CN105977216B - 一种小型化气密性无引线陶瓷封装结构 - Google Patents
一种小型化气密性无引线陶瓷封装结构 Download PDFInfo
- Publication number
- CN105977216B CN105977216B CN201610535293.2A CN201610535293A CN105977216B CN 105977216 B CN105977216 B CN 105977216B CN 201610535293 A CN201610535293 A CN 201610535293A CN 105977216 B CN105977216 B CN 105977216B
- Authority
- CN
- China
- Prior art keywords
- layer
- ceramic
- ceramic layer
- bonding
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
Abstract
本发明公开了小型化气密性无引线陶瓷封装结构,包括陶瓷外壳(1)、粘片胶(2)、硅片(3)、键合丝(4)和盖板(5);陶瓷外壳(1)包括陶瓷层(11)和金属化层(12),所述陶瓷层(11)为腔体结构,硅片(3)通过粘片胶(2)安装在所述腔体结构底部的粘芯区,陶瓷层(11)包括上陶瓷层(112)和下陶瓷层(111),金属化层(12)包括封口环(125)和焊盘层(121),封口环(125)、上陶瓷层(112)、下陶瓷层(111)和焊盘层(121)从上往下依次设置,盖板(5)设置在封口环(125)的顶部,下陶瓷层(111)的侧壁设有半圆孔(1110),键合丝(4)用于连接硅片(3)与金属化层(12)。本发明比现有气密性无引线封装的外形更小。
Description
技术领域
本发明涉及集成电路陶瓷封装技术领域,特别是涉及一种小型化气密性无引线陶瓷封装结构。
背景技术
在集成电路封装技术领域,陶瓷封装在力学性能、湿气渗透和热性能等方面优于塑料封装。但是相对塑料封装来说,因陶瓷封装结构的原因,陶瓷封装往往比塑料封装的大。在部分应用场景,可采用高可靠性的塑料封装也可采用陶瓷封装,为降低产品生产成本,往往需要塑料封装焊盘与陶瓷封装焊盘兼容,从而共用一套PCB板。小型化封装的主要代表为QFN,对应陶瓷封装为CLCC封装。
为实现小型化,我们常优化封口环的宽度W2,但需保证器件的气密性,盖板与封口环的重叠宽度不低于0.35mm;且封口环边缘需有一焊料流淌区,其宽度W3约为盖板的厚度,一般盖板厚度为0.25mm,则w3为0.25mm;优化键合指的长度,为保证绑定的可行性,要求匹配键合指离封口环的距离与键合指长度W1,这样劈刀才能可靠的绑定金线。
如图1所示,现有接地的作法为:在陶瓷底部安装一散热片,散热片内嵌于下陶瓷中。接地时,将接地信号直接绑定到热沉上。这样要求硅片边缘到粘芯区内壁的距离L为1.1-1.5mm。
常规气密性封装为:采用陶瓷外壳并使用金锡合金(Au80Sn20)将盖板安装在陶瓷外壳顶部。适用于高可靠陶封应用领域,如军事领域,汽车电子领域。
发明内容
本发明的目的在于克服现有技术的不足,提供一种小型化气密性无引线陶瓷封装结构,与现有气密性无引线封装相比,其外形更小,极大的克服了陶封与塑封的兼容问题。
本发明的目的是通过以下技术方案来实现的:一种小型化气密性无引线陶瓷封装结构,包括陶瓷外壳、粘片胶、硅片、键合丝和盖板;所述陶瓷外壳包括陶瓷层和金属化层,所述陶瓷层为腔体结构,硅片通过粘片胶安装在所述腔体结构底部的粘芯区,所述陶瓷层包括上陶瓷层和下陶瓷层,所述金属化层包括封口环和焊盘层,所述封口环、上陶瓷层、下陶瓷层和焊盘层从上往下依次设置,盖板设置在封口环的顶部,下陶瓷层的侧壁设有半圆孔,键合丝用于连接硅片与金属化层。
所述下陶瓷层包括从下往上依次设置的第一陶瓷层、第二陶瓷层和第三陶瓷层。
所述上陶瓷层和下陶瓷层的俯视图均为矩形状,下陶瓷层的长宽小于上陶瓷的长宽。
所述上陶瓷层底部设计有倒角结构。
所述金属化层还包括键合指层和金属过孔,键合指层包括接地键合指和信号键合指。
所述接地键合指通过键合丝与硅片连接。
所述焊盘层包括接地焊盘和信号焊盘,所述接地键合指通过金属过孔与接地焊盘连接,所述信号键合指通过半圆孔与信号焊盘连接。
本发明的有益效果是:
(1)与常规气密性无引线封装相比,本发明的外形更小,外形尺寸可缩小3mm左右,极大的提高了陶封与塑封的兼容问题,对于引脚节距(pith)为0.5mm的QFN封装,最小可实现QFN24,外形4×4mm的完全兼容;
(2)本发明在外形很小的情况下,具有优良的板极安装优势,半圆孔可提高板极安装可靠性。
附图说明
图1为现有陶瓷封装结构轴测图;
图2为本发明小型化气密性无引线陶瓷封装结构的示意图;
图3为焊盘层的示意图;
图4为图3中焊盘层的剖视图;
图中,1-陶瓷外壳,2-粘片胶,3-硅片,4-键合丝,5-盖板,11-陶瓷层,111-下陶瓷层,1110-半圆孔,1111-第一陶瓷层,1112-第二陶瓷层,1113-第三陶瓷层,112-上陶瓷层,1120-倒角结构,12-金属化层,120-金属过孔,121-焊盘层,1211-信号焊盘,1212-接地焊盘,122-第一金属层,123-第二金属层,124-键合指层,1241-信号键合指,1242-接地键合指,125-封口环。
具体实施方式
下面结合附图进一步详细描述本发明的技术方案,但本发明的保护范围不局限于以下所述。
如图2、图3和图4所示,一种小型化气密性无引线陶瓷封装结构,包括陶瓷外壳1、粘片胶2、硅片3、键合丝4和盖板5;所述陶瓷外壳1包括陶瓷层11和金属化层12,所述陶瓷层11为腔体结构,硅片3通过粘片胶2安装在所述腔体结构底部的粘芯区。
所述陶瓷层11包括上陶瓷层112和下陶瓷层111,所述下陶瓷层111为多层陶瓷结构,下陶瓷层111包括从下往上依次设置的第一陶瓷层1111、第二陶瓷层1112和第三陶瓷层1113。
所述金属化层12包括焊盘层121、第一金属层122、第二金属层123、键合指层124、封口环125和金属过孔120,所述键合指层124包括接地键合指1242和信号键合指1241。
所述封口环125、上陶瓷层112、下陶瓷层111和焊盘层121从上往下依次设置,盖板5设置在封口环125的顶部,下陶瓷层111的侧壁设有半圆孔(半月槽城堡结构)1110,键合丝4用于连接硅片3与金属化层12。
所述上陶瓷层112和下陶瓷层111的俯视图均为矩形状,下陶瓷层111的长宽小于上陶瓷的长宽。
所述上陶瓷层112底部设计有倒角结构1120。
所述接地键合指1242通过键合丝4与硅片3连接。
所述第一金属层位于第一陶瓷层和第二陶瓷层之间,第二金属层位于第二陶瓷层和第三陶瓷层之间。
所述焊盘层121包括接地焊盘1212和信号焊盘1211,所述接地键合指1242通过金属过孔120与接地焊盘1212连接,所述信号键合指1241通过半圆孔1110与信号焊盘1211连接。
本发明中半圆孔1110不贯穿整个陶瓷外壳1(降低半圆孔1110的高度),并将下陶瓷层111向封装中心内移W,这样焊盘层121的信号焊盘1211可内移,缩小板极安装的焊盘尺寸;陶瓷外壳1顶部无半圆孔1110后,这样可以缩小封口环125宽度w2,充分利用封口环125。下陶瓷层111可向封装中心内移0.2-0.5mm,从而可以使得板极安装焊盘外形X与Y缩小1mm。
本发明接地的方法为:将内部的地信号绑定到接地键合指1242,接地键合指1242通过金属过孔120连接到封装背面的接地焊盘1212,这样可以提高粘芯区的利用率。采用本发明的做法时,只需要求硅片3边缘到粘芯区内壁的距离L为0.2mm以上,这样封装体外形X与Y可缩小2mm。
综上所述,本发明的外形尺寸可缩小3mm以上,CLCC24可实现与QFN24的焊盘可实现无缝兼容。
以上所述仅是本发明的优选实施方式,应当理解本发明并非局限于本文所披露的形式,不应看作是对其他实施例的排除,而可用于各种其他组合、修改和环境,并能够在本文所述构想范围内,通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本发明的精神和范围,则都应在本发明所附权利要求的保护范围内。
Claims (6)
1.一种小型化气密性无引线陶瓷封装结构,其特征在于:包括陶瓷外壳(1)、粘片胶(2)、硅片(3)、键合丝(4)和盖板(5);所述陶瓷外壳(1)包括陶瓷层(11)和金属化层(12),所述陶瓷层(11)为腔体结构,硅片(3)通过粘片胶(2)安装在所述腔体结构底部的粘芯区,所述陶瓷层(11)包括上陶瓷层(112)和下陶瓷层(111),所述金属化层(12)包括封口环(125)和焊盘层(121),所述封口环(125)、上陶瓷层(112)、下陶瓷层(111)和焊盘层(121)从上往下依次设置,盖板(5)设置在封口环(125)的顶部,下陶瓷层(111)的侧壁设有半圆孔(1110),键合丝(4)用于连接硅片(3)与金属化层(12),所述上陶瓷层(112)和下陶瓷层(111)的俯视图均为矩形状,下陶瓷层(111)的长宽小于上陶瓷的长宽。
2.根据权利要求1所述的一种小型化气密性无引线陶瓷封装结构,其特征在于:所述下陶瓷层(111)包括从下往上依次设置的第一陶瓷层(1111)、第二陶瓷层(1112)和第三陶瓷层(1113)。
3.根据权利要求1所述的一种小型化气密性无引线陶瓷封装结构,其特征在于:所述上陶瓷层(112)底部设计有倒角结构(1120)。
4.根据权利要求1所述的一种小型化气密性无引线陶瓷封装结构,其特征在于:所述金属化层(12)还包括键合指层(124)和金属过孔(120),键合指层(124)包括接地键合指(1242)和信号键合指(1241)。
5.根据权利要求4所述的一种小型化气密性无引线陶瓷封装结构,其特征在于:所述接地键合指(1242)通过键合丝(4)与硅片(3)连接。
6.根据权利要求4所述的一种小型化气密性无引线陶瓷封装结构,其特征在于:所述焊盘层(121)包括接地焊盘(1212)和信号焊盘(1211),所述接地键合指(1242)通过金属过孔(120)与接地焊盘(1212)连接,所述信号键合指(1241)通过半圆孔(1110)与信号焊盘(1211)连接。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610535293.2A CN105977216B (zh) | 2016-07-08 | 2016-07-08 | 一种小型化气密性无引线陶瓷封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610535293.2A CN105977216B (zh) | 2016-07-08 | 2016-07-08 | 一种小型化气密性无引线陶瓷封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105977216A CN105977216A (zh) | 2016-09-28 |
CN105977216B true CN105977216B (zh) | 2019-03-15 |
Family
ID=56951310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610535293.2A Active CN105977216B (zh) | 2016-07-08 | 2016-07-08 | 一种小型化气密性无引线陶瓷封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105977216B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106788319B (zh) * | 2016-12-15 | 2020-12-11 | 广东大普通信技术有限公司 | 小型化smd晶体振荡器 |
CN107658270B (zh) * | 2017-10-13 | 2020-06-30 | 中国电子科技集团公司第十三研究所 | 电源转换器用陶瓷外壳 |
-
2016
- 2016-07-08 CN CN201610535293.2A patent/CN105977216B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105977216A (zh) | 2016-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100809693B1 (ko) | 하부 반도체 칩에 대한 신뢰도가 개선된 수직 적층형멀티칩 패키지 및 그 제조방법 | |
US8058720B2 (en) | Semiconductor package | |
JP2020515076A (ja) | 超小型電子アセンブリの封止 | |
CN104600054B (zh) | 使用低温过程的高温半导体器件封装和结构的方法及装置 | |
TWI552235B (zh) | Semiconductor device, semiconductor device manufacturing method | |
TWI333264B (en) | Packaging structure and method of mems microphone | |
JPS61218139A (ja) | 半導体装置 | |
CN103165562A (zh) | 无引线封装半导体器件 | |
KR102231769B1 (ko) | 고열전도를 위한 히트싱크 노출형 반도체 패키지 및 그 제조방법 | |
KR101574135B1 (ko) | 칩 실장 방법 및 칩 패키지 | |
US11128268B1 (en) | Power amplifier packages containing peripherally-encapsulated dies and methods for the fabrication thereof | |
US7564123B1 (en) | Semiconductor package with fastened leads | |
CN104299948B (zh) | 具有芯片贴装焊盘的腔体封装 | |
US20070054484A1 (en) | Method for fabricating semiconductor packages | |
CN104103617B (zh) | 多层半导体封装 | |
CN105977216B (zh) | 一种小型化气密性无引线陶瓷封装结构 | |
TWI587413B (zh) | 引線框架上的焊料阻流塞 | |
US20080150106A1 (en) | Inverted lf in substrate | |
JP2005167129A (ja) | 電子素子パッケージおよび電子素子パッケージの製造方法 | |
CN205789921U (zh) | 一种小型化气密性无引线陶瓷封装结构 | |
CN204289421U (zh) | 气密性双腔封装结构 | |
US9064838B2 (en) | Heat spreader for integrated circuit device | |
CN209497436U (zh) | 一种滤波器的堆叠式封装结构 | |
CN109427698A (zh) | 组装qfp型半导体器件的方法 | |
CN102543910A (zh) | 芯片封装件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |