CN106021123B - A kind of choosing method and selecting system of 3D flash memory physical block - Google Patents
A kind of choosing method and selecting system of 3D flash memory physical block Download PDFInfo
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- CN106021123B CN106021123B CN201610303540.6A CN201610303540A CN106021123B CN 106021123 B CN106021123 B CN 106021123B CN 201610303540 A CN201610303540 A CN 201610303540A CN 106021123 B CN106021123 B CN 106021123B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
- G06F12/0646—Configuration or reconfiguration
Abstract
The present invention is suitable for technical field of memory, provides the choosing method and selecting system of a kind of 3D flash memory physical block.The choosing method confirms the whether writable data of Physical Page of the corresponding newest physical block of logical address of write operation instruction the following steps are included: when receiving write operation instruction；If data cannot be written, the best blank physical block of performance is determined in the blank physical block group of the 3D flash memory；The data are written in the best blank physical block of the performance.The choosing method considers the performance of each blank physical block during data are written, and so as to reduce the generation of write error, read error, and the correctness for ensuring data of energy maximum magnitude, mitigates the workload of ECC error correction.
Description
Technical field
The invention belongs to technical field of memory more particularly to a kind of choosing methods and selecting system of 3D flash memory physical block.
Background technique
2D NAND (flash memory) is planar structure, and 3D NAND is stereochemical structure, and 3D structure is with vertical semiconductor channel
Mode arrange, the wound grid of multilayer loop (GAA) structure forms more electric grid grade memory cell transistors, can effectively reduce
Interference between storehouse.3D technology not only makes properties of product at least promote 20%, but also power consumption can reduce by 40% or more.3D flash memory
Device not only improves capacity, speed and the reliability of product, the physical region of storage charge is also improved in structure, to mention
High reliability.Therefore, the use of 3D flash memories is more and more wider.
At present when being stored using 3D flash memory, when data are written, the choosing method of blank physical block is usually linear
It chooses, that is, is only to be chosen according to the placement position of physical block merely.The side of blank physical block is chosen using linear method
Method absolutely not considers the performance parameter of physical block itself, therefore does not make good use of blank physical block maximumlly.
Summary of the invention
Technical problem to be solved by the present invention lies in providing the choosing method and selecting system of a kind of 3D flash memory physical block,
Aim to solve the problem that the problem of existing 3D flash memory does not account for physical block performance parameter itself when being stored.
The invention is realized in this way a kind of choosing method of 3D flash memory physical block, comprising the following steps:
When receiving write operation instruction, the physics of the corresponding newest physical block of logical address of write operation instruction is confirmed
Page whether writable data；
If data cannot be written, the best blank physical of performance is determined in the blank physical block group of the 3D flash memory
Block；
The data are written in the best blank physical block of the performance.
Further, if number can be written in the Physical Page of the corresponding newest physical block of logical address of write operation instruction
According to then the data being write direct in the Physical Page of the newest physical block.
Further, the best blank physical block of the performance determined in the blank physical block group of the 3D flash memory
It specifically includes:
Choose the blank physical block group of 3D flash memory；
Two blank physical blocks in the blank physical block group are subjected to performance parameter comparison, choose described two blank
The preferable blank physical block of performance continues to carry out performance with a blank physical block in remaining blank physical block in physical block
Parameter comparison, after comparison is until all blank physical blocks are compared according to this, performance parameter in selection last time comparison
The good blank physical block best as performance.
Further, it is determined that out after the best blank physical block of performance further include:
A blank physical block is arbitrarily chosen except the blank physical block group to add in the blank physical block group
The blank physical block group new as one, in the new blank physical block when choosing the best blank physical block of performance next time
It is chosen in group.
Further, the method also includes:
The block number of the best blank physical block of the performance is written to the best blank physical block of the performance is corresponding to patrol
In the physical block chain for collecting block.
The present invention also provides a kind of selecting systems of 3D flash memory physical block, including confirmation module, selection module and write-in mould
Block；
The confirmation module is used to confirm when receiving write operation instruction that the logical address of write operation instruction to be corresponding
The whether writable data of the Physical Page of newest physical block；
The selection module is used for when the confirmation module, which is confirmed, data is written, in the blank of the 3D flash memory
The best blank physical block of the performance determined in physical block group；
The write module is for the data to be written in the best blank physical block of the performance.
Further, the write module is also used to the corresponding newest physics of logical address when write operation instruction
When data can be written in the Physical Page of block, which is write direct in the Physical Page of the newest physical block.
Further, the selection module includes choosing subelement and contrast subunit；
The blank physical block group for choosing subelement and being used to choose 3D flash memory；
The contrast subunit is used to two blank physical blocks in the blank physical block group carrying out performance parameter pair
Than choosing the preferable blank physical block of performance in described two blank physical blocks and continuing and one in remaining blank physical block
Blank physical block carries out performance parameter comparison, and after comparison is until all blank physical blocks are compared according to this, selection is last
The good blank physical block best as performance of performance parameter in primary comparison.
Further, the selecting system further includes complementary module, and the complementary module is used in the blank physical block
A blank physical block is arbitrarily chosen except group adds to blank physical block group new as one in the blank physical block group,
It is chosen in the new blank physical block group when choosing the best blank physical block of performance next time.
Further, the selecting system further includes logical address writing module, and the logical address writing module is by institute
The physical block of the best corresponding logical block of blank physical block of the performance is written in the block number for stating the best blank physical block of performance
In chain.
Compared with prior art, the present invention beneficial effect is: the choosing method of the 3D flash memory physical block is receiving
To the corresponding newest physical block of logical address that when write operation instruction, the data being written will be needed to write write operation instruction first
Physical Page in, if data cannot be written in the Physical Page of the newest physical block, determined in the block group of blank physical
The best blank physical block of performance carries out write-in data.The choosing method considers each blank object during data are written
The performance of block is managed, so as to reduce the generation of write error, read error, and the correctness for ensuring data of energy maximum magnitude, is subtracted
The workload of light ECC error correction.
Detailed description of the invention
Fig. 1 is the flow diagram of the choosing method for the 3D flash memory physical block that first embodiment of the invention provides；
Fig. 2 is the flow diagram of the choosing method for the 3D flash memory physical block that second embodiment of the invention provides；
Fig. 3 is the structural schematic diagram of the selecting system for the 3D flash memory physical block that third embodiment of the invention provides；
Fig. 4 is the structural schematic diagram of the selecting system for the 3D flash memory physical block that fourth embodiment of the invention provides.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to Fig. 1, Fig. 1 is the process signal of the choosing method for the 3D flash memory physical block that first embodiment of the invention provides
Figure.It mainly comprises the steps that
S101, receive write operation instruction when, confirm the write operation instruction the corresponding newest physical block of logical address
The whether writable data of Physical Page.
When being connected to write operation instruction, preferentially write data into newest corresponding to the logical address of write operation instruction
Physical block Physical Page in.When the Physical Page of the newest physical block is stored with data, other blank objects can only be chosen
Reason page carries out write-in data.
If data S102, cannot be written, the best blank physical of performance is determined in the blank physical block group of 3D flash memory
Block.
Blank physical block group is the set of all blank physical blocks in 3D flash memory, or is also possible to all blank physical blocks
Partial set.For example, m blank physical block can be randomly selected in 3D flash memory as blank physical block group.
The performance parameter of the determination Primary Reference blank physical block production write error of the best blank physical block of performance, that is, exist
The the probability for occur when write operation write error the low better.
S103, it writes data into the best blank physical block of performance.
In the present embodiment, write-in data are carried out by choosing the best blank physical block of performance in the block group of blank physical,
Due to considering the performance of each blank physical block during data are written, so as to reduce write error, read error
Generate, and can maximum magnitude the correctness for ensuring data, mitigate ECC (Error Correcting Code, error checking and
Correct) workload of error correction.
Referring to Fig. 2, Fig. 2 is the process signal of the choosing method for the 3D flash memory physical block that second embodiment of the invention provides
Figure.It mainly comprises the steps that
When S201,3D flash memory receive write operation instruction, confirm that the logical address of write operation instruction is corresponding newest
The whether writable data of the Physical Page of physical block.
When being connected to write operation instruction, preferentially write data into newest corresponding to the logical address of write operation instruction
Physical block Physical Page in.When the Physical Page of the newest physical block is stored with data, other blank objects can only be chosen
Reason page carries out write-in data.
If data S202, can be written, which is write direct in the Physical Page of newest physical block.
If data S203, cannot be written, the blank physical block group of 3D flash memory is chosen.
Blank physical block group is the set of all blank physical blocks in 3D flash memory, or is also possible to all blank physical blocks
Partial set.For example, m blank physical block can be randomly selected in 3D flash memory as blank physical block group.
S204, two blank physical blocks in the block group of blank physical are subjected to performance parameter comparison, choose two blank objects
The preferable blank physical block of performance in block is managed to continue to carry out performance ginseng with a blank physical block in remaining blank physical block
Number comparison, after comparison is until all blank physical blocks are compared according to this, performance parameter is good in selection last time comparison
The blank physical block best as performance.
The performance parameter of the determination Primary Reference blank physical block production write error of the best blank physical block of performance, that is, exist
The the probability for occur when write operation write error the low better.
For example, there is 5 blank physical blocks in the block group of blank physical, respectively blank physical block 1, blank physical block 2, blank
Physical block 3, blank physical block 4 and blank physical block 5.The performance parameter of blank physical block 1 and blank physical block 2 is carried out pair
Than if comparing result is preferable for the performance parameter of blank physical block 2, the performance of blank physical block 2 and blank physical block 3 is joined
Number compares, if comparing result is preferable for the performance parameter of blank physical block 2, continues blank physical block 2 and blank object
The performance parameter of reason block 4 compares, if comparing result is preferable for the performance parameter of blank physical block 4, by blank physical block 4
It compares with the performance parameter of blank physical block 5, if comparing result is preferable for the performance parameter of blank physical block 5, chooses
The blank physical block best as performance in the block group of the blank physical of blank physical block 5.
S205, it writes data into the best blank physical block of the performance for selecting and.
S206, a blank physical block is arbitrarily chosen except the block group of blank physical add to conduct in the block group of blank physical
One new blank physical block group chooses in the blank physical block group of the best blank physical block Shi Xin of performance next time and carries out
It chooses.
Most start to choose blank physical block one blank physical block group of composition that physical block number is 0,1,2 ... n, in n block
In select the blank physical block of one piece of best performance, after selection, then taking physical block number is that the blank physical block of n+1 adds to sky
In white physical block group, selection blank physical block completion blank physical block group for as recycling.So as to ensure all objects
Reason block can use, and frequency of use is similar, and the physical block avoided the occurrence of frequently uses, some physical block free time
Phenomenon.
S207, by the best corresponding logical block of blank physical block of the block number write performance of the best blank physical block of performance
Physical block chain in.
In the present embodiment, write-in data are carried out by choosing the best blank physical block of performance in the block group of blank physical,
Due to considering the performance parameter of each blank physical block during data are written, so as to reduce write error, misread
Generation accidentally, and the correctness for ensuring data of energy maximum magnitude, mitigate the workload of ECC error correction.Meanwhile having chosen performance
After best blank physical block, new blank physical block is supplemented in the block group of blank physical, so as to ensure institute in 3D flash memory
Some physical blocks can use, and frequency of use is similar, avoid the occurrence of part physical block and frequently use, part physical block
Idle phenomenon.
Referring to Fig. 3, Fig. 3 is the structural representation of the selecting system for the 3D flash memory physical block that third embodiment of the invention provides
Figure, for ease of description, only parts related to embodiments of the present invention are shown.The selection of the exemplary 3D flash memory physical block of Fig. 3
System can be the executing subject of the choosing method of the 3D flash memory physical block of previous embodiment offer.The selecting system mainly includes
Confirmation module 301 chooses module 302 and writing module 303.
Confirmation module 301 is used to confirm the logical address of write operation instruction when 3D flash memory receives write operation instruction
The whether writable data of the Physical Page of corresponding newest physical block.
When being connected to write operation instruction, preferentially write data into newest corresponding to the logical address of write operation instruction
Physical block Physical Page in.When the Physical Page of the newest physical block is stored with data, other blank objects can only be chosen
Reason page carries out write-in data.
It chooses module 302 to be used for when confirmation module 301, which is confirmed, data is written, in the blank physical block of 3D flash memory
The best blank physical block of performance is determined in group.
Blank physical block group is the set of all blank physical blocks in 3D flash memory, or is also possible to all blank physical blocks
Partial set.For example, m blank physical block can be randomly selected in 3D flash memory as blank physical block group.
The performance parameter of the determination Primary Reference blank physical block production write error of the best blank physical block of performance, that is, exist
The the probability for occur when write operation write error the low better.
Writing module 303 is for writing data into the best blank physical block of performance.
In the present embodiment, write-in data are carried out by choosing the best blank physical block of performance in the block group of blank physical,
Due to considering the performance of each blank physical block during data are written, so as to reduce write error, read error
Generate, and can maximum magnitude the correctness for ensuring data, mitigate ECC (Error Correcting Code, error checking and
Correct) workload of error correction.
Referring to Fig. 4, Fig. 4 is the structural representation of the selecting system for the 3D flash memory physical block that fourth embodiment of the invention provides
Figure, for ease of description, only parts related to embodiments of the present invention are shown.The selection of the exemplary 3D flash memory physical block of Fig. 4
System can be the executing subject of the choosing method of the 3D flash memory physical block of previous embodiment offer.The selecting system mainly includes
Confirmation module 401 chooses module 402, writing module 403, complementary module 404 and logical address writing module 405.The system with
The something in common of Fig. 3 repeats no more, and difference place is:
The system can further include:
Complementary module 404 adds to blank physical for arbitrarily choosing a blank physical block except the block group of blank physical
The blank physical block group new as one in block group, chooses the blank physical of the best blank physical block Shi Xin of performance next time
It is chosen in block group.
New blank physical block can be replenished in time after the blank physical block for having chosen best performance and arrive for complementary module 404
In the block group of blank physical, so as to ensure that all physical blocks can use, and frequency of use is similar, avoids the occurrence of
A portion physical block frequently uses, the phenomenon of another part physical block free time.
The blank physical that the block number write performance of the best blank physical block of performance is best of logical address writing module 405
In the physical block chain of the corresponding logical block of block.
Writing module 403 is also used to write when the Physical Page of the corresponding newest physical block of logical address of write operation instruction
When entering data, which is write direct in the Physical Page of newest physical block.
It chooses module 402 and specifically includes selection subelement 4021 and contrast subunit 4022.
Choose the blank physical block group that subelement 4021 is used to choose 3D flash memory.
Contrast subunit 4022 is used to carrying out two blank physical blocks in the block group of blank physical into performance parameter comparison, choosing
The preferable blank physical block of performance in two blank physical blocks is taken to continue and a blank physical in remaining blank physical block
Block carries out performance parameter comparison, and after comparison is until all blank physical blocks are compared according to this, selection last time is compared
The good blank physical block best as performance of middle performance parameter.
In the present embodiment, write-in data are carried out by choosing the best blank physical block of performance in the block group of blank physical,
Due to considering the performance parameter of each blank physical block during data are written, so as to reduce write error, misread
Generation accidentally, and the correctness for ensuring data of energy maximum magnitude, mitigate the workload of ECC error correction.Meanwhile having chosen performance
After best blank physical block, new blank physical block is supplemented in the block group of blank physical, so as to ensure institute in 3D flash memory
Some physical blocks can use, and frequency of use is similar, avoid the occurrence of part physical block and frequently use, part physical block
Idle phenomenon.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (8)
1. a kind of choosing method of 3D flash memory physical block, which comprises the following steps:
When receiving write operation instruction, confirm that the Physical Page of the corresponding newest physical block of logical address of write operation instruction is
No writable data；
If data cannot be written, the best blank physical block of performance is determined in the blank physical block group of the 3D flash memory；
The data are written in the best blank physical block of the performance；
The best blank physical block of the performance determined in the blank physical block group of the 3D flash memory specifically includes:
Choose the blank physical block group of 3D flash memory；
Two blank physical blocks in the blank physical block group are subjected to performance parameter comparison, choose described two blank physicals
The preferable blank physical block of performance continues to carry out performance parameter with a blank physical block in remaining blank physical block in block
Comparison, after comparison is until all blank physical blocks are compared according to this, performance parameter is good in selection last time comparison
The blank physical block best as performance.
2. choosing method according to claim 1, which is characterized in that if the logical address of write operation instruction is corresponding
Data can be written in the Physical Page of newest physical block, then write direct the data in the Physical Page of the newest physical block.
3. choosing method according to claim 1, which is characterized in that also wrapped after determining the best blank physical block of performance
It includes:
A blank physical block is arbitrarily chosen except the blank physical block group adds to conduct in the blank physical block group
One new blank physical block group, when choosing the best blank physical block of performance next time in the new blank physical block group
It is chosen.
4. choosing method according to claim 1, which is characterized in that the method also includes:
The best corresponding logical block of blank physical block of the performance is written into the block number of the best blank physical block of the performance
Physical block chain in.
5. a kind of selecting system of 3D flash memory physical block, which is characterized in that including confirmation module, choose module and writing module；
The confirmation module is used to confirm when receiving write operation instruction that the logical address of write operation instruction to be corresponding newest
Physical block the whether writable data of Physical Page；
The selection module is used for when the confirmation module, which is confirmed, data is written, in the blank physical of the 3D flash memory
The best blank physical block of the performance determined in block group；
The write module is for the data to be written in the best blank physical block of the performance；
The selection module includes choosing subelement and contrast subunit；
The blank physical block group for choosing subelement and being used to choose 3D flash memory；
The contrast subunit is used to carrying out two blank physical blocks in the blank physical block group into performance parameter comparison, choosing
The preferable blank physical block of performance in described two blank physical blocks is taken to continue and a blank in remaining blank physical block
Physical block carries out performance parameter comparison, after comparison is until all blank physical blocks are compared according to this, selection last time
The good blank physical block best as performance of performance parameter in comparison.
6. selecting system according to claim 5, which is characterized in that the write module is also used to refer to when the write operation
When data can be written in the Physical Page of the corresponding newest physical block of the logical address of order, which is write direct described newest
In the Physical Page of physical block.
7. selecting system according to claim 5, which is characterized in that the selecting system further includes complementary module, described
Complementary module adds to the blank physical block for arbitrarily choosing a blank physical block except the blank physical block group
The blank physical block group new as one in group, next time in the new blank object when the best blank physical block of selection performance
It is chosen in reason block group.
8. selecting system according to claim 5, which is characterized in that the selecting system further includes logical address write-in mould
The best blank of the performance is written in the block number of the best blank physical block of the performance by block, the logical address writing module
In the physical block chain of the corresponding logical block of physical block.
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| CN106484629B (en) * | 2016-10-18 | 2019-06-25 | 深圳大学 | A kind of three-dimensional flash memory read/writing control method and its system perceiving process variation |
| CN106528446B (en) * | 2016-11-17 | 2019-08-23 | 深圳市先天海量信息技术有限公司 | The control method and control system of flash data |
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