CN105810710A - OLED device and preparing method thereof - Google Patents
OLED device and preparing method thereof Download PDFInfo
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- CN105810710A CN105810710A CN201410852147.3A CN201410852147A CN105810710A CN 105810710 A CN105810710 A CN 105810710A CN 201410852147 A CN201410852147 A CN 201410852147A CN 105810710 A CN105810710 A CN 105810710A
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Abstract
The invention relates to an OLED device and a preparing method thereof. The OLED device comprises a TFT backboard and a display unit on the TFT backboard. The display unit comprises an anode layer, a cathode layer and an OLED between the anode layer and the cathode layer. The TFT backboard is provided with a bounding wall which surrounds the display unit. An inorganic film is arranged on the TFT backboard and the bounding wall. The display unit is arranged above the inorganic film in the bounding wall. A packaging dielectric layer is deposited above the inorganic film and the display unit. The inorganic film and the packaging dielectric layer form an inner sealing system for surrounding the display unit therein. According to the OLED device and the preparing method, a whole inorganic layer dam can be formed around the OLED, and a longer steam penetrating path can be formed between the packaging dielectric layer and the inorganic film below the packaging dielectric layer, thereby realizing a relatively high steam blocking effect.
Description
Technical field
The present invention relates to a kind of OLED field, particularly relate to a kind of OLED and preparation method thereof.
Background technology
Organic Light Emitting Diode (OrganicLightEmittingDiode, OLED), has excellent properties and extensive use, but because material character, very easily rotten after being subject to steam and oxygen invasion and attack, therefore encapsulation performance is required significantly high.Traditional glass cover or crown cap encapsulation have been carried out good effect, but are applicable to some important or potential application scenarios not to the utmost, such as top emitting OLED Display Technique, flexible OLED Display Technique or flexible OPV etc..Develop thin film encapsulation technology for this industry, with the vacuum-deposited thin-film barrier water oxygen of one layer or some layers, do not block the path of light outgoing or incidence, nor affect on the flexible of substrate.
In the Technology Ways of various thin-film package, all there is its edge sealing problem being inferior to front, steam and oxygen are easily from edge penetration.Therefore, it is necessary to design the encapsulating structure of a kind of New O LED and method to overcome drawbacks described above.
Summary of the invention
It is an object of the invention to provide and a kind of can be better protected from steam and oxygen OLED from edge penetration and preparation method thereof.
For realizing object defined above, the present invention provides a kind of OLED, including TFT backplate and described in be positioned at the display unit in TFT backplate, described display unit includes anode layer, cathode layer and the OLED between anode layer, cathode layer, and described TFT backplate is provided around the enclosure wall of described display unit；Described TFT backplate and enclosure wall are provided with inorganic thin film；Described display unit is positioned at above the inorganic thin film of enclosure wall；The disposed thereon of described inorganic thin film and display unit has encapsulation medium layer；Described inorganic thin film and encapsulation medium layer form inner sealing system and display unit are enclosed in wherein.
As a further improvement on the present invention, the cross section of described enclosure wall is circular arc, triangle, trapezoidal, other polygons or irregular concaveconvex shape.
As a further improvement on the present invention, described encapsulation medium layer includes the inorganic dielectric layer that is deposited on above inorganic thin film and display unit and is deposited on the organic dielectric layer above described inorganic dielectric layer, described inorganic dielectric layer and organic dielectric layer constitute a pair inorganic-organic film encapsulation system, described encapsulation medium layer includes N and described inorganic-organic film is encapsulated system, wherein logarithm N be sized to 0.5 integral multiple, and N >=0.5.
As a further improvement on the present invention, when N >=1.5, described two neighbouring inorganic dielectric layer are gluing, sealing contact above enclosure wall, is held on the organic dielectric layer between two inorganic dielectric layer and is positioned at enclosure wall in the horizontal direction and encloses and set region.
As a further improvement on the present invention, described inorganic thin film is one layer of dielectric layer in the buffer medium layer of TFT backplate structure, gate dielectric layer, interlayer dielectric layer or passivation layer or multilayer dielectricity layer, or sets up the inorganic layer below anode layer.
As a further improvement on the present invention, it is additionally provided with between described anode layer and cathode layer and is positioned at OLED and is provided around upwardly and support cylinder more than OLED, described support cylinder is connected with metal electrode, anode layer concave downward below described support cylinder contacts with metal electrode, described inorganic thin film be provided with between anode layer with metal electrode with the hole contacted with metal electrode for anode layer, being subject to the covering of anode layer above described hole, described hole edge and anode layer fit tightly.
As a further improvement on the present invention, described OLED also includes being positioned at the cap above TFT backplate, is positioned at the substrate below TFT backplate, and peripheral at enclosure wall and be held on the fluid sealant between cap and TFT backplate.
The preparation method that the present invention also provides for a kind of OLED, comprises the following steps:
Step one: form rough enclosure wall when making TFT backplate on substrate；
Step 2: depositing inorganic films in described TFT backplate and enclosure wall；
Step 3: be formed over display unit at described inorganic thin film, described display unit includes anode layer, cathode layer and the OLED between anode layer, cathode layer, and described rough enclosure wall is around described display unit；
Step 4: inorganic thin film above described enclosure wall and the disposed thereon encapsulation medium layer of display unit, cathode layer and the anode layer of inorganic thin film above described enclosure wall, encapsulation medium layer and OLED both sides form inner sealing system and OLED are enclosed in wherein.
As a further improvement on the present invention, in step 2, described inorganic thin film is one layer of dielectric layer in the buffer medium layer in TFT backplate, gate dielectric layer, interlayer dielectric layer or passivation layer or multilayer dielectricity layer, or the inorganic layer additionally individually done below anode layer.
As a further improvement on the present invention, in step 4, depositing encapsulation dielectric layer includes: first at inorganic thin film and display unit disposed thereon inorganic dielectric layer, again at described inorganic dielectric layer disposed thereon organic dielectric layer, described inorganic dielectric layer and organic dielectric layer constitute a pair inorganic-organic film encapsulation system, described encapsulation medium layer includes deposition N and described inorganic-organic film is encapsulated system, wherein logarithm N be sized to 0.5 integral multiple, and N >=0.5.
The present invention, by forming enclosure wall when making TFT backplate, then deposits one layer of inorganic thin film on enclosure wall and whole TFT plane, carries out OLED technique afterwards again.Inorganic thin film and encapsulation medium layer form an inner sealing system and display unit are enclosed in wherein.So arrange, it is possible to around OLED, form complete inorganic layer dykes and dams, and make the contact surface between encapsulation medium layer and inorganic thin film form longer steam permeation pathway, thus realizing better stopping the effect of steam.
Accompanying drawing explanation
Fig. 1 is the structural representation of OLED the first embodiment of the present invention.
Fig. 2 is the structural representation of OLED of the present invention first embodiment specific embodiment.
Fig. 3 is the structural representation of OLED the second embodiment of the present invention.
Detailed description of the invention
Describe the present invention below with reference to specific embodiment shown in the drawings.What deserves to be explained is, hereafter described embodiment is not limiting as the present invention, and those of ordinary skill in the art is all contained in protection scope of the present invention according to the made structure of these embodiments, method or conversion functionally.
Refer to shown in Fig. 1 to Fig. 3, described OLED 100 includes TFT backplate 1 and is positioned at the display unit in TFT backplate 1, described display unit includes anode layer 5, cathode layer 6 and the OLED7 between anode layer 5, cathode layer 6, and described TFT backplate 1 is provided with around the enclosure wall 8 around described display unit；Described TFT backplate 1 and enclosure wall 8 are provided with inorganic thin film 101；Described display unit is positioned at above the inorganic thin film 101 of enclosure wall 8；Inorganic thin film 101 and the disposed thereon of display unit above described enclosure wall 8 have encapsulation medium layer 3, and cathode layer 6 and the anode layer 5 of inorganic thin film 101 above described enclosure wall 8, encapsulation medium layer 3 and OLED7 both sides form inner sealing system and OLED7 is enclosed in wherein.So arranging, described inner sealing system can effectively prevent steam and oxygen from entering OLED7 from front；And fit tightly above the rough enclosure wall 8 that described inorganic thin film 101 and encapsulation medium layer 3 are around display unit, making the contact surface between the inorganic thin film 101 above described enclosure wall 8 and encapsulation medium layer 3 is rough curved surface, and described rough curved surface has bigger contact area compared to smooth plane, therefore, described rough contact surface makes to form longer steam steam permeation pathway from edge penetration to OLED7 between encapsulation medium layer 3 and inorganic thin film 101 contact, thus realize better stopping the effect of steam at edge；On the other hand, described rough enclosure wall 8 is to be formed when making TFT backplate, then on enclosure wall 8 and whole TFT plane, deposit one layer of inorganic thin film 101, carry out OLED7 technique afterwards again, so arrange, with of the prior art completing after OLED7 technique in OLED7 device surrounding again through compared with mask forms the technical scheme of enclosure wall 8, the present invention can form more complete inorganic layer dykes and dams around OLED7, it is prevented that the infiltration of steam and oxygen.
The cross section of the rough enclosure wall 8 around described OLED7 is circular arc, triangle, trapezoidal, other polygons or irregular concaveconvex shape.In the present embodiment, described enclosure wall 8 is overshooting shape, and cross section is trapezoidal, and described enclosure wall 8 is two, so arrange, it is possible to around OLED7, form rough enclosure wall 8 can stop the entrance of steam and oxygen preferably, and form longer steam permeation pathway at the edge of OLED 100.In other embodiments, described enclosure wall 8 can also combine with depression for recess or projection, and described cross section can also be other shapes, and the quantity of described enclosure wall 8 can be one or more, can reach above-mentioned purpose equally.
Described encapsulation medium layer 3 includes the first inorganic dielectric layer 301 of being deposited on above inorganic thin film 101 and display unit and is deposited on the first organic dielectric layer 302 above the first inorganic interlayer 301, described first inorganic dielectric layer 301 and the first organic dielectric layer 302 constitute a pair inorganic-organic film encapsulation system, described encapsulation medium layer 3 includes N and described inorganic-organic film is encapsulated system, wherein logarithm N be sized to 0.5 integral multiple, and N >=0.5.So arranging, the first inorganic dielectric layer 301 of described inorganic thin film 101 and top is inorganic matter material, and described inorganic thin film 101 can be made more tight with the first inorganic dielectric layer 301 of top deposition above enclosure wall 8；Furthermore, the sealing space that described inorganic thin film 101 and the first inorganic dielectric layer 301 are formed has, compared to Organic substance material formation sealing space, the effect better intercepting steam and oxygen；Another further aspect, inorganic-organic film that described first inorganic dielectric layer 301 is constituted with the first organic dielectric layer 302 encapsulation system can make that deposition structure is more smooth, reduce into membrane stress.In other embodiments, described encapsulation medium layer 3 can be all inorganic layer, all be the inorganic matter of organic layer or other forms and organic alternating structure.Described inorganic layer can be silicon nitride or the material such as silicon oxide, aluminium oxide.
Fig. 1 is to shown in 3 for ginseng, concrete, and when N >=1.5, described two neighbouring inorganic dielectric layer are gluing, sealing contact above enclosure wall 8, described in be held on the organic dielectric layer between two inorganic dielectric layer and be positioned at enclosure wall 8 in the horizontal direction and enclose and set region.In the present embodiment, described encapsulation medium layer 3 includes two pairs of inorganic-organic film encapsulation systems, namely includes the first inorganic dielectric layer 301, is deposited on the first organic dielectric layer 302 above the first inorganic dielectric layer 301, is deposited on the second inorganic dielectric layer 303 above the first organic dielectric layer 302 and is deposited on the second organic dielectric layer 304 above the second inorganic dielectric layer 303.Wherein the first inorganic dielectric layer 301 contacts with the second inorganic dielectric layer 303 gluing, sealing above enclosure wall 8, and the first organic dielectric layer 302 being held between the first inorganic dielectric layer 301 and the second inorganic dielectric layer 303 is positioned at enclosure wall 8 and encloses and set region, so arrange, first inorganic dielectric layer 301 and the second inorganic dielectric layer 303, lower floor's inorganic dielectric layer 101 can fit tightly with each other at enclosure wall 8, thus realizing better obturation effect.And from another angle, if described first organic dielectric layer 302 extends between the first inorganic dielectric layer 301 and the second inorganic dielectric layer 303 above enclosure wall 8, owing to the first organic dielectric layer 302 is made up of organic material, its anti-permeability is not so good as inorganic, and steam penetrates into easily via the first organic dielectric layer 302 and makes described encapsulation medium layer 3 cannot realize good anti-steam effect between described first inorganic dielectric layer 301 and the second inorganic dielectric layer 303.In other embodiments, described encapsulation medium layer 3 includes N and inorganic-organic film is encapsulated system, and outermost layer can be N inorganic dielectric layer or N organic dielectric layer, if outermost layer is N organic dielectric layer, described N organic dielectric layer can extend to and not affect the anti-steam effect within described encapsulation medium layer 3 above enclosure wall 8.
It is additionally provided with between described anode layer 5 and cathode layer 6 and is positioned at OLED7 and is provided around upwardly and support cylinder 2 more than OLED7, described support cylinder 2 is connected with metal electrode 4, and anode layer 5 concave downward below described support cylinder 2 contacts with metal electrode 4.Described support cylinder 2 can be the material such as photoresist in order to support the mask plate of top and effectively protect described mask plate not to be scratched, and described display unit can downwards and metal electrode 4 in electrical contact.
Described inorganic thin film 101 be provided with between anode layer 5 with metal electrode 4 with the hole 1011 contacted with metal electrode 4 for anode layer 5, be subject to the covering of anode layer 5 above described hole 1011.So arrange, the anode layer 5 of concave downward can be made to realize through described inorganic thin film 101 hole 1011 and metal electrode 4 good in electrical contact, and above described hole 1011, it is subject to the covering of anode layer 5, if steam permeates up, by hole 1011, the stop that can be subject to anode layer 5 and realizes good anti-steam effect.Preferably, described hole 1011 edge and anode layer 5 fit tightly.So arrange, steam can be avoided to permeate up from hole 1011 and damage OLED7.
Please join shown in Fig. 1 and Fig. 3, for the structural representation of first embodiment of the invention and the second embodiment.In said embodiment, described inorganic thin film 101 can be one layer of dielectric layer in the buffer medium layer of TFT backplate 1 structure, gate dielectric layer, interlayer dielectric layer, passivation layer or multilayer dielectricity layer, it is also possible to is set up the inorganic layer below anode layer 5.Described inorganic thin film 101 can be the materials such as silicon nitride, silicon oxide, aluminium oxide.So arrange, described OLED 100 simple in construction can be made.Additionally, please join shown in Fig. 1, in the first embodiment, described hole 1011 is in the vertical direction between anode layer 5 and the metal electrode 4 of depression, and in the horizontal direction, the area of described hole 1011 and the contact area of anode layer 5 and metal electrode 4, less than metal electrode 4 upper surface area and anode layer 5 bottom surface area, and make that there is between anode layer 5 and metal electrode 4 good electrical contact performance, so arrange, inorganic thin film 101 can be made, the cathode layer 6 of encapsulation medium layer 3 and OLED7 both sides and anode layer 5 form inner sealing system and realize better seal effect.
Please join shown in Fig. 2, for the structural representation of OLED 100 first embodiment specific embodiment of the present invention, described OLED 100 is provided with the cap 91 above TFT backplate 1, substrate 92 below TFT backplate 1 and the fluid sealant 93 in order to seal described cap 91 and TFT backplate 1 that is peripheral at enclosure wall 8 and that be held between cap 91 and TFT backplate 1.So arranging, described OLED 100 outer wrap can be got up to realize better seal effect by described cap 91, substrate 92 and fluid sealant 93, effectively prevents steam and oxygen from entering OLED 100.And OLED 100 has good sealing effectiveness and makes to fill the filler such as transparent organic or liquid desiccant between described cap 91, TFT backplate 1 and fluid sealant 93, the packaged type of filler is added compared to fluid sealant in prior art 93, present invention reduces the technology difficulty of encapsulation, breach the bottleneck such as stress problem, sealing effectiveness produced by prior art packaged type so that described OLED 100 can be applied more broadly on large scale AMOLED7 screen body or in flexible screen.
Concrete, the noble gases such as nitrogen can also be filled between described cap 91, TFT backplate 1 and fluid sealant 93, so arrange, structure between cap 91, TFT backplate 1 and fluid sealant 93 can be made more stable.Described fluid sealant 93 is epoxide-resin glue or melted glass etc..So arranging, epoxide-resin glue or melted glass are subject to the irradiation of ultraviolet light or laser after being positioned over the place to be sealed of cap 91 and TFT backplate 1 can make to realize good sealing effectiveness between cap 91, TFT backplate 1.
Encapsulation medium layer 3 above described OLED7 is by low temperature thin film deposition method, and described low temperature is lower than 100 degrees Celsius, so arranges, and can avoid producing high temperature in the film deposition process of encapsulation medium layer 3 and damaging OLED7.
The invention also discloses a kind of method manufacturing described OLED, described New O LED encapsulation method includes step one: form rough enclosure wall 8 when making TFT backplate 1；Step 2: depositing inorganic films 101 in described TFT backplate 1 and enclosure wall 8；Step 3: be formed over display unit at described inorganic thin film 101, described display unit includes anode layer 5, cathode layer 6 and the OLED7 between anode layer 5, cathode layer 6, and described rough enclosure wall 8 is around described display unit；Step 4: inorganic thin film 101 above described enclosure wall 8 and the disposed thereon encapsulation medium layer 3 of display unit, cathode layer 6 and the anode layer 5 of inorganic thin film 101 above described enclosure wall 8, encapsulation medium layer 3 and OLED7 both sides form inner sealing system and OLED7 are enclosed in wherein.So arrange, it is possible to around OLED, form complete inorganic layer dykes and dams, and can form longer steam permeation pathway between encapsulation medium layer and inorganic thin film contact below, thus the effect of realization better stop steam.
In step 2, described inorganic thin film 101 is one layer of dielectric layer in the buffer medium layer in TFT backplate 1, gate dielectric layer, interlayer dielectric layer or passivation layer or multilayer dielectricity layer, so arranges, can Simplified flowsheet, reduce processing step.Described inorganic thin film 101 can also is that the inorganic layer additionally individually done below anode layer 5.So arrange, also can play good waterproof sealing effect.
In step 4, depositing encapsulation dielectric layer 3 includes: first at inorganic thin film 101 and display unit disposed thereon inorganic dielectric layer, again at described inorganic dielectric layer disposed thereon organic dielectric layer, described inorganic dielectric layer and organic dielectric layer constitute a pair inorganic-organic film encapsulation system, described encapsulation medium layer 3 includes deposition N and described inorganic-organic film is encapsulated system, wherein logarithm N be sized to 0.5 integral multiple, and N >=0.5.So arrange, it is possible to around OLED, form complete inorganic layer dykes and dams, and can form longer steam permeation pathway between encapsulation medium layer and inorganic thin film contact below, thus the effect of realization better stop steam.So arranging, the first inorganic dielectric layer 301 of described inorganic thin film 101 and top is inorganic matter material, and described inorganic thin film 101 can be made more tight with the first inorganic dielectric layer 301 of top deposition above enclosure wall 8；Furthermore, the sealing space that described inorganic thin film 101 and the first inorganic dielectric layer 301 are formed has, compared to Organic substance material formation sealing space, the effect better intercepting steam and oxygen；Another further aspect, inorganic-organic film that described first inorganic dielectric layer 301 is constituted with the first organic dielectric layer 302 encapsulation system can make that deposition structure is more smooth, reduce into membrane stress.
In sum, the present invention, by forming rough enclosure wall when making TFT backplate, then deposits one layer of inorganic thin film on enclosure wall and whole TFT plane, carries out OLED technique afterwards again.Cathode layer and the anode layer that can make the inorganic thin film above enclosure wall, encapsulation medium layer and OLED both sides form an inner sealing system and OLED are enclosed in wherein, so arrange, complete inorganic layer dykes and dams can be formed around OLED, and encapsulation medium layer and below can form longer steam permeation pathway between inorganic thin film contact, thus realizing the effect of better stop steam.In other embodiments, the present invention is also suitable for and is not limited to LTPS, top-gated TFT and bottom gate TFT etc..
It is to be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should be made as a whole by those skilled in the art, technical scheme in each embodiment through appropriately combined, can also form other embodiments that it will be appreciated by those skilled in the art that.
The a series of detailed description of those listed above is only for illustrating of the feasibility embodiment of the present invention; they also are not used to limit the scope of the invention, and all should be included within protection scope of the present invention without departing from the skill of the present invention equivalent implementations made of spirit or change.
Claims (10)
1. an OLED, including TFT backplate (1) and be positioned at the display unit in described TFT backplate (1), described display unit includes anode layer (5), cathode layer (6) and is positioned at the OLED (7) between anode layer (5), cathode layer (6), it is characterised in that:
Described TFT backplate (1) is provided around the enclosure wall (8) of described display unit；
Described TFT backplate (1) and enclosure wall (8) are provided with inorganic thin film (101)；
Described display unit is positioned at inorganic thin film (101) top of enclosure wall (8)；
The disposed thereon of described inorganic thin film (101) and display unit has encapsulation medium layer (3)；
Described inorganic thin film (101) and encapsulation medium layer (3) form inner sealing system and display unit are enclosed in wherein.
2. OLED according to claim 1, it is characterised in that: the cross section of described enclosure wall (8) is circular arc, triangle, trapezoidal, other polygons or irregular concaveconvex shape.
3. OLED according to claim 1, it is characterized in that: described encapsulation medium layer (3) includes the inorganic dielectric layer that is deposited on above inorganic thin film (101) and display unit and is deposited on the organic dielectric layer above described inorganic dielectric layer, described inorganic dielectric layer and organic dielectric layer constitute a pair inorganic-organic film encapsulation system, described encapsulation medium layer (3) includes N and described inorganic-organic film is encapsulated system, wherein logarithm N be sized to 0.5 integral multiple, and N >=0.5.
4. OLED according to claim 3, it is characterized in that: when N >=1.5, described two neighbouring inorganic dielectric layer, in the gluing, sealing contact of enclosure wall (8) top, are held on the organic dielectric layer between two inorganic dielectric layer and are positioned at enclosure wall (8) in the horizontal direction and enclose and set region.
5. OLED according to claim 1, it is characterized in that: described inorganic thin film (101) is one layer of dielectric layer in the buffer medium layer of TFT backplate (1) structure, gate dielectric layer, interlayer dielectric layer or passivation layer or multilayer dielectricity layer, or set up in the inorganic layer of anode layer (5) lower section.
6. OLED according to claim 1, it is characterized in that: be additionally provided with between described anode layer (5) and cathode layer (6) and be positioned at OLED (7) and be provided around upwardly and more than the support cylinder (2) of OLED (7), described support cylinder (2) is connected with metal electrode (4), anode layer (5) concave downward of described support cylinder (2) lower section contacts with metal electrode (4), described inorganic thin film (101) be provided with between anode layer (5) with metal electrode (4) with the hole (1011) contacted with metal electrode (4) for anode layer (5), described hole (1011) top is subject to the covering of anode layer (5), described hole (1011) edge and anode layer (5) fit tightly.
7. OLED according to claim 1, it is characterized in that: described OLED also includes being positioned at the cap (91) of TFT backplate (1) top, is positioned at the substrate (92) of TFT backplate (1) lower section, and is positioned at the fluid sealant (93) that enclosure wall (8) is peripheral and is held between cap (91) and TFT backplate (1).
8. the preparation method of an OLED, it is characterised in that: comprise the following steps:
Step one: form rough enclosure wall (8) when making TFT backplate (1) on substrate (92)；
Step 2: at the upper depositing inorganic films (101) of described TFT backplate (1) and enclosure wall (8)；
Step 3: be formed over display unit at described inorganic thin film (101), described display unit includes anode layer (5), cathode layer (6) and is positioned at the OLED (7) between anode layer (5), cathode layer (6), and described rough enclosure wall (8) is around described display unit；
Step 4: at inorganic thin film (101) and disposed thereon encapsulation medium layer (3) of display unit of described enclosure wall (8) top, cathode layer (6) and anode layer (5) the formation inner sealing system of the inorganic thin film (101) of described enclosure wall (8) top, encapsulation medium layer (3) and OLED (7) both sides are enclosed in OLED (7) wherein.
9. New O LED encapsulation method according to claim 8, it is characterized in that: in step 2, described inorganic thin film (101) is one layer of dielectric layer in the buffer medium layer in TFT backplate (1), gate dielectric layer, interlayer dielectric layer or passivation layer or multilayer dielectricity layer, or the inorganic layer additionally individually done below anode layer (5).
10. New O LED encapsulation method according to claim 8, it is characterized in that: in step 4, depositing encapsulation dielectric layer (3) including: first at inorganic thin film (101) and display unit disposed thereon inorganic dielectric layer, again at described inorganic dielectric layer disposed thereon organic dielectric layer, described inorganic dielectric layer and organic dielectric layer constitute a pair inorganic-organic film encapsulation system, described encapsulation medium layer (3) includes deposition N and described inorganic-organic film is encapsulated system, wherein logarithm N be sized to 0.5 integral multiple, and N >=0.5.
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