CN105845715B - A kind of super junction power device and its domain structure, preparation method - Google Patents
A kind of super junction power device and its domain structure, preparation method Download PDFInfo
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- CN105845715B CN105845715B CN201610281159.4A CN201610281159A CN105845715B CN 105845715 B CN105845715 B CN 105845715B CN 201610281159 A CN201610281159 A CN 201610281159A CN 105845715 B CN105845715 B CN 105845715B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000001413 cellular effect Effects 0.000 claims description 106
- 238000002347 injection Methods 0.000 claims description 45
- 239000007924 injection Substances 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The present invention relates to power semiconductor fields, more particularly to a kind of super junction power device and its domain structure, preparation method, its domain structure includes active area and positioned at the termination environment of the active area surrounding, and be located at the graphic structure in the termination environment of the active area opposite sides and be distributed using the active area as symmetry axis in mirror symmetry, so that the depletion mode for being located at the termination environment of the active area surrounding is identical.The present invention replaces the Terminal Design of traditional superjunction devices using completely new terminal structure, so that four side of terminal structure is full symmetric, depletion mode is completely the same, improves device job stability；Process flow is simplified simultaneously.
Description
Technical field
The present invention relates to power semiconductor field more particularly to a kind of super junction power device and its domain structures, system
Preparation Method.
Background technique
Power semiconductor has many advantages, such as that switching speed is fast, loss is small, input impedance is high, driving power is small, wide
It is applied to include nearly all fields such as computer field, network communication field, consumer electronics field, industrial control field generally
Electronics manufacturing.
But the conducting resistance of conventional power semiconductor device causes power consumption to sharply increase with pressure resistance growth.With superjunction
(Super-Junction) power device is that this limitation has been broken in the appearance of the charge balance class device of representative, improves conducting
Low on-state power consumption and high blocking voltage can be achieved at the same time in restricting relation between resistance and pressure resistance, therefore rapidly in various high energy
It imitates occasion and obtains application, market prospects are very extensive.
Traditional superjunction devices is in layout design, as shown in Figure 1, its terminal uses the P-N junction structure of completely the same arrangement, this
Structure is more simple from layout design, while possessing lower doping concentration, so that secondary terminal structure possesses higher breakdown
Voltage.However there is also some problems for this structure: terminal and cellular region use P column/N column (P-doped zone/N-type of various concentration
Doped region) make complex process；Use this structure that a lateral terminal can only be made to obtain improving the end that can not but improve other two sides
End.
Summary of the invention
In view of above-mentioned technical problem, the present invention provides a kind of novel super junction power device and its domain structure, preparation side
Method, using the terminal structure that four sides are full symmetric, depletion mode is completely the same, improves device job stability；And in technique not
Different P column dimension and concentration are needed again, and technology difficulty reduces.
The main technical schemes of present invention solution above-mentioned technical problem are as follows:
There is provided a kind of domain structure of super junction power device, which is characterized in that including active area and be located at the active area
The termination environment of surrounding, and the graphic structure being located in the termination environment of the active area opposite sides is using the active area as symmetry axis
It is distributed in mirror symmetry, so that the depletion mode for being located at the termination environment of the active area surrounding is identical.
Preferably, in the domain structure of above-mentioned super junction power device, the termination environment includes first terminal area, the second end
Petiolarea, third terminal area and the 4th termination environment；The first terminal area and the second terminal area are located at the active area
Opposite two sides and be that symmetry axis is distributed in mirror symmetry using the active area, the third terminal area and the 4th termination environment
It is located at the other opposite two sides of the active area and is symmetry axis in mirror symmetry distribution using the active area；
Wherein, in the first terminal area, the second terminal area, the third terminal area and the 4th termination environment
Graphic structure can by be located at any side of the active area the termination environment in graphic structure be with the active area
Center rotates to be formed.
Preferably, the active area, the first terminal area, described in the domain structure of above-mentioned super junction power device
Second terminal area, the third terminal area and the 4th termination environment include what several arranged in parallel and adjacent contact was arranged
Cellular.
Preferably, in the domain structure of above-mentioned super junction power device, the cellular is bar shaped cellular, the first terminal
The bar shaped cellular of the bar shaped cellular in area and the second terminal area extended perpendicularly in the active area
Extending direction；The extending direction of the third terminal area and the bar shaped cellular in the 4th termination environment and described active
The extending direction of the bar shaped cellular in area is identical.
Preferably, the bar shaped cellular shape in the bar shaped cellular and the second terminal area in the first terminal area
The bar shaped cellular at vertical bar shaped cellular region, in the bar shaped cellular and the 4th termination environment in the third terminal area
Horizontal bar shaped cellular region is formed, the vertical bar shaped cellular region intermeshes with the horizontal bar shaped cellular region and has along described
Two central axes of source region are evenly distributed.
Preferably, in the domain structure of above-mentioned super junction power device, the bar shaped cellular in the active area is along it
Length direction extends respectively to be located in the third terminal area and the 4th termination environment of the opposite two sides of the active area,
Using as the bar shaped cellular in the third terminal area and the 4th termination environment.
Preferably, in the domain structure of above-mentioned super junction power device, the third terminal area and the 4th termination environment
Respectively with the active region contact；The bar shaped cellular in the first terminal area and the second terminal area with it is described active
There are spacing a d, the d to be greater than 0 between the bar shaped cellular of edge in area.
Preferably, in the domain structure of above-mentioned super junction power device, each bar shaped cellular includes length and width
Degree is identical respectively and contacts the P column and a N column of setting；And
In the active area, the first terminal area, the second terminal area, the third terminal area and the described 4th
In termination environment, the P column is arranged alternately with the N column.
Preferably, in the domain structure of above-mentioned super junction power device, in the first terminal area, the second terminal
In area, the third terminal area and the 4th termination environment, the length of the P column and the N column is all the same；And
In the active area, the first terminal area, the second terminal area, the third terminal area and the described 4th
In termination environment, the width of the P column and the N column is all the same.
Preferably, in the domain structure of above-mentioned super junction power device, the spacing d is less than the width of the P column.
Preferably, in the domain structure of above-mentioned super junction power device, in the active area, the first terminal area, institute
It states in second terminal area, the third terminal area and the 4th termination environment, the density of the P column and the N column is all the same.
Preferably, in the domain structure of above-mentioned super junction power device, the first terminal area, the second terminal area,
In the third terminal area and the 4th termination environment, closes in the bar shaped cellular of the active area and be provided with injection
Each termination environment is electrically connected by area with the active area.
Preferably, in the domain structure of above-mentioned super junction power device, the injection region is ion implanted region.
Preferably, in the domain structure of above-mentioned super junction power device, the P column surface of the active area is provided with connection
Hole, the connecting hole extend to the P column surface in the third terminal area and the injection region in the 4th termination environment, with
It is connect with the metal layer on the P column surface being set in the third terminal area and the 4th termination environment.
Preferably, in the domain structure of above-mentioned super junction power device, the first terminal area and the second terminal
Be provided with connecting hole in the injection region in area, with the P column table that is set in the first terminal area and the second terminal area
The metal layer in face connects.
Preferably, in the domain structure of above-mentioned super junction power device, the power device further includes corner region, is set to
Four angles limited by the first terminal area, the second terminal area, the third terminal area and the 4th termination environment
It falls, and each corner region is contacted with two termination environments.
Preferably, in the domain structure of above-mentioned super junction power device, the P column density of the corner region and each terminal
The P column density of area and the active area is identical.
Preferably, in the domain structure of above-mentioned super junction power device, the arrangement side of the bar shaped cellular in the corner region
Formula is consistent with the arrangement mode of the bar shaped cellular in the first terminal area and the second terminal area.
Preferably, in the domain structure of above-mentioned super junction power device, the extension side of the bar shaped cellular in the corner region
To place plane perpendicular to the active area, the first terminal area, the second terminal area, the third terminal area and institute
Plane where stating the extending direction of the bar shaped cellular in the 4th termination environment.
Preferably, in the domain structure of above-mentioned super junction power device, the corner region includes first yuan of contact setting
Born of the same parents area and the second cellular region；The arrangement mode of bar shaped cellular in first cellular region and the first terminal area and described
The arrangement mode of the bar shaped cellular in second terminal area is consistent, the arrangement mode of the bar shaped cellular in second cellular region
It is consistent with the arrangement mode of the bar shaped cellular in the third terminal area and the 4th termination environment.
Preferably, in the domain structure of above-mentioned super junction power device, the corner region closes on the first terminal area, institute
In the cell region for stating second terminal area, the third terminal area and the injection region in the 4th termination environment, it is provided with angle
Fall injection region, the corner injection region and the first terminal area, the second terminal area, the third terminal area and described
Injection region in 4th termination environment is joined to form around the annular injection region of the active area.
The present invention also provides a kind of super junction power devices, which is characterized in that including surpassing using as described in above-mentioned any one
Tie the device architecture of the domain structure preparation of power device.
The present invention also provides a kind of preparation methods of super junction power device, which is characterized in that as above in using in a substrate
The domain structure for stating super junction power device described in any one prepares the super junction power device.
Above-mentioned technical proposal has the following advantages that or the utility model has the advantages that the present invention replaces tradition super using completely new terminal structure
The Terminal Design of junction device, so that four side of terminal structure is full symmetric, depletion mode is completely the same, improves the steady of device work
It is qualitative；Different P column/N column dimension and concentration are not needed in technique simultaneously yet, technology difficulty reduces.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the schematic diagram of conventional superjunction structure；
Fig. 2~Figure 10 is the domain structure schematic diagram of super junction power device in the embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.When
So other than these detailed descriptions, the present invention can also have other embodiments.
With reference to Fig. 1, in traditional superjunction (Super-Junction, referred to as SJ) design, terminal area structure exists
Asymmetric design, i.e. left side terminal structure are tradition SJ terminal structure, and downside terminal structure is to improve terminal.However improve terminal
Element layout two sides are only improved, but in addition two sides still use conventional terminal structure to make these terminals in domain opposite
It is weaker (region weakpoint as shown in the figure) in other two lateral terminal, cause device poor work stability.
Therefore, the present invention improves this, and discard tradition SJ terminal structure completely, so that device is in terminal structure pair
Claim, uniformly, performance is improved for pressure resistance.
The power device with terminal structure of the invention is elaborated below with reference to specific embodiment and attached drawing.
Embodiment one:
As shown in Fig. 2, the domain structure of the super junction power device for the present embodiment, the domain structure of the super junction power device
Including active area 1 and around the termination environment that the surrounding of active area 1 is arranged (the upper lateral terminal including 1 upside of active area is arranged in
Area 2, the downside termination environment 22 that 1 downside of active area is arranged in, the left side termination environment 33 that 1 left side of active area is arranged in and setting exist
The right side termination area 3 on 1 right side of active area；It should be noted that upside termination environment, downside termination environment, left side in the present embodiment
Termination environment, right side termination area only represent the upper and lower, left and right around active area setting intuitively found expression in domain structure
Four termination environments can also be referred to as by the termination environment of four sides for distinguishing four side coils to facilitate and illustrate, and in other embodiments
For first to fourth termination environment), the shape of the device architecture in four lateral terminal areas, size and distribution situation are all the same (i.e. with active
Area 1 is distributed for device architecture of the axle position in the termination environment of its opposite sides in mirror symmetry, and any one lateral terminal Qu Junke
It is rotated and is formed centered on active area 1 by remaining any one termination environment).In the present embodiment, because in four lateral terminal areas, under
The structure of lateral terminal area 22 and upside termination environment 2 is completely the same and is arranged about 1 mirror symmetry of active area, 33 He of left side termination environment
The structure in right side termination area 3 is completely the same and is arranged about 1 mirror symmetry of active area, therefore for convenience of displaying, subsequent attached drawing
In only mark upside termination environment 2 and right side termination area 3 in detail.
Referring to Fig. 3, in active area 1, the cellular that is arranged including several arranged in parallel and adjacent contact (such as indicated in figure
L0), each cellular is identical by size and the P column (P0) of parallel contact setting and N column (N0) form.It is preferred real as one
Example is applied, cellular is bar shaped cellular herein, and length in each cellular between P column and N column and width equidimension can be identical.
It should be noted that the cellular design of other topological structures is applied equally to function of the invention in some alternate embodiments
Rate device.
It is shown in Figure 3, positioned at the upside of active area 1 termination environment be upside termination environment 2, including it is several arranged in parallel and
The cellular (such as the TL0 indicated in figure) of adjacent contact setting, each cellular is also identical by size and the P column of parallel contact setting
(TP0) it is formed with N column (TN0), and the extension side of the cellular for extending perpendicularly to active area 1 of the cellular of upside termination environment 2
To.It should be noted that upside termination environment 2 cellular and active area 1 edge cellular not in contact with, between there are a spacing
N1, spacing N1 are less than P column/N column width N0, and (N0 can be not only used for referring to a N column in the present embodiment, it can also be used to refer to N column
Width).
Downside termination environment 22 is located at the downside of active area 1, and structure and the structure of upside termination environment 2 be not completely the same poor
Not (downside termination environment 22 and upside termination environment 2 are that mirror symmetry is arranged with active area 1), therefore repeat no more.
It is right side termination area 3 on the right side of active area 1, including the cellular that several arranged in parallel and adjacent contact is arranged, and
As shown in figure 3, the cellular in the right side termination area 3 is extended to form to the right by the cellular of active area 1.Left side termination environment 33, which is located at, to be had
The structure in the left side of source region 1, structure and right side termination area 3 is completely the same not to have difference (left side termination environment 33 and right side termination
Area 3 is mirror symmetry setting with active area 1), therefore repeat no more.
As a preferred embodiment, the structure of upper/lower/left/right termination environment cellular is consistent herein,
There is only the size of cellular in the difference namely four lateral terminal areas of P column and N column extending direction (intuitively shown as in figure length and
Width) and P column/N column density it is all the same, the size of P column and N column in each cellular is also identical.And it is further, four sides are whole
Cellular size and P column/N column density of petiolarea and cellular size and P column/N column density of active area 1 are also identical.It is intuitive with formula
Statement are as follows: L0=TL0, N0=P0=TN0=TP0, L1=L2.Wherein, L0 represents the width of single cellular in active area 1, because
The cellular of left/right termination environment is extended to form by the cellular left/right of active area 1, therefore L0 can also represent left/right
The width of single cellular in termination environment；TL0 represents the width of single cellular in upper/lower termination environment 2；N0 represents composition cellular
The width of the width of the N column of L0 namely each N column in active area 1 and left/right termination environment；P0 represents composition cellular L0
P column width namely each P column in active area 1 and left/right termination environment width；TN0 represents composition cellular TL0
N column width namely each N column in upper/lower termination environment width；TP0 represents the width of the P column of composition cellular TL0
The width of degree namely each P column in upper/lower termination environment；L1 represents each N column/P column in upper/lower termination environment
Length；L2 represents the length of each N column/P column in left/right termination environment.
In the junction of each termination environment and active area 1, using ion implanting so that termination environment and active area 1 realize electricity
Connection.Specifically, upper/lower termination environment, which is closed on the part cellular region of active area 1, is provided with injection region 20, left/right
Injection region 30 is provided on the part cellular region that termination environment is contacted with active area 1.Injection region 20 and 30 protects all termination environments
It holds in the same current potential, while the silicon face of the position of injection region 20 and 30 (the P column and N of super-junction structure are formed on a silicon interface)
Higher pressure resistance is born, therefore injection region 20 and 30 also protects device surface not occur to puncture in advance as protective layer.
Further, the overlapping of injection region 20 and 30 and P column is by connecting hole (CNT) with the P column for being set to termination environment
The metal layer on surface connects.Wherein, the CNT31 of left/right termination environment is prolonged by the CNT11 for being set to the P column surface of active area 1
Length to injection region 30 is formed, to connect with the metal layer on the P column surface for being set to left/right termination environment.The dotted line K1 along Fig. 3
Sectional view Fig. 4 show on injection region 30 CNT31 with the connection of surface metal 32.The CNT21 of upper/lower termination environment
Independent aperture is formed in injection region 20, to connect with the metal layer on the P column surface for being set to upper/lower termination environment.Along Fig. 3
Sectional view Fig. 5 of middle dotted line K2 shows on injection region 20 CNT21 with the connection of surface metal 22.
Wherein, alternatively distributed P column and N column form the super-junction structure of the super junction power device in above-mentioned domain structure
(Super-Junction)。
Embodiment two:
The domain structure of the super junction power device of the present embodiment and the domain structure in embodiment one are unanimous on the whole, difference
Place is:
Multizone injection mode is used in termination environment and the junction of active area 1, forms multiple injection regions in the termination region.
As shown in fig. 6, on upper/lower termination environment not only include injection region 20, further include multiple sub- injection regions 200,201 ... left sides/
Not only include injection region 30 in right side termination area, further includes multiple sub- injection regions 300,301 ... in injection region 20 and injection region 30
On be again provided with CNT termination environment and active area 1 realized and be electrically connected.20 width of injection region is P1,200 width of injection region
For P2, the spacing with injection region 20 is D2.These injection regions play a part of limiting surface electric field, protect terminal table jointly
Face.
The part isometric structure of the power device with super-junction structure of the present embodiment as shown in fig. 7, when device is reverse-biased,
Terminal is consistent without too big difference with active area in longitudinal pressure-resistant principle, but when lateral, due to the extension of column (Pillar)
Zero point position is directly extended into terminal most edge, so durable is then gradually to extend to active-surface since terminal edge.Its
Laterally also meeting charge balance, therefore is being not in excessively high peak value electric field and causes to puncture in advance.But due to si/sio2
Interface surface state and charge effect make critical breakdown electric field herein too low, so needing to introduce the protection of injection region.
Ion implanting makes terminal zero point be located at uniform domain, exhausts and occurs from same position, while ion implanting protects device table
Face, so that surface is not in puncture in advance.
Referring to Fig. 2, the domain structure of super junction power device of the invention further includes four corner regions (being denoted as 4), if
It is placed in four corners limited by four lateral terminal area of upper/lower/left/right.Because the structure of four corner regions is relatively uniform,
There is only the cellular extending direction differences relative to active area 1, therefore only describe one of corner region 4 herein, but this is not
It is construed as limiting the invention.
It is three kinds of structures of the corner region 4 of the present embodiment referring to Fig. 8~Figure 10.Wherein, the member of corner region 4 shown in Fig. 8
Born of the same parents' arrangement mode is consistent with upper/lower termination environment.Plane where the cellular extending direction of corner region 4 shown in Fig. 9 with it is active
Plane where the cellular extending direction in four lateral terminal area of area 1 and upper/lower/left/right is vertical.Corner region shown in Fig. 10
4 include the first cellular region 41 and the second cellular region 42 of contact；The cellular arrangement mode and upper/lower of first cellular region 41 are whole
Petiolarea is consistent, and the cellular arrangement mode of the second cellular region 42 is consistent with left/right termination environment.
With continued reference to Fig. 8~Figure 10, corner region 4 further includes several injection regions (40,400,401 ...), on termination environment
Injection region is joined to form around the complete injection region of several circles of active area 1.
Wherein, P column/N to guarantee charge balance, P column/N column density of corner region 4 and four lateral terminal areas and active area
Column density is consistent.
Super junction power device of the invention includes the device prepared using the domain structure such as above-mentioned super junction power device
Structure；The preparation method of super junction power device of the invention is mainly included in a substrate using such as above-mentioned super junction power device
The domain structure method for preparing the super junction power device, because above having elaborated the domain structure of super junction power device,
Therefore details are not described herein again.
In conclusion the present invention proposes a kind of super junction power device and its domain structure, preparation method, completely new end is used
End structure substitutes the Terminal Design of traditional superjunction devices, so that four side of terminal structure is full symmetric, uniformly, depletion mode is complete for pressure resistance
It is complete consistent, improve device job stability；Different P column/N column dimension and doping concentration, work are not needed yet in technique simultaneously
Skill difficulty reduces.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (18)
1. a kind of domain structure of super junction power device, which is characterized in that including active area and positioned at the active area surrounding
Termination environment, and the graphic structure being located in the termination environment of the active area opposite sides is in mirror image by symmetry axis of the active area
It is symmetrical, so that the depletion mode for being located at the termination environment of the active area surrounding is identical；
The termination environment includes first terminal area, second terminal area, third terminal area and the 4th termination environment；The first terminal area
The opposite two sides of the active area are located at the second terminal area and are symmetry axis in mirror symmetry using the active area
Distribution, the third terminal area and the 4th termination environment are located at the other opposite two sides of the active area and have with described
Source region is that symmetry axis is distributed in mirror symmetry；
Wherein, the figure in the first terminal area, the second terminal area, the third terminal area and the 4th termination environment
Shape structure can be by the graphic structure in the termination environment of any side of the active area centered on the active area
Rotation is formed；
The active area, the first terminal area, the second terminal area, the third terminal area and the 4th termination environment
It include the cellular that several arranged in parallel and adjacent contact is arranged；
The cellular is bar shaped cellular, the extension side of the bar shaped cellular in the first terminal area and the second terminal area
To the extending direction perpendicular to the bar shaped cellular in the active area；In the third terminal area and the 4th termination environment
The bar shaped cellular extending direction it is identical with the extending direction of the bar shaped cellular in the active area；
The bar shaped cellular in the bar shaped cellular and the second terminal area in the first terminal area forms vertical bar shaped
Cellular region, the bar shaped cellular in the bar shaped cellular and the 4th termination environment in the third terminal area form horizontal bar
Shape cellular region, the vertical bar shaped cellular region and the horizontal bar shaped cellular region intermesh and along two of the active area
Central axes are evenly distributed；
In the first terminal area, the second terminal area, the third terminal area and the 4th termination environment, close on described
Multiple injection regions are provided in the bar shaped cellular of active area, each termination environment is electrically connected with the active area；
Multiple injection regions are parallel to each other, and are spaced pre-determined distance.
2. the domain structure of super junction power device as described in claim 1, which is characterized in that the item in the active area
Shape cellular extends respectively to the third terminal area for being located at the opposite two sides of the active area and described the along its length
In four termination environments, using as the bar shaped cellular in the third terminal area and the 4th termination environment.
3. the domain structure of super junction power device as described in claim 1, which is characterized in that the third terminal area and described
4th termination environment respectively with the active region contact；The bar shaped cellular in the first terminal area and the second terminal area
There are spacing a d, the d to be greater than 0 between the bar shaped cellular of the edge in the active area.
4. the domain structure of super junction power device as claimed in claim 3, which is characterized in that each bar shaped cellular wraps
It includes length and width and distinguishes identical and contact setting a P column and a N column；And
In the active area, the first terminal area, the second terminal area, the third terminal area and the 4th terminal
Qu Zhong, the P column are arranged alternately with the N column.
5. the domain structure of super junction power device as claimed in claim 4, which is characterized in that in the first terminal area, institute
It states in second terminal area, the third terminal area and the 4th termination environment, the length of the P column and the N column is all the same；
And
In the active area, the first terminal area, the second terminal area, the third terminal area and the 4th terminal
The width of Qu Zhong, the P column and the N column is all the same.
6. the domain structure of super junction power device as claimed in claim 5, which is characterized in that the spacing d is less than the P column
Width.
7. the domain structure of super junction power device as claimed in claim 4, which is characterized in that in the active area, described
In one termination environment, the second terminal area, the third terminal area and the 4th termination environment, the P column and the N column
Density is all the same.
8. the domain structure of super junction power device as described in claim 1, which is characterized in that the injection region is ion implanting
Area.
9. the domain structure of super junction power device as described in claim 1, which is characterized in that the P column surface of the active area
It is provided with connecting hole, the connecting hole extends to the third terminal area and the injection region in the 4th termination environment
P column surface, to be connect with the metal layer on the P column surface being set in the third terminal area and the 4th termination environment.
10. the domain structure of super junction power device as described in claim 1, which is characterized in that the first terminal area and
Be provided with connecting hole in the injection region in the second terminal area, with be set to the first terminal area and the second terminal
The metal layer on the P column surface in area connects.
11. the domain structure of super junction power device as described in claim 1, which is characterized in that the power device further includes
Corner region is set to by the first terminal area, the second terminal area, the third terminal area and the 4th termination environment
Four corners limited, and each corner region is contacted with two termination environments.
12. the domain structure of super junction power device as claimed in claim 11, which is characterized in that the P column of the corner region is close
It spends identical as the P column density of each termination environment and the active area.
13. the domain structure of super junction power device as claimed in claim 11, which is characterized in that the bar shaped in the corner region
The arrangement mode one of the arrangement mode of cellular and the first terminal area and the bar shaped cellular in the second terminal area
It causes.
14. the domain structure of super junction power device as claimed in claim 11, which is characterized in that the bar shaped in the corner region
Plane is perpendicular to the active area, the first terminal area, the second terminal area, the third where the extending direction of cellular
Plane where the extending direction of termination environment and the bar shaped cellular in the 4th termination environment.
15. the domain structure of super junction power device as claimed in claim 11, which is characterized in that the corner region includes contact
The first cellular region and the second cellular region being arranged；The arrangement mode of bar shaped cellular in first cellular region and described first is eventually
The arrangement mode of the bar shaped cellular in petiolarea and the second terminal area is consistent, the bar shaped member in second cellular region
The arrangement mode of born of the same parents is consistent with the arrangement mode of the bar shaped cellular in the third terminal area and the 4th termination environment.
16. the domain structure of super junction power device as claimed in claim 11, which is characterized in that the corner region closes on described
First terminal area, the second terminal area, the third terminal area and the injection region in the 4th termination environment cellular region
In domain, it is provided with corner injection region, the corner injection region and the first terminal area, the second terminal area, the third
Injection region in termination environment and the 4th termination environment is joined to form around the annular injection region of the active area.
17. a kind of super junction power device, which is characterized in that including using the superjunction as described in any one of claim 1~16
The device architecture of the domain structure preparation of power device.
18. a kind of preparation method of super junction power device, which is characterized in that in a substrate using as in claim 1~16
The domain structure of super junction power device described in any one prepares the super junction power device.
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| CN102074581A (en) * | 2009-11-19 | 2011-05-25 | 瑞萨电子株式会社 | Semiconductor device and method for manufacturing the same |
| CN102760756A (en) * | 2012-06-30 | 2012-10-31 | 东南大学 | Super junction metallic oxide field effect tube terminal structure with floating field plate |
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| JP2007116190A (en) * | 2006-12-12 | 2007-05-10 | Toshiba Corp | Semiconductor element and its manufacturing method |
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| CN102074581A (en) * | 2009-11-19 | 2011-05-25 | 瑞萨电子株式会社 | Semiconductor device and method for manufacturing the same |
| CN102760756A (en) * | 2012-06-30 | 2012-10-31 | 东南大学 | Super junction metallic oxide field effect tube terminal structure with floating field plate |
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