CN105871411B - RF chip, the RF circuit and an electronic device - Google Patents

RF chip, the RF circuit and an electronic device Download PDF

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CN105871411B
CN105871411B CN201610379176.1A CN201610379176A CN105871411B CN 105871411 B CN105871411 B CN 105871411B CN 201610379176 A CN201610379176 A CN 201610379176A CN 105871411 B CN105871411 B CN 105871411B
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pin
rf
capacitor
chip
radio frequency
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CN201610379176.1A
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CN105871411A (en
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单文英
张福良
宋琦
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联想(北京)有限公司
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Priority to CN201210530731.8A priority patent/CN103873102B/en
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Abstract

本申请公开了射频芯片、射频电路以及电子设备,其中,所述射频芯片包括:阻抗调整单元,所述阻抗调整单元用于调整所述射频芯片的输入阻抗和/或输出阻抗。 The present application discloses an RF chip, the RF circuit and an electronic apparatus, wherein the radio frequency chip comprising: an impedance adjusting unit, the impedance adjusting means for adjusting the input impedance of the RF chip and / or output impedance.

Description

射频芯片、射频电路以及电子设备 RF chip, the RF circuit and an electronic device

[0001] 本发明是申请号201210530731.8,申请日为2012年12月10日,发明名称为射频芯片、射频电路以及电子设备的分案申请。 [0001] The present invention has application No. 201210530731.8, filed December 10, 2012, entitled divisional RF chip, the RF circuit and an electronic device applications.

技术领域 FIELD

[0002] 本发明涉及电路板设计领域,特别涉及射频芯片、射频电路以及电子设备。 [0002] The present invention relates to a circuit board design, and more particularly relates to RF chip, the RF circuit and an electronic apparatus.

背景技术 Background technique

[0003]目前,随着电子技术的发展,电子设备也具有越来越多的功能,使得电子设备成为人们的生活或工作中不可或缺的一部分,比如手机,PAD,一体机,笔记本电脑等。 [0003] Now, with the development of electronic technology, electronic equipment also has a growing number of features that make living or working electronic devices become an integral part of people, such as mobile phones, PAD, one machine, notebook computers, .

[0004] 而在设计电子设备的过程中,会涉及到射频芯片,在射频芯片中,都是通过射频阻抗线进行各个器件之间的连接,在设计中,由于芯片输入输出阻抗固定,因此射频阻抗线具有一定的标准,比如50欧姆,而由于射频阻抗线的阻抗并不是都能够做到标准值,因此,业界规定偏差在一定范围之内属于业界规定的正常范围之内,满足基本要求。 [0004] In the process of designing electronic devices, it will involve the RF chip, the RF chip, is connected between respective devices via RF impedance line, in the design, since the chip input and output impedance fixed, RF impedance line having a certain standard, such as 50 ohms, since the impedance of the RF impedance line are not able to do the standard value, therefore, the industry belonging to a predetermined variation within the normal range in a predetermined industry within a certain range of, meet the basic requirements.

[0005] 而在实际情况中,所有的射频阻抗线都满足业界规定的正常范围要求,比如,射频阻抗线从45欧变为55欧,满足阻抗变化50± 10%的范围,但是由于射频芯片的容差性能不足,会出现射频性能下降的情况,导致射频指标无法满足要求。 [0005] In reality, the impedance of the RF lines are all meet the industry requirements of a predetermined normal range, for example, the European radio frequency impedance line 45 changes from 55 Euro, satisfies a range of 50 ± 10% of the impedance change, but since the RF chip the lack of tolerance performance, there will be cases RF performance degradation, leading RF specifications can not meet the requirements.

[0006] 因此,如何使得射频芯片满足射频阻抗线的偏差,还能保证良好的射频性能是电子设备的设计中需要解决的问题。 [0006] Therefore, how to meet such RF chip bias RF impedance line, but also to ensure good RF performance design of the electronic device need to be addressed.

[0007] 在现有技术中,为了解决这一问题,则是通过修改匹配电路的值进行调整,比如调整匹配电路的某一个器件的值,用其他的器件进行替换,使得射频芯片的性能满足要求。 [0007] In the prior art, in order to solve this problem is by modifying the value of the matching circuit adjustments, such as adjusting the value of a matching circuit of a device, be replaced with other devices, such that the RF chip performance meets Claim.

[0008] 而本申请人在实现本申请的过程中,发现在现有技术中,使用上述技术方案至少具有以下技术问题: [0008] During the implementation of the present applicant of the present application, it was found in the prior art, using the above technical solutions at least have the following technical problems:

[0009] 现有技术在调整射频阻抗线的阻抗时,需要用其他器件来替换匹配电路中的器件,导致产品可生产性有问题,每次生产前需要修改匹配电路,很难满足批量生产的要求。 [0009] In the prior art the adjustment of the impedance of the RF impedance of the line, it is necessary to replace the device with a matching circuit in other devices, resulting in product producibility problems, the matching circuit needs to be modified before each production and mass production is difficult to meet Claim. 而不修改又可能导致系统接受灵敏度低,或信号质量不满足要求。 Without modifying the system in turn may lead to accept a low sensitivity, or signal quality does not meet the requirements.

发明内容 SUMMARY

[001 0]本发明提供射频芯片、射频电路以及电子设备,用以解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题。 [0010] The present invention provides a radio frequency chip, RF circuit and an electronic device to solve the prior art problems impedance variation introduced art RF performance deterioration due to the impedance of the RF transmission line.

[0011] —方面,本发明通过本申请的一个实施例,提供如下技术方案: [0011] - aspect, the present invention is by one embodiment of the present application, there is provided the following technical solutions:

[0012] 一种射频芯片,所述射频芯片包括:阻抗调整单元,所述阻抗调整单元用于调整所述射频芯片的输入阻抗和/或输出阻抗。 [0012] A radio frequency chip, the RF chip comprising: an impedance adjusting unit, the impedance adjusting means for adjusting the input impedance of the RF chip and / or output impedance.

[0013] 优选的,所述射频芯片还包括:寄存器,所述寄存器用于接收一控制器的控制信号并进行存储,以使所述阻抗调整单元通过读取所述控制信号并基于所述控制信号调节所述输入阻抗和/或输出阻抗。 [0013] Preferably, the RF chip further comprises: a register for receiving a control signal of a controller and memory, so that the impedance adjusting means and the control signal based on the control by reading the input impedance of the signal conditioning and / or output impedance.

[00M]优选的,所述阻抗调整单元具体包括:第一电感,包括第一引脚和第二引脚,所述第一电感的第一引脚和所述射频芯片的第一芯片装置连接;第二电感,所述第二电感的第一引脚连接所述第一电感的第二引脚,所述第二电感的第二引脚和所述射频芯片的第二芯片装置连接;第一电容,所述第一电容的第一引脚连接在第一电感的第二引脚与所述第二电感的第一引脚之间,所述第一电容的第二引脚接地;第二电容,所述第二电容的第一引脚连接在所述第二电感与所述第二装置之间,所述第二电容的第二引脚接地。 [00M] Preferably, the impedance adjusting unit comprises: a first inductor, comprising a first pin and a second pin, means connecting the first pin and the first RF chip inductor of the first chip ; second inductor, a second inductor connected to the first pin of the second pin of the first inductor, the second inductor chip device connected to the second pin and the second RF chip; first between the second pin and the first pin a second inductor capacitor, a first capacitor connected to the first pin in the first inductor, a first capacitor and the second pin grounded; a first two capacitors, the first pin connected to the second capacitor between the second inductor and the second device, the second pin is grounded second capacitor.

[0015] 优选的,所述第一电容具体由M个第一子电容以及对应的M个第一开关构成,在所述M个第一子电容中,每一个第一子电容的第二引脚接地,每一个第一子电容的第一引脚和对应的第一开关的第一端串联,所述对应的第一开关的第二端连接在第一电感的第二引脚与所述第二电感的第一引脚之间,所述1。 [0015] Preferably, the first specific capacitance composed of M sub-M first capacitor and a first switch corresponding to the M first sub-capacitor, each of the second lead of the first capacitor sub a ground pin, each of the first sub-capacitor of the first switch and a first end of the series corresponding to a first pin, a second terminal of said corresponding first switch is connected to the first inductor and the second pin between the first pin of the second inductor, the 1.

[0016] 优选的,所述第二电容具体由N个第二子电容以及N个第二开关构成,在所述N个第二子电容中,每一个第二子电容的第一引脚接地,每一个第二子电容的第二引脚和对应的第二开关的第一端串联,所述对应的第二开关的第二端连接在第二电感的第二引脚与所述第二芯片装置之间,所述1。 [0016] Preferably, the second capacitor by a specific sub-capacitor and a second N N second switching configuration, the N sub-second capacitor, a first ground pin of each of the second sub-capacitor , each of the second sub-capacitor of the first end of the series and a second switch corresponding to the second pin, a second end connected to a second switch corresponding to the second pin in the second inductor and the second between a chip device, the 1.

[0017] 另一方面,本申请通过本申请另一个实施例提供: [0017] On the other hand, the present embodiment provides a further application by the present application:

[0018] —种射频电路,所述射频电路包括如上述实施例所述的射频芯片;所述射频电路还包括:配置总线,所述配置总线连接在控制器与寄存器之间,用于传送所述控制器控制信号给所述寄存器。 [0018] - species RF circuit, the radio frequency circuit comprises a radio frequency chip as described in the above embodiment; the radio frequency circuit further comprising: a configuration bus, said configuration bus connection between the controller and register for transferring the said control signal to said control register.

[0019] 优选的,所述射频电路还包括:射频前端,和所述射频芯片连接。 [0019] Preferably, the radio frequency circuit further comprising: a radio frequency front end, and connected to the RF chip.

[0020] 优选的,所述射频电路还包括:天线,和所述射频前端连接。 [0020] Preferably, the radio frequency circuit further comprising: an antenna, and the RF front-end connection.

[0021] 另一方面,本申请通过本申请另一个实施例提供: [0021] In another aspect, the present application provides a further embodiment the present application:

[0022] 一种电子设备,所述电子设备包括如上述实施例中所述的射频电路;所述电子设备还包括控制器,所述控制器通过配置总线和所述射频芯片连接,用于发送控制信号控制寄存器。 [0022] An electronic device, said electronic device comprises a radio frequency circuit as described in the above embodiment; the electronic device further comprises a controller, the configuration bus controller and the RF chip is connected, for transmitting register control signal.

[0023]上述技术方案中的一个或多个技术方案,具有如下技术效果或优点: [0023] An aspect of the above aspect or more, has the following technical effects or advantages:

[0024] 本申请中的射频芯片,通过在射频芯片中使用阻抗调整单元代替匹配电路,调整所述射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题。 [0024] RF chip in the present application, by using the impedance adjusting unit instead of the matching circuit in the RF chip, the RF chip to adjust the input impedance and / or output impedance, and further capable of solving the prior art due to the presence of radio frequency impedance transmission line impedance deviation the introduction of RF performance deterioration of technical problems.

[0025] 进一步的,本申请中的射频电路,通过使用配置总线连接控制器和射频芯片中的寄存器,能够传送控制器的控制信号给寄存器,用以调整射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题。 [0025] Further, the radio frequency circuit of the present application, by using the configuration bus controller connected to the RF chip and a register, the controller can transmit a control signal to the register, for adjusting the input impedance of the RF chip and / or output impedance , and thus can solve the prior art technical problem RF performance degradation due to the introduction of the RF impedance variations of the transmission line impedance.

[0026] 进一步的,在本申请中的电子设备,具有控制器,通过配置总线和射频芯片连接, 用于发送控制信号控制寄存器,用以调整射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化,以及重新需要调整匹配电路,整加调试工作量,影响产品的可量产性的技术问题。 [0026] Further, in the electronic apparatus of the present application, having a controller, and by configuring bus connected to the RF chip, for transmitting a control signal to the control register, to adjust the input impedance of the RF chip and / or the output impedance can be further Since the prior art to solve the impedance of the RF transmission line impedance bias RF performance degradation introduced, and a mass production of technical problems need to re-adjust the matching circuit, the whole add debugging work, the affected product.

附图说明 BRIEF DESCRIPTION

[0027] 图1为本申请实施例中射频芯片的示意图; [0027] Figure 1 is a schematic diagram of the application embodiment RF chip;

[0028] 图2为本申请实施例中阻抗调整单元的内部结构图; L〇〇29」图3为本申请实施例中第一电容的内部结构图; [0028] FIG 2 an internal configuration diagram of the impedance adjusting unit embodiment of the present application; L〇〇29 "FIG. 3 embodiment of the present application internal structure of the first embodiment of the capacitor;

[0030]图4为本申请实施例中射频电路的内部结构图; [0030] FIG 4 an internal configuration diagram of the radio frequency circuit of the embodiment of the present application;

[0031 ]图5为本申请实施例中电子设备的内部结构图; [0031] FIG 5 an internal configuration diagram of the electronic device according to the present application;

[0032]图6为本申请实施例中调整寄存器11〇2需要使用的一系列器件组成的整体结构图。 [0032] FIG. 6 embodiment 11〇2 register adjustment device requires a series consisting of an overall configuration view of an embodiment of the present application.

具体实施方式 Detailed ways

[0033]为了解决现有技术中存在的由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题,本发明提供射频芯片、射频电路以及电子设备,下面,介绍本申请的总体思路: [0034]在本申请中,提出了射频芯片、射频电路以及电子设备,射频芯片包括:阻抗调整单元,阻抗调整单元用于调整射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题。 [0033] In order to solve the prior art technical problems impedance variation introduced RF performance degradation due to the radio frequency impedance of the transmission line, the invention provides the present RF chip, the RF circuit and an electronic device, the following describes the present application, the general idea: [0034] in the present application, proposes the RF chip, the RF circuit and an electronic device, the RF chip comprising: an impedance adjusting unit, the impedance adjusting unit for adjusting the input impedance of the RF chip and / or the output impedance, and further capable of solving the prior art due to the presence of RF impedance of the transmission line impedance bias RF performance degradation introduced technical problems.

[0035]下面结合说明书附图对本发明实施例的主要实现原理、具体实施过程及其对应能够达到的有益效果进行详细的阐述。 [0035] The following description in conjunction with the accompanying drawings implementation principle of the embodiments of the present invention, the specific implementation and the corresponding beneficial effects can be achieved in detail.

[0036] 实施例一: [0036] Example a:

[0037] 在本申请实施例中,公开了一种射频芯片11。 [0037] In the embodiment of the present application, discloses a radio frequency chip 11.

[0038] 如图1所示,射频芯片11包括:阻抗调整单元1101。 [0038] As shown, the RF chip 111 comprises: an impedance adjusting unit 1101.

[0039]更为具体的,阻抗调整单元1101用于调整射频芯片11的输入阻抗和/或输出阻抗。 [0039] More specifically, the impedance adjusting unit 1101 for adjusting the input impedance of the RF chip 11 and / or output impedance.

[0040] 进一步的,射频芯片11还包括:寄存器1102。 [0040] Further, the RF chip 11 further comprising: a register 1102.

[0041] 下面具体介绍寄存器1102的功能。 [0041] The following detailed description of the function register 1102.

[0042] 寄存器1102主要用于接收一控制器I2的控制信号并进行存储,以使阻抗调整单元1101通过读取控制信号并基于控制信号调节输入阻抗和/或输出阻抗。 [0042] The register controller 1102 is mainly used for receiving a control signal I2 and storage, so that the impedance adjusting unit 1101 and the read control signal by adjusting the input impedance and / or output impedance based on the control signal.

[0043] 进一步的,寄存器1102和阻抗调整单元1101具有连接关系,进一步的,寄存器11〇2 还和控制器12具有连接关系。 [0043] Further, the register 1102 and an impedance adjusting unit 1101 has a connection relation, further, a controller 12 and a register 11〇2 also has a connection relation.

[0044] 即:寄存器1102连接在控制器12以及阻抗调整单元1101之间。 [0044] That is: the register 1102 is connected between the controller 12 and an impedance adjusting unit 1101.

[0045] 进一步的,在实际应用中,控制器12可以为基带控制器,还可以为具有可编程能力的单片机,当然,控制器12的具体种类本申请实施例不做限制。 [0045] Further, in practical applications, the controller 12 may be a baseband controller, microcontroller programmability can also, of course, specific kinds of the controller 12 of the present embodiment is not limited in application Example.

[0046] 请参看图2,下面具体介绍阻抗调整单元11〇1的内部结构。 [0046] Referring to Figure 2, the following describes the specific internal configuration of the impedance adjusting unit 11〇1.

[0047] 在图2中,阻抗调整单元1101具体包括:第一电感L1,第二电感L2,第一电容C1,第~电容C2。 [0047] In FIG. 2, the impedance adjusting unit 1101 comprises: a first inductor L1, the second inductor L2, a first capacitor C1, the capacitor - C2.

[0048] 其中,各个器件之间的连接关系具体如下: [0048] wherein connections between the individual components as follows:

[0049] 第一电感L1,包括第一引脚和第二引脚,第一电感L1的第一引脚和射频芯片11的第一芯片装置001连接。 [0049] The first inductor L1, comprising a first pin and a second pin, the first pin and the first inductor L1 is a first chip device 001 is connected to the RF chip 11.

[0050] 第二电感L2,第二电感L2的第一引脚连接第一电感L1的第二引脚,第二电感L2的第二引脚和射频芯片11的第二芯片装置002连接。 [0050] The second inductor L2, the second inductor L2 is connected to a first pin of the second pin of the first inductor L1, the second inductor L2, the second RF chip and the second chip pin means connected to 00,211.

[0051] 第一电容C1,第一电容C1的第一引脚连接在第一电感L1的第二引脚与第二电感L2 的第一引脚之间,第一电容C1的第二引脚接地。 [0051] The first capacitor C1, a first inductor connected between the first pin a second pin of the first pin and the second inductor L2 L1 of the first capacitor C1, a second pin of the first capacitor C1 ground.

[0052] 第一电容C2,第一电容C2的第一引脚连接在第二电感L2与第二装置之间,第一电容C2的第二引脚接地。 [0052] The first capacitor C2, a first pin of the first capacitor C2 is connected between the second inductor L2 and a second device, a second capacitor C2, a first pin is grounded.

[0053] 进一步的,第一电容Cl的具体结构请参看图3。 [0053] Further, the specific structure of the first capacitor Cl, see Figure 3.

[0054] 在图3中,第一电容C1具体由M个第一子电容C11以及对应的M个第一开关K1构成, 在M个第一子电容C11中,每一个第一子电容C11的第二引脚接地,每一个第一子电容cil的第一引脚和对应的第一开关K1的第一端串联。 [0054] In FIG. 3, a first capacitor C1 is constituted by M first specific sub-capacitor C11 and the corresponding M first switch K1, the M first sub-capacitor C11 in each of the first sub-capacitor C11 is a second ground pin, each of the first sub-capacitor cil first pin and the first end of the first series corresponding to the switch K1.

[0055]更为具体的,对应的第一开关K1的第二端连接在第一电感L1的第二引脚与第二电感L2的第一引脚之间,M彡1。 [0055] More specifically, the second end of the corresponding first switch K1 is connected between the first inductor L2 of the second pin and the second pin of the first inductor L1, and 1 M San.

[0056] 进一步的,第一电容C2具体由N个第二子电容以及N个第二开关构成,在N个第二子电容中,每一个第二子电容的第一引脚接地,每一个第二子电容的第二引脚和对应的第二开关的第一端串联,对应的第二开关的第二端连接在第二电感L2的第二引脚与第二芯片装置002之间,N彡1。 [0056] Further, the first capacitor C2 from the N second specific capacitance and N second sub-switch configuration, the N second sub-capacitor, each of the second sub-capacitor of a first ground pin, each a first pin and a second end of the series a second switch corresponding to a second sub-capacitor, a second terminal connected to a second switch corresponding to the second inductor L2 between the second pin and the second chip device 002, N San 1.

[0057]当然,在实际情况中,不仅只有第一电容C1和第一电容C2由多个电容组成,第一电感L1和第二电感L2也可以由多个电感组成。 [0057] Of course, in reality, not only the first capacitor C1 and the capacitor C2 of the first plurality of capacitors, a first inductor L1 and the second inductor L2 may be formed of a plurality of inductors.

[0058] 进一步的,第一电容C2的内部结构和第一电容C1的内部结构相类似,在此本申请不再赘述。 [0058] Further, the first capacitor and the internal configuration of the internal structure of the first capacitor C1 C2 are similar, the present application will not be repeated here.

[0059]在上述实施例中,介绍了一种射频芯片11以及射频芯片11中的内部结构,更为具体的,该射频芯片11能够应用于电子设备的设计中,比如手机的设计或者基站的应用,都能够使用该射频芯片11。 [0059] In the above embodiment, there is described the internal structure 11 and the RF chip 11, a radio frequency chip, more specifically, the RF chip 11 can be applied to the design of electronic devices, such as mobile phones or base stations designed applications are able to use the RF chip 11.

[0060] 在下面的实施例中,则会具体介绍一种射频电路40。 [0060] In the following embodiments, it will introduce a specific radio frequency circuit 40.

[0061] 实施例二: [0061] Example II:

[0062] 在本申请实施例中,请参看图4,提供了一种射频电路40。 [0062] In the present application embodiment, see Figure 4, there is provided a radio frequency circuit 40.

[0063] 进一步的,射频电路40包括实施例一中描述的射频芯片11,而射频芯片11的具体结构在实施例一中已经有详尽的描述,在此,本申请实施例不再赘述。 [0063] Further, the RF circuit 40 includes a radio frequency chip embodiment described in Example 11 a, and the specific configuration of the RF chip 11 in the embodiment example 1 has been described in detail, in this embodiment application of the present embodiment will not be repeated.

[0064] 另外,射频电路40除了包含上述实施例中描述的射频芯片11之外,射频电路40还包括:配置总线401,配置总线401连接在控制器12与寄存器1102之间,用于传送控制器12控制信号给寄存器1102。 [0064] Further, the RF circuit 40 includes a radio frequency chip in addition to the above described embodiments other than 11, RF circuitry 40 further comprising: a configuration bus 401, bus 401 configured connection between the controller 12 and the register 1102, for transfer control 12 is a control signal to the register 1102.

[0065] 在实际应用中,配置总线401可以是在电子设备中新增的总线,也可以使用芯片中现有的连接线作为配置总线4〇1,而在本申请实施例中,则以新增的总线作为配置总线4〇1 进行举例。 [0065] In practice, the configuration bus 401 may be added to the bus in an electronic device, the chip may be used as a conventional configuration bus 4〇1 connecting line, whereas in the present application embodiment, new places exemplified as the bus by bus 4〇1 configuration.

[0066] 除此之外,射频电路40具体还包括了射频前端402以及天线403。 [0066] In addition, the RF circuit 40 further includes a specific RF front-end 402 and an antenna 403.

[0067] 更为具体的,射频前端402,和射频芯片11连接。 [0067] More specifically, the RF front-end 402, and the RF chip 11 is connected.

[0068] 天线403,和射频前端402连接。 [0068] antenna 403, and RF front-end 402 is connected.

[0069] 下面具体介绍以下射频前端402和天线403的具体作用。 [0069] The following specifically describes the specific role of the RF front end 402 and antenna 403.

[0070] 射频前端402,包括接收通路和发射通路。 [0070] RF front-end 402, comprising a receive path and a transmit path.

[0071] 进一步的,接收通路包括低噪声放大器(LNA)、滤波器等器件,包括增益、灵敏度、 射频接收带宽等指标,要根据产品特点进行设计,目的是保证有用的射频信号能够完整、不失真地从空间拾取出来并输送给后级的变频、中频放大等电路进行处理。 [0071] Further, the receive path includes a low noise amplifier (the LNA), a filter and other devices, including gain, sensitivity, a radio frequency receiver bandwidth index, designed according to the characteristics of the product, designed to ensure the RF signal can be useful incomplete, picked up from the spatial distortion out and fed to a subsequent stage for processing the frequency, an intermediate frequency amplification circuit.

[0072] 发射通路具体用于功率放大、滤波等工作,将传送过来的信号进行调制、数模转换、功率放大等等一系列工作之后,传送给天线403进行发送。 After the signal [0072] DETAILED transmission path for power amplification, filtering, etc., transmitted from the modulated, digital to analog conversion, power amplification and so a series of work transmitted to the antenna 403 for transmission.

[0073] 更为具体的,图4中介绍了射频电路40的内部结构图。 [0073] More specifically, in FIG. 4 describes the internal configuration of the RF circuit 40 of FIG.

[0074] 其中,在图4中,射频芯片11和射频前端402连接,射频前端402和天线4〇3连接,另夕卜,配置总线401连接在控制器12和射频芯片11中的寄存器1102之间。 [0074] where, in FIG. 4, the RF chip 11 and the RF front-end 402 is connected to the antenna and RF front end 402 is connected 4〇3 other Bu Xi, configuration register 401 is connected to the bus controller 12 and the RF chip 11 of 1102 between.

[0075] 而图4中的各个器件的具体的功能在上面己经进行了介绍,因此,本申请实施例不再赘述。 [0075] and the specific functions of each device in FIG. 4 were already described above, therefore, not repeated embodiment embodiment of the present application.

[0076] 上面的实施例具体描述了一种射频电路40,下面,将以具体的实施例对包含了该射频电路40的电子设备进行介绍。 [0076] The above embodiments specifically describes a radio frequency circuit 40, below, will the RF circuit containing the electronic device 40 will be described specific embodiments.

[0077] 实施例三: [0077] Example III:

[0078] 在本申请实施例中,提供了一种电子设备。 [0078] In the embodiment of the present application, there is provided an electronic device.

[0079] 进一步的,该电子设备包括上述实施例二中介绍的射频电路40,而更为具体的,该射频电路40还包括了上述实施例一中描述的射频芯片11。 [0079] Further, the electronic apparatus includes the above second embodiment describes the RF circuit 40 and, more particularly, the RF circuitry 40 further includes a radio chip in the first embodiment above described 11.

[0080] 进一步的,电子设备还包括控制器12,控制器12通过配置总线401和射频芯片11连接,用于发送控制信号控制寄存器11〇2。 [0080] Further, the electronic device further includes a controller 12, the controller 12 is connected via a bus 401 and RF chip configuration 11, for transmitting a control signal register 11〇2.

[0081] 下面请参看图5,对电子设备的内部结构进行详细的描述。 [0081] Referring next to Figure 5, the internal structure of the electronic device will be described in detail.

[0082] 在图5中,电子设备包括了控制器12,射频芯片11,阻抗调整单元1101,寄存器1102,射频前端402,天线403。 [0082] In FIG. 5, the electronic device comprises a controller 12, the RF chip 11, the impedance adjusting unit 1101, a register 1102, the RF front end 402, an antenna 403.

[0083] 进一步的,控制器12通过配置总线401和射频芯片11连接,更为具体的,控制器12 通过配置总线401和射频芯片11中的寄存器1102连接。 [0083] Further, the controller 12 is connected via a bus 401 and RF chip configuration 11, more specifically, the controller 12 is connected via a bus 401 arranged in the RF chip 11 and the register 1102. 进一步的,射频芯片11通过射频阻抗传输线和射频前端402进行连接,并且,射频前端402和天线403进行连接。 Further, the RF chip 11 is connected through RF impedance of the transmission line and the RF front end 402, and RF front-end 402 and the antenna 403 are connected.

[0084] 另外,在射频芯片11中具有阻抗调整单元1101,则阻抗调整单元1101和寄存器1102连接,以使所述阻抗调整单元1101通过读取所述控制信号并基于所述控制信号调节所述输入阻抗和/或输出阻抗。 [0084] In addition, an impedance adjusting unit 1101 in the RF chip 11, the impedance adjusting unit 1101 and the register 1102 is connected to the impedance adjusting unit 1101 and the read control signal based on the control signal conditioning the input impedance and / or output impedance.

[0085] 而进一步的,阻抗调整单元1101中的内部结构则如图2所示,再次本申请不做赘述。 [0085] and further, the internal structure of the impedance adjusting unit 1101 is shown in Figure 2, the present application is not repeated again.

[0086] 在图5中,描述了本申请实施例的电子设备的具体结构图,下面使用具体的示例对电子设备中,射频芯片丨i中的阻抗调整单元1101调整所述射频芯片11的输入阻抗和/或输出阻抗进行说明。 [0086] In FIG. 5, described in the present application a specific configuration diagram of an electronic apparatus according to the embodiment, the following specific examples using the electronic device, the RF chip Shu i impedance adjusting the adjustment input unit 1101 of the RF chip 11 impedance and / or output impedance will be described.

[0087] 进一步的,上述电子设备是可以用到射频电路的所有设备,如手机、PDA、笔记本电脑、平板电脑、一体机电脑、台式电脑等等。 [0087] Further, all the devices used in the electronic device is a radio frequency circuit, such as a phone, PDA, laptop computers, tablet computers, one computer, desktop computers and the like.

[0088] 以第一电容C1接受寄存器1102的控制进行举例。 [0088] In a first capacitor C1 receives a control register 1102 are exemplified.

[0089] 在射频阻抗传输线发生变化时,控制器12首先会通过配置总线401修改寄存器1102〇 [0089] When the change in the RF impedance of the transmission line, the controller 12 will first bus 401 by modifying the configuration register 1102〇

[0090] 此时,寄存器1102每一位都控制与每一个第一子电容C11连接的第一开关K1,通过调整第一开关K1的开关或者闭合,来获得需要的电容值。 [0090] In this case, each bit register 1102 controls the first switch K1 is connected to each of a first sub-capacitor C11 is, by adjusting a first switch or switch K1 is closed, to obtain the desired capacitance value.

[0091] 比如,控制器12需要调整l.6pF的电容与射频阻抗传输线进行匹配,而每一个第一子电容C11的Cp = 0.2pF,因此,控制器12通过配置总线401控制寄存器1102,将连接第一开关K1的每一个接口设置为11111111,控制8个第一开关K1闭合,则会获得1 • 6pF的电容,进而能够与射频阻抗传输线进行匹配,因此,则避免了射频传输线阻抗偏差带来的系统射频性能恶化的技术问题。 [0091] For example, the controller 12 to adjust the capacitance of l.6pF RF impedance matching transmission line, and each of the first sub-capacitor C11 is Cp = 0.2pF, therefore, the controller 12 controls the bus configuration registers 401 through 1102, the K1 is a first switch connected to each interface is set to 11111111, eight first control switch K1 is closed, the capacitor 1 • 6pF will be obtained, and further can be matched to the impedance of the RF transmission line, therefore, is avoided with the RF transmission line impedance deviation RF performance of the system to deteriorate technical problems.

[0092] 进一步的,在实际应用中,请参看图6,为调整寄存器11〇2的具体过程: [0092] Further, in practical applications, see Figure 6, for the adjustment register 11〇2 specific process:

[0093] 在图6中,首先描述调整寄存器1102需要使用的一系列器件组成的整体结构。 [0093] In FIG. 6, described first register adjustment device 1102 requires a series of overall configuration thereof.

[0094] 首先,具有待测件601,该待测件601则为可以用到射频电路的设备。 [0094] First, test pieces having 601, 601 compared with the test device can be used in the RF circuit.

[0095] 其次,还具有和待测件601连接的控制器,如测试计算机6〇2,更为具体的,测试计算机602可以通过USB连接线和待测件6〇1进行连接。 [0095] Next, and also has a controller 601 connected to the test specimen, such as a test computer 6〇2, more specifically, the test computer 602 may be connected by a USB cable, and the test specimen 6〇1.

[0096] 进一步的,测试计算机6〇2和射频测试仪器连接,更为具体的,测试计算机6〇2通过GBIP仪器控制线和射频测试仪器6〇3连接。 [0096] Further, the test computer is connected 6〇2 and RF test instruments, and more specifically, the test computer via GBIP 6〇2 instrument and control line 6〇3 RF test instruments.

[0097] 进一步的,射频测试仪器603和待测件6〇1连接,更为具体的,射频测试仪器6〇3通过射频连接线和待测件6〇1连接。 [0097] Further, the RF test equipment and test specimen 6〇1 connector 603, more specifically, the RF test instruments 6〇3 connected by cable and the RF test specimen 6〇1.

[0098] 下面对图6中的调节结构进行具体的描述。 [0098] Next, the adjustment mechanism in FIG. 6 will be specifically described.

[0099] 首先,测试计算机602通过GBIP仪器控制线读取射频测试仪器603显示的测量值。 [0099] First, the test computer 602 reads the measurement value 603 displays RF test instruments by the instrument GBIP control line. [0100] 该测量值具有两种情况。 [0100] This measurement has two cases.

[0101] 第一种情况:显示的测量值表示待测件601的射频指标合格。 [0101] The first case: the measured value display indicates the test piece 601 passing radio frequency index.

[0102] 若合格,则进一步表明了上述实施例中的射频电路40满足要求,因此保留寄存器现有的值,不对其进行调整。 [0102] When passing, it is further indicated that the above-described embodiments satisfy the requirements of the RF circuit 40, thereby retaining the existing value of the register, not be adjusted. _ _

[0103] 第二种情况:显示的测量值表示待测件601的射频指标不合格。 [0103] The second situation: the measured value displayed represents the radio frequency index 601 test specimen failed.

[0104] 如果射频指标不合格,则测试计算机602通过USB连接线控制待测件601调整寄存器1102的值,修改射频芯片11内部的阻抗调整单元11〇1。 [0104] If the RF indicators of failure, the test specimen, the test computer 602 to adjust the value of the register 601 is 1102, modified to adjust the internal impedance of the RF chip 11 via the USB cable unit 11〇1 control.

[0105] 修改之后,测试计算机602通过GBIP仪器控制线再一次读取射频测试仪器6〇3显示的测量值。 After the [0105] modified, the test computer 602 reads the measurement value displayed 6〇3 RF test instruments by the instrument control line GBIP again.

[0106] 并根据这一次测量出的测量值判断待测件601的射频指标是否合格。 [0106] According to this measurement and the measurement value is determined frequency performance test specimen 601 is qualified.

[0107] 若合格,保留当前寄存器的值。 [0107] When qualified, to retain the current value of the register.

[0108] 若不合格,则测试计算机602继续按照前面的方法调整寄存器,直到测量出射频指标合格为止。 [0108] If failed, the test computer 602 continues to adjust register according to the previous method, until the measured RF specifications pass up.

[0109] 通过本发明的一个或多个实施例,可以实现如下技术效果: [0109] Example embodiments of the present invention or by a plurality, technical effects may be achieved as follows:

[0110] 在本申请的一个或者多个实施例中,提供了射频芯片,通过在射频芯片中使用阻抗调整单元代替匹配电路,调整所述射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题。 [0110] In one or more embodiments of the present application, there is provided a radio frequency chip, by using the impedance adjusting unit instead of the matching circuit in the RF chip, the RF chip to adjust the input impedance and / or output impedance, and further can be solved introducing technical problem RF performance variations due to the deterioration of the RF impedance of the transmission line impedance of the prior art.

[0111] 在本申请的一个或者多个实施例中,提供了射频电路,通过使用配置总线连接控制器和射频芯片中的寄存器,能够传送控制器的控制信号给寄存器,用以调整射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化的技术问题。 [0111] In one or more embodiments of the present application, there is provided a radio frequency circuit, by using a configuration bus connected to the controller and the RF chip registers, the controller can transmit a control signal to the register for adjusting the RF chip input impedance and / or output impedance, and further capable of solving problems due to the presence of the prior art RF impedance art transmission line impedance variation introduced RF performance degradation.

[0112] 在本申请的一个或者多个实施例中,提供了电子设备,具有控制器,通过配置总线和射频芯片连接,用于发送控制信号控制寄存器,用以调整射频芯片的输入阻抗和/或输出阻抗,进而能够解决现有技术存在由于射频阻抗传输线阻抗偏差引进的射频性能恶化,以及重新需要调整匹配电路,整加调试工作量,影响产品的可量产性的技术问题。 [0112] In one or more embodiments of the present application, there is provided an electronic device, having a controller, and by configuring bus connected to the RF chip, for transmitting a control signal to the control register, to adjust the input impedance of the RF chip and / or the output impedance, and thus can solve the prior art due to the presence of radio frequency impedance transmission line impedance variation introduced deterioration of RF performance, and the need to re-adjust the matching circuit, the whole add debugging work, the product may influence production of technical problems.

[0113] 显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。 [0113] Obviously, those skilled in the art can make various modifications and variations to the invention without departing from the spirit and scope of the invention. 这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。 Thus, if these modifications and variations of the present invention fall within the claims of the invention and the scope of equivalents thereof, the present invention intends to include these modifications and variations.

Claims (7)

1. 一种射频芯片,其特征在于,所述射频芯片包括: 阻抗调整单元,所述阻抗调整单元用于调整所述射频芯片的输入阻抗和/或输出阻抗; 其中,所述阻抗调整单元具体包括: 第一电感,包括第一引脚和第二引脚,所述第一电感的第一引脚和所述射频芯片的第一芯片装置连接; 第二电感,所述第二电感的第一引脚连接所述第一电感的第二引脚,所述第二电感的第二引脚和所述射频芯片的第二芯片装置连接; 第一电容,所述第一电容的第一引脚连接在第一电感的第二引脚与所述第二电感的第一引脚之间,所述第一电容的第二引脚接地; 第二电容,所述第二电容的第一引脚连接在所述第二电感与所述第二芯片装置之间, 所述第二电容的第二引脚接地。 1. A radio frequency chip, wherein the RF chip comprises: an impedance adjusting unit, the impedance adjusting means for adjusting the input impedance of the RF chip and / or output impedance; wherein the impedance adjusting unit particularly comprising: a first inductor, comprising a first pin and a second pin, the first pin of the first inductor and a first RF chip of said chip means; a second inductor, the second inductor of a second lead pin is connected to the first inductor, the second inductor and the second RF chip pin second chip device is connected; a first capacitor, said first capacitor first lead between the second pin and the first pin of the second inductor is connected in a first leg inductor, the second capacitor a first pin is grounded; a second capacitor, said second capacitor first lead pin connected between the second inductor and the second chip device, the second pin is grounded second capacitor.
2. 如权利要求1所述的射频芯片,其特征在于,所述第一电容具体由M个第一子电容以及对应的M个第一开关构成,在所述M个第一子电容中,每一个第一子电容的第二引脚接地, 每一个第一子电容的第一引脚和对应的第一开关的第一端串联,所述对应的第一开关的第二端连接在第一电感的第二引脚与所述第二电感的第一引脚之间,所述M>1。 2. The RF chip according to claim 1, wherein said first capacitor is constituted by M first specific sub-capacitor and a first switch corresponding to the M in the M first sub-capacitor, a second ground pin of each of the first sub-capacitor, a first switch each of the first sub first end of the series capacitor and the corresponding first pin, a second terminal of said corresponding first switch is connected to the first between the second pin and the first pin a second inductor inductance, said M> 1.
3. 如权利要求1所述的射频芯片,其特征在于,所述第二电容具体由N个第二子电容以及N个第二开关构成,在所述N个第二子电容中,每一个第二子电容的第一引脚接地,每一个第二子电容的第二引脚和对应的第二开关的第一端串联,所述对应的第二开关的第二端连接在第二电感的第二引脚与所述第二芯片装置之间,所述N>1。 3. The RF chip according to claim 1, wherein said specific second capacitor consists of N sub-capacitor and a second N second switches, the N second sub-capacitor, each of a second subset of the first pin to ground, the capacitance of each of the second sub first pin and a second end of the series corresponding to the second switch, a second switch connected to the second terminal of the inductor corresponding to the second second pin means and between said second chip, said N> 1.
4. 一种射频电路,其特征在于,所述射频电路包括如权利要求1-3中任一权项所述的射频芯片; 所述射频电路还包括: 配置总线,所述配置总线连接在控制器与寄存器之间,用于传送所述控制器控制信号给所述寄存器。 A radio frequency circuit, wherein, said radio frequency circuit comprises a radio frequency chip in any one of claims 1-3 according to claim 1; the radio frequency circuit further comprising: a bus configuration, the configuration control bus connection between the registers with, for transmitting the control signal to the control register.
5. 如权利要求4所述的射频电路,其特征在于,所述射频电路还包括: 射频前端,和所述射频芯片连接。 5. The radio frequency circuit according to claim 4, wherein said radio frequency circuit further comprising: a radio frequency front end, and connected to the RF chip.
6.如权利要求5所述的射频电路,其特征在于,所述射频电路还包括: 天线,和所述射频前端连接。 6. The radio frequency circuit according to claim 5, characterized in that said radio frequency circuit further comprising: an antenna, and the RF front-end connection.
7.—种电子设备,其特征在于,所述电子设备包括如权利要求4-6中任一权项所述的射频电路; 所述电子设备还包括控制器,所述控制器通过配置总线和所述射频芯片连接,用于发送控制信号控制寄存器。 7.- electronic device, wherein the electronic device comprises a radio frequency circuit of any one of claims 4-6 according to claim 1; said electronic apparatus further comprises a controller, the configuration bus controller, and the RF chip is connected, for transmitting a control signal register.
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