。因此，能够防止半导体基板的表面产生皲裂。
附图说明
图1是在实施例的半导体装置的制造方法中成为激光退火对象的半导体基板的平面图及局部放大图。
图2是形成有IGBT及二极管的状态的图1的点划线2-2处的剖视图。
图3是在实施例的半导体装置的制造方法中使用的激光退火装置的示意图。
图4A及图4B是实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图4C及图4D是实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图4E及图4F是实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图4G是实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图5A及图5B是另一实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图5C及图5D是图5A及图5B所示的实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图5E及图5F是图5A及图5B所示的实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
图5G是图5A及图5B所示的实施例的半导体装置的制造方法的制造过程中的半导体装置的局部剖视图。
具体实施方式
图1中示出了在实施例的半导体装置的制造方法中成为激光退火对象的半导体基板10的平面图及局部放大图。在半导体基板10的表面划定有IGBT分区11及二极管分区12。在IGBT分区11形成IGBT，在二极管分区12形成二极管。
图2中示出了形成有IGBT及二极管的状态的在图1的点划线2-2处的剖视图。
对IGBT分区11的结构进行说明。在由n型硅构成的半导体基板10的第1面13形成有包括p型基极区域15、n型发射极区域16、栅电极17、栅极绝缘膜18及发射电极19的元件结构。在半导体基板10的与第1面13相反一侧的第2面14的表层部形成有p型集电区域20及n型缓冲区域21。缓冲区域21配置于比集电区域20更深的位置。在集电区域20的表面形成有集电极22。作为半导体基板10通常使用单晶硅基板。并且，通过栅极-发射极之间的电压能够进行电流的导通/切断控制。
从第2面14至集电区域20与缓冲区域21的界面为止的深度例如在约0.3μm～0.5μm的范围内。从第2面14至缓冲区域21的最深位置为止的深度例如在1μm～10μm的范围内。
接着，对二极管分区12的结构进行说明。在半导体基板10的第1面13的表层部形成有p型阳极区域25。在第2面14的表层部形成有n型阴极区域26。阳极区域25的深度与基极区域15的深度相同。阴极区域26位于比缓冲区域21更浅处。在第1面13形成有阳极电极27，在第2面14形成有阴极电极28。
图3中示出了实施例的半导体装置的制造方法中使用的激光退火装置的示意图。该激光退火装置包括第1激光光源41、第2激光光源31、传播光学系统47、载物台48及控制装置49。第2激光光源31包括固体激光振荡器31A和固体激光振荡器31B。固体激光振荡器31A和固体激光振荡器31B输出具有绿光区域波长的第2脉冲激光束。固体激光振荡器31A和固体激光振荡器31B使用例如输出两次以上的高次谐波的Nd:YAG激光器、Nd:YLF激光器、Nd:YVO4激光器等。另外，也可以使用输出具有从紫外线至绿光为止的波长区域的波长的激光束的激光振荡器，从而代替固体激光振荡器31A和固体激光振荡器31B。作为输出紫外线区域的激光束的激光振荡器可例举出准分子激光器。第1激光光源41例如使用半导体激光振荡器，第1激光光源41例如输出波长为808nm的第1脉冲激光束。另外，也可以使用输出波长为950nm以下的第1脉冲激光束的半导体激光振荡器。
作为半导体激光振荡器，使用将多个激光二极管二维阵列的激光二极管阵列。以下，对激光二极管阵列的结构进行说明。多个激光二极管以单片状一维阵列而构成激光棒。通过堆叠多个激光棒，构成二维阵列的激光二极管阵列。将构成激光棒的多个激光二极管所排列的方向称作慢轴。将多个激光棒堆叠的方向称作快轴。每个激光棒均配置有柱面透镜。柱面透镜将从激光棒输出的激光束在快轴方向上、或者快轴方向及慢轴方向这两个方向上进行准直。
从第1激光光源41输出的第1脉冲激光束及从第2激光光源31输出的第2脉冲激光束经由传播光学系统47入射到退火对象的半导体基板10。从第1激光光源41输出的第1脉冲激光束及从第2激光光源31输出的第2脉冲激光束入射到半导体基板10表面的同一区域。
接着，对传播光学系统47的结构及作用进行说明。从第1激光光源41输出的第1脉冲激光束经由衰减器42、光束扩展器43、柱面透镜阵列组44、分光镜45及聚光透镜46而入射于半导体基板10。
从固体激光振荡器31A输出的第2脉冲激光束经由衰减器32A及光束扩展器33A而入射于光束分离器35。从固体激光振荡器31B输出的第2脉冲激光束经由衰减器32B、光束扩展器33B、反射镜34而入射于光束分离器35。从固体激光振荡器31A和固体激光振荡器31B这两个固体激光振荡器输出的第2脉冲激光束在光束分离器35汇合，并沿着共同路径传播。
在光束分离器35汇合于1条路径上的第2脉冲激光束经由柱面透镜阵列组36、折射镜37、分光镜45及聚光透镜46入射到半导体基板10。
光束扩展器43、33A、33B对入射的激光束进行准直，并且扩大光束直径。柱面透镜阵列组44、36及聚光透镜46将半导体基板10表面上的光束截面整形成长条状，并且使光束分布(光强度分布)均匀化。从第1激光光源41输出的第1脉冲激光束与从第2激光光源31输出的第2脉冲激光束入射到半导体基板10表面的几乎相同的长条区域。柱面透镜阵列组44及聚光透镜46作为从第1激光光源41输出的第1脉冲激光束用的均化器而发挥功能，柱面透镜阵列组36及聚光透镜46作为从第2激光光源31输出的第2脉冲激光束用的均化器而发挥功能。
半导体基板10保持于载物台48。定义将与半导体基板10的表面平行的面作为XY面且将半导体基板10表面的法线方向作为Z方向的XYZ直角坐标系。载物台48受到控制装置49的控制，使半导体基板10沿X方向及Y方向移动。控制装置49向固体激光振荡器31A和固体激光振荡器31B发送触发信号。固体激光振荡器31A和固体激光振荡器31B接收来自控制装置49的触发信号，并与此同步输出第2脉冲激光束。并且，控制装置49控制从第1激光光源41输出的第1脉冲激光束的输出时机及脉冲宽度。
参考图4A～图4G，对实施例的半导体装置的制造方法进行说明。图4A～图4G表示制造过程中的半导体装置的局部剖视图。
如图4A所示，在半导体基板10的IGBT分区11的第1面13形成有包括基极区域15、发射极区域16、栅电极17及栅极绝缘膜18的元件结构。在二极管分区12的第1面13形成有阳极区域25。阳极区域25及基极区域15的掺杂剂在同一离子注入工序中被注入。
通过向IGBT分区11的第2面14的表层部离子注入磷(P)(第1掺杂剂)，形成成为缓冲区域21(图2)的第1注入区域21a。通过离子注入，在第1注入区域21a内形成有晶格缺陷50。
如图4B所示，通过向IGBT分区11的第2面14的表层部离子注入硼(B)(第2掺杂剂)，形成成为集电区域20(图2)的第2注入区域20a。第2注入区域20a位于比第1注入区域21a更浅处。在第2注入区域20a内也形成有晶格缺陷50。
如图4C所示，通过向二极管分区12的第2面14的表层部离子注入磷(第3掺杂剂)，形成成为阴极区域26(图2)的第3注入区域26a。第3注入区域26a的磷浓度高于第1注入区域21a的磷浓度及第2注入区域20a的硼浓度。通过将比硼更重的磷离子注入成高浓度，第3注入区域26a成为非晶态。
如图4D所示，用第1脉冲激光束55来扫描半导体基板10的IGBT分区11及二极管分区12。第1脉冲激光束55是从第1激光光源41(图3)输出的脉冲激光束。第1脉冲激光束55的脉冲宽度为10μs～20μs，在半导体基板10表面的脉冲能量密度为4J/cm2～7J/cm2。在扫描方向上的重叠率为50％～75％。在将扫描方向上的光束截面的宽度表示为Wt，且将在时间轴上彼此相邻的两次脉冲激光束的光束截面所重叠的部分的宽度表示为Wo时，重叠率定义为Wo/Wt。
在上述激光退火条件下，晶态的IGBT分区11不会熔融，但是非晶态的二极管分区12的第3注入区域26a则局部(以斑点状)熔融。
图4E中示出了利用第1脉冲激光束55进行了激光退火之后的半导体基板10的剖视图。在IGBT分区11中，在第1注入区域21a及第2注入区域20a(图4B)产生固相生长，因此离子注入的磷及硼被活化，形成缓冲区域21及集电区域20。此时，晶格缺陷50向较浅区域移动。
在二极管分区12，由于局部熔融的第3注入区域26a被固化，因此其表面产生皲裂。若为了活化较深的缓冲区域21而优化退火条件，则会导致非晶态的第3注入区域26a的表层部局部熔融。若以不使第3注入区域26a熔融的条件进行退火，则很难充分地活化较深的缓冲区域21。换言之，在实施例中，允许因用于活化缓冲区域21的激光退火而在二极管分区12表面产生皲裂。
如图4F所示，用第2脉冲激光束56扫描半导体基板10的IGBT分区11及二极管分区12。第2脉冲激光束56是从第2激光光源31(图3)输出的脉冲激光束。从固体激光振荡器31A和固体激光振荡器31B(图3)这两个固体激光振荡器输出的两个激光脉冲的脉冲宽度分别为0.1μs～0.25μs，从先前的激光脉冲的入射至后续的激光脉冲的入射之间的延迟时间为0.3μs～1μs。两个激光脉冲的脉冲能量密度分别为0.8J/cm2～2.2J/cm2。在扫描方向上的重叠率为50％～80％。另外，在本实施例中，采用了以极短的延迟时间使两个激光脉冲入射到半导体基板10的方法，但是，也可以采用使一个激光脉冲入射的方法。
在上述激光退火条件下，较浅的集电区域20及第3注入区域26a熔融。另外，在该条件下，由于无法充分地加热至半导体基板10的较深的缓冲区域21，因此无法使第1注入区域21a(图4B)内的掺杂剂充分地活化。在实施例中，通过基于第1脉冲激光束55的激光退火(图4D)，第1注入区域21a内的掺杂剂已被活化。由此，在图4F所示的使用第2脉冲激光束56进行激光退火时，无需使较深的第1注入区域21a(图4B)内的掺杂剂活化。
图4G中示出了用第2脉冲激光束56进行了激光退火之后的半导体基板10的剖视图。由于第3注入区域26a(图4F)熔融之后晶体化(固化)，因此第3掺杂剂被活化，形成阴极区域26。而且，由于集电区域20熔融之后晶体化，因此晶格缺陷50(图4D)几乎被消除。
在基于第2脉冲激光束56的激光退火中，熔融至非晶态的第3注入区域26a(图4F)与半导体基板10的单晶区域之间的边界。晶体从该边界外延生长，因此能够提高阴极区域26的结晶性，能够消除其表面的皲裂。
在上述实施例中，通过使用第1脉冲激光束55(图4D)而进行的激光退火，能够使较深的第1注入区域21a内的第1掺杂剂活化。而且，通过基于第2脉冲激光束56(图4F)的激光退火，能够消除二极管分区12的表面皲裂。脉冲宽度相对较长且脉冲能量密度相对较低的第1脉冲激光束55适于对较深区域的活化退火。相反，脉冲宽度相对较短且脉冲能量密度相对较高的第2脉冲激光束56适于对较浅区域的活化退火。由于第2脉冲激光束56的脉冲宽度较短，因此即使将第2面14(图4F)加热至熔点以上，也能够抑制第1面13的温度上升。由此，不会损伤形成于第1面13的IGBT的元件结构就能够对第2面14的表层部进行退火。
接着，参考图5A～图5G，对另一实施例的半导体装置的制造方法进行说明。图5A～图5G表示制造过程中的半导体装置的局部剖视图。
如图5A所示，在半导体基板10的第1面13形成有IGBT的元件结构及阳极区域25。通过向IGBT分区11的第2面14的表层部离子注入磷(第1掺杂剂)，形成第1注入区域21a。在第1注入区域21a形成有晶格缺陷50。
如图5B所示，用第1脉冲激光束55来扫描半导体基板10的IGBT分区11及二极管分区12。该退火条件与图4D所示的基于第1脉冲激光束55的退火条件相同。通过该激光退火，第1注入区域21a内的第1掺杂剂被活化。由于在该阶段中二极管区域12不会被非晶化，因此二极管分区12的表层部不会熔融。
图5C中示出用第1脉冲激光束55进行了激光退火后的半导体基板10的剖视图。第1注入区域21a(图5B)内的第1掺杂剂被活化而形成缓冲区域21。晶格缺陷50从缓冲区域21的较深区域向较浅区域移动。在二极管分区12的表面并未产生皲裂。
如图5D所示，通过向IGBT分区11的表层部离子注入硼(第2掺杂剂)，形成第2注入区域20a。第2注入区域20a位于比缓冲区域21更浅处。在第2注入区域20a内残留有晶格缺陷50。
如图5E所示，通过向二极管分区12的表层部离子注入磷(第3掺杂剂)，形成第3注入区域26a。第3注入区域26a成为非晶态。
如图5F所示，用第2脉冲激光束56来扫描半导体基板10的IGBT分区11及二极管分区12。该退火条件与图4F所示的基于第2脉冲激光束56的激光退火条件相同。通过基于第2脉冲激光束56的激光退火，第2注入区域20a及第3注入区域26a熔融。
图5G中示出用第2脉冲激光束56进行了激光退火之后的半导体基板10的剖视图。由于第3注入区域26a(图5F)熔融之后晶体化，因此第3掺杂剂被活化，形成阴极区域26。而且，由于第2注入区域20a(图5F)熔融之后晶体化，因此第2掺杂剂被活化，形成集极区域20。第2注入区域20a内的晶格缺陷50(图5F)几乎被消除。
在图5A～图5G所示的实施例中，通过使用第1脉冲激光束55(图5B)而进行的激光退火，能够使较深的第1注入区域21a内的掺杂剂活化。而且，在使用第2脉冲激光束56而进行的激光退火中，由于半导体基板10的整个表层部熔融，因此不会产生因斑点状熔融而引起的表面皲裂。
以上，根据实施例对本发明进行了说明，但本发明并不限定于此。例如，可进行各种变更、改良、组合等，这对本领域技术人员而言是显而易见的。
符号说明
10-半导体基板，11-IGBT分区，12-二极管分区，13-第1面，14-第2面，15-p型基极区域，16-n型发射极区域，17-栅电极，18-栅极绝缘膜，19-发射电极，20-p型集电区域，20a-第2注入区域，21-n型缓冲区域，21a-第1注入区域，22-集电极，25-阳极区域，26-阴极区域，26a-第3注入区域，27-阳极电极，28-阴极电极，31-第2激光光源，31A、31B-固体激光振荡器，32A、32B-衰减器，33A、33B-光束扩展器，34-反射镜，35-光束分离器，36-柱面透镜阵列组，37-折射镜，41-第1激光光源，42-衰减器，43-光束扩展器，44-柱面透镜阵列组，45-分光镜，46-聚光透镜，47-传播光学系统，48-载物台，49-控制装置，50-晶格缺陷，55-第1脉冲激光束，56-第2脉冲激光束。

Claims (5)

1.一种半导体装置的制造方法，其特征在于，具有：
工序(a)，通过向在表面划定有IGBT分区及二极管分区的半导体基板的所述IGBT分区的表层部离子注入第1导电型的第1掺杂剂来形成第1注入区域；
工序(b)，通过向所述半导体基板的所述IGBT分区的比所述第1注入区域更浅处的区域离子注入与所述第1导电型相反的第2导电型的第2掺杂剂来形成第2注入区域；
工序(c)，通过向所述半导体基板的所述二极管分区的表层部以比所述第2掺杂剂的浓度更高的浓度离子注入所述第1导电型的第3掺杂剂，使注入区域非晶化而形成第3注入区域；
工序(d)，在所述工序(a)、(b)及(c)之后，用第1脉冲激光束以使所述第3注入区域局部熔融且使所述第1注入区域的所述第1掺杂剂活化的条件扫描所述半导体基板的所述IGBT分区及所述二极管分区；及
工序(e)，在所述工序(d)之后，通过用脉冲宽度比所述第1脉冲激光束的脉冲宽度短的第2脉冲激光束扫描所述半导体基板的所述IGBT分区及所述二极管分区，使所述半导体基板的所述IGBT分区及所述二极管分区的整个区域中的比所述第2注入区域更浅处的表层部熔融并使其晶体化。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述工序(d)中，用所述第1脉冲激光束以不使所述半导体基板的所述IGBT分区熔融的条件扫描所述半导体基板的所述IGBT分区及所述二极管分区。
3.根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
在所述工序(c)中形成的所述第3注入区域位于比在所述工序(a)中形成的所述第1注入区域更浅处。
4.一种半导体装置的制造方法，其特征在于，具有：
工序(a)，通过向在表面划定有IGBT分区及二极管分区的半导体基板的所述IGBT分区的表层部离子注入第1导电型的第1掺杂剂来形成第1注入区域；
工序(b)，用第1脉冲激光束以不使所述半导体基板的表面熔融的条件扫描所述半导体基板的所述IGBT分区及所述二极管分区，从而使所述第1注入区域的所述第1掺杂剂活化；
工序(c)，在所述工序(b)之后，通过向所述半导体基板的所述IGBT分区的比所述第1注入区域更浅处的区域离子注入与所述第1导电型相反的第2导电型的第2掺杂剂来形成第2注入区域；
工序(d)，通过向所述半导体基板的所述二极管分区的表层部以比所述第2掺杂剂的浓度更高的浓度离子注入所述第1导电型的第3掺杂剂，使注入区域非晶化而形成第3注入区域；及
工序(e)，在所述工序(c)、(d)之后，通过用脉冲宽度比所述第1脉冲激光束的脉冲宽度短的第2脉冲激光束扫描所述半导体基板的所述IGBT分区及所述二极管分区，使所述半导体基板的所述第2注入区域及所述第3注入区域的至少表层部熔融并使其晶体化，从而使所述第2掺杂剂及所述第3掺杂剂活化。
5.根据权利要求4所述的半导体装置的制造方法，其特征在于，
所述工序(b)中使用的所述第1脉冲激光束以能够使在所述工序(d)中形成的被非晶化的所述第3注入区域的至少表层部熔融的条件扫描所述半导体基板。
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