CN106026931B - A kind of device equipped with third generation semi-conducting material power amplifier module - Google Patents
A kind of device equipped with third generation semi-conducting material power amplifier module Download PDFInfo
- Publication number
- CN106026931B CN106026931B CN201610336517.7A CN201610336517A CN106026931B CN 106026931 B CN106026931 B CN 106026931B CN 201610336517 A CN201610336517 A CN 201610336517A CN 106026931 B CN106026931 B CN 106026931B
- Authority
- CN
- China
- Prior art keywords
- baffle
- power amplifier
- heat dissipation
- dissipation chamber
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
The invention discloses a kind of devices equipped with third generation semi-conducting material power amplifier module, including shell and heat sink, it is operating room above heat sink, lower section is heat dissipation chamber, there is baffle in operating room, baffle contacts GaN power amplifier modules, baffle is through heat sink to heat dissipation chamber bottom, overflow plate is provided on baffle, there is shower plate inside heat dissipation chamber, there is fountain head on shower plate, the nozzle of fountain head is straight up, water pipe inside fountain head is connected with the water main being arranged inside shower plate, water main is connected with water inlet pipe through heat dissipation chamber side, water inlet pipe is connected with micro pump, micro pump is connected with cooler by water pipe, it is provided with outlet pipe below water inlet pipe, outlet pipe is connected to heat dissipation chamber and cooler.GaN power amplifier module of the present invention by way of water cooling in solid-state power amplifier carries out temperature with high efficiency so that the working efficiency of GaN power amplifier modules is improved, and improves the room for improvement of solid-state power amplifier.
Description
Technical field
The present invention relates to a kind of solid-state power amplifiers, and in particular to one kind is equipped with third generation semi-conducting material power amplifier mould
The device of block.
Background technology
With advances in technology, at present in observing and controlling, satellite communication, radar, electronic warfare system, high-tension electricity line walking etc.
The working frequency of military and civilian's equipment field has reached millimeter wave frequency band.High power solid state power positioned at launch channel end is put
Big device is most important to system performance, to the Measure Precision of system, communication quality, operating radius and anti-interference ability etc.
It plays an important role.The main function of solid-state power amplifier is that the signal for needing to send is amplified to certain power electricity
It is flat, then it is wirelessly transmitted to space through antenna, the key technical indexes includes output power, bandwidth of operation and standing-wave ratio
Deng.Compared to travelling-wave tube amplifier, solid-state power amplifier has obviously in operating voltage, reliability and adaptive capacity to environment etc.
Advantage, so its application in systems receives the favor of people.
GaN（Gallium nitride）As third generation semi-conducting material, have the characteristics that high power capacity and high fever capacitive, GaN's
Microwave power performance will be much better than traditional semi-conducting material such as Si, GaAs, and GaN material itself has broad stopband width, height full
With electron mobility and the characteristic of high breakdown fields.In conclusion GaN microwave power devices become the hot spot of Recent study.
It is big further using chip scale power synthesis, circuit-level power combing or space power synthesis technology to make
During Power Solid State power amplifier module, not only volume and weight is restricted, but also its thermal stability is also by tight
The test of lattice, in practical applications, very strict to the working efficiency requirement of solid state power amplifier module, the height of operating temperature will
Influence the working efficiency of solid state power amplifier module.
Traditional solid-state power amplifier radiates to its power amplifier module mounted by the way of air-cooled, but air-cooled
Heat dissipation there are the thermal conductivity of air dielectric it is low, heat dissipation area is small the shortcomings of, heat dissipation effect is bad, can not efficiently reduce power amplifier
The operating temperature of module, so limiting the further development of solid-state power amplifier.
Invention content
The technical problem to be solved by the present invention is to the defects for conventional solid-state power amplifier, and it is an object of the present invention to provide one
Device of the kind equipped with third generation semi-conducting material power amplifier module solves traditional solid-state power amplifier and uses air-cooled mode
Heat dissipation is carried out to its power amplifier module mounted and leads to not efficiently cool down power amplifier module work effect caused by power amplifier module
The low problem of rate.
The present invention is achieved through the following technical solutions：A kind of device equipped with third generation semi-conducting material power amplifier module,
Being horizontally disposed with including shell, in shell has heat sink, and enclosure interior is divided into two parts by heat sink, is work above heat sink
Room, is heat dissipation chamber below heat sink, and spaced set has several baffles perpendicular to heat sink in operating room, and being contacted on baffle has
GaN power amplifier modules above heat sink, baffle are parallel to the shorter side of operating room's length, baffle only there are one side with
The side of operating room connects, and the position relationship between baffle is configured as, the same side of the side connection operating room of alternate baffle
Face, the side of adjacent screen are separately connected two sides being mutually parallel in operating room, and baffle connects heat dissipation chamber through heat sink
Bottom is provided perpendicular to the rotation axis of heat dissipation chamber bottom on the baffle of heat dissipation chamber bottom, hard spring is wound in rotation axis,
Rotation axis is connected with overflow plate, and shower plate is provided on the side inside heat dissipation chamber, and shower plate connection is adjacent with side where it
Two sides, be equidistantly provided with several fountain heads on shower plate, fountain head is between adjacent baffle, the spray of fountain head
Straight up, the water pipe inside fountain head is connected with the water main being arranged inside shower plate to mouth, and water main runs through heat dissipation chamber side
Face is connected with water inlet pipe, and water inlet pipe is connected with micro pump, and micro pump is connected with cooler by water pipe, is set below water inlet pipe
It is equipped with outlet pipe, outlet pipe is connected to heat dissipation chamber and cooler.In the prior art, traditional solid-state power amplifier mainly uses wind
Cold mode cools down to power amplifier module, avoids the excessively high influence working efficiency of its operating temperature.But using traditional heat dissipation
When fan is radiated, the problems such as thermal conductivity that can encounter air dielectric is low, heat dissipation area is small, so air-cooled heat dissipation effect is not
It is good, cannot efficiently reduce the operating temperature of power amplifier module, limit high power solid state power amplifier it is further development with
Using.To solve the above-mentioned problems, the present invention provides a kind of solid-state power amplifiers using water-cooled cooling.In solid state power
It is provided with heat sink in the shell of amplifier, baffle is provided on heat sink, heat sink and baffle are all made of the high gold of thermal conductivity
Belong to, such as silver, aluminium etc..Baffle is parallel with one side that operating room's length is shorter, and only there are one side and working chamber sides for baffle
It connects, the position relationship between baffle is that adjacent baffle is separately connected two sides being mutually parallel in operating room, alternate
Baffle connects same side, and baffle is connect through heat sink with heat dissipation chamber bottom, and therefore, baffle will be in operating room and heat dissipation chamber
Portion space has been divided into S-shaped.GaN power amplifier modules and other electronic components such as capacitance, resistance etc. are connected on baffle, here
The GaN power amplifier modules of application are the prior art；Shower plate is provided on side inside heat dissipation chamber, shower plate is also connected with and its institute
In two adjacent sides of side, i.e., the part that the water above shower plate can be not in contact with by shower plate with heat dissipation chamber interior walls
It flows into below shower plate.Several fountain heads are provided on shower plate, the nozzle on fountain head faces heat sink straight up
Bottom, shower plate is internally provided with water main, and water main passes through heat dissipation chamber side to connect water inlet pipe, and water inlet pipe is sequentially connected micro-
Type water pump and cooler, cooler connect outlet pipe.Micro pump and cooler are the prior art, all have it is small, make an uproar
The low advantage of sound can be obtained by buying on the market, furthermore it is also possible to using integral type water collecting pump, integral type water collecting pump
Water pump, water tank and cooler are contained, Highgrade integration saves space.When work, micro pump is run, water is from Miniature water
Water inlet pipe, water main, fountain head, heat dissipation chamber, outlet pipe, cooler are flowed out and passed sequentially through in pump, are eventually returned to micro pump
In, form water cycle.GaN power amplifier modules are contacted with heat sink and baffle, will be on GaN power amplifier modules by heat sink and baffle
High temperature reaches below heat sink and on baffle, and water is sprayed onto heat sink bottom when flowing through heat dissipation chamber, by fountain head, to heat dissipation
Plate cools down, and water drops down onto and flows through the S-shaped runner that baffle is divided on shower plate later, and flow enters below shower plate later, after
Continue and walk S-shaped runner below shower plate, by the way that S-shaped runner is arranged, not only allows the water to fully absorb GaN power amplifier modules and pass through heat dissipation
The heat that plate and baffle transmit, moreover it is possible to pass water through enough contacts area between baffle, refrigerated baffle, to operating room
Interior GaN power amplifier modules are further cooled down.In addition, S-shaped runner may make water generate delay, when flow is too fast
It waits, the water in front may backflow to collide with the water at rear, reduces water cycle efficieny, to solve the above-mentioned problems, in place
It is provided with rotation axis, hard spring and overflow plate on baffle below the shower plate, overflow plate side is rotated around rotation axis, hard spring
As making overflow sheet reset, which is the prior art, it is solved the problem of be to be accumulated around the corner when water velocity is too fast
When, flow can push overflow plate open and be flowed directly to the baffle other side, etc. after water velocities slow down and stablize, overflow plate is in hard bullet
The position parallel with baffle can be restored under the action of spring, to play blocking flow and be allowed to the work along S-shaped flow passage
With.Final flow, which is flow to from outlet pipe in cooler, to be cooled down, and is entered from water inlet pipe using micro pump after cooling and is dissipated
Hot cell.By above structure and principle, can efficiently be cooled down to the indoor electronic device that works.Water-cooling system heat radiation energy
Power strong the reason of crossing air cooling system, first, because the heat absorption of water and heat conductivility ratio air are good very much, second is that because of water-cooling system
Total heat dissipation area it is also more much larger than air cooling system, the present apparatus does not cool down electronic component using only heat sink, also makes
With baffle, heat transfer area is increased, improves cooling efficiency, by efficiently cooling down so that the work of High-power amplifier module
It is improved as efficiency, improves the room for improvement and application range of solid-state power amplifier.It makes an uproar in addition, water-cooling system also has
The small advantage of sound so that solid-state power amplifier can be flexibly applied in field of satellite communication systems.
Further, the angle of shower plate and heat sink is 2 to 5 °, and shower plate is close to one end of water inlet pipe and heat dissipation chamber bottom
The distance in portion is more than the other end at a distance from heat dissipation chamber bottom.By being obliquely installed shower plate, on the one hand so that sluggish flow edge
It the runner on shower plate and flow to the other end of shower plate close to one end of water inlet pipe from shower plate, and enter below shower plate
Runner；On the other hand, close to the fountain head of water inlet pipe one end closer to heat sink, cooling effect is more preferable, can be by power amplifier
Most crucial electronic component such as monolithic integrated microwave circuit chip is placed on corresponding position above heat sink and reaches in module
Preferably to the purpose of core electron element cooling.
Further, it is both provided with thermal grease between heat sink, baffle and GaN power amplifier modules.Thermal grease has low
The characteristics of thermal resistance, high thermal conductivity, is coated with heat dissipation silicon at it because GaN power amplifier modules are critical pieces between heat sink, baffle
Glue can reduce friction, make GaN power amplifier modules come into full contact with to improve pyroconductivity with heat sink, baffle so that GaN power amplifier moulds
The heat of block is more effectively transferred to heat sink and baffle.
Further, water main is made of polymer material.Water main gets rusty and causes water circulating effect poor in order to prevent,
Water main is made of polymer material such as polytetrafluoroethylene (PTFE), not only be ensure that the intensity of water main, will not be got rusty, and weight
Gently, the total weight of solid-state power amplifier is reduced.
Further, it is provided with nozzle cover on nozzle, several through-holes are provided on nozzle cover.It, can be with by above-mentioned setting
So that the spray of uniform fluid flow in heat sink bottom, without only spraying the local location in heat sink bottom, causes heat dissipation to be imitated
Fruit is poor.
Further, it is provided with ball valve on water inlet pipe.By the way that ball valve is arranged on water inlet pipe, inflow can be adjusted, is controlled
Water circulating speed processed so that operating personnel can control the indoor temperature of heat dissipation.
Further, outlet pipe is close to heat dissipation chamber bottom.Setting is so that flow will not be accumulated in heat dissipation chamber bottom in this way.
Further, several through-holes are provided on the indoor baffle of work.Working, setting on indoor baffle is logical
Hole is conducive to the connection between each electronic component, and designer is facilitated more reasonably to design and planning indoor electronic element
Layout.
Further, rotation axis is close to heat dissipation chamber side.Because the position that baffle is contacted with heat dissipation chamber interior walls is easiest to shape
It is accumulated at flow, so rotation axis, hard spring and overflow plate are arranged here can preferably remove accumulation of the flow in runner.
Compared with prior art, the present invention having the following advantages and advantages：
1, the present invention cools down to the GaN power amplifier modules in solid-state power amplifier by way of water cooling, because of water
Heat absorption and heat conductivility than air is good many and total heat dissipation areas of water-cooling system also than, institute more much larger than air cooling system
With good cooling effect, the working efficiency of high-power GaN power amplifier modules can be made to be improved, increase solid-state power amplifier
Room for improvement and application range；
2, the present invention is cooled down by the way of water cooling, has the characteristics that noise is small so that solid-state power amplifier can
To be more suitable for space, satellite broadcasting and military field；
3, present invention uses baffles, increase heat dissipation area, improve radiating efficiency, make GaN solid state power amplifier modules
Working efficiency further increases；
4, the present invention on baffle be provided with rotation axis, hard spring and overflow plate, eliminate water circulating speed it is too fast when, spray
It drenches flow caused by the corner that baffle is formed with heat dissipation chamber interior walls in the runner below plate to accumulate, improves water cycle effect
Rate；
5, the present invention is made using water main of polytetrafluoroethylene (PTFE), not only be ensure that the intensity of water main but also will not be given birth to
Rust, and its weight is light compared with metal, reduces the total weight of solid-state power amplifier.
Description of the drawings
Attached drawing described herein is used for providing further understanding the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is cross-sectional view of the present invention；
Fig. 2 is the diagrammatic cross-section in the faces A-A in Fig. 1.
Label and corresponding parts title in attached drawing：
1- shells, 2- heat sinks, 3- shower plates, 4- fountain heads, 5- water inlet pipes, 6- outlet pipes, 7-GaN power amplifier modules, 8-
Baffle, 9- rotation axis, 10- overflow plates.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment
As shown in Figure 1, the present invention is a kind of device equipped with third generation semi-conducting material power amplifier module, including shell 1,
Being horizontally disposed in shell 1 has heat sink 2, and heat sink 2 will be divided into two parts inside shell 1,2 top of heat sink is operating room, is dissipated
It is heat dissipation chamber below hot plate 2, spaced set has several baffles 8 perpendicular to heat sink 2 in operating room, and being contacted on baffle 8 has
GaN power amplifier modules 7 above heat sink 2, baffle 8 are parallel to the shorter side of operating room's length, and there are one sides for 8, baffle
The side of face and operating room connects, and the position relationship between baffle 8 is configured as, the side connection operating room of alternate baffle 8
Same side, the side of adjacent screen 8 are separately connected two sides being mutually parallel in operating room, and baffle 8 connects through heat sink 2
Heat dissipation chamber bottom is connect, the rotation axis 9 of heat dissipation chamber bottom, the rotation are provided perpendicular on the baffle 8 of heat dissipation chamber bottom
Hard spring is wound on axis 9, rotation axis 9 is connected with overflow plate 10, and shower plate 3, shower plate 3 are provided on the side inside heat dissipation chamber
Two sides adjacent with side where it are connected, are equidistantly provided with several fountain heads 4 on shower plate 3, fountain head 4 is located at phase
Between adjacent baffle 8, straight up, the water pipe inside fountain head 4 is connected with to be arranged inside shower plate 3 nozzle of fountain head 4
Water main, water main is connected with water inlet pipe 5 through heat dissipation chamber side, and water inlet pipe 5 is connected with micro pump, and micro pump passes through
Water pipe is connected with cooler, and 5 lower section of water inlet pipe is provided with outlet pipe 6, and outlet pipe 6 is connected to heat dissipation chamber and cooler.Shower plate 3 with
The angle of heat sink 2 is 2 to 5 °, and shower plate 3 is more than the other end and is dissipated at a distance from one end of water inlet pipe 5 with heat dissipation chamber bottom
The distance of hot cell bottom.It is both provided with thermal grease between heat sink 2, baffle 8 and GaN power amplifier modules 7.Water main is by polymer
Material is made.It is provided with nozzle cover on nozzle, several through-holes are provided on nozzle cover.It is provided with ball valve on water inlet pipe 5.Outlet pipe
6 close to heat dissipation chamber bottom.It is provided with several through-holes on the indoor baffle of work 8.Rotation axis 9 is close to heat dissipation chamber side.Make
When with the present apparatus, micro pump is first turned on, flow is entered from water inlet pipe 5 in water main, and heat dissipation is sprayed to by fountain head 4
Below plate 2, transferred heat in flow by heat sink 2 and baffle 8 on GaN power amplifier modules 7 and other electronic components, water
Stream cools down baffle 8 in flow process along the flow passage below the runner and shower plate 3 of 3 top of shower plate
And the heat transmitted in absorbing curtain 8, when water circulating speed is too fast, the overflow plate 10 being arranged on baffle 8 can eliminate baffle 8
It is formed by the flow of corner's accumulation with heat dissipation chamber interior walls, improves water cycle efficieny, final flow is entered by outlet pipe 6
In cooler, after cooler cools down to flow, flow enters in micro pump, and is delivered to again in water inlet pipe 5, completes
Water recycles.Because the heat absorption of water and heat conductivility than good many and water-cooling system the total heat dissipation areas of air also than than air-cooled
System is much larger, so the good cooling effect of water-cooling pattern, can make the working efficiency of GaN power amplifier modules be improved, carry
The room for improvement of solid-state power amplifier is risen.
Above-described specific implementation mode has carried out further the purpose of the present invention, technical solution and advantageous effect
It is described in detail, it should be understood that the foregoing is merely the specific implementation mode of the present invention, is not intended to limit the present invention
Protection domain, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (7)
1. a kind of device equipped with third generation semi-conducting material power amplifier module, including shell (1), which is characterized in that the shell
Being horizontally disposed in body (1) has heat sink (2), and the heat sink (2) will be divided into two parts, heat sink (2) top inside shell (1)
It is heat dissipation chamber for operating room, below heat sink (2), spaced set has several perpendicular to heat sink (2) in the operating room
Baffle (8), on the baffle (8) contact there is the GaN power amplifier modules (7) above heat sink (2), baffle (8) to be parallel to work
Make the shorter side of room length, only there are one the sides of side and operating room to connect for baffle (8), and the position between baffle (8) is closed
System is configured as, and the same side of the side connection operating room of alternate baffle (8), the side of adjacent screen (8) is separately connected work
Make indoor two sides being mutually parallel, baffle (8) is through heat sink (2) connection heat dissipation chamber bottom, close to heat dissipation chamber bottom
It is provided perpendicular to the rotation axis (9) of heat dissipation chamber bottom on baffle (8), hard spring, rotation axis are wound on the rotation axis (9)
(9) it is connected with overflow plate (10), shower plate (3) is provided on the side inside heat dissipation chamber, the shower plate (3) connects heat dissipation chamber
Two sides being mutually parallel, two sides being mutually parallel of heat dissipation chamber connect with the side where shower plate (3), institute
It states and is equidistantly provided with several fountain heads (4) on shower plate (3), the fountain head (4) is between adjacent baffle (8), spray
Straight up, the internal water pipe of fountain head (4) is connected with the setting water main internal in shower plate (3), institute to the nozzle of head (4)
It states water main and is connected with water inlet pipe (5) through heat dissipation chamber side, the water inlet pipe (5) is connected with micro pump, the Miniature water
Pump is connected with cooler by water pipe, is provided with outlet pipe (6) below water inlet pipe (5), outlet pipe (6) the connection heat dissipation chamber with
Cooler；The shower plate (3) and the angle of heat sink (2) are 2 to 5 °, and shower plate (3) is close to one end of water inlet pipe (5) and dissipates
The distance of hot cell bottom is more than the other end at a distance from heat dissipation chamber bottom；It is provided on the indoor baffle of work (8) several
Through-hole.
2. a kind of device equipped with third generation semi-conducting material power amplifier module according to claim 1, which is characterized in that
It is both provided with thermal grease between the heat sink (2), baffle (8) and GaN power amplifier modules (7).
3. a kind of device equipped with third generation semi-conducting material power amplifier module according to claim 1, which is characterized in that
The water main is made of polytetrafluoroethylene (PTFE).
4. a kind of device equipped with third generation semi-conducting material power amplifier module according to claim 1, which is characterized in that
It is provided with nozzle cover on the nozzle, several through-holes are provided on nozzle cover.
5. a kind of device equipped with third generation semi-conducting material power amplifier module according to claim 1, which is characterized in that
It is provided with ball valve on the water inlet pipe (5).
6. a kind of device equipped with third generation semi-conducting material power amplifier module according to claim 1, which is characterized in that
The outlet pipe (6) is close to heat dissipation chamber bottom.
7. a kind of device equipped with third generation semi-conducting material power amplifier module according to claim 1, which is characterized in that
Close to heat dissipation chamber side, the heat dissipation chamber side is connected the rotation axis (9) to be provided with the baffle (8) of the rotation axis (9)
Side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610336517.7A CN106026931B (en) | 2016-05-20 | 2016-05-20 | A kind of device equipped with third generation semi-conducting material power amplifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610336517.7A CN106026931B (en) | 2016-05-20 | 2016-05-20 | A kind of device equipped with third generation semi-conducting material power amplifier module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106026931A CN106026931A (en) | 2016-10-12 |
| CN106026931B true CN106026931B (en) | 2018-09-11 |
Family
ID=57096116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610336517.7A Active CN106026931B (en) | 2016-05-20 | 2016-05-20 | A kind of device equipped with third generation semi-conducting material power amplifier module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106026931B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111030615B (en) * | 2019-11-12 | 2024-02-13 | 南京长峰航天电子科技有限公司 | 6-18 GHz ultra-wideband high-power solid-state power amplifier assembly |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103179820A (en) * | 2013-02-25 | 2013-06-26 | 杭州师范大学 | Novel electric control cabinet |
| WO2014086070A1 (en) * | 2012-12-03 | 2014-06-12 | 永济新时速电机电器有限责任公司 | Cooling pipeline and cooling apparatus for a converter |
| CN104501326A (en) * | 2014-11-12 | 2015-04-08 | 北京百度网讯科技有限公司 | Heat-dissipating system and method |
| CN204774090U (en) * | 2015-05-28 | 2015-11-18 | 张家港金米兰德龙机械有限公司 | Semiconductor marking machine |
| CN205648323U (en) * | 2016-05-20 | 2016-10-12 | 四川汇英光电科技有限公司 | A power amplifier module carrying device for satellite communication |
| CN205648324U (en) * | 2016-05-20 | 2016-10-12 | 四川汇英光电科技有限公司 | Ku wave band solid -state power amplifier module carrying device |
| CN205792467U (en) * | 2016-05-20 | 2016-12-07 | 四川汇英光电科技有限公司 | A kind of solid-state power amplifier for radar guidance system |
-
2016
- 2016-05-20 CN CN201610336517.7A patent/CN106026931B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014086070A1 (en) * | 2012-12-03 | 2014-06-12 | 永济新时速电机电器有限责任公司 | Cooling pipeline and cooling apparatus for a converter |
| CN103179820A (en) * | 2013-02-25 | 2013-06-26 | 杭州师范大学 | Novel electric control cabinet |
| CN104501326A (en) * | 2014-11-12 | 2015-04-08 | 北京百度网讯科技有限公司 | Heat-dissipating system and method |
| CN204774090U (en) * | 2015-05-28 | 2015-11-18 | 张家港金米兰德龙机械有限公司 | Semiconductor marking machine |
| CN205648323U (en) * | 2016-05-20 | 2016-10-12 | 四川汇英光电科技有限公司 | A power amplifier module carrying device for satellite communication |
| CN205648324U (en) * | 2016-05-20 | 2016-10-12 | 四川汇英光电科技有限公司 | Ku wave band solid -state power amplifier module carrying device |
| CN205792467U (en) * | 2016-05-20 | 2016-12-07 | 四川汇英光电科技有限公司 | A kind of solid-state power amplifier for radar guidance system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106026931A (en) | 2016-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105828583B (en) | A kind of power amplifier module loading device in satellite communication system | |
| CN205648323U (en) | A power amplifier module carrying device for satellite communication | |
| CN205648324U (en) | Ku wave band solid -state power amplifier module carrying device | |
| CN205792467U (en) | A kind of solid-state power amplifier for radar guidance system | |
| WO2017215168A1 (en) | Cooling system of working medium contact type for high-power device, and working method thereof | |
| MXPA04006760A (en) | Small scale chip cooler assembly. | |
| WO2019119266A1 (en) | Heat dissipation structure, remote control device, and unmanned aerial vehicle kit | |
| CN105934138B (en) | The working medium cooling system by contact and its method of work of high-power electromagnetic wave producer | |
| CN105702647B (en) | A kind of nano-spray devices and methods therefor realized high load capacity CPU and strengthen heat sinking function | |
| CN209801860U (en) | Circulating liquid refrigerating system and refrigerating equipment | |
| CN106026931B (en) | A kind of device equipped with third generation semi-conducting material power amplifier module | |
| CN105828582B (en) | A kind of device equipped with Ku wave band solid state power amplifier modules | |
| CN111595059A (en) | Circulating liquid refrigerating system and refrigerating equipment | |
| CN108697036A (en) | A kind of isolated heat radiation structure and its heat dissipating method suitable for charging pile module | |
| CN108131862B (en) | Miniature thermoelectric refrigerator that security performance is high | |
| CN105958950B (en) | A kind of strong heat dissipation type solid-state power amplifier | |
| CN105897187B (en) | A kind of modified solid-state power amplifier for radar guidance system | |
| CN109195406A (en) | A kind of heat sink device | |
| CN205647449U (en) | GaN material power amplifier module's carrying device | |
| CN205847817U (en) | The working medium cooling system by contact of high-power electromagnetic wave producer | |
| CN105958949B (en) | A kind of improved structure of X-band solid-state power amplifier | |
| CN207261103U (en) | Energy-efficient automobile radiator | |
| CN213207571U (en) | Wisdom street lamp heat radiation structure | |
| CN205792466U (en) | A kind of water-cooled solid-state power amplifier | |
| CN205647448U (en) | Solid -state power amplifier of X wave band |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |