CN106055517A - Energy-saving low-crosstalk CMOS Terahertz I/O with surface wave interconnection and surface wave modulator - Google Patents
Energy-saving low-crosstalk CMOS Terahertz I/O with surface wave interconnection and surface wave modulator Download PDFInfo
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Abstract
The invention brings forward an energy-saving low-crosstalk CMOS Terahertz I/O with surface wave interconnection and a surface wave modulator. The energy-saving low-crosstalk CMOS Terahertz I/O comprises a Terahertz surface wave passive device, i.e., comprising a transmission line, a modulator, a coupler and a Terahertz on-chip surface wave transceiving system based on the surface wave passive device. The basic transmission mode of the transmission line is surface plasmon polariton (SPP), and the transmission line structurally comprises a thin-layer metal line and a series of periodic projection arrays. Therefore, electromagnetic waves confined to a surface are restricted to a periodic projection structure of the transmission line and are spread. Due to a field local area feature, when two surface wave transmission lines are arranged in a back-to-back manner, crosstalk between channels is reduced. The modulator is changed from a double-layer split-ring-resonator (SRR) structure. A MOS transistor is employed structurally as a switch and is connected with an inner ring of the structure of the SRR unit. The passive surface wave modulator does not consume static-state DC power. The energy-saving low-crosstalk CMOS Terahertz I/O provided by the scheme has the advantages of high-rate transmission and low power consumption.
Description
Technical field
The invention belongs to THz communication technology field, be specifically related to a kind of with surface wave interconnection and surface wave manipulator
Energy-conservation low crosstalk CMOS Terahertz I/O.
Background technology
Following high-performance computer needs to do broadband high-speed communication between microprocessor and internal memory.In order to realize with
The network-on-chip (NoC) of 1000 kernels, on this sheet, I/O needs to provide ultra broadband to support the super of low-power consumption (< 1pJ/bit/mm)
High rate communication (> 10Gbps).
RF-interconnection (RF-Interconnect) is a kind of way realizing above-mentioned chip-on communication.The method has low delay
Feature (M.C-.F.Chang., et al, " CMP network-on-chip overlaid with multi-with high bandwidth
band RF-interconnect”,IEEE 14th Int.Symp.on High Performance Computer
Architecture(HPCA),pp.191–202,2008.).With tradition base band upload defeated voltage signal (Y.Liu,
P.Hsieh,S.Kim,J.Seo,R.Montoye,L.Chang,J.Tierno,and D.Friedman,“A 0.1pJ/b 5-
10Gb/s Charge-Recycling Stacked Low-Power I/O for On-Chip Signaling in 45-nm
CMOS SOI,”IEEE International Solid-State Circuits Conference(ISSCC),pp.400-
401, February 2013.) mode is different, and RF-I is substantially to transmit electromagnetic wave on the transmission line." 0 " and " 1 " signal can
To be distinguished by simple ASK modulation mode.Compared with optical interconnection I/O communication on the sheet of optical band, owning on RF-I
Module fully integrated on CMOS chip and current carrier frequency can support millimeter wave band and terahertz wave band
(Y.Shang,et.al.,"A 127-140GHz Injection-locked Signal Source with 3.5mW Peak
Output Power by Zero-phase Coupled Oscillator Network in 65nm CMOS,"IEEE
CICC,Sep2014.).Compared with baseband communication on sheet, the multi-channel RF-I being recently proposed has broader bandwidth availability ratio
(B.Kim,et al.,“A 10-Gb/s compact low-power serial I/O with DFE-IIR
equalization in 65-nm CMOS,”IEEE J.Solid-State Circuits,vol.44,no.12,pp.3526–
3538,Dec.2009.).But, on the sheet designed with CMOS BEOL when designing RF-I, transmission line is generally of fine
Away from and be narrower thin layer, thus cause the highest channel Insertion Loss and the stronger electromagnetic field string of interchannel
Disturb.Meanwhile, in order to also ensure that the relatively low bit error rate (BER) while realizing high rate data transmission, Terahertz communication on sheet
Transfer rate can be further restricted due to the low extinctivity (or on/off ratio) of high band sheet modulator.
At present, similar with this programme technology has millimeter wave band based on RF-Interconnect (RF-I) (60GHz)
I/O transceiver architecture.Compared to baseband I/O communication plan, the program has following characteristics: 1) communication efficiency is higher, circuit design
Simply；2) there is low delay, can reset, multidirectional transmission characteristic；3) compared to base band transmission, the bandwidth of interconnection is had higher by RF-I
Utilization rate.
But, the millimeter wave band transceiver architecture of tradition RF-Interconnect scheme there is also following shortcoming: 1) sheet
Upper tradition transmission line is big in high band loss, and transmission range is little；3) manipulator (Push Pull Driver) used consumes
DC power；3) on tradition sheet, transmission line crosstalk is higher；4) this manipulator is big in terahertz wave band loss, and switch rate is low；5) base
Low in high band even summation efficiency in λ/4 bonder of transmission line.
Additionally, RF-I I/O can communicate with multi-carrier mode in the way of using frequency division multiple access, improve letter further
Road total bandwidth.But owing to there is strong crosstalk phenomenon between dense interconnection lines on millimeter wave or higher frequency section sheet, this communication mode
Lifting to efficiency and speed has limited.
Summary of the invention
Goal of the invention: there is again the use of high information throughput, low error rate in order to realize ultrahigh speed, fully integratedization simultaneously
Wire communication between microprocessor to internal memory, the present invention proposes a kind of Terahertz (THz) based on surface wave transmission mechanism
Sheet upper surface ripple IO receive-transmit system.By utilizing the high electric field of surface wave transmission mode to fetter effect, THz wave can be suppressed
Approach effect and the radiation effect of Duan Changjian thus reduce electromagnetic transmission loss, and use mass producible completely compatible
CMOS surface plasma receive-transmit system, increases communication distance, reduces system power dissipation while speed.By using based on surface
The Terahertz transceiving device (including transmission line, manipulator and bonder) of ripple transmission, can reduce the loss of electromagnetic wave propagation.
Meanwhile, relative to existing such as backplane communication or the receive-transmit system of RF-interconnect, it is operated in the table of terahertz wave band
Face ripple receive-transmit system need not phaselocked loop and clock recovery circuitry, has bigger communication bandwidth simultaneously, therefore reduces and is
System power consumption and area, and handling capacity and the transmission speed of data can be improved.
Present disclosure can be divided into two parts: (1) Terahertz surface wave passive device, including transmission line, manipulator with
And bonder；(2) Terahertz sheet upper surface ripple receive-transmit system based on surface wave passive device.
Passive device on Terahertz sheet based on surface wave transmission, including: surface wave transmission line, based on split-ring-
The surface wave manipulator of resonator (SRR), and surface wave bonder.Surface wave transmission line is as channel and surface wave coupling
The top layer copper metal of clutch is connected, and the other end of surface wave bonder is connected with surface wave manipulator.Wherein surface wave coupling
Device comprises bonder itself and surface wave transmission line, and when surface wave is propagated on the transmission line, bonder is with the shape of surface wave
Formula by electromagnetic wave from a certain layer transmission line coupling to another layer surface wave transmission line.
This surface wave transmission line uses 65 nanometer CMOS process developments.(metal thickness is to use the superiors layers of copper metal OI
3.3 microns) as metal level, as shown in Fig. 2 (a), for periodic dressing structure.Field based on this dressing structure local is special
Property, the electromagnetic wave at this transmission above-the-line promotion exists with surface wave forms, and electric field can be strapped in the middle of periodic projection,
Thus reduce the radiation loss of electromagnetic transmission.Period pitch d of this transmission line elects 15 μm as, much smaller than operation wavelength (λ ≈
2mm), and the wide w of main line is 5 μm.This selection of dimension is applicable to the frequency application more than 100GHz.
The ground level of described surface wave transmission line and surface wave bonder can be made up of bottom copper metal M1.Limited
In producer's design rule, this ground level needs make network structure and meet the metal density requirements of design rule needs.
The present invention designs a passive surface wave manipulator for Terahertz chip-on communication simultaneously.In order at Terahertz
Wave band designs the manipulator of a compact conformation, and the present invention proposes one based on two-layer split-ring-resonator (SRR)
Resonator structure (Y.Shang, et al, " High-sensitivity CMOS Super-regenerative Receiver
with Quench-controlled High-Q Metamaterial Resonator for Millimeter-wave
Imaging at 96and 135GHz”,IEEE Trans.Microw.Theory Techn,vol.62,no.12,pp.3095-
3106, Dec 2014.), as shown in Figure 4.The cellular construction of SRR uses two-layer top layer copper metal (OI and EA), and four MOS open
Close the internal ring opening part being connected to two SRR unit.The grid of MOS switch is modulated by high-speed digital signal.Brilliant by configuring MOS
The on off state of body pipe, the magnetic resonance frequencies of SRR will be with the state of switch and shifts, and so can realize carrier wave letter
Number modulation.
Fig. 4 give Insertion Loss simulation result under 65 nanometer CMOS process lower surface ripple SRR manipulators are in open state with
And the isolation under off status.The area of this manipulator is 40 μ m 67 μm.The design of this manipulator employs top
Copper metal OI and EA, has 3.3 μm and 1.2 μm respectively.Use thick metal can significantly improve the quality factor of SRR manipulator.Emulation
Result is as shown in Figure 4.Visible, this surface wave SRR manipulator Insertion Loss under open state is 5dB, and maximum under off status
Isolation is 28dB, is positioned at 149GHz.The extinctivity of available 23dB under this frequency.This numerical value of terahertz wave band be difficult to by
Obtain based on mos transistor switch manipulator.The bandwidth of Terahertz manipulator can be defined as when extinctivity amplitude is more than 13dB
The frequency range that covered (S.Hu, Y.-Z.Xiong, B.Zhang, L.Wang, T.-G.Lim, M.Je, and M.Madihian,
“A SiGe BiCMOS transmitter/receiver chipset with on-chip SIW antennas for
Terahertz applications,”IEEE J.Solid-State Circuits,vol.47,no.11,pp.2654–
2664,2012.)。
Terahertz surface wave bonder designed by the present invention uses metal OI and the LB design of top, such as Fig. 3 (b) institute
Show.It is imitative that Fig. 3 (c) gives in this surface wave bonder of terahertz wave band and conventional transmission line bonder (being double-channel)
The comparison of the true coefficient of coup.Can obtain when each port is satisfied by impedance matching, surface wave bonder obtains at 140GHz
Than conventional transmission line bonder 3dB or the higher coefficient of coup.
140GHz surface wave I/O transmitter architecture: at terahertz wave band, surface wave turns TEM ripple (or TEM ripple conversion table
Face ripple) transducer can design under standard 65 nanometer CMOS process and have less size.Notice designed too
Hertz interconnection or Terahertz manipulator all can be connected with transducer easily then with other sheet upper module, such as Terahertz
Source is connected.Therefore, this surface wave two-way communication I/O transceiver uses 65 nanometer CMOS process developments, and operating frequency is
140GHz.In this design, multichannel is made up of surface wave interconnection line, and line length is 20mm, and channel separation is 2.4 μm.This spacing
It it is the top-level metallic spacing of the minimum that 65nm CMOS technology can be provided by.At 140GHz, the relative bandwidth of given 15% is (nearly
20GHz), if the input noise index of demodulator (low-converter) is 10dB, and the balun of receptor input (single-ended turn pair
End) there is 3dB Insertion Loss, link analysis can obtain the minimum input signal power that transceiver end can be detected by is-30dBm.The most right
The noise immunity of 17dB is had more than in the bit error rate this Terahertz I/O realizing being less than.Fig. 5 show in particular in 65nm CMOS work
Transceiver design under skill.Wherein transmitter includes 70GHz this locality base frequency oscillation device, and a push-push frequency is taken advantage of again
Device, a further level and Terahertz manipulator.
The signal transmission work of receive-transmit system based on Terahertz surface wave can be divided into three steps: firstly the need of on sheet
Generate the signal source of 140GHz.This signal source is as the carrier wave providing transmitter to transmit data, and is connected with surface wave manipulator.
This carrier wave gives manipulator output signal incessantly, and manipulator is 0 or 1 to judge output amplitude according to input data.Such as,
If data are 1, manipulator is output as primary carrier signal, if data are 0, is output as 0V.So that the output frequency of signal source
Rate is mated with manipulator optimal working point, and the frequency of signal source must continuously adjustabe.Surface wave I/O work second stage be by
Data give channel.The TEM ripple that this stage needs a transducer signal source to be produced is converted into surface wave, and this transducer can
Obtain with the degree of depth by being incrementally increased periodically dressing projection.TEM ripple will change into surface wave and give manipulator subsequently
Launch signal.3rd working stage of surface wave I/O is the reception of signal.Surface wave passes through surface wave transmission line channel transmission
After receiving terminal, also need, by transducer, surface wave is converted into TEM ripple and carry out signal processing for subsequent module, conversion
Method can be to be gradually lowered periodically dressing nub depth to obtain.Change complete after, TEM mode still maintains output
The information of end signal amplitude, therefore can be filtered carrier signal by lower mixing action and be changed by baseband amplifier subsequently
Become the binary signal output of full swing.
The design of surface wave transmission line is as follows:
1) after determining carrier frequency, dispersion relation the periodically dressing bulge-structure degree of depth is calculated.
2) width that main line is wide is chosen for when nub depth is 0 when transmission line at the carrier frequencies and can match 50 Europe
Live width required during nurse impedance.
3) the minimum metal spacing that the spacing of usual dressing structure is allowed by technique.
4) if top aluminium lamination metal relatively thin (such as much smaller than the thickness of copper metal), then the copper metal of the superiors is used
Wiring.
5) when needs are by time placed side by side for many root surface ripple transmission line, and the aspectant part of metal need not design dressing knot
Structure, is therefore monolateral dressing structure.
6) considering TEM wave direction surface wave conversion (vice versa), the degree of depth of periodic dressing structure has only to slowly increase
Add (reduction).
7) emulation of surface wave transmission line can realize in electromagnetic simulation software such as HFSS, subsequently its overall Layout
Derived by gds file and integrated with device on other sheets.
Signal processing based on Terahertz surface wave transceiver is as follows:
1) power-up initializing transmitter makes oscillator operation and observes output frequency；
2) it is made to fall into the work of surface wave manipulator by the Voltage Cortrol oscillator output frequencies on regulation tunable capacitor
Make scope.
3) data (25Gb/s) are sent into transmission in chip.
4) by surface wave data receiver and be converted into TEM mode.
5) high frequency waves of TEM mode are downconverted into baseband signal.
6) baseband signal is amplified to full swing (such as: 0 arrives 1.2V) by what buffer amplifier.
Wherein, the regulation process of agitator is as follows:
1) supply voltage is slowly increased to 1.2V from 0V, observes the output frequency of agitator with audiofrequency spectrometer.
2) S parameter of open and closed lower surface wave modulator is obtained with audiofrequency spectrometer.
3) difference of S21 under gauging surface wave modulator open and closed.Frequency when determining or take maximum.
4) its operating frequency is transferred to above-mentioned difference maximum (coarse adjustment) by adjusting the voltage-controlled voltage of agitator.
5) high-speed data is sent into chip, observe transmitting terminal eye pattern, the voltage-controlled electricity of fine tuning agitator with oscillograph or JBERT
Straightening is best to eye pattern.
Owing to being operated in high band, need between modules to make suitable impedance matching.Usual surface wave transmission line
After changing, input and output impedance is 50 ohm, and therefore the transmitting terminal of transmitter and the input of receiver are also required to coupling
Impedance is prevented to 50 ohm.
Beneficial effect
The main advantage using non-coherent modulation is that its system structure is relatively easy because need not frequency synthesizer, because of
This can significantly reduce the power consumption of system.Fig. 5 (a) gives the bit error rate (BER) and the signal to noise ratio (SNR) of different modulating mode
Relation.By contrast, although other coherent modulation mode, as BPSK needs only to the signal to noise ratio of 14dB to realize same mistake
Code check, it needs the terahertz wave band Low phase noise frequency synthesizer of complexity and high power consumption.
With document (B.Kim, et al., " A 10-Gb/s compact low-power serial I/O with DFE-
IIR equalization in 65-nm CMOS,”IEEE J.Solid-State Circuits,vol.44,no.12,
Pp.3526 3538, Dec.2009.) compare, the surface wave I/O proposed has the inter-channel crosstalk of 10dB or lower, thus leads
Cause the improved efficiency more than 196%.Additionally, in the case of there is no clock and data recovery circuit, only carried out by DFE mode
The method of equilibrium is difficult to data transfer rate (M.H.Nazari and A.Emami-Neyestanak, " the A 15-supported more than 20Gbps
Gb/s0.5-mW/Gbps two-tap DFE receiver with far-end crosstalk cancellation,”
IEEE J.Solid-State Circuits,vol.47,no.10,pp.2420–2432,Oct.2012).Notice, proposed
Transceiver total power consumption be only 8mW, (G.Byun, Y.Kim, J.Kim, S.W.Tam, and M.-lower than other RF-I power consumption
C F.Chang,“An energy efficient and high-speed mobile memory I/O interface
using simultaneous bi-directional dual(base+RF)-band signaling,”IEEE J.Solid-
State Circuits,vol.47,no.1,pp.1–14,Jan.2012).It is also noted that the efficiency of this surface wave I/O still simultaneously
Higher than optical interconnection (I.A.Young et al., " Optical I/O technology for tera-scale
computing,”IEEE J.Solid-State Circuits,vol.45,no.1,pp.235–248,Jan.2010)。
Accompanying drawing explanation
Terahertz I/O transceiver on the two-way multi-channel sheet that Fig. 1 this patent proposes, including: 140GHz signal source, based on double
The surface wave manipulator of layer SRR structure, surface wave interconnection (including surface wave transmission line and surface wave bonder), under self-mixing
Converter, and multistage baseband amplifier.
Fig. 2. surface wave transmission line that (a) is proposed and surface wave bonder, and conventional transmission line damages at CMOS height
Domain schematic diagram under substrate environment and distribution map of the electric field.Parameter d, during the week that h, a, w represent surface wave transmission line respectively
Away from, the protruding degree of depth, ledge width and main line width.The magnetic direction of surface wave transmission line points to x direction and electric field is positioned at yz plane
And it is directed at, by the most protruding, the direction that magnetic field is vertical.The b surface wave transmission line that () emulation obtains electric field on x/y plane
Intensity distributions, parameter is provided that d=12 μm, a=2.4 μm, h=12 μm and w=5 μm, (c) periodically bulge-structure are cutd open
Electric-field intensity distribution on face.
Fig. 3. double-channel surface wave transmission line and double-channel conventional transmission line (interchannel under (a) 65 nanometer CMOS process
Away from being 2.4 μm) emulation S parameter: wherein S41 is inter-channel crosstalk and S21 is channel Insertion Loss, and (b) surface wave transmission line exists
The simulated electric field distribution of x/y plane, parameter is as follows: d=12 μm, a=2.4 μm, and h=12 μm and w=5 μm, (c) is the most convex
Play electric-field intensity distribution (d and the e) surface wave transmission line spread length under different size of structural profile: (d) different convex
Play degree of depth h=6 μm, 9 μm and 12 μm, and (e) different main line wide w=2 μm and 5 μm.
Fig. 4. the surface wave manipulator come from passive SRR structural evolution proposed: four MOS switch are simultaneously connected to
The opening part of two internal ring also realizes modulation function, and the input grid of metal-oxide-semiconductor is modulated by high-speed digital signal；Surface wave manipulator
3D corresponding to the open/close state figure of equivalence, and the Insertion Loss under open state and the isolation under off status and disappearing of being caused
Light rate.
Fig. 5. (a) each modulation system realizes being less than the signal to noise ratio required for the 10-12 bit error rate, and (b) uses sending out of ASK modulation
The ken simulation waveform of each assembly of machine of penetrating, and (c) receiver structure and the time domain beamformer of emulation.
The eye pattern (a) of Fig. 6 emulation uses surface wave assembly (single channel) I/O eye pattern under 25Gbps traffic rate, (b)
Using conventional transmission line component (single channel) I/O eye pattern under 25Gbps traffic rate, (c) uses surface wave assembly (double letters
Road) I/O eye pattern under 20Gbps traffic rate, (d) uses conventional transmission line component (double-channel) I/O in 20Gbps communication speed
Eye pattern under rate, (e) uses surface wave assembly (double-channel) I/O eye pattern under 25Gbps traffic rate, and (f) uses tradition to pass
Defeated line component (double-channel) I/O eye pattern under 25Gbps traffic rate, (g) uses surface wave assembly (double-channel) I/O to exist
The waveform of demodulating data under 25Gbps traffic rate, (h) uses conventional transmission line component (double-channel) I/O in 25Gbps communication speed
The waveform of demodulating data under rate.Vertical precision: 20mV/div；Horizontal accuracy: 2ps/div.
Detailed description of the invention
Monolithic Terahertz wire communication integrated circuit based on surface plasma, including surface wave transmission line, surface wave
Bonder, surface wave manipulator, Terahertz concussion source, and transceiver, as shown in Figure 1.Due to Terahertz surface wave manipulator
Working region there is optimal value, that is to say the region that extinctivity is the highest, the operating frequency in surface wave concussion source needs continuously may be used
Adjust thus ensure that the carrier frequency of output can fall in the optimized working zone territory of surface wave manipulator.This can be by terahertz
Hereby increasing capacitor array in concussion source, the electric capacity quantity in array is incremented by successively, such that it is able to the output of Artificial Control agitator
Frequency band, and design a varactor and be connected in parallel on the outfan of oscillator, come real by the voltage at regulation varactor two ends
The continuously adjustabe of existing output frequency.
Present invention Terahertz based on the surface plasma fully integrated transceiver design of wire communication, is divided into three below work
Making step: agitator powers on, data are launched and data receiver.Agitator works on power process as previously mentioned.Carrier frequency is true
After Ding, data form the digital signal of full swing after 3-4 level buffer and drive Terahertz manipulator so that it is according to data
Value thus export different waveforms.This process is similar to up-conversion, and therefore output signal comprises Terahertz component.Terahertz subsequently
Electromagnetic wave, by Terahertz transmission line to input, is coupled to input the surface wave transmission of section after bonder by ripple
On line, at the frequency mixer through self-mixing, Terahertz component is filtered out, thus leave digital information.This digital information is by several
The digital signal of full swing is formed after level baseband amplifier.
Surface wave, owing to its wave vector is much larger than the relation of tradition TEM ripple, needs to realize certain turning inside transceiver
Change process.As it is shown in figure 1, the TEM carrier wave that THz source produces directly cannot be joined directly together with surface wave manipulator and connect.Therefore,
Need to design a surface wave transmission line between THz source and surface wave manipulator, and the serration depth of this transmission line is gradually
Become, the most shallow the closer to THz source serration depth, and the deepest the closer to surface wave manipulator sawtooth, thus realize TEM wave direction
The conversion of surface wave.In like manner, at transmitter section, surface wave electromagnetic wave cannot directly be first mixed device down coversion, because frequency mixer
Loading section be traditional RLC structure, process is TEM ripple.Therefore, first surface wave bonder is believed Terahertz surface wave
Number it is coupled on surface wave transmission line, and the sawtooth of this transmission line is also gradual change, enumerates the degree of depth the closer to frequency mixer the most shallow, and
The deepest the closer to surface wave bonder serration depth, thus realize the conversion of surface wave direction tradition TEM ripple.
According to foregoing summary, devise fully integrated wire communication on a Terahertz sheet based on surface wave boundling and receive
The system of sending out.Wherein the cross-coupled pair metal-oxide-semiconductor width of Terahertz Oscillators is 15 microns, and inductance size is 150pH, and electric capacity is divided into
Three wave bands, and variable capacitance width is 10 microns, and the gain of agitator is 1.2GHz/V.The communication chief of surface wave transmission line
Degree is 20mm, and serration depth is 12 microns, and the cycle is 15 microns, and jaggy pitch is 2.4 microns.Notice that jaggy pitch is generally selected
Take minima, technique and design rule determine.Surface wave bonder uses top layer copper metal and top aluminum metal to design, and two
Intercouple between metal level.Serration depth, spacing and cycle same surface wave transmission line.The size of surface wave manipulator is 40 μm
× 67 μm, realize the extinctivity of up to 23dB at 140GHz, and this optimized working zone territory coincide with the output frequency of agitator.Should
The design of manipulator employs copper metal OI and EA of top, and thickness has 3.3 μm and 1.2 μm respectively, and width is 4 microns.
The depth-graded of above-mentioned mode converter is 1 micron.The frequency mixer of receiving terminal is traditional Gilbert cell.Base band is amplified
Device is 2-3 level CML buffer, wherein uses inductive resistance parallel connection to promote bandwidth as load.This design comprises 2 groups of transmitting-receivings
Machine, and make the minima (2.4 microns) allowed by producer as the surface wave transmission distance between centers of tracks of channel, thus observe table
Face ripple fetters ability and the ability always to crosstalk to field.
Simulation result show designed by 140GHz sheet based on surface wave on fully integrated transceiver can transmit 25Gb/s
Signal, and can effectively suppress the electromagnetic crosstalk of terahertz wave band interchannel.As a comparison, transmitting-receiving based on tradition TEM ripple
Machine is due to the serious crosstalk by interchannel, it is impossible to the transmission data more than 20Gb/s.This result is as shown in Figure 6.
Claims (4)
1. with surface wave interconnection and an energy-conservation low crosstalk CMOS Terahertz I/O for surface wave manipulator, including: Terahertz table
Face ripple passive device and Terahertz sheet upper surface ripple receive-transmit system based on surface wave passive device, described Terahertz surface wave without
Source device includes surface wave transmission line, the surface wave manipulator of SRR and surface wave bonder；
Surface wave transmission line is connected with the top layer copper metal of surface wave bonder as channel, and the other end of surface wave bonder
It is connected with surface wave manipulator；Wherein surface wave bonder comprises bonder itself and surface wave transmission line, when surface wave exists
Transmission line is uploaded sowing time, and electromagnetic wave is passed from a certain layer transmission line coupling to another layer surface wave by bonder with the form of surface wave
On defeated line；
The signal of described receive-transmit system based on Terahertz surface wave transmits and is divided into three steps:
1) need to generate the signal source of 140GHz on sheet, this signal source as providing the carrier wave of transmitter transmission data, and with
Surface wave manipulator is connected；This carrier wave gives manipulator output signal incessantly, and manipulator is 0 or 1 according to input data
Judge output amplitude；
2) giving channel by data, the TEM ripple that this stage needs a transducer signal source to be produced is converted into surface wave, and is somebody's turn to do
Transducer can obtain by being incrementally increased the degree of depth that periodically dressing is protruding；TEM ripple will change into surface wave and send subsequently
Signal is launched to manipulator；
3) reception of signal, after surface wave is sent to receiving terminal by surface wave transmission line channel, also needs to pass through transducer
Surface wave being converted into TEM ripple and carries out signal processing for subsequent module, the method for conversion is to be gradually lowered periodically dressing projection
The degree of depth obtains；Change complete after, TEM mode still maintains the information of output end signal amplitude, by lower mixing action
Carrier signal is filtered and is converted into by baseband amplifier subsequently the binary signal output of full swing.
2. CMOS Terahertz I/O as claimed in claim 1, it is characterised in that described surface wave transmission line uses 65 nanometers
CMOS technology, the superiors layers of copper metal OI is as metal level, for periodic dressing structure, the period pitch d choosing of this transmission line
Being 15 μm, much smaller than operation wavelength, and the wide w of main line is 5 μm, and this selection of dimension is applicable to the frequency application more than 100GHz, table
The design of face ripple transmission line is as follows:
After 2-1) determining carrier frequency, dispersion relation calculate the periodically dressing bulge-structure degree of depth；
2-2) width that main line is wide is chosen for when nub depth is 0 when transmission line at the carrier frequencies and can match 50 ohm
Live width required during impedance；
2-3) the minimum metal spacing that the spacing of usual dressing structure is allowed by technique；
If 2-4) top aluminium lamination metal is relatively thin (such as much smaller than the thickness of copper metal), then use the copper metal of the superiors
Line；
2-5) when needs are by time placed side by side for many root surface ripple transmission line, and the aspectant part of metal need not design dressing knot
Structure, is therefore monolateral dressing structure；
2-6) considering the conversion of TEM wave direction surface wave, the degree of depth of periodic dressing structure has only to be slowly increased；Otherwise, then subtract
Few；
2-7) emulation of surface wave transmission line can realize in electromagnetic simulation software such as HFSS, subsequently its overall Layout by
Gds file is derived and integrated with device on other sheets.
3. CMOS Terahertz I/O as claimed in claim 1, it is characterised in that described surface wave transmission line and surface wave
The ground level of bonder is made up of bottom copper metal M1；Described surface wave bonder uses metal OI and the LB design of top.
4. CMOS Terahertz I/O as claimed in claim 1, it is characterised in that letter based on Terahertz surface wave receive-transmit system
Number processing procedure is as follows:
4-1) power-up initializing transmitter makes oscillator operation and observes output frequency；
4-2) it is made to fall into the work of surface wave manipulator by the Voltage Cortrol oscillator output frequencies on regulation tunable capacitor
Scope；
4-3) data (25Gb/s) are sent into transmission in chip；
4-4) by surface wave data receiver and be converted into TEM mode；
4-5) high frequency waves of TEM mode are downconverted into baseband signal；
4-6) baseband signal is amplified to full swing by what buffer amplifier；
Wherein, the regulation process of agitator is as follows:
A) supply voltage is slowly increased to 1.2V from 0V, observes the output frequency of agitator with audiofrequency spectrometer；
B) S parameter of open and closed lower surface wave modulator is obtained with audiofrequency spectrometer；
C) difference of S21 under gauging surface wave modulator open and closed, frequency when determining or take maximum；
D) its operating frequency is transferred to above-mentioned difference maximum by adjusting the voltage-controlled voltage of agitator；
E) high-speed data being sent into chip, observe transmitting terminal eye pattern with oscillograph or JBERT, the voltage-controlled voltage of fine tuning agitator is straight
Best to eye pattern.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708017A (en) * | 2019-09-25 | 2020-01-17 | 天津大学 | Novel Triple-push cross-coupled oscillator |
| CN111988093A (en) * | 2019-05-24 | 2020-11-24 | 华为技术有限公司 | System on chip, chip and electronic equipment based on surface wave communication |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255121A (en) * | 2011-05-11 | 2011-11-23 | 东南大学 | Broadband slow wave system based on cylindrical line waveguide excitation |
| CN104332686A (en) * | 2014-10-31 | 2015-02-04 | 东南大学 | Waveguide structure based on artificial surface plasmon device and amplifier |
| CN104901145A (en) * | 2015-06-24 | 2015-09-09 | 西北核技术研究所 | Continuous-wave terahertz surface wave oscillator |
-
2016
- 2016-05-27 CN CN201610365540.9A patent/CN106055517A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255121A (en) * | 2011-05-11 | 2011-11-23 | 东南大学 | Broadband slow wave system based on cylindrical line waveguide excitation |
| CN104332686A (en) * | 2014-10-31 | 2015-02-04 | 东南大学 | Waveguide structure based on artificial surface plasmon device and amplifier |
| CN104901145A (en) * | 2015-06-24 | 2015-09-09 | 西北核技术研究所 | Continuous-wave terahertz surface wave oscillator |
Non-Patent Citations (1)
| Title |
|---|
| YUAN LIANG ETC: "An Energy Efficient and Low Cross-talk CMOS Sub-THz I/O with Surface-wave Modulator and Interconnect", 《2015 IEEE/ACM INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN(ISLPED)》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111988093A (en) * | 2019-05-24 | 2020-11-24 | 华为技术有限公司 | System on chip, chip and electronic equipment based on surface wave communication |
| CN111988093B (en) * | 2019-05-24 | 2021-10-15 | 华为技术有限公司 | System on chip, chip and electronic equipment based on surface wave communication |
| CN110708017A (en) * | 2019-09-25 | 2020-01-17 | 天津大学 | Novel Triple-push cross-coupled oscillator |
| CN110708017B (en) * | 2019-09-25 | 2023-02-24 | 天津大学 | Triple-push cross coupling oscillator |
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