CN105940504B - Use the plater for solar cell substrate of both plating and photoinduction plating - Google Patents
Use the plater for solar cell substrate of both plating and photoinduction plating Download PDFInfo
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- CN105940504B CN105940504B CN201580006055.6A CN201580006055A CN105940504B CN 105940504 B CN105940504 B CN 105940504B CN 201580006055 A CN201580006055 A CN 201580006055A CN 105940504 B CN105940504 B CN 105940504B
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- 238000007747 plating Methods 0.000 title claims abstract description 154
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 238000000576 coating method Methods 0.000 claims abstract description 56
- 239000011248 coating agent Substances 0.000 claims abstract description 52
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 239000000243 solution Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 13
- 239000000126 substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- XBVSGJGMWSKAKL-UHFFFAOYSA-N 1,3,5-trichloro-2-(3,5-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(C=2C(=CC(Cl)=CC=2Cl)Cl)=C1 XBVSGJGMWSKAKL-UHFFFAOYSA-N 0.000 description 4
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- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- 239000004425 Makrolon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
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- 241000235388 Mucorales Species 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to a kind of plater for solar cell substrate, the plater, which is directed to, to be submerged as the section of chip to be coated and uses plating and photoinduction plating.Included according to the plater (100) of the present invention：Substrate holder (130), the substrate holder (130) is arranged on above plating groove, the edge of the chip (1) in the plating groove will be flatly immersed in along upper end (132) supporting of the substrate holder (130), and as making the outlet that coating solution is penetrated into the section of the chip；First plating unit (10), first plating unit (10) performs plating by being arranged on the positive electrode component (190) at the bottom of plating groove to chip (1)；Second plating unit (20), second plating unit (20) is located in the plating groove between positive electrode component (190) and chip (1), wherein, multiple light sources (122) for transmitting light towards the chip (1) are arranged on a horizontal while being sealed in coating solution, and perform photoinduction plating；And solution driver element (40), the solution driver element (40) makes coating solution be overflowed by upper squit hole (133) in substrate holder (130) by stirring coating solution.
Description
Technical field
The present invention relates to a kind of plater for being used to form circuit on silicon wafer substrate when manufacturing solar cell
(plating device), and more particularly, to a kind of plater using photoinduction plating (LIP) technology.
Background technology
In order to manufacture solar cell, it should form circuit in substrate wafer.Circuit Formation Technology can be classified as
Conventional screen printing process and coating method.Method for printing screen is the printing process using silver paste, but is due to rising
Silver-colored (Ag) price and the problem of with cost competitiveness, and due also to by such as constitute silver paste and bead adhesive this
The deterioration of electrical conductivity caused by the foreign substance of sample and in terms of power conversion efficiency have limitation.Therefore, recently, a direct product
Polar region carries out the research to the method using plating.
Because plating is difficult when crystal seed layer (seed layer) is not formed on chip, it requires in advance in crystalline substance
Conductive layer is formed on piece for electroplating work procedure.Therefore, being performed after plating process is completed using photoinduction plating main
The situation of plating has become well-known.However, this process is executed independently respectively in single device, and therefore
The reason for as cost and time is increased.
The present inventor discloses No.10-2013-0084373 by Korean Patent Laid and discloses a kind of using electricity
Plating and the plater of photoinduction plating.Patent document is related to a kind of used on two surfaces of substrate and electroplated and photoinduction
The method of plating, but what the positive electrode component for being used for plating in the presence of the light sent from the light source for photoinduction plating was blocked
Problem.That is, the problem of appearance can not keep the amount of the light received on a surface of the wafer.Above-mentioned patent text
Offer and employ mechanical driving mechanism to solve these problems.However, there is following limitation：When without using this mechanism or
Person will be when its single surface will be plated rather than be carried out plating to two surfaces, the solution party of above-mentioned patent document
Case is difficult with.
The present inventor completes the present invention after long-term research is carried out, described special to solve and improve
These problems of sharp document.
The content of the invention
Technical problem
Photoinduction can be used by providing one kind during the invention aims to carry out plating on the single surface to chip
Coating method come efficiently perform electroless while perform referred to as plating electrolytic coating device.
It is another object of the present invention in order to provide it is a kind of can be substantially when carrying out plating to the single surface of chip
Prevent probably due to not requiring that the rear surface of the chip of plating is immersed in the electrical power conversion effect produced in coating solution
The solution of the reduction of rate.By this point so that can be used as producing device in batches according to the plater of the present invention,
And it therefore can further improve the economic feasibility of solar cell.
Do not described in this specification from the aspect of the effect that can be provided in the scope of the present invention and its in the following description
Other purposes.
Technical solution
To achieve these goals, embodiments of the present invention provide a kind of plating for solar cell substrate and filled
Put, the plater is directed to the chip being submerged as object to be coated and single surface and uses plating and photoinduction plating
Cover, the plater includes：Substrate erecting bed, the substrate erecting bed is disposed in above plating groove, is pacified along the substrate
The upper end supporting of dress platform is flatly immersed in the edge of the chip in the plating groove, and is used as being used for the crystalline substance
The outlet of the coating solution of the single surface submergence of piece；First plating unit, first plating unit passes through installed in institute
The positive electrode component in the bottom of plating groove is stated to perform plating to the chip；Second plating unit, second plating unit
In the plating groove between the positive electrode component and the chip, with the coating solution is sealed in
The direction chip being arranged on simultaneously according to level matrix shape on second plating unit transmits the multiple light sources of light, and
And perform photoinduction plating；And solution driver element, the solution driver element is for stirring the coating solution so that described
Solution is overflowed by the upper squit hole of the substrate erecting bed.
In certain embodiments, can using the plater for solar cell substrate of plating and photoinduction plating
Formed with the upper end for being configured such that the substrate erecting bed according to uneven shape, by peak dot to support
Chip is stated, the coating solution of spilling is again returned to by the gap between valley point and the peak dot.
In another embodiment, using plating and photoinduction plating the plater for solar cell substrate also
Transparent shielding film (shielding membrane) can be included, the Transparent shielding film is horizontally located at second plating unit
The light source and the substrate erecting bed between, be arranged to be immersed in the coating solution, and with by rule between
Every the hole of formation.
In yet another embodiment, using plating and photoinduction plating the plater for solar cell substrate also
Electrode pin module can be included, the electrode pin module forms conductive part on the wafer, wherein, the electrode pin mould
Block forms electric contact in each in the upper and lower surface of the chip.
In another embodiment, in the plater for solar cell substrate using plating and photoinduction plating
In, the controller of the plater can control the plater in such a way：So that second plating unit
Operated first to form conductive seed on the surface of the chip, then the light source of second plating unit is closed
It is unlocked with the light source that plating or second plating unit are performed by first plating unit to be plated with photoinduction
Cover and perform plating together.
Beneficial effect
According to the present invention, because can be in single plater and by single plating process sequentially or simultaneously
LIP types plating and plating are performed, so in the presence of the effect that time and cost are reduced when manufacturing solar cell.
, may be because because can substantially prevent in addition, when carrying out plating to the single surface of solar cell wafer
The rear surface of chip not require plating is immersed in the reduction of the power conversion efficiency produced in coating solution, so can
Further to improve the economic feasibility as the solar cell substrate plater of Large Copacity production equipment.
Although not describing in detail in the present invention, it is nevertheless contemplated that by the technical characteristic of the present invention with common and temporary
The effect for determining effect can be considered as the effect described in this specification.
Brief description of the drawings
Fig. 1 is the schematic diagram of the configuration example of the plating system exemplified with the present invention.
Fig. 2 is the schematic diagram of the configuration of the plater 100 exemplified with the illustrative examples according to the present invention.
Fig. 3 is the transparent screen being flatly immersed in coating solution in the illustrative embodiments exemplified with the present invention
Cover the view of the configuration example of film 140.
Fig. 4 is exemplified with the alignment of internal light source reception pipe 120 when Fig. 2 viewed from above plater 100 and matched somebody with somebody
The view put.
Fig. 5 is the view of the configuration example of the upper end exemplified with the substrate erecting bed 130 in embodiments of the present invention.
Fig. 6 is the configuration exemplified with the plater 100 as batch production systems according to the embodiment of the present invention
The view of example.
It should be noted that accompanying drawing is exemplified as the reference of the inventive concept for understanding the present invention, and the present invention
The scope not limited to this of authority.
Embodiment
In the following description of the present invention, the known function and the detailed of configuration that will be apparent to those skilled in the art are retouched
Stating will be removed when it may unnecessarily make subject of the present invention become not knowing quite.
As exemplified in figure 1, plater of the invention includes being divided into the first plating unit 10 and the second plating list
Two kinds of platers of member 20.In addition, be provided with computer program, by computer and control solution operate control
The selectivity operation or concurrent operations and accurate mechanically actuated in the control plating of device 30 portion 10 and 20.Specifically, when the first plating
When covering unit 10 and being operated, controller 30 controls to be connected to the operation of the pump 40 of motor so that coating solution in plating groove
Injection and stirring are performed in scope of design.Although not shown in accompanying drawing, but will further provide predetermined power supply and electricity
The configuration of controller.
First plating unit 10 refers to the electrolytic coating element for performing conventional electro plating device.Second plating unit
20 include the LED for performing photoinduction plating (LIP).
Fig. 2 is the schematic diagram of the configuration of the plater 100 exemplified with the illustrative examples according to the present invention.In order to notable
The main configuration of ground expression, without illustration electrical wiring, electric device, the pin for forming electrode plating in the accompanying drawings, for making to draw
The guider that pin is fixed and positioned and the device for clamping and moving chip.Because these configurations can be used pair
Obvious technology for those skilled in the art, even and if there is improved function respectively, these functions are also come freely
The claimed protection domain of the inventive concept of the present invention.
In the plater 100 of the present invention, one or more unit platers are aligned (for example, referring to Fig. 6).
Coating solution 199 is comprised in plater 100, and some parts of plater 100 are located in coating solution 199,
And the other parts of the plater are located at outside coating solution 199.Second plating unit 20 is totally submerged inside coating solution
In 199.
Second plating unit 20 be configured as in vertical direction in the central part of plater 100 with the first plating list
Member 10 is isolated for physically, and light source 122 is installed in multiple bar-like light source reception pipes 120.Preferably, light source can be with
It is LED.Light source 122 can be electrically connected to Power Supply Assembly 125 in an end of light source reception pipe 120.
Preferably, it should prevent light source 122 from being contacted with coating solution, and therefore light source reception pipe is preferably configured to
Seal pipe.Light source 122 is located in the pipe.In addition, constant light to be delivered evenly to the function of chip 1 in order to perform, light source connects
Closed tube 120 is made of clear material.Preferably, in order that the influence to the transmission of light is minimized, such as glass, reinforcing glass are used
Glass, makrolon, PVC or transparent material as acryl, and use the material with chemical-resistance.In addition,
In their longitudinal direction end of light source reception pipe 120, the lid that can open can be installed to be out of order in LED or
Maintenance is performed during damage and is changed.In addition, in order to prevent plating chemicals to be introduced in light source reception pipe 120, can be in light
O-ring is installed in unlatching/close portion of source reception pipe 120.Here, by such as fluorubber (Viton), soft polypropylene, soft poly- second
The O-ring that alkene and the such material with chemical-resistance of soft rubber are made is used, and can therefore prevent from introducing plating
Cover chemicals.
In addition, in a preferred embodiment of the invention, in order to easily install and manage multiple light sources 122, LED quilt
It is preferably arranged as abreast aliging on PCB 121.In addition, PCB 121 can be pellucidly sealed in light source reception pipe
Alignd again in the horizontal direction vertical with lamp alignment direction in the state of in 120.That is, light source 122 is being sealed
In the state of installed according to level matrix.
First plating unit 10 is located above the second plating unit 20.Although the substrate erecting bed 130 in top is located at plating
Cover outside solution 199, but chip 1 is positioned on substrate erecting bed 130, then the plating in the central part below the chip 1
When covering solution 199 and being sprayed upwards via stirring nozzle 151 by the operation of pump 110, substrate erecting bed 130 can be made to be immersed into plating
Cover in solution 199, until the part close to uneven upper end 132.I.e. it is capable to pass through the first plating unit 10
Operation the coating solution received in the plating groove of the plater 100 of the present invention is dynamically changed in the central part of groove
Thing position (level).Because coating solution is stirred according to the direction indicated by the arrow shown in accompanying drawing.
The shape of stirring nozzle 151 in accompanying drawing is to illustrate for convenience of description, and can be used with each
Plant the nozzle arrangement of shape.Preferably, injector nozzle component can be used.Therefore, when chip 1 is positioned in substrate erecting bed
, can be by making thing position rise of the coating solution 199 at position corresponding with chip after positioning improve plating when on 130
The efficiency of device.Being performed as the pump 110 and stirring nozzle 151 of solution drive division makes coating solution towards substrate erecting bed 130
Upper squit hole 133 overflow function.
First plating unit 10 is included in face of the negative electrode in the top of plater 100 on chip by cloth
Put the positive electrode component 190 in the bottom of plating unit 100.Positive electrode 190, which is at regularly spaced, to be abreast arranged.As above
It is described, the position of light source 122 is installed and is located between positive electrode 190 and chip 1, and therefore, the luminous energy sent from light source 122
The surface for the chip 1 for wanting plating is enough evenly transferred to, without being disturbed by other components.
Further, it is possible to use four screws 170 are placed with chip 1 to be adjusted according to the thing of coating solution position for adjusting
The height of the height of position and the wafer guide part 160 of horizontal level.It is installed to be the guiding protruded towards substrate erecting bed 130
Device (not shown) is located in central part so that when chip 1 is placed on substrate erecting bed 130, chip 1 will not be flatly
Or be vertically movable.Contact, and draw with chip 1 at multiple points on long side of the guider on the four direction of chip 1
Chip 1 is led so as not to out of position.Screw 170 determines that wafer guide part 160 is vertical in wafer guide part support 150
Position.
Fig. 4 is exemplified with the light source 122 that the second plating unit is constituted when Fig. 2 viewed from above unit plater 100
Mounting structure.The inside of the upper end 132 of substrate erecting bed 130 is open area 133, and is watched in the open area
To the light source 122 being immersed in coating solution 199.Open area 133 is used as spraying coating solution so that chip 1
The upper squit hole of the outlet of single surface submergence.That is, substrate erecting bed 130 is used for supporting chip, and also it is used for inciting somebody to action
Coating solution is supplied to the single surface of chip.
As described above, light source 122 is abreast arranged on bar-like light source PCB 121, and light source PCB 121 is sealed
In the light source reception pipe 120 being made up of above-mentioned transparent material.In addition, as illustrated in, light source reception pipe 120 is by rule
Align therefore to form the matrix of light source 122 in the horizontal direction in interval, as a result, can be with uniform light come emissive wafer.It is brilliant
Piece will be positioned on substrate erecting bed 130, and the surface of chip will almost cover whole open area 133, and the end of chip
Face is positioned along the uneven upper end 132 of substrate erecting bed 130.
In figure 3, in an exemplary embodiment of the present invention embodiment, Transparent shielding can be installed inside plater 100
Film 140.This is in order to ensure the uniformity of the metal coating of plating on object to be coated.Due to during electroplating work procedure
The drift in the magnetic field of generation, it is possible to create current convergence is in corner and the phenomenon of edge part.Screened film 140 can be helped partly
Prevent electric current from flowing through.This screened film 140 can be by using transparent material as such as makrolon, PVC or acryl
Expect to be made, and adjust on the positive electrode 190 on the surface of chip 1 and as the solar cell of object to be coated
The drift of generation.In addition, multiple holes 141 are arranged in screened film 140, and therefore, the coating solution warp risen from below
Via 141 with towards the single surface of chip 1 move.Therefore, this helps to adjust the plating being stirred to a certain extent molten
The speed of liquid.
Fig. 5 schematically illustrates the configuration of the substrate erecting bed 130 in the illustrative embodiments of the present invention.Substrate is pacified
Filling the structure of platform 130 preferably has the upper end diameter hat shaped smaller than lower end diameter.Specifically, when watching in cross section
When, the cylindrical portion 131 of substrate erecting bed 130 can have the slope according to almost straight line, and formation has towards its upper end
The shape for the width that portion is gradually reduced.Chip 1 is positioned on the upper end of substrate erecting bed 130.Fig. 5 (a) schematically examples
Show this configuration of substrate erecting bed 130, and specifically, Fig. 5 (b) is exemplified with the part A's of uneven upper end 132
Zoomed-in view.Part 132 in the embodiment of reference picture 5, Fig. 4 embodiment can also according to Fig. 5 part 132 shape
Shape is formed.
As illustrated in accompanying drawing, the upper end of substrate erecting bed 130 according to an illustrative embodiment of the invention is pressed
Formed according to uneven shape.Preferably, uneven the uneven of upper end 132 can be configured to V-shape.When placed
During chip 1, the peak dot 132a of the uneven upper end 132 of substrate erecting bed 130 can support chip 1 on four direction
Sidepiece.According to this configuration, when chip 1 is positioned on substrate erecting bed 130, as uneven part is from peak dot
In 132a to valley point 132b both direction tilt and there may be gap.The present invention is expressly technically formed along chip
These gaps that 1 sidepiece is produced.Preferably keep the uneven width of uneven upper end 132.
As described above, when performing plating, the coating solution in plating groove is stirred, and specifically, coating solution exists
It is positioned near the central part of chip 1 and rises.Preferably, coating solution is risen by above-mentioned screened film 140, and
At this moment the coating solution risen submerges only the single surface of chip 1, and should be applied evenly.Such as Fig. 5 (b) institutes
Illustrate, coating solution overflow may due to uneven upper end 132 shape and in all directions by being formed in crystalline substance
Gap between piece 1 and substrate erecting bed 130 is flowed downwardly into plating groove naturally along arrow.It therefore, it can equably
The thing position of coating solution is kept, and can suitably reduce the speed of spilling.By this configuration, can solve the problem that chip 1 by
To the tension force for rising solution is damaged, coating solution diffuses to other side surfaces or produces the technical problem of uneven plating.
By above description, the internal structure of unit plater of the invention can be by ability with the technical characteristic configured
Field technique personnel understand.In the batch production systems of inventive concept of the present invention are realized, by the same of a shared plating groove
When multiple unit platers are installed.Fig. 6 is provided with schematically illustrating in terms of the batch production according to the present invention's
The structure of plater 100.
Coating solution 199 is received in plating groove, and the coating module 180 of unit plater is at regularly spaced side by side
Ground is arranged.In addition, chip 1 is respectively loaded on coating module.In figure 6, for convenience of description, loading chip is not illustrated
1 and perform the device and component described above of plating.Because the former is aobvious and easy to those skilled in the art
The level seen can use known device, and the latter is removed to avoid repeated description.
The configuration of each coating module 180 is identical with configuration described above.Chip 1 is simultaneously or consecutively loaded
On each substrate erecting bed 130, and by pump below chip 1 simultaneously or consecutively produce coating solution spilling.
Furthermore, it is possible to which the operation by the second plating portion simultaneously or consecutively performs photoinduction plating.
Hereinafter, the coating method using plater will be described.
In a preferred embodiment, first, LIP coating methods are performed by the second plating unit 20, then can made
Plating is performed with the first plating unit 10.In the electroplating work procedure of solar cell wafer, crystal seed layer is preferably formed in crystalline substance
On the surface of piece 1, to obtain the consistent applicability and excellent layer-to-layer adhesion of film.Therefore, performing photoinduction plating so that lean on
The LED light source 122 of the centralized positioning of nearly plating groove is unlocked, then use up radiate as object to be coated and its
The chip 1 that single surface is flatly submerged.Therefore, crystal seed layer formation is on the single surface of chip 1, and therefore improves
The electrical conductivity of wafer surface.
Then, by using the positive electrode component 190 below LED come the list of the chip 1 to being formed with crystal seed layer
The surface on individual surface performs plating or photoinduction plating.Therefore, it is possible to perform effective plating operation in single dispatching device.
For example, controller first turns on the light source of the second plating unit to form conductive seed on a surface of the wafer, it is then shut off
The light source in the second plating portion, and may then pass through the first plating unit to perform plating or hold while light source is opened
Row plating.The latter is photoinduction plating.In the plater of the present invention, single face plating, photoinduction plating can be performed simultaneously
Cover and photoinduction plating.
Wafer electroplating process can be controlled by being connected to the controller of the plater of the present invention so that LIP plating and electricity
Plating or photoinduction plating are sequentially executed according to this, and controller can also control the component of plater so that LIP plating
It is performed simultaneously with photoinduction plating.
In addition, in accordance with the invention it is possible to by the way that the single surface of chip is immersed in the case of without mask process
Electroplated in the top of plating groove come two surfaces to chip.I.e. it is capable in the case of without mask process
Following product is produced by simplified process：The product is can be (all by performing plating process twice in conventional equipment
Such as, preceding surface mask process → rear coating surface → preceding surface mask process separation → preceding coating surface → rear surface mask process
Separation) and complete.
In addition, when the single surface submergence for chip 1 operates coating module 180 of the invention described above
During the first plating unit 10, with for conductive electrical contact.However, in the presence of may be led due to the buoyancy of coating solution under
Discontiguous situation occurs between electric portion and chip, and this performance to electrolytic coating applies bad influence.For realizing this
In the illustrative embodiments of a bit, it can be further provided in electrode pin module for being formed on the upper surface of chip
The upper conductive part of electric contact.By the weight of upper conductive part, can prevent caused by the buoyancy due to coating solution chip with
Not contacting between lower conductive part.
In an exemplary embodiment of the present invention embodiment, although not shown in accompanying drawing, but when chip 1 be loaded in substrate peace
When filling on platform 130, formed for conductive electrode pin in the upper and lower part for formed the edge electrodes of a part of chip 1
Electric contact.Contact and release for electrode pin with chip, can use the shaft-like gib block installed together with electrode pin.
Can be by making gib block rotation come while performing the contact and release of electrode pin and loaded chip.This single guiding
It is leaded molded that bar, the multiple electrodes pin on the gib block and its mechanical mechanism constitute single electrode.The present invention's
In embodiment, electrode pin module forms electric contact respectively in the upper and lower surface of chip.
Protection scope of the present invention is not limited to description and expression in specifically described embodiments above.In addition, this hair
Bright protection domain is also impossible to be restricted due to obvious change or replacing in technical field of the invention.
Claims (5)
1. a kind of plater for solar cell substrate, the plater is for as object to be coated and singly
The chip that individual surface is submerged is included using plating and photoinduction plating, the plater：
Substrate erecting bed, the substrate erecting bed is disposed in above plating groove, is supported along the upper end of the substrate erecting bed
The edge for the chip being flatly immersed in the plating groove, and the substrate erecting bed is used as being used for by the chip
The single surface submergence coating solution outlet；
First plating unit, first plating unit is by the positive electrode component in the bottom of the plating groove come to institute
State chip and perform plating；
Second plating unit, second plating unit is located at the plating groove between the positive electrode component and the chip
In, with while being sealed in the coating solution according to level matrix shape be arranged on second plating unit on
The direction chip transmit the multiple light sources of light, and perform photoinduction plating；And
Solution driver element, the solution driver element is used to stir the coating solution so that the solution is pacified by the substrate
The upper squit hole for filling platform overflows.
2. plater according to claim 1, wherein, the upper end of the substrate erecting bed is according to uneven
Shape is formed, and the chip is supported by peak dot, the coating solution of spilling is passed through between valley point and the peak dot
Gap again returns to the plating groove.
3. plater according to claim 1, the plater also includes Transparent shielding film, the Transparent shielding film water is put down
Ground is located between the light source of second plating unit and the substrate erecting bed, is arranged to be immersed in the plating molten
In liquid, and with being at regularly spaced the hole to be formed.
4. plater according to claim 1, the plater also includes electrode pin module, the electrode pin module
Conductive part is formed on the wafer, wherein, the electrode pin module is every in the upper and lower surface of the chip
Electric contact is formed on one.
5. plater according to claim 1, wherein,
The controller of the plater controls the plater in such a way：So that the second plating unit quilt
Operate first to form conductive seed on the surface of the chip, then the light source of second plating unit is turned off to
By first plating unit perform plating or second plating unit the light source be unlocked with photoinduction plating
Plating is performed together.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0080659 | 2014-06-30 | ||
| KR1020140080659A KR101567406B1 (en) | 2014-06-30 | 2014-06-30 | Plating equipment for solar cell wafer using electroplating and light-induced plating jointly |
| PCT/KR2015/006462 WO2016003111A1 (en) | 2014-06-30 | 2015-06-25 | Plating device for solar cell substrate, using both electroplating and light induced plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105940504A CN105940504A (en) | 2016-09-14 |
| CN105940504B true CN105940504B (en) | 2017-09-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580006055.6A Expired - Fee Related CN105940504B (en) | 2014-06-30 | 2015-06-25 | Use the plater for solar cell substrate of both plating and photoinduction plating |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101567406B1 (en) |
| CN (1) | CN105940504B (en) |
| WO (1) | WO2016003111A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155270B (en) * | 2017-12-13 | 2019-09-20 | 北京创昱科技有限公司 | A kind of separator and separation method of film and chip |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101760770A (en) * | 2009-12-30 | 2010-06-30 | 中国电子科技集团公司第二研究所 | Electroplating equipment for electrode of silicon solar cell slice |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008181924A (en) * | 2007-01-23 | 2008-08-07 | Ebara Corp | Apparatus and method for forming magnetic film |
| KR101449942B1 (en) * | 2012-01-17 | 2014-10-17 | 주식회사 호진플라텍 | Plating equipment for solar cell wafer using electroplating and light-induced plating jointly and method of the same |
-
2014
- 2014-06-30 KR KR1020140080659A patent/KR101567406B1/en active IP Right Grant
-
2015
- 2015-06-25 WO PCT/KR2015/006462 patent/WO2016003111A1/en active Application Filing
- 2015-06-25 CN CN201580006055.6A patent/CN105940504B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101760770A (en) * | 2009-12-30 | 2010-06-30 | 中国电子科技集团公司第二研究所 | Electroplating equipment for electrode of silicon solar cell slice |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101567406B1 (en) | 2015-11-10 |
| CN105940504A (en) | 2016-09-14 |
| WO2016003111A1 (en) | 2016-01-07 |
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