CN105776124A - MEMS device and preparation method thereof, and electronic device - Google Patents

MEMS device and preparation method thereof, and electronic device Download PDF

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Publication number
CN105776124A
CN105776124A CN201410837787.7A CN201410837787A CN105776124A CN 105776124 A CN105776124 A CN 105776124A CN 201410837787 A CN201410837787 A CN 201410837787A CN 105776124 A CN105776124 A CN 105776124A
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China
Prior art keywords
backboard
vibrating diaphragm
mems
semiconductor substrate
cavity
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CN201410837787.7A
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Chinese (zh)
Inventor
何昭文
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN201410837787.7A priority Critical patent/CN105776124A/en
Publication of CN105776124A publication Critical patent/CN105776124A/en
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Abstract

The invention relates to a MEMS device and a preparation method thereof, and an electronic device, wherein the MEMS device comprises a semiconductor substrate, a backboard, a vibrating diaphragm and a sacrificial layer; the backboard is located above the semiconductor substrate; the vibrating diaphragm is located above the backboard, and comprises a first vibrating diaphragm and a second vibrating diaphragm which are set at intervals; the sacrificial layer is located between the vibrating diaphragm and the backboard; a cavity is formed between the first vibrating diaphragm and the backboard, and a back cavity is formed in the semiconductor substrate under the cavity; a first electrode contact is formed on the first vibrating diaphragm, and a second electrode contact is formed on the second vibrating diaphragm. According to the invention, in an MEMS microphone, another capacitor is designed for being connected with a capacitor of the MEMS in series, voltage allocated to the capacitor of the MEMS microphone is regulated through regulation of a capacitance value of the another capacitor, thus, voltage allocated to the MEMS microphone is the working voltage of the MEMS microphone, IC circuits may be produced uniformly, cost is reduced, and volume production is facilitated.

Description

A kind of MEMS and preparation method thereof, electronic installation
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and preparation method thereof, electronic installation.
Background technology
Development along with semiconductor technology, on the market of sensor (sensor) series products, smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming most main flow, state-of-the-art technology, and along with the renewal of technology, and direction little towards size, that performance is high and low in energy consumption is developed.
Wherein, MEMS sensor is widely used in automotive electronics: such as TPMS, engine oil pressure sensor, automobile brake system air pressure probe, air intake manifold of automotive engine pressure transducer (TMAP), common rail for diesel engine pressure transducer;Consumer electronics: such as tire gauge, sphygomanometer, cupboard scale, health scale, washing machine, dish-washing machine, electric refrigerator, microwave oven, baking box, vacuum cleaner pressure transducer, A/C pressure sensor, washing machine, water dispenser, dish-washing machine, solar water heater Liquid level pressure transducer;Industrial electronic: such as digital pressure gauge, digital stream scale, industry batching weighing etc., electronic audiovisual field: the equipment such as mike.
In MEMS field, the operation principle of capacitive MEMS device is to be produced the change of electric capacity by the motion of vibrating diaphragm (Membrane), utilizing capacitance change to carry out computing and work, existing conventional MEMS microphone includes vibrating diaphragm, backboard and is positioned at the back of the body chamber composition below backboard.Acoustical signal is converted to the signal of telecommunication by vibrating diaphragm.
For the MEMS microphone that design (such as vibrating diaphragm size, vibrating diaphragm and the spacing etc. of backboard) is different, required running voltage is different, it is necessary to the MEMS microphone for various different designs designs different external circuits to provide corresponding running voltage.
Therefore, prior art needs IC circuit supporting accordingly for the MEMS microphone of different designs, not only increases design and manufacture cost, be unfavorable for mass production, need current described MEMS microphone and preparation method thereof is improved further, in order to eliminate this problem.
Summary of the invention
Introducing the concept of a series of reduced form in Summary, this will further describe in detailed description of the invention part.The Summary of the present invention is not meant to the key feature and the essential features that attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention is in order to overcome the problem of presently, there are, it is provided that a kind of MEMS, including:
Semiconductor substrate;
Backboard, is positioned at described semiconductor substrate;
Vibrating diaphragm, is positioned at above described backboard, including spaced first vibrating diaphragm and the second vibrating diaphragm;
Sacrifice layer, between described vibrating diaphragm and described backboard;
Wherein, between described first vibrating diaphragm and described backboard, it is formed with cavity, the described Semiconductor substrate below described cavity is formed back of the body chamber;
Described first vibrating diaphragm is formed the first electrode contact, described second vibrating diaphragm is formed with the second electrode contact.
Alternatively, described second vibrating diaphragm surrounds described first vibrating diaphragm.
Alternatively, described first vibrating diaphragm is rounded, and described second vibrating diaphragm is in having annular jaggy, and described second vibrating diaphragm surrounds described first vibrating diaphragm.
Alternatively, described first vibrating diaphragm is provided with the first pad;
Described second vibrating diaphragm is provided with the second pad.
Alternatively, described first vibrating diaphragm, described backboard below described first vibrating diaphragm and described cavity form the first electric capacity;
Described backboard below described second vibrating diaphragm, described second vibrating diaphragm and described sacrifice layer between the two form the second electric capacity.
Alternatively, it is provided with insulating barrier between described Semiconductor substrate and described backboard.
Alternatively, described MEMS is MEMS microphone.
Alternatively, the described backboard below described first vibrating diaphragm or described first vibrating diaphragm is formed with some openings.
Present invention also offers a kind of MEMS, including:
Semiconductor substrate;
Vibrating diaphragm, is positioned at described semiconductor substrate;
Backboard, is positioned at above described vibrating diaphragm, including spaced first backboard and the second backboard;
Sacrifice layer, between described vibrating diaphragm and described backboard;
Wherein, between described first backboard and the described vibrating diaphragm below described first backboard, it is formed with cavity, the described Semiconductor substrate below described cavity is formed back of the body chamber;
Described first backboard is formed with the first electrode contact, described second backboard is formed with the second electrode contact.
Alternatively, described second backboard surrounds described first backboard.
Alternatively, described first backboard is rounded, and described second backboard is in having annular jaggy, and described second backboard surrounds described first backboard.
Alternatively, described first backboard is provided with the first pad;
Described second backboard is provided with the second pad.
Alternatively, described first backboard, described vibrating diaphragm below described first backboard and described cavity form the first electric capacity;
Described vibrating diaphragm below described second backboard, described second backboard and described sacrifice layer between the two form the second electric capacity.
Alternatively, it is provided with insulating barrier between described Semiconductor substrate and described backboard.
Alternatively, described MEMS is MEMS microphone.
Alternatively, the described vibrating diaphragm below described first backboard or described first backboard is formed with some openings.
The preparation method that the invention provides a kind of MEMS, including:
Step S1: Semiconductor substrate is provided, is formed with backboard on the semiconductor substrate;
Step S2: sacrificial material layer, to cover described backboard;
Step S3: form diaphragm materials layer in described sacrificial material layer and pattern, to obtain the first vibrating diaphragm and second vibrating diaphragm of spaced setting;
Step S4: bonding operation wafer on described first vibrating diaphragm and described second vibrating diaphragm;
Step S5: obtain element in the described step S4 that reverses, and pattern described Semiconductor substrate, to form the back of the body chamber exposing the described backboard above described first vibrating diaphragm, removes the described sacrificial material layer between described first vibrating diaphragm and described backboard, to form cavity;
Step S6: the element obtained in inversion step S5, removes described operation wafer.
Alternatively, in described step S3, pattern described diaphragm materials layer, with described second vibrating diaphragm of conglobate described first vibrating diaphragm of shape and the annular around described first vibrating diaphragm.
Alternatively, in described step S1, between described Semiconductor substrate and described backboard, it is also formed with insulating barrier, in described insulating barrier and described backboard, is formed with some openings.
Alternatively, in described step S4, between described first vibrating diaphragm, described second vibrating diaphragm and described operation wafer, it is also formed with passivation layer.
Alternatively, after described step S6, described method also includes:
Step S7: form the first pad and the second pad respectively on described first vibrating diaphragm and described second vibrating diaphragm.
The preparation method that the invention provides a kind of MEMS, including:
Step S1: Semiconductor substrate is provided, is formed with vibrating diaphragm on the semiconductor substrate;
Step S2: sacrificial material layer, to cover described vibrating diaphragm;
Step S3: form backboard in described sacrificial material layer and pattern, to obtain the first backboard and second backboard of spaced setting;
Step S4: bonding operation wafer on described first backboard and described second backboard;
Step S5: obtain element in the described step S4 that reverses, and pattern described Semiconductor substrate, to form the back of the body chamber exposing the described vibrating diaphragm above described first backboard, remove described sacrificial material layer between described first backboard and the described vibrating diaphragm of top, to form cavity;
Step S6: the element obtained in inversion step S5, removes described operation wafer.
Alternatively, in described step S1, between described Semiconductor substrate and described vibrating diaphragm, it is also formed with insulating barrier, in described vibrating diaphragm and described insulating barrier, forms some openings.
Alternatively, in described step S3, pattern described backboard, with described second backboard of conglobate described first backboard of shape and the annular around described first backboard.
Alternatively, after described step S6, described method also includes:
Step S7: form the first pad and the second pad respectively on described first backboard and described second backboard.
Alternatively, in described step S4, between described first backboard, described second backboard and described operation wafer, it is also formed with passivation layer.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is to solve problems of the prior art, provide a kind of new MEMS microphone, described MEMS microphone designs another electric capacity and this MEMS microphone capacitances in series, reach to regulate the voltage of distribution on MEMS microphone electric capacity by regulating the capacitance of another electric capacity, making the voltage being assigned in MEMS microphone is its running voltage, therefore it is no longer necessary to the MEMS microphone into different designs and designs different IC circuit, IC circuit can be unified to produce, reduce cost, be conducive to mass production.
Accompanying drawing explanation
The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, it is used for explaining assembly of the invention and principle.In the accompanying drawings,
The preparation process schematic diagram of MEMS in Fig. 1 a-1h embodiment of the invention;
Fig. 2 is Fig. 1 h sectional view along A-A direction;
Fig. 3 is the electrical block diagram of MEMS described in the embodiment of the invention;
Fig. 4 is the structural representation of MEMS described in the embodiment of the invention;
Fig. 5 is the preparation technology flow chart of MEMS in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.It is, however, obvious to a person skilled in the art that the present invention can be carried out without these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
It should be appreciated that the present invention can implement in different forms, and should not be construed as being limited to embodiments presented herein.On the contrary, provide these embodiments will make openly thoroughly with complete, and will fully convey the scope of the invention to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size are likely to be exaggerated.Same reference numerals represents identical element from start to finish.
It is understood that, when element or layer be referred to as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or during layer, its can directly on other element or layer, adjacent thereto, be connected or coupled to other element or layer, or can there is element between two parties or layer.On the contrary, when element be referred to as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or during layer, then be absent from element between two parties or layer.Although it should be understood that and term first, second, third, etc. can being used to describe various element, parts, district, floor and/or part, these elements, parts, district, floor and/or part should not be limited by these terms.These terms are used merely to distinguish an element, parts, district, floor or part and another element, parts, district, floor or part.Therefore, without departing under present invention teach that, the first element discussed below, parts, district, floor or part are represented by the second element, parts, district, floor or part.
Spatial relationship term such as " ... under ", " ... below ", " following ", " ... under ", " ... on ", " above " etc., here can be used thus the relation of shown in description figure a element or feature and other element or feature for convenient description.It should be understood that except the orientation shown in figure, spatial relationship term is intended to also include the different orientation of the device in using and operating.Such as, if the device upset in accompanying drawing, then, be described as " below other element " or " under it " or " under it " element or feature will be oriented to other element or feature " on ".Therefore, exemplary term " ... below " and " ... under " upper and lower two orientations can be included.Device can additionally orientation (90-degree rotation or other orientation) and as used herein spatial description language correspondingly explained.
As used herein term only for purpose of describing specific embodiment and the restriction not as the present invention.When using at this, " one ", " one " and " described/to be somebody's turn to do " of singulative is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that term " composition " and/or " including ", when using in this specification, determine the existence of described feature, integer, step, operation, element and/or parts, but be not excluded for one or more other feature, integer, step, operation, element, the existence of parts and/or group or interpolation.When using at this, term "and/or" includes any of relevant Listed Items and all combinations.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, in order to explaination technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but except these detailed descriptions, the present invention can also have other embodiments.
Embodiment 1
In order to solve problems of the prior art, it is provided that a kind of MEMS, below in conjunction with accompanying drawing, described MEMS being described further, wherein said Fig. 1 h is the structural representation of described MEMS, and described Fig. 2 is Fig. 1 h sectional view along A-A direction.
First, reference Fig. 1 h, described MEMS, including:
Semiconductor substrate 101;
Backboard 103, is positioned at described semiconductor substrate;
Vibrating diaphragm 105, is positioned at above described backboard, including spaced first vibrating diaphragm 1051 and the second vibrating diaphragm 1052;
Sacrificial material layer 104, between described vibrating diaphragm 105 and described backboard 103;
Wherein, between described first vibrating diaphragm 1051 and described backboard 103, it is formed with cavity, the described Semiconductor substrate below described cavity is formed back of the body chamber;
Described first vibrating diaphragm is formed with the first electrode contact, described second vibrating diaphragm is formed with the second electrode contact.
MEMS of the present invention is MEMS microphone, includes two electric capacity being serially connected in described MEMS, and described backboard and described cavity below described first vibrating diaphragm, described first vibrating diaphragm form the first electric capacity;Described backboard 103 below described second vibrating diaphragm 1052, described second vibrating diaphragm and described sacrificial material layer 104 between the two form the second electric capacity with described first capacitances in series.
Described backboard 103 is integrated setting, is made up of an overall back veneer material layer, and described backboard 103 is that described MEMS microphone and described second capacitor share, respectively as an electrode in the first electric capacity and described second electric capacity.
It is arranged in the electrode that described backboard is described first electric capacity of MEMS microphone, is arranged in the electrode that described backboard is described second electric capacity of the second electric capacity.Further, in this embodiment, first vibrating diaphragm and the described second spaced setting of vibrating diaphragm, the set-up mode of described first vibrating diaphragm and described second vibrating diaphragm is not limited to a certain kind, such as described second vibrating diaphragm surrounds described first vibrating diaphragm, but except this setup, other modes can also be applied to the present invention.
Further, described first vibrating diaphragm 1051 is rounded, and described second vibrating diaphragm 1052 is in having annular jaggy, around described first vibrating diaphragm, as shown in Figure 2.
Further, described first vibrating diaphragm is provided with the first pad;Being provided with the second pad on described second vibrating diaphragm, one end or the two ends of the described breach of wherein said second vibrating diaphragm are provided with the second pad.
It is formed with cavity between described backboard and described first vibrating diaphragm 1051, described Semiconductor substrate below described cavity is formed back of the body chamber, described back of the body chamber can be exposed can not also expose described backboard, two electrodes of described backboard and described first vibrating diaphragm 1051 respectively described MEMS microphone, air in described cavity is then as dielectric layer, to form the first electric capacity.
Further, the described backboard below described first vibrating diaphragm is formed with some openings.
Accordingly, it is formed with sacrifice layer between described second vibrating diaphragm 1052 and the described backboard of lower section, described second vibrating diaphragm 1052 and described backboard are respectively as two electrodes of described second electric capacity, and described sacrifice layer is then as the dielectric medium of described second electric capacity, to form described second electric capacity.
Alternatively, insulating barrier 102 can also be formed between described backboard and described Semiconductor substrate further.
Alternatively, described insulating barrier 102 can select SiN, but is not limited to described material.
In this embodiment, described first vibrating diaphragm, the second vibrating diaphragm constitute two electric capacity connected with described backboard (backplate), Fig. 3 is the schematic diagram of this series capacitance, wherein the first vibrating diaphragm is the left electrode of C1, second vibrating diaphragm is the right electrode of C2, the left electrode of the described backboard right electrode as C1 and C2.
If the supply voltage that IC circuit provides is U, then the voltage U1=C2 being assigned on MEMS microphone electric capacity C1 × U/ (C1+C2).
In above formula, U1, U and C1 is fixing, namely the running voltage of MEMS microphone and capacitance cannot change after having designed, and U is the voltage of external power supply, in order to make the MEMS microphone of different designs can use unified external IC circuit, the supply voltage of IC circuit is also certain.
C2 can be regulated by the area of the second vibrating diaphragm and sacrifice sheet material layers, the IC circuit of identical U value can be used to drive the MEMS microphone of different U1 by regulating C2, therefore can reduce IC manufacturing cost, and be conducive to batch production.
The present invention is to solve problems of the prior art, provide a kind of new MEMS microphone, described MEMS microphone designs another electric capacity and this MEMS microphone capacitances in series, reach to regulate the voltage of distribution on MEMS microphone electric capacity by regulating the capacitance of another electric capacity, making the voltage being assigned in MEMS microphone is its running voltage, therefore it is no longer necessary to the MEMS microphone into different designs and designs different IC circuit, IC circuit can be unified to produce, reduce cost, be conducive to mass production.
Embodiment 2
In order to solve problems of the prior art, it is provided that a kind of MEMS, below in conjunction with accompanying drawing, described MEMS being described further, wherein said Fig. 4 is the structural representation of described MEMS.
First, reference Fig. 4, described MEMS, including:
Semiconductor substrate;
Vibrating diaphragm 105, is positioned at described semiconductor substrate;
Backboard 103, is positioned at above described vibrating diaphragm 105, including spaced first backboard 1031 and the second backboard 1032;
Sacrificial material layer 104, between described vibrating diaphragm 105 and described backboard 103;
Wherein, between the described vibrating diaphragm below described first backboard 1031 and described first backboard, it is formed with cavity, the described Semiconductor substrate below described cavity is formed back of the body chamber;
Described first backboard is formed with the first electrode contact, described second backboard is formed with the second electrode contact.
Wherein, described MEMS is MEMS microphone, and described vibrating diaphragm and described cavity below the first backboard, described first backboard described in described MEMS form the first electric capacity;Described vibrating diaphragm 105 below described second backboard 1032, described second backboard and described sacrificial material layer 104 between the two form the second electric capacity with described first capacitances in series.
Described vibrating diaphragm is integrated setting, is made up of an overall diaphragm materials layer, shares for described first electric capacity and described second electric capacity, respectively as an electrode in the first electric capacity in MEMS microphone and described second electric capacity.
It is positioned at the electrode that the described vibrating diaphragm below the first backboard is described first electric capacity, is arranged in the electrode that described vibrating diaphragm is described second electric capacity of the second electric capacity.Further, in this embodiment, described second backboard 1032 surround described first backboard 1031 and and described first backboard interval arrange, specifically, described vibrating diaphragm 105 is positioned at described first backboard and the lower section of described second backboard.
Wherein, described first backboard 1031 is rounded, and described second backboard 1032 is in having annular jaggy, around described first backboard.It should be understood that the set-up mode of described first backboard and described second backboard is not limited to this example.
Further, the described vibrating diaphragm below described first backboard is formed with some openings.
Further, described first backboard is provided with the first pad;On described second backboard, one end of described breach or two ends are provided with the second pad.
It is also formed with described cavity between described first backboard and described vibrating diaphragm, described Semiconductor substrate below described cavity is formed back of the body chamber, described back of the body chamber can be exposed can not also expose described vibrating diaphragm, two electrodes of described first backboard and described vibrating diaphragm respectively described first electric capacity, air in described cavity is then as dielectric layer, to form the first electric capacity.
Accordingly, being formed with sacrifice layer, described vibrating diaphragm and described second backboard two electrodes respectively as described second electric capacity between described vibrating diaphragm and described second backboard, described sacrifice layer is then as the dielectric medium of described second electric capacity, to form described second electric capacity.
Alternatively, insulating barrier 102 can also be formed between described vibrating diaphragm and described Semiconductor substrate further.
Alternatively, described insulating barrier 102 can select SiN, but is not limited to described material.
In this embodiment, described vibrating diaphragm and the first backboard and described second backboard (backplate) constitute the electric capacity of two series connection, Fig. 3 is the schematic diagram of this series capacitance, wherein the first backboard is the left electrode of C1, second backboard is the right electrode of C2, the left electrode of the described vibrating diaphragm right electrode as C1 and C2.
If the supply voltage that IC circuit provides is U, then the voltage U1=C2 being assigned on MEMS microphone electric capacity C1 × U/ (C1+C2).
In above formula, U1, U and C1 is fixing, namely the running voltage of MEMS microphone and capacitance cannot change after having designed, and U is the voltage of external power supply, in order to make the MEMS microphone of different designs can use unified external IC circuit, the supply voltage of IC circuit is also certain.
C2 can be regulated by the area of the second vibrating diaphragm and sacrifice sheet material layers, the IC circuit of identical U value can be used to drive the MEMS microphone of different U1 by regulating C2, therefore can reduce IC manufacturing cost, and be conducive to batch production.
The present invention is to solve problems of the prior art, provide a kind of new MEMS microphone, described MEMS microphone designs another electric capacity and this MEMS microphone capacitances in series, reach to regulate the voltage of distribution on MEMS microphone electric capacity by regulating the capacitance of another electric capacity, making the voltage being assigned in MEMS microphone is its running voltage, therefore it is no longer necessary to the MEMS microphone into different designs and designs different IC circuit, IC circuit can be unified to produce, reduce cost, be conducive to mass production.
Embodiment 3
The preparation method that present invention also offers a kind of described MEMS, is described further described method below in conjunction with Fig. 1 a-1h, and described 1a-1h is the preparation process schematic diagram of MEMS in this embodiment.
First, perform step 201, it is provided that Semiconductor substrate 101, described Semiconductor substrate 101 is formed insulating barrier 102 and backboard 103.
Specifically, as shown in Figure 1a, in this step, described Semiconductor substrate can be at least one in the following material being previously mentioned: stacking SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc. on stacking silicon (SSOI), insulator on silicon, silicon-on-insulator (SOI), insulator.
Described insulating barrier 102 can select SiN, but is not limited to described material.
Described backboard 103 can select polysilicon or SiGe.
Perform step 202, pattern described insulating barrier 102 and described backboard 103, to be formed with some first openings in described insulating barrier 102 and described backboard 103.
Specifically, as shown in Figure 1 b, on described backboard, the mask layer of patterning is first formed, for instance photoresist layer, then with described mask layer for insulating barrier described in mask etch 102 and described backboard 103, to be formed with some first openings in described insulating barrier 102 and described backboard 103.
Performing step 203, sacrificial material layer 104, to fill described first opening and to cover described backboard 103.
As illustrated in figure 1 c, described sacrificial material layer 104 is chosen as oxide skin(coating), for instance SiO2With the material such as carbon doped silicon oxide (SiOC), it is not limited to a certain.
Described sacrificial material layer 104 can select deposition process conventional in prior art, for instance can be through what chemical vapour deposition (CVD) (CVD) method, physical vapour deposition (PVD) (PVD) method or ald (ALD) method etc. were formed.Preferred ald (ALD) method in the present invention.
Perform step 204, described sacrificial material layer 104 formed diaphragm materials layer and patterns, to form the second opening, obtaining the first spaced vibrating diaphragm 1051 and the second vibrating diaphragm 1052.
Specifically, as shown in Figure 1 d, in this step, pattern described diaphragm materials layer, to form described second opening of annular, obtain described first vibrating diaphragm 1051 of circle and described second vibrating diaphragm 1052 of annular.
Wherein, described first vibrating diaphragm 1051 is rounded, and described second vibrating diaphragm 1052 is in having annular jaggy, around described first vibrating diaphragm, as shown in Figure 2.
The electrode of described first vibrating diaphragm 1051 and described second vibrating diaphragm 1052 respectively described MEMS microphone and described second electric capacity.
Perform step 205, described first vibrating diaphragm and described second vibrating diaphragm sequentially form passivation layer 106 and operation wafer 107.
Specifically, as shown in fig. le, in this step, described passivation layer 106 is one or more in PESIN layer, PETEOS layer, SiN layer and TEOS layer.
Described operation wafer 107 is as protective layer.
Perform step 206, described step 205 of reversing obtains element, and patterns described Semiconductor substrate, to form the 3rd opening, and remove the described sacrificial material layer above and below the described backboard below described first vibrating diaphragm 1051, to form cavity.
Specifically, as shown in Figure 1 f, double-sided etching process is selected in this step, to remove the described sacrificial material layer 104 above and below described backboard simultaneously.
Wherein, when described sacrificial material layer 104 selects oxide skin(coating), it is possible to select the wet etching of TMAH to remove described sacrificial material layer.
The mass fraction of described TMAH solution is 0.1%-10%, and described wet etching temperature is 25-90 DEG C, and described wet etch time is 10s-1000s, but be not limited to that this example, it is also possible to select additive method commonly used in the art.
Perform step 207, remove described passivation layer 106 and described operation wafer 107, expose described first vibrating diaphragm and described second vibrating diaphragm.
Specifically, as shown in Figure 1 g, first reverse described device in this step, then removes described passivation layer 106 and described operation wafer 107, and specifically minimizing technology can select method commonly used in the art, does not repeat them here.
In this step, the back of the body chamber formed below of described first vibrating diaphragm, two electrodes of described backboard and described first vibrating diaphragm 1051 respectively described MEMS microphone, the air in described cavity is then as dielectric layer, to form MEMS microphone capacitor.
Accordingly, it is formed with sacrifice layer between described second vibrating diaphragm 1052 and described backboard, described second vibrating diaphragm 1052 and described backboard are respectively as two electrodes of described second electric capacity, and described sacrifice layer is then as the dielectric medium of described second electric capacity, to form described second electric capacity.
Perform step 208, described first vibrating diaphragm and described second vibrating diaphragm form the first pad 108 and the second pad 109 respectively, for measurement, as shown in figure 1h.
So far, the introduction of correlation step prepared by the MEMS of the embodiment of the present invention is completed.After the above step, it is also possible to include other correlation step, repeat no more herein.Further, in addition to the foregoing steps, the preparation method of the present embodiment can also include other steps among each step above-mentioned or between different steps, and these steps all can be realized by various techniques of the prior art, repeats no more herein.
The present invention is to solve problems of the prior art, provide a kind of new MEMS microphone, described MEMS microphone designs another electric capacity and this MEMS microphone capacitances in series, reach to regulate the voltage of distribution on MEMS microphone electric capacity by regulating the capacitance of another electric capacity, making the voltage being assigned in MEMS microphone is its running voltage, therefore it is no longer necessary to the MEMS microphone into different designs and designs different IC circuit, IC circuit can be unified to produce, reduce cost, be conducive to mass production.
Fig. 5 is the preparation technology flow chart of MEMS described in the embodiment of the invention, specifically includes following steps:
Step S1: Semiconductor substrate is provided, is formed with backboard on the semiconductor substrate;
Step S2: sacrificial material layer, to cover described backboard;
Step S3: form diaphragm materials layer in described sacrificial material layer and pattern, to obtain the first vibrating diaphragm and second vibrating diaphragm of spaced setting;
Step S4: bonding operation wafer on described first vibrating diaphragm and described second vibrating diaphragm;
Step S5: obtain element in the described step S4 that reverses, and pattern described Semiconductor substrate, to form the back of the body chamber exposing the described backboard above described first vibrating diaphragm, removes the described sacrificial material layer between described first vibrating diaphragm and described backboard, to form cavity;
Step S6: the element obtained in inversion step S5, removes described operation wafer.
Embodiment 4
Present invention also offers the replacement implementation of a kind of embodiment 3, including:
Semiconductor substrate 101 is provided, described Semiconductor substrate 101 is formed with insulating barrier 102 and vibrating diaphragm;
Sacrificial material layer 104, to cover described vibrating diaphragm 103;
Described sacrificial material layer 104 formed backboard and patterns, to form the second opening, obtaining the first spaced backboard and the second backboard;
Described first backboard and described second backboard sequentially form passivation layer 106 and operation wafer 107;
Reverse and described step S4 obtains element, and pattern described Semiconductor substrate, to form the 3rd opening, and remove the described sacrificial material layer above and below the described vibrating diaphragm below described first backboard, to form cavity.
Wherein, pattern described backboard, to form described second opening of annular, obtain described first backboard of circle and described second backboard of annular.
Described method can also include:
Remove described passivation layer and described operation wafer, expose described first backboard and described second backboard;
Described first backboard and described second backboard form the first pad and the second pad respectively.
In this embodiment, described backboard is positioned at the top of described vibrating diaphragm, and described backboard is isolated into two parts by opening, and other parts are all referred to step described in embodiment 3, and carry out technologic adjustment according to described difference, do not repeat them here.
Embodiment 5
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 1 or 2.Wherein, semiconductor device is the MEMS described in embodiment 1 or 2, or the MEMS that the preparation method according to embodiment 3 or 4 obtains.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book, game machine, television set, VCD, DVD, navigator, photographing unit, video camera, recording pen, any electronic product such as MP3, MP4, PSP or equipment, it is possible to for any intermediate products including described MEMS.The electronic installation of the embodiment of the present invention, owing to employing above-mentioned MEMS, thus has better performance.
The present invention is illustrated already by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that and the invention is not limited in above-described embodiment, more kinds of variants and modifications can also be made according to the teachings of the present invention, within these variants and modifications all fall within present invention scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.

Claims (27)

1. a MEMS, including:
Semiconductor substrate;
Backboard, is positioned at described semiconductor substrate;
Vibrating diaphragm, is positioned at above described backboard, including spaced first vibrating diaphragm and the second vibrating diaphragm;
Sacrifice layer, between described vibrating diaphragm and described backboard;
Wherein, between described first vibrating diaphragm and described backboard, it is formed with cavity, the described Semiconductor substrate below described cavity is formed back of the body chamber;
Described first vibrating diaphragm is formed with the first electrode contact, described second vibrating diaphragm is formed with the second electrode contact.
2. MEMS according to claim 1, it is characterised in that described second vibrating diaphragm surrounds described first vibrating diaphragm.
3. MEMS according to claim 2, it is characterised in that described first vibrating diaphragm is rounded, described second vibrating diaphragm is in having annular jaggy, and described second vibrating diaphragm surrounds described first vibrating diaphragm.
4. MEMS according to claim 3, it is characterised in that be provided with the first pad on described first vibrating diaphragm;
Described second vibrating diaphragm is provided with the second pad.
5. MEMS according to claim 1, it is characterised in that described backboard and described cavity below described first vibrating diaphragm, described first vibrating diaphragm form the first electric capacity;
Described backboard below described second vibrating diaphragm, described second vibrating diaphragm and described sacrifice layer between the two form the second electric capacity.
6. MEMS according to claim 1, it is characterised in that be provided with insulating barrier between described Semiconductor substrate and described backboard.
7. MEMS according to claim 1, it is characterised in that described first vibrating diaphragm or be formed with some openings in the described backboard below described first vibrating diaphragm.
8. according to the arbitrary described MEMS of claim 1-7, it is characterised in that described MEMS is MEMS microphone.
9. a MEMS, including:
Semiconductor substrate;
Vibrating diaphragm, is positioned at described semiconductor substrate;
Backboard, is positioned at above described vibrating diaphragm, including spaced first backboard and the second backboard;
Sacrifice layer, between described vibrating diaphragm and described backboard;
Wherein, between described first backboard and the described vibrating diaphragm below described first backboard, it is formed with cavity, the described Semiconductor substrate below described cavity is formed back of the body chamber;
Described first backboard is formed with the first electrode contact, described second backboard is formed with the second electrode contact.
10. MEMS according to claim 9, it is characterised in that described second backboard surrounds described first backboard.
11. MEMS according to claim 10, it is characterised in that described first backboard is rounded, described second backboard is in having annular jaggy, and described second backboard surrounds described first backboard.
12. MEMS according to claim 11, it is characterised in that be provided with the first pad on described first backboard;
Described second backboard is provided with the second pad.
13. MEMS according to claim 9, it is characterised in that described vibrating diaphragm and described cavity below described first backboard, described first backboard form the first electric capacity;
Described vibrating diaphragm below described second backboard, described second backboard and described sacrifice layer between the two form the second electric capacity.
14. MEMS according to claim 9, it is characterised in that be provided with insulating barrier between described Semiconductor substrate and described backboard.
15. MEMS according to claim 9, it is characterised in that described first backboard or be formed with some openings in the described vibrating diaphragm below described first backboard.
16. according to the arbitrary described MEMS of claim 9-15, it is characterised in that described MEMS is MEMS microphone.
17. a preparation method for MEMS, including:
Step S1: Semiconductor substrate is provided, is formed with backboard on the semiconductor substrate;
Step S2: sacrificial material layer, to cover described backboard;
Step S3: form diaphragm materials layer in described sacrificial material layer and pattern, to obtain the first vibrating diaphragm and second vibrating diaphragm of spaced setting;
Step S4: bonding operation wafer on described first vibrating diaphragm and described second vibrating diaphragm;
Step S5: obtain element in the described step S4 that reverses, and pattern described Semiconductor substrate, to form the back of the body chamber exposing the described backboard above described first vibrating diaphragm, removes the described sacrificial material layer between described first vibrating diaphragm and described backboard, to form cavity;
Step S6: the element obtained in inversion step S5, removes described operation wafer.
18. method according to claim 17, it is characterised in that in described step S3, pattern described diaphragm materials layer, with described second vibrating diaphragm of conglobate described first vibrating diaphragm of shape and the annular around described first vibrating diaphragm.
19. method according to claim 17, it is characterised in that in described step S1, between described Semiconductor substrate and described backboard, it is also formed with insulating barrier, in described insulating barrier and described backboard, is formed with some openings.
20. method according to claim 17, it is characterised in that in described step S4, between described first vibrating diaphragm, described second vibrating diaphragm and described operation wafer, it is also formed with passivation layer.
21. method according to claim 17, it is characterised in that after described step S6, described method also includes:
Step S7: form the first pad and the second pad respectively on described first vibrating diaphragm and described second vibrating diaphragm.
22. a preparation method for MEMS, including:
Step S1: Semiconductor substrate is provided, is formed with vibrating diaphragm on the semiconductor substrate;
Step S2: sacrificial material layer, to cover described vibrating diaphragm;
Step S3: form backboard in described sacrificial material layer and pattern, to obtain the first backboard and second backboard of spaced setting;
Step S4: bonding operation wafer on described first backboard and described second backboard;
Step S5: obtain element in the described step S4 that reverses, and pattern described Semiconductor substrate, to form the back of the body chamber exposing the described vibrating diaphragm above described first backboard, remove described sacrificial material layer between described first backboard and the described vibrating diaphragm of top, to form cavity;
Step S6: the element obtained in inversion step S5, removes described operation wafer.
23. method according to claim 22, it is characterised in that in described step S1, between described Semiconductor substrate and described vibrating diaphragm, it is also formed with insulating barrier, in described vibrating diaphragm and described insulating barrier, forms some openings.
24. method according to claim 22, it is characterised in that in described step S3, pattern described backboard, with described second backboard of conglobate described first backboard of shape and the annular around described first backboard.
25. method according to claim 22, it is characterised in that after described step S6, described method also includes:
Step S7: form the first pad and the second pad respectively on described first backboard and described second backboard.
26. according to the method described in claim 25, it is characterised in that in described step S4, be also formed with passivation layer between described first backboard, described second backboard and described operation wafer.
27. an electronic installation, including the MEMS one of claim 1-16 Suo Shu.
CN201410837787.7A 2014-12-24 2014-12-24 MEMS device and preparation method thereof, and electronic device Pending CN105776124A (en)

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CN111491244A (en) * 2020-03-16 2020-08-04 歌尔微电子有限公司 MEMS microphone processing method and MEMS microphone
CN113660592A (en) * 2021-08-17 2021-11-16 杭州士兰微电子股份有限公司 MEMS device and preparation method thereof
CN115778002A (en) * 2023-01-05 2023-03-14 苏州敏芯微电子技术股份有限公司 Electronic cigarette sensing assembly, preparation method and electronic cigarette

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CN103288040A (en) * 2012-02-29 2013-09-11 英飞凌科技股份有限公司 Tunable MEMS device and method of making a tunable MEMS device
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CN101427591A (en) * 2006-02-24 2009-05-06 雅马哈株式会社 Condenser microphone
TW201127738A (en) * 2010-02-02 2011-08-16 Windtop Technology Corp Silicon capacitive microphone structure
US20110274298A1 (en) * 2010-05-04 2011-11-10 Bin Yang Mems microphone
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CN109721021A (en) * 2017-10-30 2019-05-07 中芯国际集成电路制造(上海)有限公司 A kind of MEMS device and preparation method, electronic device
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CN113660592A (en) * 2021-08-17 2021-11-16 杭州士兰微电子股份有限公司 MEMS device and preparation method thereof
CN115778002A (en) * 2023-01-05 2023-03-14 苏州敏芯微电子技术股份有限公司 Electronic cigarette sensing assembly, preparation method and electronic cigarette

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Application publication date: 20160720