CN105765701A - 半导体装置的制造方法 - Google Patents
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Abstract
在半导体晶圆(2)的中央部形成器件区域(17),在器件区域(17)的外周形成比器件区域(17)厚的环状加强部(18)。在形成器件区域(17)和环状加强部(18)后,对半导体晶圆(2)进行湿式处理。在进行湿式处理后,使半导体晶圆(2)旋转而进行干燥。半导体晶圆(2)的中心位置和环状加强部(18)的中心位置不同。
Description
技术领域
本发明涉及如下的半导体装置的制造方法,即,能够对干燥后的异物残留、和污迹的发生进行抑制。
背景技术
在制造半导体装置时,在LSI中进行通过3维安装等而实现的封装的高密度化,薄晶圆化不断发展,工艺完成时的晶圆厚度薄至25μm左右。另外,IGBT(绝缘栅极型双极晶体管)、MOSFET(MOS型场效应晶体管)等功率器件作为工业用电动机、汽车用电动机等的逆变器电路、大容量服务器的电源装置、以及不间断电源装置等的半导体开关而被广泛使用。
在上述功率半导体装置的制造中,为了改善以导通特性等为代表的通电性能,进行使半导体晶圆变薄的加工。近年来,为了在成本方面、特性方面进行改善,使用极薄晶圆工艺来制造半导体装置,该极薄晶圆工艺是指,对利用FZ(FloatingZone)法而制作的晶圆材料进行薄型化,直至达到50μm左右。
通常,在晶圆的薄型加工中,应用通过背磨、抛光而实现的研磨、以及用于将由机械研磨产生的加工畸变去除的湿式蚀刻、干式蚀刻,然后,在背面侧,通过离子注入、热处理而形成扩散层,通过溅射法等而形成电极。在上述状况下,在对晶圆的背面进行加工时,晶圆破损的发生频度变高。
因此,近年来,提出了如下加工方法,即,较厚地残留有晶圆外周部,仅将晶圆中心部加工得较薄(例如参照专利文献1)。通过使用形成了上述肋构造的带肋晶圆,从而使晶圆的翘曲大幅度缓和,利用工艺装置进行的晶圆输送变得容易。并且,在进行晶圆的处理时,能够大幅度提高晶圆的强度,减轻晶圆的破损、缺欠。另外,提出了如下方法,即,针对上述带肋晶圆,通过在磨削加工时供给由二氧化碳和纯水构成的磨削水,从而抑制磨削水带电,防止异物向磨削面附着(例如参照专利文献2)。还提出了如下方法,即,在输送带肋晶圆时,通过使肋的内周壁以倒锥形状倾斜,由此从内侧对侧壁进行支撑,从而抑制异物附着(例如参照专利文献3)。
专利文献1:日本特开2007-19379号公报
专利文献2:日本特开2012-9662号公报
专利文献3:日本特开2012-190930号公报
发明内容
在纯水中追加二氧化碳的现有技术能够抑制带电,但存在如下问题,即,在干燥后异物残留于晶圆中央部,产生污迹(stain)。另外,对于使肋的内周壁以倒锥形状倾斜的现有技术,由于不会直接接触磨削面,因此能够减少异物数量。但是,由于肋部与输送装置接触,因此存在从接触部产生异物的问题。另外,由于肋的内周壁成为倒锥形状,因此存在如下问题,即,一旦异物附着于减薄部分,则难以将异物去除。
本发明就是为了解决上述课题而提出的,其目的在于得到如下的半导体装置的制造方法,即,能够对干燥后的异物残留、和污迹的发生进行抑制。
本发明所涉及的半导体装置的制造方法的特征在于,具有如下工序,即:在半导体晶圆的中央部形成器件区域,在所述器件区域的外周形成比所述器件区域厚的环状加强部;在形成所述器件区域和所述环状加强部后,对所述半导体晶圆进行湿式处理;以及在进行所述湿式处理后,使所述半导体晶圆旋转而进行干燥,所述半导体晶圆的中心位置和所述环状加强部的中心位置不同。
发明的效果
在本发明中,由于半导体晶圆的中心位置和环状加强部的中心位置不同,因此在使半导体晶圆旋转而进行干燥时,能够将水分高效地排出。其结果,能够对干燥后的异物残留、和污迹的发生进行抑制。
附图说明
图1是本发明的实施方式1所涉及的半导体装置的制造方法的流程图。
图2是表示本发明的实施方式1所涉及的背磨装置的俯视图。
图3是表示由1个轴或2个轴的磨削台进行的磨削加工的侧视图。
图4是表示半导体晶圆和磨削磨具的位置关系的俯视图。
图5是表示带肋晶圆的俯视图。
图6是沿图5的I-II的剖视图。
图7是表示对半导体晶圆的中心位置和环状加强部的中心位置的偏差与异物数量之间的关系进行测量而得到的结果的图。
图8是表示对环状加强部的高度和异物数量之间的关系进行测量而得到的结果的图。
图9是表示本发明的实施方式2所涉及的半导体装置的制造方法的剖视图。
图10是表示本发明的实施方式3所涉及的半导体装置的制造方法的剖视图。
具体实施方式
参照附图,对本发明的实施方式所涉及的半导体装置的制造方法进行说明。对相同或者相对应的构成要素标注相同的标号,有时省略重复的说明。
实施方式1
图1是本发明的实施方式1所涉及的半导体装置的制造方法的流程图。在这里,作为半导体装置而制造纵型半导体器件。
首先,准备例如n型等的半导体晶圆(步骤S1)。然后,通过对半导体晶圆的表面(第1主面)进行离子注入,从而将p型、n型的杂质导入,形成具有pn结的晶体管。使用多晶硅等,形成栅极电极(步骤S2)。然后,在表面使用铝等金属材料形成发射极电极、和用于将栅极电极引出至外部的栅极配线(步骤S3)。
然后,在半导体晶圆的背面(第2主面),进行通过使用磨削磨具的背磨而实现的减薄加工(步骤S4)。此时,通过形成肋构造,从而使半导体晶圆的翘曲大幅度缓和,利用工艺装置进行的晶圆输送变得容易。另外,半导体晶圆的强度大幅度提高,在进行半导体晶圆的处理时能够减轻半导体晶圆的破损、缺欠。
然后,在背面通过离子注入而将杂质导入,使用扩散炉或激光器进行杂质的活性化而形成扩散层(步骤S5)。然后,在背面形成用于将电引出至外部的集电极电极、用于与电路基板进行连接的接合层(步骤S6)。具体地说,从背面侧起依次形成由铝构成的集电极电极、由镍构成的与焊料进行接合的接合层。另外,在集电极电极和接合层之间,使用用于对金属间的扩散进行抑制的钛、钒等金属材料。如果镍表面氧化,则与焊料的润湿性变差,变得不能实现可靠的接合,因此在镍表面,使用金、银等与外部的反应性低(non-reactivewithoutside)的金属作为保护膜。
最后,通过进行切割,将形成于半导体晶圆的多个半导体装置沿分割预定线进行分割。然后,实施单片化后的半导体装置的组装(步骤S7)。
图2是表示本发明的实施方式1所涉及的背磨装置的俯视图。设置于晶圆盒1的半导体晶圆2被输送机器人3输送至定位机构4。然后,例如,通过对晶圆外周位置进行测量,从而求出半导体晶圆的中心位置,以规定量与卡盘中心位置错开,使用输送臂5将半导体晶圆2移动至磨削处理台6的晶圆交接部7。然后,使磨削处理台6在纸面逆时针方向上旋转,移动至1轴磨削台8的位置处。在1轴磨削台进行规定量的磨削加工。使磨削处理台6进一步在纸面逆时针方向上旋转,移动至2轴磨削台9。在2轴磨削台,也与1轴磨削台同样地,进行规定量的磨削加工。在利用晶圆清洗机构10对半导体晶圆2进行清洗后,将半导体晶圆2收容于晶圆盒11。
图3是表示由1个轴或2个轴的磨削台所进行的磨削加工的侧视图。图4是表示半导体晶圆和磨削磨具的位置关系的俯视图。吸附台12及台罩13对应于1轴磨削台8或2轴磨削台9。使用保护带14,将半导体晶圆2粘贴于吸附台12,使半导体晶圆2在规定的方向上以例如300rpm左右的速度进行旋转。设置有磨削磨具15的磨削轮16从上方以4000rpm左右的速度缓慢地与半导体晶圆2接触,逐渐进行磨削加工。
图5是表示带肋晶圆的俯视图。图6是沿图5的I-II的剖视图。对该带肋晶圆的制造方法进行说明。首先,通过对半导体晶圆2的中央部进行磨削,从而在中央部形成器件区域17,在器件区域17的外周形成比器件区域17厚的环状加强部18(肋)。通过磨削而形成的凹部的侧壁高度成为环状加强部18的高度H。
作为本实施方式的特征,半导体晶圆2的中心位置19和环状加强部18的中心位置20不同。此外,所谓半导体晶圆2的中心位置19,是指半导体晶圆2的外周的圆的中心。所谓环状加强部18的中心位置20,是指环状加强部18的内周的圆的中心。
然后,对半导体晶圆2进行通过包含氢氟酸和硝酸的混合酸而实现的蚀刻、和通过纯水而实现的清洗等湿式处理。然后,使半导体晶圆2旋转而进行干燥。此时,将半导体晶圆2的中心位置设为旋转中心。
由于半导体晶圆2的中心位置和环状加强部18的中心位置不同,因此在使半导体晶圆2旋转而进行干燥时,能够将水分高效地排出。其结果,能够抑制干燥后的异物残留和污迹的发生。另外,通过对半导体晶圆2的中央部进行磨削,从而能够容易地形成阶差高的环状加强部18。
图7是表示对半导体晶圆的中心位置和环状加强部的中心位置的偏差与异物数量之间的关系进行测量而得到的结果的图。针对器件区域17的厚度为50μm厚、环状加强部18的高度为600μm的带肋晶圆,为了去除在磨削加工时形成的破碎层,利用包含氢氟酸和硝酸的混合酸进行了20μm的蚀刻,利用纯水进行了清洗。同样地进行了通过包含氢氟酸和硝酸的混合酸而实现的蚀刻和通过纯水而实现的清洗。然后,利用激光散射方式的异物检查装置(“トプコン”(TOPCON)公司制造的晶圆表面检查装置WM-7),对大于或等于0.13μm的异物的数量进行了测量。得知,通过将半导体晶圆的中心位置和环状加强部的中心位置的偏差量设为大于或等于20μm,从而能够有效地减少加工后的异物。因此,优选半导体晶圆2的中心位置和环状加强部18的中心位置的差异大于或等于20μm。
图8是表示对环状加强部的高度和异物数量之间的关系进行测量而得到的结果的图。针对器件区域17的厚度为50μm、半导体晶圆2的中心位置和环状加强部18的中心位置的偏差为20μm的带肋晶圆,同样地进行了通过包含氢氟酸和硝酸的混合酸而实现的蚀刻和通过纯水而实现的清洗。然后,利用异物检查装置,对大于或等于0.13μm的异物的数量进行了测量。得知,如果环状加强部18的高度超过300μm,则能够有效地降低通过混合酸而实现的蚀刻和通过纯水而实现的清洗后的异物。因此,优选将环状加强部18的高度设为大于或等于300μm。
实施方式2
图9是表示本发明的实施方式2所涉及的半导体装置的制造方法的剖视图。首先,如图9(a)所示,将保护带14粘贴于半导体晶圆2的表面。然后,利用图2所示的背磨装置进行减薄加工。即,如图9(b)所示,利用第1磨削磨具对半导体晶圆2进行磨削而形成第1凹部21。然后,如图9(c)所示,利用与第1磨削磨具相比磨粒尺寸小的第2磨削磨具,对第1凹部21内进行磨削而形成第2凹部22。由此,形成器件区域17和环状加强部18。
在本实施方式中,第1凹部21的中心位置是环状加强部18的中心位置。因此,能够使用磨粒尺寸大的第1磨削磨具高效地形成阶差高的环状加强部18。
实施方式3
图10是表示本发明的实施方式3所涉及的半导体装置的制造方法的剖视图。首先,如图10(a)所示,将保护带14粘贴于半导体晶圆2的表面。然后,利用图2所示的背磨装置进行减薄加工。即,如图10(b)所示,利用第1磨削磨具对半导体晶圆2进行磨削而形成第1凹部21。然后,如图10(c)所示,利用与第1磨削磨具相比磨粒尺寸小的第2磨削磨具,对第1凹部21内进行磨削而形成第2凹部22。由此,形成器件区域17和环状加强部18。
在本实施方式中,第2凹部22的中心位置是环状加强部18的中心位置。因此,由于使用磨粒尺寸小的第2磨削磨具形成阶差高的环状加强部18,因此能够降低由于磨削加工而导入的破碎层,能够减少晶圆加工时的由破损导致的脱落等。
标号的说明
2半导体晶圆,17器件区域,18环状加强部,21第1凹部,22第2凹部。
Claims (8)
1.一种半导体装置的制造方法,其特征在于,具有如下工序,即:
在半导体晶圆的中央部形成器件区域,在所述器件区域的外周形成比所述器件区域厚的环状加强部;
在形成所述器件区域和所述环状加强部后,对所述半导体晶圆进行湿式处理;以及
在进行所述湿式处理后,使所述半导体晶圆旋转而进行干燥,
所述半导体晶圆的中心位置和所述环状加强部的中心位置不同。
2.根据权利要求1所述的半导体装置的制造方法,其特征在于,
所述半导体晶圆的中心位置和所述环状加强部的中心位置的差异大于或等于20μm。
3.根据权利要求1或2所述的半导体装置的制造方法,其特征在于,
在使所述半导体晶圆旋转而进行干燥时,将所述半导体晶圆的中心位置设为旋转中心。
4.根据权利要求1至3中任一项所述的半导体装置的制造方法,其特征在于,
通过对所述半导体晶圆的中央部进行磨削,从而形成所述器件区域和所述环状加强部。
5.根据权利要求4所述的半导体装置的制造方法,其特征在于,
利用第1磨削磨具对所述半导体晶圆进行磨削而形成第1凹部,利用与所述第1磨削磨具相比磨粒尺寸小的第2磨削磨具对所述第1凹部内进行磨削而形成第2凹部,从而形成所述器件区域和所述环状加强部。
6.根据权利要求5所述的半导体装置的制造方法,其特征在于,
所述第1凹部的中心位置是所述环状加强部的中心位置。
7.根据权利要求5或6所述的半导体装置的制造方法,其特征在于,
所述第2凹部的中心位置是所述环状加强部的中心位置。
8.根据权利要求1至7中任一项所述的半导体装置的制造方法,其特征在于,
所述环状加强部的高度大于或等于300μm。
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