CN105700257B - Thin-film transistor array base-plate and liquid crystal display panel - Google Patents
Thin-film transistor array base-plate and liquid crystal display panel Download PDFInfo
- Publication number
- CN105700257B CN105700257B CN201410694784.2A CN201410694784A CN105700257B CN 105700257 B CN105700257 B CN 105700257B CN 201410694784 A CN201410694784 A CN 201410694784A CN 105700257 B CN105700257 B CN 105700257B
- Authority
- CN
- China
- Prior art keywords
- film transistor
- thin
- layer
- array base
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
The present invention relates to a kind of thin-film transistor array base-plate and liquid crystal display panels.Thin-film transistor array base-plate of the invention, it includes the first substrate, the grid being set in first substrate, the gate insulating layer for covering the grid and the substrate, the active layer for being set on the gate insulating layer and corresponding to above the grid, the etch stop layer on the active layer, the source electrode on the etch stop layer and drain electrode and the passivation layer for covering the thin film transistor (TFT), and the material of the etch stop layer is chromatic photoresist.Thin-film transistor array base-plate of the invention and the liquid crystal display panel with this thin-film transistor array base-plate improve the accuracy rate of color membrane substrates and array substrate contraposition, improve light transmittance.
Description
Technical field
The present invention relates to a kind of thin-film transistor array base-plate and with the liquid crystal display of this thin-film transistor array base-plate
Panel.
Background technique
Liquid crystal display device is widely used to every field, as family, public place, office field and personal electric are related
Product etc..Currently, liquid crystal display device is from the production lesser twisted-nematic in simple, low in cost but visual angle
(TwistedNematic, TN) type liquid crystal display develops to multi-dimensional electric field (Advanced Super Dimension
Switch, AD-SDS, abbreviation ADS) type liquid crystal display device, and the HADS type liquid of ロ rate is opened based on the height that ADS mode proposes
Crystal device, no Lun Na ー kind liquid crystal display device, the production エ skill of liquid crystal display panel are all that separately fabricated film is brilliant
Then body pipe array substrate and colored filter substrate again carry out thin-film transistor array base-plate and colored filter substrate pair
Position, at box (Cell).
Since thin-film transistor array base-plate and colored filter substrate are independently to make to align again to fit together
, when by thin-film transistor array base-plate and colored filter substrate contraposition fitting, colored filter substrate and film crystal
It is easy to appear contraposition deviation between pipe array substrate, and that contraposition deviation will lead to light leakage, transmitance reduces etc. is bad, so as to
The aperture opening ratio or display effect that can lead to liquid crystal display panel reduce.
Summary of the invention
To solve light leakage caused by the contraposition deviation between thin-film transistor array base-plate and colored filter substrate, thoroughly
Cross the technical problems such as rate reduction, it is necessary to provide a kind of thin-film transistor array base-plate.
Further, a kind of liquid crystal display panel with aforementioned film transistor (TFT) array substrate is provided.
A kind of thin-film transistor array base-plate comprising the first substrate, the grid being set in first substrate, covering are somebody's turn to do
The gate insulating layer of grid and the substrate, is located at the active layer for being set on the gate insulating layer and corresponding to above the grid
Etch stop layer on the active layer, the source electrode on the etch stop layer and drain electrode and the passivation for covering the thin film transistor (TFT)
Layer, the material of the etch stop layer are chromatic photoresist.
A kind of liquid crystal display panel comprising thin-film transistor array base-plate, opposite with the thin-film transistor array base-plate
The opposite substrate of setting and the liquid crystal layer being sandwiched between the thin-film transistor array base-plate and the opposite substrate, the thin film transistor (TFT)
Array substrate include the first substrate, the grid being set in first substrate, the gate insulating layer for covering the grid and the substrate,
It is set on the gate insulating layer and corresponds to active layer, the etch stop layer on the active layer, position above the grid
In the source electrode and drain electrode on the etch stop layer and the passivation layer of the thin film transistor (TFT) is covered, the material of the etch stop layer is coloured silk
Coloured light resistance.
A kind of thin-film transistor array base-plate comprising the first substrate, the multi-strip scanning line being set in first substrate
And multiple data lines, a plurality of scan line intersects with the insulation of a plurality of data line limits multiple picture element regions, the picture element region
Including thin film transistor (TFT), pixel electrode and color light resistance layer, the thin film transistor (TFT) respectively with the scan line, the data line and the picture
Plain electrode electrical connection, etch stop layer of the color light resistance layer as the thin film transistor (TFT).
Compared to the prior art, thin-film transistor array base-plate provided by the present invention and have this thin film transistor (TFT) array
The liquid crystal display panel of substrate replaces original etch stop layer with color light resistance layer, can not only save one of exposure mask budget
And processing time, and the accuracy rate of color membrane substrates and array substrate contraposition is improved, improve light transmittance.
Detailed description of the invention
Fig. 1 is the partial plan layout of thin-film transistor array base-plate provided by a better embodiment of the invention.
Fig. 2 is thin-film transistor array base-plate shown in Fig. 1 along the diagrammatic cross-section shown in II-II.
Fig. 3 is the plan view of liquid crystal display panel provided by a better embodiment of the invention.
Fig. 4 is diagrammatic cross-section of the liquid crystal display panel shown in Fig. 3 along IV-IV.
Fig. 5 is the diagrammatic cross-section for the display panel that third embodiment of the invention provides.
Fig. 6 is the diagrammatic cross-section for the display panel that four embodiment of the invention provides.
Fig. 7 is the diagrammatic cross-section for the display panel that fifth embodiment of the invention provides.
Main element symbol description
| Thin-film transistor array base-plate | 10、21、31、41、51 |
| First substrate | 11 |
| Scan line | 12、212 |
| Data line | 13、213 |
| Picture element region | 14 |
| Thin film transistor (TFT) | 141、2141、3141、4141、5141 |
| Pixel electrode | 142、2142、4142 |
| Color light resistance layer | 143、2143、3143、5143 |
| Etch stop layer | 1431 |
| Red photoresist unit | R |
| Green photoresist unit | B |
| Blue light resistance unit | G |
| Grid | 1411 |
| Gate insulating layer | 1412 |
| Active layer | 1413 |
| Source electrode | 1414 |
| Drain electrode | 1415 |
| Passivation layer | 1416 |
| First through hole | a |
| Second through-hole | b |
| Third through-hole | c |
| Liquid crystal display panel | 20、30、40、50 |
| Opposite substrate | 22、32、 |
| Liquid crystal layer | 23、33、43、53 |
| First polaroid | 24 |
| Second polaroid | 25 |
| Common electrode layer | 26、46、56 |
| Second substrate | 221 |
| Black matrix | 222、322、522 |
| Flatness layer | 223、323、340、440、523、540 |
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
It is thin film transistor (TFT) array base provided by a better embodiment of the invention please refer to Fig. 1 and Fig. 2, Fig. 1
The partial schematic plan view of plate 10, Fig. 2 are sectional view of the thin-film transistor array base-plate 10 along II-II shown in Fig. 1.The film
Transistor (TFT) array substrate 10 includes the first substrate 11 and the multi-strip scanning line 12 being set in first substrate 11 and is somebody's turn to do with a plurality of
The multiple data lines 13 of the insulation intersection of scan line 12.The a plurality of scan line 12 and the insulation intersection of a plurality of data line 13 are to limit
Picture element region 14 in multiple Minimum Areas for being located at intersection out.In present embodiment, a plurality of scan line 12 be parallel to each other and
It extends transversely, a plurality of data line 13 is parallel to each other and vertical with the multi-strip scanning line 12, which is rectangle.
In present embodiment, first substrate 11 can for light transmission (such as glass, quartz, or the like) or it is opaque (such as chip, pottery
Porcelain, or the like) rigid inorganic material, also can be the flexible organic material such as plastic cement, rubber, polyester or polycarbonate.
Each picture element region 14 includes thin film transistor (TFT) 141, pixel electrode 142 and color light resistance layer 143.The film is brilliant
Body pipe 141 is located at 13 infall of the scan line 12 and data line, and is electrically connected respectively with the scan line 12 and the data line 13.It should
Pixel electrode 142 is located in the picture element region 14 and is electrically connected with the thin film transistor (TFT) 141.The pixel electrode 142 is for matching
The electric field for closing the liquid crystal layer that public electrode generates driving liquid crystal display panel is shown with realizing.
The thin film transistor (TFT) 141 include grid 1411, cover the grid 1411 gate insulating layer 1412, be set to the grid
On pole insulating layer 1412 and it is located at the active layer 1413 of 1411 surface of grid, covers the color light resistance layer of the active layer 1413
143, the source electrode 1414 and drain electrode 1415 that are electrically connected in the color light resistance layer 143 and with the active layer 1413 and covering
The passivation layer 1416 of the thin film transistor (TFT) 141.The scan line 12 is connect with the grid 1411, the data line 13 and the source electrode 1414
Connection.
In present embodiment, which further includes an etch stop layer in the top of the active layer 1413
1431, the material of the etch stop layer 1431 is chromatic photoresist.In present embodiment, the color light resistance layer 143 and the etching hinder
Barrier 1431 is located on the same floor, and a part of the color light resistance layer 143 is in other words, each as the etch stop layer 1431
Etching of the part in the picture element region 14 color light resistance layer 143 also as the thin film transistor (TFT) 141 in the picture element region 14
Barrier layer, and to cover this thin for projection of the color light resistance layer 143 on the direction perpendicular to the thin-film transistor array base-plate 10
Film transistor 141, the pixel electrode 142, the scan line 12 and the data line 13.The color light resistance layer 143 includes red photoresist
Unit R, green photoresist unit B and blue light resistance unit G, each picture element region 14 have a kind of chromatic photoresist list of color
Member.Specifically, the chromatic photoresist unit positioned at three continuous picture element regions 14 of same a line is respectively red photoresist unit
R, green photoresist unit G and blue light resistance unit B, the chromatic photoresist unit positioned at all picture element regions 14 of same row can be with
For the chromatic photoresist unit of same color.Further, positioned at the colourama in adjacent two of the same a line picture element region 14
It is different to hinder cell colors, and the chromatic photoresist unit in two adjacent picture element regions 14 can directly connect, it is possible to have
Certain interval.In addition, since the chromatic photoresist cell colors in all picture element regions 14 for being located at same row are identical, it can
To be formed in fabrication steps with along with.
Specifically, the grid 1411 can use physical vaporous deposition (PVD), sputtering method, or the like, then be equipped with
Lithographic patterning technique collocation etching method is formed in first substrate 114；The gate insulating layer 1412 is laid in the grid
On 1411, and cover the grid 1411 and first substrate 114.Further, also with physical vaporous deposition (PVD),
Sputtering method, or the like, then the active layer 1413 is formed in the gate insulating layer with lithographic patterning technique collocation etching method
On 1412, and it is located at the surface of the grid 1411, which is metal oxide material, such as IGZO, IZO or IAZO
Deng.Further, which is set above the active layer 1413, and covers the active layer 1413 and the grid
Pole insulating layer 1412, the source electrode 1414 and the drain electrode 1415 are arranged in the color light resistance layer 143, the source electrode 1414 and the drain electrode
1415 can be used identical conductive material, such as copper metal material.In present embodiment, the scan line 12 and the grid 1411 exist
It is made in same procedure, the data line 13, the source electrode and the drain electrode 1415 are made in exposure mask processing procedure with along with.
Further, which includes the first through hole a and the second through-hole through the color light resistance layer 143
B, the source electrode 1414 and the drain electrode 1415 are electrically connected by first through hole a and the second through-hole b and the active layer 1413 respectively
It connects, which further includes the red photoresist unit R being sequentially spaced, green photoresist unit G and blue light resistance unit B.
The passivation layer 1416 includes the third through-hole c through the passivation layer 1416, and third through-hole c is correspondingly arranged in the drain electrode 1415
The position of top, the pixel electrode 142 are located on the passivation layer 1416 and pass through third through-hole c and the drain electrode 1415 electrically
Connection.In present embodiment, which can select the transparent conductive material of same material, such as tin indium oxide
(Indium tin oxide, ITO) etc..Chromatic photoresist in present embodiment, between first through hole a and second through-hole b
Layer is the etch stop layer 1431, and however, it is not limited to this, in other embodiments, can be by the chromatic photoresist of flood
Layer 143 is used as the etch stop layer 1431.
Compared with prior art, the thin-film transistor array base-plate 10 of present embodiment, is replaced thin with color light resistance layer
Etch stop layer in film transistor can not only save one of exposure mask budget, can also save processing time, and improve
The accuracy rate of color membrane substrates and array substrate contraposition, improves light transmittance.
It is the flat of liquid crystal display panel 20 provided by first embodiment of the invention please refer to Fig. 3 and Fig. 4, Fig. 3
Face figure, Fig. 4 are the diagrammatic cross-sections of liquid crystal display panel 20 shown in Fig. 3.The liquid crystal display panel 20 includes thin film transistor (TFT) battle array
Column substrate 21, opposite substrate 22 and the liquid crystal layer 23 being sandwiched between the thin-film transistor array base-plate 21 and opposite substrate 22.It should
Thin-film transistor array base-plate 21 uses Fig. 1 and thin-film transistor array base-plate shown in Fig. 2 10, and details are not described herein again, and it is tied
Structure.
The opposite substrate 22 includes the second substrate 221, the black matrix 222 that is set in second substrate 221 and flat
Layer 223.The flatness layer 223 is located between second substrate 221 and the common electrode layer 26, the black matrix 222 be set to this
Between two substrates 221 and the flatness layer 223.The black matrix 222 is criss-cross latticed in one, and the black matrix 222 is vertical
The scan line of the thin-film transistor array base-plate 21 is completely covered in the projection on the direction of the thin-film transistor array base-plate 21
212, data line 213 and thin film transistor (TFT) 2141, the black matrix 222 is for covering the scan line 212, the data line 213 and being somebody's turn to do
The thin film transistor (TFT) 2141 of thin-film transistor array base-plate 21.Meanwhile the black matrix 222 is also as the liquid crystal display panel 20
A part of colored filter collectively forms the liquid crystal display with the color light resistance layer 2143 of the thin-film transistor array base-plate 21
The colored filter of panel 20.The black matrix 222 corresponds to the red photoresist unit R of the color light resistance layer 2143, green photoresist
It is arranged between two photoresist units of arbitrary neighborhood in unit G and blue light resistance unit B.In present embodiment, second substrate
221 can for light transmission (such as glass, quartz, or the like) or it is opaque (such as chip, ceramics, or the like) rigid inorganic material
Matter also can be the flexible organic material such as plastic cement, rubber, polyester or polycarbonate.
The liquid crystal display panel 20 further includes the first polaroid 24, the second polaroid 25 and common electrode layer 26.This first
Polaroid 24 is located at the side of the thin-film transistor array base-plate 21 far from the liquid crystal layer 23.It is right that second polaroid 25 is located at this
Side to substrate 22 far from the liquid crystal layer 23.The common electrode layer 26 is set to the opposite substrate 22 close to the liquid crystal layer 23
Side.First polaroid 24 and second polaroid 25 are mainly used for making the polarised light of specific direction to pass through so that the liquid crystal
Show that panel 20 is imaged.In present embodiment, the common electrode layer 26 is as the electricity generated to drive the electric field of the liquid crystal layer 23
One of pole is generated with 2142 collective effect of pixel electrode of the thin-film transistor array base-plate 21 to drive the liquid crystal layer 23 to revolve
The electric field turned.In present embodiment, which can select the electrically conducting transparent with 242 same material of pixel electrode
Material, such as tin indium oxide (Indium tin oxide, ITO) etc., however, it is not limited to this, in other embodiments, the public affairs
Common electrode 28 can also select the transparent conductive material of other materials.
Compared with prior art, in liquid crystal display panel 20 of the present invention, thin film transistor (TFT) is replaced using color light resistance layer
In etch stop layer, can not only save one of exposure mask budget, processing time can also be saved.Color light resistance layer and picture simultaneously
Plain electrode fabrication on the same substrate, is produced on compared to color light resistance layer and pixel electrode and is easier to align on different substrate,
And then can improve colored filter substrate in the prior art and thin-film transistor array base-plate contraposition when there are the technologies such as deviation
Problem improves aperture opening ratio.
Although having carried out detailed description to the present invention above, not invention is limited.As shown in Figure 5
Embodiment, wherein Fig. 5 is the schematic diagram of the section structure of the liquid crystal display panel of second embodiment of the invention.Present embodiment
Liquid crystal display panel 30 and the main distinction of the liquid crystal display panel 20 of first embodiment of the invention are: the LCD display
The black matrix 322 and flatness layer 323 of plate 30 are set on thin-film transistor array base-plate 31, which is located at the film
The side of transistor (TFT) array substrate 31 and the close liquid crystal layer 33, the black matrix 322 are located at the flatness layer 323 and the film crystal
Between pipe array substrate 31, the color light resistance layer 3143 of the black matrix 322 and the thin-film transistor array base-plate 31 jointly as
The colored filter of the liquid crystal display panel 30.In addition, the thin film transistor (TFT) 3141 of the thin-film transistor array base-plate 31 with should
Also there is a flatness layer 340 between black matrix 322, with and planarize the thin-film transistor array base-plate 31, be convenient for the black matrix
322 formation.
Embodiment as shown in FIG. 6, the liquid crystal display panel 40 of present embodiment and the liquid of first embodiment of the invention
The main distinction of LCD panel 20 is: the common electrode layer 46 of the liquid crystal display panel 40 is set to thin film transistor (TFT) array
On substrate 41, and it is located at the thin-film transistor array base-plate 41 close to the side of liquid crystal layer 43.In addition, the thin film transistor (TFT) array
Also there is a flatness layer 440, so that the common electrode layer between the thin film transistor (TFT) 4141 of substrate 41 and the common electrode layer 46
46 is insulated from each other with the pixel electrode 4142 of the thin-film transistor array base-plate 41, and planarizes the thin-film transistor array base-plate
41。
Implementation column as shown in Figure 7, the liquid crystal display panel 50 of present embodiment and the liquid of first embodiment of the invention
The main distinction of LCD panel 20 is: common electrode layer 56, black matrix 522 and the flatness layer 523 of the display panel 50 are set
It is placed on thin-film transistor array base-plate 51, which is located at the thin-film transistor array base-plate 51 close to liquid crystal layer
53 side, the flatness layer 523 are located between the thin-film transistor array base-plate 51 and the common electrode layer 56, the black matrix
522 between the flatness layer 523 and the thin-film transistor array base-plate 51, the black matrix 522 and the thin film transistor (TFT) array
The color light resistance layer 5143 of substrate 51 is jointly as the colored filter of the liquid crystal display panel 50.In addition, the thin film transistor (TFT)
Also there is a flatness layer 540 between the thin film transistor (TFT) 5141 of array substrate 51 and the common electrode layer 56, it is thin to planarize this
Film transistor array substrate 51, convenient for the attaching of the black matrix 522.
For another example, in other change embodiments, which can also be made on the thin-film transistor array base-plate, and
It is made in same layer with color light resistance layer, jointly as the colored filter of liquid crystal display panel.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferred embodiment to this hair
It is bright to be described in detail, those skilled in the art should understand that, it can modify to technical solution of the present invention
Or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. a kind of thin-film transistor array base-plate is applied in liquid crystal display panel；It includes the first substrate, thin film transistor (TFT),
The thin film transistor (TFT) includes the grid being set in first substrate, the gate insulating layer for covering the grid and the substrate, setting
In on the gate insulating layer and correspond to the grid above active layer, the etch stop layer on the active layer, be located at should
Source electrode and drain electrode on etch stop layer and the passivation layer for covering the thin film transistor (TFT), which is characterized in that the etch stop layer
Material is chromatic photoresist；
The thin-film transistor array base-plate includes color light resistance layer, which is located on the same floor with the etch stop layer,
A part of the color light resistance layer is as the etch stop layer.
2. thin-film transistor array base-plate as described in claim 1, which is characterized in that the color light resistance layer includes red photoresist
Unit, green photoresist unit and blue light resistance unit, positioned at same a line three continuous chromatic photoresist units color not
Together.
3. thin-film transistor array base-plate as claimed in claim 2, which is characterized in that the adjacent direct phase of chromatic photoresist unit
It connects.
4. a kind of liquid crystal display panel comprising thin-film transistor array base-plate opposite with the thin-film transistor array base-plate is set
The opposite substrate set and the liquid crystal layer being sandwiched between the thin-film transistor array base-plate and the opposite substrate, the thin film transistor (TFT) battle array
Column substrate uses claim 1-3 described in any item thin-film transistor array base-plates.
5. liquid crystal display panel as claimed in claim 4, which is characterized in that the liquid crystal display panel includes black matrix, this is black
For matrix in dark brown staggered latticed, projection of the black matrix on the direction perpendicular to the thin-film transistor array base-plate is complete
Cover scan line, data line and the thin film transistor (TFT) of the thin-film transistor array base-plate.
6. liquid crystal display panel as claimed in claim 5, which is characterized in that the black matrix is located at the opposite substrate close to the liquid
The side of crystal layer, and the black matrix corresponds to the red photoresist unit, green of the color light resistance layer of the thin-film transistor array base-plate
It is arranged between two photoresist units of arbitrary neighborhood in coloured light resistance unit and blue light resistance unit.
7. liquid crystal display panel as claimed in claim 5, which is characterized in that the black matrix is located at the thin film transistor (TFT) array base
Plate is close to the side of the liquid crystal layer, and the black matrix corresponds to the red light of the color light resistance layer of the thin-film transistor array base-plate
It is arranged between two photoresist units of arbitrary neighborhood in resistance unit, green photoresist unit and blue light resistance unit.
8. a kind of thin-film transistor array base-plate is applied in liquid crystal display panel；It include the first substrate, be set to this first
Multi-strip scanning line and multiple data lines in substrate, a plurality of scan line intersects with the insulation of a plurality of data line limits multiple pictures
Plain region, the picture element region include thin film transistor (TFT), pixel electrode and color light resistance layer, the thin film transistor (TFT) respectively with the scanning
Line, the data line and pixel electrode electrical connection, the thin film transistor (TFT) include the grid being set in first substrate, cover and be somebody's turn to do
The gate insulating layer of grid and the substrate, is located at the active layer for being set on the gate insulating layer and corresponding to above the grid
Etch stop layer on the active layer, the source electrode on the etch stop layer and drain electrode and the passivation for covering the thin film transistor (TFT)
Layer, which is characterized in that the material of the etch stop layer is chromatic photoresist, and at least partly the color light resistance layer is as the film crystal
The etch stop layer of pipe.
9. thin-film transistor array base-plate as claimed in claim 8, which is characterized in that the color light resistance layer is thin perpendicular to this
Projection on the direction of film transistor array substrate covers the thin film transistor (TFT), the pixel electrode, the scan line and the data line.
10. thin-film transistor array base-plate as claimed in claim 8, which is characterized in that the color light resistance layer includes red light
Hinder unit, green photoresist unit and blue light resistance unit, positioned at same a line three continuous chromatic photoresist units color not
Together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410694784.2A CN105700257B (en) | 2014-11-27 | 2014-11-27 | Thin-film transistor array base-plate and liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410694784.2A CN105700257B (en) | 2014-11-27 | 2014-11-27 | Thin-film transistor array base-plate and liquid crystal display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105700257A CN105700257A (en) | 2016-06-22 |
| CN105700257B true CN105700257B (en) | 2019-09-13 |
Family
ID=56294454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410694784.2A Active CN105700257B (en) | 2014-11-27 | 2014-11-27 | Thin-film transistor array base-plate and liquid crystal display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105700257B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101350358A (en) * | 2007-07-17 | 2009-01-21 | 台湾积体电路制造股份有限公司 | Semiconductor device and image sensing device |
| CN101995690A (en) * | 2009-08-31 | 2011-03-30 | 奇美电子股份有限公司 | Liquid crystal panel and liquid crystal display |
| CN102388413A (en) * | 2009-03-23 | 2012-03-21 | 夏普株式会社 | Active element substrate and manufacturing method thereof, and display apparatus using active element substrate manufactured by this manufacturing method |
| CN103427023A (en) * | 2012-05-24 | 2013-12-04 | 乐金显示有限公司 | Oxide thin film transistor, method for fabricating TFT, display device having TFT, and method for fabricating the same |
| CN103943626A (en) * | 2013-02-04 | 2014-07-23 | 上海天马微电子有限公司 | TFT array substrate, display panel and display device |
| CN103972244A (en) * | 2014-03-19 | 2014-08-06 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0667197A (en) * | 1992-08-18 | 1994-03-11 | Sanyo Electric Co Ltd | Liquid crystal display device and its manufacture |
-
2014
- 2014-11-27 CN CN201410694784.2A patent/CN105700257B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101350358A (en) * | 2007-07-17 | 2009-01-21 | 台湾积体电路制造股份有限公司 | Semiconductor device and image sensing device |
| CN102388413A (en) * | 2009-03-23 | 2012-03-21 | 夏普株式会社 | Active element substrate and manufacturing method thereof, and display apparatus using active element substrate manufactured by this manufacturing method |
| CN101995690A (en) * | 2009-08-31 | 2011-03-30 | 奇美电子股份有限公司 | Liquid crystal panel and liquid crystal display |
| CN103427023A (en) * | 2012-05-24 | 2013-12-04 | 乐金显示有限公司 | Oxide thin film transistor, method for fabricating TFT, display device having TFT, and method for fabricating the same |
| CN103943626A (en) * | 2013-02-04 | 2014-07-23 | 上海天马微电子有限公司 | TFT array substrate, display panel and display device |
| CN103972244A (en) * | 2014-03-19 | 2014-08-06 | 友达光电股份有限公司 | Display panel and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105700257A (en) | 2016-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9466617B2 (en) | Display panel and method of manufacturing the same | |
| WO2016106842A1 (en) | Thin-film transistor array substrate, liquid crystal panel and liquid crystal display | |
| US9853060B2 (en) | Thin film transistor substrate and method of manufacturing the same | |
| CN105425480A (en) | View angle switchable liquid crystal display device and view angle switching method thereof | |
| KR20080026404A (en) | Array substrat, display panel having the same and fabricating of display panel | |
| US10353251B2 (en) | Display panel and manufacturing method thereof | |
| CN102929058B (en) | Array substrate, manufacturing method of array substrate, and display device | |
| WO2013139192A1 (en) | Touch liquid crystal display device, liquid crystal display panel and upper substrate | |
| CN104035250B (en) | Active component array substrate | |
| KR101980774B1 (en) | Thin film transistor substrate having color filter and method of fabricating the same | |
| CN106200090A (en) | Display floater and manufacture method thereof | |
| CN107479277A (en) | Display device and its display substrate | |
| CN103824865A (en) | Array substrate, preparation method thereof and display device | |
| US20120287363A1 (en) | Liquid crystal display device, color-filter substrate, thin-film-transistor substrate and manufacturing method thereof | |
| CN103913883A (en) | Liquid crystal display panel and thin film transistor substrate | |
| CN104570525B (en) | Liquid crystal disply device and its preparation method | |
| CN103901686A (en) | Array substrate for fringe field switching mode liquid crystal display device and method for fabricating the same | |
| TWI578502B (en) | Thin film transistor array substrate and the liquid crystal display panel | |
| KR20160043575A (en) | Liquid crystal display and manufacturing method thereof | |
| CN108319065A (en) | Liquid crystal display panel | |
| CN106066551A (en) | A kind of array base palte and display device | |
| EP3690927B1 (en) | Manufacturing method of tft array substrate and structure of tft array substrate | |
| TW569075B (en) | Active matrix substrate and manufacturing method thereof | |
| US10788719B2 (en) | Liquid crystal display device | |
| KR20160025669A (en) | Display Substrate and Method for Preparing the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161123 Address after: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Applicant after: Hongfujin Precise Industry (Shenzhen) Co., Ltd. Applicant after: Hon Hai Precision Industry Co., Ltd. Address before: Taiwan Hsinchu County Chinese jhubei City, Taiwan 1 yuan a Street No. 7 Building 1 Applicant before: YEXIN TECHNOLOGY CONSULATION CO., LTD. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |