CN105845739A - Two-dimensional nano sheet layer transition metal sulfide bidirectional switch device - Google Patents
Two-dimensional nano sheet layer transition metal sulfide bidirectional switch device Download PDFInfo
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- CN105845739A CN105845739A CN201610325077.5A CN201610325077A CN105845739A CN 105845739 A CN105845739 A CN 105845739A CN 201610325077 A CN201610325077 A CN 201610325077A CN 105845739 A CN105845739 A CN 105845739A
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- -1 transition metal sulfide Chemical class 0.000 title claims abstract description 4
- 229910052723 transition metal Inorganic materials 0.000 title abstract description 6
- 239000002135 nanosheet Substances 0.000 title abstract description 4
- 230000002457 bidirectional effect Effects 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 241000446313 Lamella Species 0.000 claims description 57
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 50
- 230000001052 transient effect Effects 0.000 claims description 49
- 239000010408 film Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 17
- 125000000101 thioether group Chemical group 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 239000002305 electric material Substances 0.000 claims description 7
- 239000007792 gaseous phase Substances 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910052961 molybdenite Inorganic materials 0.000 claims description 6
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910003090 WSe2 Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000002346 layers by function Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910004166 TaN Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- LUAZZOXZPVVGSO-UHFFFAOYSA-N Benzyl viologen Chemical compound C=1C=C(C=2C=C[N+](CC=3C=CC=CC=3)=CC=2)C=C[N+]=1CC1=CC=CC=C1 LUAZZOXZPVVGSO-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Abstract
The invention provides a two-dimensional nano sheet layer transition metal sulfide bidirectional switch device. The device comprises a substrate, a two-dimensional nano sheet layer transition metal sulfide function thin film and left and right electrodes, and a laminated structure is formed. The lateral channel length of the switch device is 10 nm-2 microns, and the width is 10 nm-5 microns. The switch device provided by the invention has the advantages that the switch device is a bidirectional switch device and is connected with a resistive random memory to form a 1S1R structure to solve the phenomenon of crosstalk in a variable resistance memory; the switch device is in a pure lateral structure, and has the advantages of simple manufacture, low cost and easy integration; the performance of the switch device can be modulated by controlling the length and the width of a channel; the switch device has the characteristic of self current limiting; and the current limiting magnitude is up to hundreds of nanoamps, which has an important significance for the research of a low power consumption switch.
Description
Technical field
The present invention relates to inorganic advanced nano film material and microelectronics technology, be specifically related to a kind of two wieners
Rice lamella transient metal sulfide bidirection switching device.
Technical background
Switching device is one of requisite element in semi-conductor industry, and it would generally be with some semiconductor elements
It is connected and is used in conjunction with, control the on off state of device.String is all there is as in traditional semiconductor integrated circuit
The problem disturbed, now can solve this problem by one switching device of series connection.
Common switch mostly is longitudinal device, as vanadium oxide, nickel oxide and As-Te-Ge-Si-N material all have
Switching characteristic.But, the space shared by vertical structure switch is relatively big, and technique is more complicated.By contrast, horizontal
Simple to the switch preparation technology of structure, cost is lower, it is easier to integrated, and this is for microelectronics integrated technique device
Constantly reducing of part size has great importance.
The discovery of Graphene leads us to enter the two-dimensional material epoch, and the research about two-dimensional material in recent years is got over
Come the most.Wherein two-dimensional nano lamella transient metal sulfide obtains due to the optically and electrically characteristic of its uniqueness
Study widely, the direct band gap in the forbidden band of moderate size and monolayer material make its scene effect transistor,
The devices such as sensor, pn-junction and photoelectric sensor can be used widely.
But up to now, still not about the relevant report of the horizontal two-way switch of two-dimensional nano sheet layer material.
Therefore we are using two-dimensional nano lamella transient metal sulfide as raceway groove, form the two-way switch device of transversary
Part.Transversary and the ultra-slim features of two-dimensional nano lamella sulfide material so that taking up room of this device
And integrated level characteristic is the most excellent.
Summary of the invention
It is an object of the invention to for above-mentioned existing problems, it is provided that a kind of two-dimensional nano lamella transient metal sulfide
Bidirection switching device, this switch has self-limiting effect, and its electric current can be limited in hundred na magnitudes；And open
The preparation technology closing device is extremely simple, low cost of manufacture and being easily integrated.
Technical scheme:
A kind of two-dimensional nano lamella transient metal sulfide bidirection switching device, including substrate, two-dimensional nano lamella
Transient metal sulfide function film, left electrode and right electrode also form laminated construction, and described substrate is SiO2、
Si、SiC、GaAs、Si3N4Or sapphire, or for two dimension wide bandgap semiconductor and two dimension insulator or for passing through
The cmos circuit that attachment plug is connected with left and right electrode；Described function film is two-dimensional nano lamella transition
Metal sulfide M oS2、MoSe2、WS2、WSe2, or their lamination heterojunction structure MoS2-MoSe2
Hetero-junctions, MoS2-WS2Hetero-junctions；The thickness of function film is 0.68-30nm；Described left electrode and right electricity
The material of pole is in Pt, Ag, Au, Al, Cu, Ni, Sc, TiN, TaN, Ru, ITO and Ti
Planting or the mixture of two or more arbitrary proportion, thickness is 30-100nm, or electrode is one-dimensional electric around
Material carbon nanotube or two dimension conductive material Graphene, thickness is 0.2-50nm；The lateral channel of switching device
A length of 10nm-2 μm, width be 10nm-5 μm.
A kind of preparation method of described two-dimensional nano lamella transient metal sulfide bidirection switching device, step is as follows:
1) mechanical stripping, chemical gaseous phase deposition, liquid phase stripping, high temperature vulcanized method, hydro-thermal method or atom are used
Layer sedimentation prepares two-dimensional nano lamella transient metal sulfide function film on substrate, use CVD,
ALD growth in situ or by above-mentioned two-dimensional nano lamella transient metal sulfide transfer superposition prepare
MoS2-MoSe2、MoS2-WS2、WS2-WSe2And MoS2-WS2Lamination heterojunction structure function film；
2) use electron beam evaporation, magnetron sputtering, ion beam sputtering or chemical vapour deposition technique at two-dimensional nano
Left electrode and right electrode, wherein the growth gold of electron beam evaporation is prepared on lamella transient metal sulfide function film
The speed belonged to is that 0.3-1nm is per second, uses radio-frequency power supply or DC source growth, work as employing in magnetron sputtering
During radio-frequency power supply growth Cu electrode, power is 80W, pressure is 0.5pa, target-substrate distance is from for 65mm, argon
Flow 30-35sccm, growth time are 2-5min.
Described two-dimensional nano lamella transient metal sulfide function film is annealed, and annealing process temperature is
50-300 DEG C, in argon and hydrogen gas mixture anneal, wherein argon flow amount be 1-1000sccn, hydrogen stream
Amount is 1-500sccm.
Time prepared by described left electrode and right electrode, at left and right electrode and two-dimensional nano lamella transient metal sulfide
One layer of 0.5-5nm oxide layer thin film is first deposited as reducing between contacting metal and functional layer between function film
Tunnel knot, for reducing in device the contact resistance of electrode and two-dimensional nano lamella transient metal sulfide also
Improving device performance, wherein oxide layer is titanium oxide, vanadium oxide or aluminium oxide, and thickness is 0.5nm-5nm.
Prepared two-dimensional nano lamella transient metal sulfide bidirection switching device is by changing switching device
Channel length and the performance of width modulated switch device, wherein channel length scope is 10nm-2 μm, raceway groove
Width is 10nm-5 μm；When reducing the length and width of raceway groove, make by applying less applying bias
Device reaches switching effect thus more reduces power consumption, but channel length and channel width is the least will lead
Cause great leakage current, even can breakdown device, the most reasonably configuration switch device size is highly important.
Prepared two-dimensional nano lamella transient metal sulfide bidirection switching device carrys out modulation switch by doping
Performance, doping method include electric charge transfer doping and interstitial atom instead type doping, electric charge transfer doping is with former
The doping of sub-instead type is all to use doped solution to soak 10-48h, the most again vacuum annealing at 200 DEG C-300 DEG C
2-5h reaches effect of adulterating, and wherein solution used by electric charge transfer doping has polymine or benzyl viologen, atom
Displacement doping uses 1,2 dichloroethane solutions.
A kind of application of described two-dimensional nano lamella transient metal sulfide bidirection switching device, this switching device with
Resistor type random access memory is connected to form 1S1R structure to solve the crosstalk phenomenon in resistance-variable storing device.
The invention have the advantage that
1) this device is bidirection switching device, and its positive and negative direction all can realize the on off state of device,
Can be applicable to bipolar resistance transformation, such as tantalum oxide.As a switch, form 1S1R structure；
2) this device is simple transversary, makes simple, with low cost and be easily integrated；
3) function film of this switch is two-dimensional nano lamella transient metal sulfide, and its thickness in monolayer is the most not
To 1nm, even Multilayer Samples, typically it is not more than 20nm, and the raceway groove of device lateral channel is long
Degree and width are all less, the trend that its now entirely appropriate integrated circuit dimensions constantly reduces；
4) performance of this device can realize modulation by controlling channel length and width；
5) this device has self-limiting character, and current limliting size is to hundred na magnitudes, and this is for low power consumption switch
Study significant.
Accompanying drawing explanation
Fig. 1 is the structural representation of this two-dimensional nano lamella transient metal sulfide two-way switch.
In figure: 1. the left right electrode of electrode 4. of substrate 2. two-dimensional nano lamella transient metal sulfide function film 3..
Fig. 2 is the I-V curve of chemical gaseous phase deposited samples in embodiment
Fig. 3 is the I-V curve of mechanical stripping sample in embodiment
Detailed description of the invention
Now will be further elucidated by the following examples the substantive distinguishing features of the present invention, example is only intended to solve
Release the present invention, and and non-limiting the scope of the present invention.And referring to the drawings, the present invention is described in more detail.
Embodiment 1:
A kind of two-dimensional nano lamella transient metal sulfide bidirection switching device, as it is shown in figure 1, include substrate 1,
Two-dimensional nano lamella transient metal sulfide function film 2, the right electrode of left electrode 3 and 4, described substrate is SiO2；
Described function film is two-dimensional nano lamella MoS prepared by chemical meteorology deposition2, the thickness of function film is
0.68nm；The material of described left electrode and right electrode is Cu, and thickness is 80nm, the lateral channel of switching device
A length of 200nm, width be 1 μm.
A kind of preparation method of described two-dimensional nano lamella transient metal sulfide bidirection switching device, step is as follows:
1) use chemical vapour deposition technique at SiO2Two-dimensional nano lamella transient metal sulfide merit is prepared on substrate
Can film preparation MoS2Thin film；
2) use magnetron sputtering prepare on two-dimensional nano lamella transient metal sulfide function film left electrode and
Right electrode, uses radio-frequency power supply or DC source growth in magnetron sputtering, when using radio-frequency power supply growth Cu
During electrode, power is 80W, pressure is 0.5pa, target-substrate distance from for 65mm, argon flow amount 30-35sccm,
Growth time is 4min, obtains the left electrode of Cu thick for 80nm and right electrode；
3) size of modulation device raceway groove is carried out by electron beam lithography.
Fig. 2 show 1 chemical gaseous phase deposition MoS in embodiment2The I-V of bidirection switching device prepared by sample
Curve.When device applies the positive bias of 0V-4.5V, electric current increases suddenly when 2.2V, electricity now
Pressure is threshold voltage Vth, because the character of function film is changed into low resistance metal state by high resistant insulation state；And work as
During applying bias drops to 0V from 4.5V, electric current is when voltage is about 0.8V, and electric current drastically declines,
Voltage now becomes holding voltage Vhold, because the character of function film has been returned to high resistant insulation state.With
Reason, when applying the reverse biased by-4.5V-0V, electric current is when voltage is-4V, and electric current sharply increases, this
Time voltage be threshold voltage-Vth, the character of function film now is insulated state to low resistance metal state by high resistant
Change, and when applying bias has-4.5V to change to 0V, when-0.5V, electric current reduces suddenly, now
Voltage is for keeping voltage-Vhold, because now the character of function film has been returned to high resistant insulation by low resistance metal state
State.
Embodiment 2:
A kind of two-dimensional nano lamella transient metal sulfide bidirection switching device, as it is shown in figure 1, include substrate 1,
Two-dimensional nano lamella transient metal sulfide function film 2, the right electrode of left electrode 3 and 4 also form laminated construction,
Described substrate is SiO2；Described function film is two-dimensional nano lamella MoS prepared by mechanical stripping2；Function is thin
The thickness of film is 20nm；The material of described left electrode and right electrode is Cu, and thickness is 80nm；Switching device
The a length of 200nm of lateral channel, width be 1 μm.
A kind of preparation method of described two-dimensional nano lamella transient metal sulfide bidirection switching device, step is as follows:
1) use mechanical stripping method at SiO2Two-dimensional nano lamella transient metal sulfide function is prepared thin on substrate
Film preparation MoS2Thin film, is peeled off by adhesive tape and is adhered directly to SiO2On substrate, thickness is 20nm；
2) electron beam evaporation is used to prepare left electrode on two-dimensional nano lamella transient metal sulfide function film
With right electrode, using electron beam evaporation to grow the Ni metal being, deposition rate is about 0.6nm/s, melts 3min in advance
Rear growth 2min-3min, the thickness of the Cu obtained is about 80nm；
3) size of modulation device raceway groove is carried out by electron beam lithography.
In above-mentioned two-way switch preparation method, the material that left electrode 3 uses includes metal material, two dimension conduction
Material and a conductive material.Wherein two dimension conductive material is Graphene, and one-dimensional electric material is CNT.
The preferred Cu of the present embodiment, its thickness can be 30nm-100nm, in other embodiments, described in do left electrode
Other suitable metal materials, two dimension conductive material and one-dimensional electric material can also be included.Wherein two dimension conduction
Material can be Graphene, and one-dimensional electric material can be CNT, and its thickness can be 0.3nm-20nm.
And right electrode 4 is also arbitrarily to select in these metals, and in a device, the selection of left and right electrode is permissible
Identical can also be different.
Fig. 3 is mechanical stripping MoS in embodiment 22The I-V curve of bidirection switching device prepared by sample.When
When device applies the positive bias of 0V-4.5V, electric current increases suddenly when voltage about 1.8V, voltage now
For threshold voltage Vth, because the character of function film is changed into low resistance metal state by high resistant insulation state；And ought be outward
During biasing drops to 0V from 4.5V, electric current is when voltage is about 1V, and electric current drastically declines, this
Time voltage become holding voltage Vhold, because the character of function film has been returned to high resistant insulation state.In like manner,
When applying the reverse biased by-4.5V-0V, electric current is when voltage is-1.7V, and electric current sharply increases, now
Voltage be threshold voltage-Vth, the character of function film now is turned to low resistance metal state by high resistant insulation state
Become, and when applying bias has-4.5V to change to 0V, when-0.2V, electric current reduces suddenly, electricity now
Pressure is for keeping voltage-Vhold, because now the character of function film has been returned to high resistant insulation state by low resistance metal state.
Due to the preparation method of sample used in two embodiments and the difference of thickness, therefore device performance is also
There is obvious difference.
At above-described embodiment 1, in 2, the making of device includes the annealing process to device, and it is possible not only to fall
Low electrode and the contact resistance of function film, and anneal and can also change the sulfuration of two-dimensional nano lamella transition metal
The contact resistance of thing.Annealing temperature can be 50 DEG C-300 DEG C, and wherein argon flow amount can be 1-1000sccm,
Hydrogen flowing quantity can be 1-500sccm (the boiler tube bore of tube furnace used is 60mm, a length of 1200mm).
Above-described embodiment 1, preferably 200 DEG C annealing in 2, the preferred 20sccm of hydrogen flowing quantity, the preferred 200sccm of argon flow amount.
In above-mentioned two-way switch preparation method, described function film is the sulfuration of two-dimensional nano lamella transition metal
The preparation method of thing and lamination hetero-junctions thereof can be mechanical stripping, chemical gaseous phase deposition, liquid phase stripping, high temperature
Arbitrary one in sulfuration method, hydro-thermal method and ald, the present embodiment preferred chemical gaseous phase deposition and machinery
Peel off two kinds of samples.Described function film includes all two-dimensional nano lamella transient metal sulfides, such as MoS2,
Described MoS2The thickness of material can be 0.68nm-30nm, and in other embodiments, described function film is also
Can be other two-dimensional nano lamella transient metal sulfides, or the lamination heterojunction structure of two-dimensional nano lamella,
Such as MoS2-MoSe2、MoS2-WS2And WSe2-MoS2Deng, the wherein two-dimensional nano lamella transition gold of lamination
Belonging to sulfide may make the band structure of hetero-junctions change, so that the performance of device also can obtain phase
Should change, such that it is able to realize the modulation of device performance.In the present embodiment, the preferred mechanical stripping of raceway groove functional layer
The MoS prepared with chemical vapour deposition technique2Sample, wherein the thickness of chemical gaseous phase deposited samples is 0.68nm,
It is monolayer；The thickness of mechanical stripping sample is about 20nm.
In above-mentioned two-way switch preparation method, the material that left electrode 3 uses includes metal material, two dimension conduction
Material and a conductive material.Wherein two dimension conductive material is Graphene, and one-dimensional electric material is CNT.
The preferred Cu of the present embodiment, its thickness can be 30nm-100nm, in other embodiments, described in do left electrode
Other suitable metal materials, two dimension conductive material and one-dimensional electric material can also be included.Wherein two dimension conduction
Material can be Graphene, and one-dimensional electric material can be CNT, and its thickness can be 0.3nm-20nm.
And right electrode 4 is also arbitrarily to select in these metals, and in a device, the selection of left and right electrode is permissible
Identical can also be different.
In foregoing invention embodiment 1, in 2, can be by this bidirection switching device and a bipolar resistance transformation
It is connected, so can form 1S1R structure (i.e. selector adds resistance-variable storing device), thus solve resistive
Crosstalk phenomenon in memorizer.One two-dimensional nano lamella transient metal sulfide two-way switch is deposited with resistive
The structure of reservoir series connection, when applying one higher than threshold voltage VthVoltage, then this switching device obtain open
State, so that the resistive element of series connection with it obtains maximum voltage, now resistive element then achieves high resistant
To the conversion of low-resistance, and after voltage changes, it stills remain in low resistance state.But, when electric current flows through resistive
During device, it will be switched on and off device and be stoped, and blocks because the functional layer in switching device now belongs to height
Edge state.And during reverse scan, at voltage drop as little as-VthBefore, all can by the electric current of resistive device
Receive prevention, because switching device now is in high-impedance state, so make switching device close closed state (0
＜ V ＜ Vth) time leakage current be substantially reduced and simultaneously can also solve the crosstalk phenomenon in device.
Claims (7)
1. a two-dimensional nano lamella transient metal sulfide bidirection switching device, it is characterised in that: include substrate,
Two-dimensional nano lamella transient metal sulfide function film, left electrode and right electrode also form laminated construction, described
Substrate is SiO2、Si、SiC、GaAs、Si3N4Or sapphire, or be two dimension wide bandgap semiconductor and two dimension absolutely
Edge body or be the cmos circuit being connected with left and right electrode by attachment plug；Described function film is two dimension
Nanoscale twins transient metal sulfide MoS2、MoSe2、WS2、WSe2, or their lamination heterojunction structure
MoS2-MoSe2Hetero-junctions, MoS2-WS2Hetero-junctions；The thickness of function film is 0.68-30nm；A described left side
The material of electrode and right electrode be Pt, Ag, Au, Al, Cu, Ni, Sc, TiN, TaN, Ru, ITO and
The mixture of one or more arbitrary proportions in Ti, thickness is 30-100nm, or electrode is around
One-dimensional electric material carbon nanotube or two dimension conductive material Graphene, thickness is 0.2-50nm；Switching device
The a length of 10nm-2 μm of lateral channel, width are 10nm-5 μm.
2. the preparation of a two-dimensional nano lamella transient metal sulfide bidirection switching device as claimed in claim 1
Method, it is characterised in that step is as follows:
1) mechanical stripping, chemical gaseous phase deposition, liquid phase stripping, high temperature vulcanized method, hydro-thermal method or atom are used
Layer sedimentation prepares two-dimensional nano lamella transient metal sulfide function film on substrate, use CVD,
ALD growth in situ or by above-mentioned two-dimensional nano lamella transient metal sulfide transfer superposition prepare
MoS2-MoSe2、MoS2-WS2、WS2-WSe2And MoS2-WS2Lamination heterojunction structure function film；
2) use electron beam evaporation, magnetron sputtering, ion beam sputtering or chemical vapour deposition technique at two-dimensional nano
Left electrode and right electrode, wherein the growth gold of electron beam evaporation is prepared on lamella transient metal sulfide function film
The speed belonged to is that 0.3-1nm is per second, uses radio-frequency power supply or DC source growth, work as employing in magnetron sputtering
During radio-frequency power supply growth Cu electrode, power is 80W, pressure is 0.5pa, target-substrate distance is from for 65mm, argon
Flow 30-35sccm, growth time are 2-5min.
The preparation side of two-dimensional nano lamella transient metal sulfide bidirection switching device the most according to claim 2
Method, it is characterised in that: described two-dimensional nano lamella transient metal sulfide function film is annealed, lehr attendant
Skill temperature is 50-300 DEG C, in argon and hydrogen gas mixture anneal, wherein argon flow amount be 1-1000sccn,
Hydrogen flowing quantity is 1-500sccm.
The preparation side of two-dimensional nano lamella transient metal sulfide bidirection switching device the most according to claim 2
Method, it is characterised in that: time prepared by described left electrode and right electrode, in left and right electrode and two-dimensional nano lamella mistake
Cross and first deposit one layer of 0.5-5nm oxide layer thin film between metal sulfide function film as reducing contacting metal
And the tunnel knot between functional layer, for reducing electrode and two-dimensional nano lamella transient metal sulfide in device
Contact resistance and improve device performance, wherein oxide layer is titanium oxide, vanadium oxide or aluminium oxide, and thickness is
0.5nm-5nm。
The preparation side of two-dimensional nano lamella transient metal sulfide bidirection switching device the most according to claim 2
Method, it is characterised in that: prepared two-dimensional nano lamella transient metal sulfide bidirection switching device is by changing
The channel length of switching device and the performance of width modulated switch device, wherein channel length scope is 10nm-2
μm, channel width are 10nm-5 μm；When reduce raceway groove length and width time, by apply less outside
Biasing makes device reach switching effect thus more reduces power consumption, but channel length and channel width are too
Little will cause great leakage current, even can breakdown device, the most reasonably configuration switch device size is ten
Divide important.
The preparation side of two-dimensional nano lamella transient metal sulfide bidirection switching device the most according to claim 2
Method, it is characterised in that: prepared two-dimensional nano lamella transient metal sulfide bidirection switching device is by doping
Carrying out the performance of modulation switch, doping method includes electric charge transfer doping and the doping of interstitial atom instead type, and electric charge turns
Moving doping with the doping of atom instead type is all to use doped solution to soak 10-48h, the most again at 200 DEG C-300 DEG C
Lower vacuum annealing 2-5h reaches effect of adulterating, and wherein solution used by electric charge transfer doping has polymine or benzyl
Benzyl viologen, atom displacement doping employing 1,2 dichloroethane solution.
7. an application for two-dimensional nano lamella transient metal sulfide bidirection switching device as claimed in claim 1,
It is characterized in that: this switching device and resistor type random access memory are connected to form 1S1R structure and deposit to solve resistive
Crosstalk phenomenon in reservoir.
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