CN105938819A - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN105938819A
CN105938819A CN201610121591.7A CN201610121591A CN105938819A CN 105938819 A CN105938819 A CN 105938819A CN 201610121591 A CN201610121591 A CN 201610121591A CN 105938819 A CN105938819 A CN 105938819A
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semiconductor module
temperature sensor
semiconductor
transistor
cooler
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田口悦司
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Toyota Motor Corp
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Toyota Motor Corp
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    • B60VEHICLES IN GENERAL
    • B60LPROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
    • B60L3/00Electric devices on electrically-propelled vehicles for safety purposes; Monitoring operating variables, e.g. speed, deceleration or energy consumption
    • B60L3/0023Detecting, eliminating, remedying or compensating for drive train abnormalities, e.g. failures within the drive train
    • B60L3/003Detecting, eliminating, remedying or compensating for drive train abnormalities, e.g. failures within the drive train relating to inverters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60LPROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
    • B60L15/00Methods, circuits, or devices for controlling the traction-motor speed of electrically-propelled vehicles
    • B60L15/007Physical arrangements or structures of drive train converters specially adapted for the propulsion motors of electric vehicles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
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    • B60L50/00Electric propulsion with power supplied within the vehicle
    • B60L50/50Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells
    • B60L50/51Electric propulsion with power supplied within the vehicle using propulsion power supplied by batteries or fuel cells characterised by AC-motors
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7396Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927Liquid coolant without phase change
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    • B60VEHICLES IN GENERAL
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    • B60L2240/00Control parameters of input or output; Target parameters
    • B60L2240/40Drive Train control parameters
    • B60L2240/52Drive Train control parameters related to converters
    • B60L2240/525Temperature of converter or components thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
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    • B60L2240/00Control parameters of input or output; Target parameters
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
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    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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Abstract

本发明涉及半导体模块。一种半导体模块,其被安装在安装对象上并且通过被供给冷却介质的冷却器而被冷却,该半导体模块包括:封装体;多个半导体元件,其被设置在所述封装体内;以及温度传感器,其被设置在所述多个半导体元件的一部分中。具有所述温度传感器的所述半导体元件被配置为比其它半导体元件更邻近所述封装体的一个边缘部。具有所述温度传感器的所述半导体模块被安装在所述安装对象上,以使得具有所述温度传感器的所述半导体元件位于所述多个半导体元件中最上面的位置处。

Description

半导体模块
技术领域
本发明涉及半导体模块,其包括多个半导体元件,被安装在安装对象上,并且由被供给冷却介质的冷却器冷却。
背景技术
传统上,作为此类半导体模块,已知用于半桥电路的半导体模块,该模块包括构成上臂侧半导体芯片的晶体管芯片和二极管芯片以及构成下臂元件侧半导体芯片的晶体管芯片和二极管芯片(例如,公开号为2004-208411的日本专利申请(JP 2004-208411 A))。在该半导体模块中,两个晶体管芯片和两个二极管芯片在中间侧板的长边方向上排列成一列。构成上臂侧半导体芯片的晶体管芯片和二极管芯片沿中间侧板的长边方向彼此相邻,构成下臂元件侧半导体芯片的晶体管芯片和二极管芯片沿长边方向彼此相邻。
一般地,上述半导体模块通过将冷却介质供给到冷却器中而被冷却,该冷却器被设置为与模块接触。然而,在半导体模块中,当被供给到冷却器的冷却介质的量因某些原因而减少,冷却器内的液位下降时,半导体模块中所包括的所有半导体元件的温度因为冷却性能的劣化而升高。因此,即使在多个半导体元件的一部分中设置温度传感器,检测冷却器的冷却性能劣化的时间也会延迟,这可导致所述多个半导体元件过热。
发明内容
因此,本发明提供一种半导体模块,以使得即使当冷却半导体模块的冷却器的冷却性能劣化,也能够抑制该半导体模块中所包括的多个半导体元件的过热。
本发明的一方面涉及一种半导体模块。所述半导体模块被安装在安装对象上,并且通过被供给冷却介质的冷却器而被冷却。所述半导体模块包括:封装体;多个半导体元件,其被设置在所述封装体内;以及温度传感器,其被设置在所述多个半导体元件的一部分中。具有所述温度传感器的所述半导体元件被构造为比其它半导体元件更邻近所述封装体的一个边缘部,并且所述半导体模块被安装在所述安装对象上,以使得具有所述温度传感器的所述半导体元件位于所述多个半导体元件中最上面的位置处。
该半导体模块包括封装体和设置在封装体内的多个半导体元件,并且所述多个半导体元件中的一部分具有温度传感器。进一步地,具有温度传感器的半导体元件比其它半导体元件更邻近封装体的一个边缘部。此外,该半导体模块被安装在安装对象上,以使得具有温度传感器的半导体元件位于所述多个半导体元件中最上面的位置处,并且该半导体模块通过被供给冷却介质的冷却器而被冷却。因此,当被供给到冷却器的冷却介质的量减少,冷却器内的液位下降时,位于所述多个半导体元件中的最上面位置的半导体元件(即,具有温度传感器的半导体元件)的温度随着冷却器的冷却性能的劣化而最早升高。因此,通过监视被设置在位于最上面位置处的半导体元件中的温度传感器的检测值,可以立即检测到冷却器的冷却性能的劣化,并且可以立即执行用于保护所述多个半导体元件的处理。因此,即使冷却半导体模块的冷却器的冷却性能劣化,也可抑制半导体模块中包括的多个半导体元件的过热。
所述多个半导体元件可以包括具有所述温度传感器的绝缘栅双极型晶体管(IGBT)和不具有所述温度传感器的二极管。因此,即使冷却器的冷却性能劣化,也可通过在IGBT的温度传感器的检测值超过阈值时关断IGBT,有利地抑制IGBT和二极管两者的过热。
进一步地,所述半导体模块可以构造驱动电动机的逆变器,并且可以被安装在具有由所述逆变器驱动的所述电动机的车辆上。因此,通过构造上述驱动车辆的电动机的逆变器的半导体模块,可以抑制逆变器的过热,并且提高逆变器的耐久性。
另外,上述车辆可以具有:多个所述冷却器,这些冷却器被设置为与所述半导体模块的两面都接触;储液罐,其存储冷却介质;泵,其从所述储液罐吸入所述冷却介质,并且在压力下将所述冷却介质供给到所述冷却器;以及散热器,其冷却从所述冷却器返回到所述储液罐的所述冷却介质。
附图说明
下面将参考附图描述本发明的示例性实施例的特征、优点,以及技术和工业意义,在所述附图中,相同的参考标号表示相同的部件,其中:
图1是其上安装有包括根据本发明的半导体模块的电力控制单元的电动车辆的示意性配置;
图2是根据本发明的半导体模块的示意性配置;
图3是被安装在图1所示的电动车辆上的冷却系统的示意性配置;
图4是被安装在图1所示的电动车辆上的构成冷却系统的冷却器、以及半导体模块的示意性配置;
图5是被安装在图1所示的电动车辆上的构成冷却系统的冷却器、以及半导体模块的局部截面图。
具体实施方式
接下来参考附图解释用于实施本发明的模式。
图1是其上安装有包括根据本发明的半导体模块的电力控制单元的电动车辆1的示意性配置。图中所示的电动车辆1包括:电动机MG,其通过差动齿轮等与左右驱动轮DW相连;电池2;电力控制单元(下文称为“PCU”)4,其通过系统主继电器3与电池2相连,并且驱动电动机MG;以及电子控制单元(下文称为“ECU”),其控制整个电动车辆1。
电动机MG被配置为三相同步电动机,并且通过PCU 4与电池2交换电力。电动机MG通过来自电池2的电力而被驱动,并且向驱动轮DW输出行驶转矩。进一步地,电动机MG在电动车辆1制动时向驱动轮DW输出再生制动转矩。另外,在电动机MG中设置用于检测转子的旋转角θ(旋转位置)的旋转角传感器(解角器)6。电池2为锂离子二次电池或镍氢二次电池。如图所示,系统主继电器3具有与正电极侧的电力线PL相连的正电极侧继电器,以及与负电极侧的电力线NL相连的负电极侧继电器。
PCU 4包括逆变器40,其驱动电动机MG;升压转换器(电压转换单元)45,其升高来自电池2的电力的电压;以及平滑电容器46和47。逆变器40包括:六个晶体管(开关元件)Tr1、Tr2、Tr3、Tr4、Tr5和Tr6,其为例如绝缘栅双极型晶体管(IGBT);以及六个二极管D1、D2、D3、D4、D5和D6,其分别与晶体管Tr1到Tr6反并联连接。六个晶体管Tr1到Tr6形成对,以使得相对于正电极侧的电力线PL和负电极侧的电力线NL,每个对中的一个晶体管位于源侧,另一晶体管位于漏(sink)侧。进一步地,电动机MG的三相线圈的任一对应相(U相、V相和W相)与形成对的两个晶体管之间的连接点中的每一个电连接。
在该实施例中,如图2所示,与电动机MG的U相对应的晶体管Tr1、Tr2以及二极管D1和D2被设置(掩埋)在通过树脂成型制成的封装体P中,由此将单个半导体模块Mu与封装体P配置在一起。与电动机MG的V相对应的晶体管Tr3、Tr4和二极管D3、D4被设置(掩埋)在通过树脂成型制成的封装体P中,由此将单个半导体模块Mv与封装体P配置在一起。进一步地,与电动机MG的W相对应的晶体管Tr5、Tr6和二极管D5、D6被设置(掩埋)在通过树脂成型制成的封装体P中,从而将单个半导体模块Mw与封装体P配置在一起。在该实施例中,半导体模块Mu、Mv、Mw每一个的封装体P被形成为如图2所示的矩形板形状,并且在封装体壳的正面和背面(除窄边表面之外的两面)上设置热沉(未示出)。晶体管Tr1到Tr6被设置有温度传感器80,所述温度传感器80分别检测晶体管Tr1到Tr6的温度(在图1中,仅示出用于晶体管Tr5的温度传感器80)。
进一步地,逆变器40包括自保护电路44,其用于保护晶体管Tr1到Tr6和二极管D1到D6,并且晶体管Tr1到Tr6的温度传感器80与自保护电路44相连。自保护电路44将晶体管Tr1到Tr6的温度传感器80检测到的温度与预定的阈值温度进行比较,并且在被设置于晶体管Tr1到Tr6任一者内的温度传感器80的检测值超过阈值温度时,输出异常检测信号。在该实施例中,当电流传感器(未示出)检测到的在电动机MG的每个相中流动的电流(相电流)超过预定的阈值电流时,自保护电路44也输出异常检测信号。
升压转换器45包括:两个晶体管Tr7、Tr8,其为例如绝缘栅双极型晶体管(IGBT);两个二极管D7、D8,其分别与晶体管Tr7、Tr8反并联连接;以及电抗器L。电抗器L的一端通过系统主继电器3与电池2的正电极端子电连接,并且,其中一个晶体管Tr7(上臂)的发射极和另一晶体管Tr8(下臂)的集电极与电抗器L的另一端电连接。晶体管Tr7的集电极与正电极侧的电力线PL电连接,晶体管Tr8的发射极与负电极侧的电力线NL电连接。在该实施例中,升压转换器45的晶体管Tr7、Tr8和二极管D7、D8也被设置(掩埋)在通过树脂成型制成的封装体中,由此将单个半导体模块Mc与封装体配置在一起。
平滑电容器46被设置在系统主继电器3与升压转换器45之间,并且执行对升压转换器45的电池2侧的电压(即,升压前的电压VL)的平滑处理。进一步地,平滑电容器47被设置在升压转换器45与逆变器40之间,并且执行对升压之后的电压VH(被升压转换器45升压)的平滑处理。
ECU 10被配置为包括CPU(未示出)的微计算机,并且输入来自启动开关(点火开关)(未示出)的系统启动指令和系统停止指令、旋转角传感器6所检测到的电动机MG的旋转角θ、电压传感器(未示出)所检测到的升压前电压VL和升压后电压VH、来自电流传感器(未示出)的相位电流值、来自自保护电路44的异常检测信号等等。ECU 10基于这些输入信号产生逆变器40和升压转换器45的晶体管中每一个的开关控制信号,并且执行逆变器40和升压转换器45的开关控制。
进一步地,在接收到来自逆变器40的自保护电路44的异常检测信号时,ECU 10停止上述开关控制并且关断晶体管Tr1到Tr8,以关闭逆变器40和升压转换器45。因此,可以抑制晶体管Tr1到Tr8和二极管D1到D8的过热,并且抑制过量电流在晶体管Tr1到Tr8和二极管D1到D8中的流动。进一步地,ECU 10执行打开和闭合系统主继电器3的控制。ECU10的上述功能可以分布到多个电子控制单元中。
图3是用于冷却PCU 4(即,逆变器40、升压转换器45等等)的冷却系统5的示意性配置。如图所示,冷却系统5包括多个冷却器50、存储诸如LLC(长寿命冷却剂)的冷却介质(冷却液)的储液罐53、制冷泵55、以及散热器57。
如图3和图4所示,多个冷却器50被设置为交替地与配置逆变器40的多个半导体模块Mu、Mv、Mw,以及配置升压转换器45的半导体模块Mc对齐。换言之,为半导体模块中的一个设置两个冷却器50,以使冷却器50分别与该模块的正面和背面接触。进一步地,彼此相邻的冷却器50通过连通管51在内部彼此相通。制冷泵55从储液罐53中吸入冷却介质,并且在压力下将冷却介质供给到位于距离制冷泵55最近的一端侧的冷却器50。被供给到冷却器50的冷却介质连续地流入彼此相邻的冷却器50,在每个冷却器50内部流动的冷却介质从与冷却器50接触的半导体模块Mu等带走热量,由此冷却介质的温度升高。从每个冷却器50流出的冷却介质流入散热器57的热交换部,被散热器57冷却,然后返回到储液罐53。由此,每个冷却器50可以通过在多个冷却器50内部供给和循环冷却介质来冷却半导体模块Mu、Mv、Mw、Mc。
在此,当电动车辆1行驶时,由于例如飞溅的砾石等击中散热器57而可能发生冷却介质的泄漏。当发生此类冷却介质泄漏时,储液罐53的液位下降,由此导致制冷泵55吸入空气,或者使得制冷泵55无法在压力下供给冷却介质。进一步地,当从制冷泵55供给到每个冷却器50的冷却介质的量减少时,每个冷却器50内的液位下降,冷却性能劣化。由此,使配置逆变器40的半导体模块Mu、Mv、Mw的温度,以及配置升压转换器45的半导体模块Mc中所包括的晶体管Tr1到Tr8和二极管D1到D8的温度升高。
基于此,如图2和图5所示,逆变器40的半导体模块Mu被制造(配置)为使得:作为具有温度传感器80的半导体元件的晶体管Tr1和Tr2比没有温度传感器80的二极管D1和D2更邻近由树脂制成的封装体P的任一个边缘部Pe(一个边缘部)(参见图2和4,图中的上边缘部),并且沿着该边缘部Pe排列成一列。类似地,逆变器40的半导体模块Mv被制造(配置)为使得:具有温度传感器80的晶体管Tr3和Tr4比二极管D3和D4更邻近封装体P的任一个边缘部Pe,并且沿着该边缘部Pe排列成一列。逆变器40的半导体模块Mw被制造(配置)为使得:具有温度传感器80的晶体管Tr5和Tr6比二极管D5和D6更邻近封装体P的任一个边缘部Pe,并且沿着该边缘部Pe排列成一列。
进一步地,半导体模块Mu、Mv、Mw被设置在PCU4的壳400(参见图3)内,以使得:半导体模块Mu、Mv、Mw与冷却器50交替地排列,并且封装体P的边缘部Pe(即,晶体管Tr1到Tr6)位于壳400的顶板侧。然后,PCU 4被安装在电动车辆1上,以使得半导体模块Mu、Mv、Mw的封装体P的边缘部Pe(即,晶体管Tr1到Tr6)位于铅垂上侧。由此,当PCU 4安装在电动车辆1上时,具有温度传感器80的晶体管Tr1和Tr2位于半导体模块Mu中所有元件当中的最上面位置处,具有温度传感器80的晶体管Tr3和Tr4位于半导体模块Mv中所有元件当中的最上面位置处,并且具有温度传感器80的晶体管Tr5和Tr6位于半导体模块Mw中所有元件当中的最上面位置处。
因此,当在电动车辆1正在行驶等的同时,从制冷泵55供给到每个冷却器50的冷却介质的量减少并且至少任一个冷却器50(例如,离制冷泵55最远的冷却器50)内的液位(参见图5中交替的一长两短虚线)下降时,位于与冷却器50接触的半导体模块Mu、Mv、Mw的任一个中的最上面位置处的晶体管Tr1到Tr6中的至少任一个的温度随着冷却器50的冷却性能的劣化而最早升高。因此,通过监视设置在晶体管Tr1到Tr6中的温度传感器80的检测值,可以立即检测到冷却器50的冷却性能的劣化,并且可以立即执行用于保护半导体模块Mu、Mv、Mw(逆变器40)的晶体管Tr1到Tr6和二极管D1到D6、以及半导体模块Mc(升压转换器45)的晶体管Tr7、Tr8和二极管D7、D8的处理。
由此,在电动车辆1中,当来自设置在晶体管Tr1到Tr6任一者内的温度传感器80的检测值超过上述阈值温度时,逆变器40的自保护电路44输出异常检测信号,并且已经接收到该异常检测信号的ECU 10关断晶体管Tr1到Tr8,由此关闭逆变器40和升压转换器45。因此,即使冷却器50中任一个的冷却性能劣化,也可有利地抑制半导体模块Mu、Mv、Mw、Mc中所包括的晶体管Tr1到Tr8和二极管D1到D8的过热。因此,在电动车辆1中,逆变器40和升压转换器45的过热得到抑制,从而可以提高逆变器40和升压转换器45的耐久性。
如至此所解释的,配置PCU 4逆变器40的半导体模块Mu、Mv、Mw包括封装体P、以及分别被设置在封装体P内的晶体管Tr1、Tr2和二极管D1和D2、晶体管Tr3、Tr4和二极管D3、D4、晶体管Tr5、Tr6和二极管D5、D6。晶体管Tr1到Tr6分别具有温度传感器80。进一步地,晶体管Tr1、Tr2比二极管D1和D2更邻近封装体P的边缘部Pe,晶体管Tr3、Tr4比二极管D3、D4更邻近封装体P的边缘部Pe,并且晶体管Tr5、Tr6比二极管D5、D6更邻近封装体P的边缘部Pe。然后,半导体模块Mu、Mv和Mw被安装在电动车辆1上,以使得:晶体管Tr1和Tr2、晶体管Tr3和Tr4以及晶体管Tr5和Tr6位于被包括在半导体模块Mu、Mv和Mw每一者内的所有半导体元件当中的最上面位置处,并且通过被供给冷却介质的冷却器50而被冷却。由此,通过监视设置在晶体管Tr1到Tr6中的温度传感器80的检测值,可以立即检测到冷却器50的冷却性能的劣化,并且可以立即执行用于保护晶体管Tr1到Tr6和二极管D1到D6的处理。因此,即使冷却器50的冷却性能劣化,也可有利地抑制被包括在半导体模块Mu、Mv和Mw中的晶体管Tr1到Tr6和二极管D1到D6的过热。
并非总是需要在配置逆变器40的所有晶体管Tr1到Tr6中都设置温度传感器80。这意味着,考虑到PCU 4在电动车辆1上的安装状态(例如,PCU 4相对于车体稍微倾斜地安装)以及电动车辆1正在行驶(包括上坡和下坡行驶)时PCU 4的姿势,温度传感器80可以被设置于在所有元件当中可位于铅垂最上面位置处的至少一个晶体管中。进一步地,自保护电路可以内置于逆变器40的晶体管Tr1到Tr6的至少任一个中。进一步地,配置升压转换器45的半导体模块Mc可以配置为类似于逆变器40的半导体模块Mu、Mv和Mw,与上述自保护电路44类似的自保护电路可以被设置在升压转换器45或晶体管Tr7、Tr8中。另外,不用说,上述电动车辆1的结构可适用于包括两个或更多个电动机(逆变器)的混合动力车辆(可以包括,或者可以不包括用于电力分配的行星齿轮),以及所谓的单电动机型混合动力车辆、串联式混合动力车辆等等。
本发明不限于上述实施例,不用说,可以在本发明的宽度范围内做出多种更改。进一步地,用于实施上述发明的模式只是在“发明内容”中描述的发明的一个具体模式,并不限制在“发明内容”中描述的发明的要素。
本发明可用于制造包括半导体模块和配备有半导体模块的逆变器等的电力控制单元的领域。

Claims (4)

1.一种半导体模块,其被安装在安装对象上并且通过被供给冷却介质的冷却器而被冷却,所述半导体模块的特征在于包括:
封装体;
多个半导体元件,其被设置在所述封装体内;以及
温度传感器,其被设置在所述多个半导体元件的一部分中,其中
具有所述温度传感器的所述半导体元件被配置为比其它半导体元件更邻近所述封装体的一个边缘部,并且
具有所述温度传感器的所述半导体模块被安装在所述安装对象上,以使得具有所述温度传感器的所述半导体元件位于所述多个半导体元件中最上面的位置处。
2.根据权利要求1所述的半导体模块,其特征在于
所述多个半导体元件包括具有所述温度传感器的绝缘栅双极型晶体管和不具有所述温度传感器的二极管。
3.根据权利要求1或2所述的半导体模块,其特征在于
所述安装对象是车辆,所述车辆包括用于驱动电动机的逆变器并且具有由所述逆变器驱动的所述电动机。
4.根据权利要求3所述的半导体模块,其特征在于
所述车辆具有:多个所述冷却器,这些冷却器被设置为与所述半导体模块的两面都接触;储液罐,其存储冷却介质;泵,其从所述储液罐吸入所述冷却介质,并且在压力下将所述冷却介质供给到所述冷却器;以及散热器,其冷却从所述冷却器返回到所述储液罐的所述冷却介质。
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CN101388643A (zh) * 2007-09-12 2009-03-18 通用汽车环球科技运作公司 功率逆变器模块热管理
CN103219869A (zh) * 2012-01-20 2013-07-24 株式会社日立制作所 铁道车辆用电力转换装置的冷却器
JP2013247211A (ja) * 2012-05-25 2013-12-09 Mitsubishi Electric Corp 電力変換装置

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* Cited by examiner, † Cited by third party
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CN109660146A (zh) * 2017-10-10 2019-04-19 丰田自动车株式会社 电力变换装置
CN109660146B (zh) * 2017-10-10 2021-06-22 株式会社电装 电力变换装置

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